JPH0798404A - Production of diffraction grating - Google Patents

Production of diffraction grating

Info

Publication number
JPH0798404A
JPH0798404A JP21551393A JP21551393A JPH0798404A JP H0798404 A JPH0798404 A JP H0798404A JP 21551393 A JP21551393 A JP 21551393A JP 21551393 A JP21551393 A JP 21551393A JP H0798404 A JPH0798404 A JP H0798404A
Authority
JP
Japan
Prior art keywords
diffraction grating
resist
optical crystal
nonlinear optical
antireflection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21551393A
Other languages
Japanese (ja)
Inventor
Hisako Hara
比佐子 原
Kazuhisa Yamamoto
和久 山本
Kiminori Mizuuchi
公典 水内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21551393A priority Critical patent/JPH0798404A/en
Publication of JPH0798404A publication Critical patent/JPH0798404A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12107Grating

Landscapes

  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

PURPOSE:To provide the process for production capable of producing the excellent diffraction grating by forming deep and uniform interference fringes on a resist. CONSTITUTION:An antireflection film 13 is formed on nonlinear optical crystal LiTaO3 11 and a resist 12 is applied thereto from above. A black liquid or black solid 14 is applied to the rear surface of the LiTaO3, after prebaking and the LiTaO3 is fixed to a sample base. The resist is then exposed by interference exposing using an He-Cd laser 15. The resist is thereafter developed and is rinsed with pure water. The diffraction grating 2a is obtd. on the resist if the resist is subjected to post baking in the final.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光情報処理分野、あるい
は光応用計測制御分野に使用する回折格子の製造方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a diffraction grating used in the field of optical information processing or the field of optical measurement and control.

【0002】[0002]

【従来の技術】近年、回折格子は結合器,偏向器,分波
器,反射器,波長フィルタ,モ−ド変換器等、種種の受
動素子として広く用いられ、また光波制御用の機能素子
にも応用できる事から、光集積回路構成上の最も重要な
要素の一つである。
2. Description of the Related Art Recently, diffraction gratings have been widely used as passive elements of various kinds such as couplers, deflectors, demultiplexers, reflectors, wavelength filters, mode converters, etc., and also as functional elements for controlling light waves. Is also one of the most important factors in optical integrated circuit configuration.

【0003】以下に従来の回折格子の製造方法について
説明する。図3は従来の回折格子の製造方法の工程を示
すものである。
A conventional method of manufacturing a diffraction grating will be described below. FIG. 3 shows steps of a conventional method of manufacturing a diffraction grating.

【0004】同図(a)で非線形光学結晶であるLiT
aO3 基板31にレジスト32をスピンナ−で0.2μ
mの厚さに塗布する。ここで用いたレジストはシプレ−
社製のAZ1400である。次に90℃で,20分間プ
リベ−クした後,同図(b)でHe−Cdレ−ザ−33
(λ=441.6nm)を用いた干渉露光法により、露
光する。(露光量45mJ/cm2、θ=33.5゜)
次に現像液(シプレ−社製MF312:水=1:1)で
5秒間現像し、純水で1分間リンスした後ポストベ−ク
を90℃で、25分間行うと、同図(c)となり、レジ
スト上に回折格子32aが出来上がる。大きさとして2
0mmの範囲で回折効率10%±1%であった。
In FIG. 1A, LiT, which is a nonlinear optical crystal, is used.
The resist 32 is spin coated on the aO 3 substrate 31 to 0.2 μm.
Apply to a thickness of m. The resist used here is
AZ1400 manufactured by the company. Next, after prebaking at 90 ° C. for 20 minutes, the He-Cd laser 33 shown in FIG.
Exposure is performed by the interference exposure method using (λ = 441.6 nm). (Exposure amount 45 mJ / cm 2 , θ = 33.5 °)
Next, after developing with a developing solution (MF312: water = 1: 1) manufactured by Shipley Co., Ltd. for 5 seconds and rinsing with pure water for 1 minute, post baking is performed at 90 ° C. for 25 minutes, the result is as shown in FIG. The diffraction grating 32a is completed on the resist. 2 as size
The diffraction efficiency was 10% ± 1% in the range of 0 mm.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記の従
来の構成では、図4に示すように、LiTaO3 基板4
1の表面反射44と、裏面反射45(ここで言う裏面と
は、非線形光学結晶41に光が入射する側と反対側の面
41a。)が起こるので、レジスト上の干渉縞にムラが
でき、深く、均一な干渉縞が形成されないという問題点
を有していた。
[0005] However, in the conventional configuration described above, as shown in FIG. 4, LiTaO 3 substrate 4
1 surface reflection 44 and back surface reflection 45 (the back surface referred to here is the surface 41a opposite to the side on which light is incident on the nonlinear optical crystal 41). Therefore, the interference fringes on the resist are uneven, There was a problem that deep and uniform interference fringes were not formed.

