JPH07334958A - Magnetic storage device and its production - Google Patents
Magnetic storage device and its productionInfo
- Publication number
- JPH07334958A JPH07334958A JP14527294A JP14527294A JPH07334958A JP H07334958 A JPH07334958 A JP H07334958A JP 14527294 A JP14527294 A JP 14527294A JP 14527294 A JP14527294 A JP 14527294A JP H07334958 A JPH07334958 A JP H07334958A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- magnetic
- magnetic storage
- storage medium
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気ディスク装置やフ
ロッピイディスク装置、磁気テープ装置などの磁気記憶
装置とその製造方法に関し、特に磁気ヘッドと磁気記憶
媒体との摺動面に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic storage device such as a magnetic disk device, a floppy disk device and a magnetic tape device and a method for manufacturing the same, and more particularly to a sliding surface between a magnetic head and a magnetic storage medium.
【０００２】近年、情報量の増大に伴い、特に磁気ディ
スク装置に対して、より一層の高密度、大容量化が切望
されている。この大容量化、高密度化を促進する上で、
現在のキーテクノロジーとなっているのが、ヘッド・媒
体系の高性能化とヘッド・媒体間の浮上隙間の低減であ
る。実際、各メーカでは、ヘッド・媒体系で磁気抵抗効
果型ヘッドや垂直記録用ヘッド・媒体の新規適用を図る
一方、ヘッドクラッシュに強い耐久性に優れた装置が求
められている。In recent years, as the amount of information has increased, there has been a strong demand for higher density and larger capacity, especially for magnetic disk devices. In promoting this large capacity and high density,
The key technologies at present are the high performance of the head / medium system and the reduction of the flying gap between the head and medium. In fact, each manufacturer is trying to newly apply a magnetoresistive head or a perpendicular recording head / medium in a head / medium system, while demanding an apparatus having excellent durability against a head crash.
【０００３】[0003]
【従来の技術】図６は磁気ディスク装置の内部構造の全
容を示す平面図であり、磁気ディスクＭが高速回転して
いる状態で、その半径方向に磁気ヘッドｈが移動してシ
ーク動作し、情報の記録／再生が行なわれる。2. Description of the Related Art FIG. 6 is a plan view showing the entire internal structure of a magnetic disk device. When a magnetic disk M is rotating at a high speed, a magnetic head h moves in the radial direction of the magnetic disk M to perform a seek operation. Information recording / reproduction is performed.
【０００４】この磁気ヘッドｈの位置で磁気ディスクＭ
を切断し拡大すると、図７のようになる。薄膜型の磁気
ディスクＭにおいて、１はアルミニウムやガラスなどの
非磁性体からなる基板であり、その表面に、機械的強度
を上げるためにNiＰめっき層２を形成した状態で、Co合
金の水平配向性を高めるためのCr下地層３を1000Å程度
スパッタ成膜してある。At the position of the magnetic head h, the magnetic disk M
Fig. 7 shows the result of cutting and enlarging. In the thin-film magnetic disk M, 1 is a substrate made of a non-magnetic material such as aluminum or glass, and a NiP plating layer 2 is formed on the surface of the substrate to increase mechanical strength. The Cr underlayer 3 for improving the property is formed by sputtering by about 1000Å.
【０００５】そして、CoCrTaまたはCoNiCrなどの磁性材
を５00Å程度スパッタして薄膜磁性膜４を形成した後、
保護膜５としてカーボンを３00Å程度スパッタし、最後
にパーフロロポリエーテルなどのようなフッ素系の潤滑
層６を数十Å程度塗布して、完成する。Then, after a magnetic material such as CoCrTa or CoNiCr is sputtered for about 500 Å to form the thin film magnetic film 4,
As the protective film 5, carbon is sputtered for about 300 Å, and finally, a fluorine-based lubricating layer 6 such as perfluoropolyether is applied for about several tens of Å to complete the process.
