JP3189506B2 - Acceleration sensor - Google Patents

Acceleration sensor

Info

Publication number
JP3189506B2
JP3189506B2 JP16315893A JP16315893A JP3189506B2 JP 3189506 B2 JP3189506 B2 JP 3189506B2 JP 16315893 A JP16315893 A JP 16315893A JP 16315893 A JP16315893 A JP 16315893A JP 3189506 B2 JP3189506 B2 JP 3189506B2
Authority
JP
Japan
Prior art keywords
fixed
mass
insulating substrate
electrode
movable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16315893A
Other languages
Japanese (ja)
Other versions
JPH06347474A (en
Inventor
義宏 小中
泰宏 根来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP16315893A priority Critical patent/JP3189506B2/en
Publication of JPH06347474A publication Critical patent/JPH06347474A/en
Application granted granted Critical
Publication of JP3189506B2 publication Critical patent/JP3189506B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0817Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for pivoting movement of the mass, e.g. in-plane pendulum

Landscapes

  • Pressure Sensors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、例えば車両等の加速度
を検出するのに好適に用いられる加速度センサに関し、
特に製造時の歩留りを向上できるようにした加速度セン
サに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acceleration sensor suitably used for detecting acceleration of a vehicle or the like.
In particular, the present invention relates to an acceleration sensor capable of improving the yield during manufacturing.

【0002】[0002]

【従来の技術】一般に、車両等の加速度や回転方向を検
出するのに用いられる加速度センサは、絶縁基板上に固
定電極と、該固定電極に対向するように配設された可動
電極とを有し、加速度が加えられたときにこの可動電極
と固定電極との離間寸法が加速度に応じて変化するのを
静電容量の変化として検出するもので、従来例えば図1
0ないし図17に示すような加速度センサが知られてい
る。
2. Description of the Related Art In general, an acceleration sensor used to detect the acceleration or the direction of rotation of a vehicle or the like has a fixed electrode on an insulating substrate and a movable electrode disposed to face the fixed electrode. When the acceleration is applied, a change in the distance between the movable electrode and the fixed electrode in accordance with the acceleration is detected as a change in capacitance.
There are known acceleration sensors as shown in FIGS.

【0003】まず、図10ないし図12において、1は
従来技術による加速度センサを示し、該加速度センサ1
は凹部2Aが形成された絶縁基板としてのガラス基板2
と、該ガラス基板2上で凹部2Aを挟むように設けられ
た一対の固定部3,3と、該各固定部3間に設けられた
可動部4とから大略構成されている。
First, in FIGS. 10 to 12, reference numeral 1 denotes an acceleration sensor according to the prior art.
Denotes a glass substrate 2 as an insulating substrate on which a concave portion 2A is formed.
And a pair of fixed parts 3 and 3 provided on the glass substrate 2 so as to sandwich the recess 2 </ b> A, and a movable part 4 provided between the fixed parts 3.

【0004】ここで、前記各固定部3、可動電極4は後
述する単一の低抵抗のシリコンウエハ10からエッチン
グ加工により分離して形成されるため、それぞれが導電
性を有している。そして、凹部2Aを挟んだ一対の固定
部3の対向端面は固定電極3Aとして、該各固定部3と
一体に形成されている。
Here, since each of the fixed part 3 and the movable electrode 4 is formed separately from a single low-resistance silicon wafer 10 to be described later by etching, each of them has conductivity. The opposed end faces of the pair of fixing portions 3 sandwiching the recess 2A are formed integrally with the fixing portions 3 as fixed electrodes 3A.

【0005】また、前記可動部4は基端側にガラス基板
2上に固着されて固定端となる支持部5が形成され、該
支持部5の先端側には梁6と、該梁6を介して変位可能
な自由端となる質量部7とが形成されている。ここで、
前記可動部4も固定部3と同一のシリコンウエハ10か
ら形成されるために導電性を有しており、質量部7は各
固定電極3A側の対向端面が可動電極7A,7Aとして
質量部7と一体に形成されている。そして、このように
形成される質量部7は、前記ガラス基板2の凹部2Aの
上側に位置し、各固定部3間で矢示A方向に変位可能な
状態で支持部5と梁6によって支持されている。
The movable portion 4 has a support portion 5 fixed to the glass substrate 2 on the base end side and serving as a fixed end. A beam 6 and a beam 6 are provided on the distal end side of the support portion 5. And a mass 7 serving as a free end that can be displaced therethrough. here,
Since the movable part 4 is also formed of the same silicon wafer 10 as the fixed part 3, it has conductivity. The mass part 7 has movable electrodes 7A, 7A whose facing end faces on the fixed electrode 3A side are movable parts 7A. And are formed integrally. The mass portion 7 thus formed is positioned above the concave portion 2A of the glass substrate 2 and supported by the support portion 5 and the beam 6 in a state where it can be displaced in the direction of arrow A between the fixed portions 3. Have been.

【0006】次に、図13ないし図17により、従来技
術による加速度センサ1の製造方法について述べる。
Next, a method of manufacturing the acceleration sensor 1 according to the prior art will be described with reference to FIGS.

【0007】図13中、10はシリコン板としてのシリ
コンウエハを示し、該シリコンウエハ10は表裏(一側
及び他側)面が(110)面となり、例えば低抵抗
(0.01〜0.02Ωcm)の、直径約7.5〜15
cm,厚さ約300μmの程度の円板状に形成されてい
る。
In FIG. 13, reference numeral 10 denotes a silicon wafer as a silicon plate. The front and back (one side and the other side) of the silicon wafer 10 are (110) planes, for example, low resistance (0.01 to 0.02 Ωcm). ) With a diameter of about 7.5 to 15
cm and a thickness of about 300 μm.

【0008】11は絶縁基板としてのガラス基板を示
し、該ガラス基板11は前記シリコンウエハ10の大き
さと同径、またはそれ以上に大きく形成され、該ガラス
基板11の一側面にはフッ酸等によるガラスエッチング
(ガラスエッチング工程)を行い、矩形状の凹部11A
(2A),11A(2A)が形成されている。
Reference numeral 11 denotes a glass substrate as an insulating substrate. The glass substrate 11 is formed to have the same diameter as or larger than the size of the silicon wafer 10, and one side of the glass substrate 11 is made of hydrofluoric acid or the like. Glass etching (glass etching step) is performed to obtain a rectangular recess 11A.
(2A) and 11A (2A) are formed.

