JPH08125208A - Photoelectric conversion device - Google Patents

Abstract

PURPOSE: To improve the adhesion between a substrate and a metal electrode layer by laying a conductive tungsten layer between the resin surface of the substrate and a metal electrode layer. CONSTITUTION: A metal electrode layer 2 having Al and Ti layers, a semiconductor light active layer 3 which consists of (a)-Si and (a)-SiC and has a semiconductor junction, a light reception surface electrode layer 4 consisting of a transparent electrode of ITO or SnO2 , are laminated in this order on a resin substrate 1 consisting of polyimide which is 5-100μm thick. Further, a conductive layer 6 consisting of tungsten (W) is included between the resin substrate 1 and the metal electrode layer 2. Then, when a peeling experiment is performed regarding the adhesion force between the resin substrate 1 and the metal electrode layer 2, a conventional example generates much peeling but inclusion of the conductive layer 6 consisting of W result in almost no peeling. Also, when the film thickness of the conductive layer 6 is 40Å or more, a sufficient peeling prevention effect can be achieved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device such as a photovoltaic device or an optical sensor using a substrate having a resin surface.

[0002]

2. Description of the Related Art As an example of this type of photoelectric conversion device, Japanese Patent Application Laid-Open No. 1-105581 discloses a photovoltaic device using a resin substrate.

FIG. 3 shows a manufacturing process of this photovoltaic device. In the first process of FIG. 3A, a polyimide varnish is applied to one main surface of the supporting substrate 10 made of glass, ceramics, metal or the like. Using a spin coater, a roll coater, or the like, a uniform coating with a thickness of 5 to 100 μm is performed.
The first resin layer 11 is formed by heat-curing at a temperature of 450 ° C.

In the second step shown in FIG. 3B, the first electrode layer 12, the semiconductor photoactive layer 13 having a semiconductor junction, the second electrode layer 14, and the second resin layer 15 are formed on the upper surface of the first resin layer 11.
Are laminated in this order. One of the first electrode layer 12 and the second electrode layer 14 is made of indium tin oxide (ITO),
It is composed of a transparent electrode such as tin oxide (SnO ₂ ), the other is an aluminum (Al) single layer structure, and is composed of Al / titanium (Ti).
It is composed of a metal electrode having a layered structure or the like. In addition, the semiconductor photoactive layer 1
3 is made of an amorphous semiconductor such as amorphous silicon (a-Si) or amorphous silicon carbide (a-SiC). Further, the second resin layer 15 is formed by thermocompression bonding a thermoplastic resin sheet such as polyethylene terephthalate (PET) or ethylene vinyl acetate (EVA).

Finally, in a third step shown in FIG. 3C, the first resin layer 11 is peeled off from the support substrate 10 by immersing the component manufactured in the above steps in water.
In this way, a flexible photovoltaic device using the first resin layer 11 as a substrate is formed.

[0006]

In the photovoltaic device having the above-mentioned structure, the first electrode layer 12 formed on the first resin layer 11 has the Al single layer structure or the Al / Ti 2 layer structure as described above. When such a metal electrode is used, there is a problem that peeling frequently occurs between the two because the adhesion between them is weak.

Therefore, an object of the present invention is to improve the adhesion between the substrate made of the first resin layer and the metal electrode layer and prevent the peeling between the two.

[0008]

The present invention provides a photoelectric conversion device in which a metal electrode layer, a semiconductor photoactive layer and a light-receiving surface electrode layer are laminated in this order on a substrate having a resin surface, and the resin surface of the substrate is A conductive layer made of tungsten is interposed between the metal electrode layer and the metal electrode layer.

[0009]

According to the present invention, the conductive layer made of tungsten interposed between the resin surface of the substrate and the metal electrode layer improves the adhesion between the two and prevents peeling.

[0010]

FIG. 1 shows a photovoltaic device as one embodiment of the present invention, in which a metal electrode layer having an Al / Ti two-layer structure is formed on a resin substrate 1 made of polyimide having a thickness of 5 to 100 μm. 2, a semiconductor photoactive layer 3 made of a-Si or a-SiC and having a semiconductor junction, a light-receiving surface electrode layer 4 made of a transparent electrode such as ITO or SnO ₂ and a transparent resin sheet 5 made of PET are laminated in this order. Is forming. Further, as a feature of the present invention, between the resin substrate 1 and the metal electrode layer 2,
The conductive layer 6 made of tungsten (W) is inserted.
The manufacturing method of this photovoltaic device is the same as that in the case of the above-mentioned conventional technique, and therefore its explanation is omitted.

In such a photovoltaic device, a peeling experiment was conducted on the adhesion between the resin substrate 1 and the metal electrode layer 2. In conducting the same experiment, a conventional example in which a metal electrode layer 2 having a two-layer structure of Al and Ti each having a film thickness of 1000 Å was formed directly on a resin substrate 1 made of polyimide, and a resin substrate 1
A comparative example and the present invention in which a conductive layer 6 made of Ti or W and having a film thickness of 40 Å was formed between the metal layer 2 and the metal electrode layer 2 were prepared. Then, after cross-cutting to a size of 1 mm square with a cutter knife, cellophane tape was adhered to this and it was observed how much area was peeled off. Table 1 shows the results.

[0012]

[Table 1]

As shown in the table, the conventional example and the comparative example are
While a large amount of peeling occurs, in the present invention in which the conductive layer 6 made of W is inserted, almost no peeling is observed.

FIG. 2 shows the film thickness dependence of the conductive layer 6 on the adhesion between the resin substrate 1 and the conductive layer 6. The graph shows that the conductive layer 6 and Al / T having various thicknesses are formed on the resin substrate 1.
After forming the metal electrode layer 2 having the i2 layer structure, a constant temperature and humidity (temperature 6
The results of peeling tests similar to those described above were performed after standing at 0 ° C. and relative humidity of 90 to 95% for 25 hours and 100 hours. As seen from the graph, the thickness of the conductive layer 6 is 40Å
It can be seen that if the above is satisfied, the effect of preventing peeling is sufficiently exerted.

In this embodiment, an example in which one photovoltaic device is formed on the resin substrate 1 is shown, but the present invention is not limited to this, and a plurality of electrically connected series on the resin substrate 1 are provided. A photovoltaic device may be formed. In that case, a conductive layer made of W may be formed between the resin substrate and the metal electrode layer for each photovoltaic device.

[0016]

According to the present invention, in a photoelectric conversion device in which a metal electrode layer, a semiconductor photoactive layer and a light-receiving surface electrode layer are laminated in this order on a substrate having a resin surface, the resin surface of the substrate and the metal electrode Since the conductive layer made of tungsten is interposed between the layer and the layer, the adhesion between the resin surface of the substrate and the metal electrode layer is improved, and peeling between the two can be prevented.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a graph showing the dependence of the adhesive force on the thickness of the conductive layer in the present invention.

FIG. 3 is a cross-sectional view showing a conventional example.

[Explanation of symbols]

 1 Resin Substrate 2 Metal Electrode Layer 3 Semiconductor Photoactive Layer 4 Light-Receiving Surface Electrode Layer 6 Conductive Layer

Claims (2)

[Claims] 1. A metal electrode layer on a substrate having a resin surface,
In a photoelectric conversion device in which a semiconductor photoactive layer and a light-receiving surface electrode layer are stacked in this order, a conductive layer made of tungsten is interposed between the resin surface of the substrate and the metal electrode layer. apparatus. 2. The photoelectric conversion device according to claim 1, wherein the conductive layer has a film thickness of 40 Å or more.