JP3265743B2 - Substrate holding method and substrate holding device - Google Patents
Substrate holding method and substrate holding deviceInfo
- Publication number
- JP3265743B2 JP3265743B2 JP23018793A JP23018793A JP3265743B2 JP 3265743 B2 JP3265743 B2 JP 3265743B2 JP 23018793 A JP23018793 A JP 23018793A JP 23018793 A JP23018793 A JP 23018793A JP 3265743 B2 JP3265743 B2 JP 3265743B2
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- Japan
- Prior art keywords
- substrate
- contact
- contact holding
- sample stage
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板を冷却する必要の
ある基板処理プロセスを確実にするための、基板保持装
置及び真空処理装置に関する。The present invention relates to a for ensuring the substrate treatment process that needs to cool the substrate to a board holding device and the vacuum processing apparatus.
【０００２】[0002]
【従来の技術】基板処理装置において、基板を冷却する
必要がある装置には、プラズマ処理装置として、スパッ
タ装置、ドライエッチング装置、ＣＶＤ（Ｃｈｅｍｉｃ
ａｌＶａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）装置などがあ
り、また、高エネルギイオン打ち込みを行う装置等、多
くの装置がある。これらの装置では、処理雰囲気が真空
であることが多く、熱の伝わり方が低下するため，大気
中のように冷却面に基板を接触させて冷却することが困
難となっている。真空（希薄気体）中での熱伝導の問題
は、種々の文献で論じられているが、通常の接触面同士
が接触しても真の接触面積が小さいことなどから、接触
による熱伝導量は小さい。特に、基板と冷却面との熱伝
導では、基板を強く冷却面に押し付けることは基板の破
損の面から困難である。そのため、基板が接触する面に
柔らかなエラストマーを用いるなどの工夫が行われてい
た。しかし、基板の熱負荷が増加したり、さらに低温に
基板を冷却する必要がでてきたため、最近では、基板と
冷却面の間にガスを導入し、ガスを媒体として基板の冷
却を行うことが主流となっている。2. Description of the Related Art In a substrate processing apparatus, an apparatus which needs to cool a substrate includes a plasma processing apparatus such as a sputtering apparatus, a dry etching apparatus, and a CVD (Chemic) apparatus.
There are many devices such as an AlVapor Deposition device and a device for performing high-energy ion implantation. In these apparatuses, the processing atmosphere is often in a vacuum, and the manner in which heat is transmitted is reduced. Therefore, it is difficult to cool the substrate by bringing the substrate into contact with a cooling surface as in the air. The problem of heat conduction in a vacuum (dilute gas) has been discussed in various documents. However, even if the normal contact surfaces are in contact with each other, the true contact area is small. small. In particular, in heat conduction between the substrate and the cooling surface, it is difficult to strongly press the substrate against the cooling surface from the viewpoint of damage to the substrate. For this reason, various measures have been taken, such as using a soft elastomer on the surface that contacts the substrate. However, the heat load on the substrate has increased, and it has become necessary to cool the substrate to a lower temperature.Therefore, recently, gas has been introduced between the substrate and the cooling surface, and the substrate has been cooled using the gas as a medium. It has become mainstream.
【０００３】ガス冷却の基板保持装置にも種々の方式が
ある。大きく分けて、（１）基板の裏面と冷却面が接触
しており、両者の表面粗さに起因して生じている隙間を
通じて冷却ガスを導入しガス冷却する方式、（２）基板
裏面と冷却面の間に冷却ガスを導入することは同じであ
るが、両者が接触していない方式、に分類できる。There are various types of gas-cooled substrate holding devices. Broadly speaking, (1) a method in which the back surface of the substrate and the cooling surface are in contact with each other, and a cooling gas is introduced through a gap generated due to the surface roughness of both to perform gas cooling; The introduction of the cooling gas between the surfaces is the same, but can be classified into a method in which the two are not in contact.
【０００４】前者に該当する従来例としては、例えば特
公平２ー２７７７８号、特開昭６２ー２７４６２５号、
特開平１ー２５１３７５号、特開平３ー１５４３３４
号、実開平４ー８４３９号がある。また、（２）の例と
しては、例えば特開昭６３ー１０２３１９号、特開平２
ー３１２２２３号、特開平３ー１７４７１９号等があ
る。また、冷却ガスを導入する前は、基板裏面と冷却面
が接触しているが、冷却ガスを導入したことによるガス
圧で基板が浮き上がり、冷却中は基板と冷却面が接して
いない特開平２ー３０１２８号の様な例もある。Conventional examples corresponding to the former include, for example, Japanese Patent Publication No. 2-27778, Japanese Patent Laid-Open No. 62-274625,
JP-A-1-251375, JP-A-3-154334
No. 4-8439. Examples of (2) include, for example, JP-A-63-102319,
And Japanese Patent Application Laid-Open No. 3-174719. Before the introduction of the cooling gas, the back surface of the substrate and the cooling surface are in contact with each other, but the substrate is lifted by the gas pressure due to the introduction of the cooling gas, and the substrate is not in contact with the cooling surface during cooling. There is an example like -30128.
【０００５】これらの冷却において、ある特定の冷却ガ
スを使用するとして、冷却ガスによる冷却能力（熱通加
量の大小）は、冷却ガス圧力及び基板裏面と冷却面の距
離（基板裏面のギャップ）に依存する。冷却ガスの圧力
が低い場合は熱通加量が冷却ガス圧力に比例し、両面の
間隙の大小（ギャップ）には依存しない。真空中におけ
る熱伝導特性を模式的に図７に示す。冷却ガスの平均自
由行程とギャップがほぼ一致する程度の圧力Ｐ0以上に
冷却ガス圧力が高い場合は、熱通加量はほぼ一定とな
り、ガス圧力に依存しなくなる。上記の例では、冷却ガ
ス圧力は（１）の例では熱通加量が圧力に比例する領
域、（２）の例は熱通加量が圧力に依存しない領域、で
あることが多い。In this cooling, assuming that a specific cooling gas is used, the cooling capacity (amount of heat applied) by the cooling gas depends on the cooling gas pressure and the distance between the back surface of the substrate and the cooling surface (gap of the back surface of the substrate). Depends on. When the pressure of the cooling gas is low, the amount of heat passing is proportional to the pressure of the cooling gas, and does not depend on the size of the gap on both surfaces (gap). FIG. 7 schematically shows the heat conduction characteristics in a vacuum. When the cooling gas pressure is higher than the pressure P0 at which the gap almost coincides with the mean free path of the cooling gas, the amount of heat passing becomes substantially constant and does not depend on the gas pressure. In the above example, in many cases, the cooling gas pressure is in the region where the amount of heat applied is proportional to the pressure in the example of (1) and in the region of (2) where the amount of heat applied is not dependent on the pressure in many cases.
【０００６】以下、各種の基板の冷却方法の特徴と問題
点について述べる。はじめに基板と冷却面が接触したま
まで冷却する場合について述べる。この例に属するもの
は、特公平２ー２７７７８号、特開昭６２ー２７４６２
５号、特開平１ー２５１３７５号、特開平３ー１５４３
３４号、実開平４ー８４３９号である。この種の冷却方
法では、基板と冷却面は接触しているが、詳細に見ると
冷却面表面の最も凸の部分で基板と接する。冷却面及び
基板の凹部は、互いに接しておらず、その間隙は各々の
表面粗さにもよるが、およそ１０μｍから５０μｍ程度
である。冷却ガスをその間隙に導入する場合、その圧力
は数トール（Ｔｏｒｒ）程度であることが多く、平均自
由行程とほぼ等しい領域である。したがって、図７に示
したように、圧力を適切に設定することで、十分な冷却
効率が得られる。ただし、特公平２ー２７７７８号の図
に示してあるように、冷却ガスの供給を特定の一箇所か
ら行うと、冷却ガスは供給部で最も圧力が高く、基板の
外周部に行くにつれ圧力が低下する。図７に示したよう
に冷却効率に圧力依存性があるため、基板面内で圧力分
布が生ずると、冷却効率に不均一さが生じ温度の均一性
が損なわれるという問題がある。冷却ガスが漏れなけれ
ば、すなわちガスの流れがなければ、圧力分布は生ぜ
ず、温度分布も均一になる。しかし、このようにするに
は、基板外周部をシールする必要がある。その例が、特
開昭６２ー２７４６２５号や実開平２ー１３５１４０号
である。また、冷却ガスの供給部を複数箇所から行い、
基板裏面の圧力分布を均一化するようにしたのが特開平
１ー２５１７３５号、特開平４ー６１３２５号である。
いずれにしても、これらの冷却方法においては、基板裏
面と冷却面は広い面積で接触しており、基板裏面に冷却
面に接触したことで付着する異物の数が多いという問題
がある。また、基板外周部をシール材を用いて冷却ガス
の漏れを防止するためには、シールに必要な荷重を負荷
する必要があり、基板を何等かの方法で強く係止する手
段が必要である。Hereinafter, features and problems of various types of substrate cooling methods will be described. First, a case where cooling is performed while the substrate and the cooling surface are in contact with each other will be described. Those belonging to this example are disclosed in Japanese Patent Publication No. 27778/1990 and Japanese Patent Laid-Open No.
No. 5, JP-A-1-251375, JP-A-3-1543
No. 34 and Japanese Utility Model No. 4-8439. In this type of cooling method, the substrate and the cooling surface are in contact, but when viewed in detail, the substrate is in contact with the most convex portion of the surface of the cooling surface. The cooling surface and the concave portion of the substrate are not in contact with each other, and the gap is about 10 μm to 50 μm depending on the surface roughness. When a cooling gas is introduced into the gap, the pressure is often on the order of several Torr, which is a region almost equal to the mean free path. Therefore, as shown in FIG. 7, by setting the pressure appropriately, sufficient cooling efficiency can be obtained. However, as shown in the figure of Japanese Patent Publication No. 2-27778, when the cooling gas is supplied from a specific location, the cooling gas has the highest pressure in the supply portion, and the pressure increases as it goes to the outer peripheral portion of the substrate. descend. As shown in FIG. 7, since the cooling efficiency has pressure dependency, there is a problem that if pressure distribution occurs in the substrate surface, the cooling efficiency becomes non-uniform and the temperature uniformity is impaired. If the cooling gas does not leak, that is, if there is no gas flow, no pressure distribution occurs and the temperature distribution becomes uniform. However, to do so, it is necessary to seal the outer peripheral portion of the substrate. Examples thereof are JP-A-62-274625 and JP-A-2-135140. Also, the cooling gas supply section is performed from multiple places,
JP-A-1-251735 and JP-A-4-61325 attempt to make the pressure distribution on the back surface of the substrate uniform.
