JPH0794124A - Display device - Google Patents

Abstract

PURPOSE:To provide a diode type display structure small in size, of low power and easy for manufacturing in a display device having a field emission negative electrode. CONSTITUTION:A number of negative electrode tips 10a are formed on a main surface of a substrate 10 and a positive electrode layer 18 is formed so as to surround those tips, while a phosphor layer 20 is formed on the positive electrode layer 18. A transparent plate 16 is provided on the main surface of the substrate 10 via spacers 22 in order to vacuum-seal the negative electrode tips 10a, the positive electrode layer 18, the phosphor layer 20 and the like. When a specified voltage is applied by a power source VA across the negative electrode tips 10a and the positive electrode layer 18, electrons are emitted by an electric field from the negative electrode tips 10a. Emitted electrons are attracted by the positive electrode layer 18 to collide against the phosphor layer 20 to make it emit light.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device having a field emission cathode, and more particularly, a small-sized and low-power easy-to-manufacture bipolar tube by disposing an anode having a phosphor layer deposited on the substrate in the vicinity of the cathode. This is a type display structure.

[0002]

2. Description of the Related Art Conventionally, as a display device having a field emission cathode, one having a triode type display structure as shown in FIGS. 55 and 56 is known (for the device of FIG. 55, "electronic material" 1991). January issue, page 35 or the 40th Joint Lecture on Applied Physics, Proceedings No.2, page 526, 29a-SZ
See E-17, etc., for the device of FIG.
46636 gazette etc.).

In FIG. 55, an insulating film 12 is formed on one main surface of a substrate 10 made of, for example, a semiconductor, and a plurality of holes in the insulating film 12 are respectively provided with cathode chips 10a as field emission electron sources. Has been formed. Normal,
About 100 cathode chips 10a are provided per pixel,
It is designed to reduce current fluctuations and characteristic variations for each chip. A gate electrode layer 14 is provided on the insulating film 12, and a hole is formed in a portion of the gate electrode layer 14 facing the cathode chip 10a.

The transparent plate 16 is provided on one main surface of the substrate 10 via a spacer 22 for vacuum-sealing the cathode chip 10a, and the surface of the transparent plate 16 facing the substrate 10 has an anode layer. 18 is formed and the anode layer 1 is formed.
A fluorescent material layer 20 is formed so as to cover 8.

A relatively low voltage (eg, 100 V) is applied between the gate electrode layer 14 and the cathode chip 10a by the power source V _G.
[V]) is applied, the tip of the cathode chip 10a is sharp and the distance to the gate electrode layer 14 is short, and thus the action of an electric field causes electrons to be emitted from the cathode chip 10a into a vacuum. In this case, the anode layer 18 and the cathode chip 1
Relatively high voltage by a power source V _A between 0a (e.g. 2
00 [V]) is applied, the electrons emitted from the cathode chip 10a are attracted to a positive potential and collide with the fluorescent material layer 20 to cause it to emit light.

In the case of constructing an image display device, a large number of cathode lines and a large number of anode lines are arranged in a matrix, and a pixel including a large number of cathode chips as shown in FIG. 55 is arranged at each intersection of the matrix. It is customary to form a so-called dot matrix type display structure by configuring.

In FIG. 56, an insulating film 34 is formed on one main surface of a substrate 10 made of, for example, an insulator via a cathode wiring layer 32, and wiring is formed on the insulating film 34 via a connection hole. A cathode layer 36 is formed so as to connect to the layer 32. The cathode layer 36 has a large number of protrusions formed on both sides thereof as shown in FIG. A gate electrode layer 38 is provided on the insulating film 34 so as to surround the cathode layer 36.
A recess is formed between 6 and the gate electrode layer 38.

A transparent plate 16 having an anode layer 18 and a fluorescent material layer 20 is provided on one main surface side of the substrate 10 in the same manner as described with reference to FIG. 55, and a space between the substrate 10 and the transparent plate 16 is maintained in vacuum. is doing.

The display device shown in FIGS. 56 and 57 differs from the device shown in FIG. 55 in that the cathode is sharpened in the horizontal direction instead of the vertical direction. When a predetermined voltage is applied between the gate electrode layer 38 and the cathode layer 36 by the power source V _G, the electrons emitted from the cathode layer 36 are irradiated to emit secondary electrons from the gate electrode layer 38 as indicated by a dashed arrow. To be done. At this time, if a relatively high voltage is applied between the anode layer 18 and the cathode layer 36 by the power supply V _A , the emitted secondary electrons are attracted to a positive potential and collide with the fluorescent material layer 20. And make it emit light.