【０００６】この磁気ディスクＭを矢印a1方向に高速回
転させると、流入斜面Ｓから流入した空気流によって磁
気ヘッドスライダ７が微小量浮上するので、摺動しない
状態で、電磁変換素子８によって、磁気ディスクＭの磁
性膜４に情報の記録／再生を行なえる。When this magnetic disk M is rotated at a high speed in the direction of arrow a 1 , the magnetic head slider 7 is slightly floated by the airflow flowing in from the inflow slope S, so that the electromagnetic conversion element 8 allows the magnetic head slider 7 to slide without sliding. Information can be recorded / reproduced on / from the magnetic film 4 of the magnetic disk M.
【０００７】磁気ヘッドのスライダ７は、ジンバル１０
を介してスプリングアーム１１に取り付けられ、キャリ
ッジ１２の駆動アーム１３でシーク動作が行なわれる。
このように、機構の簡便さから、装置の起動・停止時に
はコアスライダが浮上せず摺動するＣＳＳ(Cotact Star
t Stop )方式が普及している。The slider 7 of the magnetic head includes a gimbal 10
The drive arm 13 of the carriage 12 carries out a seek operation.
Thus, due to the simplicity of the mechanism, the CSS (Cotact Star) in which the core slider slides without flying when the device is started and stopped.
t Stop) method is popular.
【０００８】図７の磁気ヘッドはモノリシック型である
のに対し、図８は薄膜磁気ヘッドであり、ヘッド素子部
１４が薄膜技術で形成され、かつAl2O3 などの保護膜で
覆われている。スライダ７は、摺動面の左右に浮上レー
ル１５、１６を有しており、そのヘッド素子部１４と反
対側に、空気流を取り込む流入斜面１５ｓ、１６ｓが形
成されている。While the magnetic head of FIG. 7 is a monolithic type, FIG. 8 is a thin film magnetic head in which the head element portion 14 is formed by a thin film technique and is covered with a protective film such as Al 2 O 3. There is. The slider 7 has levitation rails 15 and 16 on the left and right of the sliding surface, and inflow slopes 15s and 16s for taking in the air flow are formed on the side opposite to the head element portion 14 thereof.
【０００９】一方、磁気ディスク装置の大容量化、小型
化の要求に伴い、磁気抵抗効果型の磁気ヘッド（ＭＲヘ
ッド）の開発が進められている。ＭＲヘッドの場合は、
再生ヘッドとしてＭＲ素子が形成され、図８の通常の薄
膜磁気ヘッドと同様にＣＳＳ型であるのに対し、フロッ
ピイディスク装置や磁気テープ装置などの場合は、磁気
ヘッドが磁気記憶媒体と常時摺動接触する。On the other hand, in response to the demand for larger capacity and smaller size of the magnetic disk device, a magnetoresistive effect type magnetic head (MR head) is being developed. In case of MR head,
An MR element is formed as a reproducing head and is of a CSS type like the normal thin film magnetic head of FIG. 8, whereas in the case of a floppy disk device or a magnetic tape device, the magnetic head is constantly slid on the magnetic storage medium. Make dynamic contact.
【００１０】ＭＲヘッドや薄膜磁気ヘッドの場合は、ヘ
ッドクラッシュによる素子の劣化を防止して耐久性を向
上する必要があるため、本発明の出願人が先に提案した
特願平５−２７８９３７号のように、磁気ディスクの表
面に水素含有カーボン膜などの高硬度の保護膜を積層
し、その上に潤滑剤を積層することや、特願平５−２５
１１１５号のように、Al2O3-TiC 製の磁気ヘッドスライ
ダの少なくとも摺動面側に水素含有炭素膜を積層するこ
とが試みられている。In the case of an MR head or a thin film magnetic head, it is necessary to prevent deterioration of the element due to a head crash and improve the durability, so that the applicant of the present invention has previously proposed Japanese Patent Application No. 5-278937. As described above, a high hardness protective film such as a hydrogen-containing carbon film is laminated on the surface of the magnetic disk, and a lubricant is laminated on the protective film.
