JPH0766050A - Thin-film inductor and thin-film transformer - Google Patents
Thin-film inductor and thin-film transformerInfo
- Publication number
- JPH0766050A JPH0766050A JP20759893A JP20759893A JPH0766050A JP H0766050 A JPH0766050 A JP H0766050A JP 20759893 A JP20759893 A JP 20759893A JP 20759893 A JP20759893 A JP 20759893A JP H0766050 A JPH0766050 A JP H0766050A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- magnetic film
- thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、コンバータやスイッチ
ング電源等に好適で、導電性パターンにより小形に構成
された高周波特性に優れる高周波用の薄膜インダクタお
よびトランスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency thin film inductor and a transformer which are suitable for a converter, a switching power supply and the like, and which are small in size by a conductive pattern and have excellent high frequency characteristics.
【０００２】[0002]
【従来の技術】近年、ポータブル機器の普及にともな
い、電子機器構成部品の小形化・軽量化が強く要請され
るようになった。高品質な電力が得られるスイッチング
電源等においても小形化は必須の課題であり、スイッチ
ング周波数の高周波化により、トランス、コンデンサ等
の部品を小さくすることで小形化が進められてきた。ス
イッチング周波数をＭＨｚ帯域まで高めた小形電源の開
発では、さらに高周波化に対応すべく薄膜形成技術を用
いたトランス・インダクタの検討も進められている。
（例えば、山口，大沼，今川，鳥生，電気学会研究会資
料，ＭＡＧ−９１−６２，１９９１．）図７に薄膜形成
技術で作製された従来の薄膜インダクタの構造模式図を
示す。図７（ａ）は上面図、図７（ｂ）は図７（ａ）中
の中心Ｏからの線分ＯＰにおける断面図を示す。図中、
１は基板、２は絶縁膜、３は第１の磁性膜、４はスパイ
ラル状の平面コイル、５はその平面コイル４の引き出し
導線、６は第２の磁性膜を示している。この薄膜インダ
クタは、第１の磁性膜３が基板１上に形成され、その上
にスパイラル状の平面コイル４が絶縁膜２で絶縁された
状態に形成され、さらにその絶縁膜２の上に第２の磁性
膜６が形成されて成る。上記の第１の磁性膜３と第２の
磁性膜６とは、スパイラル状の平面コイル４の内周の内
側および外周の外側で接続され、閉磁路構造となってい
る。2. Description of the Related Art In recent years, with the spread of portable equipment, there has been a strong demand for downsizing and weight reduction of electronic equipment components. Miniaturization is also an essential issue in switching power supplies and the like that can obtain high-quality power, and miniaturization has been promoted by reducing components such as transformers and capacitors due to higher switching frequencies. In the development of a compact power supply with a switching frequency raised to the MHz band, a transformer / inductor using a thin film forming technology is being studied in order to respond to higher frequencies.
(For example, Yamaguchi, Onuma, Imagawa, Torio, The Institute of Electrical Engineers of Japan material, MAG-91-62, 1991.) FIG. 7 shows a structural schematic view of a conventional thin film inductor manufactured by a thin film forming technique. 7A shows a top view, and FIG. 7B shows a cross-sectional view taken along a line segment OP from the center O in FIG. 7A. In the figure,
Reference numeral 1 is a substrate, 2 is an insulating film, 3 is a first magnetic film, 4 is a spiral planar coil, 5 is a lead wire of the planar coil 4, and 6 is a second magnetic film. In this thin film inductor, a first magnetic film 3 is formed on a substrate 1, a spiral planar coil 4 is formed thereon in a state of being insulated by an insulating film 2, and a first magnetic film 3 is further formed on the insulating film 2. The second magnetic film 6 is formed. The first magnetic film 3 and the second magnetic film 6 are connected to each other on the inner side and the outer side of the spiral planar coil 4 to form a closed magnetic circuit structure.
【０００３】ここで、上記第１および第２の磁性膜３，
６および上記スパイラル状の平面コイル４、引き出し導
線５は、スパッタ法、真空蒸着法や湿式めっき等の薄膜
形成技術により成膜されており、絶縁膜２はスパッタ
法、真空蒸着法等によるＳｉＯ2，ＳｉＯ，Ａｌ2Ｏ3等
あるいはスピンコータ等によるポリイミド等の塗布で形
成されている。なお、スパイラル状の平面コイル４と引
き出し導線５のペアを複数とすることで薄膜トランスも
同様に作製できる。Here, the first and second magnetic films 3,
6 and the spiral planar coil 4, the drawer conductor 5, a sputtering method, which is deposited by a thin film forming technique such as vacuum deposition method or wet plating, the insulating film 2 SiO 2 by a sputtering method, a vacuum evaporation method, or the like , SiO, Al 2 O 3 or the like, or by coating with polyimide or the like by a spin coater or the like. A thin film transformer can be similarly manufactured by using a plurality of pairs of the spiral planar coil 4 and the lead wire 5.
