JPH076330A - Production of magneto-resistance effect head - Google Patents
Production of magneto-resistance effect headInfo
- Publication number
- JPH076330A JPH076330A JP5165950A JP16595093A JPH076330A JP H076330 A JPH076330 A JP H076330A JP 5165950 A JP5165950 A JP 5165950A JP 16595093 A JP16595093 A JP 16595093A JP H076330 A JPH076330 A JP H076330A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- antiferromagnetic material
- material layer
- water
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気ディスク等の磁気
媒体からの再生を行う磁気抵抗効果ヘッド（以下ＭＲヘ
ッドと称する）の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetoresistive head (hereinafter referred to as MR head) for reproducing from a magnetic medium such as a magnetic disk.
【０００２】[0002]
【従来の技術】近年、磁気ディスク等の磁気媒体用の薄
膜磁気ヘッドとして、磁気抵抗効果を利用したＭＲヘッ
ドが実用化され始めている。ＭＲヘッドは、パーマロイ
等の強磁性体薄膜の磁気抵抗効果を利用したものである
ため、磁気媒体との相対速度に依存することなく大きな
再生出力を得ることができる。しかしながら、この種の
材質によるＭＲヘッドは、バルクハウゼンノイズを発生
し易いためこれを抑制する何らかの対策を施す必要があ
る。2. Description of the Related Art In recent years, MR heads utilizing the magnetoresistive effect have begun to be put into practical use as thin film magnetic heads for magnetic media such as magnetic disks. Since the MR head utilizes the magnetoresistive effect of a ferromagnetic thin film such as permalloy, a large reproduction output can be obtained without depending on the relative speed with the magnetic medium. However, since an MR head made of this type of material is likely to generate Barkhausen noise, it is necessary to take some measures to suppress it.
【０００３】バルクハウゼンノイズの発生抑止には、磁
気媒体の面に平行でありかつＭＲ素子の縦方向に平行な
縦バイアス磁界を印加することによってＭＲ素子の単磁
区化を行うことが有効である。特開昭６２−４０６１０
号には、ＦｅＭｎによる反強磁性体膜をＭＲ膜上に積層
することにより反強磁性体膜とＭＲ膜との磁気的相互作
用を利用してこの種の縦バイアス磁界を発生するように
したＭＲヘッドが開示されている。In order to suppress the generation of Barkhausen noise, it is effective to apply a longitudinal bias magnetic field that is parallel to the surface of the magnetic medium and parallel to the longitudinal direction of the MR element to make the MR element a single magnetic domain. . JP-A-62-40610
In the publication, an antiferromagnetic film made of FeMn is laminated on the MR film to generate a longitudinal bias magnetic field of this kind by utilizing the magnetic interaction between the antiferromagnetic film and the MR film. An MR head is disclosed.
【０００４】一般に、ＭＲヘッドを製造する場合には複
数回の洗浄工程が実施される。例えば、ウエハ上に多数
のＭＲ素子を形成する薄膜集積工程においては、レジス
ト膜を有機溶剤で除去した後、洗浄が行われる。また、
ＭＲ素子を形成したウエハをバーに切断した後のスライ
ダ加工工程においては、例えば、精密研磨時に生じる研
磨くず、研磨スラリー等による汚れを取り除くために洗
浄が行われる。Generally, in manufacturing an MR head, a cleaning process is performed a plurality of times. For example, in a thin film integration process for forming a large number of MR elements on a wafer, cleaning is performed after removing the resist film with an organic solvent. Also,
In the slider processing step after the wafer on which the MR element is formed is cut into bars, cleaning is performed to remove, for example, polishing scraps generated during precision polishing, dirt due to polishing slurry and the like.
【０００５】[0005]
【発明が解決しようとする課題】このような洗浄工程で
は、フロンの廃止等もからみ、洗浄水として、超純水、
濃縮超純水、純水、市水等が用いられている。しかしな
がら、バルクハウゼンノイズ抑止のために用いられてい
る反強磁性体膜としてのＦｅＭｎは、この純水に非常に
侵されやすく、溶解及び腐食されやすい。例えば、純水
中においては、２０秒程度で激しい腐食が進行すること
が確認されている。In such a cleaning process, considering the abolition of CFCs, etc., as cleaning water, ultrapure water,
Concentrated ultrapure water, pure water, city water, etc. are used. However, FeMn as an antiferromagnetic film used for suppressing Barkhausen noise is very likely to be invaded by this pure water, and is easily dissolved and corroded. For example, it has been confirmed that in pure water, severe corrosion progresses in about 20 seconds.