As in No. 1115, it has been attempted to stack a hydrogen-containing carbon film on at least the sliding surface side of a magnetic head slider made of Al 2 O 3 —TiC.
【００１１】[0011]
【発明が解決しようとする課題】前記のようにＣＳＳ方
式が採用された場合、磁気ディスク装置の起動・停止時
に磁気ヘッドと磁気ディスク面とが摺動するため、磁気
ディスク面の潤滑剤やカーボン保護膜が、Al2O3TiC製の
磁気ヘッドスライダで徐々に磨耗して消耗する。潤滑剤
の消耗が著しい場合は、ヘッドクラッシュを引き起こす
恐れがある。When the CSS system is adopted as described above, the magnetic head and the magnetic disk surface slide when the magnetic disk device is started and stopped, so that a lubricant or carbon on the magnetic disk surface is used. The protective film gradually wears and wears out on the magnetic head slider made of Al 2 O 3 TiC. If the lubricant is significantly consumed, a head crash may occur.
【００１２】また、MRヘッド等のように磁気ディスク保
護膜と同様の材料からなる保護膜が磁気ヘッド側にも形
成されている場合は、磁気ディスク側に塗布された液体
潤滑剤が磁気ヘッドのカーボン保護膜に付着し、磁気デ
ィスク上の潤滑剤の減少が促進されるといった問題が生
じた。When a protective film made of the same material as the magnetic disk protective film is formed on the magnetic head side as in the case of an MR head, the liquid lubricant applied to the magnetic disk side is used for the magnetic head. There was a problem that the carbon adhered to the carbon protective film and the reduction of the lubricant on the magnetic disk was promoted.
【００１３】このような問題は、純カーボン膜に限ら
ず、水素を混入させたダイヤモンドライクのカーボン膜
（ＤＬＣ）やフッ素膜、シリコン膜に関しても同様に生
じる。このように機械的強度を増している保護膜では、
その耐磨耗性は向上しているものの、一度磨耗粉が発生
するとその挙動は著しい。すなわち、硬い磨耗粉によっ
て摩耗作用が加速され、ヘッドクラシュの危険性がより
大きくなる。Such a problem is not limited to a pure carbon film, but similarly occurs in a diamond-like carbon film (DLC) mixed with hydrogen, a fluorine film, and a silicon film. In the protective film that has increased mechanical strength in this way,
Although its abrasion resistance is improved, its behavior is remarkable once abrasion powder is generated. That is, the hard abrasion powder accelerates the wear action, and the risk of head crush increases.
【００１４】本発明の技術的課題は、このような問題に
着目し、耐久性に優れた磁気ディスク装置を実現するこ
とにあり、特に磁気ディスクおよび磁気ヘッドに用いら
れる保護膜を改良することにある。A technical object of the present invention is to realize a magnetic disk device having excellent durability by paying attention to such a problem, and particularly to improve a protective film used for a magnetic disk and a magnetic head. is there.
【００１５】[0015]
【課題を解決するための手段】請求項１は、電磁変換素
子を搭載した磁気ヘッドスライダの少なくとも摺動面側
に保護膜が積層され、磁気記憶媒体面には保護膜が積層
されその上に潤滑剤の層を設けてなる磁気記憶装置を対
象とするものであり、図１に示すように、磁気記憶媒体
側の保護膜Ｃｍの液体接触角θｍが、磁気ヘッド側の保
護膜Ｃｈの液体接触角θｈより小さいことを特徴とす
る。図１において、１７は液体、例えば水玉である。According to a first aspect of the present invention, a protective film is laminated on at least a sliding surface side of a magnetic head slider on which an electromagnetic transducer is mounted, and a protective film is laminated on a magnetic storage medium surface. The present invention is intended for a magnetic storage device provided with a lubricant layer. As shown in FIG. 1, the liquid contact angle θm of the protective film Cm on the magnetic storage medium side is the liquid of the protective film Ch on the magnetic head side. It is characterized in that it is smaller than the contact angle θh. In FIG. 1, 17 is a liquid, for example, a polka dot.
