JPH0786202A - Manufacture of superfine electrode, and electronic device - Google Patents

Abstract

PURPOSE:To manufacture a superfine structure of electrode by manufacturing a pattern by the method of removing one part of a protective film resistant to etching by ion beam or the like or the method of removing one part of the protective film by ion beams, using a resist film, and then, etching it with these protective films as resist films. CONSTITUTION:An objective superfine structure of electrode is gotten by sticking a metallic film 2 to the surface of a substrate 1, and changing it into a resist film 3 different from the first metallic film by the anode oxidation of the surface, and then, forming a resist pattern by converging ion beams, and removing one part of the anode oxide film, and then, performing wet etching or dry etching, with the anode film as a resist film.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrode having a fine structure and an electronic device using the method.

[0002]

2. Description of the Related Art Conventionally, as one method for producing a fine-structured electrode, a metal film is attached to the surface of a substrate, a resist is applied on the metal film, and the resist is exposed and developed using a photomask. After creating the desired pattern,
The target metal electrode is obtained by etching the metal film using the resist as a protective film. However, in this method, when the resist film cannot withstand the etching solution or the etching gas, or when the adhesion between the metal film and the resist is poor, the etching solution or the etching gas flows under the resist film which is the protective film, In some cases, the intended electrode structure cannot be obtained.

[0003]

SUMMARY OF THE INVENTION The present invention has been made to eliminate the conventional defects as described above, and provides a protective film having good adhesion to a metal film and strong against an etching solution or etching gas. The present invention relates to a method for obtaining an electrode film having an ultrafine structure.

[0004]

In order to solve the above-mentioned problems, a resist film is used as a primary layer in comparison with a conventional method for obtaining a finely structured electrode by etching a metal film using a resist film as a protective film. The protective film used as a protective film for the metal film 2 when etching the metal film 2 is a metal film that is not or difficult to be etched by this etching solution or etching gas, but is a chemically-modified film or the first metal film that is etched. This is a method of obtaining an electrode having a fine structure by etching by using a film such as the anodic oxide film of the metal film, and a method that solves the problem of adhesion between the resist and the substrate while expanding the degree of freedom in selecting the resist. Is. Further, an extremely fine electrode can be obtained by a method in which a resist film obtained by this method is uniformly formed on the surface of a metal film and then removed by an ion beam or the like.

[0005]

