JPH0785821A - Cathode-ray tube - Google Patents
Cathode-ray tubeInfo
- Publication number
- JPH0785821A JPH0785821A JP23186693A JP23186693A JPH0785821A JP H0785821 A JPH0785821 A JP H0785821A JP 23186693 A JP23186693 A JP 23186693A JP 23186693 A JP23186693 A JP 23186693A JP H0785821 A JPH0785821 A JP H0785821A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- neck portion
- ray tube
- stem pin
- pins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ネック部の端面に管体
内の電子銃と連結される複数のステムピンが植立されて
成る陰極線管に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cathode ray tube in which a plurality of stem pins connected to an electron gun in a tube are erected on an end surface of a neck portion.
【0002】[0002]
【従来の技術】図7に従来の陰極線管のユニポテンシャ
ル型電子銃を示す。Kはカソード、G1〜G5はグリッ
ドを示す。こられ電極に印加される電圧の例を述べる。
グリッドG3、G5には30kV、グリッドG4には1
3kV、グリッドG2には200V、G1には0Vの電
圧が印加される。グリッドG3、G4、G5にて主レン
ズが構成されるが、解像度を高めるために、グリッドG
4に印加する電圧を高くする傾向にある。2. Description of the Related Art FIG. 7 shows a conventional unipotential electron gun of a cathode ray tube. K indicates a cathode and G1 to G5 indicate grids. An example of the voltage applied to these electrodes will be described.
30kV for grids G3 and G5, 1 for grid G4
A voltage of 3 kV, a voltage of 200 V is applied to the grid G2, and a voltage of 0 V is applied to G1. The main lens is composed of the grids G3, G4, and G5, but in order to improve the resolution, the grid G
4 tends to increase the voltage applied.
【0003】[0003]
【発明が解決しようとする課題】グリッドG3、G5に
は、陰極線管のコーン部に設けたアノードキャップから
高圧が印加されるが、他の電極はネック部の端面に植立
されたステムピンから印加される。そこで、高圧の印加
されるグリッドG4と、低圧の印加されるグリッドG
1、G2との間の放電が問題と成る。High voltage is applied to the grids G3 and G5 from the anode cap provided in the cone portion of the cathode ray tube, but the other electrodes are applied from the stem pin erected on the end face of the neck portion. To be done. Therefore, the grid G4 to which high voltage is applied and the grid G to which low voltage is applied
Discharge between 1 and G2 becomes a problem.
【0004】陰極線管の管体は通常ガラスから成ってお
り、この管体は外気圧に十分耐え得る強度の確保と、加
工時の歪みを考慮して、均等肉厚と成るようにするため
に、その表面は平坦と成っており、ネック部の端面も例
外ではない。The tube body of the cathode ray tube is usually made of glass, and this tube body has a uniform thickness in order to secure a strength sufficient to withstand the external atmospheric pressure and to take into consideration the distortion during processing. , Its surface is flat, and the end face of the neck is no exception.
【0005】ネック部の端面に植立されたステムピン間
の耐圧は、その端面が平坦な場合1mmに付き約1kV
と言われており、これを越えるとステムピン間に放電が
生じる。ステムピン間の耐圧を上昇させるために、その
ネック部の端面にシリコン樹脂層(シリコンゴム)を被
着し、更にその上にステムベースを被着することが行わ
れているが、そのシリコン樹脂層に気泡がある場合に
は、ネック部の端面上におけるステムピン間の耐圧の十
分な上昇は期待し難い。The withstand voltage between the stem pins planted on the end face of the neck portion is about 1 kV per 1 mm when the end face is flat.
It is said that if this is exceeded, discharge will occur between the stem pins. In order to increase the pressure resistance between the stem pins, a silicon resin layer (silicon rubber) is adhered to the end surface of the neck portion, and a stem base is further adhered on the silicon resin layer. If there are air bubbles in it, it is difficult to expect a sufficient increase in the pressure resistance between the stem pins on the end face of the neck portion.
【0006】かかる点に鑑み、本発明は、ステムピン間
のネック部の端面上付近の耐圧の上昇を可能にした陰極
線管を提案しようとするものである。In view of the above point, the present invention intends to propose a cathode ray tube capable of increasing the withstand voltage near the end face of the neck portion between the stem pins.
