JPH08102264A - Slow wave circuit structure for traveling-wave tube - Google Patents

Slow wave circuit structure for traveling-wave tube

Info

Publication number
JPH08102264A
JPH08102264A JP23725794A JP23725794A JPH08102264A JP H08102264 A JPH08102264 A JP H08102264A JP 23725794 A JP23725794 A JP 23725794A JP 23725794 A JP23725794 A JP 23725794A JP H08102264 A JPH08102264 A JP H08102264A
Authority
JP
Japan
Prior art keywords
slow
traveling
wave
circuit structure
cavities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23725794A
Other languages
Japanese (ja)
Inventor
Yutaka Tanaka
豊 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23725794A priority Critical patent/JPH08102264A/en
Publication of JPH08102264A publication Critical patent/JPH08102264A/en
Pending legal-status Critical Current

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  • Microwave Tubes (AREA)

Abstract

PURPOSE: To provide the slow are circuit structure for traveling-wave tube, which can obtain the gradual microwave absorbing characteristic and which can stabilize the amplifying operation characteristic. CONSTITUTION: This slow wave circuit structure for traveling-wave tube is formed by connecting plural cavities 1 and providing concentration type attenuators 6a, 6b in the cavities of a part of these plural cavities. Microwave absorbing films 7a, 7b are formed on the inner wall of at least one cavity in fore and aft of the attenuators or in the slow wave circuit structural member so as to achieve the described purpose.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は進行波管の遅波回路構
体に係り、特にその減衰器付近の改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a slow wave circuit structure of a traveling wave tube, and more particularly to an improvement in the vicinity of an attenuator thereof.

【0002】[0002]

【従来の技術】一般に、空胴結合型の進行波管は、電子
ビ−ムを放出する電子銃部,電子ビ−ムと電磁波を相互
作用させる遅波回路構体,相互作用の終った電子ビ−ム
を捕捉するコレクタ部が順次連結されてなっている。そ
して、遅波回路構体は、従来、図2に示すように構成さ
れ、複数の空胴1がフェル−ル2の結合孔3により結合
され、これら空胴1の外側に真空容器となるポ−ルピ−
ス4およびスペ−サ5が嵌合されている。更に、複数の
空胴1のうち一部の空胴1a、1b内に、主にSiCか
らなる集中型の減衰器6a、6bが設けられている。こ
の減衰器6a、6bは出力側からの電磁波の帰還を防
ぎ、発振を防止するために配設されている。
2. Description of the Related Art Generally, a cavity-coupled traveling-wave tube includes an electron gun section for emitting an electron beam, a slow-wave circuit structure for interacting the electron beam with an electromagnetic wave, and an electron beam after the interaction. -Collectors for capturing the frames are sequentially connected. The slow-wave circuit structure is conventionally constructed as shown in FIG. 2, in which a plurality of cavities 1 are coupled by a coupling hole 3 of a ferrule 2 and a port serving as a vacuum container is provided outside the cavities 1. Rupee
The spacer 4 and the spacer 5 are fitted together. Further, the centralized attenuators 6a and 6b mainly made of SiC are provided in some of the cavities 1a and 1b. The attenuators 6a and 6b are provided to prevent the return of electromagnetic waves from the output side and to prevent oscillation.

【0003】[0003]

【発明が解決しようとする課題】集中型の減衰器6a、
6bの両側に遅波回路がありマイクロ波の増幅に寄与し
ているが、上記のような従来の構造では、集中型の減衰
器の所で電気特性が急激に変化するため、最悪の場合、
変化点において発熱し、その結果、進行波管の特性が不
安定になる恐れがある。
The centralized attenuator 6a,
There is a slow wave circuit on both sides of 6b, which contributes to the amplification of microwaves. However, in the conventional structure as described above, the electric characteristics change rapidly at the centralized attenuator, so in the worst case,
Heat may be generated at the change point, and as a result, the characteristics of the traveling wave tube may become unstable.

【0004】この発明は、上記の点に鑑みてなされたも
ので、集中型減衰器の前後でなだらかなマイクロ波吸収
特性が得られ、進行波管の増幅動作特性を安定化させる
ことが出来る進行波管の遅波回路構体を提供することを
目的とする。
The present invention has been made in view of the above points, and a smooth microwave absorption characteristic can be obtained before and after the lumped attenuator, and the amplification operation characteristic of the traveling wave tube can be stabilized. An object is to provide a slow wave circuit structure of a wave tube.

