JPH0790565A - Composite target for magnetron sputtering and its production - Google Patents

Composite target for magnetron sputtering and its production

Info

Publication number
JPH0790565A
JPH0790565A JP17747393A JP17747393A JPH0790565A JP H0790565 A JPH0790565 A JP H0790565A JP 17747393 A JP17747393 A JP 17747393A JP 17747393 A JP17747393 A JP 17747393A JP H0790565 A JPH0790565 A JP H0790565A
Authority
JP
Japan
Prior art keywords
target
sintered alloy
alloy layer
thin film
magnetron sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17747393A
Other languages
Japanese (ja)
Inventor
Atsushi Funakoshi
淳 船越
Takashi Nishi
隆 西
Isao Endo
功 遠藤
Masahiko Yasui
雅彦 安井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kubota Corp
Original Assignee
Kubota Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kubota Corp filed Critical Kubota Corp
Priority to JP17747393A priority Critical patent/JPH0790565A/en
Publication of JPH0790565A publication Critical patent/JPH0790565A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor

Abstract

PURPOSE:To minimize the consumption of the element of noble metal such as platinum and to reduce a film forming cost with respect to a target to be used in magnetron sputtering by forming a thin film (Pt-contg. Co alloy thin film of magnetic recording medium, etc.) contg. the expansive element. CONSTITUTION:This composite target consists of a sintered alloy layer 11 (CoCr alloy, CoCrNiTa alloy, etc.) having a specified chemical composition and a rod member 12 (Pt, etc.) embedded in the sintered alloy layer and having a specified chemical composition. The rod material 3 is positioned in a sputtering discharge concentrated region E' and dispersedly arranged in its peripheral direction in the sintered alloy layer 11 at regular intervals, and the sintered alloy layer 11 and the rod material 12 are joined and integrated by solid-phase welding.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マグネトロンスパッタ
用ターゲット、特に金属薄膜型磁気記録媒体の磁気記録
膜(磁性膜)等として、Pt等の高価な元素を含む合金
薄膜の成膜コストの低減に有効なターゲットおよびその
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention reduces the cost of depositing an alloy thin film containing an expensive element such as Pt as a target for magnetron sputtering, especially as a magnetic recording film (magnetic film) of a metal thin film type magnetic recording medium. And a manufacturing method thereof.

【0002】[0002]

【従来の技術】磁気ディスク、磁気ドラム、磁気シー
ト、磁気テープ等の磁気記録媒体は、高密度記録の要請
から、その磁気記録膜(磁性膜)を、CoCr,CoN
i,CoCrNi,CoCrTa等のCo系強磁性合金
で形成した金属薄膜型磁気記録媒体が、従来の塗布型磁
気記録媒体に代わって主流となっている。磁気記録分野
における高密度記録の要請は増大の一途にあり、近時は
この要請に対し、保磁力,角形性,ノイズ特性等の改善
のための磁性膜材料として、上記Co合金にPt等を添
加したCoCrPt,CoNiPt,CoCrTaPt
等の白金系合金が開発され、その実用化が試みられてい
る。上記磁性膜を始めとする各種の薄膜の成膜法とし
て、マグネトロンスパッタ法は、複雑な組成を有する合
金薄膜を再現性良く形成でき、またスパッタ過程の基板
の昇温を抑制し得ると共に、スパッタ速度を大きくする
こともでき量産性に優れた工業的な成膜法として実施さ
れている。
2. Description of the Related Art In a magnetic recording medium such as a magnetic disk, a magnetic drum, a magnetic sheet, a magnetic tape, etc., a magnetic recording film (magnetic film) is made of CoCr, CoN in order to meet the demand for high density recording.
Metal thin film magnetic recording media formed of Co-based ferromagnetic alloys such as i, CoCrNi, and CoCrTa have become the mainstream in place of the conventional coating type magnetic recording media. The demand for high-density recording in the magnetic recording field is increasing, and in recent years, in response to this demand, Pt and the like have been added to the above Co alloy as a magnetic film material for improving coercive force, squareness, noise characteristics and the like. Added CoCrPt, CoNiPt, CoCrTaPt
Have been developed, and their practical application has been attempted. As a method for forming various thin films such as the above magnetic film, magnetron sputtering is capable of forming alloy thin films having a complicated composition with good reproducibility, suppressing the temperature rise of the substrate during the sputtering process, and performing sputtering. It is carried out as an industrial film forming method that can increase the speed and is excellent in mass productivity.