【0007】[0007]
【課題を解決するための手段】本発明は、ネック部の端
面4に管体内の電子銃と連結される複数のステムピン5
が植立されて成る陰極線管おいて、高圧の印加されるス
テムピン5(G4)及びこれに近接する低圧の印加され
るステムピン5(G1)、(G2)の間のネック部の端
面4上に凸部4bを設けると共に、高圧の印加されるス
テムピン5(G4)の周囲のネック部の端面上に凸部4
aを設けて、ネック部の端面4の両ステムピン5(G
4)及び5(G1)、(G2)の間の沿面距離を長くす
るようにしたものである。SUMMARY OF THE INVENTION According to the present invention, a plurality of stem pins 5 connected to an electron gun in a tube are attached to an end surface 4 of a neck portion.
In the cathode ray tube in which the high pressure is applied, on the end face 4 of the neck portion between the high pressure applied stem pin 5 (G4) and the low pressure applied stem pins 5 (G1), (G2). The convex portion 4b is provided, and the convex portion 4 is provided on the end face of the neck portion around the stem pin 5 (G4) to which a high voltage is applied.
a is provided, and both stem pins 5 (G
The creepage distance between 4) and 5 (G1) and (G2) is increased.
【0008】[0008]
【作用】かかる本発明によれば、ネック部の端面4の高
圧の印加されるステムピン(G4)及びこれに近接する
低圧の印加されるステムピン5(G1)、(G2)の間
の沿面距離が、ネック部の端面4が平坦な場合に比べて
長く成り、両ステムピン5(G4)及び5(G1)、
(G2)の間の耐圧が上昇する。According to the present invention, the creeping distance between the stem pin (G4) to which a high pressure is applied on the end face 4 of the neck portion and the stem pins 5 (G1) and (G2) adjacent to which the low pressure is applied is reduced. , It becomes longer than the case where the end surface 4 of the neck portion is flat, and both stem pins 5 (G4) and 5 (G1),
The breakdown voltage during (G2) increases.
【0009】[0009]
【実施例】以下に、図面を参照して、本発明の実施例を
詳細に説明する。先ず、図2及び図3にそれぞれ示す陰
極線管(1)のネック部の背面図及び側面図を参照し
て、本発明が適用される陰極線管(1)のネック部1を
説明する。ネック部1内には図7に図示した電子銃Gが
収納されている。Embodiments of the present invention will now be described in detail with reference to the drawings. First, the neck portion 1 of the cathode ray tube (1) to which the present invention is applied will be described with reference to the rear and side views of the neck portion of the cathode ray tube (1) shown in FIGS. 2 and 3, respectively. The electron gun G shown in FIG. 7 is housed in the neck portion 1.
【0010】ネック部の端面4に多数のステムピン5が
植立されて、ネック部1内の電子銃1のグリッドG3、
G5を除く各電極、即ち、グリッドG1、G2、G5、
カソードK、ヒータ等に接続されている。5(G4)は
グリッドG4に接続されるステムピン、5(G1)、5
(G2)はそれぞれグリッドG1、G2に接続されるス
テムピンである。ステムピン5(G4)と、ステムピン
5(G1)、5(G2)との間の距離は、ここでは7m
mである。上述から明らかなように、ステムピン5(G
4)には13kVの電圧が印加され、ステムピン5(G
1)、5(G2)にはそれぞれ0V、200Vの電圧が
印加される。チップ管6はネック部1に連通する如くネ
ック部の端面4の中央に突出し、最終的にはその端部が
封止される。A large number of stem pins 5 are erected on the end face 4 of the neck portion, and the grid G3 of the electron gun 1 in the neck portion 1 is
Each electrode except G5, that is, the grids G1, G2, G5,
It is connected to the cathode K, a heater and the like. 5 (G4) is a stem pin connected to the grid G4, 5 (G1), 5
(G2) are stem pins connected to the grids G1 and G2, respectively. The distance between the stem pin 5 (G4) and the stem pins 5 (G1) and 5 (G2) is 7 m here.
m. As is clear from the above, the stem pin 5 (G
A voltage of 13 kV is applied to 4) and the stem pin 5 (G
Voltages of 0 V and 200 V are applied to 1) and 5 (G2), respectively. The tip tube 6 projects to the center of the end face 4 of the neck portion so as to communicate with the neck portion 1, and finally the end portion is sealed.
【0011】ネック部の端面4の上にはシリコン樹脂層
(シリコンゴム)2が接着され、その上にポリカーボネ
ートから成る円板状のステムベース3が接着される。
尚、ステムピン5は図示を省略したソケットに嵌挿され
る。A silicon resin layer (silicon rubber) 2 is adhered on the end face 4 of the neck portion, and a disc-shaped stem base 3 made of polycarbonate is adhered thereon.
The stem pin 5 is fitted in a socket (not shown).
