JPH0770757A - Thin film forming device and formation of thin film using the same - Google Patents
Thin film forming device and formation of thin film using the sameInfo
- Publication number
- JPH0770757A JPH0770757A JP21751793A JP21751793A JPH0770757A JP H0770757 A JPH0770757 A JP H0770757A JP 21751793 A JP21751793 A JP 21751793A JP 21751793 A JP21751793 A JP 21751793A JP H0770757 A JPH0770757 A JP H0770757A
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- Prior art keywords
- substrate
- thin film
- film forming
- formation
- mass
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体、誘電体、圧電
体及び光学材料などを用いた機能性薄膜の成膜に用いる
薄膜形成装置および薄膜形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus and a thin film forming method used for forming a functional thin film using a semiconductor, a dielectric, a piezoelectric material, an optical material and the like.
【０００２】[0002]
【従来の技術】一般に、基板上に機能性薄膜の成膜を行
う方法としては、ＣＶＤ法やＰＶＤ法が知られており、
ＣＶＤ法は、揮発性の金属ハロゲン化物や金属の有機化
合物などを、熱した基板上で熱分解や酸化反応などによ
って、薄膜組成物を堆積させて薄膜を形成するものであ
り、ＰＶＤ法は、蒸着、スパッタ等を用い基板上に薄膜
を形成するものである。2. Description of the Related Art Generally, a CVD method and a PVD method are known as methods for forming a functional thin film on a substrate.
The CVD method forms a thin film by depositing a thin film composition on a heated substrate by thermal decomposition or oxidation reaction of a volatile metal halide or a metal organic compound, and the PVD method A thin film is formed on a substrate by using vapor deposition, sputtering or the like.
【０００３】このうち、ＣＶＤ法による薄膜形成装置
は、反応槽内に設置されたヒータ上に基板を保持するた
めの基板ホルダーを設置し、基板ホルダー上に、基板に
原料ガスを供給するためのガス導入管を設置して構成さ
れており、その薄膜形成方法は、ヒータにより加熱され
た基板上に、揮発性化合物のソース原料を気化しＡｒ、
Ｈ2 、Ｎ2 などのキャリアガスと混合した原料ガスを、
なるべく均一に一定時間供給し、基板表面で分解、還
元、酸化、置換などの化学反応を起こさせ、基板上に均
一な薄膜を形成するものである。そして、成膜される薄
膜の膜厚は、原料ガスを供給している成膜時間により管
理されている。また、ＰＶＤ法による蒸着装置又はスパ
ッタ装置においても、膜厚は成膜時間により管理されて
いる。Among them, the thin film forming apparatus by the CVD method has a substrate holder for holding a substrate on a heater installed in a reaction tank, and supplies a source gas to the substrate on the substrate holder. It is configured by installing a gas introduction pipe, and its thin film forming method is to vaporize a source material of a volatile compound onto a substrate heated by a heater,
A raw material gas mixed with a carrier gas such as H 2 or N 2 ,
It is supplied as uniformly as possible for a certain period of time to cause chemical reactions such as decomposition, reduction, oxidation and substitution on the surface of the substrate to form a uniform thin film on the substrate. The film thickness of the formed thin film is controlled by the film formation time during which the source gas is supplied. Further, also in the vapor deposition apparatus or the sputtering apparatus by the PVD method, the film thickness is controlled by the film formation time.
【０００４】[0004]
【発明が解決しようとする課題】ところが、上記従来例
の薄膜形成装置において、ＣＶＤ法によるものは、複雑
な組成系材料の成膜を行う場合、例えば、金属アルコキ
シド等の時間とともに気化特性が変化し易い材料をソー
ス原料に使用するため、単に、成膜時間による管理では
膜厚のバラツキが大きくなっていた。また、ＰＶＤ法に
よるものも、成膜中の圧力及び温度の微妙な変化により
成膜速度が変化するため、成膜時間による管理では膜厚
のバラツキが大きくなっていた。However, in the thin film forming apparatus of the above-mentioned conventional example, when the CVD method is used to form a film of a complex composition material, for example, the vaporization characteristics of a metal alkoxide change with time. Since a material that is easy to be used is used as the source material, the variation in the film thickness becomes large simply by controlling the film formation time. Further, in the case of the PVD method, the film formation rate changes due to a slight change in the pressure and temperature during the film formation, so that the variation in the film thickness becomes large in the control by the film formation time.