【０００４】従来、第１と第２の磁性膜３，６の接続
は、引き出し導線５の引き出し部を除いて、また図７に
示すように磁性膜の磁化方向を制御するために設けたス
リット部３ａを除いて、スパイラル状の平面コイル４の
外周の外側で全体にわたって接続されていた。Conventionally, the first and second magnetic films 3 and 6 are connected by a slit provided for excluding the lead-out portion of the lead wire 5 and for controlling the magnetization direction of the magnetic film as shown in FIG. Except for the portion 3a, the spiral planar coil 4 was entirely connected outside the outer circumference.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来技術による薄膜インダクタまたは薄膜トランスでは、
外周部の磁性膜の接続部分の磁性膜断面積（概ね外周長
×平面方向の厚さ）に比べて、内周部の磁性膜の接続部
分の磁性膜断面積（概ね内周長×平面方向の厚さ）が小
さいために、内周部の磁性膜においては磁気飽和が容易
に発生し、磁性体部の損失増加並びに漏れ磁束によるコ
イル抵抗の増加が生じるという問題があった。また、内
周部での磁気飽和を避けるために励磁条件を緩和する
と、外周部の磁性体はほとんど有効に活用されず、イン
ダクタあるいはトランスの性能が著しく低下するという
問題を生じた。また、磁性体の高周波特性を向上させる
にはコイルによる励磁方向を磁性体の容易磁化方向（磁
化容易軸）に対し垂直方向（磁化困難軸）にする“困難
軸励磁”を行うことが有効であるが、従来技術による磁
性膜では円形平板状の形状のために、困難軸励磁を行う
ことが難しかった。また、磁性膜内に生じる渦電流を低
減させるために、磁性膜にスリット部を設けた場合、内
周部の磁性膜の接続断面積がさらに小さくなるという問
題もあった。However, in the above-mentioned conventional thin film inductor or thin film transformer,
Compared to the magnetic film cross-sectional area (generally outer peripheral length x thickness in the plane direction) of the connecting portion of the outer peripheral magnetic film, the magnetic film cross-sectional area (generally inner peripheral length x plane direction) of the inner peripheral magnetic film connecting portion However, there is a problem in that magnetic saturation easily occurs in the magnetic film on the inner peripheral portion, resulting in increased loss in the magnetic body portion and increased coil resistance due to leakage flux. Further, if the excitation condition is relaxed in order to avoid magnetic saturation in the inner peripheral part, the magnetic material in the outer peripheral part is hardly used effectively, and the performance of the inductor or the transformer is significantly deteriorated. In order to improve the high frequency characteristics of the magnetic material, it is effective to perform "hard axis excitation" in which the direction of excitation by the coil is perpendicular to the easy magnetization direction (easy axis of magnetization) of the magnetic material (hard axis of magnetization). However, since the magnetic film according to the conventional technique has a circular flat plate shape, it is difficult to perform hard axis excitation. Further, when a slit portion is provided in the magnetic film in order to reduce the eddy current generated in the magnetic film, there is a problem that the connection cross-sectional area of the magnetic film in the inner peripheral portion is further reduced.
【０００６】本発明は、上記問題点を克服し、薄膜イン
ダクタ、薄膜トランスの磁性体部の損失ならびにコイル
抵抗による損失を低減するために、磁気飽和を抑制し、
同時にコイル抵抗の増加を抑える新規の構造の薄膜イン
ダクタおよび薄膜トランスを提案することを目的とする
ものである。The present invention overcomes the above problems and suppresses magnetic saturation in order to reduce the loss of the magnetic material portion of the thin film inductor and thin film transformer and the loss due to the coil resistance.
At the same time, it is an object of the present invention to propose a thin film inductor and a thin film transformer having a new structure that suppresses an increase in coil resistance.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の薄膜インダクタおよび薄膜トランスでは、
薄膜インダクタおよび薄膜トランスを構成するスパイラ
ル状の平面コイルの外周部の外側における磁性膜接続部
の磁性膜断面積を、内周部の内側における磁性膜接続部
の磁性膜断面積と概ね同一にすることを特徴としてい
る。In order to achieve the above object, in the thin film inductor and thin film transformer of the present invention,
Make the magnetic film cross-sectional area of the magnetic film connection part outside the outer periphery of the spiral planar coil that constitutes the thin film inductor and thin film transformer approximately the same as the magnetic film cross-sectional area of the magnetic film connection part inside the inner periphery. It is characterized by that.
