JPH08136576A - Semiconductor physical-quantity sensor - Google Patents

Abstract

PURPOSE: To obtain a semiconductor physical-quantity sensor which can be bonded surely by a small force by a method wherein a continuity part is crushed by a pressurization force and the crushed continuity part is spread to a relief part. CONSTITUTION: A compression-bonding part 11 which is composed of comb-teeth- shaped continuity parts 11a and of relief parts 11b in their gaps is formed at the inside of a glass cover 5. The inside of a derivation groove 12 which is formed so as to be recessed on the surface of a frame 3 is covered with an insulating film 13, and a compression-bonding part 14 which is composed of comb-teeth-shaped continuity parts 14a and of relief parts 14b is formed on it. The compression-bonding parts 11, 14 are crushed and bonded to each other in such a way that the continuity parts 11a on the side of the cover 5 are fitted to the relief parts 14b on the side of the frame 3 and that the continuity parts 14a on the side of the frame 3 are fitted to the relief parts 11b on the side of the cover 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor physical quantity sensor. Specifically, the present invention relates to an electrode lead-out structure of a semiconductor physical quantity sensor that detects physical quantities such as pressure and acceleration.

[0002]

2. Description of the Related Art FIG. 13 is a sectional view showing a conventional capacitance type pressure sensor 51. In this pressure sensor 51, an elastically deformable thin-film diaphragm 52 is formed in substantially the center of a frame 53, a cover 55 is superposed on the frame 53, and the periphery of the cover 55 is the frame 53.
Is joined to. A movable electrode 56 is formed on the upper surface of the diaphragm 52, and the movable electrode 56 is electrically connected to an electrode pad (not shown) on the upper surface of the frame 53. A hollow 54 is formed on the upper surface of the diaphragm 52, and a fixed electrode 57 is formed on the inner surface of the cover 55 with a small gap from the movable electrode 56. The fixed electrode 57 is drawn out by an electrode lead-out portion 58 provided on the inner surface of the cover 55, and the pressure-bonding pad 5 provided at the end of the electrode lead-out portion 58.
9 and the pressure bonding pad 61 on the upper surface of the frame 53 are connected by pressure bonding, and the pressure bonding pad 61 is further drawn out by the lead wiring 60 on the upper surface of the frame 53, whereby the fixed electrode 57 is formed on another electrode pad 62 at the end of the lead wiring 60. Connected.

[0003]

This lead-out wiring 60
The insulating film 6 is formed in the groove-shaped wiring portion 63 provided in the upper surface of the frame 53 from the recess 54 to the side end portion of the frame 53.
It is arranged through 4. Further, the pressure-bonding pad 59 of the electrode lead-out portion 58 and the pressure-bonding pad 61 of the lead-out wiring 60 were each formed in a flat plane shape as shown in FIG. Therefore, when the pressure-bonding pads 59, 61 have different thicknesses, and the pressure-bonding pads 59, 61 become thinner than the specified thickness, the two pressure-bonding pads 59, 61 are not sufficiently pressure-bonded and an electrical connection failure occurs. There was a problem that caused.

When the pressure-bonding pads 59 and 61 are thicker than the specified thickness, the overlapping thickness of the pressure-bonding portions becomes large and a gap is formed between the frame 53 and the cover 55, so that the bonding cannot be sufficiently performed. As a result, there is a problem that the frame 53 and the cover 55 are separated when heat is applied to the pressure sensor 51 or during a manufacturing process such as dicing.

The present invention has been made in view of the drawbacks of the above-mentioned conventional examples, and the purpose thereof is to join the frame and the cover without a gap and reliably draw the fixed electrode to the electrode pad on the frame. Especially.

[0006]

A semiconductor physical quantity sensor according to the present invention comprises a substrate provided with a physical quantity detecting section and a substrate bonded to at least one surface of the substrate, and one of the substrates is provided with an external By providing a connection wiring for electrical connection with and on the other substrate, an electrode relating to detection of a physical quantity and a connection wiring connected to the electrode are provided, and the two connection wirings are pressure-bonded to each other. In the semiconductor physical quantity sensor in which the connection wirings are electrically connected, at least one of the connection wirings is provided with a relief portion at which the connection wiring rolled by pressure bonding can escape.

At this time, it is preferable that at least a part of the pressure-bonding portion is made of Au.