【００１６】請求項２は、前記の磁気記憶装置の保護膜
において、磁気記憶媒体側の保護膜のダングリンボンド
数DBが、磁気ヘッド側の保護膜のダングリンボンド数DB
より大きいことを特徴とする。請求項３は、請求項１ま
たは請求項２記載の保護膜Ｃｍ、Ｃｈがカーボン保護膜
（以下「Ｃ保護膜」と略す）であることを特徴とする。According to a second aspect of the present invention, in the protective film of the magnetic storage device, the number DB of dangling bonds of the protective film on the side of the magnetic storage medium is the number DB of dangling bonds of the protective film on the side of the magnetic head.
Characterized by being larger. A third aspect of the present invention is characterized in that the protective films Cm and Ch according to the first or second aspect are carbon protective films (hereinafter abbreviated as “C protective film”).
【００１７】請求項４は、請求項１から請求項３中のい
ずれかの項に記載の磁気記憶媒体および磁気ヘッドの保
護膜を形成する際に、磁気記憶媒体および磁気ヘッドの
Ｃ保護膜を水素混入雰囲気中で形成し、しかも磁気記憶
媒体のＣ保護膜形成時の水素分圧を磁気ヘッドのＣ保護
膜の形成時の水素分圧に比較し低くすることを特徴とす
る。According to a fourth aspect of the present invention, when the protective film for the magnetic storage medium and the magnetic head according to any one of the first to third aspects is formed, the C protective film for the magnetic storage medium and the magnetic head is used. It is characterized in that it is formed in a hydrogen-containing atmosphere, and the hydrogen partial pressure at the time of forming the C protective film of the magnetic storage medium is made lower than the hydrogen partial pressure at the time of forming the C protective film of the magnetic head.
【００１８】請求項５は、請求項１から請求項３中のい
ずれかの項に記載の磁気記憶媒体および磁気ヘッドの保
護膜を形成する際に、該Ｃ保護膜をCH4-Ar雰囲気中で形
成し、各Ｃ保護膜形成時のCH4 量を、 磁気記憶媒体側：CH4=10〜25％、 磁気ヘッド側：CH4=20〜45％ の範囲とすることを特徴とする。According to a fifth aspect of the present invention, when the protective film for the magnetic storage medium and the magnetic head according to any one of the first to third aspects is formed, the C protective film is formed in a CH 4 -Ar atmosphere. It is characterized in that the amount of CH 4 at the time of forming each C protective film is set in the range of magnetic recording medium side: CH 4 = 10 to 25%, magnetic head side: CH 4 = 20 to 45%.
【００１９】請求項６は、請求項１から請求項３中のい
ずれかの項に記載の磁気記憶媒体および磁気ヘッドの保
護膜を水素混入雰囲気中で形成する際に、双方のＣ保護
膜形成時の水素分圧を等しくし、かつ磁気記憶媒体のＣ
保護膜形成時に、基板側に負の直流電圧を印加すること
を特徴とする。According to a sixth aspect of the present invention, when the protective films for the magnetic storage medium and the magnetic head according to any one of the first to third aspects are formed in a hydrogen mixed atmosphere, both C protective films are formed. The hydrogen partial pressure at the same time and C of the magnetic storage medium
It is characterized in that a negative DC voltage is applied to the substrate side when the protective film is formed.
【００２０】なお、磁気記憶媒体が磁気ディスクの場
合、その基板、下地層、記録層、潤滑層の構成材料およ
びその形成方法は特に限定されるものでなく、その機能
を満足するものであれば良い。When the magnetic storage medium is a magnetic disk, the constituent materials of the substrate, the underlayer, the recording layer, and the lubricating layer and the forming method thereof are not particularly limited, as long as they satisfy the function. good.
