JPH0778780A - Vertical type diffusion furnace tube - Google Patents
Vertical type diffusion furnace tubeInfo
- Publication number
- JPH0778780A JPH0778780A JP22158493A JP22158493A JPH0778780A JP H0778780 A JPH0778780 A JP H0778780A JP 22158493 A JP22158493 A JP 22158493A JP 22158493 A JP22158493 A JP 22158493A JP H0778780 A JPH0778780 A JP H0778780A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- core tube
- groove
- opening
- diffusion furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体基板に不純物の熱
拡散を行なう縦型拡散炉に使用している炉芯管に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a furnace core tube used in a vertical diffusion furnace for thermally diffusing impurities in a semiconductor substrate.
【0002】[0002]
【従来の技術】図3(a)および(b)は従来の一例を
示す縦型拡散炉の断面図およびA部拡大図である。半導
体基板(以後ウェーハと称す。)に不純物を熱拡散させ
る従来の縦型拡散炉は、図3に示すように、床面に対し
垂直に設置されたヒータ316および炉芯管311と、
ウェーハ312を装填したボート313と,このボート
313を炉芯管311内に搬送させるための駆動部31
4と、この駆動部314とボート313を連結し熱処理
中に炉芯管311の炉口をふさぐボート架台315と、
炉芯管311を固定する炉芯管押え317とを備えてい
た。2. Description of the Related Art FIGS. 3 (a) and 3 (b) are a sectional view and an enlarged view of a portion A of a vertical diffusion furnace showing a conventional example. As shown in FIG. 3, a conventional vertical diffusion furnace for thermally diffusing impurities into a semiconductor substrate (hereinafter referred to as a wafer) includes a heater 316 and a furnace core tube 311 installed perpendicularly to a floor surface.
A boat 313 loaded with wafers 312 and a drive unit 31 for transporting the boat 313 into the furnace core tube 311.
4, a boat pedestal 315 that connects the drive unit 314 and the boat 313 to close the furnace opening of the furnace core tube 311 during heat treatment,
The furnace core tube holder 317 for fixing the furnace core tube 311 was provided.
【0003】次に、この縦型拡散炉の動作についてオキ
シ塩化リン(POCl3 )を用いたリン拡散を例に取っ
て説明する。まず、ウェーハ312を装填したボート3
13を炉芯管311内に搬送する。搬送は駆動部314
の動作によって実施される。この時、炉芯管311内は
ヒーター316によりあらかじめ500〜800℃の基
底温度に加熱保持されている。入炉後ウェーハ312は
基底温度から目的の処理温度、例えば1000℃に加熱
される。そして炉芯管311が処理温度に達した後、前
記オキシ塩化リンを含んだキャリアガス(反応ガス)
が、反応ガス導入口318より反応ガス配管319を通
り炉芯管311上部から炉内に導入され、ウェーハ31
2に拡散される。ここでウェーハ312に拡散させた後
の反応ガスは、排気口320より排気される。一定時間
拡散後、反応ガスの炉芯管311内への導入が停止し基
底基板迄降温後、駆動部314の動作によりボート31
3及びウェーハ312は炉芯管311外へ搬送され、そ
の後、ボート313よりウェーハ312を取り除き処理
終了となる。Next, the operation of this vertical diffusion furnace will be described by taking phosphorus diffusion using phosphorus oxychloride (POCl 3 ) as an example. First, the boat 3 loaded with the wafers 312
13 is conveyed into the furnace core tube 311. Transport is performed by the drive unit 314.
The operation is performed. At this time, the inside of the furnace core tube 311 is previously heated and maintained at a base temperature of 500 to 800 ° C. by the heater 316. After entering the furnace, the wafer 312 is heated from the base temperature to a target processing temperature, for example, 1000 ° C. Then, after the furnace core tube 311 reaches the processing temperature, the carrier gas (reaction gas) containing the phosphorus oxychloride.
Is introduced into the furnace from the upper part of the furnace core tube 311 through the reaction gas piping 319 through the reaction gas inlet 318, and the wafer 31
Spread to 2. The reaction gas after being diffused in the wafer 312 is exhausted from the exhaust port 320. After diffusion for a certain period of time, the introduction of the reaction gas into the furnace core tube 311 is stopped, the temperature is lowered to the base substrate, and then the boat 31 is operated by the operation of the driving unit 314.
3 and the wafer 312 are transferred to the outside of the furnace core tube 311, and then the wafer 312 is removed from the boat 313, and the processing ends.
【0004】また、不純物ソースとしては、オキシ塩化
リン(POCl3 )の他に三臭化リン(PBr3 )等も
使用されていた。As the impurity source, phosphorus tribromide (PBr 3 ) and the like have been used in addition to phosphorus oxychloride (POCl 3 ).