Further, the relief portions are provided in the crimping portions of the connection wirings provided on the two substrates, and the connection wirings of the crimping portion of one of the substrates are press-fitted into the relief portions of the other substrate. Alternatively, the connection wirings of the two crimping portions may cross each other.

Further, the relief portion may be provided in the crimping portion of the connection wiring provided on one of the substrates, and the crimping portion of the connection wiring provided on the other substrate may be formed flat.

For example, the pressure-bonding portion provided with the relief portion may have a comb-teeth-shaped, island-shaped, lattice-shaped, spiral-shaped, concentric-circular, or radial pattern.

Further, the connection wiring is formed in a convex shape in a plan view at one of the crimping portions, and a relief portion is provided closer to the tip side than the tip edge of the connection wiring, and the connection wiring is concave in a plan view at the other crimping portion. And a relief portion is provided closer to the tip side than the tip edge of the connection wiring, and the tip edge of the connection wiring of the crimping portion that is convex in plan view and the tip edge of the connection wiring of the crimping portion that is concave in plan view You may make it connect and overlap with.

These semiconductor physical quantity sensors can be electrostatic capacity type sensors that take out the change of the detection section as electrostatic capacity changes, and can be used as pressure sensors and acceleration sensors.

[0013]

In the semiconductor physical quantity sensor of the present invention, when pressure is applied to the crimping portions, the connection wiring of the rolled crimping portion spreads to the relief portion and escapes. Since the connection wiring of the crimping part is crushed and escapes to the relief part, the crimping part can be crushed and crimped with a small force, and the crimping part can be sufficiently crushed by the pressing force for joining the board comers to the crimping part. It is possible to surely bond the substrates without being prevented from generating a gap between the two substrates. Moreover, the connection wirings of the crimping portion are crushed so that the crimping portions are securely joined together, and the two connection wirings can be surely connected without causing contact failure.

Since Au is soft and easily rolled, if at least a part of the crimp portion, for example, the surface of the crimp portion is made of Au, the crimp portion can be more reliably crimped. Further, since Au has a small sheet resistance, it is preferable to use Au for at least a part of the pressure-bonding portion.

Further, when the relief portions are respectively provided in the crimping portions of the two connection wirings, the connection wirings of the crimping portion are press-fitted into the other relief portions, and the two crimping portions are engaged with each other.
The crimping portion can be crimped more reliably. Alternatively, even if the two crimping portions are made to intersect with each other, the crimping portions can be crimped more reliably.

Further, if one of the crimping portions is formed flat, the crimping can be performed at any place of the flat crimping portion, so that the requirement for the alignment accuracy of the crimping portion can be relaxed. it can.

These structures are particularly effective for an electrostatic capacitance type sensor which takes out a change of the detecting portion as an electrostatic capacitance change, and can be applied to a pressure sensor, an acceleration sensor and the like.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a partially broken exploded perspective view of a capacitance type pressure sensor 1 according to an embodiment of the present invention. In the pressure sensor 1, a substantially circular elastically deformable thin film diaphragm 2 is arranged in the substantially center of a frame 3, and the frame 3 and the diaphragm 2 are integrally manufactured from a silicon wafer. The detected pressure is introduced to the lower surface of the diaphragm 2. A glass cover 5 is laid on the upper surface of the frame 3 and its peripheral portion is bonded to the frame 3 by an anodic bonding method or the like. Further, a recess 4 is formed in the frame 3 so that the diaphragm 2 can be displaced in the thickness direction thereof, and a pressure introduction passage 8 is recessed from the side end portion of the frame 3 to the recess 4. The upper surface of the diaphragm 2 is a movable electrode 6 having conductivity,
It is electrically connected to the electrode pad 9 formed on the exposed portion of the upper surface of the frame 3.

A fixed electrode 7, an electrode lead-out portion (connection wiring) 10 and a pressure-bonding portion 11 are formed on the inner surface of the cover 5. The fixed electrode 7, the electrode lead-out part 10 and the crimping part 11 are
For example, it can be integrally formed by sputtering aluminum or Au. In addition, a lead-out groove 13 is provided on the upper surface of the frame 3 from the recess 4 to the outer peripheral surface, and the bottom surface of the lead-out groove 13 is the insulating film 1.
It is covered with 2. Formed on the insulating film 12 are a crimp portion 14, an electrode pad 15, and a lead-out wiring (connection wiring) 16 for electrically connecting them. The crimp portion 14, the lead wiring 16 and the electrode pad 15 are integrally formed by sputtering aluminum, Au or the like, for example.

