JPH0779385A - Charge detection method for ccd image pickup element - Google Patents

Charge detection method for ccd image pickup element

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Publication number
JPH0779385A
JPH0779385A JP5245908A JP24590893A JPH0779385A JP H0779385 A JPH0779385 A JP H0779385A JP 5245908 A JP5245908 A JP 5245908A JP 24590893 A JP24590893 A JP 24590893A JP H0779385 A JPH0779385 A JP H0779385A
Authority
JP
Japan
Prior art keywords
horizontal transfer
charge
charge detection
image pickup
transfer register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5245908A
Other languages
Japanese (ja)
Inventor
Hitoshi Nakada
均 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5245908A priority Critical patent/JPH0779385A/en
Publication of JPH0779385A publication Critical patent/JPH0779385A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the best S/N in response to an incident luminous quantity without giving a hindrance of a charge voltage conversion function by using selectively a horizontal transfer register depending on a received luminous quantity so as to switch the charge detection circuit. CONSTITUTION:A separate charge detection circuit is connected to each of horizontal transfer registers 3, 4 respectively. A capacitor 6, a reset switch 11 and an output extract amplifier 8 as components of the charge detection circuit are connected to the horizontal transfer circuit 3. Similarly a capacitor 7, a reset switch 12 and an output extract amplifier 9 as components of the charge detection circuit are connected to the horizontal transfer circuit 4. The capacitors 6, 7 store the signal charge sent through the horizontal transfer registers 3, 4 respectively and converts the signal into a voltage. The capacitance of the capacitors 3, 4 differs from each other. Thus, an output voltage is obtained via the charge detection circuit whose charge voltage conversion efficiency is different by selecting either of the two horizontal transfer registers 3, 4 to provide an output.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は固体撮像素子に関し、特
にCCD(Charge CoupledDevic
e)の電荷検出方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device, and more particularly to a CCD (Charge Coupled Device).
e) relates to the charge detection method.

【0002】[0002]

【従来の技術】CCD撮像素子は、光を受けて光電変換
を行う縦横マトリクス状に配列された多数の受光用画素
部と、各画素部で光電変換された電荷を垂直方向に転送
する複数列の平行に配列された垂直転送レジスタと、該
複数列の垂直転送レジスタの端部に設けた水平転送レジ
スタと、該水平転送レジスタに接続された電荷検出回路
とにより構成される。電荷検出回路は、水平転送レジス
タを介して転送されてきた受光量に応じた電荷を蓄積し
電圧に変換するキャパシタと、リセット用のスイッチ
と、キャパシタから電圧出力を取り出して外部に出力す
るアンプとにより構成される。
2. Description of the Related Art A CCD image pickup device includes a large number of light-receiving pixel portions arranged in a vertical and horizontal matrix for receiving light and performing photoelectric conversion, and a plurality of columns for vertically transferring the charges photoelectrically converted in each pixel portion. Of the vertical transfer registers arranged in parallel with each other, a horizontal transfer register provided at an end of the vertical transfer registers of the plurality of columns, and a charge detection circuit connected to the horizontal transfer registers. The charge detection circuit is composed of a capacitor for accumulating charges corresponding to the amount of received light transferred through the horizontal transfer register and converting it into a voltage, a reset switch, and an amplifier for extracting a voltage output from the capacitor and outputting it to the outside. It is composed of

【0003】受光部を構成する各画素部に入射した光は
各画素部で受光量に応じた電荷に変換され、垂直転送レ
ジスタおよび水平転送レジスタを介して検出回路に転送
される。検出回路では転送されてきた電荷をキャパシタ
に蓄積し、これをアンプを介して取り出すことにより、
受光量に応じた電圧として撮像素子の出力を得る。この
場合、電荷量をQ、キャパシタ容量をC、出力電圧をV
とすれば、V=Q/Cであり、使用するキャパシタの容
量Cにより同じ電荷量でも出力電圧の値は異なってく
る。逆に異なる電荷量であってもキャパシタの容量を変
えれば同じ出力電圧とすることができる。
The light incident on each pixel portion forming the light receiving portion is converted into electric charges according to the amount of light received at each pixel portion, and transferred to the detection circuit via the vertical transfer register and the horizontal transfer register. In the detection circuit, the transferred charge is stored in the capacitor, and it is taken out through the amplifier.
The output of the image sensor is obtained as a voltage according to the amount of received light. In this case, the charge amount is Q, the capacitor capacitance is C, and the output voltage is V
Then, V = Q / C, and the value of the output voltage varies depending on the capacitance C of the capacitor used even if the amount of charge is the same. On the contrary, even if the charges are different, the same output voltage can be obtained by changing the capacitance of the capacitor.

