JPH0790575A - Sputtering film forming device, method for forming plural-layer film and device therefor - Google Patents

Abstract

PURPOSE:To surely improve the traveling of a sputtered grain in a straight line by specifying the gas pressure in a sputtering chamber and allowing a sputtering electrode to generate an electric discharge within the limits of the gas pressure. CONSTITUTION:This sputtering film forming device is provided with a sputtering electrode 11, a target 15 to be sputtered by the electrode and a substrate 13 opposed to the target and on which a film is formed by depositing the sputtered grain at a desired position. A directional filter 12 is furnished between the target 15 and substrate 13 to direct the sputtered grain. These members are placed in a sputtering chamber 1. The chamber 1 is kept at a specified sputtering gas pressure by a gas introducing means 17. The gas pressure in the chamber 1 is controlled to 1X10<-5> to 10<-2>Torr to allow the electrode 11 to generate an electric discharge within the limits of the gas pressure. As a result, a component to be adhered to the filter is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering film forming apparatus for forming a film with a predetermined thickness on a contact hole of a semiconductor wafer by sputtering, and to efficiently form a plurality of layers using the sputtering film forming apparatus. The present invention relates to a multi-layer film forming method and an apparatus therefor, and more particularly to a device having a filter member that imparts directivity to sputtered particles (film-forming particles).

[0002]

2. Description of the Related Art In a wiring forming process for a 64 Mb DRAM and thereafter, as shown in FIG.
1 is often used, but a tungsten film 32 is formed by a sputtering method as a base film of the wiring film 31. Tungsten film 32 formed by this sputtering
Must be uniformly formed at the bottom of the through hole 33 having a steep shape that is recessed at right angles to the wafer and has a depth. For this reason, in the conventional sputtering apparatus, a filter is provided between the wafer and the sputter target, and the sputtered particles pass through the filter to give directivity to the sputtered particles. There is one in which 33 is uniformly attached not only to the bottom portion but also to the side wall thereof to obtain a uniform film as a base film. In this case, as the sputter electrode, a planar magnetron type is generally used, which can obtain a high film formation rate because a high power can be applied at a relatively low voltage and can also obtain a high film thickness uniformity in the wafer. It is used. This electrode requires an inert gas pressure (for example, Ar gas) of the order of mTorr as a gas pressure for obtaining stable plasma operation.

[0003]

By the way, in the sputter film forming apparatus described above, when a filter for giving directivity to sputtered particles is used, the sputtered particles are significantly attached to the filter. There is a problem that the film forming rate is reduced to 1/10 or less as compared with the above. That is, in other words, 9/10 of the sputtered particles are attached to the filter. Further, the sputtered particles attached to the filter are peeled off and are generated as foreign matter on the wafer due to the peeling off, which causes a problem of lowering the yield. In order to solve this problem, when the degree of foreign matter generation exceeds a certain reference value, it is necessary to replace the filter or perform maintenance. However, even if the device is replaced or maintained, the device will be stopped each time, so that there is a problem that the operating rate of the device is reduced by that much, and as a result, the productivity is significantly reduced.

In view of the above-mentioned problems of the prior art, the object of the present invention is to suppress the reduction of the film forming rate and to prevent the productivity from being reduced even if a directional filter is used. Another object of the present invention is to provide a film forming apparatus, and another object of the present invention is to provide a multi-layer film forming method capable of surely forming a base film by sputtering and a CVD film formed thereon in a good state. And, it is still another object to provide a multi-layer film forming apparatus capable of accurately implementing the above method.

[0005]

In a sputtering film forming apparatus of the present invention, a sputter electrode, a target on which sputtered particles fly by the sputter electrode, and a position facing the target are provided, and the sputtered particle is placed at a desired position. Target substrate for depositing and depositing a film, a directional filter installed between the target and the target substrate for imparting directivity to sputtered particles from the target, the sputter electrodes, the target, and the target substrate for film deposition A sputtering chamber for accommodating each of the directional filters and a gas introduction unit for maintaining the inside of the sputtering chamber at a predetermined sputtering gas pressure, and the gas pressure in the sputtering chamber is 1 × 10 -5 to 10 -3.
The pressure is set to Torr, and the sputtering electrode is configured to be capable of discharging within the range of its gas pressure.