【０００６】溶解や腐食が起こると、この反強磁性体膜
による磁気的相互作用が弱まってノイズ抑制効果が大幅
に低減する恐れがあり、さらに、反強磁性体膜自体がＭ
Ｒ層から剥れてしまい、歩留が悪化する恐れがある。If the dissolution or corrosion occurs, the magnetic interaction of the antiferromagnetic material film may be weakened and the noise suppressing effect may be significantly reduced. Further, the antiferromagnetic material film itself may be M.
It may be peeled off from the R layer and the yield may be deteriorated.
【０００７】従って本発明は、反強磁性体膜であるＦｅ
Ｍｎの洗浄工程における溶解、腐食の発生を防止できる
ＭＲヘッド製造方法を提供するものである。Therefore, the present invention is based on the antiferromagnetic film Fe.
The present invention provides an MR head manufacturing method capable of preventing the occurrence of dissolution and corrosion in the Mn cleaning step.
【０００８】[0008]
【課題を解決するための手段】本発明によれば、ＭＲ層
とこのＭＲ層上に積層された反強磁性体層とを有するＭ
Ｒヘッドの製造における洗浄工程で弱アルカリ性の洗浄
水が使用される。According to the present invention, an M having an MR layer and an antiferromagnetic material layer laminated on the MR layer.
Weak alkaline washing water is used in the washing process in the manufacture of the R head.
【０００９】上述の洗浄工程が、集積工程においてＭＲ
層上に反強磁性体層を積層した後に行われる洗浄工程、
又は集積工程後のスライダ加工工程において行われる洗
浄工程であってもよい。The cleaning process described above is performed by the MR in the integration process.
A cleaning step performed after laminating the antiferromagnetic material layer on the layer,
Alternatively, the cleaning process may be performed in the slider processing process after the integration process.
【００１０】[0010]
【作用】反強磁性体層であるＦｅＭｎは、超純水、濃縮
超純水、純水、市水等には侵されやすいがアルカリに対
しては比較的強い。従って、ｐＨ７〜ｐＨ１０の弱アル
カリ性の洗浄水を用いて洗浄を行うことによりその腐食
を防止することができる。The antiferromagnetic material layer FeMn is easily attacked by ultrapure water, concentrated ultrapure water, pure water, city water, etc., but relatively strong against alkali. Therefore, it is possible to prevent the corrosion by washing with weak alkaline washing water having a pH of 7 to 10.
【００１１】[0011]
【実施例】以下実施例により本発明を詳細に説明する。
図１は、本発明の一実施例におけるＭＲヘッドの製造工
程の一部をＡＢＳ面側から概略的に表した工程図であ
る。The present invention will be described in detail with reference to the following examples.
FIG. 1 is a process diagram schematically showing a part of the manufacturing process of an MR head in one embodiment of the present invention from the ABS side.
【００１２】同図（Ａ）に示すように、ウエハ上に形成
されたＳｉＯ2 、Ａｌ2 Ｏ3 等による絶縁層１０上に、
ＮｉＦｅＲｈ、ＮｉＦｅＣｒ、ＣｏＺｒＭｏ等の軟磁性
体層（ＳＡＬ）１１と、Ｔｉ、Ｔａ等の非磁性層（ＭＳ
Ｌ）１２と、ＮｉＦｅ（パーマロイ）等のＭＲ層１３と
をこの順序で連続的に成膜する。この軟磁性体層１１
は、ＭＲ素子に横バイアス磁界を付加してその出力波形
の線形化及び出力増大化を図るための層である。この横
バイアス磁界付加層としては、軟磁性体層の代わりに永
久磁石層等を用いてもよい。As shown in FIG. 1A, on the insulating layer 10 made of SiO 2 , Al 2 O 3 or the like formed on the wafer,
A soft magnetic layer (SAL) 11 made of NiFeRh, NiFeCr, CoZrMo, etc., and a non-magnetic layer (MS) made of Ti, Ta, etc.