[0010]

According to the above-mentioned conventional display device, two power supplies V _A and V _G are required, and the voltage of the power supply V _A has a gate-anode spacing of several tens.
Since [μm] or more is required, in order to emit electrons from the cathode chip or the cathode layer, it is necessary to set the voltage considerably higher than the power source V _G. Further, since the structure is such that the light emitting surface of the fluorescent material layer 20 is observed from the opposite side through the layer 20, there is a large decrease in brightness. To compensate for such a decrease in brightness, the power supply V _A
It is necessary to set the voltage at a certain level high. Therefore, it is difficult to achieve low voltage and low power.

In addition, the electrons emitted from the cathode chip 10a or the gate electrode layer 38 may spread in a vacuum before reaching the fluorescent material layer 20 and interfere with adjacent pixels. Must be large enough to prevent interference. Therefore, it is difficult to achieve miniaturization and high definition of the display surface.

Further, it is necessary to accurately adjust the distance between the substrate 10 and the transparent plate 16 by using the spacer 22. In particular, when three types of fluorescent materials R, G, and B are prepared for full colorization, it is necessary to precisely adjust the distance between the substrate 10 and the transparent plate 16. Therefore, it is difficult to manufacture the display device with high yield.

An object of the present invention is to provide a novel display device having a small-sized, low-power and easy-to-manufacture bipolar display structure.

[0014]

A display device according to the present invention includes a substrate, a cathode formed on one main surface of the substrate, capable of emitting electrons by an electric field, and one of the substrates. An anode provided in the vicinity of the main surface of the cathode to apply an electric field to the cathode, a fluorescent material layer formed on the anode, and a sealing for vacuum-sealing the cathode, the anode, and the fluorescent material layer. And a structure configured such that the fluorescent material layer can be seen through toward one main surface of the substrate.

[0015]

According to the structure of the present invention, when a predetermined voltage is applied between the anode and the cathode, electrons are emitted from the cathode by the electric field. Then, the emitted electrons are attracted to the anode,
It collides with the fluorescent material layer on the anode and causes it to emit light.

[0016]

FIG. 1 shows a display device according to an embodiment of the present invention.

An insulating film 12 such as SiO ₂ is formed on one main surface of a substrate 10 made of a semiconductor such as Si, and a plurality of holes 21 in the insulating film 12 serve as field emission electron sources. The cathode chip 10a is formed in a plane arrangement as shown in FIG. The cathode chip 10a may have a conical shape or a polygonal pyramid shape such as a triangular pyramid or a quadrangular pyramid as long as it has a sharp vertex. Cathode chip 10a
About 100 can be provided per pixel. An anode layer 18 is laminated on the insulating film 12.
Openings are formed in the anode layer 18 in the vicinity of each cathode chip 10a so as to surround the cathode chip 10a. A fluorescent material layer 20 is laminated on the anode layer 18. Further, in the fluorescent material layer 20, an opening portion is formed near the cathode chip 10a so as to surround the cathode chip 10a.

The transparent plate 16 is provided on one main surface of the substrate 10 via a spacer 22 for vacuum-sealing the cathode chip 10a, the fluorescent material layer 20 and the anode layer portion thereunder. Since the transparent plate 16 is not provided with an electrode, a fluorescent material layer, or the like on the surface facing the substrate 10, the substrate 10
On the other hand, when the transparent plate 16 is mounted, high precision is not required for the space adjustment.

As an example, the distance S between the cathode chips 10a is
Is 7.5 [μm], and the opening diameter d of the hole 21 is 4 [μm].
m] and the thickness t of the fluorescent material layer 20 can be set to 1 [μm]. Therefore, the distance between the fluorescent material layer 20 and the cathode chip 10a is approximately 2 [μm], which is approximately equal to the opening radius. The fluorescent material layer 20 may be made thick so as to obtain a desired luminous efficiency.

When a predetermined voltage is applied between the anode layer 18 and the cathode chip 10a by the power supply V _A, electrons are emitted from the cathode chip 10a as indicated by the broken line arrow. Then, the emitted electrons are attracted to the anode layer portion in the vicinity of the cathode chip, collide with the fluorescent material layer 20 thereon, and cause it to emit light.

FIG. 3 shows an example of the anode voltage-anode current characteristics in the above display device. According to FIG. 3, it can be seen that the electron emission can be controlled on / off by controlling the anode voltage.

