JPH0785419A - Thin film head - Google Patents

Thin film head

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Publication number
JPH0785419A
JPH0785419A JP22765293A JP22765293A JPH0785419A JP H0785419 A JPH0785419 A JP H0785419A JP 22765293 A JP22765293 A JP 22765293A JP 22765293 A JP22765293 A JP 22765293A JP H0785419 A JPH0785419 A JP H0785419A
Authority
JP
Japan
Prior art keywords
thin film
magnetostriction
film head
recording
upper core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22765293A
Other languages
Japanese (ja)
Inventor
Kyoji Noda
恭司 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP22765293A priority Critical patent/JPH0785419A/en
Publication of JPH0785419A publication Critical patent/JPH0785419A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To achieve recording/reproducing characteristics with a higher density than in the prior art by improving the initial permeability mu which is a magnetostatic characteristic of a thin film head used in a hard disk drive capable of performing high-density recording. CONSTITUTION:Magnetostriction lambda of an upper core of this thin film head is set to be -2.0X10<-6> to -1.0X10<-6>. Compression stress due to the shrinkage of an insulating resist film is made to be applied to the upper core, so that the initial permeability mu becomes 3700-4000. As compared with a conventional thin film head, this thin film head has a larger initial permeability mu and therefore a larger inductance L. Since the frequency characteristics of recording/ reproducing are improved, the thin film head enables recording/reproduction of data with a higher density than in the prior art. Accordingly, a hard disk drive with a higher recording density than that of a conventional one is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、超高密度記録が可能な
ハードディスクドライブ装置に使用される薄膜ヘッドに
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film head used in a hard disk drive device capable of ultra high density recording.

【0002】[0002]

【従来の技術】近年、磁気記憶装置であるハードディス
クドライブ装置の高記録密度化に伴い、その記録再生に
使用される磁気ヘッドとして薄膜ヘッド(インダクティ
ブヘッド)が実用化されるようになった。
2. Description of the Related Art In recent years, with the increase in recording density of hard disk drive devices, which are magnetic storage devices, thin film heads (inductive heads) have come into practical use as magnetic heads used for recording and reproduction.

【0003】ここで、薄膜ヘッドの構造を説明する。薄
膜ヘッドの構造は、ヘッドとディスクが対面する面(A
BS面)からみて、一般に図1に示すようにスライダー
となるアルチック基板1の上に絶縁膜(アルミナ膜)2
が形成され、その上に下部コア(FeNi膜、パーマロ
イメッキ膜)3、READ/WRITEギャップ絶縁膜
(アルミナ膜)4、上部コア(FeNi膜、パーマロイ
メッキ膜)5、保護用絶縁膜(アルミナ膜)6が形成さ
れている。
The structure of the thin film head will be described below. The structure of the thin film head is the surface (A
As shown in FIG. 1, when viewed from the BS surface), an insulating film (alumina film) 2 is formed on the AlTiC substrate 1 that serves as a slider.
Is formed, and the lower core (FeNi film, permalloy plating film) 3, READ / WRITE gap insulating film (alumina film) 4, upper core (FeNi film, permalloy plating film) 5, protective insulating film (alumina film) ) 6 is formed.

【0004】また、薄膜ヘッドをABS面に対して垂直
方向からみた断面を示すと、図2に示すように下部コア
3と上部コア5の間にREAD/WRITE用のコイル
7が絶縁レジスト膜8を介して介在されている。
A cross section of the thin film head as viewed in a direction perpendicular to the ABS surface shows a READ / WRITE coil 7 between the lower core 3 and the upper core 5 as shown in FIG. Intervened through.

