JPH0774105A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To improve the safety of workers by installing a heat exhausting system in a semiconductor manufacturing device and by sucking and exhausting hot air and decreasing the hot air near the place where reacted products adhere. CONSTITUTION:The temperature of a reaction chamber 1 is dropper by exhausting the heat of the reaction chamber 1 with a heat exhausting means 12 from a hole 13 bored near the chamber 4 of the reaction chamber 1. Temperature near a gases introducing pipe by exhausting heat generated from a heat source 3 with the heat exhausting means 12. Installing a cooling device 21 in the heat exhausting measure 12 that consistes of a decompression line, gases are cooled. By adding protective material 22 around the pipes of the heat exhausting means 12, the pipes are protected from the heat. Installing a pump means 20 in the heat exhausting means 12, decompression can be done.

Description

Detailed Description of the Invention

[0001]

[Table of Contents] The present invention will be described in the following order. Industrial Application Conventional Technology (FIGS. 6 to 8) Problems to be Solved by the Invention Means for Solving the Problems (FIGS. 1 to 3 and 6 to 8) Operation (FIGS. 1 to 3) Examples (1) First Example (FIGS. 1 and 6) (2) Second Example (FIGS. 2 and 7) (3) Third Example (FIGS. 3, 4, and 8) (4) Other Embodiments (FIGS. 1 and 5)

[0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
For example, it is suitable for application to a CVD (Chemical Vapor Deposition) apparatus.

[0003]

2. Description of the Related Art In a manufacturing process of an integrated circuit device, a thin film forming process is provided as a wafer processing process. 2. Description of the Related Art Conventionally, in a thin film forming apparatus, there is a thermal CVD apparatus or the like for forming a thin film on a wafer by causing a raw material gas to be uniformly sprayed on the surface of a wafer to cause a chemical reaction by heating with a heating device such as a heater.

When forming a thin film, for example, in a low-pressure CVD apparatus in which the reaction furnace is kept in a reduced pressure state, the gas consisting of the elements constituting the thin-film material inserted in the reaction furnace is heated by a heater or the like. A chemical reaction occurs on the wafer to form a thin film. As shown in FIGS. 6 and 7, in the reaction furnaces 1 and 2, unreacted gas causes a chemical reaction in the vicinity of the flange 5 of the chamber 4 of the heater source 3, and the reactant 6 adheres to the flange 5. Further, as shown in FIG. 8, in an atmospheric pressure CVD apparatus in which a gas is blown from an injector 8 which is a tip portion of a gas blowing tube to a wafer carried by a belt-shaped susceptor 7 to heat the wafer by a heater source 3 to form a thin film. The reactant 6 adheres to the gas ejector 8 as in the low pressure CVD apparatus.

Since FIG. 6 is a vertical type low pressure CVD apparatus, hot air always flows below the reaction furnace 1 in which the flange 5 to which the reactant 6 is attached is disposed, so that when the worker removes the reactant 6. , Very hot and dangerous. Figure 7 is a horizontal low pressure CVD
Since the device is a device, hot air always flows in the lateral direction of the reaction furnace 2 in which the flange 5 to which the reactant 6 is attached is disposed, and therefore, when the operator removes the reactant 6, it is very hot and dangerous.
For this reason, the operator regularly turns off the heater to remove the reactant 6. Further, since FIG. 8 is an atmospheric pressure CVD apparatus, it is very hot due to the hot air from the heater source 3, but the worker removes the reactant 6 adhering to the injector 8 while enduring the heat as it is.

[0006]

[Problems to be Solved by the Invention] However, the heater source is 5
Due to the high temperature of around 00 to 700 degrees, there is a problem that it takes considerable danger for an operator to remove the reactant attached to the inside of each device. In addition, when the worker periodically turns off the heater to remove the reactant attached to the inside of each device, cooling and heating are performed before and after removing the reactant, so the waiting time until the thin film formation is restarted. However, there is a problem with poor efficiency.

The present invention has been made in consideration of the above points, and an object thereof is to propose a semiconductor manufacturing apparatus capable of easily and safely removing a reaction product attached to a flange in a reaction furnace.