【0004】一方、CCD撮像素子の雑音としては、入
力信号量(光量)に依存性があるショットノイズと入力
信号量に無関係なリセット・アンプノイズがある。この
ようなノイズ発生状態のグラフを図2に示す。aは光量
に応じた信号出力であり、bはショットノイズ、cはリ
セット・アンプノイズを示す。図から分かるように、C
CD撮像素子の雑音は、入射光量の大きいところではシ
ョットノイズが支配的であり、入射光量の小さいところ
ではリセット・アンプノイズが支配的となる。ショット
ノイズは信号量の平方根に比例する。従って信号電荷量
が多くなるとノイズ量自体は多くなるがそのときの信号
電荷量に対する比率は減少しS/N比が向上する。従っ
て、入射光量の大きいところではキャパシタの容量を大
きくして電荷量を大きくすることによりS/N比を向上
させることができる。
On the other hand, as the noise of the CCD image pickup device, there are shot noise which depends on the input signal amount (light amount) and reset amplifier noise which is unrelated to the input signal amount. A graph of such a noise occurrence state is shown in FIG. a is a signal output according to the amount of light, b is shot noise, and c is reset amplifier noise. As you can see from the figure, C
The noise of the CD image pickup device is dominated by shot noise when the amount of incident light is large, and reset amplifier noise is dominated when the amount of incident light is small. Shot noise is proportional to the square root of the signal amount. Therefore, when the signal charge amount increases, the noise amount itself increases, but the ratio to the signal charge amount at that time decreases and the S / N ratio improves. Therefore, when the amount of incident light is large, the S / N ratio can be improved by increasing the capacitance of the capacitor and increasing the amount of charge.

【0005】一方、入射光量の小さいところでは、信号
出力にかかわらずほぼ一定のリセット・アンプノイズが
支配的であるため、出力電圧を大きくすることによりそ
の出力に対するノイズの比率を減少させてS/N比を向
上させることができる。
On the other hand, in a place where the amount of incident light is small, almost constant reset amplifier noise is dominant regardless of the signal output. Therefore, by increasing the output voltage, the ratio of noise to the output is reduced and S / The N ratio can be improved.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、従来の
CCD撮像素子においては、水平転送レジスタに接続す
る電荷検出回路が1つのみ設けられていたため、キャパ
シタの容量は一定に定められ、従って出力電荷量によっ
て異なる最善のS/N比を得るように電荷電圧変換効率
を変えることができなかった。
However, in the conventional CCD image pickup device, since only one charge detection circuit connected to the horizontal transfer register is provided, the capacitance of the capacitor is fixed and therefore the output charge amount. It was not possible to change the charge-voltage conversion efficiency so as to obtain the different optimum S / N ratio.

【0007】この場合、外部からの電圧印加により電荷
電圧変換部のキャパシタ容量を連続的に可変とすること
は、一般にキャパシタ容量が非常に小さいものであるた
め、可変機構の容量がキャパシタ容量に比べ大きくなり
すぎて変換部に対する影響が大きくなりキャパシタの電
荷電圧変換機能が阻害される。
In this case, continuously changing the capacitor capacity of the charge-voltage converter by applying a voltage from the outside generally has a very small capacitor capacity. Therefore, the capacity of the variable mechanism is smaller than that of the capacitor capacity. If it becomes too large, the influence on the conversion unit becomes large, and the charge-voltage conversion function of the capacitor is hindered.

【0008】また、複数の異なる容量を有する変換回路
を1つの水平転送レジスタに接続して変換回路を切り換
えて使用する構成とすれば、これも前述の場合と同様に
切り換え機構の容量が変換部のキャパシタ容量に比べ大
きくなりすぎて変換部に対する影響が大きくなりキャパ
シタの電荷電圧変換機能が阻害される。
Further, if the conversion circuits having a plurality of different capacities are connected to one horizontal transfer register and the conversion circuits are switched and used, the capacity of the switching mechanism is the same as in the case described above. The capacitance of the capacitor becomes too large and the influence on the conversion portion becomes large, which hinders the charge-voltage conversion function of the capacitor.