【0003】マグネトロンスパッタに使用されるターゲ
ットは、同軸型とプレナー型に大別され、そのいずれ
も、ターゲットの背面に配置されたマグネットの磁界
と、ターゲットに印可される電圧とによりターゲット表
面の近傍に直交電磁界が形成され、プラズマ中のArイ
オンは、その電磁界直交領域に捕捉され、そこにスパッ
タ放電が集中して生起する。直交電磁界によるスパッタ
放電の集中領域は、図5に示すようにターゲット10’
の表面に沿ってその板面の中心を囲む環形状の軌跡を描
き、ターゲットはその領域E’を溝状にえぐり取られ
て、図6に示すようにエロージョンEが生じる。エロー
ジョンEの凹陥深さは、スパッタ時間の経過と共に増大
する(同図(1)〜(3))。スパッタの進行に伴うエ
ロージョンEの増大のよりターゲット10’の表面が不
均一な形状になると、スパッタ効率の低下や、基板上に
形成される薄膜の均質性の低下等をきたす原因となるの
で、エロージョンEがある程度まで進むと、そのターゲ
ットの残材は廃棄され、新たなターゲットと取り替えら
れる。
Targets used in magnetron sputtering are roughly classified into coaxial type and planar type. In both cases, the magnetic field of a magnet arranged on the back surface of the target and the voltage applied to the target cause the vicinity of the target surface. An orthogonal electromagnetic field is formed in the area, Ar ions in the plasma are trapped in the area orthogonal to the electromagnetic field, and sputter discharge is concentrated and generated there. The concentrated area of the sputter discharge due to the orthogonal electromagnetic field is the target 10 'as shown in FIG.
A ring-shaped locus surrounding the center of the plate surface is drawn along the surface of the target, and the target is excavated in a groove shape in the area E ′, and erosion E occurs as shown in FIG. The recess depth of the erosion E increases as the sputtering time elapses ((1) to (3) in the same figure). If the surface of the target 10 ′ has a non-uniform shape due to an increase in erosion E accompanying the progress of sputtering, it may cause a decrease in sputtering efficiency and a decrease in the homogeneity of the thin film formed on the substrate. When the erosion E progresses to a certain extent, the residual material of the target is discarded and replaced with a new target.

【0004】[0004]

【発明が解決しようとする課題】マグネトロンスパッタ
のターゲットは、上記のように電磁界直交領域にスパッ
タ放電が集中してエロージョンEが進行するため、薄膜
の形成に有効利用されるのは、その極く一部分に限ら
れ、大部分は使用されないまま、残材として廃棄せざる
を得ず、従ってその有効利用率は著しく低い。同軸型の
ターゲットでは、ターゲット内のマグネットを駆動さ
せ、電磁界の直交領域をシフトさせることによりエロー
ジョン範囲を広げて残材量を少なくすることも行われて
いるが、プレナー型のターゲットではそのような対策は
採用し得ない。前述のように金属薄膜型磁気記録媒体の
分野では、磁性膜材料としてPt等を含むCo合金ター
ゲットの実用化も試みられており、その白金系合金ター
ゲットは極めて高価である。しかるに、ターゲットの有
効利用率が上記のように著しく低いことは、成膜コスト
を高め、その磁気記録媒体の実用化を阻害する大きな要
因となる。本発明は、上記に鑑み、高価な元素の使用量
を必要最小限に抑えながら、所望の化学組成を有する薄
膜を経済的に成膜することができるマグネトロンスパッ
タ用ターゲットおよびその製法方法を提供するものであ
る。
In the magnetron sputtering target, sputter discharge is concentrated in the region orthogonal to the electromagnetic field and the erosion E progresses as described above, so that it is effectively used for forming a thin film. It is limited to a small part, and most of it is unused and must be discarded as a residual material, so its effective utilization rate is extremely low. In the coaxial type target, the magnet in the target is driven to shift the orthogonal region of the electromagnetic field to expand the erosion range and reduce the amount of residual material. No measures can be adopted. As described above, in the field of metal thin film magnetic recording media, attempts have been made to put a Co alloy target containing Pt or the like as a magnetic film material into practical use, and the platinum alloy target is extremely expensive. However, the extremely low effective utilization rate of the target as described above increases the film formation cost and is a major factor that hinders the practical use of the magnetic recording medium. In view of the above, the present invention provides a target for magnetron sputtering capable of economically forming a thin film having a desired chemical composition while minimizing the amount of expensive elements used, and a method for producing the same. It is a thing.

【0005】[0005]

【課題を解決するための手段】本発明のマグネトロンス
パッタ用ターゲットは、所定の化学組成を有する焼結合
金層と、その焼結合金層内に埋め込まれた白金族元素を
含有する棒材とからなり、棒材は、スパッタ放電集中領
域内に位置してその周方向に一定の間隔を置いて焼結合
金層中に分散配置され、棒材と焼結合金層とは固相接合
により結合一体化していることを特徴としている。本発
明のマグネトロンスパッタ用ターゲットは、金属カプセ
ル内に、白金等の貴金属元素を含有する複数本の棒材を
所定位置に固定すると共に、所定の化学組成を有する金
属粉末を充填し、脱気密封したうえ、熱間静水等方加圧
焼結処理することにより製造される。
A magnetron sputtering target of the present invention comprises a sintered alloy layer having a predetermined chemical composition and a rod material containing a platinum group element embedded in the sintered alloy layer. The rods are located in the sputter discharge concentration region and dispersed in the sintered alloy layer at regular intervals in the circumferential direction, and the rods and the sintered alloy layer are bonded and integrated by solid-phase bonding. It is characterized by becoming. The target for magnetron sputtering of the present invention is to fix a plurality of rods containing a noble metal element such as platinum in a predetermined position in a metal capsule, fill a metal powder having a predetermined chemical composition, and degas and hermetically seal. In addition, it is manufactured by hot isostatic pressing under hydrostatic pressure.