The following Table 1 shows emission characteristics of various fluorescent materials, and FIG. 4 shows acceleration voltage-luminance characteristics of various fluorescent materials.

[0023]

[Table 1] According to Table 1 and FIG. 4, various fluorescent materials except blue are 50
It can be seen that practical brightness is exhibited at about [V]. Therefore, by depositing the fluorescent material layer 20 on the anode layer 18, it is possible to easily emit light by the emitted electrons.

The display device shown in FIG. 1 has a bipolar structure, so that the structure is simple and no counter electrode is required, and therefore the display device is easy to manufacture. Moreover, since only one power supply is required and a relatively low voltage is sufficient, low power consumption can be achieved. Furthermore, since the probability that electrons fly to the next pixel is very small, it is possible to achieve high definition with the accuracy of the photolithography technique. Furthermore, from the transparent plate 16 side, the layer 2 is formed without interposing the fluorescent material layer 20.
Since it is possible to see through the light emitting surface of 0, there is little decrease in brightness, and a bright screen can be realized even at a low voltage.

FIG. 5 shows an example of constructing a dot matrix type image display device by using the bipolar tube type display structure as shown in FIG.

On the substrate 10, a large number n of data lines D _{1 to} D _n and a large number m of scanning lines S _{1 to} S _m are arranged in a matrix, and each intersection of the matrix is shown in FIG. A pixel PE including about 100 cathode chips as shown is formed. The data lines D _{1 to} D _n correspond to the anode layer 18 of FIG. 1, and the scanning lines S _{1 to} S _m correspond to the cathode wiring layer connected to the cathode chip 10a of FIG.

In the device of FIG. 1, the conductivity type determining impurities are selectively diffused on the surface of the semiconductor substrate 10 to form an impurity diffusion region so as to define a PN junction J with the substrate 10, and the impurity diffusion region is formed. The region can be used as a cathode wiring layer. In this case, between the cathode wiring layers (scan lines),
It is electrically isolated by the PN junction which is biased in the reverse direction.

In the device of FIG. 5, in order to cause the desired pixel PE to emit light, a predetermined voltage is _supplied by the power supply V _A between the data line (eg D ₁ ) and the scan line (eg S ₁ ) associated with the pixel. Should be applied.

[0029] FIG. 6 shows a driving circuit of the apparatus of FIG. 5, in this circuit, with D ₁ to D _n data lines of is switched to the potential V ₀ which or V _0/3 by the switch element P, each scan line of S ₁ to S _m is adapted to be switched to a potential 2V _0/3 or the ground potential by the switch element Q. Here, the potential V ₀ corresponds to a predetermined voltage higher than the threshold voltage at which the current starts rising in the voltage-current characteristics as shown in FIG.

In displaying an image, scanning lines S ₁ to
Scanning is performed by sequentially and repeatedly switching S _m from left to right to the ground potential, and in synchronization with such scanning, the data lines D _{1 to} D _n are associated with the pixels to emit light. One is a potential V ₀ and the other is a potential V _0/3 . As shown in the drawing, when the potential V ₀ is applied to the data line D ₁ at the timing when the ground potential is applied to the scan line S ₁ , the pixel PE at the intersection of the lines S ₁ and D ₁ emits light. In addition, the voltage as shown in FIG.
In the current characteristics, if the current rises sharply,
V ₀ / 3,2V _0/3 in FIG. 6 may be either to V _0/2.

7 to 12 show a first method of manufacturing a light emitting element comprising a field emission electron source and a field emission electron source (cathode), an anode and a fluorescent material which constitute the display device according to the present invention. .

In the step of FIG. 7, a mask 40 made of SiO ₂ is formed on one main surface of the substrate 10 made of Si, for example. Then, in the process of FIG. 8, the substrate surface is selectively etched by anisotropic etching using the mask 40 to form the cathode chip 10a.

Next, in the process of FIG. 9, the surface of the substrate is thermally oxidized to form the SiO ₂ film 42. Then, in the process of FIG. 10, an insulating material and an electrode material are sequentially deposited on the upper surface of the substrate to sequentially form the insulating film 12 and the anode layer 18. Further, in the process of FIG. 11, the fluorescent material layer 20 is formed on the anode layer 18 by depositing the fluorescent material on the upper surface of the substrate. Insulation film 1
2. In the stack of the anode layer 18 and the fluorescent material layer 20, holes 21 corresponding to the mask 40 are formed by sequential vapor deposition.

