CN116669514A - Perovskite solar cell module preparation method and system - Google Patents
Perovskite solar cell module preparation method and system Download PDFInfo
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- CN116669514A CN116669514A CN202210865195.0A CN202210865195A CN116669514A CN 116669514 A CN116669514 A CN 116669514A CN 202210865195 A CN202210865195 A CN 202210865195A CN 116669514 A CN116669514 A CN 116669514A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000006073 displacement reaction Methods 0.000 claims abstract description 4
- 210000004027 cell Anatomy 0.000 claims description 21
- 238000010926 purge Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 239000012634 fragment Substances 0.000 claims description 4
- 210000003850 cellular structure Anatomy 0.000 claims description 3
- 238000010410 dusting Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 239000011149 active material Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000013072 incoming material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The application discloses a preparation method and a system of a perovskite solar cell module, which relate to the technical field of perovskite solar cell module preparation, wherein P2 laser scribing specifically comprises the following steps: the laser beam emitted by the picosecond, nanosecond or continuous laser irradiates the interface between the front electrode layer and the intermediate layer in the selected area, the temperature at the interface is increased, and based on the difference of the absorptivity and the thermal expansion coefficient of the front electrode layer and the intermediate layer contacted with the front electrode layer, the front electrode layer and the intermediate layer contacted with the front electrode layer generate relative displacement due to the difference of deformation, so that the intermediate layer in the selected area is desorbed and peeled off, and the P2 laser scribing is realized. The process of the application ensures that fewer residues exist at the bottom of the peeled scribing line, the boundary is clearer, and the contact resistance of the front electrode and the rear electrode in the subsequent process is reduced.
Description
Technical Field
The application relates to the technical field of perovskite solar cell photoelectric component preparation, in particular to a perovskite solar cell component preparation method and system.
Background
The current perovskite cell structures are broadly divided into two types: one is a conventional structure, which comprises a substrate, a front electrode layer, an electron transport layer, a perovskite layer, a hole transport layer and a rear electrode layer from bottom to top; the other perovskite battery with a special carbon electrode structure comprises a substrate, a front electrode layer, an electron transmission layer, an isolation layer and a carbon electrode layer from bottom to top, and then a perovskite active material is absorbed.
Regardless of the structure of the perovskite cell, the laser scribing process is generally accomplished in 3 steps when producing large area cell substrates. As shown in fig. 1, the front electrode layer 2 in the selected area S1 is etched away by using laser LA1 on the substrate 1 with the front electrode layer 2, so that the front electrode layer is divided into independent electrodes, which is called P1 laser scribing; coating an intermediate layer 3 (a multilayer film consisting of an electron transport layer, a perovskite layer and a hole transport layer or a multilayer film consisting of an electron transport layer and an isolation layer) on the electrode marked with the P1 line, etching the intermediate layer 3 in the selected area S2 by using laser LA2, and dividing the intermediate layer into areas on the basis of not damaging the front electrode layer, namely P2 laser scribing; then, the back electrode layer 4 (or carbon electrode layer) is coated, and the intermediate layer 3 and the back electrode layer 4 (or carbon electrode layer) in the selected area S3 are etched away by using the laser LA3, which is called P3 laser scribing.
In the existing P2 laser scribing, the film layer to be scribed by laser is an intermediate layer, and the laser cannot damage the front electrode of the lower layer. At present, perovskite batteries are generally carried out based on a laser ablation mechanism when laser scribing is carried out, and a laser selected based on the mechanism is generally low in stability and high in price, and the scribing in an ablation mode also has residues, so that the battery efficiency is affected.
Disclosure of Invention
The application mainly aims at: the perovskite solar cell module manufacturing method and system have the advantages that the residual quantity at the bottom of the stripped scribing line is less, the boundary is clearer, and the contact resistance of front and rear electrodes in the subsequent process is reduced.
On one hand, the technical scheme adopted by the application is as follows: a method for preparing perovskite solar cell component sequentially comprises P1 laser scribing, depositing an intermediate layer, P2 laser scribing, depositing an upper electrode and P3 laser scribing,
the P2 laser scribing specifically comprises the following steps:
a picosecond, nanosecond or continuous laser is adopted to emit laser beams to irradiate on the interface between the front electrode layer and the intermediate layer in the selected area, the temperature at the interface is increased, and based on the difference of the absorptivity and the thermal expansion coefficient of the front electrode layer and the intermediate layer contacted with the front electrode layer, the front electrode layer and the intermediate layer contacted with the front electrode layer generate relative displacement due to the difference of deformation, so that the intermediate layer in the selected area is desorbed and stripped, and P2 laser scribing is realized;
wherein the wavelength range of the laser is 1000-2000 nm.