【0006】[0006]

【作用】本発明のターゲットのマグネトロンスパッタで
は、焼結合金層と棒材のスパッタ蒸発により薄膜の形成
が行われる。形成される薄膜の化学組成は、ターゲット
の焼結合金層と棒材のそれぞれの化学組成、およびその
スパッタ放電領域内に占める両者の面積比率より任意か
つ正確に制御される。磁気記録媒体の基板にPt含有C
o合金薄膜を形成するスパッタ成膜では、ターゲットの
全体を高価なPt含有合金とする必要がなく、棒材をP
t含有組成とすることにより必要最少量のPtの使用に
より、所望の組成を有するPt含有Co合金薄膜が形成
される。
In the magnetron sputtering of the target of the present invention, a thin film is formed by sputter evaporation of the sintered alloy layer and the bar material. The chemical composition of the thin film to be formed is controlled arbitrarily and accurately by the chemical composition of each of the sintered alloy layer of the target and the bar, and the area ratio of the two in the sputter discharge region. Pt-containing C on the substrate of the magnetic recording medium
In sputter film formation for forming an o alloy thin film, it is not necessary to use an expensive Pt-containing alloy for the entire target,
With the t-containing composition, a Pt-containing Co alloy thin film having a desired composition is formed by using the minimum necessary amount of Pt.

【0007】以下、本発明について詳しく説明する。図
1は、本発明のターゲットの例を示している〔同図(1)
は外観斜視図、同図(2) はそのI-I 断面図) 。11は焼
結合金層、12は棒材である。棒材12はスパッタ放電
が集中する環状領域E’内に位置しその周方向に一定の
間隔を置いて焼結合金層11に埋め込まれている。棒材
12は、鋳造品,もしくは圧延,鍛造等による塑性加工
品、または焼結品等である。
The present invention will be described in detail below. FIG. 1 shows an example of the target of the present invention [FIG.
Is an external perspective view and (2) is its II cross-section). Reference numeral 11 is a sintered alloy layer, and 12 is a bar. The rods 12 are located in an annular region E ′ where sputter discharge is concentrated and embedded in the sintered alloy layer 11 at regular intervals in the circumferential direction. The bar 12 is a cast product, a plastically processed product by rolling, forging, or the like, or a sintered product.

【0008】焼結合金層11と棒材12との化学組成
は、スパッタ成膜しようとす薄膜の化学組成に応じてに
適宜設定される。磁気記録媒体の磁性膜を、Pt含有C
o合金で形成するターゲットとして、例えば棒材12を
Ptとし、焼結合金11を、それ以外の元素からなる合
金(CoCr,CoNi,CoTa,CoCrTa,C
oCrNiTa等)とする組合せのターゲットとすこと
ができる。また棒材を、Ptと他の元素との合金(例え
ば、PtCo合金,PtNi合金,PtCrTa合金
等)としてもよく、棒材と焼結合金の構成元素の配分と
その組成の設計は任意である。
The chemical composition of the sintered alloy layer 11 and the bar 12 is appropriately set according to the chemical composition of the thin film to be sputter-deposited. The magnetic film of the magnetic recording medium is made of Pt-containing C
As a target formed of an o alloy, for example, the rod 12 is Pt, and the sintered alloy 11 is an alloy of other elements (CoCr, CoNi, CoTa, CoCrTa, C).
oCrNiTa or the like). The rod may be an alloy of Pt and other elements (for example, PtCo alloy, PtNi alloy, PtCrTa alloy, etc.), and the distribution of the constituent elements of the rod and the sintered alloy and the design of the composition thereof are arbitrary. .