【０００８】[0008]
【作用】本発明の薄膜トランスおよび薄膜インダクタで
は、外周部の磁性膜接続部の磁性膜断面積と内周部の磁
性膜接続部の磁性膜断面積を概ね同一にすることによ
り、内周部の接続部の磁性膜における磁気飽和を緩和さ
せる。この磁気飽和の緩和によって、磁性体の損失並び
に漏れ磁束によるコイル抵抗の増加を低減させるととも
に、外周部の磁性体を有効に活用することを可能にし
て、励磁条件を高く設定可能とし、トランスあるいはイ
ンダクタの特性を向上させる。In the thin film transformer and the thin film inductor of the present invention, the magnetic film cross-sectional area of the magnetic film connecting portion of the outer peripheral portion and the magnetic film cross-sectional area of the magnetic film connecting portion of the inner peripheral portion are made substantially the same, so that the inner peripheral portion The magnetic saturation in the magnetic film of the connection part of is relaxed. This relaxation of the magnetic saturation reduces the loss of the magnetic material and the increase of the coil resistance due to the leakage magnetic flux, and also enables the magnetic material in the outer peripheral portion to be effectively utilized, so that the excitation condition can be set high and the transformer or Improve inductor characteristics.
【０００９】[0009]
【実施例】以下、本発明の実施例を、図面を参照して詳
細に説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００１０】［実施例１］図１は、本発明の第１の実施
例を示す薄膜インダクタの構造模式図である。図１
（ａ）は上面図、図１（ｂ）は図１（ａ）中の中心Ｏか
らの線分ＯＰにおける断面図を示す。図中、１は基板、
２は絶縁膜、３は第１の磁性膜、４はスパイラル状の平
面コイル、５はその平面コイル４の引き出し導線、６は
第２の磁性膜を示している。第１の磁性膜３上に絶縁膜
２が形成され、この絶縁膜２上にスパイラル状の平面コ
イル４が形成され、さらにスパイラル状の平面コイル４
の上に、絶縁膜２を介して第２の磁性膜６が形成されて
いる。なお、スパイラル状の平面コイルを２つ以上形成
する場合には、絶縁膜２を介して絶縁して形成する。[Embodiment 1] FIG. 1 is a structural schematic view of a thin film inductor showing a first embodiment of the present invention. Figure 1
1A is a top view, and FIG. 1B is a cross-sectional view taken along a line segment OP from the center O in FIG. In the figure, 1 is a substrate,
Reference numeral 2 is an insulating film, 3 is a first magnetic film, 4 is a spiral planar coil, 5 is a lead wire of the planar coil 4, and 6 is a second magnetic film. The insulating film 2 is formed on the first magnetic film 3, the spiral planar coil 4 is formed on the insulating film 2, and the spiral planar coil 4 is further formed.
A second magnetic film 6 is formed on top of the insulating film 2. When two or more spiral planar coils are formed, they are formed so as to be insulated via the insulating film 2.
【００１１】本実施例では、少なくとも一方の磁性膜の
形状として第２の磁性膜６の形状が概ね長方形形状とさ
れ、第１の磁性膜３と第２の磁性膜６とが、スパイラル
状の平面コイル４の内周の内側全体にわたって、および
外周の外側２箇所で接続され、閉磁路構造となってい
る。このような構造によって、第１の磁性膜３と第２の
磁性膜６が接続されている部分の磁性膜の断面積が外周
の外側の接続部と内周の内側の接続部で概ね同一にでき
る。なお、スパイラル状の平面コイル４に若干段差が生
じるが、第１の磁性膜３のパタンを第２の磁性膜６のパ
タンと同一にすることも可能である。In this embodiment, at least one of the magnetic films has a second magnetic film 6 having a substantially rectangular shape, and the first magnetic film 3 and the second magnetic film 6 have a spiral shape. The flat coil 4 is connected over the entire inner side of the inner periphery and at two outer sides of the outer periphery to form a closed magnetic circuit structure. With such a structure, the cross-sectional area of the magnetic film in the portion where the first magnetic film 3 and the second magnetic film 6 are connected is substantially the same in the outer outer connecting portion and the inner inner connecting portion. it can. Although the spiral planar coil 4 is slightly stepped, the pattern of the first magnetic film 3 may be the same as the pattern of the second magnetic film 6.