L) 12 and the MR layer 13 such as NiFe (permalloy) are continuously formed in this order. This soft magnetic layer 11
Is a layer for applying a lateral bias magnetic field to the MR element to linearize the output waveform and increase the output. As the lateral bias magnetic field adding layer, a permanent magnet layer or the like may be used instead of the soft magnetic layer.
【００１３】次いで、同図（Ｂ）に示すごとく、ＭＲ層
１３上にレジスト１４を塗布してパターニングする。こ
の状態でエッチングを行った後にレジスト１４を除去す
ることによって、同図（Ｃ）に示すごとく個々のＭＲヘ
ッド部が分離形成される。Next, as shown in FIG. 1B, a resist 14 is applied on the MR layer 13 and patterned. By etching in this state and then removing the resist 14, individual MR head portions are separately formed as shown in FIG.
【００１４】次いで、同図（Ｄ）に示すようにレジスト
１５を塗布してパターニングする。この状態で、逆スパ
ッタ等によりＭＲ層１３の表面をクリーニングする。次
いで、同図（Ｅ）に示すように、この上にＦｅＭｎの反
強磁性体層１６の成膜を行った後、レジスト１５を除去
してリフトオフ法による反強磁性体層１６のパターニン
グが行われる。この状態が同図（Ｆ）に示されている。Next, as shown in FIG. 3D, a resist 15 is applied and patterned. In this state, the surface of the MR layer 13 is cleaned by reverse sputtering or the like. Then, as shown in FIG. 6E, after the antiferromagnetic material layer 16 of FeMn is formed thereon, the resist 15 is removed and the antiferromagnetic material layer 16 is patterned by the lift-off method. Be seen. This state is shown in FIG.
【００１５】レジスト１５を有機溶剤等で溶解して反強
磁性体層１６のパターニングを終了した後、洗浄工程が
実施される。本実施例においては、洗浄に用いられる純
水等にＮａＯＨ、Ｎａ2 ＣＯ3 等を加えて実質的にｐＨ
７〜ｐＨ１０の弱アルカリ性の洗浄水を作成し、これに
よって洗浄を行っている。弱アルカリ性の洗浄水によれ
ば、反強磁性体層１６であるＦｅＭｎの腐食を防止する
ことができる。洗浄に用いられる純水等にＮＨ3 等の可
溶性ガスをバブリングしてｐＨ７〜ｐＨ１０の弱アルカ
リ性の洗浄水を作成し、これによって洗浄を行ってもよ
い。After the resist 15 is dissolved in an organic solvent or the like to finish the patterning of the antiferromagnetic material layer 16, a cleaning step is carried out. In the present embodiment, the pH is substantially adjusted by adding NaOH, Na 2 CO 3 or the like to pure water used for cleaning.
A weak alkaline washing water having a pH of 7 to 10 is prepared, and washing is performed using this. The weak alkaline cleaning water can prevent corrosion of FeMn that is the antiferromagnetic layer 16. It is also possible to bubble a soluble gas such as NH 3 into pure water or the like used for cleaning to prepare weakly alkaline cleaning water having a pH of 7 to 10, and perform cleaning with this.
【００１６】次いで、同図（Ｇ）に示すように、反強磁
性体層１６上にＷ等の電極層１７を成膜及びパターニン
グする。この電極層１７の間の領域が、ＭＲ素子のトラ
ック幅Ｔｗに対応する領域であることは周知の通りであ
る。電極層１７のパターニングの後にも洗浄が行われ
る。この洗浄工程においても、弱アルカリ性の洗浄水に
よって洗浄を行えば、反強磁性体層１６はもちろんのこ
と電極層１７を構成するＷの純水による腐食や溶解をも
防止できる。Then, as shown in FIG. 3G, an electrode layer 17 of W or the like is formed and patterned on the antiferromagnetic layer 16. It is well known that the region between the electrode layers 17 corresponds to the track width Tw of the MR element. Cleaning is also performed after the patterning of the electrode layer 17. Also in this cleaning step, if cleaning is performed with weak alkaline cleaning water, it is possible to prevent corrosion and dissolution of not only the antiferromagnetic material layer 16 but also W that constitutes the electrode layer 17 by pure water.