【００２１】[0021]
【作用】請求項１のように、磁気記憶媒体側の保護膜の
液体接触角θｍが、磁気ヘッド側の保護膜の液体接触角
θｈより小さいということは、液体である潤滑剤との濡
性が、磁気ヘッド側の保護膜より、磁気記憶媒体側の保
護膜が大きいことを指す。したがって、潤滑剤は磁気記
憶媒体側との付着力が強くなり、磁気ヘッドの保護膜に
付着する潤滑剤の付着力とその量を低減することができ
る。According to the present invention, the liquid contact angle θm of the protective film on the magnetic storage medium side is smaller than the liquid contact angle θh of the protective film on the magnetic head side, which means that the wettability with the liquid lubricant is large. Indicates that the protective film on the magnetic storage medium side is larger than the protective film on the magnetic head side. Therefore, the adhesive has a stronger adhesive force with the magnetic storage medium side, and the adhesive force and the amount of the lubricant that adheres to the protective film of the magnetic head can be reduced.
【００２２】このようにヘッド保護膜に付着する潤滑剤
の付着力を小さくすることで、磁気記憶媒体上の潤滑剤
の減少量を低減することができる。すなわち、安定した
潤滑層を媒体上に維持することで、耐久性に優れた磁気
記憶装置を実現できる。また、潤滑剤と磁気ヘッドの保
護膜との濡性を低下させて相互の付着力を効果的に低減
するためには、請求項２のように、磁気ヘッドの保護膜
中のダングリングボンド数を極力少なくし、かつ磁気記
憶媒体側の保護膜との差を大きくすることが有効であ
る。By thus reducing the adhesive force of the lubricant that adheres to the head protection film, the amount of decrease of the lubricant on the magnetic storage medium can be reduced. That is, by maintaining a stable lubricating layer on the medium, a magnetic storage device having excellent durability can be realized. Further, in order to reduce the wettability between the lubricant and the protective film of the magnetic head and effectively reduce the mutual adhesive force, the number of dangling bonds in the protective film of the magnetic head may be increased as described in claim 2. It is effective to minimize the above-mentioned problem and increase the difference from the protective film on the magnetic storage medium side.
【００２３】請求項３のように、請求項１または請求項
２記載の保護膜Ｃｍ、Ｃｈをカーボン膜とすることによ
り、すでに確立された製造技術で容易に保護膜を作製で
きる。請求項４のように、磁気記憶媒体および磁気ヘッ
ドのＣ保護膜を水素混入雰囲気中で形成すると、水素含
有Ｃ保護膜となるので、硬度や耐衝撃性などの機械的特
性にすぐれ、ヘッドクラッシュなどを起こしにくい。According to the third aspect, by using the protective films Cm and Ch according to the first or second aspect as carbon films, the protective film can be easily manufactured by the already established manufacturing technique. When the C protective film of the magnetic storage medium and the magnetic head is formed in a hydrogen-mixed atmosphere as described in claim 4, it becomes a hydrogen-containing C protective film, so that it has excellent mechanical properties such as hardness and impact resistance, and a head crash. Is hard to cause.
【００２４】また、水素混入雰囲気中でＣ保護膜を成膜
する際に、水素分圧を適切に設定することで、Ｃ保護膜
中の水素含有量を制御することができ、水素含有量によ
り、Ｃ保護膜のダングリングボンド数を任意に制御でき
る。磁気記憶媒体のＣ保護膜Ｃｍ形成時の水素分圧を磁
気ヘッドＣ保護膜Ｃｈの形成時の水素分圧に比較し低く
することは容易に可能なため、潤滑剤と磁気ヘッド側と
の付着力を低減することは容易に実現できる。When the C protective film is formed in a hydrogen-containing atmosphere, the hydrogen content in the C protective film can be controlled by appropriately setting the hydrogen partial pressure. , C protective film the number of dangling bonds can be controlled arbitrarily. Since it is easily possible to lower the hydrogen partial pressure when the C protective film Cm of the magnetic storage medium is formed compared to the hydrogen partial pressure when the magnetic head C protective film Ch is formed, it is possible to attach the lubricant to the magnetic head side. Reducing the adhesion force can be easily realized.