After that, in the process of FIG. 12, the mask 40 is removed by performing etching treatment of SiO _{2 and} the SiO ₂ film 42 is removed in the hole 21. As a result, the insulating material, the electrode material, and the fluorescent material on the mask 40 are removed, and the cathode chip 10a is exposed. The electrons emitted from the cathode chip 10a collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

13 to 15 show a field emission electron source and a field emission electron source (cathode) which constitute the display device according to the present invention.
2 shows a second manufacturing method of a light emitting device composed of an anode and a fluorescent material.

The process of FIG. 13 is a process following the process of FIG. 9, and the insulating film 12 and the anode layer 1 are the same as those described in FIG.
8 are sequentially formed. A hole 21 corresponding to the mask 40 is formed in the stacked layer of the insulating film 12 and the anode layer 18 by sequential vapor deposition.

Next, in the step of FIG. 14, to remove the SiO ₂ film 42 at hole 21 to remove the mask 40 by performing the etching process of SiO _2. As a result, the insulating material and the electrode material on the mask 40 are removed, and the cathode chip 10a is exposed.

After that, in the process of FIG. 15, the anode layer 18 partially exposed at the opening of the hole 21 is formed by depositing the fluorescent material obliquely on the upper surface of the substrate as indicated by the dashed arrow. The fluorescent material layer 20 is formed on the anode layer 18 so as to cover the end portions. The electrons emitted from the cathode chip 10a collide with the fluorescent material layer 20 as indicated by the solid arrow to cause it to emit light.

In the light emitting device manufactured by the second manufacturing method, since the fluorescent material layer 20 comes closer to the cathode chip 10a, the number of electrons colliding with the fluorescent material layer 20 increases and the brightness of light emission increases. It becomes possible.

16 to 20 show a field emission electron source and a field emission electron source (cathode) constituting the display device according to the present invention.
9 shows a third manufacturing method of a light emitting device comprising an anode, a fluorescent material and a fluorescent material.

In the step of FIG. 16, the cathode chip 10a is formed on one main surface of the substrate 10 in the same manner as described with reference to FIGS. Then, in the process of FIG. 17, the insulating film 12 and the anode layer 18 are sequentially formed on the upper surface of the substrate by sequentially sputtering the insulating material and the electrode material. At this time,
The insulating film 12 and the anode layer 18 are stacked to form the cathode chip 10a.
The part corresponding to is raised.

Next, in the process of FIG. 18, the fluorescent material layer 20 is formed on the anode layer 18 by sputtering the fluorescent material on the upper surface of the substrate. At this time, the fluorescent material layer 20 has a shape in which a portion corresponding to the cathode chip 10a is raised.

Next, in the step shown in FIG. 19, after the polyimide resin is flatly deposited on the upper surface of the substrate, the resin layer 44 is etched back until the raised portion of the fluorescent material layer 20 is exposed, and the resin layer 44 is removed. Leave it around the ridge.

After that, in the process of FIG. 20, the fluorescent material layer 20, the anode layer 18 and the insulating film 12 are sequentially selectively etched using the remaining resin layer 44 as a mask to expose the cathode chip 10a. After that, the resin layer 44 is removed. The electrons emitted from the cathode chip 10a collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

21 to 23 show a field emission electron source and a field emission electron source (cathode) which constitute the display device according to the present invention.
9 shows a fourth method for producing a light-emitting element consisting of an anode and a fluorescent material.

In the step of FIG. 21, an electrode material such as W (tungsten) is deposited on one main surface of the insulating substrate 10 made of crystal or the like, and then the electrode material layer is formed into a resist layer 46a,
The cathode layers 36a and 36b are formed by patterning using 46b as a mask. Then, the surface of the substrate is selectively etched using the stack of the cathode layer 36a and the resist layer 46a and the stack of the cathode layer 36b and the resist layer 46b as a mask to form the protrusions 11a and 11b. Then, an electrode material is vapor-deposited on the upper surface of the substrate to form the anode layer 18
To form.

Next, in the step of FIG. 22, the resist layer 46
a and 46b are removed together with the electrode material thereon. And
The anode layer 18 remaining on the substrate 10 is appropriately patterned. Further, in the cathode layers 36a and 36b, the anode layer 18
The portion facing to is patterned in a comb shape or the like.