FIG. 2 is a perspective view of the pressure-bonding portion 11 on the cover 5 side and the pressure-bonding portion 14 on the frame 3 side of the pressure sensor 1. The pressure-bonding portion 11 is a linear conductive portion (connection wiring).
11a is formed in a comb tooth shape, and is formed so as to slightly project from the surface of the electrode lead-out portion 10. A gap serving as a relief portion 11b is formed between the conducting portions 11a. The conductive portion 11a is formed, for example, by using a mask having a comb-teeth pattern at the time of sputtering or by etching later. On the other hand, the crimping portion 14 on the frame 3 side also has a linear conductive portion (connection wiring) 14a formed in a comb-teeth shape, and is formed so as to slightly protrude from the surface of the lead wiring 16. A gap serving as a relief portion 14b is also formed between the conducting portions 14a.

When the pressure-bonding portion 11 and the pressure-bonding portion 14 are opposed to each other and the cover 5 and the frame 3 are pressure-bonded to each other,
As shown in FIG. 3, the conducting portion 11a of the crimping portion 11 is press-fitted into the relief portion 14b of the crimping portion 14 so as to engage with each other, and
The conducting portion 14a of the crimping portion 14 is the relief portion 14 of the crimping portion 11.
It is press-fitted so as to mesh with b. At this time, the conductive portions 11a and the conductive portions 14a crushed by the pressure bonding are pushed out to the relief portions 11b between the conductive portions 11a and the relief portions 14b between the conductive portions 14a, and are crushed to each other to be crimped to each other. Are joined. Therefore, the extra thicknesses of the crimping portions 11 and 14 can be eliminated by the conducting portions 11a and 14a.
It is absorbed by protruding to 14b, and as a result, there is no possibility that a gap is created between the frame 3 and the cover 5 due to the crimping portions 11 and 14, and the frame 3 and the cover 5 can be reliably joined. Moreover, the crimping portion 11 and the crimping portion 14 are also reliably electrically connected by the conductive portions 11a and 14a being crushed and crushed. Therefore, the fixed electrode 7 is prevented from interfering with the joint between the frame 3 and the cover 5.
Can be reliably pulled out electrically to the electrode pad 15, and the connection failure of the capacitance type sensor can be prevented. Also,
It is possible to provide a highly reliable pressure sensor 1 while increasing the yield of the pressure sensor 1 without the cover 5 peeling off during the manufacturing process. Furthermore, since the crimping portions 11 and 14 are not required to have high thickness accuracy, the manufacturing process can be simplified.

FIG. 4 is a front view showing the structure of the crimp portion 11 according to another embodiment of the present invention. As in this example,
If the pressure-bonding portion 11 has a two-layer structure of the chromium layer 18 and the Au layer 17 and the Au layers 17 are bonded to each other, the pressure-bonding property can be further enhanced due to the softness.
Further, the same effect can be obtained by mixing Au (for example, fine Au particles) into the conducting portion 11a or the conducting portion 14a. The crimp portion 14 may have the same electrode structure.

Although not shown, a similar effect can be obtained even with a three-layer structure of a chromium layer, a nickel layer, and an Au layer. ,

FIG. 5 is a perspective view showing the structure of the crimping portion 11 and the crimping portion 14 in still another embodiment of the present invention. In the crimping portion 11, the conducting portion 11a is formed in a comb shape in the vertical direction, and in the crimping portion 14, the conducting portion 14a is formed in parallel with the lateral direction, and each of the conducting portions is joined by joining the frame 3 and the cover 5. The conductive portions 11a and 14 are crimped so that the portions 11a and 14b intersect with each other and are crimped to each other.
a is a relief portion 11b or a conduction portion 14a between the conduction portions 11a.
It is crushed by the escape portion 14b between the two. By forming the conductive portions 11a and the conductive portions 14a so as to intersect with each other in this manner, the conductive portions 11a and the conductive portions 14a are reliably connected and the connection failure is further reduced. Further, the separated conductive parts 14a are electrically connected to each other via the conductive part 11a after pressure bonding.