【0005】薄膜ヘッドの下部コア3および上部コア5
は一般的に外部応力によって磁気特性が変化することを
さけるために、磁歪λが零近傍(たとえば、−0.6×
10 -6〜+0.6×10-6)であるFeNi組成比を選
択してメッキ成膜することが望ましいと言われている。
しかし、磁歪が正(たとえば0.0×10-6〜+0.6
×10-6)になると図6(a)、すなわち下部コアの磁
歪λを正にしたときの磁区構造を示す図のようにコアパ
ターン内に縦割れ磁壁(イ)が発生して、記録再生特性
が劣化するため、実際には磁歪が若干負であるFeNi
組成比に設定することが望ましいので、磁歪λ=0.0
×10-6〜−0.6×10-6となるFeNi組成比にて
メッキ成膜を行っているのが一般的である。なお、図6
(b)は下部コアの磁歪λを負にしたときの磁区構造を
示している。
Lower core 3 and upper core 5 of the thin film head
Generally indicates that the magnetic properties change due to external stress.
In order to avoid, magnetostriction λ is near zero (for example, −0.6 ×
10 -6~ + 0.6 × 10-6) FeNi composition ratio
It is said that it is desirable to select and form a film by plating.
However, the magnetostriction is positive (for example, 0.0 × 10-6~ +0.6
× 10-6Fig. 6 (a), that is, the magnetism of the lower core
As shown in the figure showing the magnetic domain structure when the strain λ is positive,
A vertical crack domain wall (a) occurs in the turn, and the recording / reproducing characteristics
In practice, FeNi has a slightly negative magnetostriction.
Since it is desirable to set the composition ratio, magnetostriction λ = 0.0
× 10-6~ -0.6 x 10-6At the FeNi composition ratio
It is common to perform plating film formation. Note that FIG.
(B) shows the magnetic domain structure when the magnetostriction λ of the lower core is made negative.
Shows.

【0006】[0006]

【発明が解決しようとする課題】ここでまずはじめに、
パーマロイメッキ膜の磁歪λに対する初透磁率μの変化
を図8に示す。ただし、パーマロイメッキ膜に対して外
部応力が加わっていない状態で測定したデータであり、
アニール処理をしないデータと、アニール処理(250
℃2時間)したデータを示している。なお、アニール処
理は薄膜ヘッドの製造プロセス上どうしても避けられな
い工程である。図8から判るように、アニール処理が施
されていない場合は、初透磁率がほぼ一定の値(約30
00μ程度)になっているが、アニール処理(250
℃、2時間)した場合は、磁歪λが零の近傍だけ初透磁
率μが2800程度になり、零の近傍から離れるに従っ
て徐々に小さくなっていることが理解でき、従来の薄膜
ヘッドのパーマロイメッキ膜の磁歪λを0.0×10-6
〜−0.6×10-6にした条件は、最適な条件であるよ
うに考えられる。
[Problems to be Solved by the Invention] Here, first,
FIG. 8 shows changes in the initial magnetic permeability μ with respect to the magnetostriction λ of the permalloy plated film. However, the data was measured with no external stress applied to the permalloy plating film,
Data without annealing and annealing (250
Data for 2 hours). The annealing treatment is an unavoidable step in the manufacturing process of the thin film head. As can be seen from FIG. 8, when the annealing treatment is not performed, the initial magnetic permeability has a substantially constant value (about 30%).
Although it is about 00 μ), an annealing treatment (250
It can be understood that the initial magnetic permeability μ becomes about 2800 only in the vicinity of zero of the magnetostriction λ, and gradually decreases with increasing distance from the vicinity of zero when the magnetostriction λ is close to zero. The magnetostriction λ of the film is 0.0 × 10 -6
The condition of -0.6 × 10 -6 is considered to be the optimum condition.

【0007】しかしながら、記録再生感度をさらに向上
させるには、パーマロイメッキ膜の磁気特性である初透
磁率μをさらに大きくすることが必要である。本発明
は、上記の問題点に留意し、静磁気特性である初透磁率
μを向上させ、従来よりさらに高密度な記録再生特性を
可能とする薄膜ヘッドを提供することを目的としてい
る。
However, in order to further improve the recording / reproducing sensitivity, it is necessary to further increase the initial permeability μ which is the magnetic characteristic of the permalloy plated film. The present invention has been made in consideration of the above problems, and an object of the present invention is to provide a thin film head that improves the initial magnetic permeability μ, which is a magnetostatic characteristic, and enables a recording / reproducing characteristic with a higher density than ever before.

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に、本発明は、上部コアの磁歪λを−2.0×10-6
−1.0×10-6にしたことを特徴とする薄膜ヘッドで
ある。
In order to achieve this object, the present invention sets the magnetostriction λ of the upper core to -2.0 × 10 -6 ~.
It is a thin film head characterized by being set to -1.0 × 10 -6 .

【0009】[0009]

【作用】上記手段により、外部応力として圧縮応力が上
部コアに加わった場合、初透磁率μが3700〜400
0程度になり、記録再生感度が向上するため、従来に比
較して非常に高密度な記録再生ができる薄膜ヘッドが提
供できる。
By the above means, when a compressive stress is applied as an external stress to the upper core, the initial permeability μ is 3700 to 400.
Since it becomes about 0 and the recording / reproducing sensitivity is improved, it is possible to provide a thin film head capable of extremely high density recording / reproducing as compared with the conventional one.