[0006]

In the present invention, the sputter gas pressure is set to 1 as described above.
Since the pressure is set to × 10 -5 to 10 -3 Torr and lower than that of the planar magnetron sputter electrode, the mean free path of the molecules of the gas pressure becomes longer, so that before the sputtered particles pass through the directional filter, of course. In addition, it can prevent collision with gas molecules during or after the passage. In particular, it is possible to prevent the sputtered particles aligned by the directional filter from colliding with the molecules of the sputter gas pressure. That is, the sputtered particles that have passed through the directional filter are
Since it is rarely scattered by the molecules of the sputter gas, compared to when the sputter gas pressure is high, the straightness of the sputter particles can be reliably improved, and many components fly straight from the target to the film formation target substrate. In addition, the component attached to the directional filter can be reduced.

[0007]

Embodiments of the present invention will be described below with reference to FIGS. 1 to 4 show a first embodiment of a sputtering film forming apparatus according to the present invention. The sputter film forming apparatus of the embodiment shown in FIGS. 1 and 2 includes a sputter electrode 11 and a target 1 sputtered by the sputter electrode 11.
5, a silicon wafer 13 made of, for example, 64 DbRAM or the like as a film formation target substrate, and a directional filter 12 provided between the silicon wafer 13 and the target 15 for imparting directivity to sputter particles. It is arranged at a predetermined position in the chamber 1. Also,
An exhaust port 16 and a gas introduction port 17 are connected to the sputter chamber 1, and at the time of sputtering, the inside of the sputter chamber 1 is evacuated to a high vacuum (about 10 ^-7 To) by a vacuum exhaust unit (not shown) through the exhaust port 16.
rr) or less) and Ar is introduced into the sputtering chamber 1 through the gas introduction port 17 by a gas supply means (not shown).
A gas is supplied so that the inside of the sputtering chamber has a predetermined pressure. Therefore, it is configured to also have a vacuum exhaust means and a gas supply means. The target 15 is installed on the outer peripheral side of the sputter electrode 11 and is made of a tungsten material. The directional filter 12 has a thickness of about 1 cm along the flight direction of the sputtered particles, and the opening through which the sputtered particles pass is formed in a cross beam shape of about 1 cm square.

By the way, the directional filter 12 is mounted on the wafer 1.
When the position is far from 3, the probability of collision of the sputtered particles with the sputter gas increases after passing through the directional filter 12 and reaching the wafer 13, so that the directivity of the range of the sputtered particles decreases. To do. Therefore, in order not to reduce the directivity, the directional filter 12 may be brought closer to the wafer 13 on the contrary. At that time, if the directional filter 12 is brought too close to the wafer 13, the directional filter 12 may cause the wafer to move. The formation of the shadow causes a difference in film thickness distribution. Therefore, in order to ensure the uniformity of the film thickness distribution, it is important to consider the positional relationship among the directional filter 12, the wafer 13 and the target 13. In this example, the distance between the target 15 and the wafer 13 is 10c.
m and the position of the directional filter 12 is 3 cm away from the wafer 13 so that the film thickness distribution is uniform.

Further, the sputtering gas pressure by the gas supply means is set to be lower than that in the case of the planar magnetron sputtering electrode, and the sputtering electrode 11 is configured to be capable of discharging at the low sputtering gas pressure. That is, in general, the lower the gas pressure for plasma discharge is, the longer the mean free path of molecules becomes, and the lower the probability that the sputtered particles collide with the molecules of the gas and fly during the flight from the target 15 to the wafer 13. Therefore, the dischargeable gas pressure of the sputter electrode 11 is 10 ⁻⁵ to 10 ⁻³ Tor.
It is r. The sputter electrode 11 is of a cylindrical magnetron type and can surely discharge at a lower Ar gas pressure than the planar magnetron sputter electrode.

