JPH0786385A - Substrate holding method and device therefor - Google Patents

Abstract

PURPOSE:To provide a substrate holding method and a device, wherein foreign objects are less attached to the rear of a substrate, and the substrate can be effectively cooled down and hardly damaged in treatment. CONSTITUTION:A slightly recessed part 8 is provided to a substrate cooling plane so as not to bring the rear of a substrate into direct contact with the cooling plane even if cooling gas 7 is introduced or not. A residual region of the cooling plane other than the recessed part 8 is made to come into contact with the rear of the substrate and reduced to an irreducible minimum in area. A protuberant part 3 whose surface is even is provided onto the cooling plane corresponding to the periphery of the substrate, and the substrate is fastened to the cooling plane by electrostatic attraction bringing its rear into contact with the cooling plane, whereby cooling gas is restrained from leaking out. An electric circuit of electrostatic attraction is connected to the ground of a vacuum chamber or the like from the substrate through the intermediary of plasma so as to protect the substrate against damage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to substrate holding, cooling, temperature measurement, and reduction of foreign matter on the back surface of a substrate for ensuring a substrate processing process that requires cooling the substrate. The present invention also relates to a substrate processing method and apparatus to which the invention is applied.

[0002]

2. Description of the Related Art In a substrate processing apparatus, a plasma processing apparatus includes a sputtering apparatus, a dry etching apparatus, a CVD (Chemical) apparatus for cooling the substrate.
There are many devices such as an al Vapor Deposition device, and a device for performing high energy ion implantation. In these devices, the processing atmosphere is often a vacuum, and the heat transfer is reduced, so that it is difficult to cool the substrate by bringing it into contact with the cooling surface as in the atmosphere. The problem of heat conduction in vacuum (diluted gas) has been discussed in various literatures, but even if normal contact surfaces contact each other, the true contact area is small. small. Particularly, in heat conduction between the substrate and the cooling surface, it is difficult to strongly press the substrate against the cooling surface in terms of damage to the substrate. For this reason, various measures have been taken, such as using a soft elastomer on the surface that contacts the substrate. However, since the heat load on the substrate has increased and it has become necessary to cool the substrate to a lower temperature, it has recently been possible to introduce a gas between the substrate and the cooling surface and cool the substrate using the gas as a medium. It is the mainstream.

There are various types of gas-cooled substrate holding devices. Broadly speaking, (1) a method in which the back surface of the substrate and the cooling surface are in contact with each other, and the cooling gas is introduced through a gap generated due to the surface roughness of the both to cool the gas, (2)
Introducing the cooling gas between the back surface of the substrate and the cooling surface is the same, but it can be classified into a method in which both are not in contact with each other.

As a conventional example corresponding to the former, for example, Japanese Examined Patent Publication No. 27778/1990, Japanese Unexamined Patent Publication No. 62-274625.
Japanese Patent Laid-Open No. 1-251375, Japanese Patent Laid-Open No. 3-1
There are Japanese Patent No. 54334 and Japanese Utility Model Laid-Open No. 4-8439.
Further, as an example of (2), for example, JP-A-63-102
319, JP-A-2-3122223, JP-A-3-174719, and the like. Before the cooling gas is introduced, the back surface of the substrate and the cooling surface are in contact with each other, but the gas pressure caused by the introduction of the cooling gas lifts the substrate,
The substrate and the cooling surface are not in contact with each other during cooling.
There is also an example like Japanese Patent No. 28.

When a certain cooling gas is used in these cooling operations, the cooling capacity (the amount of heat transfer) by the cooling gas depends on the cooling gas pressure and the distance between the back surface of the substrate and the cooling surface (gap on the back surface of the substrate). Depends on. When the pressure of the cooling gas is low, the amount of heat conduction is proportional to the pressure of the cooling gas and does not depend on the size of the gap on both sides (gap). The heat conduction characteristics in vacuum are shown schematically in FIG. When the cooling gas pressure is higher than the pressure P0 at which the mean free path of the cooling gas and the gap substantially match, the amount of heat exchange becomes almost constant and does not depend on the gas pressure. In the above example, the cooling gas pressure is often in a region where the heat conduction amount is proportional to the pressure in the example (1), and in a region where the heat conduction amount does not depend on the pressure in the example (2).

