JPH0792189A - Acceleration sensor - Google Patents

Acceleration sensor

Info

Publication number
JPH0792189A
JPH0792189A JP25903593A JP25903593A JPH0792189A JP H0792189 A JPH0792189 A JP H0792189A JP 25903593 A JP25903593 A JP 25903593A JP 25903593 A JP25903593 A JP 25903593A JP H0792189 A JPH0792189 A JP H0792189A
Authority
JP
Japan
Prior art keywords
fixed
electrode
acceleration sensor
movable
acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25903593A
Other languages
Japanese (ja)
Inventor
Yoshihiro Konaka
義宏 小中
Yasuhiro Negoro
泰宏 根来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP25903593A priority Critical patent/JPH0792189A/en
Publication of JPH0792189A publication Critical patent/JPH0792189A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0817Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for pivoting movement of the mass, e.g. in-plane pendulum

Landscapes

  • Pressure Sensors (AREA)

Abstract

PURPOSE:To enhance sensitivity in the detection of acceleration by decreasing the space between the fixed electrode and the movable electrode of an acceleration sensor. CONSTITUTION:A metal film 12 is formed by electrolytic plating on the surface of each fixed part 3 of an acceleration sensor 11. A fixed electrode 12A is provided oppositely to the movable electrode 7A at a mass part 7 and the space dB between the electrodes 7A, 12A is set at a small value. This structure enhances the detection sensitivity of acceleration sensor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば車両等の加速度
を検出するのに用いて好適な加速度センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acceleration sensor suitable for detecting the acceleration of a vehicle or the like.

【0002】[0002]

【従来の技術】一般に、車両等の加速度や回転方向を検
出するのに用いられる加速度センサは、絶縁基板上に固
定電極と、該固定電極に対向するように配設された可動
電極とを有し、加速度が加えられたときにこの可動電極
と固定電極との離間寸法が加速度に応じて変化するのを
静電容量の変化として検出するもので、本出願人は先に
特願平4−263013号として、図6ないし図8に示
すような加速度センサ(以下、先行技術という)を提案
した。
2. Description of the Related Art Generally, an acceleration sensor used to detect the acceleration or rotation direction of a vehicle has a fixed electrode on an insulating substrate and a movable electrode arranged so as to face the fixed electrode. However, when the acceleration is applied, it is detected that the distance between the movable electrode and the fixed electrode changes according to the acceleration as a change in capacitance. As No. 263013, an acceleration sensor (hereinafter referred to as a prior art) as shown in FIGS. 6 to 8 has been proposed.

【0003】図中、1は先行技術による加速度センサを
示し、該加速度センサ1は凹部2Aが形成された絶縁基
板としてのガラス基板2と、該ガラス基板2上で凹部2
Aを挟むように設けられた一対の固定部3,3と、該各
固定部3間に設けられた可動部4とから大略構成されて
いる。
In the figure, reference numeral 1 denotes an acceleration sensor according to the prior art. The acceleration sensor 1 includes a glass substrate 2 as an insulating substrate having a recess 2A, and a recess 2 on the glass substrate 2.
It is roughly configured by a pair of fixed portions 3 and 3 provided so as to sandwich A and a movable portion 4 provided between the fixed portions 3.

【0004】ここで、前記各固定部3、可動部4は後述
する単一の低抵抗(0.01〜0.02Ωcm)のシリコ
ンウエハ(図示せず)からエッチング加工により分離し
て形成されるため、それぞれが導電性を有している。そ
して、凹部2Aを挟んだ一対の各固定部3の対向端面は
固定電極3Aとして、該各固定部3と一体に形成されて
いる。
Here, each of the fixed portion 3 and the movable portion 4 is separately formed by etching from a single low resistance (0.01 to 0.02 Ωcm) silicon wafer (not shown) described later. Therefore, each has conductivity. The opposed end faces of the pair of fixed portions 3 sandwiching the recess 2A are formed integrally with the fixed portions 3 as fixed electrodes 3A.