【0009】上記棒材12と焼結合金層11とからなる
ターゲット10を使用するマグネトロンスパッタによ
り、例えば、原子%で、Cr6〜17%,Pt1〜15
%,残部CoからなるCoCrPt合金薄膜、Niもし
くはTaの1種ないし2種1〜38%(2種複合の場合
は合計量),Pt1〜15%,残部CoからなるCoN
i(Ta)Pt合金薄膜、Cr6〜17%,Niもしく
はTaの1種ないし2種1〜38%(NiとTaの複合
の場合は合計量),Pt1〜15%,残部Coからなる
CoCrNi(Ta)Pt合金薄膜、等を成膜すること
ができる。形成される薄膜の組成は、むろん上記例示の
それに限定されず、焼結合金層11と棒材12の化学組
成、および焼結合金層11に埋め込まれる棒材12の断
面径と埋め込み本数(スパッタ放電領域E’内の焼結合
金層11と棒材12との容積比率)により任意かつ正確
に制御することができる。
By magnetron sputtering using the target 10 composed of the rod 12 and the sintered alloy layer 11, for example, Cr is 6 to 17% and Pt is 1 to 15 in atomic%.
%, CoCrPt alloy thin film consisting of the balance Co, 1 or 2 to 1 to 38% of Ni or Ta (total amount in the case of two kinds composite), Pt 1 to 15%, CoN consisting of the balance Co
i (Ta) Pt alloy thin film, Cr 6 to 17%, Ni or Ta 1 type to 2 type 1 to 38% (total amount in the case of Ni and Ta composite), Pt 1 to 15%, balance CoCrNi (composed of Co) Ta) Pt alloy thin film, etc. can be formed. Of course, the composition of the thin film formed is not limited to that illustrated above, and the chemical composition of the sintered alloy layer 11 and the rod 12 and the cross-sectional diameter and the number of embedded rods 12 embedded in the sintered alloy layer 11 (sputtering). The volume ratio of the sintered alloy layer 11 and the rod 12 in the discharge region E ′ can be controlled arbitrarily and accurately.

【0010】なお、焼結合金層11と棒材12のそれぞ
れに対する元素の配分とその化学組成は、白金等の貴金
属元素等の高価な元素を棒材12の構成元素とする例に
限定されない。例えば、薄膜を構成する全元素を一の合
金として含有するターゲット10を製作することが、製
造工程上の不利、例えば工程の煩瑣や、ターゲット品質
の確保の困難(構成元素の汚染、歩留りの低下等)を伴
うような場合には、その構成元素を焼結合金層11と棒
材12とに二分し、両者部材の組合せとすることによ
り、製作工程上の不利を回避しながら所定の組成を有す
るターゲットを構成することができる。
The distribution of elements to the sintered alloy layer 11 and the bar 12 and the chemical composition thereof are not limited to the example in which an expensive element such as a noble metal element such as platinum is used as a constituent element of the bar 12. For example, it is disadvantageous in the manufacturing process to manufacture the target 10 containing all the elements constituting the thin film as one alloy, for example, the process is complicated, and it is difficult to secure the target quality (contamination of constituent elements, deterioration of yield). Etc.), the constituent elements are divided into the sintered alloy layer 11 and the bar 12, and the two members are combined to obtain a predetermined composition while avoiding a disadvantage in the manufacturing process. A target having can be configured.

【0011】本発明のターゲット10は、熱間静水等方
圧焼結法(HIP焼結法)により好適に製造される。H
IP焼結法によれば、焼結合金層11を高緻密質化する
と共に、焼結合金層11と棒材12との界面を固相接合
による確実な結合状態とし、また棒材12をターゲット
のスパッタ放電集中領域内の所定位置に正確に配置固定
された構成とすることができる。
The target 10 of the present invention is preferably manufactured by a hot isostatic pressing method (HIP sintering method). H
According to the IP sintering method, the sintered alloy layer 11 is highly densified, and the interface between the sintered alloy layer 11 and the rod 12 is brought into a surely bonded state by solid-phase bonding, and the rod 12 is targeted. It can be configured to be accurately arranged and fixed at a predetermined position in the sputter discharge concentration region.

【0012】図2は、HIP焼結法による本発明のター
ゲットの製造例を示している。Cはカプセル(軟鋼,ス
テンレス鋼等の容器)、11’は焼結合金粉末であり、
カプセルC内に棒材(Pt棒等)を所定の位置に分散配
置して固定(溶接等)すると共に、棒材12の周りに焼
結原料粉末11’が充填される。棒材12は、所定の化
学組成を有する鋳造材、もしくは圧延,鍛造等の塑性加
工材,あるいは焼結材等を機械加工により所定サイズに
仕上げた部材である。焼結原料粉末は、複数種の金属粉
末を、所定の成分組成となる割合に配合し混練した混合
粉末であってもよいが、混合される粉末の比重差による
不均一性を回避するために、所定の構成元素を含有する
合金の粉末であるのが好ましい。また、その粉末とし
て、合金溶湯をアトマイズ処理に付して得られる急冷凝
固された微細粉末(例えば粒径22メッシュ以下)は、
固溶限の低いB,Taなどの偏析も軽微であり、均質性
のよい粉末として好適に使用される。
FIG. 2 shows an example of manufacturing the target of the present invention by the HIP sintering method. C is a capsule (a container of mild steel, stainless steel, etc.), 11 'is a sintered alloy powder,
Rods (Pt rods or the like) are dispersed and fixed at predetermined positions in the capsule C and fixed (welding or the like), and the sintering raw material powder 11 ′ is filled around the rods 12. The rod 12 is a member obtained by machining a cast material having a predetermined chemical composition, a plastically worked material such as rolling or forging, or a sintered material to a predetermined size by machining. The sintering raw material powder may be a mixed powder in which a plurality of kinds of metal powders are mixed and kneaded in a ratio of a predetermined component composition, but in order to avoid non-uniformity due to a difference in specific gravity of the mixed powders. It is preferable that the powder is an alloy powder containing predetermined constituent elements. Further, as the powder, a rapidly solidified fine powder (for example, a particle size of 22 mesh or less) obtained by subjecting a molten alloy to an atomizing treatment is
Segregation of B, Ta, etc., which has a low solid solubility limit, is also slight, and it is suitably used as a powder with good homogeneity.