【０００５】その結果、基板上に均一な膜厚と安定した
膜質の薄膜が形成できないため、薄膜の組成制御を十分
に行うことができず、高機能薄膜素子の安定した供給が
困難であった。As a result, since a thin film having a uniform film thickness and a stable film quality cannot be formed on the substrate, the composition of the thin film cannot be sufficiently controlled, and it is difficult to stably supply the high-performance thin film element. .
【０００６】また、成膜した薄膜の膜厚を比較的簡便に
求める方法として、成膜前後の基板４の質量変化から膜
厚を求める方法が用いられているが、この場合、反応槽
１から基板４を取り出して質量を測定する際に、基板４
に水分等の吸着物が付着し、正確な質量を測定すること
が困難となっていた。そのため、電子顕微鏡等の高価な
装置が必要であった。As a relatively simple method for obtaining the film thickness of the formed thin film, a method for obtaining the film thickness from the mass change of the substrate 4 before and after film formation is used. In this case, the reaction tank 1 is used. When the substrate 4 is taken out and the mass is measured, the substrate 4
Adsorbed substances such as water adhered to the surface, making it difficult to measure the accurate mass. Therefore, an expensive device such as an electron microscope is required.
【０００７】本発明は、このような問題を解消するため
になされたものであり、基板上に均一な成膜を行い、高
機能薄膜素子を安定して供給できる薄膜形成装置および
薄膜形成方法の提供を目的とするものである。The present invention has been made to solve such a problem, and provides a thin film forming apparatus and a thin film forming method capable of forming a uniform film on a substrate and stably supplying a high-performance thin film element. It is intended to be provided.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明においては、基板上に薄膜を形成する薄膜
形成装置において、前記基板の質量変化を電気信号とし
て検出する装置を備えたことを特徴とするものである。In order to achieve the above object, the present invention comprises a thin film forming apparatus for forming a thin film on a substrate, which is provided with a device for detecting a mass change of the substrate as an electric signal. It is characterized by that.
【０００９】また、基板の質量変化を電気信号として検
出する装置を備えた薄膜形成装置を用いて、成膜中に前
記基板の質量変化を測定し、該質量変化に応じて成膜時
間をコントロールし、基板上に薄膜を形成することを特
徴とするものである。Further, a thin film forming apparatus equipped with a device for detecting a mass change of the substrate as an electric signal is used to measure the mass change of the substrate during film formation, and the film formation time is controlled according to the mass change. Then, a thin film is formed on the substrate.
【００１０】[0010]
【作用】上記の構成によれば、成膜中に、基板の質量変
化を測定することにより膜の質量を検知することができ
るため、成膜量を精密に管理でき、膜厚のバラツキが少
なくなる。According to the above structure, since the mass of the film can be detected by measuring the mass change of the substrate during the film formation, the amount of film formation can be precisely controlled and the variation of the film thickness is small. Become.