In such a sputtering film forming apparatus, the inside of the sputtering chamber 1 is evacuated to a high vacuum by the vacuum evacuation means, and then the Ar gas having a predetermined pressure is introduced into the sputtering chamber 1 by the gas supply means, and in the atmosphere thereof. When sputtering by turning on DC power to the sputter electrode,
Sputtered particles from the target 15 fly as shown by the thin arrows in FIG. 1, and the flying sputtered particles collide with and adhere to the directional filter 12, while other sputtered particles passing through the directional filter 12 As shown in the figure, the film is attached to the wafer 13 to form a film. In this case, the sputtered particles collide with gas molecules before, during, and after passing through the directional filter 12, so that the flight direction thereof is scattered as shown by the thin line in FIG. It may decrease significantly. However, in the embodiment, as described above, the Ar gas pressure is set to be lower than that in the case of a normal planar magnetron sputtering electrode, and the mean free path of molecules of the Ar gas pressure becomes long,
It is possible to prevent the sputtered particles from colliding with gas molecules not only before passing through the directional filter 12 but also during or after passing through the directional filter 12. It may prevent collisions with pressure molecules. That is, since the sputtered particles that have passed through the directional filter 12 are hardly scattered by the Ar gas molecules, the straightness of the sputtered particles can be surely improved as compared with the case where the sputtered gas pressure is high, and the target 15 The number of components that fly linearly from the substrate to the wafer 13 increases, and the components that adhere to the directional filter 12 can be reduced. Actually, the sputtered particles collide with each other and the flight direction of the sputtered particles is also scattered by this collision, but since the scattering action of the sputtered particles exists regardless of the magnitude of the Ar gas pressure, in that case Shall not be considered. By the way, in the case of the conventional planar magnetron sputter electrode (about 2 m
At 0.2 mTorr, which is about 1/10 of Torr), the mean free path of Ar gas molecules is calculated to be 10 times (about 25 mm → about 250 mm), which is considerably long. Table 1 below shows the results of comparison of unnecessary deposition of sputtered particles on the directional filter 12 at the film formation rate.

[0011]

[Table 1]

According to Table 1 above, the sputtering electrode 11 is
When sputtered at r gas pressure of 2 mTorr, 200 nm at 3 kW of sputter electrode without directional filter 12.
/ Min, and when the directional filter 12 is installed between the target 15 and the wafer 13, it becomes 20 nm / min,
It turns out that it becomes 1/10 when compared without a filter. On the other hand, when the Ar gas pressure is reduced to 0.2 mTorr, the film formation rate becomes 20 nm / min at the same input power without the directional filter 12, and the Ar gas pressure becomes 2 mT.
Although the result was the same as in the case of orr, it was found that even when the filter 12 was installed, the film formation rate was 50 nm / min, which was 1/4 compared with the case without the filter, and a film formation rate 2.5 times faster was realized. Therefore, the Ar gas pressure is 2 mTorr, 0.
In the case of 2 mTorr, since the particles adhere to the directional filter 12 at the ratios of 9/10 and 3/4, the ratio of the ratio of the sputtered particles adhered to the filter 12 is (3/4) / (9 /
10). Furthermore, since the Ar gas pressure can be reduced to 1/10, the film formation rate can be improved by 2.5 times, and the number of wafers that can be processed within the time of adhering to the filter is 2.5 times. Therefore, if the film thickness deposited on a single wafer is constant, the time required for yawing per wafer is halved, so the ratio of the rate of adhesion to the filter when processing one wafer is: (3/4) / (9/10)
/2.5=1/3. In other words, when the number of processed wafers is the same, the maintenance interval of the filter will be tripled.

Here, FIG. 3 shows the transition of the foreign matter density with respect to the number of processed wafers. In the figure, reference numerals 41 and 42 represent cases where the Ar gas pressures are 2 mTorr and 0.2 mTorr, respectively, and the vertical axis represents arbitrary units when the allowable limit value (43) of the foreign matter density is 1. Ar gas pressure is 2m
In the case of Torr, the density of foreign matter exceeds the allowable limit value around the processing of 500 wafers, whereas Ar
When the gas pressure is 0.2 mTorr, the density of the foreign matter reaches the allowable limit value in the vicinity of slightly over 1000 sheets. Therefore, it can be seen that the number of processed wafers is almost doubled. Although it is calculated that the maintenance interval is tripled, the reason why the number of processed sheets is not tripled is that the parts other than the directional filter 12 (for example, the wafer holder 18).
This is because the foreign matter generated from the above is not improved even if the straightness of the sputtered particles is improved. However, as is clear from the result of FIG.
By using the sputter electrode 11 capable of discharging even at a low Ar gas pressure such as 0.2 mTorr, the directional filter 12 can be obtained.
The maintenance interval can be reliably extended.