【0012】次に、図1を参照して、ネック部の端面4
の形状を説明する。図1の2、3、4は図2、図3で前
述したシリコン樹脂(シリコンゴム)層、ステムベー
ス、ネック部の端面である。高圧の印加されるステムピ
ン5(G4)及びこれに近接する低圧の印加されるステ
ムピン5(G1)、(G2)の間のネック部の端面4上
に凸部4bを設けると共に、高圧の印加されるステムピ
ン5(G4)及び低圧の印加されるステムピン5(G
1)、5(G2)の周囲のネック部の端面上にそれぞれ
凸部4aを設けて、ネック部の端面4の両ステムピン5
(G4)及び5(G1)、(G2)の間の沿面距離を長
く成るようにする。凸部(4b)は図2に示すように、
ステムピン5(G4)と、ステムピン5(G1)、5
(G2)とを結ぶ直線に対し略直交する方向に長い細長
形状(3mm×2mm)を有している。凸部4aは図2
に示す如く円環状である。凸部4a、4bの高さはそれ
ぞれ0.7mmである。Next, referring to FIG. 1, the end surface 4 of the neck portion
The shape of will be described. Reference numerals 2, 3, and 4 in FIG. 1 denote the end faces of the silicone resin (silicon rubber) layer, the stem base, and the neck portion described above with reference to FIGS. A convex portion 4b is provided on the end face 4 of the neck portion between the stem pin 5 (G4) to which a high voltage is applied and the stem pins 5 (G1) and (G2) adjacent to which a high voltage is applied, and the high voltage is applied. Stem pin 5 (G4) and stem pin 5 (G
1) Protruding portions 4a are provided on the end surfaces of the neck portion around 5 (G2), and both stem pins 5 of the end surface 4 of the neck portion are provided.
The creepage distance between (G4) and 5 (G1), (G2) is made long. The convex portion (4b) is, as shown in FIG.
Stem pin 5 (G4) and stem pin 5 (G1), 5
It has an elongated shape (3 mm × 2 mm) long in a direction substantially orthogonal to a straight line connecting (G2). The convex portion 4a is shown in FIG.
It has an annular shape as shown in. The height of each of the protrusions 4a and 4b is 0.7 mm.
【0013】次に、本発明を適用し得る他の陰極線管
(2)を、図4、図5を参照して説明するも、図4、図
5において、図2、図3と対応する部分には、同一符号
を付して重複説明を省略する。この陰極線管では、ステ
ムベース3に一体に、ステムピン5(G4)と、5(G
1)、5(G2)との間を隔絶する隔壁7を設け場合で
ある。7fはチップ管6の周囲に接するスリーブ部、7
a、7b、7c、7dは輻方向に延在する隔壁、7eは
円弧状の隔壁で、それぞれステムペース3上に突出して
いる。ステムピン5(G4)はスリーブ部7fの一部、
隔壁7b、7c、7eによって取り囲まれる。ステムピ
ン5(G1)はスリーブ部7fの一部、隔壁7a、7b
によって取り囲まれる。ステムピン5(G2)はスリー
ブ部7fの一部、隔壁7c、7dによって取り囲まれ
る。従って、ステムピン5(G4)と、ステムピン5
(G1)、5(G2)との間のステムベース3の上面以
上の部分の耐圧は十分高く成る。Next, another cathode ray tube (2) to which the present invention can be applied will be described with reference to FIGS. 4 and 5, but in FIGS. 4 and 5, a portion corresponding to FIGS. Are denoted by the same reference numerals and redundant description will be omitted. In this cathode ray tube, the stem pin 5 (G4) and 5 (G
1) In the case of providing the partition wall 7 that isolates it from 5 (G2). 7f is a sleeve portion that contacts the periphery of the tip tube 6,
Reference numerals a, 7b, 7c and 7d denote partition walls extending in the radial direction, and reference numeral 7e denotes an arc-shaped partition wall which projects above the stem pace 3. The stem pin 5 (G4) is a part of the sleeve portion 7f,
It is surrounded by partitions 7b, 7c, 7e. The stem pin 5 (G1) is a part of the sleeve portion 7f and the partition walls 7a and 7b.
Surrounded by. The stem pin 5 (G2) is surrounded by a part of the sleeve portion 7f and the partition walls 7c and 7d. Therefore, the stem pin 5 (G4) and the stem pin 5
The breakdown voltage of the portion above the upper surface of the stem base 3 between (G1) and 5 (G2) is sufficiently high.
【0014】この図3、図4の陰極線管(2)の場合
も、ネック部の端面4上の形状は図1で説明したのと同
様である。In the case of the cathode ray tube (2) shown in FIGS. 3 and 4, the shape of the end face 4 of the neck portion is the same as that described with reference to FIG.