According to the above scheme, the P2 laser scribing further comprises a purging step:
after the middle layer in the selected area is desorbed and peeled, the peeled film layer is purged.
According to the scheme, the purging step specifically comprises the following steps: using an air knife with a certain included angle with the front electrode layer to move along the scribing direction; wherein the included angle between the air knife and the front electrode layer is between 10 and 90 degrees, and the running speed of the air knife relative to the front electrode layer is less than 2m/s.
According to the scheme, the P2 laser scribing further comprises a dust extraction step:
in the process of P2 laser scribing, the peeled film fragments are sucked, so that residues on the surface of the film are avoided.
According to the scheme, the energy density of the laser is in the range of 0.3-4J/cm 2 。
According to the scheme, when the adopted laser is a picosecond laser or a nanosecond laser, the pulse width of the laser is larger than 1ps.
According to the scheme, the focal depth of the laser beam is larger than the thickness of the intermediate layer, so that laser energy can penetrate through the intermediate layer to act on the interface between the front electrode layer and the intermediate layer.
According to the above scheme, in the P2 laser scribing, when the laser beam irradiates on the interface between the front electrode layer and the intermediate layer in the selected area, the adopted processing mode is galvanometer splicing, specifically:
and controlling the laser beam to move and scribe lines by using the vibrating mirror, and performing splicing processing on the P2 laser scribe line area according to the processing width of the vibrating mirror.
According to the above scheme, in the P2 laser scribing, when the laser beam irradiates on the interface between the front electrode layer and the intermediate layer in the selected area, the adopted processing mode is a multi-path laser parallel method, specifically:
the multiple lasers work simultaneously, each laser is provided with a focusing mirror, and light spots formed by laser beams emitted by each laser after passing through the corresponding focusing mirrors are mutually independent.
In another aspect, a preparation system for a preparation method of the perovskite solar cell photovoltaic module is provided, the preparation system comprising a laser processing device, the laser processing device comprising the laser.
The application has the beneficial effects that:
1) Based on the principle of laser stripping, the laser beam is emitted by a picosecond, nanosecond or continuous laser (the wavelength range is 1000-2000 nm) to irradiate the interface between the front electrode layer and the intermediate layer in the selected area, and the front electrode layer and the intermediate layer contacted with the front electrode layer are relatively displaced due to different deformation amounts, so that the intermediate layer in the selected area is desorbed and stripped, the bottom of a scribing line stripped by the method has fewer residues, the boundary is clearer, the contact resistance of the front electrode and the rear electrode in the subsequent process is reduced, and the battery efficiency is improved. Meanwhile, the laser with the wavelength in the range of 1000-2000 nm is selected, so that the cost of the laser is reduced, and the stability is improved.
2) By adding the blowing step, the film layer at the rest part which does not fly out from the position of the scribing line after stripping is further cleaned, so that the thorough scribing effect is ensured.
3) When the laser stripping process is adopted, the stripping effect can be realized by adopting a processing mode of galvanometer splicing or a method of parallelly focusing optical paths by a plurality of lasers.
Drawings
The application will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a laser scribing flow chart of a conventional process.
FIG. 2 is a graph of the absorptivity and difference for P1, P2 incoming materials for different wavelengths of light.
Fig. 3 is a schematic comparison of laser scribing, wherein (a) is laser ablation and (b) is laser lift-off.
Fig. 4 is a flow chart of laser scribing in accordance with an embodiment of the present application.
Fig. 5 is a graph of a comparison of the surface of a material after P2 laser scribing treatment according to the present application, wherein (a) is the surface of the material after infrared nanosecond laser treatment and (b) is the surface of the material after purging.
Fig. 6 is a schematic diagram of a purge step.
Fig. 7 is a drawing showing the scribing effect of the conventional process P2.