【0009】本発明は上記従来技術の問題点に鑑みなさ
れたものであって、電荷電圧変換機能に支障を与えるこ
となく入射光量に応じて最善のS/N比が得られるよう
に電荷電圧変換効率を可変とするCCD撮像素子の電荷
検出方法の提供を目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and the charge-voltage conversion is performed so that the optimum S / N ratio can be obtained according to the amount of incident light without hindering the charge-voltage conversion function. It is an object of the present invention to provide a charge detection method for a CCD image pickup device whose efficiency is variable.

【0010】[0010]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係るCCD撮像素子の電荷検出方法は、C
CD撮像素子の水平転送レジスタを複数個設け、各水平
転送レジスタに各々異なる電荷電圧変換効率を持つ電荷
検出回路を接続し、受光光量に応じて水平転送レジスタ
を選択的に使用することにより前記電荷検出回路を切り
換えることを特徴としている。
In order to achieve the above-mentioned object, a charge detecting method for a CCD image pickup device according to the present invention comprises:
By providing a plurality of horizontal transfer registers of the CD image pickup device, connecting a charge detection circuit having a different charge-voltage conversion efficiency to each horizontal transfer register, and selectively using the horizontal transfer register according to the amount of received light, The feature is that the detection circuit is switched.

【0011】好ましい実施例においては、前記電荷検出
回路は、光電変換された電荷を蓄積するキャパシタと、
リセット用スイッチと、出力取り出し用アンプとからな
り、各電荷検出回路のキャパシタの容量を異ならせるこ
とにより電荷電圧変換効率を変えたことを特徴としてい
る。
In a preferred embodiment, the charge detection circuit comprises a capacitor for storing photoelectrically converted charges,
It comprises a reset switch and an output extraction amplifier, and is characterized in that the charge-voltage conversion efficiency is changed by making the capacitances of the capacitors of the charge detection circuits different.

【0012】また、前記目的を達成するため、本発明に
係るCCD撮像素子は、光電変換を行う複数の受光用画
素部と、各画素部で光電変換された電荷を垂直方向に転
送する複数の平行に配列された垂直転送レジスタと、該
複数の垂直転送レジスタの端部に設けた水平転送レジス
タと、該水平転送レジスタに接続された電荷検出用キャ
パシタとを有するCCD撮像素子において、前記水平転
送レジスタを複数個並列して設け、該複数の水平転送レ
ジスタの内1つを選択的に前記垂直転送レジスタに接続
するための切り換え回路を設け、前記電荷検出用キャパ
シタの容量を各水平転送レジスタごとに異ならせたこと
を特徴としている。
Further, in order to achieve the above object, the CCD image pickup device according to the present invention comprises a plurality of light receiving pixel portions for performing photoelectric conversion, and a plurality of vertically transferring electric charges photoelectrically converted in each pixel portion. In the CCD image pickup device having a vertical transfer register arranged in parallel, a horizontal transfer register provided at an end of the plurality of vertical transfer registers, and a charge detection capacitor connected to the horizontal transfer register, the horizontal transfer A plurality of registers are provided in parallel, a switching circuit for selectively connecting one of the plurality of horizontal transfer registers to the vertical transfer register is provided, and the capacitance of the charge detection capacitor is provided for each horizontal transfer register. It is characterized by different.

【0013】[0013]

【作用】入射光量に応じて水平転送レジスタが選択さ
れ、これにより各水平転送レジスタに連結された異なる
固定容量をもつ電荷検出回路が切り換えられ電荷電圧変
換効率が変更される。
The horizontal transfer register is selected according to the amount of incident light, whereby the charge detection circuits having different fixed capacitances connected to each horizontal transfer register are switched to change the charge-voltage conversion efficiency.