【0009】次に、図14に示す接合工程では、前記シ
リコンウエハ10の他側面とガラス基板11の一側面と
を接合する。
Next, in the bonding step shown in FIG. 14, the other side of the silicon wafer 10 and one side of the glass substrate 11 are bonded.

【0010】次に、図15に示すパターニング工程で
は、シリコンウエハ10に各固定部3と質量部7を形成
するために、シリコンウエハ10の表面であって、各固
定部3と質量部7となる部分に、PCVD法(プラズマ
CVD法)を用いてSiN(またはSiO2)の数μm
の薄膜からなるマスク膜12,12,…を形成する。
Next, in the patterning step shown in FIG. 15, in order to form the fixing parts 3 and the mass parts 7 on the silicon wafer 10, the fixing parts 3 and the mass parts 7 on the surface of the silicon wafer 10 are formed. A few μm of SiN (or SiO 2 ) is
Are formed from the thin films of the above.

【0011】そして、図16に示す第1のエッチング工
程では、シリコンウエハ10の一側面からKOH等によ
るウエットエッチングを行い、シリコンウエハ10を垂
直方向に加工し、各固定部3と質量部7を分離させる。
その後に、KOH等のエッチング液を除去するため純水
による洗浄工程を行い、その後にこの純水を乾燥させる
乾燥工程を行う。
In a first etching step shown in FIG. 16, wet etching using KOH or the like is performed from one side surface of the silicon wafer 10 to process the silicon wafer 10 in a vertical direction. Let it separate.
Thereafter, a cleaning step using pure water is performed to remove an etching solution such as KOH, and then a drying step for drying the pure water is performed.

【0012】さらに、図17に示す第2のエッチング工
程では、一側面からRIE(リアクティブイオンエッチ
ング)を行い、第1のエッチング工程で分離された各固
定部3と質量部7の一側面に残った各マスク膜12を除
去する。
Further, in the second etching step shown in FIG. 17, RIE (reactive ion etching) is performed from one side, and the fixed part 3 and the mass part 7 separated in the first etching step are formed on one side. The remaining mask films 12 are removed.

【0013】かくして、図13ないし図17に示した製
造方法によってガラス基板11上に複数の加速度センサ
1を形成でき、図17の二点鎖線で示す位置(例えばチ
ップ角の大きさ)で切断すれば、一度に複数個の加速度
センサ1を製造することができる。
Thus, a plurality of acceleration sensors 1 can be formed on the glass substrate 11 by the manufacturing method shown in FIGS. 13 to 17, and cut at the position shown by the two-dot chain line (for example, the size of the chip angle) in FIG. For example, a plurality of acceleration sensors 1 can be manufactured at one time.

【0014】このようにして製造された加速度センサ1
は、図10に示す矢示A方向に外部から加速度が加わる
と、質量部7が梁6を介して変位し、該質量部7が左,
右の固定部3,3に対して接近または離間するので、こ
のときの離間寸法の変位を固定電極3Aと可動電極7A
間の静電容量の変化として外部の図示しない信号処理回
路に出力し、該信号処理回路ではこの静電容量の変化に
基づき加速度に応じた信号を出力する。
The acceleration sensor 1 manufactured as described above
When an external acceleration is applied in the direction of arrow A shown in FIG. 10, the mass 7 is displaced via the beam 6, and the mass 7
Since it approaches or separates from the right fixing portions 3 and 3, the displacement of the separation dimension at this time is fixed by the fixed electrode 3A and the movable electrode 7A.
The change in the capacitance between the two is output to an external signal processing circuit (not shown), and the signal processing circuit outputs a signal corresponding to the acceleration based on the change in the capacitance.

【0015】[0015]

【発明が解決しようとする課題】ところで、上述した従
来技術では、固定部3と質量部7を分離形成する第1の
エッチング工程の後に、ガラス基板2やシリコンウエハ
10を純水により洗浄する洗浄工程と、これらを乾燥さ
せる乾燥工程が必要となる。ここで、洗浄工程の後に、
固定部3と質量部7の間に洗浄工程で用いた純水(水)
が残存すると、この水を介して固定部3に質量部7が張
り付き易くなり、また、乾燥工程で水の蒸発に伴い固定
部3と質量部7が接近し、該固定部3と質量部7とが分
離不可能に密着してしまうという問題がある。
In the prior art described above, after the first etching step for separating and forming the fixing part 3 and the mass part 7, the glass substrate 2 and the silicon wafer 10 are cleaned with pure water. A step and a drying step for drying these are required. Here, after the cleaning step,
Pure water (water) used in the washing process between the fixing part 3 and the mass part 7
Remains, the mass part 7 easily sticks to the fixing part 3 via the water, and the fixing part 3 and the mass part 7 approach each other as the water evaporates in the drying step, and the fixing part 3 and the mass part 7 Are inseparable from each other.

【0016】このように固定部3と質量部7が密着して
しまうと、固定電極3Aと可動電極7Aが密着すること
になり、製品として使用できないため、加速度センサ1
の製造の歩留りが低下し、生産性を低下させてしまうと
いう問題がある。
If the fixed portion 3 and the mass portion 7 are in close contact with each other, the fixed electrode 3A and the movable electrode 7A are in close contact with each other and cannot be used as a product.
However, there is a problem that the production yield is lowered and the productivity is lowered.

【0017】本発明は上述した従来技術の問題に鑑みな
されたもので、本発明は洗浄工程,乾燥工程における不
良品の発生を防止でき、歩留りを向上できるようにした
加速度センサを提供することを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to provide an acceleration sensor capable of preventing the occurrence of defective products in a washing step and a drying step and improving the yield. Aim.