In the figure: 1-substrate, 2-front electrode layer, 3-intermediate layer, 3-1-peeling intermediate layer, 4-rear electrode layer, 5-air knife.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The application relates to a preparation method of a perovskite solar cell module, which sequentially comprises P1 laser scribing, intermediate layer deposition, P2 laser scribing, upper electrode deposition and P3 laser scribing, and the application improves the P2 laser scribing and specifically comprises the following steps: a picosecond, nanosecond or continuous laser is adopted to emit laser beams to irradiate on the interface between the front electrode layer and the intermediate layer in the selected area, the temperature at the interface is increased, and based on the difference of the absorptivity and the thermal expansion coefficient of the front electrode layer and the intermediate layer contacted with the front electrode layer, the front electrode layer and the intermediate layer contacted with the front electrode layer generate relative displacement due to the difference of deformation, so that the intermediate layer in the selected area is desorbed and peeled off, and P2 laser scribing is realized; wherein the wavelength range of the laser is 1000-2000 nm. The selected region is a region where the P2 laser scribing is to be performed.
As another example, the depth of focus of the laser beam is greater than the thickness of the intermediate layer such that laser energy is able to penetrate the intermediate layer to act on the interface between the front electrode layer and the intermediate layer. The energy density of the laser is in the range of 0.3-4J/cm 2 . When the adopted laser is a picosecond laser or a nanosecond laser, the pulse width of the laser is more than 1ps.
The stripping principle of the application is as follows: the laser with the wavelength of 1000-2000 nm can be used for intensively acting between the front electrode layer and the intermediate layer (such as an electron transmission layer) contacted with the front electrode layer. The electron transport layer is an oxide with less absorption to the laser in the wave band of 1000-2000 nm, the absorption of the intermediate layer of the P2 laser line to light is reduced along with the increase of the wavelength in the range of 1000-2000 nm (this conclusion can also be seen by combining with fig. 2, when the absorption of P2 is increased in the range of 1000-2000 nm, the absorption of the intermediate layer of the P2 line can be reduced if the difference between the absorption of P1 and the absorption of P2 is not obviously changed after the addition of the P2 material, and the absorption of the front electrode layer is increased, and the absorption of the front electrode layer is always higher than the absorption of the electron transport layer. Therefore, when the laser with the wavelength of 1000-2000 nm is used for irradiation, the temperature near the interface is increased, and the thermal expansion coefficients of the two materials are different to a certain extent, and the deformation amounts are different at the same temperature, so that the two film layers are relatively displaced and desorbed, as shown in fig. 3 (b). In order to ensure the stripping effect, the focal depth of the laser is larger than the thickness of the stripping film layer, and laser energy can penetrate the surface to act on a needed interface. Meanwhile, the pulse width of the laser needs to be larger than 1ps, the propagation depth of laser energy is reduced along with the increase of the pulse width, and when the pulse width of the laser is selected to be too small, the laser energy mainly acts on the surface of the film and can not heat the needed interface of the film, so that the stripping effect can not be realized. The laser energy density is preferably 0.3 to 4J/cm 2 In the range, after the energy is too low, the stripping effect is not easy to realize; too high an energy may damage the front electrode.
The stripping principle of the application is different from the ablation principle of the traditional process, and the laser ablation principle of the traditional process is shown in fig. 3 (a), and the processing film layer is melted and vaporized by laser heat.
Since not all of the peeled film layer flies out of the scribe line position although the intermediate layer is peeled off after the P2 laser scribe, the P2 laser scribe may preferably further include a purge step: after the middle layer in the selected area is desorbed and stripped, the stripped film layer is purged to ensure that the stripped film layer can be completely separated from the front electrode layer, as shown in fig. 6, an air knife 5 is used to form a certain included angle with the substrate and the front electrode layer 2 attached on the substrate along the scribing direction, so that the residual middle layer 3 is purged, the included angle between the air knife and the front electrode layer 2 is between 10 and 90 degrees, and the running speed of the air knife 5 relative to the front electrode layer 2 is less than 2m/s. The blowing mode has good effect.
Further, the P2 laser scribing further comprises a dust extraction step: and sucking the peeled film fragments during laser processing, namely during the P2 laser scribing process, so as to avoid residues on the surface of the film.
As another embodiment, in the P2 laser scribing, when the laser beam irradiates on the interface between the front electrode layer and the intermediate layer in the selected area, the machining mode may be galvanometer splicing, specifically: and (3) utilizing the vibrating mirror to control the laser beam to move and scribe lines, and carrying out splicing processing on the P2 laser scribing area according to the processing breadth of the vibrating mirror, namely dividing the P2 laser scribing area into a plurality of processing areas according to the processing breadth of the vibrating mirror, and controlling the laser beam to scribe each area one by the vibrating mirror, thereby completing the splicing processing of the vibrating mirror.