【0005】[0005]
【発明が解決しようとする課題】上述した従来の縦型拡
散炉では、反応ガスを炉芯管311の上部から導入し下
部の炉口部付近に設置された排気口より排気する構造と
なっていたので、炉芯管内に導入された反応ガスは、炉
口部に近づくにしたがってヒーター316の加熱ゾーン
からはずれしだいに冷却される。このため、排気口から
排気される前に反応ガスが液化され、液状の反応生成物
が炉口部の炉芯管内壁に付着し、これが炉芯管内壁を伝
わってボート架台端面上にたまる。The conventional vertical diffusion furnace described above has a structure in which the reaction gas is introduced from the upper part of the furnace core tube 311 and is exhausted from the exhaust port provided near the lower furnace opening part. Therefore, the reaction gas introduced into the furnace core tube is cooled as it moves out of the heating zone of the heater 316 as it approaches the furnace opening. For this reason, the reaction gas is liquefied before being exhausted from the exhaust port, and the liquid reaction product adheres to the inner wall of the furnace core tube at the furnace mouth portion, and this is transmitted along the inner wall of the furnace core tube and accumulates on the end face of the boat rack.
【0006】このため、たまった反応生成物がボート3
13の入出炉時に炉芯管311以外の装置内に飛散し装
置内を汚染したり,腐食させたり、さらには、ボートの
出炉時にボート及びウェーハ自体の熱により反応生成物
が再気化してウェーハ312に接触し再拡散するという
異常拡散を起しジャンクションの形成異常や表面不純物
の濃度異常を引き起すという問題がある。この問題は、
半導体装置の電気的特性異常による不良を発生させ重大
な問題となる。[0006] Therefore, the accumulated reaction products are generated in the boat 3
13 is scattered into the apparatus other than the furnace core tube 311 at the time of entering and exiting the furnace to contaminate or corrode the inside of the apparatus, and further, when the boat is exiting from the reactor, the reaction products are re-vaporized by the heat of the wafer and the wafer itself to re-vaporize the wafer. There is a problem in that abnormal diffusion such as contact with 312 and re-diffusion causes abnormal formation of junction and abnormal concentration of surface impurities. This problem,
This causes a defect due to abnormal electrical characteristics of the semiconductor device, which becomes a serious problem.
【0007】従って、本発明の目的は、反応ガスの凝結
により発生する反応生成物の炉芯管内以外の装置内への
汚染と腐食を防止するとともにボート及びウェーハ自体
の残熱による反応生成物の気化ガスでウェーハを再拡散
するという異常拡散を防止する縦型拡散炉用炉芯管を提
供することである。Therefore, the object of the present invention is to prevent the reaction products generated by the condensation of the reaction gas from being contaminated and corroded into the apparatus other than the furnace core tube, and to prevent the reaction products from the residual heat of the boat and the wafer itself. It is an object of the present invention to provide a furnace core tube for a vertical diffusion furnace that prevents abnormal diffusion of re-diffusing a wafer with vaporized gas.
【0008】[0008]
【課題を解決するための手段】本発明の特徴は、外周部
にヒータを配設し半導体基板の複数枚を搭載するボート
が搬出入する開口部を下端に有するとともにガス導入口
を上端側にガス排気口を下端側に備える縦型拡散炉用炉
芯管において、前記開口部から上側に所定の寸方だけ伸
びる内管部を設け、この内管部と外管部と挟まれてなる
溝の底面を前記ガス排気口に向けて下り勾配をもたせ該
ガス排気口と前記溝とを連ねる縦型拡散炉用炉芯管縦型
拡散炉用炉芯管である。A feature of the present invention is that it has an opening at the lower end and a gas inlet port at the upper end side, with an opening through which a boat having a plurality of semiconductor substrates mounted thereon is provided with a heater on the outer periphery thereof. In a vertical diffusion furnace core tube having a gas exhaust port at the lower end side, an inner tube portion extending upward from the opening by a predetermined dimension is provided, and a groove formed by sandwiching the inner tube portion and the outer tube portion. Is a furnace core tube for a vertical diffusion furnace, in which the bottom surface of the furnace has a downward gradient and the gas exhaust port and the groove are connected to each other.