【0006】本発明は上記従来の問題点を解決するもの
で、新たな工夫を加える事により、深く、均一な干渉縞
をレジスト上に形成することを目的とするものである。
The present invention solves the above-mentioned conventional problems, and an object thereof is to form deep and uniform interference fringes on a resist by adding new measures.

【0007】[0007]

【課題を解決するための手段】この目的を達成するため
に本発明の回折格子の製造方法は、レジストを塗布する
前に非線形光学結晶上に反射防止膜を形成する工程、ま
たは、非線形光学結晶の裏面をすりガラス状とし、前記
非線形光学結晶の裏面に黒色液体または黒色固体を塗布
するという工程を有している。
In order to achieve this object, a method of manufacturing a diffraction grating of the present invention comprises a step of forming an antireflection film on a nonlinear optical crystal before coating a resist, or a nonlinear optical crystal. Of the non-linear optical crystal is coated with black liquid or black solid.

【0008】[0008]

【作用】本発明は上記の方法により、非線形光学結晶表
面上の反射光と、反射防止膜表面上の反射光の反射率を
等しくし、反射防止膜の膜厚を1/4波長とすること
で、二つの反射光が互いに打ち消しあうため、表面での
反射を防止できる。
According to the present invention, the reflectance of the reflected light on the surface of the nonlinear optical crystal is made equal to the reflectance of the reflected light on the surface of the antireflection film by the above method, and the film thickness of the antireflection film is set to 1/4 wavelength. Thus, the two reflected lights cancel each other out, so that reflection on the surface can be prevented.

【0009】また、本発明によれば、黒色液体または黒
色固体が非線形光学結晶 基板の裏面からの反射光を吸
収するため、裏面反射を防ぐことができる。このためレ
ジスト上に深く、均一な干渉縞を形成することができ
る。
Further, according to the present invention, since the black liquid or the black solid absorbs the reflected light from the back surface of the nonlinear optical crystal substrate, back surface reflection can be prevented. Therefore, deep and uniform interference fringes can be formed on the resist.

【0010】[0010]

【実施例】【Example】

(実施例1)以下本発明の実施例1について図面を参照
しながら説明する。図1は本発明の実施例1を示す回折
格子の製造方法の工程図である。
(Embodiment 1) Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. First Embodiment FIG. 1 is a process diagram of a method of manufacturing a diffraction grating showing a first embodiment of the present invention.

【0011】非線形光学結晶11の裏面11aは前にも
述べたように裏面反射が抑えられるように研磨してすり
ガラス状にしておく。
The back surface 11a of the nonlinear optical crystal 11 is ground so as to suppress back surface reflection and has a ground glass shape as described above.

【0012】次に図1(a)においてLiTaO3 基板
11上に反射防止膜13を0.06μmの厚さに蒸着す
る。反射防止膜の原理は、図5に示してある。非線形光
学結晶51と反射防止膜52の反射率R1,R2を等しく
し、反射防止膜52の膜厚を1/4波長とすることで反
射光51aと52aが互いに打ち消し合い、反射を防
ぐ。非線形光学結晶51、反射防止膜52、レジスト5
3、の屈折率をそれぞれn1、n2、n3とすると、(式
1)、(式2)、(式3)のような関係式が得られる。
Next, in FIG. 1A, an antireflection film 13 is vapor-deposited to a thickness of 0.06 μm on the LiTaO 3 substrate 11. The principle of the antireflection film is shown in FIG. By setting the reflectances R 1 and R 2 of the nonlinear optical crystal 51 and the antireflection film 52 to be equal and setting the film thickness of the antireflection film 52 to ¼ wavelength, the reflected lights 51a and 52a cancel each other and prevent reflection. . Nonlinear optical crystal 51, antireflection film 52, resist 5
When the refractive indices of 3 and 3 are n 1 , n 2 and n 3 , respectively, relational expressions such as (Expression 1), (Expression 2) and (Expression 3) are obtained.