【００１２】図１に示した本発明の薄膜インダクタは、
以下に示す方法例で作製される。絶縁層を有した基板１
の上に、スパッタ法やイオンビーム蒸着法で第１の磁性
膜３、例えばＣｏＺｒＲｅ，ＣｏＦｅＳｉＢ等の膜を堆
積し、所望のパタンにイオンビームエッチング法や反応
性イオンエッチング法等で加工する。次に、スパッタ法
や真空蒸着法等により絶縁膜２の一部を堆積し、後で磁
性膜を接続する部分の穴開け加工をイオンビームエッチ
ングや反応性エッチング法等で行う。絶縁膜２は、また
スピンコータ等によるポリイミド等の塗布でも形成する
ことができる。続けて、引き出し導線５を真空蒸着法や
スパッタ法等で例えばＣｕを堆積して、所望のパタンに
加工して形成する。さらに、上記と同様の方法により絶
縁膜２の別の一部、Ｃｕ等によるスパイラル状の平面コ
イル４、絶縁膜２のさらに別の一部および第２の磁性膜
６を順次形成し、本発明の薄膜インダクタを得る。絶縁
膜２の形成に際しては、バイアススパッタ法やフォトレ
ジスト等を用いた均一エッチング法等により平坦化処理
を併せて行う。引き出し導線５とスパイラル状のコイル
４は絶縁膜２に設けたスルーホールにより接続される。
また、第１の磁性膜３と第２の磁性膜６も同様に絶縁膜
２に設けたスルーホールにより接続される。The thin film inductor of the present invention shown in FIG.
It is produced by the method example shown below. Substrate 1 having an insulating layer
A first magnetic film 3, for example, a film of CoZrRe, CoFeSiB, or the like is deposited on the above by a sputtering method or an ion beam evaporation method, and is processed into a desired pattern by an ion beam etching method or a reactive ion etching method. Next, a part of the insulating film 2 is deposited by a sputtering method, a vacuum evaporation method, or the like, and a hole for forming a portion to which the magnetic film is connected later is subjected to ion beam etching, reactive etching, or the like. The insulating film 2 can also be formed by coating polyimide or the like with a spin coater or the like. Subsequently, the lead wire 5 is formed by depositing, for example, Cu by a vacuum vapor deposition method, a sputtering method, or the like and processing it into a desired pattern. Further, another part of the insulating film 2, the spiral planar coil 4 made of Cu or the like, another part of the insulating film 2 and the second magnetic film 6 are sequentially formed by the same method as described above. To obtain a thin film inductor. When forming the insulating film 2, a planarization process is also performed by a bias sputtering method, a uniform etching method using a photoresist, or the like. The lead wire 5 and the spiral coil 4 are connected by a through hole provided in the insulating film 2.
Further, the first magnetic film 3 and the second magnetic film 6 are similarly connected by the through holes provided in the insulating film 2.
【００１３】なお、上記の実施例におけるスパイラル状
の平面コイル４と引き出し導線５のペアを複数とするこ
とで薄膜トランスも同様に作製できることは言うまでも
ない。例えば、図２に断面模式図を示すようにトランス
の１次コイル８と２次コイル９を平行に配置することで
薄膜トランスを得ることができる。Needless to say, a thin film transformer can be similarly manufactured by using a plurality of pairs of the spiral planar coil 4 and the lead wire 5 in the above embodiment. For example, a thin film transformer can be obtained by arranging the primary coil 8 and the secondary coil 9 of the transformer in parallel as shown in the schematic sectional view of FIG.
【００１４】以上、構造と製法を説明したように、本発
明の薄膜インダクタでは、スパイラル状の平面コイル４
の外周部および内周部における、第１の磁性膜３と第２
の磁性膜６の接続部の磁性膜の断面積を概ね同一とする
ことができ、磁性体を薄膜全体にわたって有効に利用で
きる。さらに、図１に示すように第１の磁性膜３と第２
の磁性膜６のスパイラル状平面コイル４の外周部におけ
る接続点を２箇所とし、少なくとも一方の磁性膜を概ね
長方形形状とし、励磁方向すなわち図中の線分ＯＰに垂
直方向に磁化容易軸方向を揃えることにより、磁性膜の
困難軸励磁が可能となり、高周波における磁性膜の特性
を向上させることが可能となる。As described above with respect to the structure and manufacturing method, in the thin film inductor of the present invention, the spiral planar coil 4 is used.