【0009】[0009]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【0010】図1(a)および(b)は本発明の一実施
例を示す縦型拡散炉用炉芯管の底部の縦断面図および横
断面図である。この縦型拡散炉用炉芯管は、図1に示す
ように、ボートを積載するボート架台が搬出入する開口
部110から奥側に所定の寸方だけ伸びる内管部122
を設け、この内管部122と外管部111と挟まれる溝
の底面121を排気口120に向けて下り勾配をもたせ
たことである。なお、内管部122の端部は、落下して
くる反応生成物が乗らないように、排気口120に向け
て傾斜するようにし、さらに縁部も外側に向けて傾斜を
もつように形成することが望ましい。それ以外は従来例
と同じである。1 (a) and 1 (b) are a longitudinal sectional view and a lateral sectional view of a bottom portion of a furnace core tube for a vertical diffusion furnace showing an embodiment of the present invention. As shown in FIG. 1, this furnace core tube for a vertical diffusion furnace has an inner tube portion 122 extending a predetermined distance from the opening 110 through which a boat platform for loading and unloading a boat carries in and out.
Is provided, and the bottom surface 121 of the groove sandwiched between the inner pipe portion 122 and the outer pipe portion 111 has a downward slope toward the exhaust port 120. The end portion of the inner tube portion 122 is formed so as to be inclined toward the exhaust port 120 so that the falling reaction product does not get on, and the edge portion is also inclined toward the outside. Is desirable. Otherwise, it is the same as the conventional example.
【0011】このように底面121が傾斜した溝を設け
ることによって、反応ガスが冷却して生成する反応生成
物は溝にたまって行く。そして、溝の底面121が排気
口120に向かって傾斜しているので、排気口120に
向かって反応生成物が流れ排出される。これらの動作
が、ウェーハにリンを熱拡散している間中実施される。
そして、所定の時間熱拡散を実施後、炉芯管を入炉時の
基底温度500〜800℃に降温し、ボート及びウェー
ハが炉芯管外に取り出され処理終了する。By providing the groove having the inclined bottom surface 121 as described above, the reaction product produced by cooling the reaction gas accumulates in the groove. Since the bottom surface 121 of the groove is inclined toward the exhaust port 120, the reaction product flows toward the exhaust port 120 and is discharged. These operations are performed during the thermal diffusion of phosphorus to the wafer.
After thermal diffusion for a predetermined time, the furnace core tube is cooled to a base temperature of 500 to 800 ° C. at the time of entering the furnace, the boat and the wafer are taken out of the furnace core tube, and the process is completed.
【0012】図2(a)および(b)は本発明の他の実
施例を示す縦型拡散炉用炉芯管の底部の縦断面図および
横断面図である。この縦型拡散炉用炉芯管は、図2に示
すように、排気口120に対向する外管部111の位置
に窒素を導入するN2 ガス導入口112を設けている。
それ以外は前述の実施例と同じである。FIGS. 2 (a) and 2 (b) are a longitudinal sectional view and a lateral sectional view of the bottom portion of a furnace core tube for a vertical diffusion furnace showing another embodiment of the present invention. As shown in FIG. 2, the furnace core tube for a vertical diffusion furnace is provided with an N 2 gas introduction port 112 for introducing nitrogen at a position of the outer pipe portion 111 facing the exhaust port 120.
Other than that is the same as the above-mentioned embodiment.
【0013】なお、このN2 ガス導入口112の炉芯管
のボート入出炉方向に対する角度は、底面121と同じ
角度になっており、N2 ガス導入口222より導入され
たN2 ガスは、溝にたまった反応生成物を排気口220
に押し流す働きをする。[0013] The angle for the boat and out furnace direction of the furnace core tube of the N 2 gas inlet 112 is at the same angle as the bottom surface 121, N 2 gas introduced from the N 2 gas inlet 222, Exhaust port 220 for reaction products accumulated in the groove
Works to wash away.
【0014】したがって、この実施例は、溝にたまった
反応生成物をN2 ガスによって排気口120に向かって
押し流すことから、反応生成物の排出能力が前述の実施
例に比べ高くなるという利点がある。勿論、N2 ガス導
入口222より導入されるガスは、N2 ガスに特に限定
する必要はなく、Arガス等の不活性ガスでも可能であ
る。Therefore, in this embodiment, since the reaction product accumulated in the groove is pushed by the N 2 gas toward the exhaust port 120, the discharge capacity of the reaction product is higher than that of the above-mentioned embodiments. is there. Of course, the gas introduced through the N 2 gas inlet 222 is not limited to N 2 gas, and may be an inert gas such as Ar gas.