【0014】[0014]

【実施例】図1は、本発明の実施例に係るCCD撮像素
子の構成図である。このCCD撮像素子10は、縦横の
マトリクス状に配列された多数の受光用の画素部1を有
し、各画素部1はマトリクスの各列ごとに設けた垂直転
送レジスタ2に連結されている。各画素部1に入射した
光は光の強さ(光量)に応じて電荷の形で蓄積され垂直
転送レジスタ2に移送される。垂直転送レジスタ2は多
数の電極を垂直方向に並べて配置したものであり、各電
極に電圧を順番に印加することにより光電変換された電
荷を矢印で示すように垂直方向に転送する。
1 is a block diagram of a CCD image pickup device according to an embodiment of the present invention. The CCD image pickup device 10 has a large number of light receiving pixel portions 1 arranged in a matrix in the vertical and horizontal directions, and each pixel portion 1 is connected to a vertical transfer register 2 provided for each column of the matrix. The light incident on each pixel portion 1 is accumulated in the form of electric charge according to the intensity of light (light amount) and is transferred to the vertical transfer register 2. The vertical transfer register 2 is formed by arranging a large number of electrodes side by side in the vertical direction, and by sequentially applying a voltage to each electrode, the charges photoelectrically converted are transferred in the vertical direction as shown by arrows.

【0015】各垂直転送レジスタ2の端部には2つの水
平転送レジスタ3,4が並列して設けられる。この2つ
の水平転送レジスタ3,4は切り換えゲート回路5を介
して各垂直転送レジスタ2に接続される。切り換えゲー
ト回路5を駆動することにより水平転送レジスタ3,4
の内の一方が垂直転送レジスタ2に接続される。これに
より、垂直転送レジスタ2を通して送られた信号電荷は
順次時系列的に水平転送レジスタ3または4のいづれか
に対し選択的に送り出される。
At the end of each vertical transfer register 2, two horizontal transfer registers 3 and 4 are provided in parallel. The two horizontal transfer registers 3 and 4 are connected to each vertical transfer register 2 via a switching gate circuit 5. The horizontal transfer registers 3 and 4 are driven by driving the switching gate circuit 5.
One of the two is connected to the vertical transfer register 2. As a result, the signal charges sent through the vertical transfer register 2 are selectively sent out sequentially to the horizontal transfer register 3 or 4 in a time series.

【0016】あるいは、垂直転送レジスタ2を通して送
られた信号電荷を一旦すべて水平転送レジスタ3に送り
出し、必要に応じてゲート回路5にパルスを印加して水
平転送レジスタ3内の信号電荷を水平転送レジスタ4に
転送するように構成してもよい。
Alternatively, all the signal charges sent through the vertical transfer register 2 are once sent out to the horizontal transfer register 3, and a pulse is applied to the gate circuit 5 as necessary to transfer the signal charges in the horizontal transfer register 3 to the horizontal transfer register. 4 may be configured to be transferred.

【0017】各水平転送レジスタ3,4にはそれぞれ別
の電荷検出回路が接続される。水平転送回路3には、電
荷検出回路としてキャパシタ6、リセットスイッチ11
および出力取り出し用アンプ8が連結される。同様に水
平転送レジスタ4には、電荷検出回路としてキャパシタ
7、リセットスイッチ9および出力取り出し用アンプ9
が連結される。各キャパシタ6,7はそれぞれ水平転送
レジスタ3,4を通して送られた信号電荷を蓄積し、電
圧に変換する。この電圧は出力取り出し用アンプ8,9
を介して外部に出力される。
Separate charge detection circuits are connected to the horizontal transfer registers 3 and 4, respectively. The horizontal transfer circuit 3 includes a capacitor 6 and a reset switch 11 as a charge detection circuit.
And the output extracting amplifier 8 is connected. Similarly, the horizontal transfer register 4 includes a capacitor 7, a reset switch 9, and an output extraction amplifier 9 as a charge detection circuit.
Are connected. The capacitors 6 and 7 accumulate the signal charges sent through the horizontal transfer registers 3 and 4, respectively, and convert them into a voltage. This voltage is output amplifiers 8 and 9
Is output to the outside via.

【0018】水平転送レジスタ3に接続されたキャパシ
タ6の容量と水平転送レジスタ4に接続されたキャパシ
タ7の容量はそれぞれ異なっている。従って、2つの水
平転送レジスタ 3,4のうちいづれかを選択して使用
することにより、電荷電圧変換効率の異なる電荷検出回
路を介して出力電圧を得ることができる。
The capacitance of the capacitor 6 connected to the horizontal transfer register 3 and the capacitance of the capacitor 7 connected to the horizontal transfer register 4 are different from each other. Therefore, by selecting and using either of the two horizontal transfer registers 3 and 4, the output voltage can be obtained through the charge detection circuits having different charge-voltage conversion efficiencies.

