JPH08110637A - Photoresist composition and etching method - Google Patents

Abstract

PURPOSE: To enhance sensitivity, to diminish residue on development, to ensure superior suitability to coating and to prevent the clogging of a fliter by incorporating novolak resin, a compd. crosslinkable with an acid, propylene glycol monoalkyl ether and two kinds of photosensitive s-triazine compds. CONSTITUTION: This photoresist compsn. contains novolak resin, a compd. crosslinkable with an acid, propylene glycol monoalkyl ether and/or its ester, a photosensitive s-triazine compd. represented by formula I and a photosensitive s-triazine compd. selected from among compds. representd by formulae I-III and different from the former photosensitive s-triazine compd. In the formulae I-III, each of R1 and R2 is 1-3C haloalkyl or haloalkenlyl, R3 is halogen, alkyl, etc., each of R4 and R5 is H, halogen, etc., each of R6 and R7 is H, alkyl, etc., R8 is H, halogen, etc., and R9 is a heterocyclic group or aryl which is not substd. at the 4-position and may be substed. at the other positions.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a UV-sensitive photoresist composition comprising a specific UV-sensitive acid generator, a compound which induces a crosslinking reaction by an acid and an alkali-soluble novolac resin. Is about
More specifically, it relates to a photoresist composition having excellent coating properties and substantially no filter clogging during filtration.

The present invention relates to an etching method. The photoresist composition according to the present invention is applied to a substrate of glass, semiconductor wafer, ceramics, metal or the like in a thickness of 0.5 to 3 μm by a spin coating method or a roller coating method. After that, a negative image is obtained by heating and drying, baking a circuit pattern or the like through an exposure mask by ultraviolet irradiation, and further performing a post-exposure heating step (PEB) and then developing. Further, the substrate can be processed in a pattern by etching using this image as a mask.

Typical fields of application are manufacturing processes for circuit boards such as liquid crystals and thermal heads, manufacturing semiconductors such as ICs, and other photo-application processes. Further, it can be applied to a lithographic printing plate by utilizing the difference in affinity between the image and the supporting substrate for ink.

[0004]

2. Description of the Related Art As the degree of integration of semiconductor substrates is increased, higher resolution of photoresist is required. But,
It is known that a negative resist composed of a cyclized rubber and a photo-crosslinking agent such as bisazide causes swelling in the developing process and impairs the resolution. With a positive photoresist composed of a novolak resin and a dissolution inhibitor such as naphthoquinonediazide, such swelling does not occur and a high resolution can be obtained. Therefore, currently, fine processing of semiconductors and the like is centered on lithography using a positive resist.

The novolak resin as a binder has such an advantage that it is soluble in a developing solution without swelling. Further, the novolac resin provides the resist with high plasma etching resistance, and further has the advantage that it can be developed with an aqueous alkali. Therefore, it is one of the most desirable binders as a base material for resists, especially for microfabrication of semiconductors.

Various attempts have been made to design a positive type photoresist composed of naphthoquinonediazide and a novolak resin in order to obtain high resolution, and many patents and documents have been disclosed. For example, in a positive photoresist, it has been found that the naphthoquinonediazide compound has an important effect of suppressing dissolution of a novolak resin as a factor that governs the resolution. This is because the greater the effect, the greater the dissolution contrast between the exposed and unexposed areas during the development process. In recent years, much has been known about the essence of such dissolution suppressing action in relation to the molecular structures of novolak resins and photosensitizers. For example, Proceedings of the SPIE Microlithography Symposium, Vol. 920, No. 349, Vol. 1262, 476.
Page, page 493, and the like discuss this dissolution suppressing effect in relation to the molecular structure and physical properties of novolak resins, and many other documents and patents discuss such viewpoints.

On the other hand, in pattern transfer for processing, depending on the type of pattern or mask to be formed, it may be desired that the resist form a negative image instead of a positive image. As a negative resist using a novolac resin as a binder, those containing a photocrosslinking agent such as bisazide are known, but the latitude of development is narrow, and since the photoabsorption of the photocrosslinking agent is large, the resist pattern There is a serious drawback that the cross-sectional shape exhibits an inverted trapezoid.

