JPH0770379B2 - Resistor resistance adjustment method - Google Patents

Resistor resistance adjustment method

Info

Publication number
JPH0770379B2
JPH0770379B2 JP62004315A JP431587A JPH0770379B2 JP H0770379 B2 JPH0770379 B2 JP H0770379B2 JP 62004315 A JP62004315 A JP 62004315A JP 431587 A JP431587 A JP 431587A JP H0770379 B2 JPH0770379 B2 JP H0770379B2
Authority
JP
Japan
Prior art keywords
laser beam
resistance
resistance element
resistance value
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62004315A
Other languages
Japanese (ja)
Other versions
JPS63172406A (en
Inventor
明雄 中田
守 西村
直己 宮島
勝 田元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62004315A priority Critical patent/JPH0770379B2/en
Publication of JPS63172406A publication Critical patent/JPS63172406A/en
Publication of JPH0770379B2 publication Critical patent/JPH0770379B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 産業上の利用分野 本発明は抵抗器の抵抗値調整法に関し、特に厚膜抵抗器
の抵抗値を調整する場合に利用されるものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for adjusting a resistance value of a resistor, and more particularly to a method for adjusting a resistance value of a thick film resistor.

従来の技術 従来、この種の抵抗値調整法は、第5図に示すようにト
リミングステージ9の基板位置決め装置上に抵抗値修正
すべき抵抗素子を形成した基板1が準備され、基板1上
の抵抗素子に向けて直交方向からレーザービーム5をレ
ーザービーム照射手段(図示せず)により照射・スキャ
ンしながら抵抗値を修正し、修正が終了した時点でレー
ザービーム5を停止させる。基板1上に抵抗素子が複数
個ある場合は、複数個全部抵抗値調整を行なう。基板1
内の抵抗値調整が終了した時点で、基板1を自動収納装
置6にて、トリミングステージ9上から抵抗値調整済基
板8を収納する収納ストッカー7へ運ぶ。収納が終了す
ると、自動供給装置2で抵抗値未調整基板4が収納して
ある供給ストッカー3から抵抗値未調整基板4をトリミ
ングステージ9へ供給し、抵抗値調整を開始する。同一
抵抗パターンを形成する基板が全て終了した時点で、自
動的に品種を切り替えて抵抗値を調整する方法が一般的
である。
2. Description of the Related Art Conventionally, as shown in FIG. 5, according to the resistance value adjusting method of this type, a substrate 1 having a resistance element whose resistance value is to be corrected is prepared on a substrate positioning device of a trimming stage 9, and the substrate 1 on the substrate 1 is prepared. The resistance value is corrected while irradiating and scanning the laser beam 5 toward the resistance element from the orthogonal direction by the laser beam irradiation means (not shown), and the laser beam 5 is stopped when the correction is completed. When there are a plurality of resistance elements on the substrate 1, the resistance values of all the plurality of resistance elements are adjusted. Board 1
When the resistance value adjustment is completed, the substrate 1 is carried by the automatic storage device 6 from the trimming stage 9 to the storage stocker 7 that stores the resistance-adjusted substrate 8. When the storage is completed, the automatic supply device 2 supplies the resistance-unadjusted substrate 4 from the supply stocker 3 in which the resistance-unadjusted substrate 4 is stored to the trimming stage 9 to start the resistance adjustment. A general method is to automatically switch the type and adjust the resistance value when all the substrates forming the same resistance pattern are finished.

発明が解決しようとする問題点 このような従来の構成では、抵抗値修正に必要な情報を
全てコンピューターメモリー部に記憶させ、無人状態で
自動的に抵抗値修正を行なうため、途中でレーザービー
ムの出力が低下した場合、目的とする抵抗値に修正がで
きない。また、レーザービームの出力を停止させた状態
(Q−sw OFF)にもかかわらず、レーザービームがレ
ーザー発振器から漏れていた場合には、抵抗素子上をレ
ーザービームがスキャンし、抵抗修正してしまい、レー
ザービームが停止(Q−sw OFF)となった直後は目的
とする抵抗値に修正されているが、レーザービームの光
軸が次の抵抗素子に移動する時に抵抗素子上に漏れたレ
ーザービームが照射され、抵抗素子が高くなり、大量の
抵抗値不良品、あるいは特性不良品を生産してしまうと
いう問題点があった。
Problems to be Solved by the Invention In such a conventional configuration, all the information necessary for resistance value correction is stored in the computer memory unit, and resistance value correction is automatically performed in an unattended state. If the output drops, the target resistance cannot be adjusted. If the laser beam leaks from the laser oscillator even when the laser beam output is stopped (Q-sw OFF), the laser beam scans the resistance element and the resistance is corrected. Immediately after the laser beam is stopped (Q-sw OFF), it is corrected to the target resistance value, but when the optical axis of the laser beam moves to the next resistance element, the laser beam leaks onto the resistance element. However, there is a problem that the resistance element becomes high and a large amount of defective resistance value products or defective characteristic products are produced.