[0008]

In order to solve such a problem, in the present invention, reaction chambers 1 and 2 having a heat source 3 are provided.
And a gas introduction pipe for supplying a source gas to the surface of the wafer placed in the reaction chambers 1 and 2, and a decompression for exhausting the reaction chambers 1 and 2 and depressurizing the reaction chambers 1 and 2 during thin film formation. Means 1
1 and heat exhausting means 12 and 31 for discharging heat in the reaction chambers 1 and 2 through pipes from holes 13, 32A and 32B formed in the vicinity of the chamber 4 of the reaction chambers 1 and 2 during cleaning.
And to be provided.

Further, in the present invention, the reaction chamber having the heat source 3 and kept at atmospheric pressure, the gas introduction pipe 8 for supplying the source gas to the wafer surface placed in the reaction chamber, and The heat exhausting means 12 and 41 for exhausting the heat generated by the heating section 44 of the reaction chamber are provided.

[0010]

The heat exhausting means 12 and 31 are discharged from the holes 13, 32A and 32B formed near the chamber 4 of the reaction chambers 1 and 2, respectively.
Thus, the temperature in the reaction chambers 1 and 2 can be lowered by discharging the heat in the reaction chambers 1 and 2. Further, the heat generated by the heat source 3 is discharged by the heat exhausting means 12 and 41, so that the temperature in the vicinity of the gas introduction pipe 8 can be lowered.

Here, the heat exhaust means 12 consisting of a decompression line
It is possible to cool the gas by disposing the cooling device 21 in the and 31. Instead of this, the protection member 2 is provided around the pipes of the heat exhausting means 12 and 31 which are decompression lines.
By arranging 2, the pipe can be protected from heat. The pressure can be reduced by disposing the pump means 20 in the heat exhaust means 12 and 31.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

(1) First Embodiment In FIG. 1 in which parts corresponding to those in FIG. 6 are designated by the same reference numerals, 10 indicates a vertical low pressure CVD apparatus as a whole, including a reaction furnace 1, an exhaust system 11 and a heat generator. It consists of an exhaust system 12.

In the reaction furnace 1, an exhaust port 13 is bored in the flange 5 and a pipe is arranged to reduce the pressure inside the furnace.

As the exhaust system 11, a pipe extends from the exhaust port 13 to the outside of the reaction furnace 1. The pipe is provided with an on-off valve V1 for switching and controlling the flow of hot air in the order closer to the exhaust port 13, an exhaust system unit 14 for lowering the atmospheric pressure, and an exhaust gas treatment device 15 for exhaust gas treatment of gas.

The on-off valve V1 is configured to control switching of the flow of hot air from the inside of the reaction furnace 1 by opening and closing the valve. The exhaust system unit 14 is provided with a vacuum pump 16 for lowering the atmospheric pressure inside the reaction furnace 1. The exhaust gas treatment device 15 includes a vacuum pump 16 in the exhaust system unit 14.
In order to prevent pollution problems when taking in and discharging the gas through the exhaust gas, the taken-in gas is treated as exhaust gas.

The heat exhaust system 12 includes an adjusting unit 12A for adjusting the flow of hot air inside the pipe and the exhaust system 1.
1 is connected to the exhaust port 13 and the opening / closing valve V1 from a pipe, and is connected to the exhaust gas processing device 15 by a delivery unit 12B.

The adjusting unit 12A includes a vacuum sensor 17 for measuring the pressure inside the pipe, a pressure controller 18 for controlling the pressure based on data, a flow rate controller 19 for adjusting the gas delivery amount, and a depressurization generator 20 for pushing out the gas. I'm running.

The vacuum sensor 17 is arranged at the tip of the pipe branched from the pipe between the pipe of the exhaust system 11 and the on-off valve V2 for switching and controlling the flow of the hot air to measure the pressure of the hot air in the pipe.

The pressure control device 18 inputs the pressure signal S1 measured by the vacuum sensor 17 in order to determine the amount of nitrogen gas to be delivered into the pipe depending on the magnitude of the pressure, and the obtained pressure value S1 The control signal S2 is output by comparing with a reference value.

The flow rate adjuster 19 adjusts the delivery amount of nitrogen gas based on the control signal S2 output by the pressure control device 18, and delivers the nitrogen gas to the reduced pressure generator 20 composed of a pump. ing. In addition, the reduced pressure generator 20
Is configured to send nitrogen gas, which is a rare gas, to the pipe in order to forcibly push out the hot air flowing out by the opening / closing valve V2.