【0018】[0018]

【課題を解決するための手段】上記課題を解決するため
に、請求項1の発明が採用する構成は絶縁基板と、該
絶縁基板上に設けられた低抵抗なシリコン板で形成され
た可動部および固定部とを備え、前記可動部は、前記絶
縁基板上に固着された支持部と、該支持部に一端側が連
結された梁と、該梁の他端側に連結され微小隙間を介し
て前記固定部に対向して配置された質量部とからなり、
該質量部は加速度が作用すると該加速度に応じて変位
し、該質量部と前記固定部の対向する面間の静電容量が
変化する加速度センサにおいて、前記質量部と前記固定
部の対向する面のうち少なくとも一方面には、対向する
他方に向けて突出し、略三角錐状に隆起した部分を有
する突起部を一体に設け、前記質量部と前記固定部との
間の微小隙間を確保することを特徴としている。 また、
請求項2の発明は、絶縁基板と、該絶縁基板上に設けら
れた低抵抗なシリコン板で形成された可動部および固定
部とを備え、該固定部は一体に突出形成した複数の薄板
状の電極板を有し、前記可動部は、前記絶縁基板上に固
着された支持部と、該支持部に一端側が連結された梁
と、該梁の他端側に連結され加速度が作用すると該加速
度に応じて変位する質量部とからなり、該質量部は前記
固定部の電極板と微小隙間を介して対向するように一体
に突出形成した複数の薄板状の電極板を有し、前記質量
部の電極板と前記固定部の電極板の対向する面のうち少
なくとも一方面には、対向する他方面に向けて突出し、
略三角錐状に隆起した部分を有する突起部を一体に設
け、前記質量部と前記固定部との間の微小隙間を確保
し、前記質量部の電極板と前記固定部の電極板間の静電
容量の変化を検出する構成としたことにある。
In order to solve the above problems SUMMARY OF THE INVENTION, the configuration of the invention of claim 1 is employed, an insulating substrate and, the
Formed on a low-resistance silicon plate provided on an insulating substrate
A movable section and a fixed section.
A supporting portion fixed on the edge substrate and one end connected to the supporting portion;
Beam and the other end of the beam
And a mass portion arranged opposite to the fixing portion,
The mass part is displaced according to the acceleration when the acceleration acts.
And the capacitance between the mass part and the opposing surface of the fixed part is
In the changing acceleration sensor, the mass part and the fixed part
The at least one surface of the opposing surfaces of the parts, provided projecting towards the opposing <br/> other surface, the projection portion for chromatic <br/> a raised portion in a substantially triangular pyramid shape integral, the mass Between the part and the fixed part
It is characterized by ensuring a minute gap between them. Also,
According to a second aspect of the present invention, there is provided an insulating substrate, and an insulating substrate provided on the insulating substrate.
Moving parts and fixed parts made of low-resistance silicon plate
And a plurality of thin plates formed integrally with the fixing portion.
The movable part is fixed on the insulating substrate.
A supported support and a beam having one end connected to the support
Is connected to the other end of the beam,
Mass part displaced according to the degree, the mass part is
Integrated so that it faces the electrode plate of the fixed part with a small gap
Having a plurality of thin plate-shaped electrode plates protruding from
Of the opposing surfaces of the fixed portion electrode plate and the fixed portion electrode plate.
At least one side protrudes toward the other side,
A projection with a generally triangular pyramid
A small gap between the mass part and the fixed part
And an electrostatic force between the electrode plate of the mass part and the electrode plate of the fixed part.
The configuration is such that a change in capacitance is detected.

【0019】[0019]

【作用】上記請求項1の発明では、乾燥工程で、固定
質量部の間に水が介在しても、突起部のうち略三角錐
状に隆起した部分が相手方の面に点接触して当接し、固
定部と質量部との間に微小隙間が確保されるから、固定
質量部が張り付いたり、乾燥工程で固定部と質量部
間の水の蒸発に伴なって固定質量部が接近し、密
着するのを防止できる。また、請求項2の発明では、質
量部の電極板と固定部の電極板の対向する面のうち少な
くとも一方面には、対向する他方面に向けて突出した、
略三角錐状に隆起した部分を有する突起部を一体に設け
たから、突起部のうち略三角錐状に隆起した部分が相手
方の電極板に点接触して当接し、各電極板間に微小隙間
が確保することができる。このため、固定部の電極板に
質量部の電極板が張り付いたり、密着するのを防止でき
る。
[Action] In the invention described in claim 1, in the drying step, the fixed part
It is interposed water between parts by weight, of a substantially triangular pyramid projection portion
The protruding part is in point contact with the surface of the other
Fixed because a small gap is secured between the fixed part and the mass part
Or parts by mass sticks to part, fixing part and parts by weight in the drying step
As the water evaporates during this time, the fixed portion and the mass portion come close to each other and can be prevented from being in close contact with each other. According to the second aspect of the present invention,
Of the opposing surfaces of the electrode plate of the
At least one side protrudes toward the other side,
Protruding part having a raised part in a substantially triangular pyramid is provided integrally
Therefore, the part of the protrusion that protrudes in a substantially triangular pyramid shape
Point contact with the other electrode plate, and a small gap between each electrode plate
Can be secured. For this reason, the electrode plate of the fixed part
Prevents the mass electrode plate from sticking or sticking
You.

【0020】[0020]

【実施例】以下、本発明の実施例による加速度センサに
ついて、図1ないし図9に基づいて説明する。なお、実
施例では前述した従来技術と同一の構成要素に同一の符
号を付し、その説明を省略するものとする。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An acceleration sensor according to an embodiment of the present invention will be described below with reference to FIGS. In the embodiments, the same components as those of the above-described conventional technology are denoted by the same reference numerals, and description thereof will be omitted.

【0021】まず、図1ないし図7は本発明の第1の実
施例を示している。
FIGS. 1 to 7 show a first embodiment of the present invention.

【0022】図中、21は本実施例による加速度センサ
を示し、該加速度センサ21は従来技術による加速度セ
ンサ1とほぼ同様に、ガラス基板2と、該ガラス基板2
上に設けられた後述する一対の固定部22,22および
可動部24とから大略構成されている。
In the drawing, reference numeral 21 denotes an acceleration sensor according to the present embodiment. The acceleration sensor 21 has a glass substrate 2 and a glass substrate 2 similar to the acceleration sensor 1 according to the prior art.
It is roughly composed of a pair of fixed parts 22 and 22 and a movable part 24 described later provided above.