【0013】 R1= (n2 2−n1 2)/(n2 2+n1 2) …(式1) R2= (n3 2−n2 2)/(n3 2+n2 2) …(式2) n2l=λ/4 …(式3) n1=2.2、n3=1.5とし、(式1)=(式2)と
すると、n2=1.82となる。これに近い値としてA
23の屈折率1.7を(式3)に代入すると、l=
0.06μmとなる。次に図1(b)では反射防止膜1
3の上に、スピンナ−でレジスト12を0.2μmの厚
さに塗布する。その後90℃で、20分間プリベ−クし
た後、黒色液体である活性炭を水に溶いたもの14を基
板の裏面11aに塗布し、サンプル台に固定する。
(c)では、He−Cdレ−ザ−15(λ=441.6
nm)で干渉露光法により露光する。(露光量45mJ
/cm2、交差角θ=33.5゜)(d)では、現像液
(MF312:水=1:1)で5秒間現像し、純水で1
分間リンスする。その後ポストベ−クを90℃で、25
分間行う。このようにして深さ0.1μm、周期0.4
μmの回折格子12aができる。大きさとして20mm
の範囲で回折効率30%±1%の均一な効率が得られ
た。
R 1 = (n 2 2 −n 1 2 ) / (n 2 2 + n 1 2 ) (Equation 1) R 2 = (n 3 2 −n 2 2 ) / (n 3 2 + n 2 2 ) (Equation 2) n 2 l = λ / 4 (Equation 3) If n 1 = 2.2 and n 3 = 1.5 and (Equation 1) = (Equation 2), then n 2 = 1.82 Becomes A close to this
Substituting the refractive index 1.7 of l 2 O 3 into (Equation 3), l =
It becomes 0.06 μm. Next, in FIG. 1B, the antireflection film 1
A resist 12 is applied on the surface of the No. 3 by a spinner to a thickness of 0.2 μm. Then, after prebaking at 90 ° C. for 20 minutes, activated carbon, which is a black liquid, dissolved in water 14 is applied to the back surface 11a of the substrate and fixed to the sample table.
In (c), He-Cd laser-15 (λ = 441.6
exposure) by the interference exposure method. (Exposure amount 45 mJ
/ Cm 2 , crossing angle θ = 33.5 °) (d), development with a developer (MF312: water = 1: 1) was performed for 5 seconds, and pure water was used to
Rinse for a minute. After that, post bake at 90 ° C for 25
Do for a minute. In this way, the depth is 0.1 μm and the period is 0.4.
A μm diffraction grating 12a is formed. 20mm as size
A uniform efficiency of 30% ± 1% was obtained in the range of.

【0014】このように本実施例による回折格子の製造
方法はレジスト上に深く、均一な干渉縞を得る点で優れ
た効果が得られる。
As described above, the method of manufacturing the diffraction grating according to the present embodiment has an excellent effect in obtaining deep and uniform interference fringes on the resist.

【0015】以上のように本実施例によれば、レジスト
を塗布する前に反射防止膜を形成する事で、LiTaO
3上表面の反射を防ぎ、また、LiTaO3裏面をすりガ
ラスとし、黒色液体を塗布したことで裏面の反射も防
ぎ、深く、均一な干渉縞を形成することができ、いたっ
て簡単に0.4μmの回折格子を製造することができ
る。さらにレジスト上の回折格子を反射防止膜上に転写
すれば、硬い回折格子を製造することができ、保存しや
すくなる。
As described above, according to this embodiment, the LiTaO film is formed by forming the antireflection film before applying the resist.
3 Prevents reflection on the top surface, and also uses LiTaO 3 back surface as frosted glass and black liquid applied to prevent reflection on the back surface to form deep and uniform interference fringes. Can be manufactured. Furthermore, if the diffraction grating on the resist is transferred onto the antireflection film, a hard diffraction grating can be manufactured and storage becomes easy.

【0016】なお、非線形光学結晶上に反射防止膜を形
成するのみ、または非線形光学結晶の裏面をすりガラス
状とし、前記裏面に黒色液体または固体を塗布するのみ
でも回折格子を製造することができる。
The diffraction grating can be manufactured only by forming an antireflection film on the nonlinear optical crystal, or by forming the back surface of the nonlinear optical crystal into a frosted glass shape and coating the back surface with a black liquid or a solid.