【0010】[0010]

【実施例】本発明の薄膜ヘッドの構造は先に従来例で説
明した図1、図2に示すものと同じ構造であり、その説
明は省略する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the thin film head of the present invention is the same as that shown in FIGS.

【0011】ここで、図1に示す構成において、絶縁レ
ジスト8は、高分子樹脂でできているため、後工程の製
造プロセスを通して若干ながら体積が減少することが判
った。したがって、上部コア3はこの絶縁レジスト8の
体積減少の影響を受けて、外部から圧縮応力が加わった
状態になっている。
Here, in the structure shown in FIG. 1, it has been found that the insulating resist 8 is made of a polymer resin, so that the volume is slightly reduced throughout the manufacturing process of the subsequent steps. Therefore, the upper core 3 is affected by the volume reduction of the insulating resist 8 and is in a state where compressive stress is applied from the outside.

【0012】そこで、外部応力として、圧縮応力が加わ
ったときの磁歪λに対する初透磁率μの変化および引っ
張り応力が加わったときの磁歪λに対する初透磁率μの
変化を調べた結果を図3に示す。図3に示すように、圧
縮応力が加わった場合は、磁歪λが−2.0×10-6
−1.0×10-6であるときに初透磁率μが3700〜
4000と一番大きくなり、逆に引っ張り応力が加わっ
た場合は、磁歪λが+1.0×10-6〜+2.0×10
-6であるときに初透磁率が3700〜4000と一番大
きくなっていることが判った。
Therefore, FIG. 3 shows the results of examining the change in the initial permeability μ with respect to the magnetostriction λ when a compressive stress is applied as the external stress and the change in the initial permeability μ with respect to the magnetostriction λ when the tensile stress is applied. Show. As shown in FIG. 3, when compressive stress is applied, the magnetostriction λ is −2.0 × 10 −6
When −1.0 × 10 −6 , the initial permeability μ is 3700 to
The maximum value is 4000, and conversely, when tensile stress is applied, the magnetostriction λ is + 1.0 × 10 −6 to + 2.0 × 10.
It was found that the initial magnetic permeability was 3700 to 4000, which was the largest when it was -6 .

【0013】以上のことから、上部コア5に対しては、
圧縮応力が加わっているので、磁歪λを−2.0×10
-6〜−1.0×10-6にした方が良いのではないかと推
定した。そこで、下部コア3の磁歪λを零近傍(0.0
×10-6±0.5×10-6)に固定して、上部コア5の
磁歪λを変化させたときのインダクタンスLを測定し
た。そのときの結果を図4に示す。なお、インダクタン
スLと初透磁率μの関係は比例関係にあるため、初透磁
率μが大きくなれば、インダクタンスLが大きくなるこ
とは良く知られていることである。図4に示すように、
磁歪λが−2.0×10-6〜−1.0×10-6であると
きにインダクタンスLが一番大きくなっていることが判
った。したがって、上部コア5は、磁歪λを−2.0×
10-6〜−1.0×10-6にした方が良いことが判っ
た。
From the above, for the upper core 5,
Since a compressive stress is applied, the magnetostriction λ is -2.0 × 10.
It was estimated that -6 to -1.0 × 10 -6 was better. Therefore, the magnetostriction λ of the lower core 3 is close to zero (0.0
The inductance L was measured when the magnetostriction λ of the upper core 5 was changed by fixing it to × 10 -6 ± 0.5 × 10 -6 ). The result at that time is shown in FIG. Since the inductance L and the initial permeability μ are in a proportional relationship, it is well known that the inductance L increases as the initial permeability μ increases. As shown in FIG.
It was found that increases the inductance L is best when magnetostriction λ is -2.0 × 10 -6 ~-1.0 × 10 -6. Therefore, the upper core 5 has a magnetostriction λ of −2.0 ×.
It has been found that it is better to set 10 −6 to −1.0 × 10 −6 .