【００１７】なお、同図（Ｅ）に示す反強磁性体層１６
の成膜の後、電極層１７を連続成膜してからレジスト１
５を除去するように構成すれば、反強磁性体層１６が空
気中に直接さらされることもないし、洗浄工程も１回で
済むからより好ましい。The antiferromagnetic material layer 16 shown in FIG.
Of the resist 1 after the electrode layer 17 is continuously formed after the film formation of
5 is more preferable because the antiferromagnetic material layer 16 is not directly exposed to the air and the cleaning step is performed only once.
【００１８】図２は、本発明の他の実施例におけるＭＲ
ヘッドの製造工程をＡＢＳ面側から概略的に表した工程
図である。FIG. 2 shows an MR according to another embodiment of the present invention.
FIG. 6 is a process diagram schematically showing the manufacturing process of the head from the ABS surface side.
【００１９】同図（Ａ）〜（Ｃ）の工程は、図１の
（Ａ）〜（Ｃ）の工程と全く同じである。即ち、ウエハ
上に形成されたＳｉＯ2 、Ａｌ2 Ｏ3 等による絶縁層２
０上に、ＮｉＦｅＲｈ、ＮｉＦｅＣｒ、ＣｏＺｒＭｏ等
の軟磁性体層（ＳＡＬ）２１と、Ｔｉ、Ｔａ等の非磁性
層（ＭＳＬ）２２と、ＮｉＦｅ（パーマロイ）等のＭＲ
層２３とをこの順序で連続的に成膜する。次いで、同図
（Ｂ）に示すごとく、ＭＲ層２３上にレジスト２４を塗
布してパターニングする。この状態でエッチングを行っ
た後にレジスト２４を除去することによって、同図
（Ｃ）に示すごとく個々のＭＲヘッド部が分離形成され
る。The steps of FIGS. 1A to 1C are exactly the same as the steps of FIGS. 1A to 1C. That is, the insulating layer 2 made of SiO 2 , Al 2 O 3 or the like formed on the wafer
0, a soft magnetic layer (SAL) 21 such as NiFeRh, NiFeCr, and CoZrMo, a nonmagnetic layer (MSL) 22 such as Ti and Ta, and an MR such as NiFe (permalloy).
The layer 23 and the layer 23 are continuously formed in this order. Next, as shown in FIG. 3B, a resist 24 is applied on the MR layer 23 and patterned. By etching in this state and then removing the resist 24, individual MR head portions are formed separately as shown in FIG.
【００２０】次いで同図（Ｄ）に示すごとく、この上に
ＦｅＭｎの反強磁性体層２５の成膜を行った後、同図
（Ｅ）に示すようにレジスト２６を塗布してパターニン
グする。この状態で同図の矢印２７に示すようにイオン
ミリングを行う。同図（Ｆ）は、イオンミリング後の状
態を示している。Then, as shown in FIG. 3D, an FeMn antiferromagnetic material layer 25 is formed thereon, and then a resist 26 is applied and patterned as shown in FIG. In this state, ion milling is performed as shown by an arrow 27 in the figure. FIG. 6F shows the state after ion milling.