Another method is to obtain a negative photosensitive resin composition by combining a photo-acid generator and an additive that causes a curing reaction of a binder of an alkali-soluble resin with an acid as a catalyst to add it to the alkali-soluble resin. . In this method, the chemical reaction yield based on the catalytic reaction can be expected to be amplified in the reaction process following exposure, so that the amount of the photosensitizer added, that is, the amount of the light absorbing component can be reduced. Therefore, it is possible to solve the above-mentioned problem of the cross-sectional shape peculiar to the negative type, and it can be expected to be promising as a resist material for fine processing. Further, since the reaction system involves chemical amplification, high quantum yield, that is, high sensitivity can be expected. Therefore, if this photosensitive composition is used as a photosensitive layer for lithographic printing, it can be used for a high-sensitivity printing plate suitable for drawing with a laser beam.

The following prior art is known for such a photocrosslinkable resin composition. That is, Japanese Patent Publication 54-
Japanese Patent Publication No. 23574 discloses a technique of photocuring an alkali-soluble resin or the like in combination with a photoacid generator made of an organic halide. West German Laid-Open Patent No. 2057473 describes that a phenol resin can be applied as a binder of a photoacid generator composed of a diazo compound and a photocrosslinkable composition composed of methylolated melamine and the like.

Japanese Patent Publication No. 62-44258 discloses a similar technique using an s-triazine compound having a binuclear or trinuclear aromatic group. JP-A-60-2631
Japanese Patent Laid-Open No. 43 discloses a composition comprising a photoacid generator, an acid crosslinkable aminoplast resin such as melamine resin, and a general novolac resin, and a negative image having aqueous developability and high heat stability can be obtained. I am trying.

JP-A-62-164045 describes that an organic halide having light absorption in the far ultraviolet region can be advantageously used as a photo-acid generator for such a composition. Similarly, Japanese Patent Application Laid-Open No. 2-52348 describes that an organic halide having a pKa value in a specific region is advantageous as a photoacid generator of a similar system. JP-A-2-15426
No. 6 discloses that oxime sulfonates are effective as photoacid generators for similar photocrosslinkable compositions.

The specification of JP-A-5-341522 shows that a specific nitrogen-containing trihalomethyltriazine compound is effective as a photoacid generator for a similar photocrosslinkable composition. Japanese Unexamined Patent Publication No. 5-313370 discloses that the use of a specific trihalomethyltriazine compound as a photoacid generator of a similar photocrosslinkable composition provides a high resolution.

As another example, Japanese Patent Laid-Open No. 2-1460
No. 44 discloses that a composition in which a photoacid generator having a specific trichloromethyltriazine group and a novolak resin containing 30% or more of m-cresol in alkoxylated melamine are useful for high energy ray exposure. Is stated. Further, European Patent 397460A discloses the use of a highly branched novolak resin in a similar composition. However, none of the compositions of any of the publications show sufficient sensitivity to light in the near-ultraviolet region, and particularly g-line (436 nm) and h-line which are exposure wavelengths in substrate processing for liquid crystal display panel applications. (405n
The reality is that it does not have sufficient sensitivity to m).

Further, in Japanese Patent Application No. 5-251778, a photosensitive s-triazine compound, a novolac resin,
It is shown that the resist composition in which the acid-crosslinking compound is combined has high sensitivity and is less likely to cause residual development. But,
There were problems with coating properties and filter clogging during filtration.

[0015]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a photoresist composition which has high sensitivity, is less likely to cause undeveloped residue, is excellent in coating property, and is substantially free from filter clogging during filtration. Is to provide. Further, although the object of the present invention is particularly useful as a microphotoresist for processing a liquid crystal display substrate, a photoresist that can be used for a photosensitive printing plate for semiconductor processing and lithographic plate by utilizing the feature of its high sensitivity. It is to provide a composition.

A further object of the present invention is to provide a method for wet etching a substrate using the above photoresist composition.

[0017]

As a result of various studies, the inventors have found that the above-mentioned problems are a) novolac resin, b) acid-crosslinkable compound, c) propylene glycol monoalkyl ether and / or its esters, and d. ) A photosensitive s-triazine compound represented by the general formula (I) and e) a general formula (I), a general formula (II) and a general formula (II).
Selected from the group represented by I) and the photosensitivity s of d) above.
It has been found that a photoresist composition containing a photosensitive s-triazine compound different from the triazine compound has a particularly excellent coatability and causes substantially no filter clogging during filtration.