After that, in the process of FIG. 23, after the fluorescent material is vapor-deposited on the upper surface of the substrate, unnecessary portions of the fluorescent material layer are removed, so that the fluorescent material layer 20 becomes the anode layer 18 and the cathode layer 36a.
It is formed on 36b. The fluorescent material layer 20 on the cathode layers 36a and 36b may be removed. The electrons emitted from the cathode layers 36a and 36b collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

24 to 27 are a field emission electron source and a field emission electron source (cathode) constituting the display device according to the present invention.
5 shows a fifth manufacturing method of a light emitting device comprising an anode, a fluorescent material and a fluorescent material.

In the step of FIG. 24, an electrode material such as W is deposited on one main surface of the insulating substrate 10 made of crystal or the like, and then the electrode material layer is patterned by using the resist layer 46 as a mask. The cathode layer 36 is formed. Then, the protrusion 11 is formed by selectively etching the surface of the substrate using the stack of the cathode layer 36 and the resist layer 46 as a mask.

Next, in the process of FIG. 25, an electrode material is vapor-deposited on the upper surface of the substrate to form the anode layer 18. Then, in the process of FIG. 26, a fluorescent material layer is formed on the anode layer 18 by depositing a fluorescent material on the upper surface of the substrate.

Thereafter, in the process of FIG. 27, the resist layer 4
6 is removed together with the electrode material and the fluorescent material thereon. The portion of the cathode layer 36 facing the anode layer 18 may be patterned in a comb shape or the like. The electrons emitted from the cathode layer 36 collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

28 to 33 are field emission electron sources and field emission electron sources (cathodes) which constitute the display device according to the present invention.
The 6th manufacturing method of the light emitting element which consists of an anode and a fluorescent material is shown.

In the process of FIG. 28, the substrate 10 made of Si is used.
Masks 48a, 4 made of Si ₃ N ₄ on one main surface of
After forming 8b, the projections 11A and 11B are formed by selectively etching the substrate surface by anisotropic etching using the masks 48a and 48b. And
In the process of FIG. 29, the SiO ₂ film 42 is formed by selectively thermally oxidizing the surface of the substrate using the masks 48a and 48b. The SiO ₂ film 42 is for electrically separating the later-described anode layer 18 from the substrate 10.

Next, in the process of FIG. 30, an electrode material and a fluorescent material are sequentially deposited on the upper surface of the substrate to form an anode layer 18 and a fluorescent material layer 20. Then, in the process of FIG. 31, the mask 4
8a and 48b are removed together with the fluorescent material thereon, and the protrusion 1
The upper ends of 1A and 11B are exposed.

Next, in the step of FIG. 32, the cathode layers 36a, 3 are formed on the upper ends of the protrusions 11A, 11B by the oblique vapor deposition process.
6b is formed. Then, in the process of FIG. 33, the cathode layer 3
The SiO ₂ film 42 is removed from the peripheral portions of the protrusions 11A and 11B by selective etching using the masks 6a and 36b, the anode layer 18 and the fluorescent material layer 20 as masks. Cathode layer 36a,
The electrons emitted from 36b collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

34 to 40 show a field emission electron source and a field emission electron source (cathode) which constitute the display device according to the present invention.
7 shows a seventh method for producing a light emitting device comprising an anode, a fluorescent material and a phosphor.

In the process of FIG. 34, the cathode layer 36, the insulating film 50 and the resist layer 5 are formed on one main surface of the insulating substrate 10.
2 are sequentially formed. Then, in the process of FIG. 35, the insulating film 50 is patterned by the selective etching process using the resist layer 52 as a mask. Further, in the process of FIG. 36, the cathode layer 36 is patterned by selective etching using the resist layer 52 and the insulating film 50 as a mask.

Next, in the step of FIG. 37, the resist layer 5
2. The recess R is provided on the surface of the substrate 10 by the selective etching process using the insulating film 50 and the cathode layer 36 as a mask. Then, in the process of FIG. 38, an electrode material is vapor-deposited on the upper surface of the substrate to form the anode layer 18 in the recess R.

Thereafter, in the step of FIG. 39, the resist layer 5
2 is removed together with the electrode material thereover to expose the insulating film 50. Then, in the process of FIG. 40, the fluorescent material layer 20 is formed on the anode layer 18 and the insulating film 50 by depositing a fluorescent material on the upper surface of the substrate. At this time, the fluorescent material layer 20 is formed so as to cover a part of the end portion of the anode layer 18 facing the cathode layer 36. The fluorescent material layer 20 on the insulating film 50 may be removed. The electrons emitted from the cathode layer 36 collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

In the light emitting device according to the seventh manufacturing method, since the fluorescent material layer 20 on the anode layer 18 comes closer to the cathode layer 36, the number of electrons colliding with the fluorescent material layer 20 is increased. It is possible to increase the brightness of light emission.