The delivery section 12B includes an on-off valve V2 for adjusting the flow of gas, an electronic refrigerant device 21 for cooling the gas, a heat insulating material 22 for protecting the piping from heat, and the exhaust gas treatment apparatus 1.
It is composed of a fan 23 for feeding the gas to 5.

The electronic refrigerant unit 21 is arranged between the decompression generator 20 and the exhaust gas treatment device 15 so as to cool the hot air mixed with the nitrogen gas forcedly pushed out by the decompression generator 20 and treat the exhaust gas. Has been done. The heat insulating material 22 is
It is arranged around the piping of the thermal exhaust system 12 to protect the piping from heat.

In the above structure, when forming a thin film in the reaction furnace 1, it is not necessary to reduce the hot air in the reaction furnace 1, so that the on-off valve V2 of the delivery part 12B of the heat exhaust system 12 does not flow gas. Close the valve.

The gas sent from the exhaust port 13 to the exhaust system section 14 via the on-off valve V1 is taken into the vacuum pump 16 in order to reduce the atmospheric pressure. The gas that has passed through the vacuum pump 16 is sent to the exhaust gas treatment device 15 in order to prevent pollution problems when exhausted, and is exhausted after the gas has been exhausted.

When removing the reactant 6 adhering to the reaction furnace 1, the on-off valve V1 is closed and the on-off valve V2 is opened in order to reduce the hot air of the reaction furnace 1 so that an operator does not have to be exposed to the hot air.

The hot air flowing out to the heat exhaust system 12 passes through a pipe which is divided into two branches, and an adjusting portion 12A arranged on one side.
The vacuum sensor 17 measures the pressure value. The measured hot air pressure is the pressure signal S1 for comparison with the reference value.
Is input to the pressure control device 18. Pressure signal S1
Is compared with a reference value in the pressure control device 18, and when the pressure value exceeds the reference value, a control signal S2 for reducing the flow rate of the nitrogen gas is generated. When the pressure value does not exceed the reference value, The control signal S2 for increasing the flow rate is input to the flow rate adjuster 19. The flow rate adjuster 19 adjusts the delivery amount of the nitrogen gas according to the input control signal S2, and delivers it to the decompression generator 20.

The on-off valve V of the delivery section 12B arranged on the other side
Flow hot air by opening 2. A regulated amount of nitrogen gas is delivered from the decompression generator 20, and hot air containing nitrogen gas is forcibly delivered. The hot air forcedly sent is cooled by the electronic refrigerant device 21. The cooled hot air is
To treat the exhaust gas, it is fed into the device by a fan 23 arranged at the inlet of the exhaust gas treatment device 15. The exhaust gas treatment device 15 treats the gas taken in by the fan 23 as an exhaust gas and discharges it.

According to the above structure, in the vertical decompression CVD apparatus 10, the operator installs the reaction product 6 attached to the reaction furnace 1 by disposing the thermal exhaust system 12 including the adjusting section 12A and the sending section 12B. Since a large amount of hot air in the reaction furnace 1 is sucked and reduced during the removal, it is not harsh and dangerous for the worker who removes it while enduring the heat.

(2) Second Embodiment FIG. 2 showing the parts corresponding to those in FIGS. 1 and 7 with the same reference numerals.
In FIG. 3, reference numeral 30 generally indicates a horizontal decompression CVD apparatus, which has the same configuration except that it has the reaction furnace 2 and a heat exhaust system 31.

Since the reaction furnace 2 is horizontal unlike the vertical reaction furnace 1 shown in FIG. 1, the flanges 5 are arranged at four positions in the upper and lower directions. Outer exhaust ports 32A and 32B are formed in each of the lower flanges 5 in order to remove hot air, and pipes of the delivery portion 31B of the thermal exhaust system 31 are respectively provided therein. Each pipe is provided with on-off valves V2A and V2B for switching and controlling the flow of hot air. The on-off valves V2A and V2B are designed to open in order to discharge hot air so that an operator does not have to take hot air when removing the reactant 6 attached to the reaction furnace 2. Each pipe is connected to one pipe after the on-off valves V2A and V2B.

The heat exhaust system 31 comprises an adjusting section 31A and a sending section 31B having the same structure as the adjusting section 12A. An exhaust port 32C is provided in the lid of the reaction furnace 2, and an exhaust system 11 is arranged so that the gas in the reaction furnace 2 flows out by opening the opening / closing valve V1 when forming a thin film.