【００１１】[0011]
【実施例】以下、本発明による薄膜形成装置および薄膜
形成方法の実施例を図面を用いて説明する。図１にＣＶ
Ｄ法による薄膜形成装置を示す。図１において、１は反
応槽であり、反応槽１内の底部には基板ホルダー２と連
結した電子式の精密天秤３が設置され、基板ホルダー２
の上部には、試料として基板４が設置されている。ま
た、基板ホルダー２の下部には、基板４を加熱するため
の基板ヒーター５が基板ホルダー２と間隔を開けて設置
されている。さらに、反応槽１の外部の自動開閉バルブ
６とつながるガス導入管６が反応槽１内に引込まれると
ともに、ガス導入管６の先端が基板４の上部に基板４と
一定の間隔を設けて設置され、薄膜形成装置８が構成さ
れている。Embodiments of a thin film forming apparatus and a thin film forming method according to the present invention will be described below with reference to the drawings. CV in Figure 1
The thin film forming apparatus by the D method is shown. In FIG. 1, reference numeral 1 is a reaction tank, and an electronic precision balance 3 connected to a substrate holder 2 is installed at the bottom of the reaction tank 1
A substrate 4 is installed as a sample on the upper part of. Further, a substrate heater 5 for heating the substrate 4 is installed below the substrate holder 2 with a space from the substrate holder 2. Further, a gas introducing pipe 6 connected to an automatic opening / closing valve 6 outside the reaction tank 1 is drawn into the reaction tank 1, and a tip of the gas introducing pipe 6 is provided above the substrate 4 with a certain distance from the substrate 4. The thin film forming apparatus 8 is installed.
【００１２】この薄膜形成装置８を用いた薄膜形成方法
は、精密天秤３で基板４の質量変化を測定しながら、基
板ヒーター５により高温に熱せられた基板４の表面に対
して、ガス導入管６の先端からソース原料とキャリアガ
スを混合してなる原料ガスを供給し、基板４の表面で化
学反応を起こさせることにより薄膜を形成し、予め必要
な膜厚より決められた質量変化値に達した時点で、自動
開閉バルブ７を閉じ成膜を完了する。The thin film forming method using this thin film forming apparatus 8 is a gas introduction tube for the surface of the substrate 4 heated to a high temperature by the substrate heater 5 while measuring the mass change of the substrate 4 with the precision balance 3. A raw material gas obtained by mixing a source raw material and a carrier gas is supplied from the tip of 6 to form a thin film by causing a chemical reaction on the surface of the substrate 4, and a mass change value determined in advance from the required film thickness is obtained. When it reaches, the automatic opening / closing valve 7 is closed to complete the film formation.
【００１３】以上の薄膜形成装置および薄膜形成方法に
より、基板４の質量変化を測定し膜の質量を検知しなが
ら成膜できるため、反応槽内で正確な膜厚を知ることが
できるとともに、成膜量の精密な管理が可能となる。ま
た、測定値は、精密天秤３により電気信号として取り出
すことができるため、測定値の取扱いが容易となり、自
動開閉バルブ７が電磁式の場合は、そのコントロールも
行い易い。With the thin film forming apparatus and thin film forming method described above, the film can be formed while measuring the mass change of the substrate 4 and detecting the mass of the film. Therefore, it is possible to know the accurate film thickness in the reaction tank and It enables precise control of the film amount. Further, since the measured value can be taken out as an electric signal by the precision balance 3, it is easy to handle the measured value, and when the automatic opening / closing valve 7 is of an electromagnetic type, it is easy to control it.
【００１４】本発明の効果を確認するために、表１に示
す条件で、従来の、成膜時間の管理により成膜する薄膜
形成装置と、本発明の、基板質量の管理により成膜する
薄膜形成装置を用いて成膜を各３回行い、その膜厚のバ
ラツキを調査した。なお、従来の薄膜形成装置では、成
膜時間を２時間とした。In order to confirm the effect of the present invention, under the conditions shown in Table 1, a conventional thin film forming apparatus for forming a film by controlling the film forming time, and a thin film forming film according to the present invention for managing a substrate mass. Film formation was performed three times using the forming apparatus, and variations in the film thickness were investigated. In the conventional thin film forming apparatus, the film forming time was set to 2 hours.