【0005】[0005]

【課題を解決するための手段】この発明は、複数の空胴
が結合され、この複数の空胴のうち一部の空胴内に集中
型の減衰器が設けられてなり、更にこの減衰器の前後の
それぞれ少なくとも1個の空胴内壁又は遅波回路構成部
材に、マイクロ波吸収被膜が形成されてなる進行波管の
遅波回路構体である。
According to the present invention, a plurality of cavities are coupled, and a centralized attenuator is provided in a part of the cavities, and the attenuator is further provided. Is a slow-wave circuit structure of a traveling-wave tube in which a microwave absorption coating is formed on at least one cavity inner wall or slow-wave circuit constituent member before and after.

【0006】[0006]

【作用】この発明によれば、集中型減衰器の前後でなだ
らかなマイクロ波吸収特性が得られる結果、遅波回路の
途中での反射波発生が抑えられ、進行波管の増幅動作特
性を安定化させることが出来る。
According to the present invention, a smooth microwave absorption characteristic is obtained before and after the lumped attenuator, and as a result, generation of a reflected wave in the middle of the slow wave circuit is suppressed, and the amplification operation characteristic of the traveling wave tube is stabilized. Can be turned into.

【0007】[0007]

【実施例】以下、図面を参照して、この発明の一実施例
を詳細に説明する。この発明による空胴結合型の進行波
管の遅波回路構体は図1に示すように構成され、従来例
(図2)と同一箇所は同一符号を付すことにする。即
ち、結合孔3を有する複数のフェル−ル2を所定間隔で
軸方向に配置することにより、複数の空胴1が結合され
ている。これらの空胴1の外側には、磁性体のポ−ルピ
−ス4と非磁性体のスペ−サ5が1つおきに嵌合され、
これらは真空容器を兼用している。更に、複数の空胴1
のうち一部の空胴1a,1b内には集中型の減衰器6
a、6bが設けられている。そして、この集中型減衰器
6a、6bの前後の空胴1c、1d内壁に、それぞれマ
イクロ波吸収被膜例えばニッケルめっき被膜7a,7b
が形成されている。このマイクロ波吸収被膜の形成は、
空胴1内壁に限らず、他の遅波回路構成部材に形成して
も良い。各ポ−ルピ−ス4間には、磁石(図示せず)が
配設される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. The slow-wave circuit structure of the traveling-wave tube of the cavity coupling type according to the present invention is constructed as shown in FIG. 1, and the same parts as those in the conventional example (FIG. 2) are designated by the same reference numerals. That is, the plurality of cavities 1 are coupled by arranging the plurality of ferrules 2 having the coupling holes 3 at predetermined intervals in the axial direction. Outside of these cavities 1, a magnetic pole piece 4 and a non-magnetic spacer 5 are alternately fitted.
These also serve as vacuum vessels. Furthermore, a plurality of cavities 1
A centralized attenuator 6 is provided in some of the cavities 1a and 1b.
a and 6b are provided. Then, microwave absorbing coatings such as nickel plating coatings 7a and 7b are formed on the inner walls of the cavities 1c and 1d before and after the centralized attenuators 6a and 6b, respectively.
Are formed. The formation of this microwave absorption coating is
It may be formed not only on the inner wall of the cavity 1 but also on another slow wave circuit constituent member. A magnet (not shown) is arranged between the respective pole pieces 4.

【0008】このようにニッケルめっき被膜7a,7b
が形成された結果、この部分での電圧定在波比(VSW
R)を小さくすることが出来、反射を低減させることが
出来る。
Thus, the nickel plating films 7a, 7b
As a result, the voltage standing wave ratio (VSW
R) can be reduced and reflection can be reduced.