The features and problems of various substrate cooling methods will be described below. First, the case of cooling with the substrate and the cooling surface in contact with each other will be described. Those belonging to this example are disclosed in Japanese Examined Patent Publication No. 2-27778 and Japanese Patent Laid-Open No. 62-274.
No. 625, JP-A-1-251375, JP-A-3-154334, and JP-A-4-8439. In this type of cooling method, the substrate and the cooling surface are in contact with each other, but in detail, the most convex portion of the surface of the cooling surface is in contact with the substrate. The cooling surface and the concave portion of the substrate are not in contact with each other, and the gap is about 10 depending on the surface roughness of each.
It is about 50 to 50 μm. When the cooling gas is introduced into the gap, the pressure is often about several Torr, which is a region approximately equal to the mean free path.
Therefore, as shown in FIG. 1, by adequately setting the pressure, sufficient cooling efficiency can be obtained. However, as shown in the diagram of Japanese Patent Publication No. 27778/1990, when the cooling gas is supplied from a specific location, the cooling gas has the highest pressure in the supply part, and the pressure increases as it goes to the outer peripheral part of the substrate. Is reduced. Since the cooling efficiency has a pressure dependency as shown in FIG. 1, when the pressure distribution occurs in the substrate surface, there is a problem that the cooling efficiency becomes nonuniform and the temperature uniformity is impaired. If the cooling gas does not leak, that is, if there is no gas flow, the pressure distribution does not occur and the temperature distribution becomes uniform. However, in order to do so, it is necessary to seal the outer peripheral portion of the substrate. Examples thereof are Japanese Patent Laid-Open No. 62-274625 and Japanese Utility Model Laid-Open No. 2-135140. Further, JP-A-1-251735 and JP-A-4-61325 disclose that the supply of cooling gas is carried out from a plurality of locations to make the pressure distribution on the back surface of the substrate uniform. In any case, in these cooling methods, there is a problem in that the back surface of the substrate and the cooling surface are in contact with each other over a wide area, and the contact of the back surface of the substrate with the cooling surface causes a large number of foreign matters to adhere. Further, in order to prevent the leakage of the cooling gas by using the sealing material on the outer peripheral portion of the substrate, it is necessary to apply a load necessary for the sealing, and a means for strongly locking the substrate by some method is required. .

Next, a method for cooling the substrate by keeping the substrate and the cooling surface from contacting each other from the beginning and supplying a cooling gas to the gap will be described. As a conventional example of this method, there are JP-A-3-174719 and JP-A-4-6270 in which the substrate is mechanically locked to the cooling surface from the front surface or the side surface. In these examples, since the substrate is mechanically locked, there is a problem that foreign matter is likely to be generated from the locking portion. In addition, Japanese Patent Laid-Open No. 63-102319 and Japanese Patent Laid-Open No. 2-30
Japanese Patent No. 128 does not particularly lock the substrate but relies on the weight of the substrate. In such a case, the pressure of the cooling gas must be kept low in order to prevent the leakage amount of the cooling gas from becoming too large and to prevent the substrate from floating. Therefore, there is a problem that the cooling efficiency is reduced.

