JPH0786319A - Die bonding equipment and die bonding method - Google Patents

Abstract

PURPOSE:To give means for properly correcting the amount of supply of brazing material depending on the amount of warpage and irregularity of a large-size bonding stage of a semiconductor package for a semiconductor producing equipment, particularly for the mechanism of die bonding equipment. CONSTITUTION:Means for detecting the warpage of a bonding stage 2 on a semiconductor package 1 and means for correcting the discharge of a brazing material for adhering a die 3 to bonding stage 2 depending upon the warpage are provided for a die bonding equipment, and the warpage of the bonding stage 2 of the semiconductor package 1 is detected and the discharge of a brazing material 4 for adhering the die 3 to the bonding stage 2 is corrected depending on the warpage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a mechanism of a die bonding apparatus and a die bonding method using the apparatus.

With the recent demand for large-scale computers, semiconductor devices are also becoming larger and more highly integrated, and accordingly, packages for mounting large IC chips are also becoming larger in size, and die-bonding devices corresponding thereto are available. Will be needed.

[0003]

2. Description of the Related Art FIG. 3 is an explanatory view of a conventional example. In the figure, 1 is a semiconductor package, 2 is a bonding stage, 3 is a die, 4 is a brazing material, and 5 is a lead.

Among the semiconductor manufacturing and assembling processes, in the dicing process of mounting the dice (IC chip) 3 on the ceramic semiconductor package 1, particularly, the semiconductor package 1 using the ceramic substrate corresponds to an increase in size of the dice 3 itself. Therefore, the size of the bonding stage 2 is also increasing.

As the bonding stage 2 becomes larger, the warp of the ceramic substrate of the semiconductor package 1 becomes more noticeable, as shown in FIG. The presence or absence of a gap between the bottom surface and the surface of the bonding stage 2 greatly affects the bonding strength.

[0006]

Generally, between the die bottom surface and the stage surface, for bonding the die to the bonding stage, gold (AU) pellets, silver (Ag) paste, solder (PbSn) paste, A wax material such as solder (PbSn) pellets is used.

Therefore, the above-mentioned warpage of the semiconductor package causes variations in the amount of these required wax materials, and when voids are generated or the amount of the wax material to be adhered is insufficient, the strength and heat conduction are insufficient. If the amount of the wax material is too large, the die may be inclined from the bonding stage and adhered to the die.

Therefore, conventionally, the upper limit standard of the warp amount of the bonding stage is set to be 30 μm or less, or another metal plate is attached to the bonding stage to flatten the bonding surface to the die. However, these are accompanied by the improvement of the precision of the members, and there is a drawback that the package becomes expensive.

In view of the above problems, it is an object of the present invention to provide a means for supplying an amount of brazing material appropriately corrected according to the unevenness or warpage of a large-sized bonding stage.

[0010]

FIG. 1 is a diagram for explaining the principle of the present invention. In the figure, 1 is a semiconductor package, 2 is a bonding stage, 3 is a die, and 4 is a wax material.

The above-mentioned problems of the present invention include providing a means for detecting the amount of warpage or unevenness of the surface of the bonding stage 2 of the semiconductor package 1, and further, the amount of warpage or unevenness of the bonding stage 2 is waxed. The problem can be solved by adding a means for controlling the discharge amount of the material 4 to be attached to the die.

That is, an object of the present invention is to provide a die bonding apparatus with means for detecting the warp amount of the die bonding stage 2 of the semiconductor package 1, and also to detect the warp amount of the bonding stage 2 of the semiconductor package 1. By providing a means for correcting the discharge amount of the brazing material 4 for bonding the die 3 to the bonding stage 2, the warp amount of the bonding stage 2 of the semiconductor package 1 is further detected, and the warp amount is detected by the detected warp amount. This is achieved by correcting the discharge amount of the wax material 4 that adheres the die 3.

[0013]

According to the present invention, firstly, heat conduction to the die becomes uniform and cracks in the die can be prevented.