41 to 45 are field emission electron sources and field emission electron sources (cathodes) which constitute the display device according to the present invention.
The 8th manufacturing method of the light emitting element which consists of an anode and a fluorescent material is shown.

In the process of FIG. 41, the substrate 10 made of Si is used.
After the metal is vapor-deposited on one of the main surfaces to form the cathode layer 36, a mask 54 made of SiO ₂ is formed thereon.
Then, in the process of FIG. 42, the cathode layer 36 is patterned by selective etching using the mask 54.

Next, in the process of FIG. 43, the surface of the substrate is selectively etched by anisotropic etching using the mask 54 to form the protrusion 10A. Then, in the process of FIG. 44, an insulating material, an electrode material, and a fluorescent material are sequentially deposited on the upper surface of the substrate to sequentially form the insulating film 12, the anode layer 18, and the fluorescent material layer 20.

Then, in the step of FIG. 45, the mask 54 is removed together with the insulating material, the electrode material and the fluorescent material by performing the etching treatment of SiO ₂ . Insulating film 12
When SiO ₂ is formed of SiO ₂ , since the insulating film 12 is etched in the vicinity of the protrusion 10A, the exposed area of the edge portion of the anode layer 18 facing the cathode layer 36 increases. The electrons emitted from the cathode layer 36 collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

46 to 50 are a field emission electron source and a field emission electron source (cathode) which constitute the display device according to the present invention.
9 illustrates a ninth manufacturing method of a light emitting device including an anode and a fluorescent material.

In the process of FIG. 46, the substrate 10 made of Si is used.
A mask 56 is formed on one of the main surfaces. And FIG.
In step 7, the cathode chip 10a is formed by performing anisotropic etching (dry etching) of Si using the mask 56.

Next, in the step of FIG. 48, the upper portion of the cathode chip 10a is laterally sharpened by performing isotropic etching (dry etching) of Si using the mask 56. Then, in the process of FIG. 49, an insulating material, an electrode material, and a fluorescent material are sequentially deposited on the upper surface of the substrate to sequentially form the insulating film 12, the anode layer 18, and the fluorescent material layer 20.

Thereafter, in the step of FIG. 50, the mask 56 is removed together with the insulating material, the electrode material and the fluorescent material thereon. The electrons emitted from the cathode chip 10a collide with the fluorescent material layer 20 as indicated by an arrow to cause it to emit light.

FIG. 51 shows an insulating substrate 1 suitable for use in manufacturing a dot matrix type display device by using the manufacturing method shown in FIGS. 21 to 23, 24 to 27 or 34 to 40.
0, and the anode wiring layer 60 is formed on one main surface of the substrate 10 so as to be embedded with insulating films 62 and 64.

When a display device is manufactured using the substrate of FIG. 51, the anode layer 18 is formed on the anode wiring layer 60 as illustrated in FIGS. That is, in the process of FIG. 52, after the electrode material is vapor-deposited on the insulating film 64, the electrode material layer is selectively etched using the resist layers 46a and 46b as masks to form the cathode layers 36a and 36b. Then, in the process of FIG. 53, the cathode layer 36a and the resist layer 46a are stacked, and the cathode layer 36b and the resist layer 4 are formed.
The insulating film 64 is selectively etched using the layered structure of 6b as a mask to form the protrusions 64a and 64b and expose the anode wiring layer 60. Then, an electrode material is vapor-deposited on the upper surface of the substrate to form the anode layer 18. The subsequent steps can be the same as those described with reference to FIGS.

In the voltage-current characteristics as shown in FIG. 3, if the rising of the current is too steep, the cathode chip or the cathode layer may be destroyed by overcurrent. In order to prevent such destruction, it is preferable to use an insulating substrate 10 as shown in FIG. This substrate 10 has a structure similar to that of FIG. 51, in which a resistance layer 60 is provided on an anode wiring layer 60, and the resistance layer 60 suppresses an increase in anode current.