Electrostatic attraction is known as a method for electrically locking a substrate. An example in which the substrate is locked to the cooling surface by this method and a protrusion is provided on the inner peripheral portion of the substrate is disclosed in Japanese Patent Laid-Open No. 62-20.
Japanese Patent No. 8647. As a conventional example in the specification of JP-A-62-20864, an electrode in which a substrate and a cooling surface are in contact with each other only at a plurality of dispersed protrusions on an outer peripheral portion and an inner peripheral portion of the substrate is introduced. There is. In this conventional example, the adsorbed gas is likely to leak and the adsorbing force may become unstable. As an improved version, it is effective to provide the protrusions only on the inner peripheral portion without protruding the outer peripheral portion, and further to provide the protrusions on the inner peripheral portion in the central portion without being dispersed. In this case, the gap between the substrate and the cooling surface becomes non-uniform within the substrate surface, resulting in a difference in pressure on the back surface of the substrate. Further, even if the pressure distribution is not so large, if the gap between the back surface of the substrate and the cooling surface is different, the ratio of the mean free path of the cooling gas and the gap has a distribution within the substrate surface, as can be seen from FIG. Since there is a difference in cooling efficiency, the temperature distribution of the substrate tends to be large. Further, in the electrostatic adsorption method shown in this example, positive and negative electrodes are provided in the cooling unit, and a DC high voltage is ignited for electrostatic adsorption. In such an electrostatic adsorption method, when the substrate is processed in plasma, non-uniformity is likely to occur in the amount of charges on the substrate surface due to the ions and electrons irradiated on the substrate, and a current flows on the substrate surface, The problem of damaging can also occur.

[0009]

The above-mentioned conventional techniques are focused on efficiently cooling the substrate.
However, due to the recent increase in the degree of integration of semiconductor devices,
It is necessary to reduce foreign substances and heavy metal contamination that are smaller than before. The same applies to the adhesion of foreign matter on the back surface of the substrate. If the amount of foreign matter adhered to the back surface of the substrate is large, there is a problem that the foreign matter on the back surface adheres to the front side of the adjacent substrate or is separated from the substrate and adheres to another substrate in the next step. Therefore, the reduction of foreign matter on the back surface is an important issue for stabilizing the process and improving the yield. The foreign matter adheres to the back surface of the substrate only when the other surface of the substrate comes into contact with the back surface of the substrate, and a large number of foreign matter adheres to the substrate cooling surface.

The object of the present invention is to reduce this backside foreign matter,
At the same time, the cooling efficiency of the substrate should be kept sufficiently high. It is also intended to prevent substrate damage that occurs during processing of the substrate.

[0011]

In order to reduce foreign matter on the back surface of the substrate, it is effective to reduce the contact area between the cooling surface and the substrate. However, it is necessary to maintain the distance between the cooling surface and the back surface of the substrate to such an extent that the cooling efficiency by the cooling gas does not decrease so much. In order to realize this, a slight step is provided on the cooling surface so that the back surface of the substrate and the cooling surface do not come into contact with each other regardless of the introduction of the cooling gas. Further, the convex portion of the step provided on the cooling surface makes contact with the cooling surface and the back surface of the substrate, but this area is the minimum necessary. This is achieved by providing the cooling surface with an electrostatic adsorption function and locking the substrate with the cooling surface convex portion. Also, it is necessary to consider the prevention of cooling gas leakage, but this is because the cooling surface corresponding to the outer periphery of the substrate is provided with a convex part with a smooth surface, and the cooling surface and the back surface of the substrate are brought into contact by electrostatic attraction and locked. However, it is achieved by preventing the leakage of the cooling gas. Further, the prevention of damage to the substrate is achieved by connecting an electric circuit for electrostatic adsorption from the substrate side to a grounding part such as a vacuum container via plasma to minimize the potential difference in the surface of the substrate.