In any case, in these cooling methods, there is a problem that the back surface of the substrate and the cooling surface are in contact with each other over a wide area, and a large number of foreign substances adhere to the back surface of the substrate due to the contact with the cooling surface. Further, in order to prevent the leakage of the cooling gas by using a sealing material on the outer peripheral portion of the substrate, it is necessary to apply a load required for sealing, and a means for strongly locking the substrate by some method is required. .
【０００７】次に、基板と冷却面を初めから接触しない
ようにし、その間隙に冷却ガスを供給して冷却する方法
について述べる。この方法の従来例としては、基板表面
あるいは側面から基板を冷却面に機械的に係止した特開
平３−１７４７１９号や特開平４−６２７０号がある。
これらの例は、機械的に基板を係止しているため、係止
部から異物が発生し易いという問題がある。また、特開
昭６３−１０２３１９号や特開平２−３０１２８号は、
特に基板の係止を行っておらず、基板の自重に頼ってい
る。このような場合に、冷却ガスの漏れ量をあまり大き
くしないようにしたり、基板が浮き上がらないようにす
るためには、冷却ガスの圧力を低く抑えなければならな
い。そのため、冷却効率が低下するという問題がある。Next, a method of cooling the substrate by keeping the substrate and the cooling surface from contacting each other from the beginning and supplying a cooling gas to the gap will be described. As conventional examples of this method, there are JP-A-3-174719 and JP-A-4-6270 in which a substrate is mechanically locked to a cooling surface from the substrate surface or side surface.
In these examples, since the substrate is mechanically locked, there is a problem that foreign matter is easily generated from the locking portion. Also, JP
The Sho 63-102319 and JP-A-2-30128,
In particular, the board is not locked, and relies on its own weight. In such a case, the pressure of the cooling gas must be kept low in order not to increase the leakage amount of the cooling gas or to prevent the substrate from floating. Therefore, there is a problem that the cooling efficiency is reduced.
【０００８】電気的に基板を係止する方法として、静電
吸着が知られている。この方法で基板を冷却面に係止
し、基板の内周部に突起を設けた例が特開昭６２−２０
８６４７号である。特開昭６２−２０８６４７号の明細
書の従来例として、基板外周部および内周部の複数個の
分散して配された突起部でのみ基板と冷却面が接してい
る電極が紹介されている。この従来例は、吸着ガスが漏
れ易く吸着力が不安定になることがあるとしている。As a method for electrically locking the substrate, electrostatic attraction is known. An example in which a substrate is locked on a cooling surface by this method and a projection is provided on the inner peripheral portion of the substrate is disclosed in Japanese Patent Laid-Open No. 62-20 / 1987.
No. 8647. As a conventional example of the specification of JP 62-20864 No. 7, only introduced the electrode substrate and the cooling surface is in contact with projections arranged in a plurality of dispersion of the substrate outer peripheral portion and inner peripheral portion I have. According to this conventional example, the adsorbed gas is likely to leak and the adsorbing force may become unstable.
【０００９】その改良版として、外周部を突き出さず内
周部にのみ突起部を設け、さらに、内周部の突起部を分
散させず中央部に設けることが有効としている。この場
合は、基板と冷却面の間隙が基板面内で不均一となり、
基板裏面の圧力に差が生ずる。また、圧力分布がそれほ
ど大きくないとしても、基板裏面と冷却面の間隙が異な
ると、冷却ガスの平均自由行程とその間隙の比が基板面
内で分布を持つことになり、図７から分かるように冷却
効率の違いが生ずるため、基板の温度分布が大きくなり
易いという問題がある。また、この例で示されている静
電吸着方式は、冷却部に正負の電極を設け、直流高電圧
を印加して静電吸着するようになっている。このような
静電吸着方式では、基板をプラズマ中で処理する際に基
板に照射されるイオンや電子による基板表面の電荷量に
不均一性が発生し易く、基板表面に電流が流れ、基板に
損傷を与えるという問題が発生することもある。As an improved version thereof, it is effective to provide a projection only on the inner periphery without protruding the outer periphery, and to provide the projection on the inner periphery at the center without dispersing. In this case, the gap between the substrate and the cooling surface becomes uneven in the substrate surface,
A difference occurs in the pressure on the back surface of the substrate. Even if the pressure distribution is not so large, if the gap between the back surface of the substrate and the cooling surface is different, the ratio of the mean free path of the cooling gas and the gap has a distribution in the substrate surface, as can be seen from FIG. However, there is a problem that the temperature distribution of the substrate tends to be large because the difference in cooling efficiency occurs. In the electrostatic chuck system shown in this example, positive and negative electrodes are provided in the cooling unit, and a high DC voltage is applied to perform electrostatic chuck. In such an electrostatic adsorption method, when the substrate is processed in plasma, the charge amount on the substrate surface due to ions or electrons applied to the substrate is likely to be non-uniform. Damage problems can also occur.
【００１０】[0010]
【発明が解決しようとする課題】このように、従来の技
術は、基板を効率良く冷却することを重点に考えたもの
である。しかし、近年の半導体デバイスの集積度の増加
により、従来以上に小さい異物や重金属汚染の低減を図
ることが必要になっている。これは、基板裏面の異物付
着についても同様である。基板裏面の異物付着量が多い
と次の工程などで、裏面異物が隣接する基板の表側に付
着したり、一旦基板から離れて別の基板に付着するなど
の問題がある。このため、裏面異物の低減は、プロセス
の安定化や歩留りの向上にとって、重要な課題である。
基板の裏面に異物が付着するのは、他の部材と基板裏面
が接触したときであり、基板冷却面との接触で多数の異
物が付着する。As described above, the prior art focuses on efficient cooling of the substrate. However, with the recent increase in the degree of integration of semiconductor devices, it has become necessary to reduce foreign substances and heavy metal contamination smaller than before. The same applies to the adhesion of foreign matter on the back surface of the substrate. If the amount of foreign matter adhered on the back surface of the substrate is large, there is a problem that foreign matter on the back surface adheres to the front side of the adjacent substrate or separates from the substrate and adheres to another substrate in the next step. Therefore, reduction of foreign matter on the back surface is an important issue for stabilizing the process and improving the yield.
Foreign matter adheres to the back surface of the substrate when another member comes into contact with the back surface of the substrate, and a large number of foreign matter adheres to the substrate cooling surface.
【００１１】また、従来技術はウェハサイズに対する配
慮について記載されておらず、極力小さな吸着力で冷却
ガスが処理室に漏出して、プロセスに与える影響を少な
くするとされているが、吸着力と冷却ガス圧力の相関に
ついては述べられていない。In the prior art, no consideration is given to the consideration of the wafer size, and it is said that the cooling gas leaks into the processing chamber with a minimal adsorption force to reduce the influence on the process. No mention is made of gas pressure correlations.
【００１２】本発明の目的は、上記裏面異物を低減し、
ウェハに対する載置台からの異物転写の少ない、基板保
持方法及び基板保持装置を提供することにある。An object of the present invention is to reduce the above-mentioned foreign matter on the back surface,
It is an object of the present invention to provide a substrate holding method and a substrate holding apparatus, in which foreign matter transfer from a mounting table to a wafer is small.
【００１３】本発明の他の目的は、大口径ウェハにおけ
る変形を押え、基板の冷却効率を十分高く維持すること
のできる基板保持方法及び基板保持装置を提供すること
にある。It is another object of the present invention to provide a substrate holding method and a substrate holding apparatus capable of suppressing deformation of a large-diameter wafer and maintaining a sufficiently high cooling efficiency of the substrate.
【００１４】本発明の他の目的は、基板の処理中に発生
する基板損傷の防止を図ることのできる基板保持方法及
び基板保持装置である。Another object of the present invention is a substrate holding method and a substrate holding apparatus capable of preventing substrate damage occurring during processing of a substrate.
【００１５】本発明の他の目的は、静電吸着後、冷却ガ
ス導入に当って、迅速にウェハ裏面全域に冷却ガスが充
填され、生産性の高い、ウェハ温度制御ができる基板保
持方法及び基板保持装置を提供することにある。Another object of the present invention is to provide a substrate holding method and a substrate capable of controlling a wafer temperature with high productivity, in which a cooling gas is quickly filled in the entire back surface of a wafer upon introduction of a cooling gas after electrostatic attraction. It is to provide a holding device.
【００１６】[0016]
【課題を解決するための手段】本発明の特徴は、試料台
に被処理基板を保持するとともに、処理時に前記試料台
と前記基板の間のガスを媒体として該基板の温度を制御
する基板保持装置において、前記試料台の、基板外周部
に対応する位置に表面が滑らかな環状の漏洩防止面を設
け、さらに前記基板外周部に対応する位置と該基板の中
心に対応する位置の間に、該基板との接触保持部を複数
個設け、前記環状の漏洩防止面及び接触保持部と前記基
板の裏面とを接触させて係止する静電吸着手段を設け、
前記接触保持部を貫通する穴を設け、該穴内に前記基板
の押し上げ用ピンを配置し、前記静電吸着手段は、前記
漏洩防止面及び接触保持部を含む前記試料台の表面に貼
付あるいは形成された誘電体を含み、静電吸着力により
前記漏洩防止面及び接触保持部の表面を前記基板の裏面
に接触させて該基板を係止することにある。A feature of the present invention is that a sample stage is provided.