FIG. 4 shows a through hole A of the same shape.
The figure shows the case where the r gas pressure is changed.
From FIG. 4, when the Ar gas pressure is 2 mTorr, if the directional filter 12 is not used, a large overhang shape is formed at the upper end portion of the through hole as shown in FIG. Since the opening area of the through hole is small, it can be seen that there is almost no film formation on the bottom of the through hole. Further, in FIG. 4B, it can be seen that the gas pressure is the same as that in FIG. 4A and the directional filter 12 is used, and the overhang shape is slightly formed. In FIG. 4C, it is understood that the Ar gas pressure is 0.2 mTorr and the directional filter 12 is used, and almost no overhang shape is generated. The ratio of the minimum film thickness at the bottom of the through hole to the so-called general film thickness on a flat portion other than the through hole is called throwing power. This throwing power is Ar as shown in FIG. When the gas thickness is 2 mTorr and the filter is not used, the value is 0.05, and when the gas pressure is the same as shown in FIG. 7B and the filter is used, the value is 0.3, and 0 as shown in FIG. .2 mTorr
In addition, when the filter is used, the value is 0.5, and the higher the value, the better the film thickness can be obtained.

5 to 8 show other examples of the sputtering film forming apparatus according to the present invention. The embodiment shown in FIG. 5 has basically the same configuration as that of the first embodiment, and is different from the first embodiment in that the shape of the sputter electrode 51 is different. That is, the sputter electrode 51 shown in FIG. 5 is formed in an oval shape (substantially elliptical) having a flat surface 51 ′ facing the wafer 13 which is the substrate for film formation.
Therefore, the target 52 provided on the outer peripheral side also corresponds to the sputter electrode 51 and has an oval shape. In general,
Even if the sputtering electrode 11 of the first embodiment has a perfect circular shape, if the distance between the target and the wafer is set to a suitable distance, the uniformity of the wafer can be obtained. However, as described above, when both the sputter electrode 51 and the target 52 have the flat surface 51 ′ facing the wafer 13 and the area of the flat portion is increased, the flying property of sputtered particles to the wafer 13 is improved, and Even if the distance between the target 52 and the wafer 13 is further shortened, the uniformity of the film thickness distribution can be obtained. Incidentally, Table 2 shows a comparison between the distance between the target and the wafer and the film-forming speed according to the distance, using a wafer having a diameter of 6 inches.

[0016]

[Table 2]

According to Table 2 above, when the allowable range of the film thickness distribution is ± 5%, the distance between the target and the wafer is 10 cm for the perfect circular target electrode 11 as in the first embodiment. On the other hand, the target electrode 51 having an oblong shape as in this example had a length of 6 cm. Further, the film forming rates at the same input power (3 kW) as in the case of the first embodiment are 50 nm / min and 110 nm, respectively, as the distance becomes shorter.
I was able to improve with / minutes.

The embodiment shown in FIG. 6 is for improving the uniformity of the film thickness distribution within the wafer. That is, as one of them, the magnet 5 for generating the magnetic field of the sputtering electrode is used.
A plurality of 1a and 51b are provided along the axial direction (the surface facing the wafer 13), and the plasma 19 generated by the magnetic force of these is expanded in the outer peripheral direction of the sputter electrode 51 to increase the spouting particle ejection area. I have to. As the second, although not shown, means for moving the magnets 51a, 51b is provided, and the magnets 51a, 51b are moved by the moving means in the axial direction of the sputtering electrode 51 as shown by an arrow 71. There is. Thirdly, a driving means is connected to the wafer holder 18 on which the wafer 13 is mounted, and the wafer holder 18 and the wafer 13 are moved by the driving means along the axial direction of the sputter electrode 51 as shown by an arrow 72 in the drawing, or in the drawing. As shown by an arrow 73, the sputter electrode 51 is rotated about its axis on a plane parallel to the axial direction. If at least one of the above 1 to 3 is adopted, the film thickness of the film formed on the wafer 13 can be made uniform. In addition to the above-mentioned one to three, when the directional filter 12 is reciprocally moved by an unillustrated means as indicated by an arrow 74 or rotated by an unillustrated means as indicated by an arrow 75, the directional filter 12 causes a shadow on the wafer 13. It is possible to solve the problem that the film thickness of the portion where the difference occurs is not uniform. In the embodiment shown in FIG. 6, there is no problem even if a permanent magnet or an electromagnet coil is used as a magnetic field generating means.