[0012]

According to the present invention, since the back surface of the substrate and the cooling surface are not in contact with each other in most of the area of the substrate, it is possible to prevent foreign substances from being attached due to the contact. Further, in cooling the substrate, the cooling efficiency is slightly reduced at the same cooling gas pressure as compared with the case where the substrate and the cooling surface are in contact, but the step of the cooling surface is about 100 times or less than the mean free path of the cooling gas. With this, sufficient cooling efficiency can be obtained. Further, the gap between the back surface of the substrate and the cooling surface is large as compared with the conventional cooling method in which the substrate and the cooling surface are entirely in contact with each other. For this reason, the conductance between both surfaces is increased, and the supply and exhaust of the cooling gas are easily performed, that is, the supply / exhaust time of the cooling gas is shortened, and the substrate processing time can also be shortened. Further, the conductance of the contact portion between the outer peripheral portion of the substrate and the cooling surface is much smaller than the non-contact portion of the inner peripheral portion of the substrate (in the molecular flow region, it is proportional to the square of the gap), and the pressure difference in the non-contact portion is small. There is also an effect that it becomes smaller, that is, the cooling efficiency becomes uniform.

[0013]

An embodiment of the present invention will be described with reference to the drawings.
FIG. 2 shows a cross section of a substrate holding device for holding a substrate by the substrate holding method of the present invention. In FIG. 2, the substrate 1 is placed on the convex portion 3 of the supporting member 2 of the substrate,
Moreover, the convex portion 3 of the supporting member 2 is connected to an electrostatic attraction circuit (not shown) not shown in the figure, and the substrate 1 is locked to the supporting member 2 by the convex portion 3. The support member 2 is provided with a flow path through which the coolant 4 for cooling the substrate 1 flows. The coolant is supplied from the supply unit 5 schematically shown, taken out from the discharge unit 6, and the temperature of the support member 2 is controlled. Also,
A channel for the cooling gas 7 is provided in the center of the support member 2 to supply and exhaust the cooling gas 7. The temperature control of the substrate 1 is achieved by the heat conduction between the temperature-controlled support member 2 and the substrate 1 by the cooling gas 7 filled in the recess 8 of the support member 2. Substrate 1 supporting member 2
FIG. 3 shows an electrostatic attraction circuit for locking to. The processing of the substrate 1 will be described by taking a μ wave plasma etching apparatus as an example. In FIG. 3, the substrate holding device 9 on which the substrate 1 is placed is installed in the etching chamber 10. The etching chamber 10 is evacuated by a vacuum pump 11, and a gas required for etching is supplied from a gas supply unit (not shown). A high frequency power source 12 and a direct current power source 13 are connected to the substrate holding device 9. The μ wave is introduced into the etching chamber 10 through the quartz window 15 through the waveguide 14. When the high frequency power source 12 is operated or the μ wave is introduced, plasma 17 is generated in the etching chamber 10. At this time, the electrostatic attraction circuit 17 is passed through the substrate holding device 9, the substrate 1, and the plasma 16 by the potential of the DC power supply 13.
Is formed. In this state, the substrate 1 is locked to the substrate holding device 9, that is, the substrate supporting member 2 in FIG. 2 by electrostatic force. The electrostatic attraction force is generated by the dielectric 18 attached or formed on the surface of the support member 2. As the dielectric 18, for example, aluminum oxide or a mixture of aluminum oxide and titanium oxide can be used. Also, several hundreds of volts are applied as the DC voltage for generating the electrostatic force. In this way, the substrate was electrostatically attracted to the convex portion 3 of the supporting member 2 in FIG. The electric potential for electrostatic attraction was applied by the DC power supply 13, but the electric potential is uniform in the support member 2 and the same in the convex portion 3, and the outer peripheral portion of the substrate 1 has a uniform electric potential. There is. Therefore, the potential difference generated in the plane of the substrate 1 is due to the distribution of electrons and ions with which the substrate 1 is irradiated, and a high potential difference that damages the substrate 1 does not occur. On the other hand, when positive and negative electrodes are formed in the support member 2 and electrostatic adsorption is performed by the electrodes, a high potential difference may occur in the substrate 1 and the substrate may be damaged.