【００２５】さらに、磁気ヘッド側のＣ保護膜のダング
リングボンド数を減らすことは、バンドギャップ中の不
純物準位の低減をもたらし、高抵抗膜の実現を可能とす
る。したがって、ＭＲ素子に直接印加された電流が磁気
ディスクなどにリークするのを防止する必要のあるＭＲ
ヘッドに特に適している。Furthermore, reducing the number of dangling bonds in the C protective film on the magnetic head side reduces the impurity level in the band gap, and makes it possible to realize a high resistance film. Therefore, it is necessary to prevent the current applied directly to the MR element from leaking to the magnetic disk or the like.
Especially suitable for heads.
【００２６】磁気記憶媒体のＣ保護膜形成時の水素分圧
を相対的に低くするには、請求項５のように、それぞれ
のＣ保護膜をCH4-Ar雰囲気中で形成し、磁気記憶媒体側
のＣ保護膜形成時のCH4 量を10〜25％とし、磁気ヘッド
側のＣ保護膜形成時のCH4 量を20〜45％の範囲とするこ
とより、磁気ヘッド・Ｃ保護膜中のダングリングボンド
数を極力少なくでき、かつ磁気記憶媒体側のＣ保護膜と
の差を大きくすることが可能である。In order to make the hydrogen partial pressure at the time of forming the C protective film of the magnetic storage medium relatively low, each C protective film is formed in a CH 4 -Ar atmosphere as in claim 5, and the magnetic storage is performed. the CH 4 amount of time C protective film formed of the medium side is 10% to 25%, the CH 4 amount of time C protective film formation of the magnetic head side from in the range 20 to 45% magnetic head · C protective film The number of dangling bonds in the inside can be reduced as much as possible, and the difference from the C protective film on the magnetic storage medium side can be increased.
【００２７】磁気記憶媒体および磁気ヘッドのＣ保護膜
を水素混入雰囲気中で形成する際に、請求項６のよう
に、基板側に負の直流電圧を印加すれば、双方のＣ保護
膜形成時の水素分圧を変える必要はなく、制御が簡単に
なる。When the C protective films of the magnetic storage medium and the magnetic head are formed in a hydrogen-containing atmosphere, if a negative DC voltage is applied to the substrate side as in the sixth aspect, both C protective films are formed. It is not necessary to change the hydrogen partial pressure of, and the control becomes simple.
【００２８】以上のように、磁気ヘッド側より磁気記憶
媒体側のＣ保護膜の液体接触角を小さくすることで、磁
気記憶媒体上の潤滑層が長期的に安定化するので、耐久
性に優れ、かつ信頼性の高い磁気記憶装置を実現でき、
さらに磁気記憶装置の大容量化と、高品質化を実現でき
る。As described above, by making the liquid contact angle of the C protective film on the side of the magnetic storage medium smaller than that on the side of the magnetic head, the lubricating layer on the magnetic storage medium is stabilized for a long period of time, so that the durability is excellent. It is possible to realize a highly reliable magnetic storage device,
Further, it is possible to realize a large capacity and high quality of the magnetic storage device.
【００２９】[0029]
【実施例】次に本発明による磁気記憶装置とその製造方
法が実際上どのように具体化されるかを実施例で説明す
る。図２は本発明の方法で製造された磁気ディスク装置
の磁気ヘッド・磁気ディスクの断面図である。EXAMPLES Next, practical examples of how the magnetic storage device according to the present invention and its manufacturing method are embodied will be described. FIG. 2 is a cross-sectional view of a magnetic head / magnetic disk of a magnetic disk device manufactured by the method of the present invention.