The substrate to be processed is held at the
Controlling the temperature of the substrate using the gas between the substrate and the substrate as a medium
In the substrate holding apparatus, wherein the sample stage, a surface at a position corresponding to the outer peripheral portion of the substrate is provided with a leakage prevention surface of the smooth annular further position corresponding to the center position and the substrate corresponding to the substrate peripheral portion during provided a plurality of contact holding portions of the substrate, provided the electrostatic attraction means for locking by contacting the back surface of the base <br/> plate and leakage prevention surface and the contact holding portion of the annular,
A hole is formed through the contact holding portion, and the substrate is provided in the hole.
A push-up pin of the
Affixed to the surface of the sample stage including the leakage prevention surface and the contact holder
Including attached or formed dielectric, due to electrostatic attraction
The surface of the leakage prevention surface and the surface of the contact holding portion are connected to the
To lock the substrate by contacting the substrate .
【００１７】基板の裏面異物を低減するには、冷却面と
基板との接触面積を減少させることが有効である。ただ
し、冷却面と基板裏面との距離は、冷却ガスによる冷却
効率があまり低下しない程度に維持する必要がある。こ
れを実現するには、冷却面にわずかな段差を設けて冷却
ガスの導入の有無に拘らず基板裏面と冷却面が接触しな
いようにする。また、冷却面に設けた段差の凸部で、冷
却面と基板裏面が接触するが、この面積は必要最少限と
する。それは、冷却面に静電吸着機能を持たせ、冷却面
凸部で基板を係止することにより達成される。In order to reduce foreign matter on the back surface of the substrate, it is effective to reduce the contact area between the cooling surface and the substrate. However, the distance between the cooling surface and the back surface of the substrate needs to be maintained so that the cooling efficiency by the cooling gas does not decrease so much. To realize this, a slight step is provided on the cooling surface so that the back surface of the substrate does not come into contact with the cooling surface regardless of the presence or absence of the cooling gas. In addition, the cooling surface and the back surface of the substrate come into contact with each other at the convex portion of the step provided on the cooling surface, but this area is set to the minimum necessary. This is achieved by providing the cooling surface with an electrostatic attraction function and locking the substrate with the convex portion of the cooling surface.
【００１８】また、冷却ガスの漏洩防止も考慮しなけれ
ばならないが、これは基板外周部に対応する冷却面に表
面が滑らかな環状の凸部、すなわち漏洩防止面を設け、
静電吸着により冷却面と基板裏面を接触させて係止し、
冷却ガスの漏洩防止を図ることにより達成される。It is also necessary to consider the prevention of leakage of the cooling gas. This is because a cooling surface corresponding to the outer peripheral portion of the substrate is provided with an annular convex portion having a smooth surface, that is, a leakage prevention surface.
The cooling surface and the back surface of the substrate are brought into contact with each other by electrostatic attraction and locked,
This is achieved by preventing leakage of the cooling gas.
【００１９】更に、本発明は次の三つの特徴を有する。
一つは、ウェハのハンドリングに関るプッシャ部に対し
て、異物輸送に対する解を与えている。載置台の内部に
設備され、あるいは載置台を貫通して設備されるプッシ
ャは、他の部材と接触して異物の発生源となる宿命を持
っている。本発明では、余剰の冷却ガスがこの穴を通っ
て載置台の裏側に流れる様になっており、ウェハとは反
対方向に発生した異物を運ぶ仕組となっているので、ウ
ェハへの異物付着を軽減できる。Further, the present invention has the following three features.
One is to provide a solution for foreign matter transport to a pusher unit related to wafer handling. A pusher installed inside the mounting table or installed through the mounting table has a fate to come into contact with other members and to be a source of foreign matter. In the present invention, the surplus cooling gas flows to the back side of the mounting table through this hole, and the mechanism for transporting foreign matter generated in the opposite direction to the wafer is employed. Can be reduced.
【００２０】他の特徴は、載置台裏面にカバーを設備
し、載置台裏面の機構部をより長時間、反応生成物の付
着から保護することにある。載置台の裏側は、冷媒の供
給系統や載置台の上下機構等、複雑な機構が構成される
のが常であり、エッチングによる反応、生成物等がこの
部分に付着すると取扱いが面倒である。これに対し、載
置台裏面にカバーを設備し、このカバーの内側に冷却ガ
スの余剰ガスが流れ込む様にして、処理室の処理時の圧
力よりカバー内の圧力を高めることにより、処理室での
反応生成物がカバー内に入ることを抑制して、載置台裏
面の機構部をより長時間、反応生成物の付着から保護す
ることができる。Another feature is that a cover is provided on the back surface of the mounting table to protect the mechanism on the back surface of the mounting table from adhering reaction products for a longer time. On the back side of the mounting table, a complicated mechanism such as a coolant supply system and a vertical moving mechanism of the mounting table is usually configured, and handling is troublesome if a reaction or a product by etching adheres to this portion. On the other hand, a cover is provided on the back surface of the mounting table, and the excess gas of the cooling gas flows into the inside of the cover so that the pressure in the cover is higher than the pressure at the time of processing in the processing chamber. It is possible to prevent the reaction product from entering the cover, and to protect the mechanism on the back surface of the mounting table from the adhesion of the reaction product for a longer time.
【００２１】また、基板の損傷防止は、静電吸着の電気
回路を基板側からプラズマを介して真空容器などのアー
ス部に接続することにより、基板面内の電位差を最少に
することで達成される。Further, prevention of damage to the substrate is achieved by connecting the electric circuit for electrostatic adsorption from the substrate side to an earth portion such as a vacuum vessel via plasma from the substrate side, thereby minimizing the potential difference in the substrate surface. You.
【００２２】[0022]
【作用】本発明によれば、基板は環状の漏洩防止面及び
その内側に位置する接触保持部により冷却面と接する。
しかし、残りの大部分の領域において、基板裏面と冷却
面が接触していないので、接触に起因する異物付着を防
止できる。また、基板の冷却は、基板と冷却面が接触し
ているときに比較すると、同じ冷却ガス圧力では若干冷
却効率が低下するが、冷却面の段差を冷却ガスの平均自
由行程の１００倍程度以下にすることで十分な冷却効率
が得られる。さらに、基板と冷却面を全面的に接触させ
ている従来の冷却方法に比較すると、基板裏面と冷却面
間のギャップが大きい。このため、両面間のコンダクタ
ンスが大きくなり、冷却ガスの供給および排気が容易に
行われる、すなわち冷却ガスの給排気時間が短くなり、
基板処理時間を短縮することもできる。さらに、基板外
周部と冷却面の接触部のコンダクタンスは、基板内周部
の非接触部に比較すると非常に小さく（分子流領域では
間隙の二乗に比例する）、非接触部での圧力差が小さく
なる、すなわち冷却効率が一様になるという作用もあ
る。According to the present invention, the substrate comes into contact with the cooling surface by the annular leakage prevention surface and the contact holding portion located inside the surface.
However, since the back surface of the substrate and the cooling surface are not in contact with each other in most of the remaining regions, it is possible to prevent foreign matter from being caused by the contact. When the substrate is cooled, the cooling efficiency is slightly reduced at the same cooling gas pressure as compared to when the substrate and the cooling surface are in contact with each other, but the step of the cooling surface is about 100 times or less the mean free path of the cooling gas. By doing so, sufficient cooling efficiency can be obtained. Furthermore, the gap between the back surface of the substrate and the cooling surface is larger than that of the conventional cooling method in which the substrate and the cooling surface are entirely contacted. For this reason, the conductance between both surfaces becomes large, and the supply and exhaust of the cooling gas are easily performed.
Substrate processing time can also be reduced. Furthermore, the conductance at the contact portion between the outer peripheral portion of the substrate and the cooling surface is very small as compared with the non-contact portion at the inner peripheral portion of the substrate (in the molecular flow region, the conductance is proportional to the square of the gap). There is also an effect that the cooling efficiency becomes uniform, that is, the cooling efficiency becomes uniform.
【００２３】冷却ガスを媒体としてウェハを温度制御す
る時、必要な冷却ガスの圧力は２Torr以上が必要で、こ
の圧力は高いほど熱伝達の効率は良くなる。一方、静電
吸着力は、制御しようとするウェハの温度に大きく依存
し、現状実用化されているプロセスでは、−60℃〜＋15
0℃程度であり、汎用的な印加電圧300〜1000Ｖの下で安
定して得られる吸着力は40〜100gf/cm2である。冷却ガ
スの圧力制御については、ガス供給系の時定数やウェハ
と載置台と接触面の粗さの相対関係等によって大きく変
動するために、精密に圧力を制御することは困難であ
る。従って、例えば10Torr±５Torr程度の制御になる。When controlling the temperature of a wafer using a cooling gas as a medium, the required pressure of the cooling gas must be 2 Torr or more, and the higher the pressure, the better the heat transfer efficiency. On the other hand, the electrostatic attraction force greatly depends on the temperature of the wafer to be controlled, and is -60 ° C. to +15
It is about 0 ° C., and the adsorption force stably obtained under a general-purpose applied voltage of 300 to 1000 V is 40 to 100 gf / cm 2 . The pressure control of the cooling gas greatly varies depending on the time constant of the gas supply system and the relative relationship between the roughness of the contact surface between the wafer, the mounting table, and the like, so that it is difficult to precisely control the pressure. Therefore, the control is, for example, about 10 Torr ± 5 Torr.
【００２４】これらを前提に前記公知例と対比して見る
と、先ず接触すべき位置について少なくともウェハ外周
辺を吸着とあるが、ウェハ外周辺を支持して、裏面に圧
力10Torrでガスを充填するとウェハの変形量は0.1〜0.2
5mmも変形する。この値は、ウェハのエッチング加工精
度を損うと共に、冷却ガスによる熱伝達効率も小さくな
るので、この問題を解決するためにはウェハの外周辺の
他にウェハサイズによって、例えば６″の場合は１周、
８″の場合は２周等、ウェハのセンタ寄りに吸着部を別
に設けることによって、この変形を防止することができ
る。On the basis of these facts, when compared with the above-mentioned known example, at first, at least the outer periphery of the wafer is adsorbed at the position to be contacted, but when the outer periphery of the wafer is supported and the back surface is filled with gas at a pressure of 10 Torr. Wafer deformation is 0.1 ~ 0.2
Deforms 5mm. Since this value impairs the etching processing accuracy of the wafer and reduces the heat transfer efficiency by the cooling gas, in order to solve this problem, depending on the wafer size in addition to the outer periphery of the wafer, for example, in the case of 6 ″, One lap,
In the case of 8 ″, this deformation can be prevented by separately providing a suction portion near the center of the wafer, such as two rounds.