The cooling gas 7 is supplied to the back surface of the substrate 1 thus locked. The cooling gas 7 is filled in the concave portion 8 of the supporting member 2, and the pressure thereof is in the range of several torr to several tens of torr. Further, if the gap of the recess 8 is from several tens of μm to 0.1 to 0.2 mm, the reduction in cooling efficiency can be neglected. The electrostatic attraction force is almost zero between the concave portions 8 provided with the gap, and it can be considered that the electrostatic attraction force is generated only in the convex portions 3. However, the voltage can be appropriately set in the DC power supply 13 to set the adsorption force that can sufficiently withstand the pressure of the cooling gas 7, so that the cooling gas 7
Therefore, the substrate 1 will not move or be skipped.

The support member 2 is cooled by a coolant 4 and its temperature is controlled. Therefore, the cooling gas 7 cooled on the support member surface of the recess 3 reaches the substrate 1 directly or while colliding with other cooling gas several times. The cooling gas reaching the substrate 1 obtains energy from the substrate 1, that is, cools the substrate 1 and returns to the support member side again, and repeats the cycle of cooling the substrate 1. When the pressure of the cooling gas 7 is sufficiently higher than the pressure having the mean free path corresponding to the gap of the recess 3, in addition to the behavior of the gas molecules described above, the gas molecules collide with each other to transfer energy, The phenomenon that the thermal energy of the substrate 1 is transferred to the cooling surface of the support member 2 also increases. However, the transport of heat energy within the scope of the present invention is heat conduction using the cooling gas 7 as a medium. For example, the cooling gas 7 is not preliminarily cooled by a separately provided cooling unit to be convected to the back surface of the substrate 1, and the substrate is not cooled by the heat capacity of the gas. The gap of the recess 3 and the pressure of the cooling gas 7 satisfying such conditions are set.

The rate of energy transfer between the cooling gas 7 and the support member 3 is represented by a value called a heat adaptation coefficient. This thermal adaptation coefficient depends on the type of cooling gas and the surface condition of the member (condition of contamination, etc.). The same is true between the substrate 1 and the cooling gas 7. As the cooling gas 7, helium is used because it has little effect on the etching characteristics even if it leaks and the supply / exhaust time of the cooling gas 7 can be made shorter than other gases. But besides that,
The cooling efficiency of nitrogen, argon, etching gas, or the like varies, but is not particularly limited.

Now, the substrate 1 is sufficiently cooled by the intermediation of the cooling gas 7. Further, the substrate 1 is in contact with the support member 2 only by the convex portion 3. It is only on the back surface of the substrate corresponding to the convex portion 3 that foreign matter may be generated on the back surface of the substrate due to contact with other members. Also,
If the supporting member 2 has a larger area than the substrate 1 and there is a surface on the outside of the substrate 1 shown in FIG. 2, plasma may be applied to the outside surface of the substrate 1 to cause etching. Due to the adhesion of the etching reaction product No. 1 and the like, the foreign matter adheres to the front side of the substrate 1 through the surface.

In that sense, FIG. 2 shows the support member 2 smaller than the substrate 1. However, the effect of reducing foreign matter on the back surface in the present invention is not impaired even if the support member 2 is larger than the substrate 1.

Next, another embodiment of the present invention is shown in FIG. The embodiment shown in FIG. 4 is basically the same as the example shown in FIG. 2, except that a pusher 19 for delivering the substrate 1 is provided. By pushing the pusher 19 up and down, the substrate 1 is moved to the supporting member 2
Handed over from. The pusher 19 has to be moved up and down each time the substrate 1 is processed. That is, it is necessary to move independently of the support member 2. Therefore, it is necessary to provide a gap between the support member 2 and the pusher 19. The cooling gas 7 leaks through this gap. The leakage amount of the cooling gas 7 needs to be suppressed to the minimum. In order to make this possible, an inner peripheral side convex portion 20 having a surface substantially the same as or at the same height as the convex portion 3 is provided around the pusher 19. Since this surface is flat and is in contact with the substrate 1, the leakage amount of the cooling gas 7 can be suppressed within the allowable amount. Figure 1 substrate 1
The example of FIG. 5 is seen from above with the removed.
A supply / exhaust port 21 for the cooling gas 7 is provided in the center of the support member 2, and a pusher 19 and an inner peripheral side convex portion 20 are arranged around the supply / exhaust port 21. The inner peripheral side convex portion 20 can also serve to receive the bending of the substrate 1.