In the above structure, when forming a thin film,
By opening the open / close valve V1, gas flows out from the exhaust port 32C.

When removing the reactant 6 adhering to the reaction furnace 2, the on-off valves V2A and V2B are opened to reduce the hot air of the reaction furnace 2 so that an operator does not have to be exposed to the hot air and the exhaust port 32A is opened. And hot air flows out from 32B. The hot air flowing out from the exhaust ports 32A and 32B is mixed by using one pipe, and then the pressure is measured by the vacuum sensor 17.

According to the above construction, exhaust ports 32A and 32B are formed in each flange 5 below the reaction furnace 2 of the horizontal decompression CVD apparatus 30, and the heat exhaust system 31 including the adjusting section 31A and the sending section 31B is provided. Even if it is arranged, the same effect as that of the first embodiment can be obtained.

(3) Third Embodiment FIG. 3 in which parts corresponding to those in FIGS. 1 and 8 are designated by the same reference numerals.
In the figure, 40 indicates an atmospheric pressure CVD apparatus as a whole and has the same configuration except that it has a heat exhausting section 41.

The heat exhaust unit 41 comprises an exhaust pipe 43 provided with a slit 42 for removing hot air generated from the heater source 3, as shown in FIG. The exhaust pipes 43 are arranged on both sides in the longitudinal direction of the heater portion 44 holding the heater source 3 so as not to disturb the thin film formation. The exhaust pipe 43 is connected to the thermal exhaust system 12.

In the above structure, when forming a thin film,
Since it is not necessary to reduce the hot air, the open / close valve V2 is closed. When the reactant 6 attached to the injector 8 is removed, the hot air generated on the upper surface of the heater portion 44 is sucked by the slit 42 by opening the open / close valve V2 so that the operator does not have to take the hot air, and the heat is exhausted through the exhaust pipe 43. The hot air is exhausted by the exhaust system 12.

According to the above configuration, the atmospheric pressure CVD device 40
Exhaust pipes 43 provided with slits 42 are arranged on both sides of the heater part 44 in the longitudinal direction, and the adjusting part 12A and the sending part 12B are provided.
The same effect as in the first embodiment can be obtained by connecting the heat exhaust system 12 including

(4) Other Embodiments In the above-mentioned first, second and third embodiments, description will be given of the one in which the electronic refrigerant unit 21 for cooling the hot air is arranged in the heat exhaust systems 12 and 31. However, the present invention is not limited to this, and cooling water may be provided instead of the electronic refrigerant device 21.

Further, in the above-mentioned first, second and third embodiments, the one in which nitrogen gas is used for reducing the pressure in the heat exhaust systems 12 and 31 has been described, but the present invention is not limited to this, and is rare. Any gas other than nitrogen gas may be used as long as it is a gas.

Further, in the above-mentioned first, second and third embodiments, the ballast type in which the amount of nitrogen gas blown into the pipes of the delivery parts 12B and 31B is adjusted by the adjusting parts 12A and 31A has been described. The present invention is not limited to this, but the same effect can be obtained by a butterfly system in which the amount of nitrogen gas blown into the pipes of the delivery sections 12B and 31B is fixed and the flow rate is adjusted by a butterfly valve. Here, the butterfly valve is arranged between the reduced pressure generator 20 and the electronic refrigerant device 21. A vacuum sensor 17 serving as an adjusting unit is provided between the butterfly valve and the electronic refrigerant device 21, a pressure signal is sent to the pressure control device by the detection of the vacuum sensor, and a control signal from the pressure control device is sent to the motor to cause the butterfly. The configuration is such that the opening and closing of the valve is adjusted.

Further, in the above-mentioned first, second and third embodiments, the one using the reduced pressure generator 20 has been described, but the present invention is not limited to this, and if nitrogen gas is used, nitrogen gas is used. After being mixed with hot air
A small vacuum pump may be arranged at a position until it is cooled by.

In the first embodiment described above, one exhaust port 13 is bored in the reaction furnace 1 to form a thin film and to remove the reactant 6 attached to the reaction furnace 1. However, the present invention is not limited to this, and two exhaust ports may be provided in the reaction furnace 1 to be used separately for thin film formation and thermal exhaust system. At this time, the exhaust port for the heat exhaust system is formed in the flange 5.