【0015】図6に示すように、図1で説明したステム
ピン5(G4)及び5(G1)間{図示を省略するも、
ステムピン5(G4)及び5(G2)間も同様}の凸部
4bは、これらピン間に並置された全体として断面が波
型と成る複数、ここでは3つの凸部にて構成しても良
い。このようにすれば、ピン間の沿面間距離は一層長く
成る。As shown in FIG. 6, between the stem pins 5 (G4) and 5 (G1) described in FIG. 1 (although not shown,
The same applies to the stem pins 5 (G4) and 5 (G2)}, and the protrusions 4b arranged side by side between the pins may have a plurality of wavy cross-sections, here three protrusions. . By doing so, the creepage distance between the pins is further increased.
【0016】尚、凸部4a、4bの形状の上述の実施例
のものに限らず任意である。Incidentally, the shapes of the convex portions 4a and 4b are not limited to those in the above-mentioned embodiment, but may be arbitrary.
【0017】[0017]
【発明の効果】上述せる本発明によれば、ステムピン間
のネック部の端面上付近の耐圧の上昇を可能にした陰極
線管を得ることができる。According to the present invention described above, it is possible to obtain a cathode ray tube capable of increasing the withstand voltage near the end face of the neck portion between the stem pins.
【図1】本発明の実施例を示す断面図FIG. 1 is a sectional view showing an embodiment of the present invention.
【図2】本発明を適用した陰極線管(1)のネック部の
背面図FIG. 2 is a rear view of the neck portion of the cathode ray tube (1) to which the present invention is applied.
【図3】本発明を適用した陰極線管(1)のネック部の
側面図FIG. 3 is a side view of a neck portion of a cathode ray tube (1) to which the present invention is applied.
【図4】本発明を適用した陰極線管(2)のネック部の
背面図FIG. 4 is a rear view of the neck portion of the cathode ray tube (2) to which the present invention is applied.
【図5】本発明を適用した陰極線管(2)のネック部の
側面図FIG. 5 is a side view of a neck portion of a cathode ray tube (2) to which the present invention is applied.
【図6】本発明の他の実施例を示す断面図FIG. 6 is a sectional view showing another embodiment of the present invention.
【図7】陰極線管の電子銃の一例を示す配置図FIG. 7 is a layout drawing showing an example of an electron gun of a cathode ray tube.
1 ネック部 2 シリコン樹脂層 3 ステムベース 4 ネック部の端面 4a 凸部 4b 凸部 5 ステムピン 6 チップ管 7 隔壁 1 Neck Part 2 Silicone Resin Layer 3 Stem Base 4 End Surface of Neck Part 4a Convex Part 4b Convex Part 5 Stem Pin 6 Chip Tube 7 Partition
Claims (2)
される複数のステムピンが植立されて成る陰極線管おい
て、 高圧の印加されるステムピン及びこれに近接する低圧の
印加されるステムピンの間の上記ネック部の端面上に凸
部を設けると共に、上記高圧の印加されるステムピンの
周囲の上記ネック部の端面上に凸部を設けて、上記ネッ
ク部の端面の上記両ステムピンの間の沿面距離を長くす
るようにしたことを特徴とする陰極線管。1. A cathode ray tube comprising a plurality of stem pins connected to an electron gun in a tube, which are erected on an end face of a neck portion, wherein a stem pin to which a high voltage is applied and a stem pin to which a low voltage is applied are adjacent to the stem pin. Between the two stem pins on the end surface of the neck portion, a convex portion is provided on the end surface of the neck portion between, and a convex portion is provided on the end surface of the neck portion around the stem pin to which the high pressure is applied. A cathode ray tube characterized in that the creepage distance of is increased.
れに近接する低圧の印加されるステムピンの間の上記ネ
ック部の端面上の凸部を、上記両ステムピン間に並置さ
れた複数の凸部にて構成したことを特徴とする請求項1
記載の陰極線管。2. The convex portion on the end face of the neck portion between the stem pin to which the high voltage is applied and the stem pin to which a low pressure is applied in the vicinity of the stem pin is formed into a plurality of convex portions juxtaposed between the both stem pins. It is configured as follows.
The described cathode ray tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23186693A JPH0785821A (en) | 1993-09-17 | 1993-09-17 | Cathode-ray tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23186693A JPH0785821A (en) | 1993-09-17 | 1993-09-17 | Cathode-ray tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0785821A true JPH0785821A (en) | 1995-03-31 |
Family
ID=16930252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23186693A Pending JPH0785821A (en) | 1993-09-17 | 1993-09-17 | Cathode-ray tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0785821A (en) |
-
1993
- 1993-09-17 JP JP23186693A patent/JPH0785821A/en active Pending
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