In FIG. 5, the inner peripheral convex portion 20 has a circular shape, but this shape is not particularly limited. The ring-like shape is the embodiment shown in FIG. Ring-shaped protrusion 22
In addition to the pusher 19, there are provided a temperature sensor 23 for the substrate 1, a substrate detection sensor 24 for detecting the presence or absence of the substrate, and a ground terminal 25 for setting the potential of the substrate 1 to the ground potential. In order to quickly supply and exhaust the cooling gas 7 to and from the concave portion 8, a part of the ring-shaped convex portion 22 is cut out so that the cooling gas 7 can easily pass through.

If the temperature sensor 23 is a fluorescence thermometer in a device used in plasma, there is no fear of noise. Further, the substrate detection sensor 24 introduces laser light through, for example, an optical fiber and irradiates the back surface of the substrate 1 with the laser light. The presence / absence of the substrate 1 is detected based on the presence / absence of the reflected light. Moreover, since the output of the temperature sensor 23 varies depending on the presence or absence of the substrate 1, the change can be used for detecting the presence or absence of the substrate 1.

The ground terminal 25 is the substrate 1 that is electrostatically adsorbed.
Is used before being lifted by the pusher 19 and handed over. The pusher 19 cannot be used while the residual attraction force is present on the substrate 1 charged by electrostatic attraction.
Therefore, in order to reduce the waiting time, it is sometimes desired to drop the substrate 1 to the ground. The potential of the substrate 1 is grounded by moving the ground terminal 25 up and down to contact the substrate 1. Although the ground terminal 25 is made of a conductive material, it is also effective to use silicon carbide or the like having a resistivity significantly higher than that of a normal metal or the like in order to avoid abnormal discharge during plasma processing. In addition, this function, pusher 19
It is also possible to combine the two. Although various sensors are arranged on the same supporting member in FIG. 6, the use of each of them does not impair the gist of the present invention.

The substrate processing apparatus equipped with the substrate holding device 9 shown in FIGS. 2 and 3 to 6 is the apparatus of FIG. By using the substrate holding device 9 of the present invention, foreign matters attached to the back surface of the substrate 1 are reduced. Further, by using the substrate 1 processed by this substrate processing apparatus, the back surface foreign matter is attached to the surface of another adjacent substrate, or the foreign material is melted or detached from the back surface, thereby contaminating the substrate. It is prevented from causing.

The embodiments of the present invention have been described above. Although the present invention has been described with the substrate cooling in mind,
Even when the substrate is heated, it is needless to say that there is essentially no difference because the support member is maintained at a temperature higher than that of the substrate.

[0025]

According to the present invention, the amount of foreign matter attached to the back surface of the substrate can be reduced while surely cooling the substrate. Further, since the substrate is locked by electrostatic attraction, it is not necessary to use a substrate locking jig that comes into contact with the substrate on the front side of the substrate, and foreign substances on the front side of the substrate can be reduced. Further, there is also an effect that the processing of the substrate on the front side of the substrate is carried out on the entire surface of the substrate without being hindered by the substrate locking jig. As a result, the yield of substrate processing can be improved by reducing foreign matter on the back surface. In addition, foreign substances on the front side of the substrate can be reduced, yields can be further improved, and the number of device chips obtained from one substrate can be increased.

Further, the substrate is not damaged due to the conventional electrostatic attraction electrode, and the yield can be improved from this aspect.

[Brief description of drawings]

FIG. 1 is an explanatory diagram illustrating heat conduction in a vacuum.

FIG. 2 is a device sectional view of a substrate holding method of the present invention.