[0018]

Embedded image

In the general formulas (I), (II) and (III), R ₁ and R ₂ each independently represent a haloalkyl group or a haloalkenyl group having 1 to 3 carbon atoms, and R ₃
Is a halogen atom, an alkyl group, a substituted alkyl group, an alkoxy group, an aryl group or a substituted aryl group, and R _{4 to} R ₅
Are each independently a hydrogen atom, a halogen atom, an alkyl group, a substituted alkyl group, an alkoxy group, an aryl group or a substituted aryl group, and R _{6 to} R ₇ are each independently a hydrogen atom, an alkyl group, a substituted alkyl group, an alkoxy group, An aryl group or a substituted aryl group, R ₈ is a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group, and R ₉ is a heterocyclic group or an aryl group which may be unsubstituted at the 4-position and substituted at the other positions. Represents

That is, the present invention contains two or more kinds of photosensitive s-triazines having a specific structure as a photo-acid generator, so that the coating property is excellent and the filter clogging during filtration is substantially unlikely to occur. A photoresist composition (hereinafter, sometimes referred to as a photosensitive composition) can be provided. That is, the present invention comprises two different vinyl-halomethyl-S-triazine compounds in combination, and a vinyl-halomethyl-S-triazine compound and allyl-halomethyl-S-triazine in combination.

The present invention may be either a negative type or a positive type, but a negative type photoresist composition is preferable.

The present invention will be described in detail below. Examples of the compounds represented by the general formulas (I), (II) and (III) include J.
A. Boham et al. U.S. Patents 3,954,475 and 3,987,037
And vinyl-halomethyl-S-triazine compounds and allyl-halomethyl-S-triazine compounds described in No. Furthermore, specific examples of the general formula (I) include (1) to (7) in the following (Chemical Formula 3), specific examples of the general formula (II) include (8) and (9), and a general formula (III) Specific examples of () include (10) to (19).

[0023]

Embedded image

In the composition of the present invention, the acid generator is contained in an amount of 0.001 to 40% by weight, preferably 0.
05-20% by weight, more preferably 0.1-10% by weight
Used in the range of. When the amount of the acid generator is too small, high sensitivity cannot be obtained, and the film loss of the image is further increased to deteriorate the shape. If the amount is too large, the undeveloped portion may increase or the image may have an inverted trapezoidal sectional shape, which is not preferable.

In the present invention, the general formula (II) for the resin component (novolak resin and acid-crosslinkable compound) is used.
The component amount of the photosensitive s-triazine compound represented by I) is preferably less than 0.5% by weight. Further, it is desirable that the absorption wavelength of the photo-acid generator to be used is sufficiently overlapped with the exposure wavelength, but if this does not match well, it can be compensated by addition of various spectral sensitizers.

Specific examples of such a method are disclosed in, for example, Japanese Patent Application Laid-Open No. 3-87748, US Pat. No. 410201, and European Patent 422570A. In the composition of the present invention, the mixing weight ratio of d) and e) of the acid generator is 99: 1 to 55:45, preferably 97: 3 to 6.
It is used in the range of 0:40, more preferably 95: 5 to 60:40. If the ratio of the acid generator e) is too small, the effect of the present invention cannot be obtained. If it is too large, the sensitivity is lowered and the cross-sectional shape of the image exhibits an inverted trapezoid, which is not preferable. Further, two or more kinds of e) may be used in combination with d) of the acid generator, but the total amount of e) is within the mixing range.

The acid-crosslinking compound of the present invention includes a compound which reduces the solubility of the novolak resin in alkali by crosslinking or polymerization reaction under an acid catalyst or in combination with heating. One of typical examples of such a compound is a compound having a methylol group as a formaldehyde precursor or a substituted methylol group, and includes a structure represented by the following general formula.

(R ₁₀ O—CH ₂ ) n—A— (CH ₂ —OR ₁₁ ) m In the above formula, A is a group represented by the formula B or BYB, and B is a substituent or An unsubstituted mononuclear or condensed polynuclear aromatic hydrocarbon or a heterocyclic compound containing oxygen and / or sulfur and / or nitrogen. Y is a single bond or alkylene of C ₁ -C _4, substituted alkylene, arylene, substituted arylene, arylalkylene, or -O, -, - S -, - SO 2 -, - CO -, - COO
A-, -OCOO-, -CONH- bond and a substituted or unsubstituted alkylene group having such a bond are meant. Further, Y may be a polymer such as a phenol resin.