本発明は、このような問題点を解決するもので、少なく
とも抵抗値修正する前にレーザー照射手段であるレーザ
ービーム制御部(Q−sw,反射ミラーなど)に不具合は
ないかをチェックし、抵抗値不良を低減させることを目
的とするものである。
The present invention solves such a problem, and at least before correcting the resistance value, the laser beam control unit (Q-sw, reflecting mirror, etc.), which is the laser irradiation means, is checked for any problems, and The purpose is to reduce value defects.

問題点を解決するための手段 絶縁基板上に形成した抵抗素子と、この抵抗素子の両端
に抵抗素子の一部と重なるように形成した一対の電極と
を有する抵抗体からなる抵抗器の前記抵抗素子にレーザ
ービームを照射して切り込みを施して抵抗値を調整する
抵抗器の抵抗値調整法において、少なくとも抵抗素子に
レーザービームを照射して切り込みを施して抵抗値を調
整する前に、前記レーザービームの出力を停止させた状
態で、レーザービームを出力させた時に、前記抵抗素子
の前記電極間の方向に直交する方向にレーザービームが
前記抵抗素子をまたぐように前記抵抗素子幅よりも大き
くスキャンさせるのに相当する作動を前記レーザービー
ムの照射手段に行わせた後、前記作動前後の前記抵抗素
子の抵抗値を比較して、前記レーザービームの出力を停
止させた状態での前記レーザービームの照射手段のレー
ザービームの漏れの有・無を判定し、更に、前記レーザ
ービームを連続出力させた状態で、前記レーザービーム
を前記抵抗素子の電極間の方向に直交する方向にこの抵
抗素子をまたぐように抵抗素子幅より大きくスキャンさ
せた後、この抵抗素子の抵抗値を計測して前記レーザー
ビームの照射の良・否を判定して、少なくとも事前に前
記レーザービームが使用に耐えうるかどうか判定するこ
とを特徴とするものである。
Means for Solving Problems The resistance of a resistor including a resistor having a resistance element formed on an insulating substrate and a pair of electrodes formed so as to overlap a part of the resistance element at both ends of the resistance element. In the resistance value adjusting method of a resistor for irradiating a laser beam to the element to make a cut and adjust the resistance value, at least before irradiating the laser beam to the resistive element to make a cut to adjust the resistance value, the laser When the laser beam is output with the beam output stopped, the laser beam scans larger than the resistance element width so as to cross the resistance element in a direction orthogonal to the direction between the electrodes of the resistance element. After causing the laser beam irradiating means to perform an operation corresponding to, the resistance value of the resistance element before and after the operation is compared, and the laser beam The presence or absence of leakage of the laser beam of the laser beam irradiating means in a state where the output of the laser beam is stopped, and the laser beam is continuously output in the state where the laser beam is continuously output. After making the scanning larger than the resistance element width so as to cross the resistance element in the direction orthogonal to the direction between them, the resistance value of this resistance element is measured to determine whether the laser beam is irradiated or not, and at least It is characterized in that whether or not the laser beam can withstand use is determined in advance.

作用 この構成により、正確な抵抗値修正が可能となり、ま
た、万一レーザー発振器系統の異常が発生しても、最小
限の不良数に抑えることが可能となる。
Operation With this configuration, it is possible to correct the resistance value accurately, and even if an abnormality occurs in the laser oscillator system, it is possible to suppress the number of defects to the minimum.