When the substrate on which the dipole display structure is formed as described above and the signal processing circuit including the driving circuit and the like are connected by, for example, a printed wiring or the like, the connection line increases as the number of pixels increases. And the pitch becomes narrower. In this case, the dipole display structure and the signal processing circuit can be formed on one substrate.

[0074]

As described above, according to the present invention, the anode on which the fluorescent material layer is deposited is arranged in the vicinity of the cathode on the substrate to realize the diode display structure. The effect (c) is obtained.

(A) Since it has a bipolar structure, one power source is sufficient. Further, since the structure is such that the fluorescent material layer is observed from the light emitting surface side, the decrease in luminance is small. Therefore, lower voltage and lower power can be easily achieved.

(B) Since the electrons emitted from the cathode are attracted to the anode in the vicinity of the cathode, for example, by disposing the anode so as to surround the cathode, the probability that the emitted electrons interfere with the next pixel is extremely small. can do. Therefore, the pixel interval can be reduced, and the display surface can be easily miniaturized and highly refined.

(C) Since the anode is provided on the substrate, it is not necessary to provide the anode on the transparent plate facing the substrate. Therefore, the adjustment of the distance between the substrate and the transparent plate does not require high accuracy as in the conventional case, and the manufacturing yield of the display device is improved.

(D) Since the fluorescent material is directly provided on the anode, a light emitting element (a light emitting element having a cathode, an anode and a fluorescent material) is formed.
It is easy to reduce the unit size.

(E) In the display device having the structure according to the second and seventh manufacturing methods, by bringing the fluorescent material close to the cathode, the number of electrons colliding with the fluorescent material is increased and the brightness of light emission is improved. be able to.

[Brief description of drawings]

FIG. 1 is a sectional view showing a display device according to an embodiment of the present invention.

FIG. 2 is a top view showing the cathode chip arrangement of the device of FIG.

FIG. 3 is a graph showing an example of anode voltage-anode current characteristics of the device of FIG.

FIG. 4 is a graph showing accelerating voltage-luminance characteristics of various fluorescent materials.

5 is a top view showing an arrangement of data lines and scan lines of an image display device using the display structure of FIG.

6 is a circuit diagram showing a drive circuit of the device of FIG.

FIG. 7 is a substrate cross-sectional view showing a mask forming step in the first manufacturing method of the display device according to the present invention.

FIG. 8 is a substrate cross-sectional view showing an etching process that follows the process of FIG.

9 is a substrate cross-sectional view showing an oxidation step that follows the step of FIG.

FIG. 10 is a substrate cross-sectional view showing an insulating material deposition and anode layer forming step that follows the step of FIG.

11 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG.

FIG. 12 is a substrate cross-sectional view showing an etching process following the process of FIG.

FIG. 13 is a substrate cross-sectional view showing an insulating material deposition and anode layer forming step in the second manufacturing method of the display device according to the present invention.

FIG. 14 is a cross-sectional view of a substrate showing an etching step that follows the step of FIG.

FIG. 15 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG.

FIG. 16 is a substrate cross-sectional view showing a step of forming a cathode chip in the third manufacturing method of the display device according to the present invention.

FIG. 17 is a substrate cross-sectional view showing an insulating material deposition step and an anode layer forming step that follows the step of FIG.

FIG. 18 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG.

FIG. 19 is a substrate cross-sectional view showing a polyimide layer forming step following the step of FIG.

FIG. 20 is a substrate cross-sectional view showing an etching process that follows the process of FIG.

FIG. 21 is a substrate cross-sectional view showing an anode layer forming step in the fourth manufacturing method of the display device according to the present invention.

FIG. 22 is a substrate cross-sectional view showing a resist removal and patterning process that follows the process of FIG. 21.

FIG. 23 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG. 22.

FIG. 24 is a substrate sectional view showing an etching step in the fifth manufacturing method of the display device according to the present invention.

25 is a substrate cross-sectional view showing an anode layer forming step following the step of FIG. 24. FIG.

FIG. 26 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG. 25.

FIG. 27 is a substrate cross-sectional view showing a resist removing step that follows the step of FIG.

FIG. 28 is a substrate cross-sectional view showing an etching step in the sixth manufacturing method of the display device according to the present invention.

29 is a substrate cross-sectional view showing an oxidation step that follows the step of FIG. 28. FIG.

FIG. 30 is a substrate cross-sectional view showing an anode layer forming step and a fluorescent material applying step following the step of FIG. 29.

31 is a substrate cross-sectional view showing a mask removing step following the step of FIG. 30. FIG.