Those shown in FIGS. 6 (a) and 6 (b) are, respectively,
It is a top view of the crimping | compression-bonding part 11 and the crimping | bonding part 14 in another Example of this invention. The cover 5 side crimp portion 11 is formed in a flat plane shape, and the frame 3 side crimp portion 14 is formed.
Then, the conducting portion 14a is formed in a lattice shape. Crimp part 1
When the pressure-bonding portion 1 and the pressure-bonding portion 14 are pressure-bonded to each other, the conductive portion 14a is crushed and spreads to the escape portions 14b scattered in an opening shape, and the pressure-bonding portion 14 is thinned, so that the cover 5 and the frame 3 can be bonded without a gap. . Of course, the crimping portion 14 on the frame 3 side is formed into a flat plane shape, and the crimping portion 1 on the cover 5 side is formed.
It is also possible to form the grid-shaped conductive portion 11a on the first substrate 1. Thus, the crimping portion 11 of the cover 5 or the frame 3
Either one of the crimping portions 14 of the
Alternatively, by forming 14a and forming the remaining one into a flat plane shape, it is not necessary to strictly align the crimp portion 11 and the crimp portion 14, and the requirement for alignment accuracy can be relaxed.

FIGS. 7 (a) and 7 (b) are plan views showing the crimping portion 11 and the crimping portion 14 in still another embodiment of the present invention. The pressure-bonding portion 11 on the cover 5 side is formed in a flat plane shape, and the pressure-bonding portion 14 on the frame 3 side is connected to the island-shaped conductive portion 1.
4a are scattered, and grid-shaped escape portions 14b are formed therebetween. After the conductive portions 14a that have been separated are pressure-bonded, the conductive portions 14a are crushed and brought into contact with each other to be electrically connected.

In addition to the above pattern, the crimping portions 11 and 14 may have various shapes. Some patterns are shown below.

In the structure shown in FIG. 8, a spiral conducting portion 14a is formed in the crimping portion 14 on the frame 3 side, and a spiral escape portion 14b is formed therebetween.

In the structure shown in FIGS. 9A and 9B, a circular or semi-circular flat crimp portion 1 is attached to the tip of the electrode lead-out portion 10.
1 is provided. The crimping portion 14 includes a conducting portion 14a having a circular shape and a radial shape (cross shape), and a relief portion 14b surrounded by the conducting portion 14a. Although not shown, the conductive portion 14a may have a radial shape except for the annular portion, or the conductive portion 14a having a concentric circular pattern may be used.

Although not shown, one conductive part is formed in an island shape, the other conductive part is formed in a grid pattern, and one island-shaped conductive part is formed in the other grid-shaped conductive part. The pressure-bonding region can be widened by fitting in the island-shaped escape portion and press-fitting.

In the example shown in FIGS. 10 (a) and 10 (b), on the cover 5 side, the conducting portion 11a of the crimping portion 11 is formed in a convex pattern in plan view, and is located on the tip side of the leading edge of the conducting portion 11a. The relief portion 11b is provided along the edge of the conducting portion 11a. Further, on the frame 3 side, the crimping portion 1
The conductive portion 14a of No. 4 is formed in a concave pattern in plan view,
A relief portion 14b is provided along the edge of the conducting portion 14a on the tip side of the leading end of the conducting portion 14a. here,
The width of the convex portion projecting to the center of the conducting portion 11a on the cover 5 side is larger than the inner width of the concave portion depressed at the center of the conducting portion 14a on the frame 3 side. Therefore, the crimp portion 1
When crimping 1, 14 comrades, as shown in FIG. 11, the leading edges of the two conducting parts 11a, 14a can be crimped over the entire length (or part of the leading edge) so that they can be electrically connected. You can At this time, since the crushed conducting portions 11a and 14a can spread to the relief portions 11b and 14b on the tip side of the conducting portions 11a and 14a, they are easily crushed with a small pressing force.