【0005】また、前記可動部4は基端側にガラス基板
2上に固着されて固定端となる支持部5が形成され、該
支持部5の先端側には梁6と、該梁6を介して変位可能
な自由端となる質量部7とが形成されている。ここで、
前記可動部4も固定部3と同一のシリコンウエハから形
成されるために導電性を有しており、質量部7は各固定
電極3A側の対向端面が可動電極7A,7Aとして質量
部7と一体に形成されている。そして、このように形成
される質量部7は、前記ガラス基板2の凹部2Aの上側
に位置し、各固定部3間で矢示A方向に変位可能な状態
で支持部5と梁6によって支持されている。
Further, the movable portion 4 has a supporting portion 5 fixed to the glass substrate 2 on the base end side to serve as a fixed end, and a beam 6 and the beam 6 on the tip side of the supporting portion 5. A mass portion 7 that is a free end that can be displaced is formed. here,
Since the movable portion 4 is also formed of the same silicon wafer as the fixed portion 3 and thus has conductivity, the mass portion 7 has opposite end surfaces on the fixed electrode 3A side as movable electrodes 7A and 7A. It is formed integrally. The mass portion 7 thus formed is located above the concave portion 2A of the glass substrate 2 and is supported by the support portion 5 and the beam 6 in a state of being displaceable in the arrow A direction between the fixed portions 3. Has been done.

【0006】このように構成される加速度センサ1は、
図6に示す矢示A方向に外部から加速度が加わると、質
量部7が梁6を介して変位し、該質量部7が左,右の固
定部3,3に対して接近または離間するので、このとき
の離間寸法dA の変位を固定電極3Aと可動電極7A間
の静電容量の変化として外部の図示しない信号処理回路
に出力し、該信号処理回路ではこの静電容量の変化に基
づき加速度に応じた信号を出力する。
The acceleration sensor 1 thus constructed is
When an external acceleration is applied in the direction of arrow A shown in FIG. 6, the mass portion 7 is displaced via the beam 6, and the mass portion 7 approaches or separates from the left and right fixing portions 3 and 3. The displacement of the separation dimension dA at this time is output as an electrostatic capacitance change between the fixed electrode 3A and the movable electrode 7A to an external signal processing circuit (not shown), and the signal processing circuit accelerates based on this electrostatic capacitance change. The signal corresponding to is output.

【0007】[0007]

【発明が解決しようとする課題】ところで、上述した先
行技術では、梁6およびその支持部5と固定部3は異方
性エッチングにより分離形成されるが、この場合、エッ
チングマスクとシリコンの方位を合わせることで基板に
垂直な溝が形成することができる。しかし、加速度セン
サ1として、高感度検出するためには、固定電極3Aと
可動電極7Aとの間の離間寸法dA を小さくする必要が
ある。しかし、異方性エッチングによるエッチング処理
においては、エッチング液が溝の奥に入り込まないため
に、幅の狭い溝を形成することが不可能となる。
By the way, in the above-mentioned prior art, the beam 6 and its supporting portion 5 and the fixing portion 3 are separately formed by anisotropic etching. In this case, the orientation of the etching mask and silicon is changed. By combining them, a groove perpendicular to the substrate can be formed. However, in order to detect with high sensitivity as the acceleration sensor 1, it is necessary to reduce the distance dA between the fixed electrode 3A and the movable electrode 7A. However, in the etching process by anisotropic etching, it is impossible to form a groove having a narrow width because the etching liquid does not enter the inside of the groove.

【0008】このため、先行技術による加速度センサ1
においては、固定電極3Aと可動電極7Aとの間の離間
寸法dA を小さくすることができず、検出感度に限界が
あるという未解決な問題がある。
Therefore, the prior art acceleration sensor 1
In the above, there is an unsolved problem that the separation dimension dA between the fixed electrode 3A and the movable electrode 7A cannot be reduced and the detection sensitivity is limited.

【0009】本発明は上述した先行技術の問題に鑑みな
されたもので、本発明は高感度に加速度を検出できるよ
うにした加速度センサを提供することを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to provide an acceleration sensor capable of detecting acceleration with high sensitivity.