Secondly, the brazing material is uniformly applied to the entire back surface of the die, and the bonding strength of the die to the bonding stage is stabilized. Third, it is possible to correct the application amount of the wax material suitable for the semiconductor package, and to secure the proper usage amount of the member.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is an explanatory view of an embodiment of the present invention. In the figure, 1 is a semiconductor package, 2 is a bonding stage, 3 is a die, 4 is a brazing material, 5 is a lead, 6 is a laser displacement meter, 7 is a normal nozzle, and 8 is a correction nozzle.

An embodiment of the present invention will be described with reference to FIG. As shown in FIG. 2A, as a function of detecting the warp amount of the bonding stage 2 of the semiconductor package 1, the laser displacement meter 6 is automatically fed in the XY directions, and the stage flatness is measured by the distance detection sensor. taking measurement.

Five measuring points are selected at the center and the peripheral portion of the bonding stage 2, the flatness of the bonding stage 2 is measured, and the amount of warpage or unevenness is detected. The measurement accuracy is 10 μm, and the allowable range is within ± 0.5 μm.

Next, as shown in FIG. 2B, the discharge amount of the solder material 4 is controlled with respect to the unevenness amount detected by the bonding stage 2. Discharging is performed by adjusting the pressure according to the diameter of the normal nozzle 7 used conventionally. For example, a normal nozzle 7 having a diameter of 0.5 to 1 mm per one time has a nitrogen pressure of 2 kg / cm.
The discharge amount of braze 4 3.5~5g ^2.

Subsequently, special ejection is added depending on the amount of warpage of the bonding stage 2, that is, the unevenness of the surface. For example, when the central portion of the bonding stage 2 is concave, one thick correction nozzle additionally discharges to the central portion, and when the central portion is convex, as shown in FIG. The additional correction nozzle 8 discharges the ink to the peripheral portion.

Specifically, a mechanism of a correction nozzle 8 having a different diameter from the first normal nozzle 7 is provided. Therefore, when the central portion is concave, a maximum of 2 units can be used, but when the central portion is convex, the position of the correction nozzle 8 is controlled by XY, and the ejection position is controlled. Further, the discharge amount is changed depending on the warp amount and the unevenness amount.

For example, if the concave is 0.1 mm, 5 mg of wax material is added.
In addition, data is input in advance by correlating with the discharge amount depending on the type of the wax material, and the proper discharge of the wax material 4 is automatically performed corresponding to the warp amount of the bonding stage 2 and the amount of irregularities.

Thereafter, as shown in FIG. 2 (d), the die 3 is bonded to the bonding stage 2 by the wax material 4 discharged by the means of the present invention, and the die attachment is completed.

[0023]

As described above, according to the present invention,
The heat conduction to the die becomes uniform, cracks in the die can be prevented, and the adhesive material is evenly applied to the entire surface of the die to stabilize the adhesive strength of the die to the bonding stage.

Further, the application amount of the adhesive material can be corrected according to the package, and the waste of members does not occur. Therefore, the present invention greatly contributes to the quality improvement and the high reliability assurance of the semiconductor device corresponding to the large scale integration.

[Brief description of drawings]

FIG. 1 is an explanatory view of the principle of the present invention.

FIG. 2 is an explanatory diagram of an embodiment of the present invention.

FIG. 3 is an explanatory diagram of a conventional example.

[Explanation of symbols]

 1 Semiconductor Package 2 Bonding Stage 3 Dice 4 Wax 5 Lead 6 Laser Displacement Meter 7 Normal Nozzle 8 Correction Nozzle

Claims (3)

[Claims] 1. A die bonding apparatus comprising means for detecting a warp amount of a bonding stage (2) of a semiconductor package (1). 2. A means for correcting a discharge amount of a wax material (4) for bonding a die (3) to the bonding stage (2) according to a warp amount of the bonding stage (2) of the semiconductor package (1). A die bonding apparatus having. 3. A wax material for detecting a warp amount of a bonding stage (2) of a semiconductor package (1) and adhering a die (3) to the bonding stage (2) according to the warp amount.
A die bonding method characterized in that the discharge amount in (4) is corrected.