【００２１】次いで同図（Ｇ）に示すように、レジスト
２６を有機溶剤等で溶解して反強磁性体層２５のパター
ニングを終了した後、洗浄工程が実施される。本実施例
においても、洗浄に用いられる純水等にＮａＯＨ、Ｎａ
2 ＣＯ3 等を加えて実質的にｐＨ７〜ｐＨ１０の弱アル
カリ性の洗浄水を作成し、これによって洗浄を行ってい
る。弱アルカリ性の洗浄水によれば、反強磁性体層２５
であるＦｅＭｎの腐食を防止することができる。洗浄に
用いられる純水等にＮＨ3 等の可溶性ガスをバブリング
してｐＨ７〜ｐＨ１０の弱アルカリ性の洗浄水を作成
し、これによって洗浄を行ってもよいことも前述の実施
例の場合と同じである。Then, as shown in FIG. 4G, after the resist 26 is dissolved with an organic solvent or the like to finish the patterning of the antiferromagnetic material layer 25, a cleaning step is carried out. Also in this embodiment, NaOH, Na
2 CO 3 or the like is added to prepare weak alkaline washing water having a pH of 7 to 10, and washing is performed by this. According to the weak alkaline washing water, the antiferromagnetic material layer 25
It is possible to prevent corrosion of FeMn. As in the case of the above-described embodiment, it is also possible to bubble weak water such as NH 3 into pure water used for cleaning to create weakly alkaline cleaning water having a pH of 7 to 10, and to perform cleaning with this. is there.
【００２２】次いで、同図（Ｈ）に示すように、反強磁
性体層２５上にＷ等の電極層２８を成膜及びパターニン
グする。電極層２８のパターニングの後にも洗浄が行わ
れる。この洗浄工程においても、弱アルカリ性の洗浄水
によって洗浄を行えば、反強磁性体層２５はもちろんの
こと電極層２８を構成するＷの純水による腐食をも防止
できる。Next, as shown in FIG. 3H, an electrode layer 28 of W or the like is formed and patterned on the antiferromagnetic layer 25. Cleaning is also performed after the patterning of the electrode layer 28. Also in this cleaning step, if cleaning is performed with weak alkaline cleaning water, it is possible to prevent corrosion of the W constituting the electrode layer 28 as well as the antiferromagnetic material layer 25 by pure water.
【００２３】以上の実施例は、ウエハ状態における薄膜
集積工程での洗浄、即ちＭＲ層上に反強磁性体層を積層
した後に行われる洗浄に弱アルカリ性洗浄水を用いるも
のであるが、集積工程後にウエハをバー状態に切り出し
てスライダ加工する際、又は個々のスライダに分離した
後の最終的な洗浄工程においても弱アルカリ性洗浄水を
用いることにより、反強磁性体層であるＦｅＭｎはもち
ろん、ＡＢＳ面に露出した金属層の腐食を防止すること
ができる。The above embodiment uses weak alkaline cleaning water for cleaning in the thin film integration process in a wafer state, that is, cleaning performed after the antiferromagnetic material layer is laminated on the MR layer. By using weak alkaline cleaning water also in the case where the wafer is cut into bars and processed into sliders, or in the final cleaning step after separating into individual sliders, FeMn, which is the antiferromagnetic material layer, as well as ABS is used. Corrosion of the metal layer exposed on the surface can be prevented.
【００２４】実際に、精密研磨後のスライダについて、
純水で洗浄した場合と弱アルカリ性洗浄水で洗浄した場
合とを比較した。前者の場合はＦｅＭｎの腐食が認めら
れ、再生波形にバルクハウゼンノイズが多く含まれてい
たが、後者の場合はＦｅＭｎの腐食が全くなく、再生波
形にバルクハウゼンノイズは存在しなかった。Actually, for the slider after precision polishing,
The case of washing with pure water and the case of washing with weak alkaline washing water were compared. In the former case, corrosion of FeMn was recognized, and the reproduced waveform contained a large amount of Barkhausen noise. In the latter case, however, FeMn was not corroded at all and the reproduced waveform did not contain Barkhausen noise.
【００２５】[0025]
【発明の効果】以上詳細に説明したように本発明によれ
ば、ＭＲ層とこのＭＲ層上に積層された反強磁性体層と
を有するＭＲヘッドの製造における洗浄工程で弱アルカ
リ性の洗浄水を使用しているため、反強磁性体膜である
ＦｅＭｎの溶解、腐食の発生を防止することができる。
その結果、反強磁性体膜によるノイズ抑制効果が低減す
るような不都合がなく、また、反強磁性体膜自体がＭＲ
層から剥れてしまって歩留が悪化するようなこともな
い。As described in detail above, according to the present invention, weak alkaline washing water is used in the washing process in the manufacture of an MR head having an MR layer and an antiferromagnetic material layer laminated on the MR layer. Since Fe is used, it is possible to prevent dissolution and corrosion of FeMn, which is an antiferromagnetic film.
