JPH0758721B2 - Pressure contact type semiconductor device - Google Patents

Description

The present invention relates to a high-power pressure contact type semiconductor device, and more particularly to a semiconductor element mounting structure.

[Conventional technology]

Conventionally, this type of semiconductor device has been constructed as shown in FIG. FIG. 2 is a side sectional view showing a high-power pressure contact type diode. In FIG. 2, reference numeral 1 indicates an anode as a first main electrode, and this anode 1 is a case portion for housing a diode element described later. 1a and a screw portion 1c formed with an electrode surface 1b connected to the diode element.
2 is an element, and this element 2 is a molybdenum plate having an aluminum layer 2a for alloy formed on the upper surface as shown in FIG.
2b and a diode element 2c fixed to the alloy aluminum layer 2a, and is installed in the case portion 1a of the anode 1. The diode element 2c is a molybdenum plate 2b.
The P layer 2d is formed on the side, the N layer 2e is formed on the upper side of the P layer 2d, the peripheral side portion is beveled and sealed by the passivation 2f, and the aluminum electrode 2g is formed on the upper surface. Has been formed. Reference numeral 4 is a cathode rod as a second main electrode, and an electrode surface 4a formed at the lower end portion thereof is in contact with a heat compensating cathode molybdenum plate 5 provided on the aluminum electrode 2g of the diode element 2c. Reference numeral 6 denotes a disc spring for pressing the electrode surface 4a of the cathode rod 4 against the heat-compensating cathode molybdenum plate 5, which is inside the case portion 1a of the anode 1 and above the electrode surface 4a of the cathode rod 4 and the case. It is mounted by means of plain washers 7 and 8 and insulating Maikawa washers 9a and 9b between itself and a locking piece 1d formed at the upper end of the portion 1a. 10 is a ceramic seal which is welded to the anode 1 to form an insulating cylinder.

In the pressure contact type diode configured as described above, the current flows from the anode 1 to the cathode rod 4 depending on the polarity of the diode element 2c.
In order to obtain a diode which has a polarity opposite to that which flows toward the anode 1, that is, a current flows from the cathode rod 4 to the anode 1, as shown in FIG. An N layer 2e is formed on the N layer 2e, and a P layer 2d is formed on the upper side of the N layer 2e to form a diode element having a polarity different from that of the diode element. By using this diode element, Obtained a diode with opposite polarity.

[Problems to be solved by the invention]

However, in order to obtain two types of pressure contact type diodes with different polarities, it is necessary to manufacture two types of diode elements with different polarities, which causes a problem that the manufacturing cost increases.

[Means for solving problems]

A pressure contact type semiconductor device according to the present invention has an opening portion that covers a peripheral portion of a semiconductor element and has a first main electrode and a second main electrode inserted therein, and is entirely formed of an insulating material. And a cylindrical body that faces the inside of the case portion of the first main electrode and covers the periphery of the spring member that biases the second main electrode toward the semiconductor element. At the same time, an insulating member that covers the periphery of the second main electrode is attached to a portion of the second main electrode that corresponds to the spring member.

[Action]

Since the guide ring insulates a portion of the semiconductor element other than the contact surface with the first and second main electrodes, the polarity of the semiconductor device can be changed by reversing the semiconductor element.

〔Example〕

Hereinafter, the configuration and the like will be described in detail with reference to the embodiments shown in the drawings.

FIG. 1 (a, b) is a side sectional view showing a pressure contact type diode according to the present invention. In FIG. 1 (a) and (b), diode elements are inverted and mounted so as to have different polarities. There is. In the figure, the same or equivalent members as those in the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted. In the figure, reference numeral 11 is a guide ring for fixing the element 2 and the heat compensating cathode molybdenum plate 5 and insulating the case 1a of the anode 1 from the guide ring 11. The guide ring 11 is fitted inside the case 1a. A cylindrical portion 11a as a cylindrical body that is inserted and covers the periphery of the disc spring 6, and a peripheral surface of the element 2 and an electrode surface 1b of the anode 1 and an electrode surface of the cathode rod 4.
4a and a convex portion 11c forming an opening portion 11b into which the element 4a is inserted, and the entire element is integrally formed by an insulating material such as fluororesin, fluororubber, silicon rubber or mica. It is divided into two parts along the axial direction for easy mounting. A protrusion 11d is formed on the upper end of the guide ring 11 so as to fit with the locking piece 1d formed on the upper end of the case 1a of the anode 1 and contact the flat washer 8 inside. Reference numeral 12 is an insulating ring for improving the insulating property between the cathode rod 4 and the anode 1, which is formed of an insulating material and is attached to the cathode rod 4.

