JPH0790053A - Epoxy resin composition and semiconductor sealing device - Google Patents

Abstract

PURPOSE:To obtain an epoxy resin composition which is useful in the sealing of semiconductor because of its excellent humid resistance and soldering heat resistance by using a specific epoxy resin, a phenol-aralkyl resin, a polyimide resin and a specific amount of inorganic filler. CONSTITUTION:This resin composition comprises (A) an epoxy resin of formula I [R<1> is CjH2j+1 (j>=0); R<2> is CkH2k+1 (k>=0); R<3> is ClH2l+1 (l>=0); R<4> is CmH2m+1 (m>=0); n>=0], (B) a phenol-aralkyl resin of formula II (R<5> is R<1>; R<6> is R<2>), (C) a polyimide resin of formula III (R<7> is R<3>; R<8> is R<4>), and (D) an inorganic filler, where the content of the component D is 25 to 90wt.% based on the whole resin composition.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition having excellent moisture resistance and solder heat resistance, and a semiconductor encapsulation device in which a semiconductor chip is encapsulated with the composition.

[0002]

2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as technology development for high integration and high reliability, automation of the mounting process of semiconductor devices is being promoted. For example, when mounting a flat package type semiconductor device on a circuit board, conventionally, each lead pin has been soldered, but recently, a solder dipping method or a solder reflow method has been adopted.

A conventional semiconductor device sealed with a resin composition comprising an epoxy resin such as a novolac type epoxy resin, a novolac type phenol resin and silica powder has a drawback that the moisture resistance is lowered when the entire device is immersed in a solder bath. was there. Especially when a semiconductor device that has absorbed moisture is immersed, peeling between the encapsulating resin and the semiconductor chip, or the encapsulating resin and the lead frame, and internal resin cracking cause significant moisture resistance deterioration, which may cause wire breakage or moisture due to corrosion of the electrodes. A leak current is generated, and as a result, the semiconductor device has a drawback that it cannot guarantee long-term reliability.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and has little influence of moisture absorption, and particularly excellent moisture resistance and solder heat resistance after immersion in a solder bath, and a sealing resin. Epoxy resin composition and semiconductor capable of ensuring long-term reliability without peeling between the semiconductor chip or the encapsulating resin and the lead frame and the occurrence of internal resin cracks, and without the occurrence of wire breakage due to electrode corrosion or leak current due to moisture. It is intended to provide a sealing device.

[0005]

As a result of intensive studies aimed at achieving the above-mentioned object, the present inventors have used a specific phenol resin as a curing agent for a specific epoxy resin, and a specific polyimide resin. It was found that a resin composition excellent in moisture resistance and solder heat resistance can be obtained by modifying the resin composition by the method of (1) to complete the present invention.

That is, the present invention provides (A) an epoxy resin represented by the following general formula:

[0007]

[Chemical 7] (However, in the formula, R ¹ is a C _j H _{2j + 1} group, and R ² is C _k H _{2k + 1.}
R ³ represents a C ₁ H _{2l + 1} group, R ⁴ represents a C _m H _{2m + 1} group, and j, k, l, m and n in each group are 0.
Or represents an integer of 1 or more) (B) Phenol aralkyl resin represented by the following general formula

[0008]

[Chemical 8] (However, in the formula, R ⁵ is a C _j H _{2j + 1} group and R ⁶ is a C _k H _{2k + 1 group.}
Each represents a group, and j, k and n in each group represent 0 or an integer of 1 or more) (C) A polyimide resin represented by the following general formula and

[0009]

[Chemical 9] (However, in the formula, R ⁷ is a C ₁ H _{2l + 1} group, and R ⁸ is a C _m H _{2m + 1 group.}
Each represents a group, and l and m in each group represent 0 or an integer of 1 or more) (D) The inorganic filler is an essential component, and the resin composition contains 25 to 90 parts by weight of the (D) inorganic filler. % Of the epoxy resin composition. A semiconductor encapsulation device is obtained by encapsulating a semiconductor chip with a cured product of this epoxy resin composition.

The present invention will be described in detail below.

As the (A) epoxy resin used in the present invention, the one represented by the above formula is used, and the epoxy resin can be used without any particular limitation on its molecular weight and the like. As a specific compound, for example,

[0012]

[Chemical 10] (However, in the formula, n represents 0 or an integer of 1 or more)

[0013]

[Chemical 11] (However, in the formula, n represents 0 or an integer of 1 or more)

[0014]

[Chemical 12] (Wherein n represents 0 or an integer of 1 or more) and the like, and these can be used alone or in combination of two or more kinds. Further, a novolac type epoxy resin, an epibis type epoxy resin, and other generally known epoxy resins can be used in combination with these epoxy resins.