【0010】[0010]

【課題を解決するための手段】上記課題を解決するため
に、本発明による加速度センサは、絶縁基板と、該絶縁
基板上に設けられ、低抵抗のシリコン板をエッチング加
工することにより互いに分離して形成された固定部およ
び可動部とを備え、該固定部には固定電極を一体に形成
し、前記可動部は、絶縁基板上に固着された支持部と、
梁を介して該支持部と連結され、加速度が作用したとき
に該加速度に応じて固定部との間で近接、離間するよう
に変位する質量部と、該質量部に前記固定部に形成され
た固定電極との間で微小隙間を介して対向するように設
けられた可動電極とから一体に形成してなる。
In order to solve the above-mentioned problems, an acceleration sensor according to the present invention is provided with an insulating substrate and a low resistance silicon plate provided on the insulating substrate and separated from each other by etching. A fixed part and a movable part formed in a fixed electrode, and a fixed electrode is integrally formed on the fixed part, and the movable part is a supporting part fixed on an insulating substrate,
A mass portion that is connected to the support portion via a beam and that is displaced so as to approach and separate from the fixed portion in response to the acceleration when an acceleration acts, and the mass portion is formed on the fixed portion. Further, it is integrally formed with a movable electrode provided so as to face the fixed electrode with a minute gap therebetween.

【0011】そして、本発明が採用する構成の特徴は、
前記固定電極または可動電極の少なくともどちらか一方
の表面に電解メッキによる金属膜を形成したことにあ
る。
The features of the configuration adopted by the present invention are as follows:
The metal film is formed by electrolytic plating on the surface of at least one of the fixed electrode and the movable electrode.

【0012】[0012]

【作用】固定電極と可動電極とのどちらか一方の面に電
解メッキを施すことにより、互いに対向する電極間に比
較的厚い金属膜を形成することができ、結果として固定
電極と可動電極との間の離間寸法を実質的に狭くするこ
とができる。
By performing electrolytic plating on either surface of the fixed electrode and the movable electrode, a relatively thick metal film can be formed between the electrodes facing each other, and as a result, the fixed electrode and the movable electrode can be formed. The distance between them can be substantially reduced.

【0013】[0013]

【実施例】以下、図1ないし図5に本発明の実施例によ
る加速度センサを示す。
1 to 5 show an acceleration sensor according to an embodiment of the present invention.

【0014】まず、本発明の第1の実施例を図1ないし
図4に基づいて説明するに、本実施例では前述した先行
技術と同一の構成要素に同一の符号を付し、その説明を
省略するものとする。
First, a first embodiment of the present invention will be described with reference to FIGS. 1 to 4. In this embodiment, the same components as those of the above-mentioned prior art are designated by the same reference numerals and the description thereof will be omitted. It shall be omitted.

【0015】図中、11は本実施例による加速度センサ
を示し、該加速度センサ11は先行技術による加速度セ
ンサ1とほぼ同様に、ガラス基板2と、該ガラス基板2
上に設けられた一対の固定部3,3および可動部4とか
ら大略構成され、該可動部4は支持部5,梁6,質量部
7等からなっている、しかし、本実施例では、先行技術
のように固定部3の質量部7に対向する面は直接固定電
極3Aとはなっていない。
In the figure, reference numeral 11 denotes an acceleration sensor according to this embodiment. The acceleration sensor 11 is similar to the acceleration sensor 1 according to the prior art, and the glass substrate 2 and the glass substrate 2 are substantially the same.
It is roughly composed of a pair of fixed parts 3, 3 and a movable part 4 provided on the upper part, and the movable part 4 is composed of a support part 5, a beam 6, a mass part 7, etc. However, in the present embodiment, Unlike the prior art, the surface of the fixed portion 3 facing the mass portion 7 is not directly the fixed electrode 3A.

【0016】12,12は本実施例による金属膜を示
し、該各金属膜12は後述する電解メッキ処理等の方法
により、ニッケル,金等の材料を固定部3の表面に形成
したものである。
Reference numerals 12 and 12 denote metal films according to this embodiment. Each metal film 12 is formed by forming a material such as nickel or gold on the surface of the fixing portion 3 by a method such as an electrolytic plating process described later. .

【0017】従って、質量部7の可動電極7Aと対向す
る各、金属膜12の面が、実施例による固定電極12
A,12Aとなり、該固定電極12Aと可動電極7Aと
の離間寸法dB は先行技術の離間寸法dA よりも狭い幅
となっている。
Therefore, the surface of each metal film 12 facing the movable electrode 7A of the mass portion 7 is fixed electrode 12 according to the embodiment.
A and 12A, and the spacing dimension dB between the fixed electrode 12A and the movable electrode 7A is narrower than the spacing dimension dA of the prior art.