実施例 第1図は、本発明の一実施例による抵抗値修正法のレー
ザービームスキャン状態図であり、第2図は断面図であ
り、同図において、11は絶縁性基板、12は抵抗素子13の
一部に重なるように形成した一対の電極、13は抵抗素
子、14は照射手段(図示せず)から照射されたレーザー
ビーム、15はレーザービーム14により絶縁基板11を切除
して形成した溝である。ビームを停止(Q−sw OFF)
の状態でレーザービーム14の光軸を抵抗素子13をまたぐ
ように抵抗素子13幅よりも大きい距離間、すなわち抵抗
素子13を挟むA点からB点まで移動させ、移動する直前
と直後の抵抗値を比較し抵抗値が同一であれば照射手段
はレーザービーム14に漏れがない正常なものであると判
定して、次のステップに進み、同一でない場合はレーザ
ービームが漏れているため、第1図のC方向から見た断
面図である第2図の抵抗素子13表面の漏れたビームが照
射された部分には溝15ができる。この時点で、ある目的
値に抵抗修正を連続で行なっても不良品を製造するもの
であり火災の危険性もあるため、照射手段であるレーザ
ー発振器内にあるメカニカルシャッターでビーム経路を
遮断し設備を停止させ、修理される。レーザービームが
漏れていない場合、次のステップとして、前記抵抗素子
の第1図の抵抗素子13を挟むA点からB点までをレーザ
ービームが連続出力(Q−sw ON)の状態で光軸をスキ
ャンし、スキャンが終了した時点で抵抗値を計測する適
正なパワーが出力されている場合、第1図のC方向から
見た断面である第3図のように、レーザービームによる
溝が完全に基板11まで届いており、抵抗素子は基板11の
溝間の高抵抗値(断線状態)で抵抗素子としては機能し
ない状態となる。
Embodiment FIG. 1 is a laser beam scanning state diagram of a resistance value correcting method according to an embodiment of the present invention, and FIG. 2 is a sectional view, in which 11 is an insulating substrate and 12 is a resistance element. A pair of electrodes formed so as to overlap a part of 13; 13 is a resistance element; 14 is a laser beam emitted from an irradiation means (not shown); and 15 is formed by cutting the insulating substrate 11 with a laser beam 14. It is a groove. Stop the beam (Q-sw OFF)
In this state, the optical axis of the laser beam 14 is moved for a distance larger than the width of the resistance element 13 so as to straddle the resistance element 13, that is, from the point A to the point B on which the resistance element 13 is sandwiched, and the resistance value immediately before and after the movement. If the resistance values are the same, the irradiation means determines that the laser beam 14 is normal without leakage, and proceeds to the next step. If they are not the same, the laser beam has leaked. A groove 15 is formed in a portion of the surface of the resistance element 13 of FIG. 2 which is a cross-sectional view as seen from the direction C of FIG. At this point, even if resistance correction is continuously performed to a certain target value, defective products will be produced and there is a risk of fire.Therefore, the mechanical shutter in the laser oscillator, which is the irradiation means, cuts off the beam path and the equipment is cut off. Will be stopped and repaired. If the laser beam is not leaking, the next step is to set the optical axis from the point A to the point B sandwiching the resistance element 13 in FIG. 1 of the resistance element with the laser beam continuously output (Q-sw ON). When a proper power for measuring the resistance value is output at the time of scanning, the groove formed by the laser beam is completely removed as shown in FIG. 3 which is a cross section viewed from the direction C in FIG. The resistance element reaches the substrate 11, and the resistance element is in a state of not functioning as a resistance element due to the high resistance value (broken state) between the grooves of the substrate 11.

上記高抵抗値より極めて低い抵抗値が計測された場合は
第4図のようにレーザービームによる溝が完全に基板ま
で届いていないため、適正なレーザービーム出力が得ら
れておらず、ある目的値の抵抗修正を連続で行なっても
目的値に修正されないと判断し、設備稼動を停止し、修
理される。
When a resistance value extremely lower than the above high resistance value is measured, as shown in FIG. 4, the groove by the laser beam has not completely reached the substrate, so an appropriate laser beam output is not obtained, and a certain target value is obtained. It is judged that the target value will not be corrected even if the resistance correction is continuously performed, and the equipment operation is stopped and repaired.

このような、レーザービーム漏れおよびレーザービーム
のパワーの適正チェックの判定が良となれば、実際の抵
抗素子へのトリミング作業に入る。
If the laser beam leakage and the appropriate check of the power of the laser beam are good, the trimming operation to the actual resistance element starts.

なお、チェックされる素子は同一抵抗パターンを形成す
る基板の最初の抵抗体を用いることが効率的である。
It is efficient to use the first resistor of the substrate forming the same resistance pattern as the element to be checked.