As the (B) phenol aralkyl resin used in the present invention, those represented by the above general formula can be used. As a specific compound, for example,

[0016]

[Chemical 13] (Wherein n represents 0 or an integer of 1 or more) and the like, and these can be used alone or in combination of two or more kinds. In addition to this phenol resin, a novolac type phenol resin obtained by reacting phenol such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and modified resins thereof, or other generally known phenol resin can be used. .

As the (C) polyimide resin used in the present invention, those represented by the above general formula can be used. Specific compounds include, for example:

[0018]

[Chemical 14] Etc. can be mentioned.

As the inorganic filler (D) used in the present invention, those generally used are widely used. Among them, silica powder having a low impurity concentration and an average particle diameter of 30 μm or less is preferably used. You can If the average particle size exceeds 30 μm, the moisture resistance and moldability are poor, which is not preferable. The blending ratio of the inorganic filler is based on the resin composition.
It is desirable that the content is 25 to 90% by weight. If the proportion is less than 25% by weight, the hygroscopicity of the resin composition is large,
Moisture resistance after immersion in solder is poor, and when it exceeds 90% by weight, fluidity is extremely deteriorated and moldability is poor, which is not preferable.

The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, specific phenol resin, specific polyimide resin and inorganic filler as essential components,
Release agents such as natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, paraffins and the like, antimony trioxide, as long as they do not violate the object of the present invention, and as necessary. Flame retardants such as, carbon black, colorants such as red iron oxide, silane coupling agents, various curing accelerators, rubber-based and silicone-based low stress imparting agents, and the like can be appropriately added and blended.

As a general method for preparing the epoxy resin composition of the present invention as a molding material, the above-mentioned specific epoxy resin, specific phenol resin, specific polyimide resin, inorganic filler and other components are used. After blending the selected raw material components in a predetermined composition ratio and mixing them sufficiently uniformly with a mixer or the like, further melt-mixing treatment with a heat roll or mixing treatment with a kneader etc., followed by cooling and solidification to an appropriate size. It can be crushed into a molding material. When the molding material thus obtained is applied to sealing, coating, insulation, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.

The semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor chip using the molding material described above. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large scale integrated circuit, a transistor, a thyristor, a diode and the like. The most general method of sealing is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The molding material is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with this cured product is obtained. Curing by heating is 150 ° C
It is desirable to heat and cure the above.

[0023]

The epoxy resin composition of the present invention increases the glass transition temperature of the resin composition by using the above-mentioned specific epoxy resin, specific phenol resin, and specific polyimide resin, and the thermo-mechanical properties The low-stress property is improved, the generation of resin cracks after solder immersion and solder reflow is eliminated, and the deterioration of moisture resistance is reduced.

[0024]

EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following examples and comparative examples, “%” means “% by weight”.

Example 1 8.9% epoxy resin shown in Chemical formula 15, 4.1% phenol aralkyl resin shown in Chemical formula 13, 5% polyimide resin shown in Chemical formula 14, silica powder 81%, curing accelerator 0.3%, ester wax 0.3 % And silane coupling agent 0.4
% At room temperature, further kneaded at 90 to 95 ° C., and cooled and ground to produce a molding material (A).

Example 2 5.5% of the epoxy resin of Chemical formula 10 used in Example 1 and 2.5% of the phenol aralkyl resin of Chemical formula 13 used in Example 1,
10% of the polyimide resin of Chemical formula 14 used in Example 1, 81% of silica powder, 0.3% of curing accelerator, 0.3% of ester wax
Further, 0.4% of a silane coupling agent was mixed at room temperature, further kneaded at 90 to 95 ° C., and cooled and pulverized to produce a molding material (B).

Comparative Example 1 Orthocresol Novolac type epoxy resin 17% was mixed with novolac type phenol resin 8%, silica powder 74%, curing accelerator 0.3%, ester wax 0.3% and silane coupling agent 0.4%. A molding material (C) was produced in the same manner as in Example 1.

Comparative Example 2 20% of epibis type epoxy resin (epoxy equivalent 450), 5% of novolac type phenol resin, 74% of silica powder, 0.3% of curing accelerator, 0.3% of ester wax and 0.4% of silane coupling agent were mixed. Further, the mixture was kneaded at 90 to 95 ° C. and cooled and pulverized to produce a molding material (D).