R ₁₀ and R ₁₁ each independently represent a hydrogen atom, alkyl having 1 to 4 carbon atoms, cycloalkyl, substituted or unsubstituted aryl, alkaryl, arylalkyl or acyl group. n is 1 to 3, m is 0
The range is from 3 to 3. Specific examples of such compounds include various aminoplasts or phenoplasts, that is, urea-formaldehyde, melamine-formaldehyde, benzoguanamine-formaldehyde, glycoluril-formaldehyde resins and their monomers or oligomers. There is. Many of these are commercially available from manufacturers for applications such as vehicles for paints.
For example, Cym manufactured by American Cyanamid
el (registered trademark) 300, 301, 303, 350, 3
70, 380, 1116, 1130, 1123, 112
5, 1170, etc., or Sanwa Chemical Co. Nikarac (registered trademark) MW30, MW30M, MW30HM, M
The series such as X45 and BX4000 can be mentioned as a typical example. These may be used alone or in combination of two or more.

Another specific example is a methylolated or alkoxymethylated phenol derivative which can be a formaldehyde precursor. These may be used as a monomer or may be used as a resin such as a resole resin or a benzyl ether resin. Further, as another system of the acid-crosslinking compound, a compound having a silanol group, for example, compounds as disclosed in JP-A-2-154266 and JP-A-2-173647 can be used.

In the composition of the present invention, these acid-crosslinkable compounds are 0.001 to 30% by weight, preferably 0.05 to 25% by weight, more preferably 0.1 to 20% by weight, based on the novolac resin. Used in the range of%. If the amount of the acid-crosslinking compound is too small, high sensitivity cannot be obtained, and the film loss of the image is further increased to deteriorate the shape. If too much,
It is not preferable because the releasability after processing the substrate deteriorates.

The novolak resin used in the present invention is obtained by addition-condensing an aldehyde with a predetermined monomer as a main component in the presence of an acidic catalyst. Examples of the predetermined monomer include cresols such as phenol, m-cresol, p-cresol and o-cresol, and 2,5-
Xylenol such as xylenol, 3,5-xylenol, 3,4-xylenol, 2,3-xylenol, m
-Ethylphenol, p-ethylphenol, o-ethylphenol, pt-butylphenol, 2,3,5
-Alkylphenols such as trimethylphenol, p
-Methoxyphenol, m-methoxyphenol, 3,
Alkoxyphenols such as 5-dimethoxyphenol, 2-methoxy-4-methylphenol, m-ethoxyphenol, p-ethoxyphenol, m-propoxyphenol, p-propoxyphenol, m-butoxyphenol and p-butoxyphenol, 2 -Methyl-4
-Bisalkylphenols such as isopropylphenol, m-chlorophenol, p-chlorophenol, o
-Hydroxy aromatic compounds such as chlorophenol, dihydroxybiphenyl, bisphenol A, phenylphenol, resorcinol, and naphthol may be used alone or in combination of two or more, but are not limited thereto.

Examples of aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde. , O-chlorobenzaldehyde,
m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-
Methylbenzaldehyde, p-ethylbenzaldehyde, pn-butylbenzaldehyde, furfural,
Chloroacetaldehyde and acetals thereof such as chloroacetaldehyde diethyl acetal can be used, and of these, formaldehyde is preferably used.

These aldehydes may be used alone or in combination of two or more. As the acidic catalyst, hydrochloric acid, sulfuric acid, formic acid, acetic acid, oxalic acid or the like can be used. The weight average molecular weight of the novolak resin thus obtained is preferably in the range of 1,000 to 30,000. If it is less than 1,000, the film loss of the unexposed area after development is large, and if it exceeds 30,000, the developing speed becomes small. Especially preferred is 2,000 to 20,000.
It is in the range of 0.

Here, the weight average molecular weight is defined by the polystyrene conversion value of gel permeation chromatography. In the composition of the present invention, these novolak resins are present in a concentration necessary for film formation, which is 40% by weight or more, preferably 60 to 9% by weight based on the total solid content.
It is used in an amount of 9%, more preferably 70 to 99%.

The composition of the present invention may contain a low molecular weight aromatic polyhydroxy compound in order to accelerate dissolution in a developing solution, adjust sensitivity, and improve other characteristics. As such a polyhydroxy compound, many compounds known as additives for accelerating dissolution of a positive photoresist composed of a naphthoquinonediazide novolak resin can be applied as they are. However, since the sensitizing effect and the film loss often occur simultaneously within the range of the usual dissolution promoting effect, it is preferable to combine the polyhydroxy compound itself with the optimum alkali solubility in accordance with the resist composition. Choose the one with the least problems.