【0019】この場合、入射光量が大きいときには容量
の大きいキャパシタに接続する水平転送レジスタを選択
し、キャパシタに入力される信号電荷をなるべく多くす
ることによりその信号電荷量に対するショットノイズの
発生比率を低下させてS/N比の向上を図ることができ
る。
In this case, when the amount of incident light is large, a horizontal transfer register connected to a capacitor having a large capacitance is selected and the amount of signal charge input to the capacitor is increased as much as possible to reduce the generation ratio of shot noise with respect to the amount of signal charge. Thus, the S / N ratio can be improved.

【0020】また、入射光量が小さいときには容量の小
さいキャパシタに接続する水平転送レジスタを選択し、
信号電荷量に対する出力電圧を大きくする。これにより
出力電圧に対するリセット・アンプノイズの発生比率が
低下しS/N比の向上が図られる。この場合、信号電荷
量に対する電荷電圧変換率が上がるので、検出感度が向
上する。
When the amount of incident light is small, a horizontal transfer register connected to a capacitor having a small capacitance is selected,
Increase the output voltage with respect to the signal charge amount. As a result, the generation ratio of reset amplifier noise with respect to the output voltage is reduced, and the S / N ratio is improved. In this case, since the charge-voltage conversion rate with respect to the signal charge amount is increased, the detection sensitivity is improved.

【0021】なお、上記実施例では水平転送レジスタを
2個設けたが、3個またはそれ以上設けおのおの異なる
容量のキャパシタに接続させ適宜切り換えて使用するよ
うに構成してもよい。
Although two horizontal transfer registers are provided in the above-described embodiment, three or more horizontal transfer registers may be provided and connected to capacitors of different capacities so as to be appropriately switched and used.

【0022】[0022]

【発明の効果】以上説明したように、本発明において
は、各々異なる容量のキャパシタに接続する複数の水平
転送レジスタを設け、入射光量に応じて適宜使用する水
平転送レジスタを選択することにより、異なる容量のキ
ャパシタを用いて電荷電圧変換効率を変えて電荷量を検
出することができる。従って、入射光の信号電荷が多い
場合には容量の大きいキャパシタを用い、入射光の信号
電荷が少ない場合には容量の小さいキャパシタを用い
て、入射光量に対する最適な電荷電圧変換効率としてS
/N比を向上させることができる。また、入射光量が小
さい場合には、信号電荷量に対する電荷電圧変換率が上
がるので、検出感度が向上する。
As described above, according to the present invention, a plurality of horizontal transfer registers connected to capacitors having different capacities are provided, and the horizontal transfer register to be used is selected according to the amount of incident light. The charge amount can be detected by changing the charge-voltage conversion efficiency using a capacitor having a capacitance. Therefore, when the signal charge of the incident light is large, a capacitor having a large capacitance is used, and when the signal charge of the incident light is small, a capacitor having a small capacitance is used, and the optimum charge-voltage conversion efficiency with respect to the incident light amount is S.
The / N ratio can be improved. Further, when the amount of incident light is small, the charge-voltage conversion rate with respect to the amount of signal charges is increased, so that the detection sensitivity is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の実施例に係るCCD撮像素子の構成
図である。
FIG. 1 is a configuration diagram of a CCD image pickup device according to an embodiment of the present invention.

【図2】 入射光量に対する信号および雑音出力のグラ
フである。
FIG. 2 is a graph of signal and noise output with respect to incident light amount.