【0018】ここで、加速度センサ11に加わる加速度
の静電容量の変化ΔCは次の数1のようになる。
Here, the change ΔC in the electrostatic capacitance of the acceleration applied to the acceleration sensor 11 is expressed by the following equation 1.

【0019】[0019]

【数1】 ただし、Δd :加速度による質量部7の変化量 ε :誘電率 S :電極面積 dB :固定電極12Aと可動電極7Aとの離間寸法[Equation 1] However, Δd: amount of change of mass part 7 due to acceleration ε: dielectric constant S: electrode area dB: distance between fixed electrode 12A and movable electrode 7A

【0020】この数1からもわかるように、ΔC(加速
度センサ11の感度)を向上させるためには、固定電極
12Aと可動電極7Aとの離間寸法dB を小さくすれば
よく、本実施例による加速度センサ11では金属膜12
の厚さを調整することによって、離間寸法dB を調整で
き、検出感度を向上させることができる。
As can be seen from Equation 1, in order to improve ΔC (sensitivity of the acceleration sensor 11), it is sufficient to reduce the separation dimension dB between the fixed electrode 12A and the movable electrode 7A. In the sensor 11, the metal film 12
The spacing dimension dB can be adjusted by adjusting the thickness of the, and the detection sensitivity can be improved.

【0021】本実施例による加速度センサ11は以上の
如き構成を有するもので、その基本的な動作については
先行技術によるものと格別差異はない。
The acceleration sensor 11 according to this embodiment has the above-mentioned structure, and its basic operation is not different from that of the prior art.

【0022】次に、金属膜12の形成方法について説明
する。
Next, a method of forming the metal film 12 will be described.

【0023】まず、低抵抗のシリコンウエハに固定部3
と可動部4を形成した後に、固定部3にリード線を接続
し、所定電流(金属膜12の厚さを設定する電流値)を
流した状態で、メッキ槽に浸ける。この結果、固定部3
は陰極として使用され金属膜12が固定部3の表面に形
成される。しかも、可動部4には電流が印加されていな
いから、メッキ槽に漬けられても、金属膜12が形成さ
れることはない。
First, the fixing portion 3 is attached to a low resistance silicon wafer.
After the movable part 4 is formed, a lead wire is connected to the fixed part 3 and a predetermined current (a current value for setting the thickness of the metal film 12) is applied to the fixed part 3 and the movable part 4 is immersed in the plating bath. As a result, the fixed part 3
Is used as a cathode, and the metal film 12 is formed on the surface of the fixed portion 3. Moreover, since no current is applied to the movable portion 4, the metal film 12 is not formed even when immersed in the plating bath.

【0024】このように、シリコンウエハに低抵抗のシ
リコンを使用することにより容易に電解メッキ処理を施
すことができ、固定部3の表面には電流値に対応した厚
さの金属膜12を隙間の奥まで確実に形成することがで
きる。
As described above, by using low resistance silicon for the silicon wafer, the electroplating process can be easily performed, and the metal film 12 having a thickness corresponding to the current value is formed on the surface of the fixed portion 3. It is possible to surely form up to the back.

【0025】さらに、電解メッキ処理はスパッタ,蒸着
等の膜形成処理に比べて、電流を印加した単一の部材に
のみに、奥まで確実に膜形成を行うことができると共
に、膜の厚さも印加する電流値によって調整でき、圧膜
形成を容易に行うことができるという長所を持ってい
る。
Further, compared with the film forming process such as sputtering or vapor deposition, the electrolytic plating process can surely form the film to the depth only on the single member to which the current is applied, and the film thickness can be increased. It has the advantage that it can be adjusted by the value of the applied current and that the pressure film can be easily formed.

【0026】然るに、本実施例においては、各固定部3
の表面に金属膜12を形成して、可動電極7Aと対向す
る面を固定電極12Aとしたから、電極7A,12Aと
の離間寸法dB の幅を小さくすることができ、前記数1
からもわかるように、加速度の検出感度を高め、加速度
の検出精度を向上させることができる。
Therefore, in this embodiment, each fixing portion 3
Since the metal film 12 is formed on the surface and the surface facing the movable electrode 7A is the fixed electrode 12A, the width of the spacing dB from the electrodes 7A, 12A can be reduced.
As can be seen from the above, the acceleration detection sensitivity can be increased and the acceleration detection accuracy can be improved.

