JPH08124707A - Thin film chip resistor - Google Patents
Thin film chip resistorInfo
- Publication number
- JPH08124707A JPH08124707A JP6284354A JP28435494A JPH08124707A JP H08124707 A JPH08124707 A JP H08124707A JP 6284354 A JP6284354 A JP 6284354A JP 28435494 A JP28435494 A JP 28435494A JP H08124707 A JPH08124707 A JP H08124707A
- Authority
- JP
- Japan
- Prior art keywords
- chip resistor
- pattern
- thin film
- resistance value
- branches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】 本発明は、小型電子回路に用い
る薄膜チップ抵抗器のパターン構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern structure of a thin film chip resistor used for small electronic circuits.
【０００２】[0002]
【従来の技術】 電子回路の小型化、高周波化が進むに
従い、チップ抵抗器においても超小型化高周波対応化の
必要性から薄膜チップ抵抗器の小型化の要求が高まって
いる。薄膜チップ抵抗器を製造する上において抵抗値ト
リミングを行なう手段として、レーザートリミングまた
は化成トリミングが用いられていた。2. Description of the Related Art As electronic circuits have become smaller and higher in frequency, there has been an increasing demand for miniaturization of thin film chip resistors due to the need for ultra-miniaturization and high frequency compatibility of chip resistors. Laser trimming or chemical conversion trimming has been used as means for performing resistance value trimming in manufacturing a thin film chip resistor.
【０００３】[0003]
【発明が解決しようとする課題】 従来作製されている
小型薄膜チップ抵抗器においては、外形寸法の超小型化
にともない、抵抗値トリミングの実施が困難になってい
た。図１に示すような従来の薄膜チップ抵抗器において
はレーザートリミングを施すために広い面積が必要であ
り、超小型のチップ抵抗器を作製する上での障害になっ
ていた。また抵抗値トリミングを実施しない製造方法で
は歩留まりの低下が重要な問題であった。In the conventionally manufactured small-sized thin film chip resistor, it has become difficult to perform resistance value trimming due to the miniaturization of external dimensions. In the conventional thin film chip resistor as shown in FIG. 1, a large area is required to perform laser trimming, which is an obstacle to manufacturing a microminiature chip resistor. Further, in the manufacturing method in which the resistance value trimming is not performed, the decrease in yield is an important problem.
【０００４】[0004]
【課題を解決するための手段】 上記問題を解決するた
めに本発明の薄膜チップ抵抗器は、抵抗体パターンに複
数の分岐を設けて各分岐の先端に電極パッドを形成する
ことにより、電極パッドを適宜選択することで抵抗値ト
リミングを施すことなく高精度に所望の抵抗値を得るも
のである。Means for Solving the Problems In order to solve the above-mentioned problems, a thin film chip resistor according to the present invention is provided with a plurality of branches in a resistor pattern, and an electrode pad is formed at the tip of each branch. By appropriately selecting, the desired resistance value can be obtained with high accuracy without performing resistance value trimming.
【０００５】[0005]
【実施例１】 次に本発明について図面を参照して説明
する。図２は本発明の１実施例の構造を示す平面図であ
る。図２に示すように、０．５×０．５mmの石英基板１
上にＮｉＣｒの抵抗膜２を作製し、パタンを形成する。
次にＴｉ、ＰｄおよびＡｕによって構成された電極膜３
を作製し、パターンを形成した。抵抗パターンは４本に
分岐しており各分岐の先端にＡからＤの電極パッドを形
成してある。分岐点Ｅから電極パッドまでの抵抗パター
ンの倍率はＡＥ間が１４倍、ＢＥ間が１２倍、ＣＥ間が
１６倍およびＤＥ間が１８倍である。面積抵抗値５０オ
ームの抵抗膜を使用した場合電極パッドＡＢ間で１，３
００オーム、ＢＣ間で１，４００オーム、ＡＣ間または
ＢＤ間で１，５００オーム、ＡＤ間で１，６００オーム
およびＣＤ間で１，７００オームと１００オームステッ
プで５種類の抵抗値を選択できるチップ抵抗器が得られ
た。First Embodiment Next, the present invention will be described with reference to the drawings. FIG. 2 is a plan view showing the structure of one embodiment of the present invention. As shown in FIG. 2, a 0.5 × 0.5 mm quartz substrate 1
A resistance film 2 of NiCr is formed on the top and a pattern is formed.
