JPH0747507B2 - Nitride-bonded SiC refractory - Google Patents
Nitride-bonded SiC refractoryInfo
- Publication number
- JPH0747507B2 JPH0747507B2 JP2229588A JP22958890A JPH0747507B2 JP H0747507 B2 JPH0747507 B2 JP H0747507B2 JP 2229588 A JP2229588 A JP 2229588A JP 22958890 A JP22958890 A JP 22958890A JP H0747507 B2 JPH0747507 B2 JP H0747507B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- sic
- refractory
- nitride
- sic refractory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 13
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 30
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- 230000035939 shock Effects 0.000 description 12
- 238000010304 firing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000292 calcium oxide Substances 0.000 description 5
- 235000012255 calcium oxide Nutrition 0.000 description 5
- 239000002734 clay mineral Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011819 refractory material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009739 binding Methods 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 2 O 3 Substances 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- INJRKJPEYSAMPD-UHFFFAOYSA-N aluminum;silicic acid;hydrate Chemical compound O.[Al].[Al].O[Si](O)(O)O INJRKJPEYSAMPD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000010443 kyanite Substances 0.000 description 1
- 229910052850 kyanite Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052604 silicate mineral Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は窒化物結合SiC耐火物に係り、更に詳しくは高
温強度の大きな窒化物結合SiC耐火物に関する。The present invention relates to a nitride-bonded SiC refractory, and more particularly to a nitride-bonded SiC refractory having high strength at high temperature.
［従来の技術及び発明が解決しようとする課題］ 炭化珪素（SiC）耐火物は、優れた耐熱性、耐火性か
ら、工業上重要な地位を占めており、例えば陶磁器焼成
用の棚板、その他の焼成用治具、サヤ等に多用されてい
る。[Prior Art and Problems to be Solved by the Invention] Silicon carbide (SiC) refractory occupies an important industrial position due to its excellent heat resistance and fire resistance. For example, shelf boards for firing ceramics, etc. It is often used for firing jigs and sheaths.
このようなSiC耐火物は、従来、SiC粒子に５〜10重量％
程度の粘土を混合して、混練・成形・焼成し、珪酸塩鉱
物、例えば粘土鉱物によりSiC粒子を結合させることに
より製造されている。しかしながら、このように製造さ
れるSiC耐火物は、耐火度が低い粘土鉱物を粒界結合部
としているため、高温での軟化変形や酸化が生じ易いと
いう問題があった。Such SiC refractories have conventionally been contained in SiC particles in an amount of 5 to 10% by weight.
It is manufactured by mixing clay of a certain degree, kneading, molding, and firing, and binding SiC particles with a silicate mineral, for example, a clay mineral. However, the SiC refractory thus manufactured has a problem that it is apt to undergo softening deformation and oxidation at high temperature because a clay mineral having a low refractory degree is used as a grain boundary bonding portion.
一方、米国特許第2752258号明細書には、SiC粒子にSiを
混合、成形した後、成形体を非酸化性の窒素含有雰囲気
下において焼成することにより、窒化珪素質のSiC耐火
物を製造することが開示されている。このSiC耐火物
は、SiC粒子を窒化珪素からなる結合材により結合させ
たものであり、高温での機械的強度、耐熱衝撃性を向上
させることを目的としたものである。On the other hand, in U.S. Pat.No. 2752258, a silicon nitride SiC refractory is produced by mixing Si in SiC particles, molding, and then firing the molded body in a non-oxidizing nitrogen-containing atmosphere. It is disclosed. This SiC refractory is obtained by bonding SiC particles with a binder made of silicon nitride, and is intended to improve mechanical strength and thermal shock resistance at high temperatures.
しかしながら、米国特許第2752258号明細書に記載の方
法により製造されるSiC耐火物にあっても、高温強度、
耐熱衝撃性等の特性においては未だ満足できるものでは
なかった。However, even in the SiC refractory produced by the method described in U.S. Pat.No. 2752258, high temperature strength,
The properties such as thermal shock resistance were not yet satisfactory.
