JPH0770553A - Abrasive fluid and grinding of substrate therewith - Google Patents
Abrasive fluid and grinding of substrate therewithInfo
- Publication number
- JPH0770553A JPH0770553A JP21721093A JP21721093A JPH0770553A JP H0770553 A JPH0770553 A JP H0770553A JP 21721093 A JP21721093 A JP 21721093A JP 21721093 A JP21721093 A JP 21721093A JP H0770553 A JPH0770553 A JP H0770553A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- polishing
- polishing liquid
- aluminum
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガラス基体やセラミッ
クス基体等のアルミニウムを含有する基体の研磨に用い
られる研磨液及びこの研磨液を用いた基体の研磨方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing liquid used for polishing a substrate containing aluminum such as a glass substrate and a ceramic substrate, and a method for polishing a substrate using this polishing liquid.
【０００２】[0002]
【従来の技術】従来、ガラス基体やセラミックス基体等
の表面を平滑にするために、研磨砥粒を含有する研磨液
を利用して基体表面を研磨することが行われている。こ
の方法の問題点として、同じ研磨液を繰り返し使用して
いると、研磨速度が次第に低下することが指摘されてい
る。2. Description of the Related Art Conventionally, in order to make the surface of a glass substrate, a ceramic substrate or the like smooth, the surface of the substrate is polished by using a polishing liquid containing abrasive grains. As a problem of this method, it is pointed out that the polishing rate is gradually reduced when the same polishing liquid is repeatedly used.
【０００３】研磨速度が低下する原因の一つとして、研
磨液中に蓄積された基体成分が研磨砥粒を凝集させ、こ
の凝集物が研磨パッドの目詰まりを発生させることが指
摘されている。特に、研磨液中に蓄積されたアルミニウ
ムは、数十ｐｐｍの濃度で研磨砥粒を凝集させる効果が
あるため、その影響は重大である。It has been pointed out that one of the causes of the decrease in the polishing rate is that the substrate components accumulated in the polishing liquid cause the abrasive grains to agglomerate, and the agglomerates cause clogging of the polishing pad. In particular, aluminum accumulated in the polishing liquid has an effect of aggregating polishing abrasive grains at a concentration of several tens of ppm, so that the influence is significant.
【０００４】上記のようなアルミニウムの凝集効果を抑
制するために、研磨液のｐＨを調整して、強酸性又は強
アルカリ性にする方法が提案されているが、この方法
は、研磨作業の操作性を著しく損ねるため、実用的とは
言い難い。このため、従来においては、研磨液の交換や
研磨パッドのドレッシング処理を頻繁に行うことで、研
磨速度の低下に対処しており、生産性低下の一因をなし
ていた。In order to suppress the above-mentioned aggregating effect of aluminum, a method of adjusting the pH of the polishing liquid to make it strongly acidic or strongly alkaline has been proposed, but this method has the operability of polishing work. It is hard to say that it is practical because it remarkably deteriorates. Therefore, in the past, the replacement of the polishing liquid and the dressing process of the polishing pad were frequently performed to cope with the reduction of the polishing rate, which was one of the causes of the reduction of the productivity.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記従来技
術の問題点に鑑みてなされたものであり、その目的は、
特にアルミニウムを含有するガラス基体やセラミックス
基体等の研磨に用いる研磨液において、初期の研磨速度
を長期にわたって維持できる、新規な研磨液及び研磨方
法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and its object is to:
In particular, it is to provide a novel polishing liquid and a polishing method capable of maintaining an initial polishing rate for a long time in a polishing liquid used for polishing a glass substrate or a ceramic substrate containing aluminum.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、本発明の研磨液は、アルミニウムを含有する基体の
研磨に用いられる研磨液において、アルミニウムと錯体
を形成する有機酸及び／又はキレート剤が含有されてい
ることを特徴とする。また、本発明の研磨方法はアルミ
ニウムを含有する基体を研磨する研磨液に有機酸及び／
又はキレート剤を添加し、研磨液中のアルミニウム鉄分
をマスキングし、基体の研磨速度の低下を改善すること
を特徴とする。To achieve the above object, the polishing liquid of the present invention is an organic acid and / or a chelating agent which forms a complex with aluminum in a polishing liquid used for polishing a substrate containing aluminum. Is contained. Further, the polishing method of the present invention uses a polishing liquid for polishing a substrate containing aluminum with an organic acid and / or
Alternatively, a chelating agent is added to mask the aluminum-iron content in the polishing liquid to improve the reduction in the polishing rate of the substrate.