In the embodiment shown in FIG. 7, the magnets 51a and 51b for generating a magnetic field are displaced away from the wafer 13. That is, the magnets 51a and 51b are connected by the connecting rod 81 along the axial direction of the sputter electrode 51, and at the sputter electrode 51, the wafer 1 of the target 52 is attached.
The distance 85 between the surface facing the wafer No. 3 and the surface facing the wafer 3 is a distance 86 between the wafer 52 of the target 52 and the other surface (the surface not facing).
Arrange to be larger. Then, as shown in the drawing, the plasma 82 is generated on the side of the target 52 facing the wafer 13 and the plasma 83 is generated on the side of the target 52 opposite to the wafer 13 by the magnetic field.
The impedance on the side of the plasma 82 becomes higher than that on the side of the plasma 83, and as a result, the film formation rate on the side facing the wafer 13 becomes higher than that on the side not facing the wafer 13. There is. Therefore, the portion of the target 52 facing the wafer 13 can be effectively utilized.

In the embodiment shown in FIG. 8, the sputter electrode 51 is used.
Is formed into an elliptical shape (or an oval shape), and the target 52 is also formed into a shape corresponding to the sputter electrode 51.
52 'is provided. Then, the two flat parts 52 ', 52'
Two sets of wafers 13 and 13 'and directional filters 12 and 12' are arranged so as to face each other. As a result, it is possible to simultaneously form a film on the two sets of wafers 13 and 13 ', so that the utilization efficiency of the target 52 can be improved. In this case, the target 52 corresponds to the sputter electrode 51 and the flat surface portion 52 '.
Therefore, it is possible to improve the uniformity of the film thickness of the film formed in the same manner as in the embodiment shown in FIG. In addition, such two sets of wafers 1
In the structure having 3,3 'and the directional filters 12, 12', when the sputter electrode and the target have a perfect circle shape, the wafer and the directional filter can be respectively arranged in four directions around the sputtering electrode and the target to form a film. Becomes

FIG. 9 shows an embodiment of a multi-layer film forming apparatus for carrying out the multi-layer film forming method according to the present invention. In this embodiment of the multi-layer film forming apparatus, a supply chamber 108 for supplying a wafer as a film formation target substrate, a supply / discharge chamber 101 provided with an unloading chamber 107, and a pretreatment chamber 102 for cleaning a wafer necessary for film formation. A sputtering chamber 103 for forming a base film on the cleaned wafer by sputtering,
CVD for forming a CVD film on a wafer on which a base film is formed
A chamber 104, a transfer chamber 105 that communicates with the supply / discharge chamber 101, the pretreatment chamber 102, the sputtering chamber 103, and the CVD chamber 104, and that has a transfer robot 106 that transfers a wafer to each of the chambers 101 to 104. Each room 101-
And a vacuum means (not shown) for evacuating 105. In the sputtering chamber 103, the wafer 13 mounted on the wafer holder 18 and the directional filter 1
2, a sputter film forming apparatus including a sputter electrode 51, a target 52, etc. is built in, and during sputtering, the Ar gas pressure as sputter gas is set to a low pressure such as 10 ⁻⁵ to 10 ⁻³ , and the low pressure atmosphere Sputtering electrode 5
1 so that sputtering can be performed. The sputtering film forming apparatus is not limited to the illustrated example, but may be the one shown in FIG. 1 or the one shown in FIGS. When the wafer 13 is supplied to the supply chamber 108 of the supply / discharge chamber 101, the wafer 13 is transferred by the transfer robot 106 to the pretreatment chamber 102 via the transfer chamber 105, and a predetermined cleaning is performed in the pretreatment chamber 102. When the process is completed, the transfer robot 106 transfers the wafer 13 from the pretreatment chamber 102 to the sputtering chamber 103, and the sputtering chamber 1
In 03, a predetermined film thickness (about 100 nm) of, for example, tungsten is formed on the wafer 13 as a base film of the main wiring film. After that, the wafer 13 is transferred from the sputtering chamber 103 to the CVD chamber 104 by the transfer robot 106, and a tungsten film serving as a main wiring film is formed on the wafer 13 to a predetermined film thickness (about 400 nm).
3 is returned to the supply / discharge chamber 101 by the transfer robot 106 to take out the film-formed wafer 13. Hereinafter, the film formation on the wafer 13 can be continuously performed by repeatedly executing the above operation. Sputtering film forming device and C
When the VD apparatus is operated independently, it is necessary to individually manage the number of apparatuses and processes according to the maintenance intervals of the respective apparatuses, and therefore the maintenance intervals are short as in the conventional sputtering film forming apparatus. In the apparatus, there is a problem that the operating rate is lowered as described above, and further, the sputter film forming apparatus having a short maintenance interval cannot be directly combined with the CVD apparatus. In this embodiment, since the maintenance interval of the directional filter 12 in the sputter film forming apparatus can be extended as in the above-described embodiments, the sputter film forming apparatus and the CVD apparatus can be combined as described above. Thereby, the main wiring film can be continuously formed. Further, since the throwing power of the base film can be improved by the sputtering film forming apparatus (see FIG. 4), the film forming process of the CVD film formed thereon can be facilitated. The base film not only functions as an adhesive between the CVD film and the underlying material, but also eliminates a current leakage defect caused by the CVD gas eroding the underlying material of the underlying film during the formation of the CVD film. It also functions. By improving the throwing power, it is possible to improve the characteristics of the barrier film that prevents the erosion reaction, and eventually, the yield can be improved. Furthermore, if the formation of the base film and the formation of the CVD film are performed by independent devices as in the conventional case, the wafer is exposed to the atmosphere during the transfer between the two devices, and thus an indeterminate base film is formed. A natural oxide film with an indefinite thickness is formed. The natural oxide film causes a delay in the induction time of the nucleation of the CVD reaction, and variations in the oxide film thickness increase variations in the finally formed CVD film thickness. In this embodiment, as described above, the sputtering chamber 103 and the CVD chamber 104 are kept in a vacuum state, and the wafer can be transferred between the two chambers by the transfer robot 106. Therefore, the film thickness of the native oxide film formed after the base film is formed. Can be suppressed to be extremely thin, and stable and high quality film formation can be realized.