【００２５】又、ウェハを他の部材と接触させると、必
ずその部分に異物が付着することは周知であり、この観
点から考えると静電吸着面は小さい方が良いことは明白
である。しかし乍ら、前述した如く、圧力制御レベル、
吸着力とを考え合せると、現状の技術レベルでは吸着面
積をウェハの全面積の約１/２以下とするのが妥当であ
る。何故なら、静電吸着力が40gf/cm2の時、８″ウェハ
で１/２吸着の時全吸着力は約6280gfであるのに対し、
冷却ガスに圧力15Torrによる剥離力は、約6190gfとなる
からである。It is well known that when a wafer is brought into contact with another member, foreign matter always adheres to that portion. From this viewpoint, it is apparent that a smaller electrostatic attraction surface is better. However, as described above, the pressure control level,
Taking the suction force into consideration, it is appropriate to set the suction area to about 1/2 or less of the entire area of the wafer at the current technical level. This is because when the electrostatic attraction force is 40 gf / cm 2 , the total attraction force is about 6280 gf at 1/2 ″ for 8 ″ wafer,
This is because the peeling force when the pressure of the cooling gas is 15 Torr is about 6190 gf.
【００２６】更に、載置台の裏側に貫通する穴の中にウ
ェハ搬送に供するプッシャを設けることにより、プッシ
ャ部で発生した異物をウェハとは反対側に運ぶためのキ
ャリヤガスとして余剰の冷却ガスが作用し、ウェハへの
異物付着を防止し、加えて、当該余剰の冷却ガスは、載
置台裏側のカバー内に導入され、カバー内圧力を処理室
圧力により高めて載置台裏側の機構部の汚染、生成物の
付着を抑制する。Further, by providing a pusher for carrying the wafer in a hole penetrating the back side of the mounting table, excess cooling gas as a carrier gas for carrying foreign matter generated in the pusher portion to the side opposite to the wafer can be obtained. In addition, the extra cooling gas is introduced into the cover on the back side of the mounting table, and the pressure inside the cover is increased by the processing chamber pressure to contaminate the mechanism on the back side of the mounting table. , To suppress the adhesion of products.
【００２７】[0027]
【実施例】本発明の第一の実施例を説明する。まず図１
に、基板１を支持部材２に係止するための静電吸着回路
を示す。基板１の処理として、マイクロ波プラズマエッ
チング装置を例にとり説明する。基板１が載置された基
板保持装置９が、エッチング室１０に設置されている。
エッチング室１０は、真空ポンプ１１により排気され、
ガス供給部からエッチングに必要なガスが供給される。
基板保持装置９には、高周波電源１２、直流電源１３が
接続されている。マイクロ波は、導波管１４を通って石
英窓１５からエッチング室１０に導入される。高周波電
源１２が動作あるいはマイクロ波が導入されると、エッ
チング室１０にプラズマ１７が発生する。このとき、直
流電源１３の電位により、基板保持装置９、基板１、プ
ラズマ１６を介して静電吸着回路１７が形成される。こ
の状態で基板１は基板保持装置９、すなわち図２の基板
支持部材２に生じさせる静電気力により係止される。DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described. First, Figure 1
2 shows an electrostatic attraction circuit for locking the substrate 1 to the support member 2. The processing of the substrate 1 will be described using a microwave plasma etching apparatus as an example. The substrate holding device 9 on which the substrate 1 is placed is installed in the etching chamber 10.
The etching chamber 10 is evacuated by a vacuum pump 11,
A gas necessary for etching is supplied from a gas supply unit.
A high frequency power supply 12 and a DC power supply 13 are connected to the substrate holding device 9. Microwaves are introduced into the etching chamber 10 from the quartz window 15 through the waveguide 14. When the high frequency power supply 12 operates or a microwave is introduced, a plasma 17 is generated in the etching chamber 10. At this time, an electrostatic suction circuit 17 is formed by the potential of the DC power supply 13 via the substrate holding device 9, the substrate 1, and the plasma 16. In this state, the substrate 1 is locked by the electrostatic force generated in the substrate holding device 9, that is, the substrate supporting member 2 in FIG.
【００２８】図２は、本発明の基板保持方法により基板
を保持するための基板保持装置９の断面を示したもので
ある。基板１が基板の支持部材２の凸部３に載せられ、
かつ支持部材２の凸部３は静電吸着回路（後述）に接続
されており、凸部３で基板１は支持部材２に係止され
る。支持部材２には、基板１を冷却するための冷媒４を
流す流路が設けられている。模式的に示した供給部５か
ら冷媒が供給され、排出部６から取り出され、支持部材
２の温度をコントロールする。また、支持部材２の中央
には冷却ガス７の流路が設けられており、冷却ガス７の
供給及び排気を行う。基板１の温度コントロールは、支
持部材２の凹部８に充填された冷却ガス７が温度コント
ロールされた支持部材２と基板１の熱伝導を担うことに
より達成される。静電吸着力は、支持部材２の表面に貼
付あるいは形成された誘電体１８によって発生される。FIG. 2 shows a cross section of a substrate holding device 9 for holding a substrate by the substrate holding method of the present invention. The substrate 1 is placed on the projection 3 of the support member 2 of the substrate,
In addition, the protrusion 3 of the support member 2 is connected to an electrostatic suction circuit (described later), and the substrate 1 is locked to the support member 2 by the protrusion 3. The support member 2 is provided with a flow path through which a coolant 4 for cooling the substrate 1 flows. A coolant is supplied from a supply unit 5 schematically shown, taken out from a discharge unit 6, and controls the temperature of the support member 2. Further, a flow path for the cooling gas 7 is provided at the center of the support member 2, and supplies and exhausts the cooling gas 7. The temperature control of the substrate 1 is achieved by the cooling gas 7 filled in the concave portion 8 of the support member 2 conducting heat conduction between the temperature-controlled support member 2 and the substrate 1. The electrostatic attraction force is generated by the dielectric 18 attached or formed on the surface of the support member 2.
【００２９】誘電体１８としては、例えば、酸化アルミ
ニウム、酸化アルミニウムにチタン酸化物を混合したも
のなどを使用することができる。また、静電気力を発生
させるための直流電圧としては、数１００ボルトを印加
する。このようにして、図２の支持部材２の凸部３に基
板が静電吸着される。静電吸着のための電位は、直流電
源１３により印加されたが、支持部材２において一様な
電位であり、凸部３においても同様で、基板１の外周部
は一様な電位となっている。そのため、基板１の面内に
て発生する電位差は、基板１に照射された電子やイオン
の分布に起因するものであり、基板１に損傷を与えるほ
どの高電位差は発生しない。それに対し、支持部材２の
中に、正負の電極を形成し、その電極で静電吸着する場
合は、基板１に高電位差が発生する可能性があり、基板
の損傷となる恐れがある。As the dielectric 18, for example, aluminum oxide, a mixture of aluminum oxide and titanium oxide can be used. In addition, several hundred volts are applied as a DC voltage for generating an electrostatic force. In this manner, the substrate is electrostatically attracted to the projection 3 of the support member 2 in FIG. Although the potential for electrostatic attraction was applied by the DC power supply 13, the potential is uniform at the support member 2, and the same is true at the convex portion 3, and the outer peripheral portion of the substrate 1 has a uniform potential. I have. Therefore, the potential difference generated in the plane of the substrate 1 is caused by the distribution of the electrons and ions applied to the substrate 1, and does not generate such a high potential difference as to damage the substrate 1. On the other hand, if positive and negative electrodes are formed in the support member 2 and electrostatically attracted by the electrodes, a high potential difference may be generated in the substrate 1 and the substrate may be damaged.
【００３０】さて、このようにして係止された基板１の
裏面に、冷却ガス７が供給される。冷却ガス７は、支持
部材２の凹部８に充填されるが、その圧力は、数トール
から数１０トールの範囲とする。また、凹部８のギャッ
プは、１５μｍから０．１ないし０．２ｍｍとすれば、
冷却効率の低下も無視できるほどとなる。すなわち、パ
ーティクルや表面荒さを考慮すると、少なくとも、１５
μｍのギャップが必要である。また、ガスの熱伝導率を
考慮すると、０．２ｍｍが上限である。The cooling gas 7 is supplied to the back surface of the substrate 1 locked in this way. The cooling gas 7 is filled in the concave portion 8 of the support member 2, and the pressure is in a range of several Torr to several tens Torr. Further, if the gap of the concave portion 8 is set to be 0.1 to 0.2 mm from 15 μm,
The decrease in cooling efficiency is also negligible. That is, considering particles and surface roughness, at least 15
A gap of μm is required. Further, considering the thermal conductivity of the gas, the upper limit is 0.2 mm.
【００３１】なお、静電吸着力は、ギャップが設けられ
た凹部８の間では、ほとんどゼロであり、凸部３におい
てのみ静電吸着力が発生しているとみなせる。しかし、
直流電源１３に電圧を適切に設定して、冷却ガス７の圧
力に十分耐えることのできる吸着力を設定することがで
きるので、冷却ガス７により基板１が動いたり飛ばされ
たりすることはない。The electrostatic attraction force is almost zero between the concave portions 8 provided with the gaps, and it can be considered that the electrostatic attraction force is generated only at the convex portions 3. But,
By appropriately setting the voltage of the DC power supply 13, it is possible to set an attraction force capable of sufficiently withstanding the pressure of the cooling gas 7, so that the cooling gas 7 does not move or fly the substrate 1.