Next, an electrode film 3 composed of Ti, Pd and Au
Was prepared and a pattern was formed. The resistance pattern is branched into four lines, and electrode pads A to D are formed at the tip of each branch. The resistance pattern from the branch point E to the electrode pad has a magnification of 14 times between AE, 12 times between BE, 16 times between CE and 18 times between DE. When a resistance film with a sheet resistance of 50 ohms is used 1,3 between the electrode pads AB
Five resistance values can be selected in 00 ohms, 1,400 ohms between BC, 1,500 ohms between AC or BD, 1,600 ohms between AD and 1,700 ohms between CD and 100 ohm steps. A chip resistor was obtained.
【０００６】[0006]
【発明の効果】 従来作製されている薄膜チップ抵抗器
は、小型化にともない抵抗値トリミングの実施が技術的
に困難になった。本発明により作製した薄膜チップ抵抗
器は抵抗パターンに複数の分岐を設けてかつ各分岐のパ
ターン倍率を異なる倍率にすることにより、電極パッド
を選択するだけで抵抗値トリミングを実施することなく
所望の抵抗値が得られる。EFFECTS OF THE INVENTION The thin-film chip resistor that has been conventionally manufactured is technically difficult to perform resistance value trimming as the size thereof is reduced. The thin film chip resistor manufactured according to the present invention is provided with a plurality of branches in the resistance pattern and the pattern magnifications of the respective branches are made different, thereby making it possible to select desired electrode pads without performing resistance value trimming only by selecting electrode pads. The resistance value is obtained.
【図１】 従来の薄膜チップ抵抗器の構造を示す平面図
である。FIG. 1 is a plan view showing a structure of a conventional thin film chip resistor.
【図２】 本発明を説明するための構造を示す平面図で
ある。FIG. 2 is a plan view showing a structure for explaining the present invention.
１ 基板 ２ 抵抗パターン ３ 電極パッド ３-1 電極パッドＡ ３-2 電極パッドＢ ３-3 電極パッドＣ ３-4 電極パッドＤ ４ 分岐点Ｅ ５ トリミング部分 1 substrate 2 resistance pattern 3 electrode pad 3-1 electrode pad A 3-2 electrode pad B 3-3 electrode pad C 3-4 electrode pad D 4 branch point E 5 trimming part
Claims (2)
り電極膜及び抵抗膜を形成してなる薄膜チップ抵抗器に
おいて、抵抗パターンに複数の分岐を設けてかつ各分岐
の先端部分に電極パッドを形成したことを特徴としたチ
ップ抵抗器の構造。1. A thin film chip resistor comprising an electrode film and a resistance film formed on an electrically insulating substrate by a vacuum deposition method or the like, wherein a plurality of branches are provided in a resistance pattern and an electrode is provided at a tip portion of each branch. A chip resistor structure characterized by forming pads.
率を変えることにより、抵抗値トリミングを施すことな
く所望の抵抗値を得ることを特徴としたチップ抵抗器の
構造。2. The structure of a chip resistor, wherein a desired resistance value is obtained without performing resistance value trimming by changing a pattern magnification of each branch of the resistance pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6284354A JPH08124707A (en) | 1994-10-24 | 1994-10-24 | Thin film chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6284354A JPH08124707A (en) | 1994-10-24 | 1994-10-24 | Thin film chip resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08124707A true JPH08124707A (en) | 1996-05-17 |
Family
ID=17677510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6284354A Pending JPH08124707A (en) | 1994-10-24 | 1994-10-24 | Thin film chip resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08124707A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8144481B2 (en) | 2009-01-09 | 2012-03-27 | Samsung Electronics Co., Ltd. | Memory board structure having stub resistor on main board |
| US8395091B2 (en) | 2008-02-06 | 2013-03-12 | H.E.F. | Method for fabricating a heating element by depositing thin layers on an insulating substrate and the element thus obtained |
| CN118692765A (en) * | 2024-08-22 | 2024-09-24 | 深圳市业展电子有限公司 | Resistor plate with shunt resistor shape for current detection and production process |
-
1994
- 1994-10-24 JP JP6284354A patent/JPH08124707A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395091B2 (en) | 2008-02-06 | 2013-03-12 | H.E.F. | Method for fabricating a heating element by depositing thin layers on an insulating substrate and the element thus obtained |
| US8144481B2 (en) | 2009-01-09 | 2012-03-27 | Samsung Electronics Co., Ltd. | Memory board structure having stub resistor on main board |
| CN118692765A (en) * | 2024-08-22 | 2024-09-24 | 深圳市业展电子有限公司 | Resistor plate with shunt resistor shape for current detection and production process |
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