【０００７】以下、本発明について、更に詳細に説明す
る。本発明に用いる有機酸及び／又はキレート剤は、ア
ルミニウムに対して錯体を形成する能力のあるものを使
用する。具体的には、有機酸として、クエン酸、リンゴ
酸、酒石酸等のオキシカルボン酸類や、蓚酸、フマル
酸、コハク酸、マロン酸などのジカルボン酸類などを好
ましく用いることができ、また、キレート剤として、エ
チレンジアミン四酢酸（ＥＤＴＡ）、シクロヘキサンジ
アミン四酢酸（ＣｙＤＴＡ）、ジエチレントリアミン五
酢酸（ＤＴＰＡ）、トリエチレンテトラミン六酢酸（Ｔ
ＴＨＡ）などを好ましく用いることができる。The present invention will be described in more detail below. The organic acid and / or chelating agent used in the present invention has the ability to form a complex with aluminum. Specifically, as the organic acid, oxycarboxylic acids such as citric acid, malic acid and tartaric acid, and dicarboxylic acids such as oxalic acid, fumaric acid, succinic acid and malonic acid can be preferably used, and as a chelating agent. , Ethylenediaminetetraacetic acid (EDTA), cyclohexanediaminetetraacetic acid (CyDTA), diethylenetriaminepentaacetic acid (DTPA), triethylenetetraminehexaacetic acid (T
THA) and the like can be preferably used.
【０００８】上記有機酸及び／又はキレート剤の添加濃
度は、５ｍＭ以上が好ましく、１０〜２００ｍＭがより
好ましく、２０〜５０ｍＭが最も好ましい。添加濃度が
５ｍＭ以上であれば、本発明の効果が得られるが、１０
ｍＭ以上とすることにより、より確実な効果が得られ
る。また、２００ｍＭを超えると、液の粘性が高くなっ
て操作性が悪くなる傾向がある。The concentration of the organic acid and / or chelating agent added is preferably 5 mM or more, more preferably 10-200 mM, most preferably 20-50 mM. If the added concentration is 5 mM or more, the effect of the present invention can be obtained, but 10
A more reliable effect can be obtained by adjusting the amount to be mM or more. On the other hand, when it exceeds 200 mM, the viscosity of the liquid tends to be high and the operability tends to be poor.
【０００９】また、研磨液に含有される研磨剤の種類
は、特に制限はなく、例えば、酸化セリウム系、ジルコ
ニア系、アルミナ系、ガーネット系等の研磨剤を用いる
ことができる。この他、本発明の研磨液には、通常用い
られる他の成分を添加して使用することができる。The type of abrasive contained in the polishing liquid is not particularly limited, and for example, cerium oxide-based, zirconia-based, alumina-based, garnet-based polishing agents can be used. In addition, other components that are usually used can be added to the polishing liquid of the invention.
【００１０】本発明の研磨液は、いずれのｐＨ域でも使
用可能であるが、操作性の点から、ｐＨ７〜９に調整し
て用いるのが好ましい。The polishing liquid of the present invention can be used in any pH range, but from the viewpoint of operability, it is preferable to adjust the pH to 7-9 before use.