【符号の説明】[Explanation of symbols]

1・・・画素部 2・・・垂直転送レジスタ 3,4・・・水平転送レジスタ 5・・・切り換えゲート回路 6,7・・・キャパシタ 8,9・・・出力取り出し用アンプ 10・・・CCD撮像素子 11,12・・・リセット用スイッチ 1 ... Pixel part 2 ... Vertical transfer register 3, 4 ... Horizontal transfer register 5 ... Switching gate circuit 6, 7 ... Capacitor 8, 9 ... Output extraction amplifier 10 ... CCD image pickup device 11, 12 ... Reset switch

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 CCD撮像素子の水平転送レジスタを複
数個設け、各水平転送レジスタに各々異なる電荷電圧変
換効率を持つ電荷検出回路を接続し、受光光量に応じて
水平転送レジスタを選択的に使用することにより前記電
荷検出回路を切り換えることを特徴とするCCD撮像素
子の電荷検出方法。
1. A plurality of horizontal transfer registers of a CCD image pickup device are provided, charge detection circuits having different charge-voltage conversion efficiencies are connected to each horizontal transfer register, and the horizontal transfer register is selectively used according to the amount of received light. A charge detection method for a CCD image pickup device, characterized in that the charge detection circuit is switched by performing the above.
【請求項2】 前記電荷検出回路は、光電変換された電
荷を蓄積するキャパシタと、リセット用スイッチと、出
力取り出し用アンプとからなり、各電荷検出回路のキャ
パシタの容量を異ならせることにより電荷電圧変換効率
を変えたことを特徴とする請求項1に記載のCCD撮像
素子の電荷検出方法。
2. The charge detection circuit includes a capacitor that stores photoelectrically converted charges, a reset switch, and an output extraction amplifier. The charge detection method for a CCD image pickup device according to claim 1, wherein the conversion efficiency is changed.
【請求項3】 光電変換を行う複数の受光用画素部と、
各画素部で光電変換された電荷を垂直方向に転送する複
数の平行に配列された垂直転送レジスタと、該複数の垂
直転送レジスタの端部に設けた水平転送レジスタと、該
水平転送レジスタに接続された電荷検出用キャパシタと
を有するCCD撮像素子において、前記水平転送レジス
タを複数個並列して設け、該複数の水平転送レジスタの
内1つを選択的に前記垂直転送レジスタに接続するため
の切り換え回路を設け、前記電荷検出用キャパシタの容
量を各水平転送レジスタごとに異ならせたことを特徴と
するCCD撮像素子。
3. A plurality of light receiving pixel portions for performing photoelectric conversion,
A plurality of vertical transfer registers arranged in parallel for transferring charges photoelectrically converted in each pixel section in the vertical direction, a horizontal transfer register provided at an end of the plurality of vertical transfer registers, and connected to the horizontal transfer register In a CCD image pickup device having a charge detecting capacitor, a plurality of the horizontal transfer registers are provided in parallel, and one of the plurality of horizontal transfer registers is selectively connected to the vertical transfer register. A CCD image pickup device characterized in that a circuit is provided and the capacitance of the charge detecting capacitor is made different for each horizontal transfer register.
JP5245908A 1993-09-06 1993-09-06 Charge detection method for ccd image pickup element Pending JPH0779385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5245908A JPH0779385A (en) 1993-09-06 1993-09-06 Charge detection method for ccd image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5245908A JPH0779385A (en) 1993-09-06 1993-09-06 Charge detection method for ccd image pickup element

Publications (1)

Publication Number Publication Date
JPH0779385A true JPH0779385A (en) 1995-03-20

Family

ID=17140623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5245908A Pending JPH0779385A (en) 1993-09-06 1993-09-06 Charge detection method for ccd image pickup element

Country Status (1)

Country Link
JP (1) JPH0779385A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194954A (en) * 2006-01-19 2007-08-02 Fujifilm Corp Solid-state imaging device, imaging apparatus, and imaging method
JP4799610B2 (en) * 2005-04-12 2011-10-26 プランメカ オイ CCD sensor and method for expanding the dynamic range of a CCD sensor
US8289425B2 (en) 2008-09-29 2012-10-16 Sony Corporation Solid-state image pickup device with an improved output amplifier circuitry

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4799610B2 (en) * 2005-04-12 2011-10-26 プランメカ オイ CCD sensor and method for expanding the dynamic range of a CCD sensor
JP2007194954A (en) * 2006-01-19 2007-08-02 Fujifilm Corp Solid-state imaging device, imaging apparatus, and imaging method
JP4692887B2 (en) * 2006-01-19 2011-06-01 富士フイルム株式会社 Imaging apparatus and imaging method
US8289425B2 (en) 2008-09-29 2012-10-16 Sony Corporation Solid-state image pickup device with an improved output amplifier circuitry

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