In the photosensitive composition of the present invention, if necessary,
Further, dyes, pigments, plasticizers, surfactants, photosensitizers and the like can be contained. Specific examples thereof include methyl violet, crystal violet, dyes such as malachite green, stearic acid, acetal resin,
Plasticizers such as phenoxy resin, alkyd resin, epoxy resin, hexamethyldisilazane, chloromethylsilane,
There are organic phosphoric acid compounds, adhesion promoters such as ureas, and surfactants such as nonylphenoxypoly (ethyleneoxy) ethanol and octylphenoxypoly (ethyleneoxy) ethanol.

Particularly in dyes, dyes containing an alkali-soluble group such as an aromatic hydroxyl group and a carboxylic acid group in the molecule, for example, curcumin, are particularly advantageously used. Suitable dyes include oil dyes and basic dyes. Specifically, Oil Yellow # 101, Oil Yellow # 103, Oil Pink # 312, Oil Green BG, Oil Blue B.
OS, Oil Blue # 603, Oil Black BY, Oil Black BS, Oil Black T-505 (all manufactured by Orient Chemical Industry Co., Ltd.), Crystal Violet (CI42555), Methyl Violet (CI42).
535), Rhodamine B (CI45170B), Malachite Green (CI42000), Methylene Blue (C).
I52015) and the like.

Further, the spectral sensitizers described below can be added to improve the sensitivity of the photosensitive composition of the present invention at i-line and / or h-line and / or g-line. As a suitable spectral sensitizer, specifically, p, p'-
Tetramethyldiaminobenzophenone, p, p'-tetraethyldiaminobenzophenone, 2-chlorothioxanthone, anthrone, 9-ethoxyanthracene, anthracene, perylene, acridine orange, benzoflavin, cetoflavin-T, 9,10-diphenylanthracene, 9-fluorenone. , Acetophenone, phenanthrene, 2-nitrofluorene, 5-nitroacenaphthene, benzoquinone, 2-chloro-4-nitroaniline,
N-acetyl-p-nitroaniline, p-nitroaniline, N-acetyl-4-nitro-1-naphthylamine,
Picramid, anthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone 1,2-benzanthraquinone, 3-methyl-1,3-diaza-1,9-
Examples thereof include, but are not limited to, benzanthrone, dibenzalacetone, 3,3′-carbonyl-bis (5,7-dimethoxycarbonylcoumarin) and coronene.

The photosensitive composition of the present invention is applied to a substrate by dissolving it in a solvent that dissolves the above components. As the solvent used here, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate and the like are preferable, and these solvents are used alone or as a mixture.

A surfactant may be added to the above solvent. Specifically, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether,
Polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonylphenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, Sorbitan fatty acid esters such as sorbitan tristearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate Surfactants such as polyoxyethylene sorbitan fatty acid esters such as acrylates and the like, F-top EF301, E 303, EF352 (manufactured by Shin Akita Kasei Co., Ltd.), Megafac F171, F173 (manufactured by Dainippon Ink Co., Ltd.), Flora - de FC430, FC43
1 (manufactured by Sumitomo 3M Limited), Asahi Guard AG71
0, Surflon S-382, SC101, SC102,
Fluorine-based surfactants such as SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.), KP341
(Manufactured by Shin-Etsu Chemical Co., Ltd.), a surfactant having a silicon-containing group, an acrylic acid-based or methacrylic acid-based (co) polymerized polyflow No. 75, No. 95 (manufactured by Kyoeisha Oil and Fat Chemical Co., Ltd.) and the like. The content of these surfactants is usually 2% by weight or less, preferably 1% by weight or less, based on the solid content in the composition of the present invention.

These surfactants may be added alone or in some combinations. A substrate (eg, glass / ITO coating, glass /
Silicon nitride coating) or a substrate (eg, silicon / silicon dioxide coating) that is used in the manufacture of precision integrated circuit devices, is coated by a suitable coating method such as a spinner or coater, and then exposed through a specified mask and exposed. A good resist pattern can be obtained by adding a heating step (PEB) at a temperature of about 80 ° C. to 130 ° C. and then developing.

When the photosensitive resin composition of the present invention is used for lithographic printing, the composition is applied to, for example, a support obtained by anodizing an aluminum plate roughened by a method such as electrolytic graining or mechanical polishing. The product can be used by applying it to a thickness of about 1 to 2 μm. The developer of the photosensitive composition of the present invention, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, inorganic alkalis such as aqueous ammonia, ethylamine,
Primary amines such as n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetra Aqueous solutions of quaternary ammonium salts such as methylammonium hydroxide and tetraethylammonium hydroxide, and alkalis such as cyclic amines such as pyrrole and pyrelidine can be used.