【0013】カプセルCに棒材12と焼結原料粉末1
1’を充填したうえ、脱気管Dを介してカプセルC内を
真空密封する。この場合、真空脱気が不十分であると、
得られたターゲットのスパッタ工程で、ターゲット内に
残留した窒素,酸素等のガスが異常放電の原因となるの
で、その真空密封は約0.1mmHg以下とするのが好まし
い。真空密封後の熱間静水圧焼結処理は、温度:800
〜1250℃、加圧力:500〜2000Kgf/cm
2 、保持時間:0.5〜4Hrの条件下に首尾よく達成
され、相対密度約98%以上の高緻密性を確保できると
共に、形成される焼結合金層11と棒状体12との界面
の接合を強化が確保される。上記工程を経てえられる焼
結品に機械加工を加えてカプセルCを除去すると共に、
所定の形状サイズに仕上げてターゲット10を得る。
A capsule 12 has a rod 12 and a sintering raw material powder 1
After filling 1 ', the inside of the capsule C is vacuum-sealed via the deaeration pipe D. In this case, if vacuum degassing is insufficient,
In the sputtering process of the obtained target, gas such as nitrogen and oxygen remaining in the target causes abnormal discharge, so that the vacuum sealing is preferably about 0.1 mmHg or less. The hot isostatic pressing process after vacuum sealing has a temperature of 800.
~ 1250 ° C, pressure: 500-2000Kgf / cm
2. Holding time: Achieved successfully under the condition of 0.5 to 4 Hr, high density with relative density of about 98% or more can be ensured, and the interface between the sintered alloy layer 11 and the rod-shaped body 12 to be formed. Enhancing the joint is ensured. The capsule C is removed by machining the sintered product obtained through the above process by machining.
The target 10 is obtained by finishing to a predetermined shape size.

【0014】[0014]

【実施例】【Example】

〔1〕ターゲットの製造:図2に示すようにカプセルC
(軟鋼製)に棒材12を溶接により所定位置に固定し、
焼結原料粉末11’を充填したうえ、脱気密封し、熱間
静水圧焼結処理(HIP処理)に付し、焼結後機械加工
を加えてターゲットを調製する。 (1) 原料粉末:Co合金アトマイズ粉末(粒径22メッ
シュアンダ) 成分組成(Wt%) Cr 8,Ni 4,Ta 10,C
o Bal。 (2) 棒材:Pt棒(純度99.99%)、直径10m
m。 (3) 真空密封:0.08mmHg。 (4) 焼結条件:温度1000℃,圧力1000kgf/
cm2 、保持時間2Hr。
[1] Production of Target: Capsule C as shown in FIG.
Weld the bar 12 to (made of mild steel) by welding,
After the sintering raw material powder 11 'is filled, it is degassed and hermetically sealed, subjected to hot isostatic pressing (HIP processing), and subjected to machining after sintering to prepare a target. (1) Raw material powder: Co alloy atomized powder (particle size 22 mesh under) Component composition (Wt%) Cr 8, Ni 4, Ta 10, C
o Bal. (2) Bar material: Pt bar (purity 99.99%), diameter 10 m
m. (3) Vacuum sealed: 0.08 mmHg. (4) Sintering conditions: temperature 1000 ° C, pressure 1000 kgf /
cm 2 , holding time 2 Hr.

【0015】(5) 供試ターゲット形状・サイズ:HIP
処理後、機械加工によりカプセルを除去して焼結合金層
12と棒材とからなる複合焼結体(板状体、板厚40m
m)を取り出し、機械加工を加えて、図1に示す角板型
のターゲット複数枚を得る。 サイズ(mm):130×500×10。 棒材の分布:スパッタ放電集中領域である略矩形環状領
域の中心線に沿って、20mmの等間隔を置いて分布。
スパッタ放電集中領域内における棒材の占める面積比率
(棒材/焼結合金)は7%である。
(5) Test target shape / size: HIP
After the treatment, the capsules are removed by machining to remove the capsules and form a composite sintered body composed of the sintered alloy layer 12 and a rod (plate-shaped body, plate thickness 40 m
m) is taken out and subjected to machining to obtain a plurality of rectangular plate type targets shown in FIG. Size (mm): 130 × 500 × 10. Distribution of rods: distributed along the center line of the substantially rectangular annular region, which is the sputter discharge concentration region, at equal intervals of 20 mm.
The area ratio of the bar material in the sputter discharge concentrated region (bar material / sintered alloy) is 7%.