発明の効果 以上のように本発明によれば、レーザービームの出力を
停止させた状態で、抵抗素子上にレーザービームをスキ
ャンさせたのと同様の作動をレーザービーム照射手段に
させて、スキャン前後の抵抗素子の抵抗値を比較するこ
とにより、レーザービームの漏れの有・無を判定し、レ
ーザービームを連続出力させた状態で、抵抗素子上にレ
ーザービームをスキャンさせた後、抵抗素子の抵抗値を
計測して、レーザービームの照射の良・否を判定して、
前記レーザービームが使用に耐えうるかどうかの判定を
少なくとも事前に行なうことによって、素子の特性を完
全に保証するものである。
EFFECTS OF THE INVENTION As described above, according to the present invention, with the laser beam output stopped, the same operation as scanning the laser beam on the resistance element is performed by the laser beam irradiation means, and before and after scanning. By comparing the resistance values of the resistance elements, the presence or absence of laser beam leakage is determined, and the laser beam is scanned continuously with the laser beam continuously output. Measure the value to judge whether the laser beam irradiation is good or not,
The characteristics of the device are completely guaranteed by at least making a judgment in advance whether or not the laser beam can be used.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例による抵抗値修正法を示す状
態図で、第2図,第3図,第4図は第1図の断面図、第
5図は従来の抵抗値修正法を示すブロック図である。 11……絶縁性基板、12……電極、13……抵抗素子、14…
…レーザービーム、15……レーザービームによる溝。
FIG. 1 is a state diagram showing a resistance correction method according to an embodiment of the present invention. FIGS. 2, 3, and 4 are sectional views of FIG. 1, and FIG. 5 is a conventional resistance correction method. It is a block diagram showing. 11 ... Insulating substrate, 12 ... Electrode, 13 ... Resistance element, 14 ...
… Laser beam, 15… Groove by laser beam.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板上に形成した抵抗素子と、この抵
抗素子の両端に抵抗素子の一部と重なるように形成した
一対の電極とを有する抵抗体からなる抵抗器の前記抵抗
素子にレーザービームを照射して切り込みを施して抵抗
値を調整する抵抗器の抵抗値調整法において、少なくと
も抵抗素子にレーザービームを照射して切り込みを施し
て抵抗値を調整する前に、前記レーザービームの出力を
停止させた状態で、レーザービームを出力させた時に、
前記抵抗素子の前記電極間の方向に直交する方向にレー
ザービームが前記抵抗素子をまたぐように前記抵抗素子
幅よりも大きくスキャンさせるのに相当する作動を前記
レーザービームの照射手段に行わせた後、前記作動前後
の前記抵抗素子の抵抗値を比較して、前記レーザービー
ムの出力を停止させた状態での前記レーザービームの照
射手段のレーザービームの漏れの有・無を判定し、更
に、前記レーザービームを連続出力させた状態で、前記
レーザービームを前記抵抗素子の電極間方向に直交する
方向にこの抵抗素子をまたぐように抵抗素子幅より大き
くスキャンさせた後、この抵抗素子の抵抗値を計測して
前記レーザービームの照射の良・否を判定して、前記レ
ーザービームが使用に耐えうるかどうか判定することを
特徴とする抵抗器の抵抗値調整法。
Claim: What is claimed is: 1. A laser comprising a resistive element comprising a resistive element formed on an insulating substrate and a pair of electrodes formed on both ends of the resistive element so as to partially overlap the resistive element. In the resistance value adjusting method of a resistor for irradiating a beam to make a cut and adjust the resistance value, at least the output of the laser beam before irradiating a laser beam to the resistive element to make a cut and adjust the resistance value When the laser beam is output with the laser stopped,
After causing the laser beam irradiating means to perform an operation corresponding to scanning the laser beam in a direction orthogonal to the direction between the electrodes of the resistance element so as to cross the resistance element and be larger than the resistance element width. , Comparing the resistance value of the resistance element before and after the operation, to determine the presence or absence of the laser beam leakage of the laser beam irradiation means in the state where the output of the laser beam is stopped, further, After continuously outputting the laser beam, the laser beam is scanned in a direction orthogonal to the inter-electrode direction of the resistance element so as to be larger than the resistance element width so as to cross the resistance element, and then the resistance value of the resistance element is changed. A resistor characterized by measuring and judging whether or not the laser beam is irradiated, and judging whether or not the laser beam can withstand use. Anti-value adjustment method.
JP62004315A 1987-01-12 1987-01-12 Resistor resistance adjustment method Expired - Fee Related JPH0770379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62004315A JPH0770379B2 (en) 1987-01-12 1987-01-12 Resistor resistance adjustment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62004315A JPH0770379B2 (en) 1987-01-12 1987-01-12 Resistor resistance adjustment method

Publications (2)

Publication Number Publication Date
JPS63172406A JPS63172406A (en) 1988-07-16
JPH0770379B2 true JPH0770379B2 (en) 1995-07-31

Family

ID=11581041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62004315A Expired - Fee Related JPH0770379B2 (en) 1987-01-12 1987-01-12 Resistor resistance adjustment method

Country Status (1)

Country Link
JP (1) JPH0770379B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69032898T2 (en) 1990-08-22 1999-07-29 Nellcor Puritan Bennett Inc Fetal pulse oxygen meter
JP4508023B2 (en) * 2005-07-21 2010-07-21 株式会社デンソー Laser trimming evaluation method and laser intensity setting method for laser trimming

Also Published As

Publication number Publication date
JPS63172406A (en) 1988-07-16

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