Using the molding materials A) to (D) manufactured in this manner, transfer injection was performed into a mold heated to 170 ° C. and cured to seal a semiconductor chip to manufacture a semiconductor sealing device. Various tests were conducted on these semiconductor encapsulation devices, and the results are shown in Table 1. The epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance and solder heat resistance. The remarkable effect of the invention could be confirmed.

[0030]

[Table 1] * 1: Diameter 50 mm, thickness 3 mm by transfer molding
The molded product of No. 1 was prepared, and it was left in saturated steam at 127 ° C. and 2.5 atm for 24 hours and measured by the increased weight. * 2: Make a molded product similar to the case of water absorption rate and
After post-curing for a certain time, a test piece of an appropriate size was prepared and measured using a thermomechanical analyzer. * 3: Tested according to JIS-K-6911. * 4: Using a molding material, a silicon chip with two aluminum wirings is bonded to a normal 42 alloy frame and transfer molded at 175 ° C for 2 minutes.
Post curing was carried out at 8 ° C for 8 hours. The molded product thus obtained was previously subjected to moisture absorption treatment at 40 ° C., 95% RH for 100 hours, and then subjected to 250
It was soaked in a solder bath at ℃ for 10 seconds. After that, a humidity resistance test was conducted in saturated steam at 127 ° C and 2.5 atm to evaluate the time for 50% disconnection (defect occurrence) due to aluminum corrosion. * 5: QFP (14 x 14 x 1.4 m) with 8 x 8 mm dummy chip
m) Package and use molding compound for 2 at 175 ° C
After transfer molding for 1 minute, post-curing was performed at 175 ° C. for 8 hours. The semiconductor encapsulation device manufactured in this way is
After absorbing moisture for 85% for 24 hours, put it in a solder bath at 240 ℃ 1
Soaked for a minute. Then, the package surface was observed with a stereoscopic microscope to evaluate the presence or absence of external resin cracks.

[0031]

As is clear from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention have excellent moisture resistance and solder heat resistance, are less affected by moisture absorption, and are less susceptible to electrode corrosion. It is possible to remarkably reduce the generation of leakage current due to disconnection and moisture, and it is possible to guarantee the reliability for a long period of time.

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Claims (2)

[Claims] 1. An epoxy resin represented by the following general formula (A): (However, in the formula, R ¹ is a C _j H _{2j + 1} group, and R ² is C _k H _{2k + 1.}
R ³ represents a C ₁ H _{2l + 1} group, R ⁴ represents a C _m H _{2m + 1} group, and j, k, l, m and n in each group are 0.
Or represents an integer of 1 or more) (B) Phenol aralkyl resin represented by the following general formula: (However, in the formula, R ⁵ is a C _j H _{2j + 1} group and R ⁶ is a C _k H _{2k + 1 group.}
Each represents a group, and j, k and n in each group represent 0 or an integer of 1 or more) (C) A polyimide resin represented by the following general formula and (However, in the formula, R ⁷ is a C ₁ H _{2l + 1} group, and R ⁸ is a C _m H _{2m + 1 group.}
Each represents a group, and l and m in each group represent 0 or an integer of 1 or more) (D) The inorganic filler is an essential component, and the resin composition contains 25 to 90 parts by weight of the (D) inorganic filler. % Of epoxy resin composition. 2. (A) An epoxy resin represented by the following general formula: embedded image (However, in the formula, R ¹ is a C _j H _{2j + 1} group, and R ² is C _k H _{2k + 1.}
R ³ represents a C ₁ H _{2l + 1} group, R ⁴ represents a C _m H _{2m + 1} group, and j, k, l, m and n in each group are 0.
Or represents an integer of 1 or more) (B) Phenol aralkyl resin represented by the following general formula: (However, in the formula, R ⁵ is a C _j H _{2j + 1} group and R ⁶ is a C _k H _{2k + 1 group.}
Each represents a group, and j, k and n in each group represent 0 or an integer of 1 or more) (C) A polyimide resin represented by the following general formula and (However, in the formula, R ⁷ is a C ₁ H _{2l + 1} group, and R ⁸ is a C _m H _{2m + 1 group.}
Each represents a group, and l and m in each group represent 0 or an integer of 1 or more) (D) The inorganic filler is an essential component, and the resin composition contains 25 to 90 parts by weight of the (D) inorganic filler. A semiconductor encapsulation device, which is obtained by encapsulating a semiconductor chip with a cured product of an epoxy resin composition contained in a ratio of%.