【0017】(実施例2)以下本発明の実施例2につい
て図面を参照しながら説明する。図2は本発明の実施例
2を示す回折格子の製造方法の工程図である。
(Second Embodiment) A second embodiment of the present invention will be described below with reference to the drawings. Second Embodiment FIG. 2 is a process diagram of a method of manufacturing a diffraction grating showing a second embodiment of the present invention.

【0018】まず、(a)で非線形光学結晶であるLi
TaO321上に反射防止膜であるAl2323を(式
3)より0.05μm塗布する。次に(b)ではレジス
ト22を前記Al2323上にスピンナ−で0.2μm
塗布する。その後90℃で、20分間プリベ−クした
後、LiTaO321の裏面21aに有機物である2−
Methyl−4−nitroaniline(MN
A)24をスピンコ−トする。MNAは紫外線を吸収す
るため紫外線に対して黒色固体として作用する。そして
Arレ−ザ−25(λ=365nm、交差角θ=65.
8゜)で干渉露光法により、露光する。(d)では、現
像液(MF312:水=1:1)で現像し、純水で1分
間リンスし、その後ポストベ−クを90℃で、25分間
行う。このようにして、深さ0.1μm、周期0.2μ
mの回折格子22aができあがる。このようにレ−ザ−
の波長と交差角θをかえることで、0.2μm周期の回
折格子も実施例1と同様いたって簡単に製造することが
できる。
First, in (a), a non-linear optical crystal, Li, is used.
An Al 2 O 3 film 23, which is an antireflection film, is applied onto TaO 3 film 21 by 0.05 μm according to (formula 3). Next, in (b), the resist 22 is spin-coated on the Al 2 O 3 23 by 0.2 μm.
Apply. Then, after prebaking at 90 ° C. for 20 minutes, the back surface 21a of LiTaO 3 21 has an organic substance of 2-
Methyl-4-nitroaniline (MN
A) Spin coat 24. Since MNA absorbs ultraviolet rays, it acts as a black solid against ultraviolet rays. And Ar laser-25 (λ = 365 nm, crossing angle θ = 65.
Exposure is performed by the interference exposure method at 8 °). In (d), it is developed with a developer (MF312: water = 1: 1), rinsed with pure water for 1 minute, and then post-baked at 90 ° C. for 25 minutes. In this way, the depth is 0.1 μm and the cycle is 0.2 μm.
The diffraction grating 22a of m is completed. Like this
By changing the wavelength and the crossing angle θ, a diffraction grating with a 0.2 μm period can be easily manufactured as in the first embodiment.

【0019】(実施例3)以下本発明の実施例3につい
て説明する。回折格子の製造方法は実施例1と同様であ
る。本実施例ではLiTaO3 基板のかわりに屈折率が
ほぼ同じであるLiNbO3 基板を用いた。このように
して得られる回折格子も実施例1と同様、深さ0.1μ
m、周期0.4μmであり、LiNbO3でも簡単に回
折格子を作ることができる。
(Third Embodiment) A third embodiment of the present invention will be described below. The method of manufacturing the diffraction grating is the same as in the first embodiment. In the present example, a LiNbO 3 substrate having almost the same refractive index was used instead of the LiTaO 3 substrate. The diffraction grating thus obtained has a depth of 0.1 μm as in the first embodiment.
m, the period is 0.4 μm, and a diffraction grating can be easily formed with LiNbO 3 .

【0020】なお、反射防止膜としてAl23 を用い
たが、Fe23、Zn、Biでも同様の効果を発揮す
る。
Although Al 2 O 3 was used as the antireflection film, Fe 2 O 3 , Zn, and Bi also exhibit the same effect.

【0021】なお、黒色液体として活性炭を溶いたも
の、または黒色固体としてMNAを用いたが、黒色アル
マイトでも同様の効果を発揮する。その他レ−ザ−光を
吸収する物質であれば、利用することができる。
Although activated carbon is dissolved as the black liquid or MNA is used as the black solid, the same effect can be obtained with black alumite. Any other substance that absorbs laser light can be used.