Of the first magnetic film 3 and the second magnetic film on the outer and inner peripheral portions of the
The cross-sectional area of the magnetic film at the connection portion of the magnetic film 6 can be made substantially the same, and the magnetic substance can be effectively used over the entire thin film. Further, as shown in FIG. 1, the first magnetic film 3 and the second magnetic film 3
There are two connection points of the magnetic film 6 on the outer peripheral portion of the spiral planar coil 4, at least one of the magnetic films has a substantially rectangular shape, and the magnetization easy axis direction is perpendicular to the exciting direction, that is, the line segment OP in the drawing. By aligning them, it is possible to excite the hard axis of the magnetic film and improve the characteristics of the magnetic film at high frequencies.
【００１５】なお、磁性膜の容易磁化方向を誘導する手
段として、試料側面に永久磁石を設置し磁石からの漏れ
磁界中で成膜する磁界中成膜法、あるいはインダクタあ
るいはトランス完成後に磁界中で熱処理を行う磁界中熱
処理法を用いることができる。また、図３に断面模式図
を示すように、作製上第２の磁性膜が段差部で薄くなる
場合、第３の磁性膜７をスパイラル状の平面コイル４の
外周部および内周部の接続点に新たに堆積することで、
磁性膜の磁気特性を向上できる。As a means for inducing the easy magnetization direction of the magnetic film, a permanent magnet is installed on the side surface of the sample to form a film in a leakage magnetic field from the magnet, or in a magnetic field after completion of the inductor or transformer. A heat treatment method in a magnetic field for performing heat treatment can be used. In addition, as shown in the schematic cross-sectional view of FIG. 3, when the second magnetic film is thinned at the step due to fabrication, the third magnetic film 7 is connected to the outer peripheral portion and the inner peripheral portion of the spiral planar coil 4. By newly depositing on the point,
The magnetic characteristics of the magnetic film can be improved.
【００１６】［実施例２］次に、本発明の第２の実施例
を、図面を参照して詳細に説明する。[Embodiment 2] Next, a second embodiment of the present invention will be described in detail with reference to the drawings.
【００１７】図４は、本発明の第２の実施例を示す薄膜
インダクタの構造模式図である。図４（ａ）は上面図、
図４（ｂ）は図４（ａ）中の中心Ｏからの線分ＯＰにお
ける断面図を示す。図中、１は基板、２は絶縁膜、３は
第１の磁性膜、４はスパイラル状の平面コイル、６は第
２の磁性膜を示している。FIG. 4 is a structural schematic view of a thin film inductor showing a second embodiment of the present invention. FIG. 4A is a top view,
FIG. 4B is a sectional view taken along the line segment OP from the center O in FIG. In the figure, 1 is a substrate, 2 is an insulating film, 3 is a first magnetic film, 4 is a spiral planar coil, and 6 is a second magnetic film.
【００１８】前述の第１の実施例ではスパイラル状の平
面コイル４の全体形状が円形状であったのに対し、本実
施例では長円形状とする。また、少なくとも一方の磁性
膜の形状として第２の磁性膜６を長方形形状とし、中心
Ｏの両側の平面コイル４の各直線部分を絶縁膜２により
絶縁された状態で第１の磁性膜３と第２の磁性膜６とで
挟む構造とする。第１の磁性膜３と第２の磁性膜６と
は、スパイラル状の平面コイル４の内周の内側２箇所お
よび外周の外側２箇所で接続され、閉磁路構造となって
いる。このような構造によって、本実施例においても、
第１の磁性膜３と第２の磁性膜６が接続されている部分
の磁性膜の断面積が外周の外側の接続部と内周の内側の
接続部で概ね同一にできる。なお、スパイラル状の平面
コイル４に若干段差が生じるが、第１の磁性膜３のパタ
ンを第２の磁性膜６のパタンと同一にすることも可能で
ある。また、スパイラル状の平面コイルを２つ以上形成
する場合には、絶縁膜２を介して絶縁して形成する。In the first embodiment described above, the overall shape of the spiral planar coil 4 is circular, whereas in the present embodiment it is oval. In addition, at least one of the magnetic films has a second magnetic film 6 having a rectangular shape, and each linear portion of the planar coil 4 on both sides of the center O is insulated from the first magnetic film 3 by the insulating film 2. The structure sandwiched by the second magnetic film 6 is adopted. The first magnetic film 3 and the second magnetic film 6 are connected to each other at two points on the inner side and two points on the outer side of the spiral planar coil 4 to form a closed magnetic circuit structure. With such a structure, also in this embodiment,
The cross-sectional area of the magnetic film at the portion where the first magnetic film 3 and the second magnetic film 6 are connected can be made substantially the same at the outer outer connecting portion and the inner inner connecting portion. Although the spiral planar coil 4 is slightly stepped, the pattern of the first magnetic film 3 may be the same as the pattern of the second magnetic film 6. When two or more spiral-shaped planar coils are formed, they are formed so as to be insulated via the insulating film 2.