【0023】22,22は本実施例による固定部を示
し、該各固定部22は前述した従来技術の固定部3とほ
ぼ同様に、単一の低抵抗のシリコンウエハ10から可動
部24と共にエッチング加工によって形成され、該各固
定部22自体が導電性を有し、各固定部22の対向端面
が固定電極22Aとして一体形成されているものの、該
各固定部22には固定電極22Aと同一面に後述する突
起部23,23が一体形成されている。
Reference numerals 22 and 22 denote fixing portions according to the present embodiment. Each of the fixing portions 22 is etched together with the movable portion 24 from a single low-resistance silicon wafer 10 in substantially the same manner as the above-described fixing portion 3 of the prior art. Each of the fixing portions 22 is formed by processing, and each of the fixing portions 22 itself has conductivity, and the opposite end surfaces of the fixing portions 22 are integrally formed as fixed electrodes 22A, but each of the fixing portions 22 has the same surface as the fixed electrode 22A. Are formed integrally with each other.

【0024】23,23は前記各固定部22に突出形成
された突起部を示し、該突起部23は図2,図7に示す
如く、各固定部22の内側端面(固定電極22Aと同一
面)に離間して2個設けられ、各突起部23は一側から
他側に伸長して形成された断面三角形状の柱状部23A
と、該柱状部23Aの他側に位置して後述する質量部2
7側へ隆起する略三角錐状の隆起部23Bとから構成さ
れている。そして、各柱状部23Aおよび隆起部23B
は質量部27側に尖っているため、洗浄工程,乾燥工程
で質量部27がいずれか一方の固定部22側に大きく偏
り変位しても、各柱状部23Aまたは各隆起部23Bが
質量部27の一部に点接触して当接し、各電極間に微小
隙間を確保するようになっている。
Reference numerals 23, 23 denote projections formed on the fixing portions 22. The projections 23 are, as shown in FIGS. 2 and 7, inner end faces of the fixing portions 22 (the same surface as the fixed electrode 22A). ) Are provided at a distance from each other, and each projection 23 extends from one side to the other side and has a columnar portion 23A having a triangular cross section.
And a mass portion 2 described below, which is located on the other side of the columnar portion 23A.
And a substantially triangular pyramid-shaped protruding portion 23B protruding to the seventh side. Then, each columnar portion 23A and the raised portion 23B
Is sharp toward the mass portion 27 side, even if the mass portion 27 is greatly displaced toward one of the fixed portions 22 in the washing step and the drying step, each columnar portion 23A or each raised portion 23B is Are in point contact with each other to secure a minute gap between the electrodes.

【0025】24は本実施例による可動部を示し、該可
動部24は従来技術で述べた可動部4とほぼ同様に、支
持部25,梁26,質量部27とから一体形成され、該
可動部24は前記固定部22と同じ単一の低抵抗のシリ
コンウエハ10からエッチング加工して形成されてい
る。そして、前記質量部27自体は導電性を有し、質量
部27の各固定電極22A側の対向端面は可動電極27
A,27Aとして質量部27と一体形成されている。
Reference numeral 24 denotes a movable portion according to the present embodiment. The movable portion 24 is formed integrally with a support portion 25, a beam 26, and a mass portion 27 in substantially the same manner as the movable portion 4 described in the prior art. The part 24 is formed by etching the same single low-resistance silicon wafer 10 as the fixing part 22. The mass portion 27 itself has conductivity, and the opposed end surfaces of the mass portion 27 on the fixed electrode 22A side are movable electrodes 27.
A and 27A are integrally formed with the mass portion 27.

【0026】28,28は前記質量部27の可動電極2
7Aと同一面から突出形成された他の突起部を示し、該
各突起部28は図2に示す如く、前述した固定部22の
突起部23とほぼ同様に柱状部28Aと隆起部28Bと
からなり、該各突起部28は前記各突起部23間に位置
して質量部27から固定部22側へ突出している。
28, 28 are movable electrodes 2 of the mass part 27;
7A shows other projections projecting from the same plane as FIG. 7A. Each projection 28 is formed from a columnar portion 28A and a raised portion 28B almost in the same manner as the projection 23 of the fixing portion 22 as shown in FIG. The projections 28 are located between the projections 23 and protrude from the mass 27 toward the fixed part 22.

【0027】ここで、前記各突起部23をエッチング加
工によって形成する方法について、図3ないし図7に基
づいて説明する。なお、前述した従来技術による加速度
センサ1の製造方法と同一の工程についての説明は省略
する。
Here, a method of forming each of the projections 23 by etching will be described with reference to FIGS. The description of the same steps as those in the method of manufacturing the acceleration sensor 1 according to the related art described above is omitted.

【0028】まず、図3はパターニング工程を示し、こ
のパターニング工程では、シリコンウエハ10上に従来
技術で述べたようにSiN等のマスク膜29,29,…
を形成するものの、該各マスク膜29には、突起部23
を形成したい箇所に図4に示す如き四角形の凸部29A
を設けるようにしている。
First, FIG. 3 shows a patterning step. In this patterning step, as described in the prior art, mask films 29, 29,.
Are formed, but the projections 23 are formed on each of the mask films 29.
Is formed at a position where a rectangular projection 29A is to be formed as shown in FIG.
Is provided.

【0029】そして、第1のエッチング工程でシリコン
ウエハ10の一側面からKOH等によるウエットエッチ
ングを行い、シリコンウエハ10を垂直方向に加工す
る。
Then, in the first etching step, wet etching with KOH or the like is performed from one side surface of the silicon wafer 10 to process the silicon wafer 10 in the vertical direction.

【0030】このとき、従来技術で述べた通り、各固定
部22,質量部27の側面が(111)面となり、シリ
コンの異方性によってこの(111)面に垂直な方向に
はエッチングされない。
At this time, as described in the related art, the side surfaces of the fixing portions 22 and the mass portions 27 become the (111) plane, and are not etched in the direction perpendicular to the (111) plane due to the anisotropy of silicon.