【００１１】本発明の研磨液は、アルミニウム成分を含
有する基体、例えばガラス基体、セラミックス基体、ガ
ラス・セラミックス基体等の研磨に用いられる。The polishing liquid of the present invention is used for polishing a substrate containing an aluminum component, such as a glass substrate, a ceramic substrate, a glass / ceramic substrate and the like.
【００１２】[0012]
【作用】本発明の研磨液は、アルミニウムと錯体を形成
する有機酸及び／又はキレート剤を含有させたことによ
り、研磨速度の低下が防止され、初期の研磨速度を長期
にわたって維持することができる。このような効果が得
られる理由は、上記有機酸及び／又はキレート剤が、研
磨時に発生するアルミニウム等の基体成分をマスキング
するため、研磨砥粒の凝集による研磨パッドの目詰まり
が防止されるためと考えられる。更に、上記有機酸及び
／又はキレート剤には、研磨砥粒の分散性を改善する効
果があると考えられ、このことも研磨速度の低下防止に
寄与していると推測される。The polishing liquid of the present invention contains an organic acid which forms a complex with aluminum and / or a chelating agent, so that the polishing rate is prevented from lowering and the initial polishing rate can be maintained for a long time. . The reason why such an effect is obtained is that the organic acid and / or the chelating agent masks a substrate component such as aluminum generated during polishing, and thus clogging of the polishing pad due to aggregation of polishing abrasive grains is prevented. it is conceivable that. Further, the organic acid and / or the chelating agent is considered to have an effect of improving the dispersibility of the abrasive grains, and it is presumed that this also contributes to the prevention of the decrease in the polishing rate.
【００１３】[0013]
（実施例１）酸化セリウム系研磨剤を含有するガラス研
磨液２５リットルに、クエン酸ナトリウムを２０ｍＭ添
加し、次いでｐＨを約８に調整して、研磨液を得た。こ
の研磨液を使用して、３０×３２ｃｍのガラス板（アル
ミニウム含有率６％）を常法により研磨したところ、５
０枚以上研磨しても、研磨速度は初期速度の９０〜９５
％を保っていた。(Example 1) 20 mM of sodium citrate was added to 25 liters of a glass polishing liquid containing a cerium oxide abrasive, and then the pH was adjusted to about 8 to obtain a polishing liquid. Using this polishing solution, a glass plate of 30 × 32 cm (aluminum content 6%) was polished by an ordinary method,
Even if 0 or more sheets are polished, the polishing rate is 90 to 95% of the initial rate.
% Was kept.
【００１４】なお、比較のために、クエン酸ナトリウム
を添加しない研磨液を用いて上記と同様にガラス板を研
磨したところ、５０枚以上研磨すると、研磨速度は初期
速度の５０〜６０％に低下した。For comparison, a glass plate was polished in the same manner as above using a polishing liquid containing no sodium citrate. When 50 or more glass plates were polished, the polishing rate decreased to 50-60% of the initial rate. did.
【００１５】（実施例２）酸化セリウム系研磨剤を含有
するガラス研磨液２５リットルに、エチレンジアミン四
酢酸ナトリウムを２０ｍＭ添加し、次いでｐＨを約８に
調整して、研磨液を得た。この研磨液を使用した場合に
おいても、研磨速度の低下はほとんど見られなかった。Example 2 To 25 liters of a glass polishing liquid containing a cerium oxide abrasive, 20 mM of sodium ethylenediaminetetraacetate was added, and then the pH was adjusted to about 8 to obtain a polishing liquid. Even when this polishing liquid was used, there was almost no decrease in the polishing rate.
【００１６】（実施例３）酸化セリウム系研磨剤を含有
するガラス研磨液２５リットルに、酒石酸を２０ｍＭ添
加し、次いでｐＨを約８に調整して、研磨液を得た。こ
の研磨液を使用した場合においても、研磨速度の低下は
ほとんど見られなかった。Example 3 To 25 liters of a glass polishing liquid containing a cerium oxide-based polishing agent, 20 mM tartaric acid was added, and then the pH was adjusted to about 8 to obtain a polishing liquid. Even when this polishing liquid was used, there was almost no decrease in the polishing rate.