［課題を解決するための手段］ そこで本発明者は従来公知のSiC耐火物に比し、高温時
における強度が大きく、優れた耐熱衝撃性を有するSiC
耐火物を提供すべく種々検討を行なった結果、本発明に
到達したものである。[Means for Solving the Problems] Therefore, the present inventor has developed a SiC having high strength at high temperature and excellent thermal shock resistance as compared with conventionally known SiC refractories.
As a result of various studies to provide a refractory material, the present invention has been achieved.
即ち、本発明によれば、SiC骨材粒子が60〜90重量％、S
i3N4質及び／又はSi2ON2質の粒界結合部が８〜35重量
％、SiO2、Al2O3、CaO及びFe2O3を含む粒界ガラス質及
び／又は結晶質相が1.0〜15.0重量％、および、金属Si
が0.05〜2.0重量％、からなり、かつカルシウム成分をC
aO換算で0.2〜1.0重量％含有する窒化物結合SiC耐火
物、が提供される。That is, according to the present invention, 60-90 wt% SiC aggregate particles, S
Grain boundary vitreous and / or crystalline containing 8 to 35% by weight of grain boundary bonding part of i 3 N 4 substance and / or Si 2 ON 2 substance, SiO 2 , Al 2 O 3 , CaO and Fe 2 O 3 1.0 to 15.0 wt% phase and metallic Si
Is 0.05 to 2.0% by weight, and the calcium component is C
Provided is a nitride-bonded SiC refractory containing 0.2 to 1.0% by weight in terms of aO.
［作用］ 本発明のSiC耐火物は、SiC骨材粒子、Si3N4質及び／又
はSi2ON2質の粒界結合部、所定成分からなるガラス相、
及び金属Siをそれぞれ所定の割合で含有することに特徴
を有する。[Operation] The SiC refractory of the present invention comprises SiC aggregate particles, Si 3 N 4 and / or Si 2 ON 2 intergranular bond parts, a glass phase composed of predetermined components,
And is characterized by containing metallic Si in predetermined proportions.
このように配合したSiC耐火物は、高温強度が大きく、
しかも耐熱衝撃性にも優れている。The SiC refractory compounded in this way has high strength at high temperature,
Moreover, it has excellent thermal shock resistance.
本発明のSiC耐火物においては、SiC骨材粒子が60〜90重
量％、好ましくは65〜80重量％、Si3N4質及び／又はSi2
ON2質の粒界結合部が８〜35重量％、好ましくは15〜30
重量％、粒界ガラス質及び／又は結晶質相が1.0〜15.0
重量％、好ましくは1.5〜10.0重量％、及び金属Siが0.0
5〜2.0重量％、好ましくは0.10〜0.5重量％、更に好ま
しくは0.2〜0.5重量％の組成を有する。In the SiC refractory of the present invention, the SiC aggregate particles are 60 to 90% by weight, preferably 65 to 80% by weight, Si 3 N 4 substance and / or Si 2
8 to 35% by weight of grain boundary binding part of ON 2 quality, preferably 15 to 30
% By weight, grain boundary vitreous and / or crystalline phase 1.0-15.0
% By weight, preferably 1.5-10.0% by weight, and 0.0% metal Si.
It has a composition of 5 to 2.0% by weight, preferably 0.10 to 0.5% by weight, more preferably 0.2 to 0.5% by weight.
上記組成のうち、本発明では特に金属Siを0.05〜2.0重
量％の範囲で含有させた点に従来にない特徴がある。金
属Siをこの範囲で含有させたため、このSiC耐火物は高
温における特性が向上した。Among the above-mentioned compositions, the present invention has an unprecedented feature in that metal Si is contained in the range of 0.05 to 2.0% by weight. By containing metallic Si in this range, the SiC refractory has improved properties at high temperatures.
ここで金属Siの役割りについは不明な部分が多いが、お
そらくSiがクラックの伝わりを止める役割り（PSZに於
けるＴ→ｍ変態の様な挙動）を果たすものと考えられ
る。しかし、このSiも一定値を超えるとSiO2に変化し易
く不安定な材料になって好ましくないと思われる。There are many unclear points about the role of metallic Si, but it is thought that Si probably plays a role of stopping the propagation of cracks (behavior like T → m transformation in PSZ). However, if this Si also exceeds a certain value, it is likely to change to SiO 2 and become an unstable material, which is not preferable.
金属Siが上記組成範囲を逸脱すると、高温での曲げ強さ
が450kg/cm2未満と小さくなり、また耐熱衝撃性も低下
し、クラック等が生じやすくなる。If the metal Si deviates from the above composition range, the bending strength at high temperature becomes less than 450 kg / cm 2, and the thermal shock resistance also deteriorates, and cracks and the like are likely to occur.
尚、上記組成において、ガラス相中にCaOを0.2〜1.0重
量％含有することは耐酸化特性及び熱衝撃抵抗性、クリ
ストバライトの生成量の制御、ガラス相量の制御の点か
ら好ましい。In the above composition, it is preferable that the glass phase contains 0.2 to 1.0% by weight of CaO from the viewpoint of oxidation resistance and thermal shock resistance, control of the amount of cristobalite produced, and control of the amount of glass phase.
本発明のSiC耐火物は例えば次のように製造される。The SiC refractory material of the present invention is manufactured, for example, as follows.
即ち、SiC骨材粒子に金属Si、及びSiO2、Al2O3、CaO、F
e2O3等を含有する粘土鉱物（ガラス相形成物質）を混合
し、これを所望の形状に成形する。That is, SiC aggregate particles with metallic Si, and SiO 2 , Al 2 O 3 , CaO, F
A clay mineral (glass phase forming substance) containing e 2 O 3 and the like is mixed and shaped into a desired shape.
次に、得られた成形体を窒素含有雰囲気下において焼成
する。ここで、窒素含有雰囲気における窒素の含有割合
としては、90容量％以上が好ましく、99容量％以上が更
に好ましい。Next, the obtained molded body is fired in a nitrogen-containing atmosphere. Here, the content ratio of nitrogen in the nitrogen-containing atmosphere is preferably 90% by volume or more, and more preferably 99% by volume or more.
焼成温度は、その最高保持温度が通常1100〜1500℃の範
囲、好ましくは1300〜1450℃の範囲であり、焼成時間と
しては５〜30hrが適当である。The firing temperature is such that the maximum holding temperature is usually in the range of 1100 to 1500 ° C., preferably 1300 to 1450 ° C., and the firing time is suitably 5 to 30 hours.
本発明の窒化物結合SiC耐火物は、上記のようにして製
造することができるが、上記焼成体に対してさらに酸化
処理を施すことによって耐熱衝撃性等が向上したSiC耐
火物を製造することができる。The nitride-bonded SiC refractory of the present invention can be produced as described above, but by subjecting the fired body to an oxidation treatment to produce a SiC refractory having improved thermal shock resistance and the like. You can
即ち、得られた焼成体を、1100℃以上、好ましくは1200
〜1550℃の温度で酸化処理する。酸化処理は酸素含有雰
囲気下で行なうが、通常大気中で行なう。酸化処理温度
が1100℃未満の場合、耐熱衝撃性等が向上したSiC耐火
物を得ることができない。なお、酸化処理時間は通常１
〜30hrである。That is, the obtained fired body, 1100 ℃ or more, preferably 1200
Oxidize at a temperature of ~ 1550 ℃. The oxidation treatment is performed in an oxygen-containing atmosphere, but usually in the atmosphere. If the oxidation treatment temperature is lower than 1100 ° C, a SiC refractory having improved thermal shock resistance cannot be obtained. The oxidation time is usually 1
~ 30hr.
また、金属Siの量を制御するために、成形体密度の制御
あるいは焼成時間の制御を行なう手段がある。これは母
原料として用いる金属Siの粒度や純度及び母材SiCの粒
度、粘土成分の種類や量などとの関係があり、一概に数
字の規定ができないが、本発明者の実験によれば組成物
Ａを成形体密度Ｂで成形し、焼成条件Ｃで焼結した焼結
体中に残留するSi量が2.0重量％より大になる場合には
成形体密度Ｂの値を大にする。又は、焼成条件Ｃをより
高温で長時間にすることで制御が可能である。Si量が0.
05重量％未満の場合は成形体密度Ｂの値を小にするか焼
成条件Ｃをより低温側、短時間保持にすることで制御で
きる。Further, in order to control the amount of metallic Si, there is a means for controlling the density of the compact or the firing time. This has a relationship with the particle size and purity of the metal Si used as the base material, the particle size of the base material SiC, the type and amount of the clay component, etc., and the number cannot be specified unconditionally, but according to the experiments of the present inventors When the amount of Si remaining in the sintered body obtained by molding the material A with the density B of the molded body and sintering under the firing condition C is larger than 2.0 wt%, the value of the density B of the molded body is increased. Alternatively, it is possible to control the firing condition C at a higher temperature for a longer time. Si amount is 0.
If it is less than 05% by weight, it can be controlled by reducing the value of the compact density B or keeping the firing condition C at a lower temperature for a short time.
［実施例］ 以下、本発明を実施例に基づき更に詳細に説明するが、
本発明はこれらの実施例に限られるものではない。[Examples] Hereinafter, the present invention will be described in more detail with reference to Examples.
The invention is not limited to these examples.
（実施例） 第１表に示す粒度（6Fは3360μｍ以下、65Fは212μｍ以
下を示す）のSiC骨材粒子と、金属Si、及びSiO2、Al
2O3、CaO、Fe2O3等の粘土鉱物を第１表の割合で調合
（ベントナイト、カオリン、カイアナイト、カルシアを
混合し、第１表の組成とした）し、これに水分を添加し
て混練し、所定の板状体に成形した。(Example) SiC aggregate particles having a particle size shown in Table 1 (6F shows 3360 μm or less, 65F shows 212 μm or less), metal Si, and SiO 2 , Al
Clay minerals such as 2 O 3 , CaO and Fe 2 O 3 were mixed in the proportions shown in Table 1 (bentonite, kaolin, kyanite and calcia were mixed to obtain the composition shown in Table 1), and water was added to this. And kneaded to form a plate-shaped body.
この成形体を窒素ガス雰囲気下において、焼成を行なっ
た。The compact was fired in a nitrogen gas atmosphere.
又、No.8〜11、及び16の焼成体については、更に酸化処
理（℃×hr）を施した。Further, the fired bodies of Nos. 8 to 11 and 16 were further subjected to oxidation treatment (° C. × hr).
得られた焼成体の組成、およびその嵩比重、1400℃にお
ける曲げ強度（kg/cm2）、耐熱衝撃性を測定し、第１表
に示した。The composition of the obtained fired body, its bulk specific gravity, bending strength at 1400 ° C. (kg / cm 2 ), and thermal shock resistance were measured and are shown in Table 1.
尚、耐熱衝撃性（ΔＴ）は、焼成体を700⇔室温に繰返
し配置した場合に焼成体にクラックが入るまでの回数に
より示した。The thermal shock resistance (ΔT) was indicated by the number of times until a crack was formed in the fired body when the fired body was repeatedly placed between 700 and room temperature.
第１表に示す結果から明らかなように、特定の組成でし
かも特定範囲量を有する本発明の焼成体は、その範囲外
の焼成体に比して高温における曲げ強度や耐熱衝撃性に
劣ることがわかる。 As is clear from the results shown in Table 1, the fired body of the present invention having a specific composition and a specific range amount is inferior in bending strength at high temperature and thermal shock resistance to a fired body outside the range. I understand.
［発明の効果］ 以上説明したように、本発明の窒化物結合SiC耐火物は
特定組成を有し、夫々特定範囲量を含むものであるた
め、高温強度が大きく、しかも耐熱衝撃性に優れるとい
う利点がある。[Effects of the Invention] As described above, since the nitride-bonded SiC refractory of the present invention has a specific composition and each contains a specific range amount, it has the advantages of high strength at high temperature and excellent thermal shock resistance. is there.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 敏之 愛知県尾張旭市旭ケ丘町旭ケ丘5668番地の 81 (72)発明者 長谷川 勝 岐阜県可児郡御嵩町井尻65番地 (56)参考文献 特開 昭59−146979（ＪＰ，Ａ) 特開 昭63−30366（ＪＰ，Ａ) 特開 昭63−69757（ＪＰ，Ａ) 特開 平１−164763（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiyuki Ito 81, 5668 Asahigaoka, Asahigaoka-cho, Owariasahi-shi, Aichi 81 (72) Inventor, Masaru Hasegawa 65, Ijiri, Mitake-cho, Kani-gun, Gifu (56) References JP 59 -146979 (JP, A) JP 63-30366 (JP, A) JP 63-69757 (JP, A) JP 1-164763 (JP, A)
Claims (1)
％、 SiO2、Al2O3、CaO及びFe2O3を含む粒界ガラス質及び／
又は結晶質相が1.0〜15.0重量％、 および 金属Siが0.05〜2.0重量％、 からなり、かつカルシウム成分をCaO換算で0.2〜1.0重
量％含有することを特徴とする窒化物結合SiC耐火物。1. A SiC aggregate particle of 60 to 90% by weight, a Si 3 N 4 and / or Si 2 ON 2 grain boundary bonding portion of 8 to 35% by weight, SiO 2 , Al 2 O 3 and CaO. And vitreous boundaries containing Fe 2 O 3 and /
Alternatively, a nitride-bonded SiC refractory comprising a crystalline phase of 1.0 to 15.0% by weight and a metal Si of 0.05 to 2.0% by weight, and containing a calcium component of 0.2 to 1.0% by weight in terms of CaO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2229588A JPH0747507B2 (en) | 1990-08-31 | 1990-08-31 | Nitride-bonded SiC refractory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2229588A JPH0747507B2 (en) | 1990-08-31 | 1990-08-31 | Nitride-bonded SiC refractory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04114969A JPH04114969A (en) | 1992-04-15 |
| JPH0747507B2 true JPH0747507B2 (en) | 1995-05-24 |
Family
ID=16894536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2229588A Expired - Lifetime JPH0747507B2 (en) | 1990-08-31 | 1990-08-31 | Nitride-bonded SiC refractory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0747507B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1951486A2 (en) * | 2005-11-07 | 2008-08-06 | The Vanguard Company, Llc | Reverse reaction sintering of si3n4/sic composites |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5459112A (en) * | 1994-09-14 | 1995-10-17 | The Carborundum Company | Reaction-bonded silicon carbide refractory product |
| JP4376579B2 (en) * | 2003-09-09 | 2009-12-02 | 日本碍子株式会社 | Silicon nitride bonded SiC refractory and method for producing the same |
| US7446066B1 (en) * | 2005-11-07 | 2008-11-04 | Jai-Lin Sun | Reverse reaction sintering of Si3N4/SiC composites |
| FR2946642B1 (en) * | 2009-06-10 | 2013-02-08 | Saint Gobain Ct Recherches | REFRACTORY PRODUCT WITH SIAION MATRIX, ALUMINA AND SILICON. |
| JP6572250B2 (en) * | 2017-02-23 | 2019-09-04 | 電化物産株式会社 | Aluminum melt filter and manufacturing method thereof |
| JP7390272B2 (en) * | 2020-09-30 | 2023-12-01 | 日本碍子株式会社 | Setter for firing |
| CN116178026A (en) * | 2022-12-05 | 2023-05-30 | 山西华钠碳能科技有限责任公司 | Sagger for sintering battery material and preparation method and application thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2752258A (en) * | 1955-03-02 | 1956-06-26 | Carborundum Co | Silicon nitride-bonded silicon carbide refractories |
| DE3742862A1 (en) * | 1987-11-23 | 1989-06-01 | Norton Gmbh | FIRE-RESISTANT MATERIAL AND METHOD FOR THE PRODUCTION THEREOF |
-
1990
- 1990-08-31 JP JP2229588A patent/JPH0747507B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1951486A2 (en) * | 2005-11-07 | 2008-08-06 | The Vanguard Company, Llc | Reverse reaction sintering of si3n4/sic composites |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04114969A (en) | 1992-04-15 |
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