【0009】尚、上記実施例では、集中型の減衰器6
a、6bの両側の各1個の空胴内壁にニッケルめっき被
膜を形成したが、両側のそれぞれ複数個の空胴内壁に形
成しても良い。この場合、材料や厚さを変えることによ
り、マイクロ波吸収量およびその分布を異ならせても良
い。
In the above embodiment, the centralized attenuator 6 is used.
Although the nickel plating film is formed on each of the inner walls of the cavities on both sides of a and 6b, it may be formed on the plurality of inner walls of the cavities on both sides. In this case, the microwave absorption amount and its distribution may be changed by changing the material and the thickness.

【0010】又、フェル−ルが周期磁界装置のポ−ルピ
−スを兼ねる構造のものにも、この発明は適用出来る。
更に、空胴結合型の進行波管だけでなく、ヘリックス型
の進行波管にも適用出来る。
The present invention can also be applied to a structure in which the ferrule also serves as a pole piece of the periodic magnetic field device.
Further, it can be applied not only to a cavity-coupled traveling wave tube but also to a helix type traveling wave tube.

【0011】[0011]

【発明の効果】この発明によれば、集中型減衰器の前後
のそれぞれ少なくとも1個の空胴内壁又は遅波回路構成
部材に、マイクロ波吸収被膜が形成されているので、な
だらかなマイクロ波吸収特性が得られる。この結果、遅
波回路の途中での反射波発生が抑えられ、進行波管の増
幅動作特性を安定化させることが出来る。
According to the present invention, since the microwave absorbing coating is formed on at least one cavity inner wall or the slow wave circuit constituent member before and after the centralized attenuator, the gentle microwave absorption is achieved. The characteristics are obtained. As a result, generation of a reflected wave in the middle of the slow wave circuit is suppressed, and the amplification operation characteristic of the traveling wave tube can be stabilized.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例に係る進行波管の遅波回路
構体を示す概略断面図。
FIG. 1 is a schematic cross-sectional view showing a slow wave circuit structure of a traveling wave tube according to an embodiment of the present invention.

【図2】従来の進行波管の遅波回路構体を示す概略断面
図。
FIG. 2 is a schematic cross-sectional view showing a conventional slow wave circuit structure of a traveling wave tube.

【符号の説明】[Explanation of symbols]

1…空胴、2…フェル−ル、3…結合孔、4…ポ−ルピ
−ス、5…スペ−サ、6a、6b…減衰器、7a、7b
…ニッケルめっき被膜(マイクロ波吸収被膜)。
DESCRIPTION OF SYMBOLS 1 ... Cavity, 2 ... Feel, 3 ... Coupling hole, 4 ... Pol pace, 5 ... Spacer, 6a, 6b ... Attenuator, 7a, 7b
... Nickel plating film (microwave absorption film).

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 複数の空胴が結合され、該複数の空胴の
うち一部の空胴内に集中型の減衰器が設けられてなる進
行波管の遅波回路構体において、 上記減衰器の前後のそれぞれ少なくとも1個の空胴内壁
又は遅波回路構成部材に、マイクロ波吸収被膜が形成さ
れてなることを特徴とする進行波管の遅波回路構体。
1. A slow-wave circuit structure for a traveling-wave tube, comprising a plurality of cavities coupled to each other, and a centralized attenuator provided in a part of the cavities. 1. A slow-wave circuit structure for a traveling-wave tube, characterized in that a microwave absorption coating is formed on at least one cavity inner wall or a slow-wave circuit constituent member before and after the above.
JP23725794A 1994-09-30 1994-09-30 Slow wave circuit structure for traveling-wave tube Pending JPH08102264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23725794A JPH08102264A (en) 1994-09-30 1994-09-30 Slow wave circuit structure for traveling-wave tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23725794A JPH08102264A (en) 1994-09-30 1994-09-30 Slow wave circuit structure for traveling-wave tube

Publications (1)

Publication Number Publication Date
JPH08102264A true JPH08102264A (en) 1996-04-16

Family

ID=17012732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23725794A Pending JPH08102264A (en) 1994-09-30 1994-09-30 Slow wave circuit structure for traveling-wave tube

Country Status (1)

Country Link
JP (1) JPH08102264A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011523181A (en) * 2008-06-05 2011-08-04 イノシス,インコーポレーテッド Coupled cavity traveling wave tube

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011523181A (en) * 2008-06-05 2011-08-04 イノシス,インコーポレーテッド Coupled cavity traveling wave tube

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