【００１９】図４に示した第２の実施例の薄膜インダク
タは、以下に示す方法例で作製される。絶縁層を有した
基板の上に、スパッタ法やイオンビーム蒸着法で第１の
磁性膜３、例えばＣｏＺｒＲｅ，ＣｏＦｅＳｉＢ等の膜
を堆積し、所望のパタンにイオンビームエッチング法や
反応性イオンエッチング法等で加工する。次に、スパッ
タ法や真空蒸着法等により絶縁膜２の一部を堆積し、後
で磁性膜を接続する部分の穴開け加工をイオンビームエ
ッチングや反応性エッチング法等で行う。絶縁膜２はま
た、スピンコータ等によるポリイミド等の塗布でも形成
することができる。続けて、Ｃｕ等によるスパイラル状
の平面コイル４、絶縁膜２の別の一部および第２の絶縁
膜６を順次形成し、本実施例の薄膜インダクタを得る。
絶縁膜２の形成に際しては、バイアススパッタ法やフォ
トレジスト等を用いた均一エッチング法等により平坦化
処理を併せて行う。第１の磁性膜３と第２の磁性膜６は
絶縁膜２に設けたスルーホールにより接続される。The thin film inductor of the second embodiment shown in FIG. 4 is manufactured by the following method example. A first magnetic film 3, for example, a film of CoZrRe, CoFeSiB, or the like is deposited on a substrate having an insulating layer by a sputtering method or an ion beam evaporation method, and an ion beam etching method or a reactive ion etching method is applied to a desired pattern. Etc. Next, a part of the insulating film 2 is deposited by a sputtering method, a vacuum evaporation method, or the like, and a hole for forming a portion to which the magnetic film is connected later is subjected to ion beam etching, reactive etching, or the like. The insulating film 2 can also be formed by applying polyimide or the like using a spin coater or the like. Subsequently, the spiral planar coil 4 made of Cu or the like, another part of the insulating film 2 and the second insulating film 6 are sequentially formed to obtain the thin film inductor of this embodiment.
When forming the insulating film 2, a planarization process is also performed by a bias sputtering method, a uniform etching method using a photoresist, or the like. The first magnetic film 3 and the second magnetic film 6 are connected by a through hole provided in the insulating film 2.
【００２０】なお、スパイラル状の平面コイル４を複数
とすることで薄膜トランスも同様に作製できることは言
うまでもない。例えば、図５，図６に断面模式図を示す
ようにトランスの１次コイル８と２次コイル９を平行に
あるいは、上下に配置することで薄膜トランスを得るこ
とができる。Needless to say, a thin film transformer can be similarly manufactured by using a plurality of spiral planar coils 4. For example, a thin film transformer can be obtained by arranging the primary coil 8 and the secondary coil 9 of the transformer in parallel or vertically as shown in schematic sectional views in FIGS.
【００２１】以上、構造と製法を説明したように、第２
の実施例による薄膜インダクタによっても、スパイラル
状の平面コイル４の外周部および内周部における、第１
の磁性膜３と第２の磁性膜６の接続部の磁性膜の断面積
を概ね同一とすることができ、磁性体を薄膜全体にわた
って有効に利用できる。さらに、図４に示すように第１
の磁性膜３と第２の磁性膜６のスパイラル状平面コイル
４の外周部における接続点を２箇所とし、少なくとも一
方の磁性膜を概ね長方形形状とし、励磁方向すなわち図
中の線分ＯＰに垂直な方向に磁化容易軸方向を揃えるこ
とにより、磁性膜の困難軸励磁が可能となり、高周波に
おける磁性膜の特性を向上させることが可能となる。As described above with respect to the structure and manufacturing method, the second
According to the thin film inductor according to the embodiment of the present invention as well, the first and
The cross-sectional areas of the magnetic films at the connection between the magnetic film 3 and the second magnetic film 6 can be made substantially the same, and the magnetic substance can be effectively used over the entire thin film. Further, as shown in FIG.
The magnetic film 3 and the second magnetic film 6 are connected to each other at two connection points in the outer peripheral portion of the spiral planar coil 4, and at least one of the magnetic films has a substantially rectangular shape, and is perpendicular to the excitation direction, that is, the line segment OP in the figure. By aligning the easy magnetization axis directions in different directions, the hard axis of the magnetic film can be excited and the characteristics of the magnetic film at high frequencies can be improved.