Further, an appropriate amount of alcohols and surfactants may be added to the aqueous solution of the above alkalis for use. The method of etching a substrate using the positive photoresist composition of the present invention comprises (1) a step of applying a photoresist on the substrate, (2) a step of pattern-exposing the photoresist and then developing, (3) Wet etching of a substrate using a pattern as a resist, which is an etching method using the photoresist composition of the present invention as the photoresist.

As such an etching method of the present invention, a conventional method can be used.

[0046]

EXAMPLES The present invention will now be described in more detail with reference to examples, but the contents of the present invention are not limited thereto. Examples 1 to 22, Comparative Examples 1 to 11 Cresol novolac resin (m / p = 6/4; Mw = 4)
500 g) and 0.5 g of Nikalac (registered trademark: manufactured by Sanwa Chemical Co., Ltd.) MW30M containing methylolated melamine as a main component as an acid cross-linking agent, and further represented by (Chemical Formula 3) as a photo-acid generator and Table 1. , 2 to give 14.4
g to dissolve it in propylene glycol monomethyl ether acetate to prepare a photoresist composition. This photoresist composition was applied on a clean silicon wafer using a spinner, and then applied on a hot plate at 90 ° C. for 60 minutes.
After drying for 2 seconds, a resist film having a film thickness of 1.5 μm was obtained. Observe the degree of coating of this resist film, and
This composition was filtered with a microfilter of No. 1 to rank the filterability.

The results are summarized in Tables 1 and 2. As is clear from the above, it can be seen that the composition according to the present invention has excellent coatability and substantially does not cause filter clogging during filtration.

[0048]

[Table 1]

[0049]

[Table 2]

[0050]

INDUSTRIAL APPLICABILITY The present invention can provide a photoresist composition having high sensitivity, less development residue, excellent coating property, and substantially no filter clogging during filtration. Further, the present invention is particularly useful as a microphotoresist for processing a liquid crystal display substrate,
Taking advantage of its high sensitivity, it is possible to provide a photoresist composition that can be used in a photosensitive printing plate for semiconductor processing and planographic printing.

Further, the present invention can provide a method of wet etching a substrate using the above photoresist composition.

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[Procedure amendment]

[Submission date] November 7, 1994

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0044

[Correction method] Change

[Correction content]

Further, an appropriate amount of alcohols and surfactants may be added to the aqueous solution of the above alkalis for use. Etching method of a substrate using a full photoresists compositions of the present invention, (1) applying a photoresist on a substrate, a step of developing after the pattern exposure (2) the photoresist, and (3) the pattern Wet etching a substrate as a resist, which is an etching method using the photoresist composition of the present invention as the photoresist.

Claims (3)

[Claims] 1. A) novolac resin, b) acid crosslinkable compound, c) propylene glycol monoalkyl ether and / or its esters, and d) a photosensitive s-triazine compound represented by the general formula (I) and e. ) A photosensitive s-triazine compound selected from those represented by the general formula (I), the general formula (II) and the general formula (III) and different from the photosensitive s-triazine compound of the above d). Photoresist composition. Embedded image In the general formulas (I), (II) and (III),
R ₁ and R ₂ are each independently a haloalkyl group or a haloalkenyl group having 1 to 3 carbon atoms, R ₃ is a halogen atom, an alkyl group, a substituted alkyl group, an alkoxy group,
An aryl group or a substituted aryl group, R _{4 to} R ₅ are each independently a hydrogen atom, a halogen atom, an alkyl group, a substituted alkyl group, an alkoxy group, an aryl group or a substituted aryl group, and R _{6 to} R ₇ are each independently. A hydrogen atom, an alkyl group, a substituted alkyl group, an alkoxy group, an aryl group or a substituted aryl group, R ₈ represents a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group, and R ₉ represents a heterocyclic group or a non-substituted 4-position. The substitution at the other position represents an optionally substituted aryl group. 2. The amount of the photosensitive s-triazine compound represented by the general formula (III) relative to the resin components (novolak resin and acid-crosslinkable compound) is less than 0.5% by weight. 1. The photoresist composition according to 1. 3. A method comprising: (1) applying a photoresist on a substrate; (2) pattern exposing the photoresist and then developing; and (3) wet etching the substrate using the pattern as a resist. In the etching method, the photoresist composition according to claim 1 is used as the photoresist.