FIG. 10 shows another embodiment of the multi-layer film forming apparatus for carrying out the multi-layer film forming method according to the present invention. This embodiment differs from the embodiment shown in FIG. 9 in that a detecting means for detecting the maintenance time of the directional filter and an exchanging mechanism for exchanging the directional filter when the detecting means detects it are provided. In point. That is, the detection means measures the current flowing through the target 52 and detects the voltage based on the current, and the sensor 110.
The control unit 111 determines the size of the sputtered particles adhering to the directional filter 12 based on the magnitude of the detection of 10. Although the exchange mechanism is not shown in detail, a rotating body 112 having a plurality of directional filters 12 attached thereto,
It comprises a driving body 113 which drives the rotating body and positions a desired directional filter on the rotating body 112 between the wafer 13 and the target 52. Then, based on the detection of the sensor 110, the control unit 111 determines that the amount of sputtered particles for the directional filter 12 currently used exceeds the reference value, and drives the rotating body 112 via the driving body 113 of the exchange mechanism. By doing so, the used directional filter 12 is retracted from between the wafer 13 and the target 52, and the unused directional filter in the clean state is positioned between the wafer 13 and the target 52. Then, the retracted directional filter is removed and cleaned to be attached to the rotating body 112 as a spare directional filter. This is because the current flowing through the target 52 changes as the amount of sputtered particles attached to the directional filter 12 increases. Therefore, according to this embodiment, when the directional filter 12 being used reaches the maintenance time, it is retracted and another clean directional filter is positioned, so that not only the directional filter replacement time is required. Since the replacement can be automated, there is no need to manage each maintenance period. Moreover, since the exchange mechanism including the rotating body 112 and the driving body 113 is installed in the sputtering chamber 103, the exchange of the directional filter can be performed while maintaining the vacuum state, and the thickness is such that the underlying film is adversely affected. There is no possibility of forming a natural oxide film.

[0023]

As described above, according to the first and second aspects of the present invention, the sputtering gas pressure is set lower than that of the planar magnetron sputtering electrode, and the mean free path of the molecules of the gas pressure becomes longer. Since it is configured as described above, it is possible to prevent the sputtered particles from colliding with gas molecules not only before passing through the directional filter but also during or after passing through the directional filter. In addition, the straightness of sputtered particles can be surely improved, the amount of components flying linearly from the target to the film formation target substrate is increased, and the components attached to the directional filter can be reduced. According to item 2, since the sputtering electrode is composed of the cylindrical magnetron sputtering electrode, it is possible to reliably discharge even the low pressure sputtering gas. There is also. According to the third to fifth aspects, there is an effect that the uniformity of the film thickness of the film formed on the film formation target substrate can be improved. Further, according to claim 6, since the sputtering film forming apparatus and the CVD apparatus can be easily combined, efficient film formation can be realized, and generation of natural oxides can be suppressed as much as possible.
There is an effect that a film of good quality and high reliability can be obtained. According to claims 7 and 8, there is also an effect that the method of claim 6 can be carried out accurately.