【0016】〔2〕磁気記録媒体の磁性膜のスパッタ成
膜試験 上記ターゲットを磁気記録媒体(面内異方性磁気ディス
ク)の磁性膜形成用ターゲットとし、マグネトロンスパ
ッタにより、アルミニウム合金板(非磁性膜として膜厚
20μmのNi-P無電解めっき膜と磁性層の下地膜として膜
厚1000ÅのCr膜が積層成膜されている) に、CoCr
NiTaPt合金薄膜(膜厚600Å)を成膜した。 スパッタ条件:雰囲気1×10-2TorrArガス、基板温
度250℃、基板バイアス電圧−150V。
[2] Sputter deposition test of magnetic film of magnetic recording medium Using the above target as a target for forming a magnetic film of a magnetic recording medium (in-plane anisotropic magnetic disk), an aluminum alloy plate (nonmagnetic) was formed by magnetron sputtering. Film thickness as a film
20 μm Ni-P electroless plating film and a Cr film with a film thickness of 1000 Å are laminated to form a base film for the magnetic layer).
A NiTaPt alloy thin film (film thickness 600Å) was formed. Sputtering conditions: atmosphere 1 × 10 −2 Torr Ar gas, substrate temperature 250 ° C., substrate bias voltage −150V.

【0017】図3は、上記ターゲットのスパッタ放電集
中領域におけるエロージョンEの発生状況を示してい
る。スパタリングの進行と共に、棒材12を中心として
エロージョンEは深くなり、棒材12は効果的にスパッ
タ成膜に使用されている。図4は、上記スパッタリング
により基板上に形成される磁性膜(CoCrNiTaP
t合金)の組成について、そのPt含有量の経時変動を
示している。図より、ターゲットの使用開始当初から、
その寿命に到るまで、形成される磁性膜の組成の変動は
殆どなく、Pt含有Co合金からなるターゲットを使用
する場合と同様に所定の合金組成を有する磁性膜が安定
に形成されていることが分かる。
FIG. 3 shows the occurrence of erosion E in the sputter discharge concentrated region of the target. As the sputtering progresses, the erosion E becomes deeper with the bar 12 as the center, and the bar 12 is effectively used for sputtering film formation. FIG. 4 shows a magnetic film (CoCrNiTaP) formed on the substrate by the above sputtering.
With respect to the composition of (t alloy), the temporal change of the Pt content is shown. From the figure, from the beginning of using the target,
Until the end of its life, the composition of the magnetic film to be formed hardly changes, and the magnetic film having a predetermined alloy composition is stably formed as in the case of using a target made of a Pt-containing Co alloy. I understand.

【0018】[0018]

【発明の効果】本発明のターゲットは、焼結合金層と棒
材との複合構造を有するので、白金族元素等の高価な元
素を含有する薄膜のスパッタ成膜、例えば、磁気記録媒
体の磁性膜として、Pt等を含有するCo合金薄膜を成
膜する場合において、そのターゲットを、Pt等の棒材
と焼結合金層との複合構造とすることにより、高価な元
素の使用量を必要最小限に抑えながら、所定の化学組成
を有する磁性薄膜を経済的に形成することができ、磁気
記録媒体の実用価値を高めるものである。また本発明
は、高価な元素を含有する薄膜をスパッタ成膜するため
のターゲットに留まらず、例えば、薄膜の形成に必要な
元素の全てを含有する一の合金としてターゲットを製作
することが、製造工程の煩瑣、あるいはターゲット品質
の確保(合金成分の汚染、歩留りの低下等の防止)の困
難を伴うような場合において、その構成元素を焼結合金
層と棒材とに二分し、両者を複合した構成とすることに
より、ターゲット製造工程の簡素化、コスト低減、ター
ゲット品質の改善等の効果が得られ、更にターゲットの
品質の改善効果は、スパッタ成膜される薄膜の品質の向
上を可能とする。
Since the target of the present invention has a composite structure of a sintered alloy layer and a bar, it can be formed into a thin film containing an expensive element such as a platinum group element by sputtering, for example, the magnetic property of a magnetic recording medium. When a Co alloy thin film containing Pt or the like is formed as a film, the target has a composite structure of a rod material such as Pt and a sintered alloy layer, so that the amount of expensive elements used can be minimized. It is possible to economically form a magnetic thin film having a predetermined chemical composition while suppressing the amount to the limit, and to enhance the practical value of the magnetic recording medium. Further, the present invention is not limited to a target for forming a thin film containing an expensive element by sputtering, and for example, a target may be manufactured as an alloy containing all of the elements necessary for forming a thin film. When the process is complicated or it is difficult to secure the target quality (contamination of alloy components, prevention of yield reduction, etc.), the constituent elements are divided into a sintered alloy layer and a bar, and both are combined. With this configuration, the target manufacturing process can be simplified, the cost can be reduced, the target quality can be improved, and the target quality can be improved by improving the quality of the sputtered thin film. To do.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のターゲットの実施例を示す図(同図
(1):外観斜視図、同図(2)I-I 断面図)である。
FIG. 1 is a view showing an embodiment of a target of the present invention (FIG. 1 (1): external perspective view, FIG. 2 (2) II sectional view).