【0031】しかし、マスク膜29の凸部29Aの角隅
にはシリコンの他の面が現れるため、この面に対して図
5に示す如く(110)面よりも遅れて斜面を形成する
ようにエッチングされ、所定時間のエッチングを行え
ば、図6に示す如く、(111)面から突出するように
柱状部23Aと隆起部23Bとからなる突起部23が形
成される。
However, since another surface of silicon appears at the corner of the convex portion 29A of the mask film 29, the slope is formed so as to lag the (110) plane with respect to this surface as shown in FIG. When the etching is performed for a predetermined period of time, as shown in FIG. 6, a projection 23 composed of a columnar portion 23A and a raised portion 23B is formed so as to project from the (111) plane.

【0032】そして、第2のエッチング工程で一側面か
らRIE(リアクティブイオンエッチング)を行い、固
定部22の一側面に残ったマスク膜29を除去すれば、
図7に示す如く、固定部22の固定電極22Aと同一面
に突起部23が形成される。
Then, RIE (reactive ion etching) is performed from one side in the second etching step, and the mask film 29 remaining on one side of the fixing portion 22 is removed.
As shown in FIG. 7, a protrusion 23 is formed on the same surface of the fixed part 22 as the fixed electrode 22A.

【0033】なお、質量部27にも、各可動電極27A
と同一面に各突起部28が同様にして形成できる。
The movable portion 27A is also provided on the mass portion 27.
Each projection 28 can be formed on the same surface as above.

【0034】そして、従来技術で述べた通り、洗浄工
程、乾燥工程を経て加速度センサ21が製造される。
Then, as described in the prior art, the acceleration sensor 21 is manufactured through a washing step and a drying step.

【0035】本実施例による加速度センサ21は以上の
如き構成を有するもので、その基本的な動作については
従来技術によるものと格別差異はない。
The acceleration sensor 21 according to the present embodiment has the above configuration, and its basic operation is not particularly different from that of the prior art.

【0036】然るに、本実施例では、KOH等によるウ
エットエッチングを行ってシリコンウエハ10を一側面
から垂直方向に加工する際に、シリコンウエハ10上の
マスク膜29に四角形の凸部29Aを設け、固定部2
2,22と質量部27との間に、各固定部22側から質
量部27側に向けて突出する各突起部23と、質量部2
7側から各固定部22側に向けて突出する突起部28と
を形成したから、乾燥工程で固定部22の固定電極22
Aと質量部27の可動電極27Aの間に水が介在して
も、先の尖った各突起部23,28が互いに相手方の電
極表面に当接して微小隙間を確保することができ、この
微小隙間から水を逃がすことにより、固定電極22Aに
可動電極27Aが張り付いたり、乾燥工程で各電極22
A,27A間の水の蒸発に伴なって固定部22と質量部
27が接近し、これらが分離不可能に密着してしまうの
を防止できる。
However, in the present embodiment, when the silicon wafer 10 is vertically processed from one side surface by performing wet etching with KOH or the like, a square convex portion 29A is provided in the mask film 29 on the silicon wafer 10. Fixed part 2
2, 22 and the mass portion 27, each projection 23 projecting from each fixed portion 22 side toward the mass portion 27 side,
And the projections 28 projecting from the side 7 toward the respective fixing portions 22 are formed.
Even if water is interposed between the movable electrode 27A and the movable electrode 27A of the mass portion 27, the sharp projections 23 and 28 abut against each other's electrode surface to secure a minute gap. By allowing water to escape from the gap, the movable electrode 27A sticks to the fixed electrode 22A,
It is possible to prevent the fixed portion 22 and the mass portion 27 from approaching each other as the water evaporates between the portions A and 27A, and to prevent the fixed portion 22 and the mass portion 27 from intimately contacting each other.

【0037】従って、本発明によれば不良品の発生を防
止でき、歩留りを大幅に向上することができる。
Therefore, according to the present invention, the occurrence of defective products can be prevented, and the yield can be greatly improved.

【0038】次に、図8および図9は本発明の第2の実
施例を示し、本実施例の特徴は固定電極および可動電極
にくし状電極を用い、各電極の有効面積を大きくして検
出感度を向上させるようにしたことにある。
Next, FIGS. 8 and 9 show a second embodiment of the present invention. The feature of this embodiment is that a comb-shaped electrode is used for a fixed electrode and a movable electrode, and the effective area of each electrode is increased. This is to improve the detection sensitivity.

【0039】図8において、31は加速度センサ、32
は絶縁基板としてのガラス基板を示し、該ガラス基板3
2には矩形状の凹部32Aが形成され、該ガラス基板3
2上には単一の低抵抗のシリコンウエハからエッチング
加工することにより、後述する固定部33,33および
可動部35が互いに分離して形成されている。
In FIG. 8, reference numeral 31 denotes an acceleration sensor;
Denotes a glass substrate as an insulating substrate, and the glass substrate 3
2 is formed with a rectangular recess 32A.
Fixed portions 33, 33 and a movable portion 35, which will be described later, are formed separately from each other by etching a single low-resistance silicon wafer.

【0040】33,33は一対の固定部を示し、該各固
定部33は前記ガラス基板32の左,右に離間して位置
し、それぞれ対向する内側面には薄板状の電極板34
A,34A,…が複数(例えば5枚)突出形成され、該
各電極板34Aは固定電極としての固定側くし状電極3
4,34をそれぞれ構成している。
Reference numerals 33, 33 denote a pair of fixing portions, each of which is spaced apart to the left and right of the glass substrate 32, and a thin plate-like electrode plate 34
A, 34A,... Are formed in a plurality (for example, five), and each of the electrode plates 34A is a fixed side comb-shaped electrode 3 as a fixed electrode.
4 and 34 respectively.