【0027】さらに、本実施例においては、電解メッキ
処理によって金属膜12を形成するようにしたから、電
流の強さにより金属膜12の厚さを容易に調整すること
ができ、金属膜12が電極7A,12A間の隙間を調整
する隙間調整層となり、加速度センサ11を使用目的に
合わせた検出感度に設定することができる。
Further, in this embodiment, since the metal film 12 is formed by the electrolytic plating process, the thickness of the metal film 12 can be easily adjusted by the strength of the electric current, and the metal film 12 is formed. It serves as a gap adjusting layer for adjusting the gap between the electrodes 7A and 12A, so that the acceleration sensor 11 can be set to have a detection sensitivity according to the purpose of use.

【0028】なお、前記実施例では、各固定部3に金属
膜12を形成して離間寸法dB の幅を狭くするようにし
たが、図4に示す加速度センサ11′のように、可動部
4に金属膜12′を形成してもよく、各固定部3および
可動部4の両方に金属膜12′を形成するようにしても
よい。
In the above embodiment, the metal film 12 is formed on each fixed portion 3 so that the width of the spacing dimension dB is narrowed. However, like the acceleration sensor 11 'shown in FIG. The metal film 12 ′ may be formed on the metal film 12 ′, or the metal film 12 ′ may be formed on both the fixed portion 3 and the movable portion 4.

【0029】また、前記実施例では片持支持で質量部7
を支持するようにしたが、本発明はこれに限らず、両持
支持で可動部を構成するようにしても、複数の梁により
支持するようにしてもよい。
In the above embodiment, the mass portion 7 is supported by cantilever.
Although the present invention is not limited to this, the present invention is not limited to this, and the movable portion may be constituted by supporting both ends and may be supported by a plurality of beams.

【0030】次に、本発明による第2の実施例を図5に
基づいて説明するに、本実施例の特徴は、固定部の表面
にくし状に形成されたくし状電極板を形成し、対向する
質量部の表面にくし状に形成されたくし状電極板をそれ
ぞれ形成し、固定部側の表面に電解メッキ処理によって
金属膜を形成したことにある。
Next, a second embodiment according to the present invention will be described with reference to FIG. 5. The feature of this embodiment is that a comb-shaped electrode plate formed in a comb shape is formed on the surface of the fixed portion and is opposed to each other. This is because the comb-shaped electrode plates formed in a comb shape were respectively formed on the surface of the mass portion to be formed, and the metal film was formed on the surface of the fixed portion side by electrolytic plating.

【0031】図中、21は本実施例による加速度セン
サ、22は絶縁基板としてのガラス基板を示し、該ガラ
ス基板22上には後述する固定部23,23および可動
部25が形成されている。また、該ガラス基板22には
矩形状の凹部22Aが形成され、該凹部22A上に位置
する可動部25の質量部28および可動側くし状電極2
9は矢示B方向に変位可能になっている。
In the figure, 21 is an acceleration sensor according to this embodiment, 22 is a glass substrate as an insulating substrate, and fixed portions 23, 23 and a movable portion 25, which will be described later, are formed on the glass substrate 22. Further, a rectangular recess 22A is formed in the glass substrate 22, and the mass portion 28 of the movable portion 25 and the movable-side comb-shaped electrode 2 located on the recess 22A are formed.
9 is displaceable in the direction of arrow B.

【0032】23,23は低抵抗を有するシリコン材料
により形成された一対の固定部を示し、該各固定部23
は前記ガラス基板22の左,右に離間して位置し、それ
ぞれ対向する内側面には複数(例えば4枚)の薄板状の
電極板24A,24A,…が突出形成され、該各電極板
24Aは固定電極としての固定側くし状電極24,24
をそれぞれ構成している。
Reference numerals 23 and 23 denote a pair of fixing portions made of a silicon material having a low resistance.
Are spaced apart to the left and right of the glass substrate 22, and a plurality of (for example, four) thin plate-like electrode plates 24A, 24A, ... Is a fixed side comb-shaped electrode 24, 24 as a fixed electrode
Are configured respectively.