【００３０】磁気ディスクＭは、図７に示す従来の磁気
ディスクＭと違って、磁性膜４の上の保護膜Ｃｍが、水
素含有カーボンで形成され、その上にパーフロロポリエ
ーテルなどの潤滑剤６が塗布されている。また、磁気ヘ
ッドのスライダ７の摺動面側７ｓ側も、水素含有Ｃ保護
膜Ｃｈで覆われている。In the magnetic disk M, unlike the conventional magnetic disk M shown in FIG. 7, a protective film Cm on the magnetic film 4 is formed of hydrogen-containing carbon, and a lubricant such as perfluoropolyether is formed on the protective film Cm. 6 is applied. The sliding surface side 7s of the slider 7 of the magnetic head is also covered with the hydrogen-containing C protective film Ch.
【００３１】図３はこの磁気ディスクＭの製造方法を例
示する平面図である。まず、アルミニウム基板１の表面
にNiＰめっき層２を形成し、その上にCr下地層３を５00
〜3000Å程度スパッタ成膜し、さらにCoCr系合金を３00
〜５00Å程度スパッタして薄膜磁性膜４を形成する点ま
では、従来の方法と変わりない。なお、CrおよびCoCr系
合金は、パワー密度１〜３Ｗ／ｃｍ2 、ガス圧５〜１０
ｍＴｏｒｒ、基板温度１５０〜２５０℃程度の条件でス
パッタする。FIG. 3 is a plan view illustrating a method for manufacturing the magnetic disk M. First, a NiP plating layer 2 is formed on the surface of an aluminum substrate 1, and a Cr underlayer 3 is formed on top of it.
Approximately 3000 Å sputter film is formed, and further CoCr alloy is 300
The method is the same as the conventional method up to the point of forming the thin-film magnetic film 4 by sputtering up to about 500Å. The Cr and CoCr alloys have power densities of 1 to 3 W / cm 2 and gas pressures of 5 to 10
Sputtering is performed under the conditions of mTorr and substrate temperature of 150 to 250 ° C.
【００３２】本発明では、カーボンターゲット１８を、
磁性膜４と対向配置して、磁性膜４の上に水素含有Ｃ保
護膜Ｃｍを１00〜３00Å程度スパッタする。この際に、
従来と同様にＡｒガス中でスパッタを行なうが、Ｃ保護
膜Ｃｍ中に水素を含有させるために、メタンガス（CH
4 ) を混入し、CH4-Ar雰囲気中でスパッタする。In the present invention, the carbon target 18 is
A hydrogen-containing C protective film Cm is sputtered on the magnetic film 4 by facing the magnetic film 4 by about 100 to 300Å. At this time,
Sputtering is carried out in Ar gas as in the conventional case, but since hydrogen is contained in the C protective film Cm, methane gas (CH
4 ) is mixed and sputtered in a CH 4 -Ar atmosphere.
【００３３】水素含有Ｃ保護膜Ｃｍのスパッタは、パワ
ー密度１〜５Ｗ／ｃｍ2 、ガス圧５〜１０ｍＴｏｒｒ、
基板温度１５０〜２５０℃程度の条件で行ない、その雰
囲気は１５％のCH4 を含むCH4-Arとした。この条件で形
成したＣ保護膜Ｃｍの水玉との接触角は４８・５度であ
った。最後に、この水素含有Ｃ保護膜Ｃｍの上に、液体
潤滑剤を５〜３０Å程度塗布して完成する。Sputtering of the hydrogen-containing C protective film Cm was performed with a power density of 1 to 5 W / cm 2 , a gas pressure of 5 to 10 mTorr.