【0022】[0022]

【発明の効果】以上のように本発明の回折格子の製造方
法によれば、非線形光学結晶にレジストを塗布する前に
反射防止膜を形成する工程または、非線形光学結晶の裏
面をすりガラス状とし、黒色液体または黒色固体を塗布
することにより、非線形光学結晶上の表面反射と、非線
形光学結晶の裏面反射とを抑え、レジスト上に深く、均
一な干渉縞を簡単に形成することができ、優れた回折格
子の製造を実現するものである。
As described above, according to the method for manufacturing a diffraction grating of the present invention, the step of forming an antireflection film before applying a resist to a nonlinear optical crystal or the back surface of the nonlinear optical crystal is made into a frosted glass, By applying a black liquid or a black solid, the surface reflection on the nonlinear optical crystal and the back surface reflection of the nonlinear optical crystal can be suppressed, and deep and uniform interference fringes can be easily formed on the resist, which is excellent. It realizes the manufacture of a diffraction grating.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1における回折格子の製造方法
の工程断面図
FIG. 1 is a process cross-sectional view of a method for manufacturing a diffraction grating in a first embodiment of the present invention.

【図2】本発明の実施例2における回折格子の製造方法
の工程断面図
FIG. 2 is a process cross-sectional view of a method for manufacturing a diffraction grating in a second embodiment of the present invention.

【図3】従来例の回折格子の製造方法の工程断面図FIG. 3 is a process sectional view of a method of manufacturing a diffraction grating of a conventional example.

【図4】従来例の課題を示す図FIG. 4 is a diagram showing a problem of a conventional example.

【図5】反射防止膜の原理を示す図FIG. 5 is a diagram showing the principle of an antireflection film.

【符号の説明】[Explanation of symbols]

11 非線形光学結晶LiTaO3 11a LiTaO3の裏面 12 レジスト 12a 回折格子 13 反射防止膜Al23 14 活性炭 15 He−Cdレ−ザ 21 非線形光学結晶 LiTaO3 21a LiTaO3の裏面 22 レジスト 22a 回折格子 23 反射防止膜Al23 24 MNA 25 Arレ−ザ 31 非線形光学結晶LiTaO3 32 レジスト 32a 回折格子 33 He−Cdレ−ザ 41 LiTaO3 41a LiTaO3の裏面 42 レジスト 43 入射光 44 表面の反射 45 裏面の反射 51 非線形光学結晶 51a 非線形光学結晶の反射光 52 反射防止膜 52a 反射防止膜の反射光 53 レジスト11 Nonlinear Optical Crystal LiTaO 3 11a Backside of LiTaO 3 12 Resist 12a Diffraction Grating 13 Antireflection Film Al 2 O 3 14 Activated Carbon 15 He-Cd Laser 21 Nonlinear Optical Crystal LiTaO 3 21a LiTaO 3 Backside 22 Resist 22a Diffraction Grating 23 Antireflection film Al 2 O 3 24 MNA 25 Ar laser 31 Non-linear optical crystal LiTaO 3 32 Resist 32a Diffraction grating 33 He-Cd laser 41 LiTaO 3 41a LiTaO 3 back surface 42 Resist 43 Incident light 44 Surface reflection 45 Backside reflection 51 Non-linear optical crystal 51a Non-linear optical crystal reflected light 52 Anti-reflection film 52a Anti-reflection film reflected light 53 Resist

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】非線形光学結晶上に反射防止膜を形成する
工程と、前記反射防止膜上にレジストを塗布する工程
と、レ−ザ−光を用いた干渉露光と、現像を行い回折格
子を形成する工程とを含むことを特徴とする回折格子の
製造方法。
1. A step of forming an antireflection film on a nonlinear optical crystal, a step of applying a resist on the antireflection film, an interference exposure using laser light, and a development to form a diffraction grating. And a step of forming the diffraction grating.
【請求項2】非線形光学結晶の裏面をすりガラス状とす
る工程と,前記非線形光学結晶の裏面にレ−ザ−光を吸
収するための黒色液体または黒色固体を塗布する工程
と、非線形光学結晶上にレジストを塗布する工程と、レ
−ザ−光を用いた干渉露光と、現像を行い回折格子を形
成する工程とを含むことを特徴とする回折格子の製造方
法。
2. A step of forming the back surface of the nonlinear optical crystal into a frosted glass shape, a step of applying a black liquid or a black solid for absorbing laser light to the back surface of the nonlinear optical crystal, and A method of manufacturing a diffraction grating, comprising: a step of applying a resist on the substrate; an interference exposure using a laser beam; and a step of developing to form a diffraction grating.
【請求項3】非線形光学結晶が、LiNbXTa1-X3
(0≦X≦1)であることを特徴とする請求項1または
2記載の回折格子の製造方法。
3. The nonlinear optical crystal is LiNb X Ta 1-X O 3
The method of manufacturing a diffraction grating according to claim 1 or 2, wherein (0 ≦ X ≦ 1).
【請求項4】反射防止膜がAl23 であることを特徴
とする請求項1記載の回折格子の製造方法。
4. The method of manufacturing a diffraction grating according to claim 1, wherein the antireflection film is Al 2 O 3 .
【請求項5】黒色液体または黒色固体が活性炭であるこ
とを特徴とする請求項2記載の回折格子の製造方法。
5. The method for producing a diffraction grating according to claim 2, wherein the black liquid or the black solid is activated carbon.
JP21551393A 1993-08-02 1993-08-31 Production of diffraction grating Pending JPH0798404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21551393A JPH0798404A (en) 1993-08-02 1993-08-31 Production of diffraction grating