【００３２】支持部材２は、冷媒４で冷却され温度コン
トロールされている。したがって、凹部３の支持部材面
で冷却された冷却ガス７は、直接あるいは何回か他の冷
却ガスに衝突しながら基板１に達する。基板１に達した
冷却ガスは、基板１からエネルギーを得、すなわち基板
１を冷却し、再び支持部材側に戻り、というサイクルを
繰り返しながら基板１を冷却する。冷却ガス７の圧力
が、凹部３のギャップに対応する平均自由行程を有する
圧力より十分高い場合は、上記のガス分子の挙動の他
に、ガス分子同士が衝突してエネルギーの授受を行いな
がら、基板１の熱エネルギーを支持部材２の冷却面に運
ぶ現象も多くなる。しかし、本発明の範囲における熱エ
ネルギーの輸送は、冷却ガス７を媒体とした熱伝導であ
る。たとえば、別に設けられた冷却部で冷却ガス７を予
め冷却して基板１の裏面に対流させ、そのガスの熱容量
によって基板を冷却するものではない。このような条件
が満たされる凹部３のギャップ、冷却ガス７の圧力とす
る。The support member 2 is cooled by a refrigerant 4 and temperature-controlled. Therefore, the cooling gas 7 cooled on the support member surface of the concave portion 3 reaches the substrate 1 directly or while colliding with another cooling gas several times. The cooling gas that has reached the substrate 1 obtains energy from the substrate 1, that is, cools the substrate 1 while repeating a cycle of cooling the substrate 1 and returning to the support member side again. When the pressure of the cooling gas 7 is sufficiently higher than the pressure having the mean free path corresponding to the gap of the concave portion 3, in addition to the above-described behavior of the gas molecules, the gas molecules collide with each other and transfer energy. The phenomenon of transferring the thermal energy of the substrate 1 to the cooling surface of the support member 2 also increases. However, the transport of thermal energy definitive the scope of the present invention is the heat conduction of the cooling gas 7 as a medium. For example, the cooling gas 7 is not cooled in advance by a cooling unit provided separately and convected on the back surface of the substrate 1, and the substrate is not cooled by the heat capacity of the gas. The gap of the concave portion 3 and the pressure of the cooling gas 7 satisfying such conditions are set.
【００３３】なお、冷却ガス７と支持部材３の間のエネ
ルギーの授受の割合は、熱適応係数と呼ばれる値で表さ
れる。この熱適応係数は、冷却ガスの種類、部材の表面
状態（汚染の状況など）に依存する。基板１と冷却ガス
７との間も同様である。冷却ガス７としては、漏れても
あまりエッチング特性に影響を及ぼさないことや、冷却
ガス７の給排気時間が他のガスより短くできることなど
から、ヘリウムが用いられる。しかし、そのほかに、窒
素、アルゴン、あるいはエッチングガスなど、冷却効率
は変わるが、特に限定されるべきものではない。The rate of energy transfer between the cooling gas 7 and the support member 3 is represented by a value called a heat adaptation coefficient. The heat adaptation coefficient depends on the type of the cooling gas and the surface condition of the member (such as the state of contamination). The same applies between the substrate 1 and the cooling gas 7. Helium is used as the cooling gas 7 because leakage does not significantly affect the etching characteristics, and the supply and exhaust time of the cooling gas 7 can be shorter than other gases. However, other than that, the cooling efficiency such as nitrogen, argon, or etching gas changes, but is not particularly limited.
【００３４】さて、冷却ガス７の仲介により、基板１は
十分に冷却されることとなった。さらに、基板１は、凸
部３のみで支持部材２と接している。基板裏面に他の部
材との接触により発生する異物がつく可能性があるの
は、この凸部３に対応する基板裏面のみとなる。また、
もしも、支持部材２が基板１より大きい面積を有し、図
２に示した基板１の外側にも面がある場合は、その外側
の面にプラズマが照射されてエッチングが起こること
や、基板１のエッチング反応生成物が付着することなど
のために、その面を介して異物が基板１の表側に付着す
ることになる。The substrate 1 has been sufficiently cooled by the intermediation of the cooling gas 7. Further, the substrate 1 is in contact with the support member 2 only by the convex portions 3. It is only the rear surface of the substrate corresponding to the projections 3 that foreign matter generated by contact with other members on the rear surface of the substrate may be attached. Also,
If the supporting member 2 has an area larger than the substrate 1 and there is a surface outside the substrate 1 shown in FIG. 2, the outer surface is irradiated with plasma and etching occurs. For example, the foreign matter adheres to the front side of the substrate 1 through the surface of the substrate 1 because the etching reaction product adheres to the surface of the substrate 1.
【００３５】その意味において、図２は、基板１より支
持部材２を小さくしたものである。しかし、本発明にお
ける裏面異物を低減するという効果は、基板１より支持
部材２が大きくても損なわれるものではない。In that sense, FIG. 2 shows the support member 2 smaller than the substrate 1. However, the effect of reducing foreign matter on the back surface in the present invention is not impaired even if the support member 2 is larger than the substrate 1.
【００３６】次に本発明の他の実施例を図３に示す。図
３の実施例も基本的には図１の例と同じであるが、基板
１の受渡しのためのプッシャー１９を設けたものであ
る。プッシャー１９の上下により、基板１は支持部材２
から受け渡される。プッシャー１９は、基板１の処理の
たび毎に上下しなければならない。すなわち、支持部材
２とは独立に動く必要がある。そのため、支持部材２と
プッシャー１９との間には隙間を設ける必要がある。こ
の隙間を通して冷却ガス７が漏れることになる。冷却ガ
ス７の漏れ量は、最少に抑える必要がある。それを可能
とするため、プッシャー１９の周囲に凸部３とほぼ同じ
か全く同じ高さの面の内周側凸部２０を設けた。この面
は、平坦で基板１と接触しているため、冷却ガス７の漏
れ量も許容量以内に抑えることができる。プッシャーを
中間部の凸部２０に設ける理由としては、次の３つがあ
る。Next, another embodiment of the present invention is shown in FIG. The embodiment of FIG. 3 is basically the same as the embodiment of FIG. 1, except that a pusher 19 for transferring the substrate 1 is provided. With the pusher 19 up and down, the substrate 1 is supported by the support member 2.
Passed from. The pusher 19 must be moved up and down each time the substrate 1 is processed. That is, it is necessary to move independently of the support member 2. Therefore, a gap needs to be provided between the support member 2 and the pusher 19. The cooling gas 7 leaks through this gap. The amount of leakage of the cooling gas 7 needs to be minimized. In order to make this possible, an inner peripheral side convex portion 20 having a surface substantially the same as or exactly the same height as the convex portion 3 is provided around the pusher 19. Since this surface is flat and is in contact with the substrate 1, the leakage amount of the cooling gas 7 can be suppressed to within an allowable amount. There are the following three reasons for providing a pusher on the convex part 20 of the intermediate part.
【００３７】（１）余剰ガスの排出処理のため （２）ガス流れによってプッシャー部での発生異物を排
出するため （３）異常放電を防止するため 異常放電は、ガス種、雰囲気圧力、電位のかかる隙間間
隔及び電位によって異なるが、例えば冷却ガス雰囲気内
にプッシャーを設けると、冷却ガス雰囲気圧力が８〜１
０Ｔｏｒｒ（ｍｍＨｇ）であり、静電吸着のための電圧
が４５０〜７００Ｖである場合、電位のかかる隙間間隔
を０．１６〜０．２ｍｍにする必要がある。しかしなが
ら、このような隙間を作るには作業上困難を伴う。本実
施例のごとくすると、プッシャー１９の設けられた雰囲
気を、エッチング室圧力３〜５ｍｍＴｏｒｒに対してコ
ンダクタンス分高い圧力、例えば、１０ｍｍＴｏｒｒ
（１／１０2ｍｍＨｇ）とし、隙間間隔を１ｍｍ程度明
けたとしても、プッシャー１９の設けられた雰囲気は、
放電が生じ易い圧力に比べ、かなり低く圧力にすること
ができ、異常放電の発生を防止することができる。(1) To discharge surplus gas (2) To discharge foreign matter generated in the pusher due to gas flow (3) To prevent abnormal discharge Abnormal discharge is caused by gas type, atmospheric pressure and potential. For example, if a pusher is provided in the cooling gas atmosphere, the pressure of the cooling gas atmosphere is 8 to 1 depending on the gap interval and the potential.
When the pressure is 0 Torr (mmHg) and the voltage for electrostatic attraction is 450 to 700 V, it is necessary to set the gap between potentials to 0.16 to 0.2 mm. However, creating such a gap involves operational difficulties. According to this embodiment, the atmosphere in which the pusher 19 is provided is set to a pressure higher than the etching chamber pressure by 3 to 5 mmTorr by conductance, for example, 10 mmTorr.
(1/10 2 mmHg), and even if the gap is about 1 mm, the atmosphere in which the pusher 19 is provided is
The pressure can be made considerably lower than the pressure at which discharge is likely to occur, and the occurrence of abnormal discharge can be prevented.
【００３８】図３を基板１を取り外した状態で基板保持
装置９を上から見たのが、図４の例である。支持部材２
の中央に冷却ガス７の給排気口２１が設けられ、その周
囲にプッシャー１９と内周側凸部２０が配置されてい
る。この内周側凸部２０は、基板１のたわみを受ける役
割も果たすことができる。FIG. 4 is an example of FIG. 4 in which the substrate holding device 9 is viewed from above with the substrate 1 removed. Support member 2
A supply / exhaust port 21 for the cooling gas 7 is provided at the center of the, and a pusher 19 and an inner peripheral side projection 20 are arranged around the supply / exhaust port 21. The inner peripheral side projection 20 can also serve to receive the deflection of the substrate 1.