As another embodiment, in the P2 laser scribing, when the laser beam irradiates the interface between the front electrode layer and the intermediate layer in the selected area, the processing mode may be a parallel method of multiple lasers, specifically: the multiple lasers work simultaneously to carry out multiple scribing lines, each laser is provided with a focusing mirror, and laser emitted by each laser is mutually independent through light spots formed after the corresponding focusing mirrors. The number of optical parts can be reduced by adopting the parallel of the multipath lasers, and the laser optical path can be greatly reduced, so that the requirements on mechanical precision and stability are greatly reduced, and the maintenance and debugging difficulty is greatly reduced.
When the perovskite solar cell is used for a carbon electrode structure, the intermediate layer comprises an electron transmission layer and an isolation layer; the intermediate layer in contact with the front electrode layer is an electron transport layer; the upper electrode is a carbon electrode; after the P3 process, perovskite active material is imbibed on the scribed cell.
When the perovskite solar cell is used for a perovskite solar cell with a common structure, the intermediate layer comprises an electron transport layer, a perovskite layer and a hole transport layer; the intermediate layer in contact with the front electrode layer is an electron transport layer.
The application also provides a preparation system for the preparation method of the perovskite solar cell photoelectric component, which comprises laser processing equipment, wherein the laser processing equipment comprises the laser. The laser processing equipment is provided with corresponding optical equipment according to a laser processing mode, and is provided with corresponding optical elements such as a reflecting mirror, a beam expander, a shaping mirror, a vibrating mirror, a field lens and the like if the corresponding optical equipment is spliced by the vibrating mirror; if the multiple lasers are parallel, a plurality of lasers and corresponding focusing mirrors are provided.
The preparation system can be correspondingly provided with a purging device and a dust extraction device according to the purging step and the dust extraction step.
As shown in fig. 4, a perovskite battery of conventional structure may be used in a similar manner, as will be described in detail below with reference to a carbon electrode perovskite battery.
S1, P1 laser scribing: a transparent conductive substrate 1 with one side of FTO or ITO was prepared as a front electrode layer 2 of a perovskite solar cell, and the front electrode layer 2 in a selected region was divided into individual electrodes using an infrared laser LA 1.
S2, depositing an intermediate layer 3: tiO is sprayed on the front electrode layer 2 2 After cooling the active material to form compact TiO 2 Layer in dense TiO 2 By coating a layer of TiO 2 Mesoporous TiO is formed by slurry 2 The above two layers can be used as electron transport layer, snO 2 Material substitution; in mesoporous TiO 2 Coating a layer of ZrO 2 Mesoporous ZrO is formed by the slurry 2 And the layer is used as an isolation layer to avoid the short circuit of the anode and the cathode of the battery. The electron transport layer and the separation layer together form an intermediate layer 3.
S3, P2 laser scribing: the intermediate layer 3 in the selected region is laser scribed using an infrared laser LA2 without damaging the front electrode layer 2.
Specifically, the laser LA2 of the P2 process can be picosecond, nanosecond and continuous laser with the wavelength of 1000-2000 nm and the laser energy density range of 0.3-4J/cm 2 The laser acts on the interface between the front electrode layer and the electron transport layer to expand and peel off the interface. Wherein the isolation layer is oxide with less infrared absorption, and TiO is arranged in the wavelength range of 1000-2000 nm along with the increase of the wavelength 2 Reduced light absorption, increased light absorption by FTO, and higher FTO absorption than TiO 2 Absorbance. So when using infrared laser to irradiate, the main functions are FTO and TiO 2 At the interface, the temperature near the interface is increased, and the thermal expansion coefficients of the two materials have certain difference, and the deformation amounts are different at the same temperature, so that the two film layers are relatively displaced and desorbed and peeled.
The pulse width of the laser is larger than 1ps, and the laser processing mode can be selected from a galvanometer splicing method or a multipath laser parallel method. Further, a dust extraction device is added during laser processing, so that peeled film fragments enter a dust extraction system, and residues on the surface of the film are avoided.
And after the P2 laser scribing treatment, the stripped film layer is purged by using a purging device.
S4, depositing an upper electrode: on the raw material on which the P2 laser scribing is completed, the coating of the rear electrode layer 4 (i.e., the carbon electrode) is completed using a screen printing or active material coating manner.
S5, P3 laser scribing: the intermediate layer 3 and the rear electrode layer 4 in the selected area are etched by using the infrared laser LA3 to form an independent battery, and the front electrode layer 2 below the etched area cannot be damaged.
S6, soaking perovskite active materials: and (3) soaking perovskite active materials in the well-marked battery pieces, standing and drying at 50 ℃ to finish the manufacture of the perovskite solar cell.