【００１５】[0015]
【表１】 [Table 1]
【００１６】この結果、膜厚のバラツキは、従来の薄膜
形成装置では±１４％であったものが、本発明の薄膜形
成装置では±５％になり、本発明の効果を確認すること
ができた。As a result, the variation in film thickness was ± 14% in the conventional thin film forming apparatus, but was ± 5% in the thin film forming apparatus of the present invention, and the effect of the present invention can be confirmed. It was
【００１７】なお、本発明による、成膜中に基板の質量
変化を測定し膜の質量及び膜厚を求める機能は、ＣＶＤ
装置以外に、蒸着、スパッタ及びレーザーアブレーショ
ン等によるＰＶＤ装置にも用いることが可能である。According to the present invention, the function of measuring the mass change of the substrate during film formation and determining the film mass and film thickness is the CVD.
Besides the apparatus, it can be used for a PVD apparatus by vapor deposition, sputtering, laser ablation, or the like.
【００１８】[0018]
【発明の効果】以上説明したように、本発明にかかる薄
膜形成装置および薄膜形成方法によれば、成膜中に正確
な膜厚を容易に検知することができ、成膜量の精密な管
理が可能となり、膜厚のバラツキが少なくなる。その結
果、基板上に均一な膜厚と安定した膜質の薄膜が形成で
き、薄膜の組成制御を厳密に行うことができ、高機能薄
膜素子の安定した供給が可能となる。また、簡便な装置
で正確な膜厚を求めることができるため、電子顕微鏡等
の高価な装置を必要としない。As described above, according to the thin film forming apparatus and the thin film forming method of the present invention, it is possible to easily detect an accurate film thickness during film formation, and to precisely control the film formation amount. It is possible to reduce the variation in film thickness. As a result, a thin film having a uniform film thickness and stable film quality can be formed on the substrate, the composition of the thin film can be strictly controlled, and stable supply of a high-performance thin film element can be achieved. Moreover, since an accurate film thickness can be obtained with a simple device, an expensive device such as an electron microscope is not required.
【図１】本発明の実施例による薄膜形成装置の概念図で
ある。FIG. 1 is a conceptual diagram of a thin film forming apparatus according to an embodiment of the present invention.
１ 反応槽 ２ 基板ホルダー ３ 精密天秤 ４ 基板 ５ 基板ヒーター ６ ガス導入管 ７ 自動開閉バルブ ８ 薄膜形成装置 1 Reactor 2 Substrate holder 3 Precision balance 4 Substrate 5 Substrate heater 6 Gas introduction pipe 7 Automatic opening / closing valve 8 Thin film forming device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 橘高 敏彦 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 (72)発明者 伴野 国三郎 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshihiko Tachibana, 2-10-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd.
Claims (2)
いて、前記基板の質量変化を電気信号として検出する装
置を備えたことを特徴とする薄膜形成装置。1. A thin film forming apparatus for forming a thin film on a substrate, comprising a device for detecting a mass change of the substrate as an electric signal.
装置を備えた薄膜形成装置を用いて、成膜中に前記基板
の質量変化を測定し、該質量変化に応じて成膜時間をコ
ントロールし、基板上に薄膜を形成する薄膜形成方法。2. A thin film forming apparatus equipped with a device for detecting a change in mass of a substrate as an electric signal is used to measure a change in mass of the substrate during film formation, and a film formation time is controlled according to the change in mass. And then forming a thin film on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21751793A JPH0770757A (en) | 1993-09-01 | 1993-09-01 | Thin film forming device and formation of thin film using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21751793A JPH0770757A (en) | 1993-09-01 | 1993-09-01 | Thin film forming device and formation of thin film using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0770757A true JPH0770757A (en) | 1995-03-14 |
Family
ID=16705482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21751793A Pending JPH0770757A (en) | 1993-09-01 | 1993-09-01 | Thin film forming device and formation of thin film using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770757A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013236020A (en) * | 2012-05-10 | 2013-11-21 | Mitsubishi Electric Corp | Solar battery manufacturing apparatus and manufacturing method of solar battery |
-
1993
- 1993-09-01 JP JP21751793A patent/JPH0770757A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013236020A (en) * | 2012-05-10 | 2013-11-21 | Mitsubishi Electric Corp | Solar battery manufacturing apparatus and manufacturing method of solar battery |
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