【0033】25は低抵抗を有するシリコン材料により
形成された可動部を示し、該可動部25は、前記ガラス
基板22の前,後に離間してガラス基板22に固着され
た支持部26と、該各支持部26に梁27,27を介し
て指示され、前記各固定部3の間に配設された質量部2
8と、該質量部28から左,右方向にそれぞれ突出形成
された複数(例えば4枚)の薄板状の電極板29A,2
9A,…を有する可動側くし状電極29,29とから構
成され、前記各梁27は質量部28を矢示B方向に変位
されるように薄板状に形成されている。
Reference numeral 25 denotes a movable portion made of a silicon material having a low resistance. The movable portion 25 is separated from the front and rear of the glass substrate 22 by a supporting portion 26 fixed to the glass substrate 22, and a supporting portion 26. The mass portion 2 which is instructed to each supporting portion 26 via the beams 27, 27 and is arranged between the respective fixing portions 3.
8 and a plurality (for example, four) of thin plate-shaped electrode plates 29A, 2 which are respectively formed to project leftward and rightward from the mass portion 28.
.., and each beam 27 is formed in a thin plate shape so that the mass portion 28 can be displaced in the arrow B direction.

【0034】30,30は前記各固定部23の表面に形
成された金属膜を示し、該各金属膜30は第1の実施例
で述べた電解メッキ処理によって形成され、可動側くし
状電極29の各電極板29Aと固定側くし状電極24の
各電極板24Aとの離間寸法を小さくすることにより、
検出感度を向上させるものである。
Reference numerals 30 and 30 denote metal films formed on the surfaces of the fixed portions 23. The metal films 30 are formed by the electrolytic plating process described in the first embodiment, and the movable side comb-shaped electrodes 29 are provided. By reducing the distance between each electrode plate 29A and the fixed side comb-shaped electrode 24 between each electrode plate 24A,
It improves the detection sensitivity.

【0035】このように構成される本実施例におよる加
速度センサ1は、前記各可動側くし状電極29の各電極
板29Aは前記各固定側くし状電極24の各電極板24
Aと微小隙間を介して互いに対向するようになり、各電
極板24A,29Aはそれぞれ電気的に並列接続されて
いるから、検出感度を高め、加速度の検出精度を向上さ
せることができる。
In the acceleration sensor 1 according to this embodiment configured as described above, the electrode plates 29A of the movable side comb-shaped electrodes 29 are the electrode plates 24 of the fixed side comb-shaped electrodes 24.
The electrode plates 24A and 29A are opposed to each other with a minute gap therebetween, and the electrode plates 24A and 29A are electrically connected in parallel. Therefore, the detection sensitivity can be increased and the acceleration detection accuracy can be improved.

【0036】さらに、本実施例では、金属膜30を固定
側くし状電極24に形成し、各電極板24Aと可動側く
し状電極29の各電極板29Aとの離間寸法を小さくす
ることができ、より検出精度を高めることができる。
Furthermore, in this embodiment, the metal film 30 is formed on the fixed side comb-shaped electrode 24, and the distance between each electrode plate 24A and the movable side comb-shaped electrode 29 can be reduced. The detection accuracy can be further improved.

【0037】なお、前記実施例では、金属膜30を固定
側くし状電極24に形成したが、本発明はこれに限ら
ず、可動側くし状電極29または両方に電解メッキ処理
により金属膜30を形成してもよい。
Although the metal film 30 is formed on the fixed side comb-shaped electrode 24 in the above embodiment, the present invention is not limited to this, and the metal film 30 is formed on the movable side comb-shaped electrode 29 or both by electrolytic plating. You may form.

【0038】[0038]

【発明の効果】以上詳述した通り、本発明によれば、低
抵抗シリコンからなる固定部と可動部において、それぞ
れに形成された互いに対向する固定電極と可動電極との
少なくともどちらか一方の表面に電解メッキによって金
属膜を形成するようにしたから、隙間の奥まで金属膜を
確実に形成できる。この結果、該固定電極と可動電極と
の離間寸法を小さくでき、加速度の検出感度を向上させ
ることができる。
As described above in detail, according to the present invention, in the fixed portion and the movable portion made of low resistance silicon, at least one surface of the fixed electrode and the movable electrode, which face each other, is formed. Since the metal film is formed by electrolytic plating, the metal film can be surely formed in the depth of the gap. As a result, the distance between the fixed electrode and the movable electrode can be reduced, and the acceleration detection sensitivity can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例による加速度センサの全
体を示す斜視図である。
FIG. 1 is a perspective view showing an entire acceleration sensor according to a first embodiment of the present invention.