【００２２】なお、第１の実施例と同様に、磁性膜の容
易磁化方向を誘導する手段として、試料側面に永久磁石
を設置し磁石からの漏れ磁界中で成膜する磁界中成膜
法、あるいはインダクタあるいはトランス完成後に磁界
中で熱処理を行う磁界中熱処理法を用いることができ
る。As in the first embodiment, as a means for inducing the easy magnetization direction of the magnetic film, a permanent magnet is installed on the side surface of the sample, and a film is formed in a magnetic field leaking from the magnet. Alternatively, a heat treatment method in a magnetic field in which heat treatment is performed in a magnetic field after completion of the inductor or transformer can be used.
【００２３】[0023]
【発明の効果】以上の説明で明らかなように、本発明の
薄膜インダクタおよび薄膜トランスによれば、外周部の
磁性膜断面積と内周部の磁性膜断面積を概ね同一にして
いるので、従来の薄膜インダクタおよび薄膜トランスに
比較して、内周部の磁性膜における磁気飽和を緩和でき
る。このため、磁性体部の損失並びに漏れ磁束によるコ
イル抵抗の増加を低減することが可能となる。また、外
周部の磁性体を有効に活用することを可能となるため、
励磁条件を高く設定することが可能となり、インダクタ
あるいはトランスの特性を向上できる。さらに、請求項
２，４の発明によれば、特に、磁性膜の容易磁化方向を
励磁方向に対し概ね垂直にしているので、困難軸励磁が
可能となり、磁性膜の高周波特性を向上させることがで
きる。As is apparent from the above description, according to the thin film inductor and the thin film transformer of the present invention, the magnetic film cross-sectional area of the outer peripheral portion and the magnetic film cross-sectional area of the inner peripheral portion are substantially the same, As compared with the conventional thin film inductor and thin film transformer, magnetic saturation in the magnetic film in the inner peripheral portion can be relaxed. Therefore, it is possible to reduce the loss of the magnetic body portion and the increase of the coil resistance due to the leakage magnetic flux. Further, since it becomes possible to effectively utilize the magnetic body of the outer peripheral portion,
The excitation condition can be set high, and the characteristics of the inductor or transformer can be improved. Furthermore, according to the second and fourth aspects of the invention, in particular, since the easy magnetization direction of the magnetic film is substantially perpendicular to the excitation direction, hard axis excitation becomes possible and the high frequency characteristics of the magnetic film can be improved. it can.
【図１】（ａ），（ｂ）は本発明の第１の実施例の薄膜
インダクタの構造模式図1A and 1B are schematic structural views of a thin film inductor according to a first embodiment of the present invention.
【図２】上記第１の実施例の薄膜トランスへの適用例を
示す断面模式図FIG. 2 is a schematic sectional view showing an application example of the thin film transformer of the first embodiment.
【図３】上記第１の実施例の薄膜インダクタの実施態様
例を示す断面模式図FIG. 3 is a schematic sectional view showing an example of an embodiment of the thin film inductor of the first embodiment.
【図４】（ａ），（ｂ）は本発明の第２の実施例の薄膜
インダクタの構造模式図4A and 4B are schematic structural views of a thin film inductor according to a second embodiment of the present invention.
【図５】上記第２の実施例の薄膜トランスへの適用例を
示す断面模式図FIG. 5 is a schematic sectional view showing an example of application of the second embodiment to a thin film transformer.
【図６】上記第２の実施例の薄膜トランスへの別の適用
例を示す断面模式図FIG. 6 is a schematic sectional view showing another application example of the thin film transformer of the second embodiment.
【図７】（ａ），（ｂ）は従来の薄膜インダクタの構造
模式図7 (a) and (b) are schematic structural views of a conventional thin film inductor.