32 is a substrate cross-sectional view showing a cathode layer forming step following the step of FIG. 31. FIG.

FIG. 33 is a substrate cross-sectional view showing an etching process following the process of FIG. 32.

FIG. 34 is a substrate cross-sectional view showing a resist layer forming step in the seventh manufacturing method of the display device according to the present invention.

FIG. 35 is a substrate cross-sectional view showing an etching process following the process of FIG. 34.

FIG. 36 is a substrate cross-sectional view showing an etching process that follows the process of FIG.

FIG. 37 is a substrate cross-sectional view showing an etching process following the process of FIG. 36.

38 is a substrate sectional view showing an anode layer forming step following the step of FIG. 37. FIG.

FIG. 39 is a substrate cross-sectional view showing a resist removing step that follows the step of FIG. 38.

FIG. 40 is a substrate cross-sectional view showing a fluorescent material deposition step following the step of FIG. 39.

FIG. 41 is a substrate sectional view showing a mask forming step in the eighth manufacturing method of the display device according to the present invention.

FIG. 42 is a substrate cross-sectional view showing an etching process that follows the process of FIG. 41.

43 is a cross-sectional view of a substrate showing an etching step that follows the step of FIG.

44 is a cross-sectional view of a substrate showing an insulating material deposition step, an anode layer formation step, and a fluorescent material deposition step that follow the step of FIG. 43. FIG.

FIG. 45 is a substrate cross-sectional view showing a mask removing step that follows the step of FIG. 44.

FIG. 46 is a substrate cross-sectional view showing a mask forming step in the ninth manufacturing method of the display device according to the present invention.

FIG. 47 is a substrate cross-sectional view showing an anisotropic etching step that follows the step of FIG. 46.

48 is a substrate cross-sectional view showing an isotropic etching process that follows the process of FIG. 47. FIG.

FIG. 49 is a substrate cross-sectional view showing an insulating material depositing step, an anode layer forming step, and a fluorescent material depositing step that follow the step of FIG. 48.

FIG. 50 is a substrate cross-sectional view showing a mask removing step that follows the step of FIG. 49.

FIG. 51 is a cross-sectional view showing an insulating substrate having an anode wiring layer.

52 is a substrate cross-sectional view showing a cathode layer forming step in a method for manufacturing a display device using the substrate of FIG. 51. FIG.

53 is a substrate cross-sectional view showing an etching and anode layer forming step following the step of FIG. 52. FIG.

FIG. 54 is a cross-sectional view showing an insulating substrate having a resistance layer on the anode wiring layer.

FIG. 55 is a cross-sectional view showing an example of a conventional display device.

FIG. 56 is a cross-sectional view showing another example of the conventional display device.

57 is a top view showing the arrangement of cathode layers and gate electrode layers of the device of FIG. 56. FIG.

[Explanation of symbols]

10: substrate, 10a: cathode chip, 12: insulating film, 1
6: transparent plate, 18: anode layer, 20: fluorescent material layer, 22: spacer.

Claims (3)

[Claims] 1. A substrate, a cathode formed on one main surface of the substrate, which is capable of emitting electrons by an electric field, and a cathode for applying an electric field to the cathode on one main surface of the substrate. An anode provided in the vicinity, a fluorescent material layer formed on the anode, sealing means for vacuum-sealing the cathode, the anode and the fluorescent material layer, and one main surface of the substrate And a display configured such that the fluorescent material layer can be seen through. 2. A substrate, a cathode formed on one main surface of the substrate, which is capable of emitting electrons by an electric field, and a cathode for applying an electric field to the cathode on one main surface of the substrate. An anode laminated on a substrate, a fluorescent material layer laminated on the anode so as to cover at least a part of an end portion of the anode, and a seal for vacuum-sealing the cathode, the anode and the fluorescent material layer. Stop means, which is configured to allow the fluorescent material layer to be seen through toward one main surface of the substrate. 3. A substrate, a cathode formed in a shape having sharp apexes on one main surface of the substrate, capable of emitting electrons by an electric field, and the cathode on one main surface of the substrate. An anode provided to exert an electric field on the cathode, which is formed on the substrate so as to surround the cathode and to have an opening portion at a position corresponding to the cathode, and an end portion of the anode. A fluorescent material layer laminated on the anode so as to cover at least a part of the cathode, the sealing means for vacuum sealing the cathode, the anode and the fluorescent material layer, on one main surface of the substrate And a structure configured such that the phosphor layer can be seen through.