【００３９】なお、図４では、内周側凸部２０を円形と
したが、この形状は特に限定するものではない。基板保
持装置９をリング状としたのが図５に示した実施例であ
る。リング状凸部２２内には、プッシャー１９の他に、
基板１の温度センサー２３、基板の有無を検出する基板
検出センサー２４、さらに基板１の電位をアース電位に
するためのアース端子２５が設けられている。なお、凹
部８への冷却ガス７の給排気を速やかに行うため、リン
グ状凸部２２の一部を切りかき、冷却ガス７が通り易く
なるようにしてある。In FIG. 4, the inner peripheral side projection 20 is circular, but the shape is not particularly limited. In the embodiment shown in FIG. 5, the substrate holding device 9 has a ring shape. In the ring-shaped convex portion 22, in addition to the pusher 19,
A temperature sensor 23 for the substrate 1, a substrate detection sensor 24 for detecting the presence or absence of the substrate, and an earth terminal 25 for setting the electric potential of the substrate 1 to the earth potential are provided. In order to quickly supply and exhaust the cooling gas 7 to and from the concave portion 8, a part of the ring-shaped convex portion 22 is cut off so that the cooling gas 7 can easily pass through.
【００４０】温度センサー２３は、プラズマ中で使用す
るような装置では、蛍光温度計とすれば雑音などの心配
が無い。また、基板検出センサー２４は、例えば光ファ
イバーを通してレーザー光を導入し、基板１の裏面に照
射する。その反射光の有無により基板１の有無を検出す
る。また、温度センサー２３の出力は、基板１の有無で
変動するため、その変化を基板１の有無の検出に用いる
ことも可能である。In the case where the temperature sensor 23 is used in a plasma, if it is a fluorescent thermometer, there is no fear of noise or the like. Further, the substrate detection sensor 24 introduces a laser beam through, for example, an optical fiber and irradiates the back surface of the substrate 1 with the laser beam. The presence or absence of the substrate 1 is detected based on the presence or absence of the reflected light. Further, since the output of the temperature sensor 23 varies depending on the presence or absence of the substrate 1, the change can be used for detecting the presence or absence of the substrate 1.
【００４１】アース端子２５は、静電吸着した基板１
を、プッシャー１９で持ち上げ受け渡す前に使用するも
のである。静電吸着で帯電した基板１に残留吸着力が存
在する間は、プッシャー１９を使用することはできな
い。そこで、その待ち時間を短縮するために、基板１を
アースに落としたい場合がある。アース端子２５を上下
して基板１に接触させることにより、基板１の電位をア
ースとする。アース端子２５は、導電性の材料とする
が、プラズマ処理中の異常放電を避けるため、抵抗率が
通常の金属などより大幅に大きい炭化シリコンなどを使
用することも有効である。また、この機能を、プッシャ
ー１９に兼用させることも可能である。The ground terminal 25 is connected to the substrate 1 that has been electrostatically attracted.
Is used before being lifted and delivered by the pusher 19. The pusher 19 cannot be used while the substrate 1 charged by electrostatic attraction has a residual attraction force. Therefore, in order to reduce the waiting time, there is a case where it is desired to drop the substrate 1 to the ground. By bringing the ground terminal 25 up and down to contact the substrate 1, the potential of the substrate 1 is set to the ground. Although the ground terminal 25 is made of a conductive material, it is also effective to use silicon carbide or the like whose resistivity is much larger than that of a normal metal or the like in order to avoid abnormal discharge during plasma processing. Also, this function can be shared by the pusher 19.
【００４２】図５は、各種センサーを同じ支持部材上に
配置したが、各々を単独に用いても本発明の主旨を損な
うものではない。In FIG. 5, various sensors are arranged on the same supporting member. However, the use of each of them alone does not impair the gist of the present invention.
【００４３】本発明の基板保持装置９を使用することに
より、基板１の裏面に付着する異物が少なくなる。ま
た、この基板処理装置により処理された基板１を使用す
ることにより、裏面異物が隣接する他の基板の表面に付
着したり、裏面から異物が溶けたり脱離したりすること
により、基板に汚染を生じさせたりすることが防止され
る。By using the substrate holding device 9 of the present invention, the amount of foreign substances adhering to the back surface of the substrate 1 is reduced. In addition, by using the substrate 1 processed by this substrate processing apparatus, foreign substances on the back surface adhere to the surface of another adjacent substrate, and foreign substances are dissolved or detached from the rear surface, thereby contaminating the substrate. Is prevented.
【００４４】次に本発明の他の実施例を図６に示す。図
６は基板保持装置９の断面を示し、ヘッド部６１の上面
には静電吸着のための絶縁膜が付着してあり、基板１と
接触・吸着する堰６２ａがウェハ外周部に設けられてお
り、それより内径部に堰６２ｂ，堰６２ｃがそれぞれ設
けてあり、堰６２ｃの中に載置台裏面に貫通する穴６６
が設けてある。ヘッド部６１の中部には冷媒を溜める空
間６４が設けてあり、冷媒の供給排出が可能な通路が設
けてある。ヘッド部６１の固着した軸６３が基板保持装
置９のほぼ中心に設けてあり、この中に冷却ガスを導入
するための導入路が設けてある。前述の穴６６に係合し
て、ウェハ搬送のためのプッシャー機構６５が設けてあ
る。載置台の裏側には貫通穴６６より外周部にカバー６
７が配置されている。Next, another embodiment of the present invention is shown in FIG. FIG. 6 shows a cross section of the substrate holding device 9. An insulating film for electrostatic attraction is attached to the upper surface of the head portion 61, and a weir 62 a for contacting / attracting with the substrate 1 is provided at the outer peripheral portion of the wafer. A weir 62b and a weir 62c are respectively provided in the inner diameter portion therefrom, and a hole 66 penetrating through the back surface of the mounting table in the weir 62c.
Is provided. A space 64 for storing the refrigerant is provided in the center of the head portion 61, and a passage through which the refrigerant can be supplied and discharged is provided. A shaft 63 to which the head portion 61 is fixed is provided substantially at the center of the substrate holding device 9, and an introduction path for introducing a cooling gas is provided therein. A pusher mechanism 65 for transferring a wafer is provided in engagement with the hole 66 described above. On the back side of the mounting table, a cover 6
7 are arranged.
【００４５】本発明は上記のように構成され、基板１
（ウェハ）を処理する場合は、真空の状態で搬送手段
（図示せず）より基板１を処理室へ導入し、予め冷媒に
よって温度制御された載置台９へ基板１を載置して、電
磁コイル４へ通電し、所定の磁場を形成して処理ガスを
導入し、マグネトロンへ通電し、マイクロ波を発生し
て、処理室内でＥＣＲ（電子サイクロトロン共鳴）によ
りガスをプラズマ化し、プラズマによってＤＣ回路を形
成して静電吸着力を発生させる。続いて基板１と載置台
９の間に冷却ガスを充填する。冷却ガスは、吸着してい
る接触部以外のギャップを素早く拡散し、プラズマから
基板１（ウェハ）に入る熱をヘッド部へ伝達し、冷媒と
熱交換を行わせる。冷却ガスは、ウェハの外周近傍まで
冷却効果を持たせるために、ウェハの外周部で処理室へ
漏出するが、それと同時に貫通穴６６へ積極的に漏出す
る寸法関係が与えられ、余剰ガスとして載置台裏側へ噴
出する。ウェハと載置台の間の冷却ガスは、所定の圧力
以上に保持する必要があり、漏出したガス量に相当する
ガスは常に供給している。The present invention is configured as described above,
When processing a (wafer), the substrate 1 is introduced into a processing chamber from a transfer means (not shown) in a vacuum state, and the substrate 1 is mounted on a mounting table 9 whose temperature is controlled in advance by a coolant, and the The coil 4 is energized, a predetermined magnetic field is formed, a processing gas is introduced, a magnetron is energized, a microwave is generated, and the gas is turned into plasma by ECR (Electron Cyclotron Resonance) in the processing chamber. To generate an electrostatic attraction force. Subsequently, a space between the substrate 1 and the mounting table 9 is filled with a cooling gas. The cooling gas quickly diffuses in gaps other than the adsorbed contact portion, transfers heat entering the substrate 1 (wafer) from the plasma to the head portion, and causes heat exchange with the refrigerant. The cooling gas leaks into the processing chamber at the outer periphery of the wafer in order to have a cooling effect to the vicinity of the outer periphery of the wafer. Spouts to the back of the table. The cooling gas between the wafer and the mounting table must be maintained at a predetermined pressure or higher, and a gas corresponding to the amount of leaked gas is constantly supplied.
【００４６】本発明によれば、冷却のために必要な冷却
ガスの圧力を確保しつつ、接触面積を低減して異物がウ
ェハ裏面へ転写する量を低減し、生産設備として再現性
の良い、ウェハ温度制御された状態でのプラズマ処理を
可能にし、歩溜りの良いプラズマ処理装置を得ることが
できる。According to the present invention, while ensuring the pressure of the cooling gas required for cooling, the contact area is reduced to reduce the amount of foreign matter transferred to the back surface of the wafer. The plasma processing can be performed in a state where the wafer temperature is controlled, and a plasma processing apparatus with a good yield can be obtained.
【００４７】更に、冷却ガスの余剰分を載置台の裏側
（ウェハの反対側）に噴出することによって、プッシャ
部で発生する異物をウェハと反対側へ運び出し、ウェハ
への異物付着を軽減し、加えて処理室内の載置台裏側に
設けたカバー内に当該ガスを噴出することにより、カバ
ー内の圧力を処理室の圧力より高く保ち、載置台の機構
部への反応生成物の付着を少なくして、経時変化の少な
いプラズマ処理装置を提供できるメリットがある。Further, by ejecting a surplus of the cooling gas to the back side of the mounting table (opposite side of the wafer), foreign matter generated in the pusher portion is carried out to the side opposite to the wafer, and foreign matter adhesion to the wafer is reduced. In addition, by ejecting the gas into the cover provided on the back side of the mounting table in the processing chamber, the pressure in the cover is kept higher than the pressure in the processing chamber, and the adhesion of reaction products to the mechanism of the mounting table is reduced. Therefore, there is an advantage that a plasma processing apparatus with little change over time can be provided.