【図2】熱間静水圧焼結法による本発明のターゲットの
製造法の断面説明図である。
FIG. 2 is a cross-sectional explanatory view of a method for manufacturing a target of the present invention by a hot isostatic pressing method.

【図3】マグネトロンスパッタにおける本発明のターゲ
ットのエロージョンの発生状況を示す断面図である。
FIG. 3 is a cross-sectional view showing the generation state of erosion of the target of the present invention in magnetron sputtering.

【図4】本発明のターゲットを使用して形成される薄膜
の組成変動の例を示すグラフである。
FIG. 4 is a graph showing an example of composition variation of a thin film formed using the target of the present invention.

【図5】マグネトロンスパッタにおけるターゲット表面
のスパッタ放電集中領域を示す斜視説明図である。
FIG. 5 is a perspective explanatory view showing a sputter discharge concentrated region on a target surface in magnetron sputtering.

【図6】マグネトロンスパッタにおける従来のターゲッ
トのエロージョンを示す断面説明図である。
FIG. 6 is a cross-sectional explanatory view showing erosion of a conventional target in magnetron sputtering.

【符号の説明】[Explanation of symbols]

10,10’:ターゲット、11:焼結合金層、12:
棒材、E’:スパッタ放電集中領域、E:エロージョ
ン。C:カプセル、11’:焼結原料粉末。
10, 10 ': Target, 11: Sintered alloy layer, 12:
Bar material, E ': Sputter discharge concentrated area, E: Erosion. C: Capsule, 11 ': Sintering raw material powder.

【手続補正書】[Procedure amendment]

【提出日】平成5年12月21日[Submission date] December 21, 1993

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0004[Correction target item name] 0004

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0004】[0004]

【発明が解決しようとする課題】マグネトロンスパッタ
のターゲットは、上記のように電磁界直交領域にスパッ
タ放電が集中してエロージョンEが進行するため、薄膜
の形成に有効利用されるのは、その極く一部分に限ら
れ、大部分は使用されないまま、残材として廃棄せざる
を得ず、従ってその有効利用率は著しく低い。前述のよ
うに金属薄膜型磁気記録媒体の分野では、磁性膜材料と
してPt等を含むCo合金ターゲットの実用化も試みら
れており、その白金系合金ターゲットは極めて高価であ
る。しかるに、ターゲットの有効利用率が上記のように
著しく低いことは、成膜コストを高め、その磁気記録媒
体の実用化を阻害する大きな要因となる。本発明は、上
記に鑑み、高価な元素の使用量を必要最小限に抑えなが
ら、所望の化学組成を有する薄膜を経済的に成膜するこ
とができるマグネトロンスパッタ用ターゲットおよびそ
の製法方法を提供するものである。
In the magnetron sputtering target, sputter discharge is concentrated in the region orthogonal to the electromagnetic field and the erosion E progresses as described above, so that it is effectively used for forming a thin film. limited Ku portion, remains largely unused, it is inevitable to waste as surplus material, thus its effective utilization have markedly low. In the field of metal thin film type magnetic recording medium as before mentioned, practical application of the Co alloy target containing Pt such as a magnetic film material also been attempted, the platinum-based alloy target are very expensive. However, the extremely low effective utilization rate of the target as described above increases the film formation cost and is a major factor that hinders the practical use of the magnetic recording medium. In view of the above, the present invention provides a target for magnetron sputtering capable of economically forming a thin film having a desired chemical composition while minimizing the amount of expensive elements used, and a method for producing the same. It is a thing.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C23C 14/35 Z 8414−4K G11B 5/85 C 7303−5D H01F 41/18 (72)発明者 安井 雅彦 大阪市浪速区敷津東一丁目2番47号 株式 会社クボタ内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location C23C 14/35 Z 8414-4K G11B 5/85 C 7303-5D H01F 41/18 (72) Inventor Masahiko Yasui 1-247 Shikitsuhigashi Naniwa-ku Osaka City Kubota Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 磁気記録媒体の磁気記録層をスパッタ成
膜するための、所定の化学組成を有する焼結合金層と、
その焼結合金層内に埋め込まれた白金等の貴金属元素を
含有する棒材とからなり、棒材は、スパッタ放電集中領
域内に位置してその周方向に一定の間隔を置いて焼結合
金層中に分散配置され、棒材と焼結合金層とは固相接合
により結合一体化していることを特徴とするマグネトロ
ンスパッタ用複合ターゲット。
1. A sintered alloy layer having a predetermined chemical composition for forming a magnetic recording layer of a magnetic recording medium by sputtering.
It consists of a rod material containing a precious metal element such as platinum embedded in the sintered alloy layer, and the rod material is located in the spatter discharge concentrated region and is a sintered alloy with a certain interval in the circumferential direction. A composite target for magnetron sputtering, wherein the bar and the sintered alloy layer are dispersed and arranged in a layer, and the rod and the sintered alloy layer are bonded and integrated by solid phase bonding.
【請求項2】 金属カプセル内に、白金等の貴金属元素
を含有する複数本の棒材を所定位置に固定すると共に、
所定の化学組成を有する金属粉末を充填し、脱気密封し
たうえ、熱間静水等方加圧焼結処理することを特徴とす
る請求項1に記載のマグネトロンスパッタ用複合ターゲ
ットの製造方法。
2. A plurality of rods containing a precious metal element such as platinum are fixed at predetermined positions in a metal capsule, and
The method for producing a composite target for magnetron sputtering according to claim 1, wherein a metal powder having a predetermined chemical composition is filled, degassed and hermetically sealed, and hot isostatic pressing is performed.
JP17747393A 1993-06-23 1993-06-23 Composite target for magnetron sputtering and its production Pending JPH0790565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17747393A JPH0790565A (en) 1993-06-23 1993-06-23 Composite target for magnetron sputtering and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17747393A JPH0790565A (en) 1993-06-23 1993-06-23 Composite target for magnetron sputtering and its production