Further, in the above-described second embodiment, the piping from the exhaust port 32A through the on-off valve V2A and the exhaust port 3
Although the vacuum sensor 17 is provided at a portion after the pipes connected from 2B to the on-off valve V2B are combined with each other, the present invention is not limited to this, and the exhaust port 32A and the on-off valve V2A are not limited to this. Alternatively, each vacuum sensor or a common vacuum sensor may be arranged between the exhaust port 32B and the on-off valve V2B.

Further, in the above-mentioned third embodiment, the heat exhaust portion 41 in which the exhaust pipes 43 are arranged on both sides of the heater portion 44 in the longitudinal direction has been described, but the present invention is not limited to this, and FIG.
The same effect can be obtained even if the heat is exhausted by disposing the heater portion 44 inside the exhaust box 45 as shown in FIG.

Further, although the CVD apparatus has been described in the above embodiment, the present invention is not limited to this and can be applied to a diffusion furnace or the like.

[0048]

As described above, according to the present invention, the hot air exhausting system in the semiconductor manufacturing apparatus is used to remove the reactants adhering to the inside of the apparatus. By sucking a large amount of hot air among them and exhausting it, the hot air in the vicinity of the reactant attachment can be reduced. Furthermore, it is possible to obtain a semiconductor manufacturing apparatus that can increase the safety of workers by reducing hot air.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a vertical low pressure CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing a horizontal low pressure CVD apparatus according to a second embodiment.

FIG. 3 is a schematic diagram showing an atmospheric pressure CVD apparatus according to a third embodiment.

FIG. 4 is a perspective view showing a heat exhaust unit of a third embodiment.

FIG. 5 is a perspective view showing another heat exhaust unit.

FIG. 6 is a schematic diagram for explaining a conventional vertical low pressure CVD apparatus.

FIG. 7 is a schematic diagram for explaining a conventional horizontal low pressure CVD apparatus.

FIG. 8 is a schematic diagram for explaining a conventional atmospheric pressure CVD apparatus.

[Explanation of symbols]

1, 2 ... Reactor, 10 ... Vertical low pressure CVD apparatus, 1
1, 31 ... Thermal exhaust system, 14 ... Exhaust gas treatment device, 15 ... Vacuum pump, 16 ... Vacuum sensor, 17 ...
... Pressure control device, 18 ... Flow rate regulator, 19 ... Decompression generator, 20 ... Electronic refrigerant device, 21 ... Insulating material, 30 ...
Horizontal low pressure CVD apparatus, 41 ... Normal pressure CVD apparatus, 41 ...
… Heat exhaust part, V1, V2 …… Open / close valve.

Claims (7)

[Claims] 1. A reaction chamber having a heat source, a gas introduction pipe for supplying a raw material gas to the surface of a wafer placed in the reaction chamber, and when the thin film is formed, the reaction chamber is evacuated and the reaction chamber is depressurized. A semiconductor manufacturing apparatus comprising: a depressurizing unit; and a heat exhausting unit that exhausts heat in the reaction chamber through a pipe from a hole formed near the chamber of the reaction chamber during cleaning. 2. A reaction chamber having a heat source and kept at atmospheric pressure, a gas introduction pipe for supplying a raw material gas to the surface of a wafer placed in the reaction chamber, and heating the reaction chamber during cleaning. A semiconductor manufacturing apparatus comprising: a heat exhausting unit for exhausting heat generated by the unit. 3. The heat exhausting means is a decompression line and is provided with a cooling device for cooling the gas.
Alternatively, the semiconductor manufacturing apparatus according to claim 2. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the heat exhausting means is a decompression line, and a protective member for protecting the pipe from heat is arranged around the pipe. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the heat exhausting means is provided with pumping means for reducing pressure. 6. The method according to claim 1, wherein the flow rate is adjusted by introducing a rare gas for adjusting the flow rate into the heat exhausting means to generate a negative pressure. 4. The semiconductor manufacturing apparatus according to claim 4 or claim 5. 7. The method according to claim 1, wherein a certain amount of rare gas is introduced into the heat exhaust means for adjusting the flow rate to generate a negative pressure, and the flow rate is adjusted by a butterfly valve. The semiconductor manufacturing apparatus according to claim 2, claim 3, claim 4, or claim 5.