[Brief description of drawings]

FIG. 1 is an explanatory plan view showing a first embodiment of a sputtering film forming apparatus according to the present invention.

FIG. 2 is a front view for explaining the sputter film forming apparatus.

FIG. 3 is an explanatory diagram showing the relationship between the number of processed wafers and the foreign matter detection degree according to the magnitude of the sputtering gas pressure.

FIG. 4 is an explanatory diagram showing the throwing power of through holes depending on the magnitude of the sputtering gas pressure and the presence or absence of a directional filter.

FIG. 5 is an explanatory plan view showing a second embodiment of the sputtering film forming apparatus according to the present invention.

FIG. 6 is an explanatory front view showing a third embodiment of the sputtering film forming apparatus according to the present invention.

FIG. 7 is an explanatory front view showing a fourth embodiment of the sputtering film forming apparatus according to the present invention.

FIG. 8 is an explanatory plan view showing another embodiment of the sputtering film forming apparatus according to the present invention.

FIG. 9 is a schematic view showing an example of a multi-layer film forming apparatus for carrying out the multi-layer film forming method according to the present invention.

FIG. 10 is a schematic view showing another embodiment of the multi-layer film forming apparatus.

FIG. 11 is a front view showing a configuration example of a conventional sputtering film forming apparatus.

FIG. 12 is an enlarged view for explaining a tungsten wiring film formed by a conventional sputtering film forming apparatus.

[Explanation of symbols]

11, 51 ... Sputtering electrode, 12 ... Directional filter, 1
3 ... Wafer as substrate for film formation, 101 ... Supply / discharge chamber, 1
02 ... Pretreatment chamber, 103 ... Sputtering chamber, 104 ... CVD
Chamber, 105 ... Transport chamber, 106 ... Transport robot, 110,
111 ... Detection means, 112 ... Rotating body of exchange mechanism.

Claims (8)