【００４８】ここでいう冷却ガスは一般的にはヘリウム
ガスが用いられ、本発明では数ccm〜10ccm程度が処理室
内へ漏出することになるが、この量はプロセスガスの供
給量の100分の１〜数拾分の１で、プロセスに対して何
ら影響を与えないことは実験により確認済である。The cooling gas referred to here is generally helium gas. In the present invention, several ccm to 10 ccm leaks into the processing chamber, and this amount is 100/100 of the supply amount of the process gas. It has been confirmed by experiment that the influence on the process is not affected at all by one to several fractions.
【００４９】以上、本発明の実施例について述べた。な
お、本発明は、基板の冷却を念頭において説明したが、
基板を加熱する場合も支持部材を基板より高温に維持す
ることになるのみで、本質的に違いが無いのは言うまで
もない。The embodiments of the present invention have been described above. Although the present invention has been described with the cooling of the substrate in mind,
When the substrate is heated, the support member is maintained at a higher temperature than the substrate, and it goes without saying that there is essentially no difference.
【００５０】[0050]
【発明の効果】本発明によれば、基板の冷却を確実に実
施したうえで、基板裏面に付着する異物の量を低減する
ことができる。また、基板の係止を静電吸着で行ってい
るため、基板の表側で基板と接触するような基板係止治
具を使用する必要がなく、基板表側の異物低減も達成で
きる。また、基板表側における基板の処理が、基板係止
治具のために阻害されることがなく、基板全面で実施さ
れるという効果もある。これにより、裏面異物の低減に
よる基板処理の歩留り向上が図れる。また、基板表側の
異物も低減でき、さらなる歩留り向上と、基板一枚から
取れるデバイスチップ数の増加も図れるという効果があ
る。According to the present invention, the amount of foreign substances adhering to the back surface of the substrate can be reduced while cooling the substrate reliably. Further, since the substrate is locked by electrostatic attraction, there is no need to use a substrate locking jig that contacts the substrate on the front side of the substrate, and it is possible to achieve reduction of foreign substances on the front side of the substrate. Further, there is also an effect that the processing of the substrate on the front side of the substrate is not hindered by the substrate locking jig, and is performed on the entire surface of the substrate. As a result, the yield of substrate processing can be improved by reducing backside foreign matter. In addition, foreign substances on the front surface of the substrate can be reduced, and the yield can be further improved and the number of device chips that can be obtained from one substrate can be increased.
【００５１】さらに、従来の静電吸着電極に起因する基
板損傷も発生せず、この面からの歩留り向上が図れると
いう効果がある。[0051] Furthermore, substrate damage caused by conventional electrostatic chucking electrode does not occur, there is effect that <br/> and yield is improved Ru Hakare from this plane.
【図１】本発明の基板保持方法を適用した基板処理装置
の概要を示す縦断面図。FIG. 1 is a longitudinal sectional view showing an outline of a substrate processing apparatus to which a substrate holding method of the present invention is applied.
【図２】図１における基板保持装置の一実施例の縦断面
図。FIG. 2 is a longitudinal sectional view of one embodiment of the substrate holding device in FIG.
【図３】図１における基板保持装置の他の実施例の縦断
面図。FIG. 3 is a longitudinal sectional view of another embodiment of the substrate holding device in FIG.
【図４】図３の基板保持装置の一部を断面した上面図。FIG. 4 is a top view showing a cross section of a part of the substrate holding device of FIG. 3;
【図５】他の実施例の基板保持装置の一部を断面した上
面図。FIG. 5 is a cross-sectional top view of a part of a substrate holding device according to another embodiment.
【図６】本発明の基板保持装置の他の実施例の縦断面
図。FIG. 6 is a longitudinal sectional view of another embodiment of the substrate holding device of the present invention.
【図７】真空中の熱伝導特性を説明する図。FIG. 7 is a diagram illustrating heat conduction characteristics in a vacuum.
１…基板、２…支持部材、３…凸部、４…冷媒、５…供
給口、６…排出口、７…冷却ガス、８…凹部、９…基板
保持装置、１０…エッチィング室、１１…真空ポンプ、
１２…高周波電源、１３…直流電源、１４…導波管、１
５…石英窓、１６…プラズマ、１７…静電吸着回路、１
８…誘電体、１９…プッシャー、２０…内周側凸部、２
１…冷却ガス給排気口、２２…リング状凸部、２３…温
度センサー、２４…基板検出センサー、２５…アース端
子DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Support member, 3 ... Convex part, 4 ... Refrigerant, 5 ... Supply port, 6 ... Discharge port, 7 ... Cooling gas, 8 ... Depression, 9 ... Substrate holding device, 10 ... Etching chamber, 11 …Vacuum pump,
12: high frequency power supply, 13: DC power supply, 14: waveguide, 1
5 Quartz window, 16 Plasma, 17 Electrostatic suction circuit, 1
8: Dielectric, 19: Pusher, 20: Inner circumference convex part, 2
DESCRIPTION OF SYMBOLS 1 ... Cooling gas supply / exhaust port, 22 ... Ring-shaped convex part, 23 ... Temperature sensor, 24 ... Substrate detection sensor, 25 ... Ground terminal
フロントページの続き (56)参考文献 特開 昭62−193141（ＪＰ，Ａ) 特開 平５−47906（ＪＰ，Ａ) 特開 平４−3927（ＪＰ，Ａ) 特開 平２−212223（ＪＰ，Ａ) 特開 平３−102820（ＪＰ，Ａ) 特開 平２−67745（ＪＰ，Ａ) 特開 平４−304941（ＪＰ，Ａ) 特開 平３−169041（ＪＰ，Ａ) 特開 平４−51541（ＪＰ，Ａ) 特開 平５−217951（ＪＰ，Ａ) 実開 平２−120832（ＪＰ，Ｕ) 実開 平２−135140（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/68 H01L 21/203 H01L 21/205 H01L 21/3065 Continuation of the front page (56) References JP-A-62-193141 (JP, A) JP-A-5-47906 (JP, A) JP-A-4-3927 (JP, A) JP-A-2-212223 (JP) JP-A-3-102820 (JP, A) JP-A-2-67745 (JP, A) JP-A-4-304494 (JP, A) JP-A-3-16941 (JP, A) 4-51541 (JP, A) JP-A-5-217951 (JP, A) JP-A-2-120832 (JP, U) JP-A-2-135140 (JP, U) (58) Fields investigated (Int. (Cl. 7 , DB name) H01L 21/68 H01L 21/203 H01L 21/205 H01L 21/3065
Claims (6)
処理時に前記試料台と前記基板の間のガスを媒体として
該基板の温度を制御する基板保持装置において、 前記試料台の、基板外周部に対応する位置に表面が滑ら
かな環状の漏洩防止面を設け、さらに前記基板外周部に
対応する位置と該基板の中心に対応する位置の間に、該
基板との接触保持部を複数個設け、 前記環状の漏洩防止面及び接触保持部と前記基板の裏面
とを接触させて係止する静電吸着手段を設け、 前記接触保持部を貫通する穴を設け、該穴内に前記基板
の押し上げ用ピンを配置し、 前記静電吸着手段は、前記漏洩防止面及び接触保持部を
含む前記試料台の表面に貼付あるいは形成された誘電体
を含み、静電吸着力により前記漏洩防止面及び接触保持
部の表面を前記基板の裏面に接触させて該基板を係止す
ることを特徴とする基板保持装置。 1. A method for holding a substrate to be processed on a sample stage,
In a substrate holding device for controlling the temperature of the substrate using a gas between the sample stage and the substrate as a medium during processing, the sample stage has an annular leakage prevention surface having a smooth surface at a position corresponding to an outer peripheral portion of the substrate. A plurality of contact holding portions with the substrate are further provided between a position corresponding to the outer peripheral portion of the substrate and a position corresponding to the center of the substrate; An electrostatic attraction unit that contacts and locks the back surface, a hole that penetrates the contact holding unit is provided, and a pin for pushing up the substrate is arranged in the hole; and the electrostatic attraction unit prevents the leakage. A dielectric material attached or formed on the surface of the sample stage including a surface and a contact holding unit, and contacting the surface of the leakage prevention surface and the surface of the contact holding unit with the back surface of the substrate by electrostatic attraction, and A base characterized by locking Plate holding device.
処理時に前記試料台と前記基板の間のガスを媒体として
該基板の温度を制御する基板保持装置において、 前記試料台の、基板外周部に対応する位置に表面が滑ら
かな環状の漏洩防止面を設け、さらに前記基板外周部に
対応する位置と該基板の中心に対応する位置の間に、該
基板との接触保持部を複数個設け、 前記環状の漏洩防止面及び接触保持部と前記基板の裏面
とを接触させて係止する静電吸着手段を設け、 前記環状の漏洩防止面及び接触保持部の高さを、１５μ
m〜２００μmとし、 前記静電吸着手段は、前記漏洩防止面及び接触保持部を
含む前記試料台の表面に貼付あるいは形成された誘電体
を含み、静電吸着力により前記漏洩防止面及び接触保持
部の表面を前記基板の裏面に接触させて該基板を係止す
ることを特徴とする基板保持装置。 2. A method for holding a substrate to be processed on a sample stage,
In a substrate holding device for controlling the temperature of the substrate using a gas between the sample stage and the substrate as a medium during processing, the sample stage has an annular leakage prevention surface having a smooth surface at a position corresponding to an outer peripheral portion of the substrate. A plurality of contact holding portions with the substrate are further provided between a position corresponding to the outer peripheral portion of the substrate and a position corresponding to the center of the substrate; Electrostatic suction means for contacting and locking the back surface is provided, and the height of the annular leakage prevention surface and the contact holding portion is set to 15 μm.
m to 200 μm, wherein the electrostatic suction means includes a dielectric attached or formed on the surface of the sample stage including the leakage prevention surface and the contact holding portion, and the leakage prevention surface and the contact holding surface are formed by electrostatic suction force. A substrate holding device, wherein a front surface of a portion contacts a back surface of the substrate to lock the substrate.