As a result, there is no inconvenience that the noise suppression effect of the antiferromagnetic material film is reduced, and the antiferromagnetic material film itself is MR
It does not peel off from the layers and the yield does not deteriorate.
【図１】本発明の一実施例におけるＭＲヘッドの製造工
程の一部をＡＢＳ側から概略的に表した工程図である。FIG. 1 is a process diagram schematically showing a part of the manufacturing process of an MR head in one embodiment of the present invention from the ABS side.
【図２】本発明の他の実施例におけるＭＲヘッドの製造
工程の一部をＡＢＳ側から概略的に表した工程図であ
る。FIG. 2 is a process diagram schematically showing a part of the manufacturing process of the MR head in another example of the invention from the ABS side.
１０、２０ 絶縁層 １１、２１ 軟磁性体層 １２、２２ 非磁性層 １３、２３ ＭＲ層 １４、１５、２４、２６ レジスト １６、２５ 反強磁性体層 １７、２８ 電極層 10, 20 Insulating layer 11, 21 Soft magnetic layer 12, 22 Nonmagnetic layer 13, 23 MR layer 14, 15, 24, 26 Resist 16, 25 Antiferromagnetic layer 17, 28 Electrode layer
Claims (3)
積層された反強磁性体層とを有する磁気抵抗効果ヘッド
を製造する方法であって、洗浄工程では弱アルカリ性の
洗浄水を用いて洗浄を行うことを特徴とする磁気抵抗効
果ヘッドの製造方法。1. A method of manufacturing a magnetoresistive effect head having a magnetoresistive effect layer and an antiferromagnetic layer laminated on the magnetoresistive effect layer, wherein weak cleaning water is used in the cleaning step. A method of manufacturing a magnetoresistive effect head, comprising:
抵抗効果層上に反強磁性体層を積層した後に行われる洗
浄工程であることを特徴とする請求項１に記載の製造方
法。2. The manufacturing method according to claim 1, wherein the cleaning step is a cleaning step performed after an antiferromagnetic material layer is laminated on the magnetoresistive effect layer in the integration step.
加工工程において行われる洗浄工程であることを特徴と
する請求項１又は２に記載の製造方法。3. The manufacturing method according to claim 1, wherein the cleaning step is a cleaning step performed in a slider processing step after the integration step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5165950A JPH076330A (en) | 1993-06-14 | 1993-06-14 | Production of magneto-resistance effect head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5165950A JPH076330A (en) | 1993-06-14 | 1993-06-14 | Production of magneto-resistance effect head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH076330A true JPH076330A (en) | 1995-01-10 |
Family
ID=15822102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5165950A Pending JPH076330A (en) | 1993-06-14 | 1993-06-14 | Production of magneto-resistance effect head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH076330A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761010A (en) * | 1995-08-31 | 1998-06-02 | Fujitsu Limited | Magnetoresistive head, manufacturing method of the head and magnetic recording/reproducing drive |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53121006A (en) * | 1977-03-24 | 1978-10-23 | Henkel Kgaa | Method of washing metal by spray |
| JPH0567314A (en) * | 1991-09-09 | 1993-03-19 | Hitachi Ltd | Manufacture of magneto-resistance effect type head |
| JPH0569560A (en) * | 1991-09-12 | 1993-03-23 | Seiko Epson Corp | Method for washing wire dot head of printer |
-
1993
- 1993-06-14 JP JP5165950A patent/JPH076330A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53121006A (en) * | 1977-03-24 | 1978-10-23 | Henkel Kgaa | Method of washing metal by spray |
| JPH0567314A (en) * | 1991-09-09 | 1993-03-19 | Hitachi Ltd | Manufacture of magneto-resistance effect type head |
| JPH0569560A (en) * | 1991-09-12 | 1993-03-23 | Seiko Epson Corp | Method for washing wire dot head of printer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761010A (en) * | 1995-08-31 | 1998-06-02 | Fujitsu Limited | Magnetoresistive head, manufacturing method of the head and magnetic recording/reproducing drive |
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