In this embodiment, the diode element of the element 2
2c is P on the molybdenum plate 2b side as shown in FIG.
A layer 2d is used. 12 is an insulating ring as an insulating member according to the present invention.
Is attached to the portion of the cathode rod 4 that penetrates the disc spring 6 so as to cover the periphery of the cathode rod 4.

Therefore, as shown in FIG. 1 (a), the element 2
When the molybdenum plate 2b is attached to the guide ring 11 so that the molybdenum plate 2b contacts the electrode surface 1b of the anode 1, a current flows from the anode 1 to the cathode rod 4, and as shown in FIG. 1 (b),
If this element 2 is inverted and attached to the guide ring 11, current will flow from the cathode rod 4 to the anode 1.
At this time, the heat compensating cathode molybdenum plate 5 is the electrode surface of the anode 1.
It goes without saying that it is interposed between 1b and the diode element 2c. Therefore, the element 2 has a guide ring 11
As a result, the parts other than the contact surface between the electrode surface 1b of the anode 1 and the electrode surface 4a of the cathode rod 4 are insulated, so that the case portion 1a of the anode 1 and the molybdenum plate of the element 2 are reversed even if the element 2 is inverted. Since the elements 2b do not come into contact with each other, the polarity of the semiconductor device can be changed by reversing the element 2.

Further, the cylindrical portion 11a of the guide ring 11 is the case portion 1 of the anode 1.
Since the insulating ring 12 is inserted into the inside of a and the insulating ring 12 is attached to the cathode rod 4, it is possible to completely insulate the inner peripheral surface of the case portion 1a of the anode 1 from the cathode rod 4.

Further, in this embodiment, the diode element of the element 2 is used.
2c shows an example in which the P layer 2d is formed on the molybdenum plate 2b side, but the same effect can be obtained by using a diode element having the opposite polarity.

〔The invention's effect〕

As described above, according to the present invention, the semiconductor element is provided with an opening that covers the peripheral edge and has the first main electrode and the second main electrode inserted therein, and is entirely formed of an insulating material. A guide ring, which is provided integrally with the guide ring and covers the periphery of the spring member which faces the case portion of the first main electrode and biases the second main electrode toward the semiconductor element. Since the insulating member covering the periphery of the second main electrode is attached to the portion of the second main electrode corresponding to the spring member, the guide ring is provided on the semiconductor element other than the contact surface with the first and second main electrodes. Since the parts are insulated, the polarity of the semiconductor device can be changed by reversing and mounting the semiconductor element.

Therefore, it is only necessary to manufacture one kind of semiconductor element for two kinds of semiconductor devices, so that the manufacturing cost of the semiconductor device can be kept low. Further, when assembling a semiconductor device, the number of semiconductor elements conventionally manufactured in two types is reduced to one type, so that the process of assembling the semiconductor device is simplified and the manufacturing period is shortened. Further, the spring member that biases the second main electrode toward the semiconductor element is insulated from the case portion of the first main electrode by the tubular body of the guide ring and is insulated from the second main electrode. Since it is insulated by the member, the insulating property of the semiconductor device whose polarity can be easily changed can be enhanced.

[Brief description of drawings]

1 (a, b) is a side sectional view showing a pressure contact type diode according to the present invention, FIG. 2 is a side sectional view showing a conventional pressure contact type diode, and FIGS. 3 and 4 are semiconductors. It is a figure for demonstrating the polarity of an element. 1 ... Anode, 1b ... Case part, 2 ... Element, 4 ...
… Cathode, 11 …… guide ring, 11b …… opening.

Claims (1)

[Claims] 1. A pressure contact type semiconductor device in which a second main electrode is pressed and brought into pressure contact with a semiconductor element housed in a case portion of a first main electrode by a spring member in the case portion. A guide ring that covers the peripheral edge of the first main electrode and the second main electrode and has an opening into which the whole is formed of an insulating material. An insulating member that covers the periphery of the spring member is integrally provided in the case portion of the one main electrode, and an insulating member that covers the periphery of the second main electrode is provided at a portion of the second main electrode corresponding to the spring member. A pressure contact type semiconductor device, which is mounted.