【0014】次に、同様に下部コア3に対しても検討を
行った。上部コア5の磁歪λを−1.5×10-6に一定
にして、下部コア3の磁歪λを変化させてインダクタン
スLを測定した結果を図5に示す。図5に示すように、
下部コア3の場合は、磁歪λを0.0×10-6〜+1.
0×10-6にしたときが一番大きくなることが判った。
下部コア3の場合は、アルチック基板1と絶縁膜(アル
ミナ膜)2の剛性が強いために引っ張り応力が加わって
いると考えられるので、磁歪λが+1.0×10-6
2.0×10-6にした方が良いと予想したのであるが、
実際には、薄膜ヘッドのコアパターン形状にすると図6
(a)(b)に示すように磁歪λを正にすると縦割れ磁
壁が発生するために、磁歪λを正にすることは、好まし
くないことが判った。したがって、下部コアの磁歪λは
−1.0×10-6〜0.0×10-6にすべきであること
が判った。
Next, the lower core 3 was similarly examined. FIG. 5 shows the result of measuring the inductance L by changing the magnetostriction λ of the lower core 3 while keeping the magnetostriction λ of the upper core 5 constant at −1.5 × 10 −6 . As shown in FIG.
In the case of the lower core 3, the magnetostriction λ is 0.0 × 10 −6 to +1.
It turned out that it became the largest when it was set to 0 × 10 -6 .
In the case of the lower core 3, it is considered that tensile stress is applied because the rigidity of the AlTiC substrate 1 and the insulating film (alumina film) 2 is strong, so that the magnetostriction λ is + 1.0 × 10 −6 +
I expected it to be 2.0 x 10 -6 ,
Actually, when the shape of the core pattern of the thin film head is set as shown in FIG.
As shown in (a) and (b), when the magnetostriction λ is set to be positive, a vertically cracked magnetic domain wall is generated, so it has been found that it is not preferable to set the magnetostriction λ to be positive. Therefore, it was found that the magnetostriction λ of the lower core should be -1.0 × 10 -6 to 0.0 × 10 -6 .

【0015】次に、上部コアの磁歪λが−0.6×10
-6〜0.0×10-6である薄膜ヘッド(従来例)と、−
2.0×10-6〜−1.0×10-6である薄膜ヘッド
(実施例)との比較を記録周波数特性で行った。図7は
記録周波数を横軸にし、再生出力を縦軸にしたときの記
録周波数特性を示す図である。図7に示すように、従来
の薄膜ヘッド(従来例)に比較して、本発明の薄膜ヘッ
ド(実施例)は明らかに高密度で、高い再生出力が得ら
れていることが判る。
Next, the magnetostriction λ of the upper core is -0.6 × 10.
-6 to 0.0x10 -6 thin film head (conventional example),-
A recording frequency characteristic was compared with a thin film head having a thickness of 2.0 × 10 −6 to −1.0 × 10 −6 (Example). FIG. 7 is a diagram showing the recording frequency characteristics when the recording frequency is on the horizontal axis and the reproduction output is on the vertical axis. As shown in FIG. 7, it is clear that the thin film head of the present invention (example) has a clearly higher density and a higher reproduction output than the conventional thin film head (conventional example).

【0016】以上のように、本発明の薄膜ヘッドは従来
のものよりも明らかに高密度な記録再生が可能となる。
As described above, the thin film head of the present invention can obviously perform recording and reproducing at a higher density than the conventional one.

【0017】[0017]

【発明の効果】前記実施例の説明より明らかなように本
発明の薄膜ヘッドは、上部コアの磁歪λを−2.0×1
-6〜−1.0×10-6にすることにより、初透磁率μ
が3700〜4000が得られるようになったため、従
来よりもさらに高密度な記録再生が可能となった。この
ことで従来よりもさらに高密度なハードディスクドライ
ブ装置が提供できるようになった。
As is clear from the description of the above embodiment, in the thin film head of the present invention, the magnetostriction λ of the upper core is −2.0 × 1.
By setting 0 -6 to -1.0 x 10 -6 , the initial permeability μ
Since 3700 to 4000 can be obtained, it is possible to record and reproduce at a higher density than in the past. As a result, it has become possible to provide a hard disk drive device having a higher density than ever before.

【図面の簡単な説明】[Brief description of drawings]

【図1】薄膜ヘッドをABS面からみたときの構造を示
す図
FIG. 1 is a diagram showing a structure of a thin film head when viewed from an ABS surface.

【図2】薄膜ヘッドをABS面に対して垂直に切断した
ときの断面図
FIG. 2 is a sectional view of the thin film head cut perpendicularly to the ABS surface.