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5-191084 1993-08-02
JP19108493 1993-08-02
JP21551393A JPH0798404A (en) 1993-08-02 1993-08-31 Production of diffraction grating

Publications (1)

Publication Number Publication Date
JPH0798404A true JPH0798404A (en) 1995-04-11

Family

ID=26506486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21551393A Pending JPH0798404A (en) 1993-08-02 1993-08-31 Production of diffraction grating

Country Status (1)

Country Link
JP (1) JPH0798404A (en)

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EP1070974A1 (en) * 1999-07-21 2001-01-24 SA Highwave Optical Technologies Apodization process of photoinscripted Bragg graring
EP1070973A1 (en) * 1999-07-21 2001-01-24 Highwave Optical Technologies S.A. Optical waveguide with improved photoinscription
JP2002169010A (en) * 2000-12-04 2002-06-14 Minolta Co Ltd Diffraction optical element
JP2008107566A (en) * 2006-10-25 2008-05-08 Shimadzu Corp Manufacturing method of diffraction grating
JP2010066296A (en) * 2008-09-08 2010-03-25 Nitto Denko Corp Method for manufacturing light diffusion film, light diffusion film, polarizing plate and liquid crystal display apparatus
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1070974A1 (en) * 1999-07-21 2001-01-24 SA Highwave Optical Technologies Apodization process of photoinscripted Bragg graring
EP1070973A1 (en) * 1999-07-21 2001-01-24 Highwave Optical Technologies S.A. Optical waveguide with improved photoinscription
FR2796728A1 (en) * 1999-07-21 2001-01-26 France Telecom PHOTO-WRITTEN BRAGG NETWORK PROCESSING PROCESS
FR2796727A1 (en) * 1999-07-21 2001-01-26 France Telecom OPTICAL GUIDE FOR ENHANCED PHOTO-REGISTRATION
US6574395B1 (en) 1999-07-21 2003-06-03 Sa Highwave Optical Technologies Photowritten Bragg grating apodization method
JP2002169010A (en) * 2000-12-04 2002-06-14 Minolta Co Ltd Diffraction optical element
JP2008107566A (en) * 2006-10-25 2008-05-08 Shimadzu Corp Manufacturing method of diffraction grating
JP4650390B2 (en) * 2006-10-25 2011-03-16 株式会社島津製作所 Diffraction grating manufacturing method
JP2010066296A (en) * 2008-09-08 2010-03-25 Nitto Denko Corp Method for manufacturing light diffusion film, light diffusion film, polarizing plate and liquid crystal display apparatus
US8693100B2 (en) 2008-09-08 2014-04-08 Nitto Denko Corporation Method of manufacturing light diffusion film, light diffusion film, polarizing plate, and liquid crystal display
WO2012157697A1 (en) * 2011-05-19 2012-11-22 株式会社日立製作所 Diffraction grating manufacturing method, spectrophotometer, and semiconductor device manufacturing method
CN103688198A (en) * 2011-05-19 2014-03-26 株式会社日立高新技术 Diffraction grating manufacturing method, spectrophotometer, and semiconductor device manufacturing method
JPWO2012157697A1 (en) * 2011-05-19 2014-07-31 株式会社日立ハイテクノロジーズ Diffraction grating manufacturing method, spectrophotometer, and semiconductor device manufacturing method
GB2581251A (en) * 2018-12-12 2020-08-12 Oz Optics Ltd A broadband THz receiver using thick patterned semiconductor crystals

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