【図2】図1に示す加速度センサを上からみた拡大図で
ある。
FIG. 2 is an enlarged view of the acceleration sensor shown in FIG. 1 as seen from above.

【図3】図2中の矢示III −III 方向からみた断面図で
ある。
3 is a cross-sectional view as seen from the direction of arrows III-III in FIG.

【図4】第1の実施例の変形例による加速度センサを示
す図3と同様位置からみた断面図である。
FIG. 4 is a sectional view showing an acceleration sensor according to a modification of the first embodiment as viewed from the same position as in FIG.

【図5】本発明の第2の実施例によるくし状電極型の加
速度センサを示す横断面図である。
FIG. 5 is a cross-sectional view showing a comb-shaped electrode type acceleration sensor according to a second embodiment of the present invention.

【図6】先行技術による加速度センサの全体を示す斜視
図である。
FIG. 6 is a perspective view showing an entire acceleration sensor according to the prior art.

【図7】図6に示す加速度センサを上からみた拡大図で
ある。
FIG. 7 is an enlarged view of the acceleration sensor shown in FIG. 6 seen from above.

【図8】図7の矢示VIII−VIII方向からみた断面図であ
る。
8 is a cross-sectional view as seen from the direction of arrows VIII-VIII in FIG. 7.

【符号の説明】[Explanation of symbols]

2,22 ガラス基板(絶縁基板) 2A,22A 凹部 3,23 固定部 4,25 可動部 5,26 支持部 6,27 梁 7,28 質量部 7A,29 可動電極 11,11′,21 加速度センサ 12,12′,30 金属膜 12A,12A′,24 固定電極 dB 離間寸法 2,22 Glass substrate (insulating substrate) 2A, 22A Recessed part 3,23 Fixed part 4,25 Movable part 5,26 Support part 6,27 Beam 7,28 Mass part 7A, 29 Movable electrode 11,11 ', 21 Acceleration sensor 12, 12 ', 30 Metal film 12A, 12A', 24 Fixed electrode dB Spacing size

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板と、該絶縁基板上に設けられ、
低抵抗のシリコン板をエッチング加工することにより互
いに分離して形成された固定部および可動部とを備え、
該固定部には固定電極を一体に形成し、前記可動部は、
絶縁基板上に固着された支持部と、梁を介して該支持部
と連結され、加速度が作用したときに該加速度に応じて
固定部との間で近接、離間するように変位する質量部
と、該質量部に前記固定部に形成された固定電極との間
で微小隙間を介して対向するように設けられた可動電極
とから一体に形成してなる加速度センサにおいて、前記
固定電極または可動電極の少なくともどちらか一方の表
面に電解メッキによる金属膜を形成したことを特徴とす
る加速度センサ。
1. An insulating substrate, provided on the insulating substrate,
A fixed part and a movable part which are formed separately from each other by etching a low resistance silicon plate,
A fixed electrode is integrally formed on the fixed portion, and the movable portion is
A supporting portion fixed on the insulating substrate, and a mass portion connected to the supporting portion via a beam and displaced so as to approach and separate from the fixed portion in response to the acceleration when an acceleration acts. An acceleration sensor integrally formed with a movable electrode provided in the mass portion so as to face the fixed electrode formed in the fixed portion with a minute gap, wherein the fixed electrode or the movable electrode is provided. An acceleration sensor characterized in that a metal film is formed by electrolytic plating on at least one of the surfaces.
JP25903593A 1993-09-22 1993-09-22 Acceleration sensor Pending JPH0792189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25903593A JPH0792189A (en) 1993-09-22 1993-09-22 Acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25903593A JPH0792189A (en) 1993-09-22 1993-09-22 Acceleration sensor

Publications (1)

Publication Number Publication Date
JPH0792189A true JPH0792189A (en) 1995-04-07

Family

ID=17328434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25903593A Pending JPH0792189A (en) 1993-09-22 1993-09-22 Acceleration sensor

Country Status (1)

Country Link
JP (1) JPH0792189A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010249806A (en) * 2009-03-26 2010-11-04 Seiko Epson Corp Mems sensor, mems sensor manufacturing method, and electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010249806A (en) * 2009-03-26 2010-11-04 Seiko Epson Corp Mems sensor, mems sensor manufacturing method, and electronic device

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