Embodiment 1 is a method for manufacturing an electrode having an ultrafine structure on an insulating substrate, a piezoelectric substrate, a substrate having a piezoelectric thin film, a semi-insulating substrate, or a semiconductor substrate. Anodize a part of the surface such as a thin film,
By using this oxide film as a resist film, a method for producing a target ultrafine electrode or the like, and by attaching a different metal film or the like to the surface of an electronic device or an electrode thin film obtained by using this production method, a different metal film is formed. Example 1 is a method for producing a target ultrafine electrode or the like by a method used as a resist film and an electronic device obtained by using this method. Example 2 is shown in FIG. 1, the first step of depositing the metal film 2 on the insulating substrate, the piezoelectric substrate, the substrate having the piezoelectric thin film, the semi-insulating substrate, or the semiconductor substrate 1, and the metal film as an anode. A second step of forming a film 3 different from the first metal film by oxidation or the like, and a part of the film 3 different in the second step by the focused ion beam 4 or electron beam 5 having a target pattern structure The third step of performing the first step and the first step of removing the first metal film by using an etching liquid or etching gas in which the metal film 2 in the first step is etched but the film 3 in the second step is not or is difficult to be etched The manufacturing method for obtaining the target electrode by the fourth step or the electronic device obtained by using this manufacturing method is the second embodiment. Example 3
Is the figure. 2, the first step of depositing the metal film 2 on the insulating substrate, the piezoelectric substrate, the substrate having the piezoelectric thin film, the semi-insulating substrate, or the semiconductor substrate 1, and the first metal film. The metal film 6 different from the first step from above
And a fifth step of removing the metal film 6 of the fifth step by the focused ion beam 4 or electron beam 5 having a desired pattern structure, and the metal film of the first step. 2 is etched, but the metal film 6 in the fifth step is not or is difficult to be etched Etching solution or etching gas is used to remove the first metal film 7th step to obtain a target electrode or An electronic device obtained by using this manufacturing method is the third embodiment. Example 4 is shown in FIG. 3, the first step of depositing a metal film on the insulating substrate, the piezoelectric substrate, the substrate having the piezoelectric thin film, the semi-insulating substrate, or the semiconductor substrate 1, and the metal of the first step. An eighth step of depositing a metal film 6 different from the first metal on the film 3 or the first metal film different from the metal film of the first step such as anodic oxidation, and the like. A ninth step of applying a resist or the like to form various desired patterns 7 by a light exposure method and the like, and irradiating a uniform ion beam 8 or electron beam 9 thereon A tenth step of removing the uncoated film 3 or the eighth metal film 6 of the eighth step, and removing the resist film to expose the metal film of the first step and the metal film of the eighth step. First to let
The first step and the twelfth step in which the metal film in the first step is etched but the metal film in the eighth step is not etched or is difficult to be etched are used to remove the first metal film. A manufacturing method for obtaining a target electrode by a step or an electronic device obtained by using this manufacturing method, or after the tenth step, the metal film in the first step is etched but the metal film in the eighth step is etched. After the step of removing the first metal film with an etching liquid or etching gas that is not or is not easily etched, a manufacturing method for obtaining a target electrode by removing the resist film, or an electronic device obtained by using this manufacturing method Is the fourth example. Example 5 is shown in FIG. As described in claim 4, in claim 4, the thirteenth step of depositing the metal film 2 thereon after the tenth step, and the metal film of the thirteenth step is further processed by anodic oxidation or the like. A fourteenth step of depositing a film 11 different from the metal film or the first metal film 12 on the first metal film in the step 13 and a uniform ion beam 13 or a diagonal oblique direction. By irradiating with the electron beam 14 or the like, the film 11 in the thirteenth and fourteenth steps of the portion not covered with the resist and the portion irradiated with the ion beam or the electron beam from an oblique direction,
Fifteenth step of removing 12 and after removing the resist film, the metal film 1 of the first and thirteenth steps is etched, but the films 11 and 12 are not or are less likely to be etched. The manufacturing method for obtaining the target electrode by the sixteenth step of removing the metal film in the first step and the metal film in the thirteenth step using Is. In the sixth embodiment, an ion beam or an electron beam is applied to the substrate surface as described in claims 4 or 5.
A manufacturing method for obtaining an electrode obtained by a method in which a film 3 or a metal film 6 having a different shade portion of a resist is not removed by being incident from an oblique direction, or an electronic device obtained by using this manufacturing method, It is the sixth example. The protective film used for etching after removing the resist of the present invention is included in this patent both when it is left as it is and when it is removed.
Further, the metal film 6 in the fifth step does not necessarily have to be a metal film, and may be a resist or a thin film other than the organic thin film, and these are also included in the present patent. The first aspect of the present invention
The method of etching the metal film 2 in the above step may be wet etching, dry etching, or another method, which is included in this patent.

[0006]

By using the method of the present invention, the resist film does not have to be a resist film having high etching resistance, and an electrode having a fine structure can be obtained with a very thin resist film. Moreover, since the adhesion between the protective film and the metal film is good, an electrode having a narrower width can be obtained.

[0007]

[Brief description of drawings]

FIG. 1 is a method of producing an electrode having a fine structure according to the present invention, in which a pattern suitable for a method of removing a focused ion beam or the like is formed on an anodized resist film and then a step of obtaining a fine electrode by etching is performed. It is sectional drawing which shows an example.

FIG. 2 is a diagram showing a process of manufacturing an electrode having a fine structure according to the present invention.
FIG. 11 is a cross-sectional view showing a step of using a metal film or the like as a resist protective film instead of the second step in the method using the chemical change of FIG. 1.

[FIG. 3] Of the steps for producing the microstructured electrode of the present invention,
It is sectional drawing which shows the process of obtaining a fine electrode by the method of removing a resist protective film from a protective film, such as an anodized film, using a uniform ion beam.

FIG. 4 is a cross-sectional view showing a step of a method for producing a fine electrode having an asymmetric structure by an ion beam or the like from an oblique direction, as a method for producing a fine structure electrode of the present invention.