FIG. 12 is a sectional view showing an acceleration sensor 21 which is still another embodiment of the present invention. In the acceleration sensor 21, a beam 24 having a mass portion 23 having elasticity is provided at substantially the center of a frame 22 having a rectangular frame shape.
The mass portion 23 can be freely displaced in its thickness direction. A recess 25 is formed in the frame 23 on the upper surface of the mass portion 23. The mass portion 23, the beam 24, and the frame 22 are integrally manufactured from a silicon wafer, a movable electrode 26 is formed on the upper surface of the mass portion 23, and is electrically connected to an electrode pad (not shown) on the upper surface of the frame 22. Has been made. A glass cover 27 is laid on the upper surface of the frame 22, and its peripheral portion is covered by the anodic bonding method or the like.
Is joined to. The movable electrode 26 is provided on the inner surface of the cover 27.
A fixed electrode 28 is provided with a small gap therebetween, and a crimp portion 29 is provided at the end of an electrode lead-out portion 30 drawn from the fixed electrode 28. Also, the frame 22
A lead-out groove 31 is recessed from the recess 25 to the outer peripheral surface of the frame 22, and the bottom surface of the lead-out groove 31 is covered with an insulating film 32. In addition, the drawing groove 31
A crimping portion 33 and an electrode pad 34 are formed inside,
The crimp portion 33 and the electrode pad 34 are electrically connected by a lead wiring 35 formed integrally with them.

The pressure-bonding portion 29 and the pressure-bonding portion 33 of the acceleration sensor 21 are provided with a conductive portion and a relief portion similar to those described with respect to the pressure-bonding portion 11 and the pressure-bonding portion 14 of the pressure sensor 1. The cover 27 and the frame 23 can be reliably joined together without a gap. Further, the crimping portions 29 and 33 are also securely connected. In the acceleration sensor 21, when the acceleration is sensed, the mass portion 23 is displaced in the thickness direction thereof, the gap between the movable electrode 26 and the fixed electrode 28 is changed, and the electrostatic capacitance between the electrodes 26, 28 is changed. Therefore, the magnitude of the acceleration applied to the acceleration sensor 21 can be detected by detecting the change in the capacitance. The acceleration sensor 21 can also be used as a vibration sensor that detects vibration.

In the above embodiment, the case where the silicon substrate (frame) and the glass substrate (cover) are joined has been described, but the material of the substrate is not limited to silicon or glass. For example, it can be applied to a case where a cover made of silicon is joined to a frame made of silicon, and a case where a cover made of glass is joined to a frame made of a compound semiconductor such as GaAs. As a method of joining the substrates together, of course, other than the anodic joining method, a direct joining method of a silicon substrate and a silicon substrate, a method of joining the substrates together using water glass, or the like can be used.

Further, the present invention is not limited to the pressure sensor and the acceleration sensor having the two-layer structure in which the cover is joined to the upper surface of the frame as in the above-mentioned embodiment. It goes without saying that the present invention can be applied to a pressure sensor or an acceleration sensor having a layered structure, or a pressure sensor or an acceleration sensor having a three-layered structure in which a silicon frame is bonded to both upper and lower surfaces of a glass cover.

[0036]

According to the present invention, two substrates can be reliably joined together without a gap, and moreover, the crimping portion provided on one of the substrates and the crimping portion provided on the other substrate can be securely joined. Can be connected to.

At this time, a part of the crimp portion of the connection wiring is Au.
If it is formed from, the crimp portion can be crimped more reliably. The defective product generation rate of the semiconductor physical quantity sensor can be reduced, and a highly reliable sensor can be manufactured.

Further, the two crimping portions can be press-fitted to each other so as to be engaged with each other so that the crimping portions can be crimped more reliably, or the two crimping portions can be crossed to crimp the crimping portions more reliably.

If one crimping portion is formed flat,
It is possible to make the alignment accuracy of the crimp portion gentle.

These structures are particularly effective for an electrostatic capacitance type sensor which takes out a change of the detecting section as an electrostatic capacitance change, and can be applied to a pressure sensor, an acceleration sensor and the like.

[Brief description of drawings]

FIG. 1 is an exploded perspective view in which a pressure sensor according to an embodiment of the present invention is partially broken.

FIG. 2 is a perspective view showing a cover side and a frame side crimping portion of the above pressure sensor.

FIG. 3 is a schematic cross-sectional view showing a state when the above-mentioned crimping portions are crimped together.

FIG. 4 is a front view showing a cover-side crimp portion of a pressure sensor that is another embodiment of the present invention.