【図3】外部応力が加わったときの磁歪λに対する初透
磁率μの変化を示す図
FIG. 3 is a diagram showing changes in initial permeability μ with respect to magnetostriction λ when an external stress is applied.

【図4】上部コアの磁歪λを変化させたときのインダク
タンスLの変化を示す図
FIG. 4 is a diagram showing a change in the inductance L when the magnetostriction λ of the upper core is changed.

【図5】下部コアの磁歪λを変化させたときのインダク
タンスLの変化を示す図
FIG. 5 is a diagram showing changes in the inductance L when the magnetostriction λ of the lower core is changed.

【図6】(a)下部コアの磁歪λを正にしたときの磁区
構造を示す図 (b)下部コアの磁歪λを負にしたときの磁区構造を示
す図
6A is a diagram showing a magnetic domain structure when the magnetostriction λ of the lower core is positive, and FIG. 6B is a diagram showing a magnetic domain structure when the magnetostriction λ of the lower core is negative.

【図7】従来例と実施例の記録周波数特性を示す図FIG. 7 is a diagram showing recording frequency characteristics of a conventional example and an example.

【図8】外部応力が加わっていないときの磁歪λに対す
る初透磁率μの変化を示す図
FIG. 8 is a diagram showing changes in initial permeability μ with respect to magnetostriction λ when no external stress is applied.

【符号の説明】[Explanation of symbols]

1 スライダーとなるアルチック基板 2 絶縁膜(アルミナ膜) 3 下部コア 4 READ/WRITEギャップ絶縁膜(アルミナ
膜) 5 上部コア 6 保護用絶縁膜(アルミナ膜) 7 READ/WRITE用のコイル 8 絶縁レジスト膜
1 Altic substrate that serves as a slider 2 Insulating film (alumina film) 3 Lower core 4 READ / WRITE gap insulating film (alumina film) 5 Upper core 6 Protective insulating film (alumina film) 7 READ / WRITE coil 8 Insulating resist film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 アルチック基板の上に絶縁膜が形成さ
れ、その上に下部コア、READ/WRITEギャップ
絶縁膜、上部コア、保護用絶縁膜が形成され、前記下部
コアと上部コア間にREAD/WRITE用のコイルが
絶縁レジスト膜を介して設けられた構成であって、上部
コアの磁歪λが、−2.0×10-6〜−1.0×1016
であることを特徴とする薄膜ヘッド。
1. An insulating film is formed on an AlTiC substrate, and a lower core, a READ / WRITE gap insulating film, an upper core, and a protective insulating film are formed on the insulating film, and a READ / write layer is formed between the lower core and the upper core. The coil for WRITE is provided via an insulating resist film, and the magnetostriction λ of the upper core is −2.0 × 10 −6 to −1.0 × 10 16.
Is a thin film head.
【請求項2】 アルチック基板の上に絶縁膜が形成さ
れ、その上に下部コア、READ/WRITEギャップ
絶縁膜、上部コア、保護用絶縁膜が形成され、前記下部
コアと上部コア間にREAD/WRITE用のコイルが
絶縁レジスト膜を介して設けられた構成であって、下部
コアの磁歪λが、−1.0×10-6〜0.0×10-6
あり、かつ、上部コアの磁歪λが、−2.0×10-6
−1.0×10-6であることを特徴とする薄膜ヘッド。
2. An insulating film is formed on an AlTiC substrate, and a lower core, a READ / WRITE gap insulating film, an upper core, and a protective insulating film are formed on the insulating film, and a READ / write layer is formed between the lower core and the upper core. A coil for WRITE is provided via an insulating resist film, and the magnetostriction λ of the lower core is −1.0 × 10 −6 to 0.0 × 10 −6 and the upper core has a magnetostriction λ of −1.0 × 10 −6 to 0.0 × 10 −6 . Magnetostriction λ is -2.0 × 10 -6 ~
A thin film head characterized in that the thickness is −1.0 × 10 −6 .
JP22765293A 1993-09-14 1993-09-14 Thin film head Pending JPH0785419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22765293A JPH0785419A (en) 1993-09-14 1993-09-14 Thin film head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22765293A JPH0785419A (en) 1993-09-14 1993-09-14 Thin film head

Publications (1)

Publication Number Publication Date
JPH0785419A true JPH0785419A (en) 1995-03-31

Family

ID=16864224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22765293A Pending JPH0785419A (en) 1993-09-14 1993-09-14 Thin film head

Country Status (1)

Country Link
JP (1) JPH0785419A (en)

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