[Claims] 1. A sputter electrode, a target on which sputter particles are ejected by the sputter electrode, a substrate which is installed at a position facing the target and which deposits sputter particles at a desired position to form a film, and a target. And a substrate to be film-formed, which is provided between the target and the film-forming substrate, and which gives directivity to sputtered particles from the target, a sputtering chamber for accommodating the sputter electrode, the target, the substrate to be film-formed, and the directional filter, and the sputtering device. A gas introducing unit for keeping the inside of the chamber at a predetermined sputtering gas pressure, and the gas pressure inside the sputtering chamber is 1 × 10 ⁻⁵ to 10 ^−3.
A sputtering film forming apparatus characterized in that the sputtering electrode can be discharged within the range of the gas pressure while being set to Torr. 2. A sputter electrode, a target on which sputtered particles are ejected by the sputter electrode, a substrate which is placed at a position facing the target and which deposits sputtered particles at a desired position to form a film, and a target. And a substrate to be film-formed, which is provided between the target and the film-forming substrate, and which gives directivity to sputtered particles from the target, a sputtering chamber for accommodating the sputter electrode, the target, the substrate to be film-formed, and the directional filter, and the sputtering device. A gas introducing unit for keeping the inside of the chamber at a predetermined sputtering gas pressure, and the gas pressure inside the sputtering chamber is 1 × 10 ⁻⁵ to 10 ^−3.
A sputtering film forming apparatus characterized in that the sputtering electrode is composed of a cylindrical magnetron sputtering electrode capable of discharging within a range of gas pressure thereof while being set to Torr. 3. A sputter electrode, a target on which sputter particles fly by the sputter electrode, a substrate which is placed at a position facing the target and which deposits sputter particles at a desired position to form a film, and a target. And a substrate to be film-formed, which is provided between the target and the film-forming substrate, and which gives directivity to sputtered particles from the target, a sputtering chamber for accommodating the sputter electrode, the target, the substrate to be film-formed, and the directional filter, and the sputtering device. A gas introducing unit for keeping the inside of the chamber at a predetermined sputtering gas pressure, and the gas pressure inside the sputtering chamber is 1 × 10 ⁻⁵ to 10
^-3 Torr, and the sputtering electrode is composed of a cylindrical magnetron sputtering electrode capable of discharging within the range of the gas pressure thereof, and is formed into an oval shape having a flat surface facing the film formation target substrate, and the target is formed. A sputtering film forming apparatus, which is formed in a shape corresponding to the oblong shape of a sputtering electrode. 4. A sputter electrode, a target on which sputtered particles fly by the sputter electrode, a substrate which is placed at a position facing the target and which deposits sputtered particles at a desired position to form a film, and a target. And a substrate to be film-formed, which is provided between the target and the film-forming substrate, and which gives directivity to sputtered particles from the target, a sputtering chamber for accommodating the sputter electrode, the target, the substrate to be film-formed, and the directional filter, and the sputtering device. Gas introducing means for keeping the inside of the chamber at a predetermined sputtering gas pressure, means for moving at least the magnetic field generating means of the sputtering electrode along the axis of the sputtering electrode, means for moving the film formation target substrate along the axis of the sputtering electrode, A rotating means for rotating the film target substrate on a plane along the axis of the sputter electrode, and a directional filter are provided for the axis of the sputter electrode. And a means for moving the directional filter on a plane along the axis of the sputtering electrode, and a gas pressure in the sputtering chamber of 1 × 10 ^−5. A sputtering film forming apparatus characterized in that the sputtering electrode is a cylindrical magnetron sputtering electrode capable of discharging within a range of gas pressure thereof while having a pressure of -10 ^-3 Torr. 5. A sputter electrode, a target on which sputter particles are ejected by the sputter electrode, a substrate which is placed at a position facing the target and which deposits sputter particles at a desired position to form a film, and a target. And a substrate to be film-formed, which is provided between the target and the film-forming substrate, and which gives directivity to sputtered particles from the target, a sputtering chamber for accommodating the sputter electrode, the target, the substrate to be film-formed, and the directional filter, and the sputtering device. A gas introducing unit for keeping the inside of the chamber at a predetermined sputtering gas pressure, and the gas pressure inside the sputtering chamber is 1 × 10 ⁻⁵ to 10 ^−3.
Torr and the sputtering electrode is composed of a cylindrical magnetron sputtering electrode capable of discharging within the range of the gas pressure thereof, and is formed into an oval shape having a flat surface facing the film formation target substrate, and the target is the sputtering electrode. The sputtering film forming apparatus is formed in a shape corresponding to the oblong shape, and the axis of the magnetic field generating means of the sputtering electrode is arranged at a position away from the wafer in the sputtering electrode. 6. An underlayer film is formed by sputtering on a substrate to be film-formed in a vacuumed sputtering chamber in a sputtering gas pressure of 1 × 10 ⁻⁵ to 10 ⁻³ Torr, and then the substrate to be film-formed. Is transferred from the sputtering chamber to the CVD chamber while maintaining a vacuum state, and then a CVD film is formed on the base film of the substrate to be film-formed in the CVD chamber. 7. A sputtering chamber having a supply / discharge chamber for a film formation target substrate, a pretreatment chamber for cleaning the film formation target substrate, and a sputter film formation device for forming an underlayer film on the cleaned film formation target substrate. And a CVD chamber having a built-in CVD apparatus for forming a CVD film on a film formation target substrate on which a base film is formed,
A transfer chamber that communicates with the supply / discharge chamber, the pretreatment chamber, the sputtering chamber, and the CVD chamber, and that has a transfer unit that transfers the substrate for film formation to the chambers, and a vacuum unit that evacuates these chambers (see FIG. (Not shown), the sputter film forming apparatus,
A sputter electrode, a target on which sputter particles are ejected by the sputter electrode, a film formation target substrate which is installed at a position facing the target and deposits sputter particles at a desired position to form a film, a target and a film formation target It has a directional filter installed between the substrates to give a directivity to the sputtered particles from the target, and a gas introducing means for keeping the sputter chamber at a predetermined sputter gas pressure, and the gas pressure in the sputter chamber is set to 1 A multi-layer film forming apparatus, characterized in that the sputtering electrode is capable of discharging within the range of the gas pressure thereof, while having a pressure of × 10 ^-5 to 10 ^-3 Torr. 8. A detection means for detecting the maintenance time of the directional filter based on the amount of sputtered particles adhering to the directional filter, and a replacement mechanism for replacing the directional filter at the time when the detection means detects the maintenance time. The multi-layer film forming apparatus according to claim 7, further comprising: