JPH0756070B2 - Sputtering method - Google Patents
Sputtering methodInfo
- Publication number
- JPH0756070B2 JPH0756070B2 JP23941587A JP23941587A JPH0756070B2 JP H0756070 B2 JPH0756070 B2 JP H0756070B2 JP 23941587 A JP23941587 A JP 23941587A JP 23941587 A JP23941587 A JP 23941587A JP H0756070 B2 JPH0756070 B2 JP H0756070B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- metal oxide
- film
- substrate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、金属酸化物のスパッタ成膜方法に関し、バイ
アス．スパッタにより、段差部を有する基板に対し、段
差部を覆うように金属酸化物膜を形成する場合に、アル
ゴンガス中に体積比で10％を超え25％以下の酸素を含む
雰囲気中でスパッタすることにより、段差付近に組成の
異なる異相膜が生じるのを防止できるようにしたもので
ある。DETAILED DESCRIPTION OF THE INVENTION <Industrial Field of Application> The present invention relates to a method for forming a metal oxide film by sputtering. When a metal oxide film is formed on a substrate having a step portion by sputtering so as to cover the step portion, the sputtering is performed in an atmosphere containing oxygen of 10% to 25% by volume in argon gas. As a result, it is possible to prevent the formation of a heterogeneous film having a different composition near the step.
〈従来の技術〉 例えば、特開昭61-99911号公報に記載される如く、薄膜
磁気ヘッドにおいては、基板の上に形成されているポー
ル部分を、金属酸化物膜でなる保護膜で覆う場合、基板
とポール部分との段差部のステップ．カバリング作用を
高めるため、バイアス．スパッタ成膜方法がとられる。<Prior Art> For example, as described in JP-A-61-99911, in a thin film magnetic head, a pole portion formed on a substrate is covered with a protective film made of a metal oxide film. , Step of the step between the substrate and the pole part. Biased to enhance the covering effect. A sputter film forming method is adopted.
第２図はバイアス．スパッタ装置の構成を示す図で、１
はターゲット、２は基板ホルダ、３及び４はマッチング
回路、５はRF電源、６はバイアス用RF電源、７は減圧Ar
ガスを導入したチャンバ、８は薄膜ヘッド素子等のよう
にスパッタ成膜面に段差部を有する基板である。ターゲ
ット１は例えばAl2O3、SiO2等の金属酸化物で構成され
る。また、チャンバ７内の雰囲気は、Arガス中に体積比
0.1％〜10％の酸素を含む雰囲気となっている。Figure 2 shows bias. In the figure showing the structure of the sputtering apparatus,
Is a target, 2 is a substrate holder, 3 and 4 are matching circuits, 5 is an RF power supply, 6 is a bias RF power supply, and 7 is a reduced pressure Ar.
A chamber 8 into which a gas is introduced is a substrate having a stepped portion on the sputter film formation surface such as a thin film head element. The target 1 is made of, for example, a metal oxide such as Al 2 O 3 and SiO 2 . Further, the atmosphere in the chamber 7 has a volume ratio of Ar gas.
The atmosphere contains 0.1% to 10% oxygen.
基板８を基板ホルダ２上に設置し、チャンバ７内のArガ
ス圧を適当に保ち、RF電源５、６からマッチング回路
３、４を通して、ターゲット１に負の高電圧を印加する
と同時に、基板ホルダ２にもバイアス電圧を印加する。
これにより、チャンバ７内でプラズマ放電が発生し、Ar
+がターゲット１の負電位に引かれてその表面に衝突
し、ターゲット１の表面の金属酸化物が叩き出される。
叩き出された金属酸化物は基板ホルダ２上に設けられた
基板８の表面に付着する。The substrate 8 is placed on the substrate holder 2, the Ar gas pressure in the chamber 7 is appropriately maintained, and a negative high voltage is applied to the target 1 from the RF power sources 5 and 6 through the matching circuits 3 and 4, and at the same time, the substrate holder is pressed. A bias voltage is also applied to 2.
As a result, plasma discharge is generated in the chamber 7 and Ar
The + is attracted to the negative potential of the target 1 and collides with its surface, and the metal oxide on the surface of the target 1 is knocked out.
The tapped metal oxide adheres to the surface of the substrate 8 provided on the substrate holder 2.
ここで、基板ホルダ２の上の基板８も負電位にバイアス
されているから、ターゲット１から叩き出された金属酸
化物が基板８の負電位に引かれて、基板８に先に付着し
ている金属酸化物膜にイオン衝撃を与えて再放出させ
る。これにより、ステップ．カバリング作用が得られ、
段差部のある基板８の表面に対しても、略均一な膜厚の
金属酸化物膜が形成される。Here, since the substrate 8 on the substrate holder 2 is also biased to a negative potential, the metal oxide knocked out from the target 1 is drawn to the negative potential of the substrate 8 and adheres to the substrate 8 first. Ion bombard the metal oxide film to release it again. This causes the step. A covering effect is obtained,
A metal oxide film having a substantially uniform thickness is also formed on the surface of the substrate 8 having a step.
〈発明が解決しようとする問題点〉 ところが、チャンバ７内の雰囲気を、Arガス中に体積比
0.1％〜10％の酸素を含む雰囲気とした従来のスパッタ
成膜方法によると、段差部の付近に、ストイキオメトリ
ー（化学的量論比）の金属酸化物膜と、ストイキオメト
リーよりも酸素濃度の低い金属酸化物膜とが発生するこ
とが分った。第３図は、薄膜磁気ヘッドにおいて、基板
81の上に形成した上下ポール部82、83の上に、Al2O3で
なる保護膜84をバイアス．スパッタによって形成した場
合の断面図をモデル化して示す図である。85はギャップ
層である。図において、ポール部82、83の上の保護膜84
A1はストイキオメトリーに対して酸素濃度の低い金属酸
化物膜となり、その両側の保護膜層84B1、84B2はストイ
キオメトリー（化学的量論比）の金属酸化物膜となり、
保護膜84B1、84B2の外側の保護膜84A2、84A3は、保護膜
84A1と同様に、ストイキオメトリーに対して酸素濃度の
低い金属酸化物膜となり、目視によっても確認できる明
確な境界部（イ）〜（ニ）が発生する。<Problems to be Solved by the Invention> However, the atmosphere in the chamber 7 is mixed with Ar gas in a volume ratio.
According to the conventional sputtering film forming method in which the atmosphere contains 0.1% to 10% oxygen, a metal oxide film having a stoichiometry (stoichiometric ratio) is formed in the vicinity of the step portion, and oxygen is more preferable than the stoichiometry. It was found that a metal oxide film having a low concentration was generated. FIG. 3 shows a substrate of a thin film magnetic head.
A protective film 84 made of Al 2 O 3 is biased on the upper and lower pole portions 82 and 83 formed on 81. It is a figure which models and shows the sectional view in the case of forming by sputtering. 85 is a gap layer. In the figure, a protective film 84 on the pole portions 82 and 83
A 1 is a metal oxide film having a low oxygen concentration against stoichiometry, and protective film layers 84B 1 and 84B 2 on both sides thereof are stoichiometry (stoichiometric ratio) metal oxide films,
The protective films 84A 2 and 84A 3 outside the protective films 84B 1 and 84B 2 are protective films.
Similar to 84A 1 , it becomes a metal oxide film having a low oxygen concentration with respect to stoichiometry, and clear boundaries (a) to (d) are generated which can be visually confirmed.
段差部に上述のような異相膜が発生するのは、段差部で
はバイアス．スパッタ時の再スパッタ作用により、イオ
ン反応が大きくなり、スパッタ雰囲気中の酸素イオンと
の反応が増え、金属酸化物のストイキオメトリーとなる
のに対し、それ以外の領域、つまり、再スパッタ作用を
伴わない部分では、酸素イオンとの反応が少なくなるた
めと推測される。The above-mentioned heterogeneous film is generated in the step portion because of the bias in the step portion. Due to the resputtering action at the time of sputtering, the ionic reaction becomes large and the reaction with oxygen ions in the sputtering atmosphere increases, resulting in stoichiometry of the metal oxide, whereas in other regions, that is, resputtering action It is presumed that the reaction with oxygen ions is reduced in the non-accompanying portion.
上述のように、組成の異なる異相膜が発生すると、その
境界部（イ）〜（ニ）に応力が集中し、研磨加工時など
に境界部（イ）〜（ニ）にクラックが発生したり、剥離
する等の問題を生じ、信頼性が低下する。As described above, when a heterogeneous film having a different composition is generated, stress is concentrated on the boundary portions (a) to (d), and cracks occur at the boundary portions (a) to (d) during polishing or the like. However, problems such as peeling occur and reliability decreases.
〈問題点を解決するための手段〉 上述する従来の問題点を解決するため、本発明は、金属
酸化物をターゲットとして、バイアス．スパッタによ
り、段差部を有する基板に対し、前記段差部を覆うよう
に金属酸化物膜を形成するスパッタ成膜方法において、
アルゴンガス中に体積比で10％を超え25％以下の酸素を
含む雰囲気中でスパッタすることを特徴とする。<Means for Solving Problems> In order to solve the above-described conventional problems, the present invention uses a metal oxide as a target, and a bias. In a sputtering film forming method of forming a metal oxide film on a substrate having a step portion by sputtering to cover the step portion,
It is characterized in that the sputtering is carried out in an atmosphere containing more than 10% and not more than 25% of oxygen in a volume ratio of argon gas.
〈作用〉 アルゴンガス中に体積比で10％を超え25％以下の酸素を
含む雰囲気中で、バイアス．スパッタを行なうと、第１
図に示すように、ポール部82、83等の段差部を含む全領
域で、ストイキオメトリーの金属酸化物膜84が形成でき
る。酸素濃度が体積比25％を超えると、バイアス．スパ
ッタ速度が遅くなり、工業上の利用性が低下する。ま
た、体積比10％以下では従来と同様に異相膜が発生す
る。<Operation> Biased in an atmosphere containing more than 10% and less than 25% by volume of oxygen in argon gas. When sputtering is performed, the first
As shown in the figure, the stoichiometric metal oxide film 84 can be formed in the entire region including the stepped portions such as the pole portions 82 and 83. Bias occurs when the oxygen concentration exceeds 25% by volume. Sputtering speed becomes slow, and industrial utility is reduced. Further, when the volume ratio is 10% or less, a heterophase film is generated as in the conventional case.
本発明は、薄膜磁気ヘッドの保護膜形成に限らず、例え
ば、IC多層配線において、絶縁用金属酸化物膜をバイア
ス．スパッタによって形成する場合等にも適用できる。The present invention is not limited to the formation of a protective film for a thin film magnetic head. It can also be applied to the case of forming by sputtering.
〈発明の効果〉 以上述べたように、本発明は、金属酸化物をターゲット
として、バイアス．スパッタにより、段差部を有する基
板に対し、前記段差部を覆うように金属酸化物膜を形成
するスパッタ成膜方法において、アルゴンガス中に体積
比で10％を超え25％以下の酸素を含む雰囲気中でスパッ
タすることを特徴とするから、段差部を含む全領域で、
ストイキオメトリーの金属酸化物膜を形成し、クラック
が発生したり、剥離する等の問題を生じにくい高信頼度
の金属酸化物スパッタ膜を形成できる。<Effects of the Invention> As described above, according to the present invention, the bias. In a sputtering film-forming method of forming a metal oxide film on a substrate having a step portion by sputtering so as to cover the step portion, an atmosphere containing more than 10% and less than 25% oxygen by volume in argon gas. Since it is characterized by sputtering inside, in the entire area including the step,
It is possible to form a metal oxide film by stoichiometry and form a highly reliable metal oxide sputtered film that is unlikely to cause problems such as cracks or peeling.
第１図は本発明に係るスパッタ成膜方法によって得られ
た金属酸化物膜構成をモデル化して示す断面図、第２図
はバイアス．スパッタ装置の構成を示す図、第３図は従
来のバイアス．スパッタ成膜方法によって得られた金属
酸化物膜の問題点を示す図である。FIG. 1 is a cross-sectional view showing a model of the structure of a metal oxide film obtained by the sputtering film forming method according to the present invention, and FIG. FIG. 3 is a diagram showing the structure of a sputtering apparatus, and FIG. It is a figure which shows the problem of the metal oxide film obtained by the sputtering film-forming method.
Claims (1)
ス．スパッタにより、段差部を有する基板に対し、前記
段差部を覆うように金属酸化物膜を形成するスパッタ成
膜方法において、アルゴンガス中に体積比で10％を超え
25％以下の酸素を含む雰囲気中でスパッタすることを特
徴とするスパッタ成膜方法。1. A bias. Targeting a metal oxide. In a sputtering film forming method of forming a metal oxide film on a substrate having a step portion by sputtering so as to cover the step portion, the volume ratio in argon gas exceeds 10%.
A sputtering film forming method characterized by performing sputtering in an atmosphere containing 25% or less of oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23941587A JPH0756070B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23941587A JPH0756070B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6483655A JPS6483655A (en) | 1989-03-29 |
| JPH0756070B2 true JPH0756070B2 (en) | 1995-06-14 |
Family
ID=17044433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23941587A Expired - Lifetime JPH0756070B2 (en) | 1987-09-22 | 1987-09-22 | Sputtering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0756070B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03107802A (en) * | 1989-09-21 | 1991-05-08 | Res Dev Corp Of Japan | Multilayered film |
| US6322712B1 (en) | 1999-09-01 | 2001-11-27 | Micron Technology, Inc. | Buffer layer in flat panel display |
| US20060289294A1 (en) * | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
| WO2009044474A1 (en) * | 2007-10-04 | 2009-04-09 | Canon Anelva Corporation | Vacuum thin film forming apparatus |
-
1987
- 1987-09-22 JP JP23941587A patent/JPH0756070B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6483655A (en) | 1989-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 13 Free format text: PAYMENT UNTIL: 20080614 |