【0041】35は可動部を示し、該可動部35は、前
記ガラス基板32の前,後に離間してガラス基板32に
固着された支持部36,36と、該各支持部36に梁3
7,37を介して支持され、前記各固定部33の間に配
設された質量部38と、該質量部38から左,右方向に
それぞれ突出形成された複数(例えば5枚)の薄板状の
電極板39A,39A,…を有する可動電極としての可
動側くし状電極39,39とから構成され、前記各梁3
7は質量部38を矢示B方向に変位可能に支持するよう
に薄板状に形成されている。そして、前記各可動側くし
状電極39の各電極板39Aは前記各固定側くし状電極
34の各電極板34Aと微小隙間を介して互いに対向す
るようになっている。
Reference numeral 35 denotes a movable portion. The movable portion 35 is separated from the glass substrate 32 in front of and behind the glass substrate 32 and fixed to the glass substrate 32.
A mass portion 38 supported between the fixing portions 33 and a plurality of (for example, five) thin plate-shaped members protruding left and right from the mass portion 38, respectively; And the movable side comb-shaped electrodes 39, 39 as movable electrodes having the electrode plates 39A, 39A,.
7 is formed in a thin plate shape so as to support the mass portion 38 so as to be displaceable in the direction of arrow B. The electrode plates 39A of the movable comb electrodes 39 are opposed to the electrode plates 34A of the fixed comb electrodes 34 via a minute gap.

【0042】40,40,…は前記固定側くし状電極3
4を構成する各電極板34Aから対向する可動側くし状
電極39側の各電極板39Aに向けて突出形成された突
起部を示し、該各突起部40は前記第1の実施例で述べ
た各突起部23(28)と同様にエッチング加工によっ
て、各電極板34Aの側面から突出するように形成さ
、各電極板39A側へ隆起する略三角錐状の隆起部を
有している。
.., 40, 40,...
4 shows projecting portions protruding from the respective electrode plates 34A constituting the fourth electrode plate 39A on the side of the movable comb-shaped electrode 39 facing each other, and the respective projecting portions 40 are described in the first embodiment. A substantially triangular pyramid-shaped protruding portion which is formed to protrude from the side surface of each electrode plate 34A and protrudes toward each electrode plate 39A by etching as in the case of each protrusion 23 (28).
Have .

【0043】41,41,…は前記可動側くし状電極3
9を構成する各電極板39Aから対向する固定側くし状
電極34側の電極板34Aに向けて突出形成された突起
部を示し、該各突起部41は前記各突起部40と同様に
形成され、各突起部40の間に向けて突出形成され、各
電極板34A側へ隆起する略三角錐状の隆起部を有し
いる。
, 41, 41,...
9 shows protrusions formed so as to protrude from the respective electrode plates 39A constituting the electrode 9 to the electrode plate 34A on the side of the fixed-side comb-shaped electrode 34, and the respective protrusions 41 are formed in the same manner as the respective protrusions 40. , Formed so as to project between the respective projections 40 ,
It has a substantially triangular pyramid-shaped protruding portion protruding toward the electrode plate 34A .

【0044】以上の如く構成される本実施例による加速
度センサ31においても前述した第1の実施例による加
速度センサ21と同様に、エッチング工程の後に洗浄工
程、乾燥工程等を経て製造されるもので、各電極板34
A,39Aに各突起部40,41を設けたことにより、
前記第1の実施例と同様の作用効果を奏することができ
る。特に本実施例の加速度センサ31では、加速度を可
動側くし状電極39および固定側くし状電極34の各電
極板39A,34Aの間の静電容量の変化として検出し
ており、該各電極板39A,34Aはそれぞれ電気的に
並列接続されているから、各電極板39A,34A間の
静電容量を大きな値とすることができ、全体の静電容量
の変化から加速度を検出するときに検出感度を高め、加
速度の検出精度を向上させることができる。
The acceleration sensor 31 according to this embodiment configured as described above is manufactured through a cleaning step, a drying step, etc. after the etching step, similarly to the acceleration sensor 21 according to the first embodiment described above. , Each electrode plate 34
By providing the projections 40 and 41 on A and 39A,
The same operation and effect as those of the first embodiment can be obtained. In particular, in the acceleration sensor 31 of the present embodiment, the acceleration is detected as a change in the capacitance between the electrode plates 39A and 34A of the movable-side comb-shaped electrode 39 and the fixed-side comb-shaped electrode 34. Since the electrodes 39A and 34A are electrically connected in parallel, the capacitance between the electrode plates 39A and 34A can be set to a large value. Sensitivity can be increased and acceleration detection accuracy can be improved.

【0045】なお、前記第1の実施例では、各固定部2
2,質量部27を低抵抗のシリコンウエハ10から形成
することにより、固定電極22Aを固定部22に一体形
成し、可動電極27Aを可動部27に一体形成するもの
として述べたが、本発明はこれに限るものではなく、例
えば各固定部および質量部は高抵抗のシリコンウエハか
ら形成し、各固定部および質量部の対向端面に導電性を
付与する薄膜等を別途設け、固定電極および可動電極を
形成してもよい。
In the first embodiment, each fixing part 2
2. The fixed electrode 22A is formed integrally with the fixed part 22 by forming the mass part 27 from the low-resistance silicon wafer 10, and the movable electrode 27A is formed integrally with the movable part 27. However, the present invention is not limited to this. For example, each fixed portion and mass portion are formed from a high-resistance silicon wafer, and a thin film or the like for imparting conductivity is separately provided on the opposite end surface of each fixed portion and mass portion, and the fixed electrode and the movable electrode are provided. May be formed.

【0046】また、前記各実施例では、固定電極側と可
動電極側の双方に突起部を形成するものとして説明した
が、本発明はこれに限るものではなく、突起部は固定電
極側または可動電極側のいずれか一方に設けてもよい。
In each of the above embodiments, the projections are formed on both the fixed electrode side and the movable electrode side. However, the present invention is not limited to this, and the projections may be formed on the fixed electrode side or the movable electrode side. It may be provided on any one of the electrodes.