Publications (1)

Publication Number Publication Date
JPH0790565A true JPH0790565A (en) 1995-04-04

Family

ID=16031537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17747393A Pending JPH0790565A (en) 1993-06-23 1993-06-23 Composite target for magnetron sputtering and its production

Country Status (1)

Country Link
JP (1) JPH0790565A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000070106A1 (en) * 1999-05-14 2000-11-23 Fuji Electric Co., Ltd. Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
CN106270555A (en) * 2015-05-25 2017-01-04 宁波江丰电子材料股份有限公司 The processing method of screw thread, the manufacture method of target material assembly and target material assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000070106A1 (en) * 1999-05-14 2000-11-23 Fuji Electric Co., Ltd. Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
US6607612B1 (en) 1999-05-14 2003-08-19 Migaku Takahashi Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
CN106270555A (en) * 2015-05-25 2017-01-04 宁波江丰电子材料股份有限公司 The processing method of screw thread, the manufacture method of target material assembly and target material assembly

Similar Documents

Publication Publication Date Title
JP2000282229A (en) CoPt SPUTTERING TARGET, ITS PRODUCTION, MAGNETIC RECORDING FILM AND CoPt MAGNETIC RECORDING MEDIUM
US5334267A (en) Sputtering target for magnetic recording medium and method of producing the same
US20010047936A1 (en) Target fabrication method for cylindrical cathodes
US4426265A (en) Method of producing a metallic thin film magnetic disk
KR20040044935A (en) Refurbishing spent sputtering targets
US6988306B2 (en) High purity ferromagnetic sputter target, assembly and method of manufacturing same
JP2005530925A (en) High PTF sputtering target and manufacturing method thereof
EP0603750B1 (en) Target for magneto-optical recording media and method for producing same
JP2533922B2 (en) Sintered target member and manufacturing method thereof
JP3494302B2 (en) Co-Cr-Pt magnetic recording medium target
JPH0790565A (en) Composite target for magnetron sputtering and its production
JPH0598433A (en) Manufacture of target for sputtering
JP2000038660A (en) CoPt SPUTTERING TARGET, ITS PRODUCTION AND CoPt-MAGNETIC RECORDING MEDIUM
JP2000212738A (en) Magnetron sputtering method and production of magnetic recording medium
US7041205B2 (en) Sputtering target and method for making composite soft magnetic films with a sintered target
US4476000A (en) Method of making a magnetic film target for sputtering
JP2000038661A (en) Co ALLOY TARGET, ITS PRODUCTION, APPARATUS FOR SPUTTERING, MAGNETIC RECORDING FILM AND DEVICE FOR MAGNETIC RECORDING
IE20000425A1 (en) Low permeability non-planar ferromagnetic sputter targets
JP2909108B2 (en) Target member and method of manufacturing the same
JP2955730B2 (en) Target material
JP2000328240A (en) Sputtering target for forming magneto-optical recording medium film and its production
JP2802852B2 (en) Target material and method for producing the same
JP2009132976A (en) Sputtering target for depositing perpendicular magnetic recording medium film having low relative magnetic permeability
JP2802851B2 (en) Target material and method for producing the same
JP2802850B2 (en) Target material and method for producing the same