FIG. 5 is a perspective view showing a cover-side and frame-side crimping portion of a pressure sensor which is still another embodiment of the present invention.

FIG. 6A is a plan view showing a cover-side crimping portion of a pressure sensor which is still another embodiment of the present invention, and FIG. 6B is a plan view showing a frame-side crimping portion.

FIG. 7A is a plan view showing a cover-side crimping portion of a pressure sensor which is still another embodiment of the present invention, and FIG. 7B is a plan view showing a frame-side crimping portion.

FIG. 8 is a plan view showing a pressure-bonding portion on the frame side of a pressure sensor which is still another embodiment of the present invention.

FIG. 9A is a plan view showing a cover-side crimping portion of a pressure sensor which is still another embodiment of the present invention, and FIG. 9B is a plan view showing a frame-side crimping portion.

FIG. 10A is a plan view showing a cover-side crimping portion of a pressure sensor which is still another embodiment of the present invention, and FIG. 10B is a plan view showing a frame-side crimping portion.

FIG. 11 is an explanatory diagram showing a pressure-bonded state between the cover-side pressure-bonding portion and the frame-side pressure-bonding portion.

FIG. 12 is a sectional view showing an acceleration sensor according to still another embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a conventional pressure sensor.

FIG. 14 is a perspective view showing the cover-side and frame-side crimping portions of the above pressure sensor.

[Explanation of symbols]

 3 frame 4 movable electrode 5 cover 7 fixed electrode 8 pressure inlet 10 electrode lead-out part 11, 14 crimping part 11a, 14a conductive part 11b, 14b escape part 12 lead-out groove 13 insulating film 16 lead-out wiring

Claims (10)

[Claims] 1. A substrate provided with a physical quantity detection unit and a substrate bonded to at least one surface of the substrate, and one of the substrates is provided with a connection wiring for electrical connection to the outside. In the semiconductor physical quantity sensor in which the other substrate is provided with an electrode relating to detection of a physical quantity and a connection wiring connected to the electrode, and the two connection wirings are pressure-bonded to each other to electrically connect the two connection wirings. A semiconductor physical quantity sensor, wherein at least one of the connection wirings is provided with a relief portion through which the connection wiring rolled by crimping can escape. 2. The semiconductor physical quantity sensor according to claim 1, wherein at least a part of the crimp portion is made of Au. 3. The relief portion is provided in each crimping portion of the connection wiring provided on the two substrates, and the connection wiring of the crimping portion of one of the substrates is press-fitted into the relief portion of the other substrate. The physical quantity sensor for semiconductors according to claim 1 or 2. 4. The connection wiring of each of the two substrates is provided with the relief portion at each crimping portion of the connection wiring, and the connection wirings of the two crimping portions intersect with each other. Semiconductor physical quantity sensor. 5. The pressure relief portion is provided at the crimp portion of the connection wiring provided on one of the substrates, and the crimp portion of the connection wiring provided at the other substrate is formed flat.
Alternatively, the semiconductor physical quantity sensor described in 2. 6. The pressure-bonding portion provided with the relief portion has a comb-teeth shape, an island shape, a lattice shape, a spiral shape, a concentric circle shape, or a radial pattern.
The semiconductor physical quantity sensor according to 3, 4, or 5. 7. The connection wiring is formed in a convex shape in a plan view in one of the crimping portions, and a relief portion is provided closer to the tip side than the tip edge of the connection wiring, and the connection wiring is formed in a concave shape in a plan view in the other crimping portion. A relief portion is provided closer to the tip side than the tip edge of the connection wiring, and the tip of the connection wiring of the crimping portion that is convex in plan view and the tip of the connection wiring of the crimping portion that is concave in plan view are formed. 3. The semiconductor physical quantity sensor according to claim 1, wherein the semiconductor physical quantity sensors are connected to each other. 8. The semiconductor physical quantity sensor is an electrostatic capacitance type sensor that takes out a change in the detection unit as an electrostatic capacitance change.
The semiconductor physical quantity sensor according to 5, 6, or 7. 9. The semiconductor physical quantity sensor is a pressure sensor.
The semiconductor physical quantity sensor according to 6, 7, or 8. 10. The semiconductor physical quantity sensor is an acceleration sensor.
The semiconductor physical quantity sensor according to 5, 6, 7 or 8.