Fig. 7 is a graph showing the effect of scribing in the conventional process, and fig. 5 is a graph showing the comparison of the surface of the material after the P2 laser scribing treatment according to the present application, wherein (a) is the surface of the material after the infrared nanosecond laser treatment, and (b) is the surface of the material after the purging. As can be seen from the comparison between fig. 7 and fig. 5, the laser stripping method of the present application is used for scribing P2, so that less residue is generated at the bottom of the scribing line, and the stripping and purging methods are used for removing the residue, so that the effect is better.
According to the application, the P2 laser scribing process is greatly simplified on the premise of not affecting the final effect of the battery. According to the application, an infrared laser with the wave band of 1000-2000 nm, which is greatly reduced in cost and high in stability, is adopted, and the residue at the bottom of the score line generated based on a laser stripping mechanism is less, so that the contact area between the rear electrode and the front electrode is prevented from being reduced in the subsequent electrode coating process, and no extra resistor is introduced, thereby improving the battery efficiency.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
Claims (10)
1. A preparation method of a perovskite solar cell component sequentially comprises P1 laser scribing, intermediate layer deposition, P2 laser scribing, upper electrode deposition and P3 laser scribing, and is characterized in that,
the P2 laser scribing specifically comprises the following steps:
a picosecond, nanosecond or continuous laser is adopted to emit laser beams to irradiate on the interface between the front electrode layer and the intermediate layer in the selected area, the temperature at the interface is increased, and based on the difference of the absorptivity and the thermal expansion coefficient of the front electrode layer and the intermediate layer contacted with the front electrode layer, the front electrode layer and the intermediate layer contacted with the front electrode layer generate relative displacement due to the difference of deformation, so that the intermediate layer in the selected area is desorbed and stripped, and P2 laser scribing is realized;
wherein the wavelength range of the laser is 1000-2000 nm.
2. The method of fabricating a perovskite solar cell module according to claim 1, wherein the P2 laser scribing further comprises a purging step:
after the middle layer in the selected area is desorbed and peeled, the peeled film layer is purged.
3. The method of claim 2, wherein the purging step comprises: using an air knife with a certain included angle with the front electrode layer to move along the scribing direction; wherein the included angle between the air knife and the front electrode layer is between 10 and 90 degrees, and the running speed of the air knife relative to the front electrode layer is less than 2m/s.
4. A method of fabricating a perovskite solar cell module according to any one of claims 1 to 3, wherein the P2 laser scribing further comprises a dusting step:
in the process of P2 laser scribing, the peeled film fragments are sucked, so that residues on the surface of the film are avoided.
5. The method for manufacturing a perovskite solar cell module according to claim 1, wherein the energy density of the laser is in the range of 0.3-4J/cm 2 。
6. The method of claim 1, wherein the pulse width of the laser is greater than 1ps when the laser is a picosecond laser or a nanosecond laser.
7. The method of claim 1, wherein the laser beam has a depth of focus greater than the thickness of the intermediate layer such that laser energy is able to penetrate the intermediate layer to the interface between the front electrode layer and the intermediate layer.
8. The method for manufacturing a perovskite solar cell module according to claim 1, wherein in the P2 laser scribing, when the laser beam irradiates the interface between the front electrode layer and the intermediate layer in the selected area, a processing mode is galvanometer splicing, specifically:
and controlling the laser beam to move and scribe lines by using the vibrating mirror, and performing splicing processing on the P2 laser scribe line area according to the processing width of the vibrating mirror.
9. The method for manufacturing a perovskite solar cell module according to claim 1, wherein in the P2 laser scribing, when the laser beam irradiates on the interface between the front electrode layer and the intermediate layer in the selected area, the processing mode adopted is a multi-path laser parallel method, specifically:
the multiple lasers work simultaneously, each laser is provided with a focusing mirror, and light spots formed by laser beams emitted by each laser after passing through the corresponding focusing mirrors are mutually independent.
10. A production system for a production method of the perovskite solar cell photovoltaic module as claimed in any one of claims 1 to 9, characterized in that: the preparation system comprises a laser processing device, wherein the laser processing device comprises the laser.
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| CN117399801A (en) * | 2023-09-04 | 2024-01-16 | 深圳市丰源升科技有限公司 | Laser etching scribing method of perovskite solar cell |
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| CN117399801A (en) * | 2023-09-04 | 2024-01-16 | 深圳市丰源升科技有限公司 | Laser etching scribing method of perovskite solar cell |
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