１…基板 ２…絶縁膜 ３…第１の磁性膜 ４…スパイラル状の平面コイル ５…引き出し導線 ６…第２の磁性膜 ７…第３の磁性膜 ８…一次コイル ９…二次コイル DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Insulating film 3 ... 1st magnetic film 4 ... Spiral plane coil 5 ... Lead wire 6 ... 2nd magnetic film 7 ... 3rd magnetic film 8 ... Primary coil 9 ... Secondary coil
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柳沢 佳一 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Keiichi Yanagisawa 1-1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation
Claims (4)
状の平面コイルが絶縁膜を介して形成され、前記スパイ
ラル状の平面コイルの上に絶縁膜を介して第２の磁性膜
が形成され、前記第１の磁性膜と第２の磁性膜とが前記
スパイラル状の平面コイルの内周の内側および外周の外
側で接続されている薄膜インダクタにおいて、前記第１
の磁性膜と第２の磁性膜が接続されている部分の磁性膜
の断面積が外周の外側の接続部と内周の内側の接続部で
概ね同一であることを特徴とする薄膜インダクタ。1. One or more spiral planar coils are formed on a first magnetic film via an insulating film, and a second magnetic film is formed on the spiral planar coil via an insulating film. In the thin film inductor formed, the first magnetic film and the second magnetic film are connected inside the inner circumference and outside the outer circumference of the spiral planar coil.
2. The thin film inductor, wherein the cross-sectional area of the magnetic film at the portion where the magnetic film and the second magnetic film are connected is substantially the same at the outer outer peripheral connecting portion and the inner inner connecting portion.
て、磁性膜の容易磁化方向を平面コイルによる励磁方向
に対して概ね垂直方向に揃えたことを特徴とする薄膜イ
ンダクタ。2. The thin film inductor according to claim 1, wherein the easy magnetization direction of the magnetic film is aligned substantially perpendicular to the excitation direction of the plane coil.
状の平面コイルが絶縁膜を介して形成され、前記スパイ
ラル状の平面コイルの上に絶縁膜を介して第２の磁性膜
が形成され、前記第１の磁性膜と第２の磁性膜とが前記
スパイラル状の平面コイルの内周の内側および外周の外
側で接続されている薄膜トランスにおいて、前記第１の
磁性膜と第２の磁性膜が接続されている部分の磁性膜の
断面積が外周の外側の接続部と内周の内側の接続部で概
ね同一であることを特徴とする薄膜トランス。3. Two or more spiral plane coils are formed on the first magnetic film via an insulating film, and a second magnetic film is formed on the spiral plane coil via an insulating film. In the thin film transformer formed, the first magnetic film and the second magnetic film are connected to each other on the inner side and the outer side of the inner surface of the spiral planar coil. The thin film transformer characterized in that the cross-sectional area of the magnetic film at the portion to which the magnetic film is connected is substantially the same at the connection portion outside the outer circumference and the connection portion inside the inner circumference.
磁性膜の容易磁化方向を平面コイルによる励磁方向に対
して概ね垂直方向に揃えたことを特徴とする薄膜トラン
ス。4. The thin film transformer according to claim 2, wherein
A thin film transformer characterized in that the easy magnetization direction of the magnetic film is aligned substantially perpendicular to the excitation direction of the plane coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20759893A JPH0766050A (en) | 1993-08-23 | 1993-08-23 | Thin-film inductor and thin-film transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20759893A JPH0766050A (en) | 1993-08-23 | 1993-08-23 | Thin-film inductor and thin-film transformer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0766050A true JPH0766050A (en) | 1995-03-10 |
Family
ID=16542430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20759893A Pending JPH0766050A (en) | 1993-08-23 | 1993-08-23 | Thin-film inductor and thin-film transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766050A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009061789A2 (en) * | 2007-11-07 | 2009-05-14 | Intel Corporation | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
| KR20130143079A (en) * | 2010-12-14 | 2013-12-30 | 마이크로소프트 코포레이션 | Thin film inductor with integrated gaps |
| CN112002540A (en) * | 2020-07-07 | 2020-11-27 | 瑞声新能源发展(常州)有限公司科教城分公司 | Coil and wireless charging device |
-
1993
- 1993-08-23 JP JP20759893A patent/JPH0766050A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009061789A2 (en) * | 2007-11-07 | 2009-05-14 | Intel Corporation | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
| WO2009061789A3 (en) * | 2007-11-07 | 2009-09-03 | Intel Corporation | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
| US8361594B2 (en) | 2007-11-07 | 2013-01-29 | Intel Corporation | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
| TWI489613B (en) * | 2007-11-07 | 2015-06-21 | Intel Corp | Methods of forming magnetic vias to maximize inductance in integrated circuits and structures formed thereby |
| KR20130143079A (en) * | 2010-12-14 | 2013-12-30 | 마이크로소프트 코포레이션 | Thin film inductor with integrated gaps |
| JP2014504009A (en) * | 2010-12-14 | 2014-02-13 | マイクロソフト コーポレーション | Thin film inductor with integrated gap |
| CN112002540A (en) * | 2020-07-07 | 2020-11-27 | 瑞声新能源发展(常州)有限公司科教城分公司 | Coil and wireless charging device |
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