【0047】[0047]

【発明の効果】以上詳述した通り、請求項1の発明によ
れば、互いに対向する固定質量部との対向する面の
うち少なくとも一方面には、他方に向けて突出し、
三角錐状に隆起した部分を有する突起部を一体に形成し
たから、加速度センサの製造時において、洗浄工程の後
に固定質量部の間に水が介在した状態で乾燥を行っ
ても、これらの間に設けた突起部のうち略三角錐状に隆
起した部分が他方面に点接触して当接し、固定部と質量
部との間に微小隙間確保することができる。このた
、この微小隙間から水を逃すことによって固定
量部が密着するのを防止でき、不良品の発生を抑えて歩
留りを大幅に向上することができる。また、請求項2の
発明によれば、質量部の電極板と固定部の電極板の対向
する面のうち少なくとも一方面には、対向する他方面に
向けて突出した、略三角錐状に隆起した部分を有する突
起部を一体に設けたから、突起部のうち略三角錐状に隆
起した部分が相手方の電極板に点接触して当接し、各電
極板間に微小隙間が確保することができる。また、各電
極板間の静電容量を大きな値とすることができ、全体の
静電容量の変化から加速度を検出するときに検出感度を
高め、加速度の検出精度を向上させることができる。
As described above in detail, according to the first aspect of the present invention, the opposing surfaces of the fixed portion and the mass portion which oppose each other.
Among the at least one surface, protruding towards the other plane, substantially
Since a protrusion which have a raised portion on the triangular pyramid is formed integrally, at the time of manufacturing the acceleration sensor, even water between the fixed portion and the mass portion after the cleaning process is carried out dry in a state interposed, Of the protrusions provided between them, the protrusions
The raised part is in point contact with the other surface and abuts,
It is possible to secure a minute gap between the parts. others
Because, fixing unit and quality by escape of water from this small gap
It is possible to prevent the mass portions from sticking to each other, to suppress the occurrence of defective products, and to greatly improve the yield. In addition, claim 2
According to the invention, the electrode plate of the mass part and the electrode plate of the fixed part are opposed to each other.
At least one of the surfaces
A protrusion with a generally triangular pyramid-shaped protruding portion
Since the raised part is provided integrally, the protruding part has a substantially triangular pyramid shape.
The raised portion makes point contact with the other electrode plate,
A minute gap can be secured between the electrode plates. In addition, each
The capacitance between the plates can be set to a large value,
When detecting acceleration from changes in capacitance,
The acceleration detection accuracy can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例による加速度センサを示
す斜視図である。
FIG. 1 is a perspective view showing an acceleration sensor according to a first embodiment of the present invention.

【図2】図1中の矢示II−II方向の要部拡大断面図であ
る。
FIG. 2 is an enlarged sectional view of a main part in the direction of arrows II-II in FIG.

【図3】パターニング工程により、シリコンウエハの一
側面にマスク膜を形成した状態を示す拡大断面図であ
る。
FIG. 3 is an enlarged sectional view showing a state in which a mask film is formed on one side surface of a silicon wafer by a patterning process.

【図4】マスク膜を拡大して示す斜視図である。FIG. 4 is an enlarged perspective view showing a mask film.

【図5】第1のエッチング工程で固定部に突起部が形成
される過程を示す拡大斜視図である。
FIG. 5 is an enlarged perspective view showing a process in which a protrusion is formed on a fixing portion in a first etching step.

【図6】固定部に突起部が形成された状態を示す図5と
同様の拡大斜視図である。
FIG. 6 is an enlarged perspective view similar to FIG. 5, showing a state in which a protrusion is formed on a fixing portion.

【図7】第2のエッチング工程で固定部からマスク膜を
除去した状態を示す図5と同様の拡大斜視図である。
FIG. 7 is an enlarged perspective view similar to FIG. 5, showing a state in which a mask film has been removed from a fixing portion in a second etching step.

【図8】本発明の第2の実施例による加速度センサを上
からみた拡大平面図である。
FIG. 8 is an enlarged plan view of an acceleration sensor according to a second embodiment of the present invention as viewed from above.

【図9】図8中の要部拡大図である。FIG. 9 is an enlarged view of a main part in FIG.

【図10】従来技術による加速度センサの全体を示す斜
視図である。
FIG. 10 is a perspective view showing an entire acceleration sensor according to the related art.

【図11】図10に示す加速度センサを上からみた拡大
図である。
FIG. 11 is an enlarged view of the acceleration sensor shown in FIG. 10 as viewed from above.

【図12】図11中の矢示 XII−XII 方向断面図であ
る。
12 is a sectional view taken in the direction of arrows XII-XII in FIG. 11;

【図13】加速度センサを製造するシリコンウエハおよ
びガラス基板を示す縦断面図である。
FIG. 13 is a longitudinal sectional view showing a silicon wafer and a glass substrate for manufacturing the acceleration sensor.

【図14】接合工程により、シリコンウエハの一側面と
ガラス基板とを接合させた状態を示す縦断面図である。
FIG. 14 is a longitudinal sectional view showing a state in which one side surface of a silicon wafer and a glass substrate are joined by a joining step.

【図15】パターニング工程により、シリコンウエハの
一側面にマスク膜を形成した状態を示す縦断面図であ
る。
FIG. 15 is a longitudinal sectional view showing a state where a mask film is formed on one side surface of a silicon wafer by a patterning step.

【図16】第1のエッチング工程により、シリコンウエ
ハを固定部と質量部に分離した状態を示す縦断面図であ
る。
FIG. 16 is a longitudinal sectional view showing a state where the silicon wafer is separated into a fixed part and a mass part by a first etching step.

【図17】第2のエッチング工程により、固定部と質量
部の一側面からマスク膜を除去した状態を示す縦断面図
である。
FIG. 17 is a longitudinal sectional view showing a state where the mask film has been removed from one side surface of the fixed part and the mass part in the second etching step.

【符号の説明】[Explanation of symbols]

21,31 加速度センサ 2,32 ガラス基板(絶縁基板) 2A,32A 凹部 10 シリコンウエハ(シリコン板) 22,33 固定部 22A 固定電極 23,28,40,41 突起部 23A,28A 柱状部 23B,28B 隆起部 24,35 可動部 25,36 支持部 26,37 梁 27 質量部 27A 可動電極 34 固定側くし状電極(固定電極) 38 質量部 39 可動側くし状電極(可動電極) 21, 31 Acceleration sensor 2, 32 Glass substrate (insulating substrate) 2A, 32A Concave portion 10 Silicon wafer (silicon plate) 22, 33 Fixing portion 22A Fixed electrode 23, 28, 40, 41 Projecting portion 23A, 28A Columnar portion 23B, 28B Raised portion 24, 35 Movable portion 25, 36 Supporting portion 26, 37 Beam 27 Mass 27A Movable electrode 34 Fixed-side comb-shaped electrode (fixed electrode) 38 Mass 39 Combined movable-side electrode (movable electrode)