FIG. 3 is an explanatory diagram of a substrate processing apparatus that carries out the substrate holding method of the present invention.

FIG. 4 is a sectional view of a device according to another embodiment of the present invention.

FIG. 5 is a top view of the substrate holding portion of the present invention.

FIG. 6 is a top view of the substrate holding portion of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Support member, 3 ... Convex part, 4 ... Refrigerant, 5 ... Supply port, 6 ... Discharge port, 7 ... Cooling gas, 8 ... Recessed part, 9 ... Substrate holding device, 10 ... Etching chamber, 11 …Vacuum pump,
12 ... High frequency power source, 13 ... DC power source, 14 ... Waveguide, 1
5 ... Quartz window, 16 ... Plasma, 17 ... Electrostatic adsorption circuit, 1
8 ... Dielectric material, 19 ... Pusher, 20 ... Inner peripheral side convex portion, 2
DESCRIPTION OF SYMBOLS 1 ... Cooling gas supply / exhaust port, 22 ... Ring-shaped convex part, 23 ... Temperature sensor, 24 ... Substrate detection sensor, 25 ... Ground terminal.

Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/3065

Claims (11)

[Claims] 1. A substrate holding method for holding a substrate for processing the substrate, wherein the substrate is locked on a supporting member having a temperature control function for the substrate,
Gas is supplied from the gas supply unit provided on the support member to the support member and the back surface of the substrate, the substrate is cooled by using the gas as a medium, and the outer peripheral portion of the substrate is brought into contact with the support member to provide the back surface of the substrate. A method of holding a substrate, characterized in that leakage of gas supplied to the substrate is prevented. 2. The substrate holding method according to claim 1,
Plasma is used for processing the substrate, an electric circuit is formed from the substrate holding method through the substrate and plasma, and the substrate is locked by an electrostatic force generated by the electric circuit. . 3. The substrate holding method according to claim 1 or 2,
A method of holding a substrate, characterized in that the substrate is locked by an electrostatic force on a gas leakage prevention surface of the supporting member facing an outer peripheral portion of the substrate. 4. A substrate holding device for holding the substrate for processing the substrate, wherein the substrate is locked on a supporting member having a temperature control function for the substrate,
Gas is supplied from the gas supply unit provided on the support member to the support member and the back surface of the substrate, the substrate is cooled by using the gas as a medium, and the outer peripheral portion of the substrate is brought into contact with the support member to provide the back surface of the substrate. A substrate holding device, which is configured to prevent leakage of gas supplied to the substrate holding device. 5. The substrate holding device according to claim 4,
A substrate holding device, wherein a substrate supporting portion for preventing deformation of the substrate is provided on the supporting member inside the gas leakage prevention surface of the outer peripheral portion of the substrate. 6. The substrate holding device according to claim 4, wherein a delivery member for the substrate is provided on an inner peripheral side of a gas leakage prevention surface of the support member, and the support member and the support member are provided around the delivery member. A substrate holding device, characterized in that an area where the back surface of the substrate comes into contact is provided to prevent the gas of the cooling medium from leaking through the installation portion of the delivery member. 7. The substrate holding device according to claim 6,
A substrate holding device, wherein a gas leakage prevention surface provided around the transfer section is an adsorption surface using electrostatic force. 8. The substrate holding device according to claim 4, wherein the substrate transfer part and the substrate support part are combined. 9. The substrate holding device according to claim 4, wherein a member for measuring the temperature of the substrate is installed on the supporting member. 10. The substrate holding device according to claim 9, wherein a region where the supporting member and the back surface of the substrate are in contact with each other is provided around the temperature measuring member, and a gas of a cooling medium passes through an installation portion of the temperature measuring member. A substrate holding device, characterized in that leakage is prevented. 11. The substrate holding device according to claim 10, wherein the gas leakage prevention surface provided around the temperature measuring member is an adsorption surface using an electrostatic force.