【００１７】[0017]
【発明の効果】以上説明したように、本発明によれば、
アルミニウムと錯体を形成する有機酸及び／又はキレー
ト剤を研磨液に含有させたことで、研磨パッドの目詰ま
りなどによる研磨速度の低下が防止される。このため、
研磨液の交換回数や、研磨パッドのドレッシング処理回
数を低減でき、生産性を向上させることができる。As described above, according to the present invention,
By containing an organic acid and / or a chelating agent that forms a complex with aluminum in the polishing liquid, it is possible to prevent the polishing rate from decreasing due to clogging of the polishing pad. For this reason,
The number of times the polishing liquid is exchanged and the number of times the polishing pad is dressed can be reduced, and the productivity can be improved.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉崎 満壽雄 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuo Sugizaki 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa Prefecture Asahi Glass Co., Ltd. Central Research Laboratory
Claims (6)
られる研磨液において、アルミニウムと錯体を形成する
有機酸及び／又はキレート剤が含有されていることを特
徴とする研磨液。1. A polishing liquid used for polishing a substrate containing aluminum, which contains an organic acid and / or a chelating agent which forms a complex with aluminum.
２００ｍＭ含有する請求項１記載の研磨液。2. The organic acid and / or chelating agent is added in an amount of 10 to 10.
The polishing liquid according to claim 1, which contains 200 mM.
記載の研磨液。3. The method according to claim 1, wherein the pH is adjusted to 7-9.
The polishing liquid described.
酸、蓚酸、フマル酸、コハク酸、マロン酸から選ばれた
少なくとも１種である請求項１〜３のいずれか１つに記
載の研磨液。4. The organic acid according to claim 1, wherein the organic acid is at least one selected from citric acid, malic acid, tartaric acid, oxalic acid, fumaric acid, succinic acid and malonic acid. Polishing liquid.
酸（ＥＤＴＡ）、シクロヘキサンジアミン四酢酸（Ｃｙ
ＤＴＡ）、ジエチレントリアミン五酢酸（ＤＴＰＡ）、
トリエチレンテトラミン六酢酸（ＴＴＨＡ）から選ばれ
た少なくとも１種である請求項１〜４のいずれか１つに
記載の研磨液。5. The chelating agent is ethylenediaminetetraacetic acid (EDTA), cyclohexanediaminetetraacetic acid (Cy).
DTA), diethylenetriaminepentaacetic acid (DTPA),
The polishing liquid according to claim 1, which is at least one selected from triethylene tetramine hexaacetic acid (TTHA).