フロントページの続き (56)参考文献 特開 平4−116465(JP,A) 特開 平4−244968(JP,A) 特開 平4−115165(JP,A) 特開 平4−232875(JP,A) 特開 平5−94937(JP,A) 特開 平3−146872(JP,A) 特開 平6−151889(JP,A) 特表 平4−504003(JP,A) (58)調査した分野(Int.Cl.7,DB名) G01P 15/08 - 15/125 Continuation of front page (56) References JP-A-4-116465 (JP, A) JP-A-4-244968 (JP, A) JP-A-4-115165 (JP, A) JP-A-4-232875 (JP) JP-A-5-94937 (JP, A) JP-A-3-1486872 (JP, A) JP-A-6-151889 (JP, A) Table 4-4-504003 (JP, A) (58) Field surveyed (Int.Cl. 7 , DB name) G01P 15/08-15/125

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 絶縁基板と、該絶縁基板上に設けられ
低抵抗なシリコン板形成された可動部および固定部と
を備え 記可動部は、前記絶縁基板上に固着された支持部と、
該支持部に一端側が連結されたと、該梁の他端側に
結され微小隙間を介して前記固定部に対向して配置され
質量部とからなり、 該質量部は加速度が作用すると該加速度に応じて 変位
し、該質量部と前記固定部の対向する面間の静電容量が
変化する加速度センサにおいて 前記質量部と前記固定部の対向する面のうち 少なくとも
一方面には、対向する他方に向けて突出し、略三角錐
状に隆起した部分を有する突起部を一体に設け、前記質
量部と前記固定部との間の微小隙間を確保することを特
徴とする加速度センサ。
1. An insulating substrate, and an insulating substrate provided on the insulating substrate .
And a movable portion and a fixed portion formed of a low resistance silicon plate, front Symbol movable portion, a support portion fixed to the insulating substrate,
A beam whose one end is connected to the support portion, is disposed opposite to the fixed portion through the fine small clearance is communicated <br/> forming the other end of the beams
Mass part, and when the acceleration acts , the mass part is displaced in accordance with the acceleration.
And the capacitance between the mass part and the opposing surface of the fixed part is
In the acceleration sensor changes, on at least one surface of the opposing surfaces of the fixed portion and the weight portion protrudes toward the other surface facing, substantially triangular pyramid
A protrusion which have a raised portion on Jo provided integrally, the quality
An acceleration sensor , wherein a minute gap is secured between a measuring part and the fixed part .
【請求項2】 絶縁基板と、該絶縁基板上に設けられた
低抵抗なシリコン板で形成された可動部および固定部と
を備え、 該固定部は一体に突出形成した複数の薄板状の電極板を
有し、前記可動部は、前記絶縁基板上に固着された支持
部と、該支持部に一端側が連結された梁と、該梁の他端
側に連結され加速度が作用すると該加速度に応じて変位
する質量部とからなり、 該質量部は前記固定部の電極板と微小隙間を介して対向
するように一体に突出形成した複数の薄板状の電極板を
有し、 前記質量部の電極板と前記固定部の電極板の対向する面
のうち少なくとも一方面には、対向する他方面に向けて
突出し、略三角錐状に隆起した部分を有する突起部を一
体に設け、前記質量部と前記固定部との間の微小隙間を
確保し、前記質量部の電極板と前記固定部の電極板間の
静電容量の変化を検出する構成としてなる 加速度セン
サ。
2. An insulating substrate, and an insulating substrate provided on the insulating substrate.
Movable and fixed parts made of low resistance silicon plate
The fixing portion comprises a plurality of thin plate-like electrode plates integrally formed so as to protrude.
The movable part has a support fixed on the insulating substrate.
Part, a beam having one end connected to the support part, and the other end of the beam
When the acceleration acts, it is displaced according to the acceleration
Mass part which faces the electrode plate of the fixed part via a minute gap.
To form a plurality of thin plate-shaped electrode plates
Has, opposing surfaces of the fixed portion of the electrode plate and the electrode plate of the mass portion
At least on one side, facing the other side
One projection that has a portion that protrudes and is
Provided on the body, the minute gap between the mass part and the fixed part
Secure and between the electrode plate of the mass part and the electrode plate of the fixed part
An acceleration sensor configured to detect a change in capacitance .
JP16315893A 1993-06-07 1993-06-07 Acceleration sensor Expired - Fee Related JP3189506B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16315893A JP3189506B2 (en) 1993-06-07 1993-06-07 Acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315893A JP3189506B2 (en) 1993-06-07 1993-06-07 Acceleration sensor

Publications (2)

Publication Number Publication Date
JPH06347474A JPH06347474A (en) 1994-12-22
JP3189506B2 true JP3189506B2 (en) 2001-07-16

Family

ID=15768339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315893A Expired - Fee Related JP3189506B2 (en) 1993-06-07 1993-06-07 Acceleration sensor

Country Status (1)

Country Link
JP (1) JP3189506B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6199430B1 (en) 1997-06-17 2001-03-13 Denso Corporation Acceleration sensor with ring-shaped movable electrode
US6048774A (en) * 1997-06-26 2000-04-11 Denso Corporation Method of manufacturing dynamic amount semiconductor sensor
US6065341A (en) * 1998-02-18 2000-05-23 Denso Corporation Semiconductor physical quantity sensor with stopper portion
JP2000206142A (en) 1998-11-13 2000-07-28 Denso Corp Semiconductor dynamic quantity sensor and its manufacture
US6105428A (en) 1998-12-10 2000-08-22 Motorola, Inc. Sensor and method of use
JP4238437B2 (en) 1999-01-25 2009-03-18 株式会社デンソー Semiconductor dynamic quantity sensor and manufacturing method thereof
JP2002228680A (en) 2001-02-02 2002-08-14 Denso Corp Capacity-type mechanical amount sensor
JP5316479B2 (en) 2009-06-09 2013-10-16 株式会社デンソー Manufacturing method of semiconductor dynamic quantity sensor and semiconductor dynamic quantity sensor
JP2016144261A (en) 2015-01-30 2016-08-08 ソニー株式会社 Electrostatic actuator and switch

Also Published As

Publication number Publication date
JPH06347474A (en) 1994-12-22

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