JPH079333Y2 - Ion generator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to an ion generator used in a semiconductor manufacturing apparatus or the like.

[Prior Art] In this type of ion generator, it is necessary to align the ion source with the extraction electrode. Conventionally, the alignment is performed outside the vacuum chamber, or the chamber is exposed to the atmosphere during installation. In this state, the observation was performed from directly below, and when the ion beam was generated, it was not possible to observe the ion source from directly below or adjust the positions of the ion source and the extraction electrode.

[Problems to be Solved by the Invention] By the way, as described above, in the conventional technique, the ion source and the extraction electrode are aligned outside the vacuum chamber. There is a possibility that the position of the ion source may shift due to a change in the relationship or thermal expansion due to heating of the ion source.

Furthermore, when the chamber was evacuated, the ion source was heated, and the ion beam was being emitted, the ion source could not be observed and the positions of the ion source and the extraction electrode could not be adjusted. .

The present invention is intended to solve the above problems, and an object thereof is to provide an ion generator capable of observing the position of the ion source and adjusting the positions of the ion source and the extraction electrode even when the ion beam is generated. .

[Means for Solving the Problems] In order to achieve the above object, the ion generator of the present invention is
An ion source, an ion source drive unit that adjusts the movement of the position of the ion source, an extraction electrode that extracts ions from the ion source, a reflecting mirror having a hole through which the extracted ion beam passes, and this reflecting mirror. A chamber having a window through which the tip of the ion source can be observed is provided, and the tip of the ion source and the extraction electrode are aligned through the window.

[Operation] In the above structure, the tip of the ion source can be observed through the window of the vacuum chamber through a reflecting mirror having a hole for passing an ion beam, using a magnifying microscope or the like. Therefore, the positional relationship between the tip of the ion source and the extraction electrode can be maintained while the vacuum chamber in which the ion source is attached is evacuated and the ion source is being heated or the ion beam is being emitted. It can be observed and accurate alignment can be performed.

[Embodiment] An embodiment of the ion generator of the present invention will be described below with reference to the drawings.

FIG. 1 shows the configuration of the ion generator of this embodiment.

An ion generator 1 for generating ions used for semiconductor processing has a vacuum chamber 2, and an ion source 3 for ionizing a metal material is fixed in the vacuum chamber 2 by a knife edge electrode 5. Has been done. The vacuum chamber 2 is provided with an ion source drive unit 4, and the drive unit 4 enables fine adjustment of the position of the knife edge electrode 5. Further, an extraction electrode 6 for extracting ionized metal ions from the ion source 3 is provided. A heating power source 7 for heating the ion source 3 is connected to the ion source 3, and an extraction power source 8 is connected to the extraction electrode 6 to generate ions and perform extraction.

Further, a straight line introduction machine 9 is provided so as to project inward from the side wall of the vacuum chamber 2, and the tip of this straight line introduction machine 9 is made to face near the path through which the ion beam passes, and the ion beam extracted here is A reflector 10 with a hole to pass through is attached. Further, a peep window 11 is formed on the side wall of the vacuum chamber 2 at a position where the tip of the ion source 3 can be observed through the reflecting mirror 10, and a magnifying microscope 12 and a camera 13 are opposed to this. is set up.

Next, the operation of the above configuration will be described.

With the heating power source 7, the ion source 3 is heated to liquefy the metal, and the metal is ionized by the potential difference applied between the extraction electrodes 6 to perform extraction. The semiconductor beam is processed by passing the ion beam through the reflecting mirror 10 having a hole. The position of the tip of the ion source 3 can be observed from the outside of the vacuum chamber 2 by the magnifying microscope 12 and the camera 13 via the reflecting mirror 10. In addition, the reflecting mirror 10 is a straight line introducing machine 9
, And can be moved uniaxially from the outside of the vacuum chamber 2.

Therefore, after setting the reflecting mirror 10 so as to be located below the extraction electrode 6, the ion source drive unit 4 is moved while observing the tip of the ion source 3 with the magnifying microscope 12 through the observation window 11 from the outside of the vacuum chamber 2. Positioning can be performed by driving and adjusting the position of the ion source 3.

Similarly, the alignment can be performed even when the ion source 3 is heated. Further, since a hole through which the ion beam passes is formed in the reflecting mirror 10, observation of the ion source 3 and the ion source 3 and the extraction electrode 6 are performed even when the ion beam is being emitted.
The position can be adjusted.

In addition, although the liquid metal ion source is shown as the ion source in the above-mentioned embodiment, various types are applicable without being limited thereto.

[Advantage of the Invention] As described above, according to the present invention, the ion source is heated when the vacuum is pulled by providing the reflecting mirror having a hole for passing the ion beam and the magnifying microscope. In this case, it is possible to observe the ion source and adjust the positions of the ion source and the extraction electrode even when the ion beam is generated.

[Brief description of drawings]

FIG. 1 is a block diagram of the ion generator of this embodiment. 2 ... Vacuum chamber, 3 ... Ion source, 4 ... Ion source drive part, 6 ... Extraction electrode, 9 ... Straight line introduction machine, 10 ...
Reflector with a hole, 12 ... Magnifying microscope.

Claims (1)

[Scope of utility model registration request] 1. An ion source, an ion source drive unit for adjusting the movement of the ion source position, an extraction electrode for extracting ions from the ion source, and a reflector having a hole through which the extracted ion beam passes. An ion generator comprising: a vacuum chamber having a window through which the tip of the ion source can be observed through the reflecting mirror.