【0015】[0015]
【発明の効果】以上説明したように本発明は、開口部1
10から奥側に所定の寸方だけ伸びる内管部を設け、こ
の内管部と外管部111と挟まれてなる溝の底面を排気
口に向けて下り勾配をもたせることによって、縦型拡散
炉の炉芯管炉口部の内壁に反応ガスの冷却によって生じ
た反応生成物が該溝内に落込み、該溝に直結した排気口
から前記反応生成物を排出することができる。従って、
ボート入出炉時の前記反応生成物による炉芯管内以外の
装置内への汚染と腐食を防止し、かつ、ボート出炉時の
ボート及びウェーハ自体の熱による前記反応生成物が再
気化しウェーハを再拡散するという異常拡散を防止する
という効果がある。As described above, according to the present invention, the opening 1
A vertical diffusion is provided by providing an inner pipe portion extending from the inner side of the inner pipe portion 10 by a predetermined dimension, and providing a bottom slope of a groove sandwiched between the inner pipe portion and the outer pipe portion 111 toward the exhaust port. The reaction product produced by cooling the reaction gas on the inner wall of the furnace core tube of the furnace falls into the groove, and the reaction product can be discharged from the exhaust port directly connected to the groove. Therefore,
Prevents contamination and corrosion of equipment other than the furnace core tube by the reaction product at the time of boat ingress / egress, and re-evaporates the wafer by revaporizing the reaction product due to heat of the boat and the wafer itself at the time of evacuation of the boat. This has the effect of preventing abnormal diffusion of diffusion.
【図1】本発明の一実施例を示す縦型拡散炉用炉芯管の
底部の縦断面図および横断面図である。FIG. 1 is a vertical sectional view and a horizontal sectional view of a bottom portion of a furnace core tube for a vertical diffusion furnace showing an embodiment of the present invention.
【図2】本発明の他の実施例を示す縦型拡散炉用炉芯管
の底部の縦断面図および横断面図である。FIG. 2 is a vertical sectional view and a horizontal sectional view of a bottom portion of a furnace core tube for a vertical diffusion furnace showing another embodiment of the present invention.
【図3】従来の一例を示す縦型拡散炉の断面図およびA
部拡大図である。FIG. 3 is a sectional view of a vertical diffusion furnace showing a conventional example and FIG.
FIG.
110 開口部 111 外管部 112 N2 ガス導入口 120,320 排気口 121 底面 122 内管部 311 炉芯管 312 ウェーハ 313 ボート 314 駆動部 315 ボート架台 316 ヒーター 317 炉芯管押え 318 反応ガス導入口 319 反応ガス配管110 Opening 111 Outer Pipe 112 N 2 Gas Inlet 120,320 Exhaust Outlet 121 Bottom 122 Inner Pipe 311 Furnace Core Tube 312 Wafer 313 Boat 314 Drive 315 Boat Mount 316 Heater 317 Furnace Core Hold 318 Reactant Gas Inlet 319 Reaction gas piping
Claims (2)
数枚を搭載するボートが搬出入する開口部を下端に有す
るとともにガス導入口を上端側にガス排気口を下端側に
備える縦型拡散炉用炉芯管において、前記開口部から上
側に所定の寸方だけ伸びる内管部を設け、この内管部と
外管部と挟まれてなる溝の底面を前記ガス排気口に向け
て下り勾配をもたせ該ガス排気口と前記溝とを連ねるこ
とを特徴とする縦型拡散炉用炉芯管。1. A vertical type having an opening at the lower end for arranging a heater on the outer periphery and carrying in and out a boat mounting a plurality of semiconductor substrates, and having a gas inlet at the upper end and a gas outlet at the lower end. In the core tube for the diffusion furnace, an inner tube portion extending upward from the opening by a predetermined dimension is provided, and the bottom surface of the groove sandwiched between the inner tube portion and the outer tube portion is directed toward the gas exhaust port. A furnace core tube for a vertical diffusion furnace, which has a downward slope and connects the gas exhaust port and the groove.
不活性ガス導入口を備えることを特徴とする請求項1記
載の縦型拡散炉用炉芯管。2. The furnace core tube for a vertical diffusion furnace according to claim 1, further comprising an inert gas inlet for flowing an inert gas along the gradient of the groove.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05221584A JP3130710B2 (en) | 1993-09-07 | 1993-09-07 | Furnace tube for vertical diffusion furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05221584A JP3130710B2 (en) | 1993-09-07 | 1993-09-07 | Furnace tube for vertical diffusion furnace |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0778780A true JPH0778780A (en) | 1995-03-20 |
JP3130710B2 JP3130710B2 (en) | 2001-01-31 |
Family
ID=16769038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05221584A Expired - Fee Related JP3130710B2 (en) | 1993-09-07 | 1993-09-07 | Furnace tube for vertical diffusion furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3130710B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8851886B2 (en) | 2008-02-01 | 2014-10-07 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
-
1993
- 1993-09-07 JP JP05221584A patent/JP3130710B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8851886B2 (en) | 2008-02-01 | 2014-10-07 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP3130710B2 (en) | 2001-01-31 |
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