[Explanation of symbols]

1 ... Substrate, 2 ... Metal film, 3 ... Anodizing resist film, 4 ...
Ion beam, 5 ... Electron beam, 6 ... Metal film, 7 ... Resist film, 8 ... Ion beam, 9 ... Electron beam, 10 ...
Metal film, 11 ... Anodizing resist film, 12 ... Metal film, 1
3 ... Oblique ion beam, 14 ... Oblique electron beam.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/306 21/3065

Claims (6)

[Claims] 1. A method for producing an electrode having an ultrafine structure on an insulating substrate, a piezoelectric substrate, a substrate having a piezoelectric thin film, a semi-insulating substrate, or a semiconductor substrate.
A method for producing a target ultrafine electrode by a method of anodizing a part of the surface of an electrode thin film or the like and using this oxide film as a resist film, and the surface of an electronic device or an electrode thin film obtained by using this method. A method of producing a target ultrafine electrode by a method of depositing a different metal film or the like on a substrate and using the different metal film as a resist film, and an electronic device obtained by using this method. 2. A first step of depositing a metal film 2 on an insulating substrate, a piezoelectric substrate, a substrate having a piezoelectric thin film, a semi-insulating substrate, or a semiconductor substrate 1, and the metal film is an anode. A second step of forming a film 3 different from the first metal film by oxidation or the like, and a part of the film 3 different in the second step by the focused ion beam 4 or electron beam 5 having a target pattern structure The third step of performing the first step and the first step of removing the first metal film by using an etching liquid or etching gas in which the metal film 2 in the first step is etched but the film 3 in the second step is not or is difficult to be etched A manufacturing method for obtaining a target electrode by the fourth step or an electronic device obtained by using this manufacturing method. 3. A step of depositing a metal film 2 on an insulating substrate, a piezoelectric substrate, a substrate having a piezoelectric thin film, a semi-insulating substrate, or a semiconductor substrate 1, and a step of depositing the first metal film. A fifth step of depositing a metal film 6 different from the first step from above, and a sixth step of removing the metal film 6 of the fifth step by the focused ion beam 4 or electron beam 5 having a target pattern structure. And the metal film 2 of the first step
Is etched but the metal film 6 in the fifth step is not or is difficult to be etched. A method for producing a target electrode by the seventh step of removing the first metal film by using an etching solution or etching gas An electronic device obtained by a manufacturing method. 4. A first step of depositing a metal film on an insulating substrate, a piezoelectric substrate, a substrate having a piezoelectric thin film, a semi-insulating substrate, or a semiconductor substrate 1, and a metal in the first step. An eighth step of depositing a metal film 6 different from the first metal on the film 3 or the first metal film different from the metal film of the first step such as anodic oxidation, and the like. A ninth step of applying a resist or the like to form various desired patterns 7 by a light exposure method and the like, and irradiating a uniform ion beam 8 or electron beam 9 thereon A tenth step of removing the film 3 or the eighth metal film 6 which is different from the eighth step and is not covered;
An eleventh step of removing the resist film to expose the metal film of the first step and the metal film of the eighth step, and the metal film of the first step is etched but the metal film of the eighth step is etched. A manufacturing method for obtaining a target electrode by a twelfth step of removing the first metal film by using an etching liquid or an etching gas that is not or hardly etched, or an electronic device obtained by using this manufacturing method, or a tenth step After that, the metal film of the first step is etched, but the metal film of the eighth step is not etched or is difficult to be etched.
After the step of removing the metal film, the manufacturing method for obtaining a target electrode by removing the resist film or an electronic device obtained by using this manufacturing method. 5. The method according to claim 4, wherein after the tenth step, a thirteenth step of depositing the metal film 2 thereon, and a step of subjecting the metal film of the thirteenth step to anodic oxidation or the like is performed. Thirteen
A metal film 12 different from the first metal film or a metal film 12 different from the first metal film is deposited on the first metal film 11
And the step of irradiating the ion beam 13 or the electron beam 14 uniformly from the oblique direction, the portions 13 and 14 of the portion not covered with the resist and the portion irradiated with the ion beam or the electron beam. A fifteenth step of removing the films 11 and 12 of the step, and a first step after removing the resist film
And the metal film 1 in the thirteenth step is etched.
A method for producing a target electrode by the sixteenth step of removing the metal film of the first step and the metal film of the thirteenth step by using an etching liquid or an etching gas in which the first and the second films are not or hardly etched Alternatively, an electronic device obtained by using this manufacturing method. 6. A film 3 having a different shaded portion of the resist by injecting an ion beam or an electron beam obliquely with respect to the substrate surface as in the fourth or fifth aspect of the invention. Alternatively, a manufacturing method for obtaining an electrode obtained by a method in which the metal film 6 is not removed, or an electronic device obtained by using this manufacturing method.