被処理基板を載置する試料台を有する真空処理装置であ
って、前記試料台に前記基板を静電吸着によって係止
し、伝熱ガスを前記基板と前記試料台の間に導入して前
記基板の温度制御を行うものにおいて、 前記試料台の、基板外周部に対応する位置に表面が滑ら
かな環状凸部を設け、さらに前記基板外周部に対応する
位置と該基板の中心に対応する位置の間に、該基板との
接触保持部を複数個設け、 前記環状凸部及び接触保持部と前記基板の裏面とをそれ
ぞれ接触させて係止する静電吸着手段を設け、 前記接触保持部を貫通する穴を設け、該穴内に前記基板
の押し上げ用ピンを配置し、 前記試料台の前記接触保持部は、互いに離間して配置さ
れており、 前記静電吸着手段は、前記環状凸部及び接触保持部を含
む前記試料台の表面に貼付あるいは形成された誘電体を
含み、静電吸着力により前記環状凸部及び接触保持部の
表面を前記基板の裏面に接触させて該基板を係止するこ
とを特徴とする真空処理装置。 3. A vacuum processing apparatus having a vacuum processing chamber, a gas introducing means, and a sample table for mounting a substrate to be processed in the vacuum processing chamber, wherein the substrate is locked to the sample table by electrostatic attraction. In the method of controlling the temperature of the substrate by introducing the heat transfer gas between the substrate and the sample stage, an annular convex portion having a smooth surface is provided at a position corresponding to an outer peripheral portion of the substrate of the sample stage, A plurality of contact holding portions with the substrate are provided between a position corresponding to the outer peripheral portion of the substrate and a position corresponding to the center of the substrate, and the annular convex portion and the contact holding portion contact the back surface of the substrate, respectively. Providing an electrostatic attraction means for engaging and holding, providing a hole penetrating the contact holding portion, disposing a pin for pushing up the substrate in the hole, and separating the contact holding portion of the sample stand from each other. And the electrostatic suction means is provided with the ring The substrate includes a dielectric attached or formed on the surface of the sample stage including a convex portion and a contact holding portion, and the surface of the annular convex portion and the contact holding portion is brought into contact with the back surface of the substrate by electrostatic attraction. A vacuum processing apparatus characterized by locking.
被処理基板を載置する試料台を有する真空処理装置であ
って、前記試料台に前記基板を静電吸着によって係止
し、伝熱ガスを前記基板と前記試料台の間に導入して前
記基板の温度制御を行うものにおいて、 前記試料台の、基板外周部に対応する位置に表面が滑ら
かな環状凸部を設け、さらに前記基板外周部に対応する
位置と該基板の中心に対応する位置の間に、該基板との
接触保持部を複数個設け、 前記環状凸部及び接触保持部と前記基板の裏面とをそれ
ぞれ接触させて係止する静電吸着手段を設け、 前記前記環状凸部及び接触保持部の高さを、１５μm〜
２００μmとし、 前記試料台の前記接触保持部は、互いに離間し、該試料
台中心を中心として同心円状に配置されており、 前記静電吸着手段は、前記環状凸部及び接触保持部を含
む前記試料台の表面に貼付あるいは形成された誘電体を
含み、静電吸着力により前記環状凸部及び接触保持部の
表面を前記基板の裏面に接触させて該基板を係止するこ
とを特徴とする真空処理装置。 4. A vacuum processing apparatus having a vacuum processing chamber, a gas introducing means, and a sample table for mounting a substrate to be processed in the vacuum processing chamber, wherein the substrate is locked to the sample table by electrostatic suction. In the method of controlling the temperature of the substrate by introducing the heat transfer gas between the substrate and the sample stage, an annular convex portion having a smooth surface is provided at a position corresponding to an outer peripheral portion of the substrate of the sample stage, A plurality of contact holding portions with the substrate are provided between a position corresponding to the outer peripheral portion of the substrate and a position corresponding to the center of the substrate, and the annular convex portion and the contact holding portion contact the back surface of the substrate, respectively. An electrostatic chucking means is provided for engaging and locking, and the height of the annular convex portion and the contact holding portion is set to 15 μm or more.
200 μm, the contact holding portions of the sample stage are spaced apart from each other and are arranged concentrically around the center of the sample stage, and the electrostatic suction means includes the annular convex portion and the contact holding portion. Including a dielectric material stuck or formed on the surface of the sample stage, the surface of the annular convex portion and the contact holding portion is brought into contact with the back surface of the substrate by electrostatic attraction to lock the substrate. Vacuum processing equipment.
おいて、前記環状の漏洩防止面及び接触保持部の前記基
板との接触面積を、前記基板の面積の１／２以下とした
ことを特徴とする基板保持装置。 5. The substrate holding device according to claim 1, wherein a contact area of the annular leakage prevention surface and the contact holding portion with the substrate is set to not more than １ ／ of an area of the substrate. Characteristic substrate holding device.
おいて、前記環状凸部及び接触保持部の前記基板との接
触面積を、前記基板の面積の１／２以下としたことを特
徴とする真空処理装置。 6. The vacuum processing apparatus according to claim 3, wherein a contact area of the annular projection and the contact holding portion with the substrate is equal to or less than の of an area of the substrate. Vacuum processing equipment.
Priority Applications (30)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23018793A JP3265743B2 (en) | 1993-09-16 | 1993-09-16 | Substrate holding method and substrate holding device |
| TW083108049A TW277139B (en) | 1993-09-16 | 1994-09-01 | |
| DE69433903T DE69433903T2 (en) | 1993-09-16 | 1994-09-02 | Holding method and holding system for a substrate |
| EP99101718A EP0921559B1 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| EP01107801A EP1119023A3 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| DE69429318T DE69429318T2 (en) | 1993-09-16 | 1994-09-02 | Holding method and holding system for a substrate |
| EP94113803A EP0644578B1 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| KR1019940023529A KR100290700B1 (en) | 1993-09-16 | 1994-09-16 | Substrate holding system and substrate holding method |
| US08/307,238 US5792304A (en) | 1993-09-16 | 1994-09-16 | Method of holding substrate and substrate holding system |
| US08/670,180 US6048434A (en) | 1993-09-16 | 1996-06-20 | Substrate holding system including an electrostatic chuck |
| US08/904,623 US5961774A (en) | 1993-09-16 | 1997-08-01 | Method of holding substrate and substrate holding system |
| US09/050,417 US5906684A (en) | 1993-09-16 | 1998-03-31 | Method of holding substrate and substrate holding system |
| US09/109,033 US5985035A (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/108,835 US6221201B1 (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/109,178 US6336991B1 (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/478,992 US6217705B1 (en) | 1993-09-16 | 2000-01-07 | Method of holding substrate and substrate holding system |
| KR1020000058863A KR100325679B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| KR1020000058880A KR100287552B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system |
| KR1020000058882A KR100406692B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| KR1020000058873A KR100362995B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| US09/778,780 US6544379B2 (en) | 1993-09-16 | 2001-02-08 | Method of holding substrate and substrate holding system |
| US09/849,405 US6524428B2 (en) | 1993-09-16 | 2001-05-07 | Method of holding substrate and substrate holding system |
| KR1020010026680A KR100406716B1 (en) | 1993-09-16 | 2001-05-16 | Substrate holding apparatus and vacuum handling appratus and substrate holding apparatus for vacuum handling appratus |
| US10/024,723 US6645871B2 (en) | 1993-09-16 | 2001-12-21 | Method of holding substrate and substrate holding system |
| KR1020020013791A KR100345207B1 (en) | 1993-09-16 | 2002-03-14 | Substrate holding system and substrate holding method |
| US10/107,138 US6676805B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| US10/107,353 US6610171B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| US10/107,352 US6610170B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| KR1020030021112A KR100454863B1 (en) | 1993-09-16 | 2003-04-03 | Apparatus for vacuum handling and method thereof |
| US10/437,309 US6899789B2 (en) | 1993-09-16 | 2003-05-14 | Method of holding substrate and substrate holding system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23018793A JP3265743B2 (en) | 1993-09-16 | 1993-09-16 | Substrate holding method and substrate holding device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25824599A Division JP3264438B2 (en) | 1999-09-13 | 1999-09-13 | Vacuum processing device and vacuum processing method |
| JP2001315032A Division JP2002217180A (en) | 2001-10-12 | 2001-10-12 | Method of vacuum treatment of substrsate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0786382A JPH0786382A (en) | 1995-03-31 |
| JP3265743B2 true JP3265743B2 (en) | 2002-03-18 |
Family
ID=16903960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23018793A Expired - Lifetime JP3265743B2 (en) | 1993-09-16 | 1993-09-16 | Substrate holding method and substrate holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3265743B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9673078B2 (en) | 2014-06-04 | 2017-06-06 | Tokyo Electron Limited | Cooling processing apparatus and method for operating the same |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2325939B (en) | 1997-01-02 | 2001-12-19 | Cvc Products Inc | Thermally conductive chuck for vacuum processor |
| US6138745A (en) | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
| JP3492325B2 (en) | 2000-03-06 | 2004-02-03 | キヤノン株式会社 | Method of manufacturing image display device |
| DE10211312A1 (en) * | 2002-03-14 | 2003-10-02 | Wacker Siltronic Halbleitermat | Epitaxial coating applying method of semiconductor wafer in chemical vapor deposition reactor, involves exposing back surface of semiconductor wafer to ejection gas containing specific amount of hydrogen |
| US7033443B2 (en) * | 2003-03-28 | 2006-04-25 | Axcelis Technologies, Inc. | Gas-cooled clamp for RTP |
| JP4386753B2 (en) | 2004-02-19 | 2009-12-16 | キヤノンアネルバ株式会社 | Wafer stage and plasma processing apparatus |
-
1993
- 1993-09-16 JP JP23018793A patent/JP3265743B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9673078B2 (en) | 2014-06-04 | 2017-06-06 | Tokyo Electron Limited | Cooling processing apparatus and method for operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0786382A (en) | 1995-03-31 |
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