を用いてアルミニウムを含有する基体を研磨することを
特徴とする基体の研磨方法。6. A method of polishing a substrate, which comprises polishing an aluminum-containing substrate using the polishing liquid according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21721093A JPH0770553A (en) | 1993-09-01 | 1993-09-01 | Abrasive fluid and grinding of substrate therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21721093A JPH0770553A (en) | 1993-09-01 | 1993-09-01 | Abrasive fluid and grinding of substrate therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0770553A true JPH0770553A (en) | 1995-03-14 |
Family
ID=16700596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21721093A Pending JPH0770553A (en) | 1993-09-01 | 1993-09-01 | Abrasive fluid and grinding of substrate therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770553A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751553A2 (en) * | 1995-06-29 | 1997-01-02 | Delco Electronics Corporation | No coat backside wafer grinding process |
| JPH0982668A (en) * | 1995-09-20 | 1997-03-28 | Sony Corp | Polishing slurry and polishing method therewith |
| JP2001244224A (en) * | 1999-10-19 | 2001-09-07 | Applied Materials Inc | Elimination of pad glazing for chemical/mechanical polishing of aluminus |
| US6312317B1 (en) * | 1997-04-04 | 2001-11-06 | Hoya Corporation | Method for the production of glass product |
| EP1274123A1 (en) * | 2000-04-13 | 2003-01-08 | Showa Denko K.K. | Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same |
| US6733553B2 (en) | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
| US7220676B2 (en) | 2000-04-28 | 2007-05-22 | Kao Corporation | Roll-off reducing agent |
| US7666238B2 (en) | 2001-06-21 | 2010-02-23 | Kao Corporation | Polishing composition |
| US7708788B2 (en) | 1996-09-30 | 2010-05-04 | Hitachi Chemical Co, Ltd. | Cerium oxide abrasive and method of polishing substrates |
| US7871308B2 (en) | 1997-12-18 | 2011-01-18 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| JP2012121086A (en) * | 2010-12-07 | 2012-06-28 | Yokkaichi Chem Co Ltd | Additive for polishing and high dispersive polishing slurry |
| WO2016043088A1 (en) * | 2014-09-16 | 2016-03-24 | 山口精研工業株式会社 | Sapphire substrate polishing agent composition |
-
1993
- 1993-09-01 JP JP21721093A patent/JPH0770553A/en active Pending
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751553A3 (en) * | 1995-06-29 | 1998-10-28 | Delco Electronics Corporation | No coat backside wafer grinding process |
| EP0751553A2 (en) * | 1995-06-29 | 1997-01-02 | Delco Electronics Corporation | No coat backside wafer grinding process |
| KR100511843B1 (en) * | 1995-09-20 | 2005-10-26 | 소니 가부시끼 가이샤 | Polishing slurry and polishing method using the polishing slurry |
| JPH0982668A (en) * | 1995-09-20 | 1997-03-28 | Sony Corp | Polishing slurry and polishing method therewith |
| US7867303B2 (en) | 1996-09-30 | 2011-01-11 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of polishing substrates |
| US7708788B2 (en) | 1996-09-30 | 2010-05-04 | Hitachi Chemical Co, Ltd. | Cerium oxide abrasive and method of polishing substrates |
| US6312317B1 (en) * | 1997-04-04 | 2001-11-06 | Hoya Corporation | Method for the production of glass product |
| US8137159B2 (en) | 1997-12-18 | 2012-03-20 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| US8162725B2 (en) | 1997-12-18 | 2012-04-24 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| US7871308B2 (en) | 1997-12-18 | 2011-01-18 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| US7963825B2 (en) | 1997-12-18 | 2011-06-21 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| US8616936B2 (en) | 1997-12-18 | 2013-12-31 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
| JP2001244224A (en) * | 1999-10-19 | 2001-09-07 | Applied Materials Inc | Elimination of pad glazing for chemical/mechanical polishing of aluminus |
| EP1274123A1 (en) * | 2000-04-13 | 2003-01-08 | Showa Denko K.K. | Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same |
| EP1274123A4 (en) * | 2000-04-13 | 2007-03-07 | Showa Denko Kk | Polishing compound for polishing semiconductor device and method for manufacturing semiconductor device using the same |
| US6733553B2 (en) | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
| US7220676B2 (en) | 2000-04-28 | 2007-05-22 | Kao Corporation | Roll-off reducing agent |
| US7666238B2 (en) | 2001-06-21 | 2010-02-23 | Kao Corporation | Polishing composition |
| JP2012121086A (en) * | 2010-12-07 | 2012-06-28 | Yokkaichi Chem Co Ltd | Additive for polishing and high dispersive polishing slurry |
| WO2016043088A1 (en) * | 2014-09-16 | 2016-03-24 | 山口精研工業株式会社 | Sapphire substrate polishing agent composition |
| JPWO2016043088A1 (en) * | 2014-09-16 | 2017-08-10 | 山口精研工業株式会社 | Abrasive composition for sapphire substrate |
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