The substrate temperature was about 150 to 250 ° C., and the atmosphere was CH 4 —Ar containing 15% CH 4 . The contact angle of the C protective film Cm formed under these conditions with the water drops was 48.5 degrees. Finally, a liquid lubricant is applied on the hydrogen-containing C protective film Cm in an amount of about 5 to 30 Å to complete the process.
【００３４】一方、磁気ヘッドは、電磁変換素子として
MR素子をAL2O3-TiC スライダーに形成し、その摺動面
（浮上面）側に水素含有カーボン膜を50〜 300Å程度、
CH4-Ar雰囲気中でスパッタリング法により形成した。こ
の場合のスパッタリング雰囲気は、25％のCH4 を含むも
のであり、基板温度 100〜 200℃程度の条件で成膜し
た。この条件で形成したＣ保護膜Ｃｈの水玉との接触角
は６９・４度であった。On the other hand, the magnetic head serves as an electromagnetic conversion element.
MR element is formed on AL 2 O 3- TiC slider, and hydrogen-containing carbon film is on the sliding surface (floating surface) side of 50 to 300Å.
It was formed by a sputtering method in a CH 4 -Ar atmosphere. In this case, the sputtering atmosphere contains 25% of CH 4 , and the film was formed under the condition of the substrate temperature of 100 to 200 ° C. The contact angle of the C protective film Ch formed under these conditions with the polka dots was 69.4 degrees.
【００３５】図４はこのような方法で水素含有Ｃ保護膜
を形成する際にCH4 ガス濃度を変えて水素分圧を制御す
ることにより、液体接触角を測定した結果であり、曲線
19から明らかなように、CH4 ガス濃度が高くなるに従っ
て液体接触角が増大し、濡性が悪くなることが認められ
る。したがって、潤滑剤の濡性を良くする必要のある磁
気ディスク側のＣ保護膜Ｃｍをスパッタする際のCH4 ガ
ス濃度を、磁気ヘッド側のカーボン保護膜Ｃｈをスパッ
タする場合よりも相対的に低くすればよい。FIG. 4 shows the results of measuring the liquid contact angle by changing the CH 4 gas concentration and controlling the hydrogen partial pressure when forming the hydrogen-containing C protective film by such a method.
As is clear from 19, it is recognized that the liquid contact angle increases and the wettability deteriorates as the CH 4 gas concentration increases. Therefore, the CH 4 gas concentration when sputtering the C protective film Cm on the magnetic disk side, which requires better wettability of the lubricant, is relatively lower than when sputtering the carbon protective film Ch on the magnetic head side. do it.
【００３６】カーボン保護膜形成時のCH4 量は、磁気デ
ィスク側をCH4=10〜25％の範囲とし、磁気ヘッド側をCH
4=20〜45％の範囲とするのが適当である。45％を越える
と、Ｃ保護膜が有機化して硬度が低下し、膜質が不安定
となる。また、10％より少ないと、ラマン比が０．８０
以下に達せず、しかもラマン比が安定せず、製造マージ
ンが取れない。The amount of CH 4 at the time of forming the carbon protective film is set in the range of CH 4 = 10 to 25% on the magnetic disk side and CH 4 on the magnetic head side.
It is appropriate that the range is 4 = 20 to 45%. If it exceeds 45%, the C protective film becomes organic and the hardness decreases, and the film quality becomes unstable. If it is less than 10%, the Raman ratio is 0.80.
It does not reach the following, and the Raman ratio is not stable, and the manufacturing margin cannot be secured.
【００３７】図５は本発明方法の別の実施例を示す側面
図であり、水素分圧を制御することなしに、基板側に負
の直流電圧を印加するようになっている。すなわち、Ｃ
保護膜をスパッタする際に、磁性膜が形成された基板１
ｍを成膜トレイ２０に支持して、成膜トレイ２０を金属
レール２１上で走行させるが、金属レール２１に直流電
源２２を接続して金属レール２１に負の電圧を印加する
と、金属製の車輪２３、成膜トレイ２０を介して、各基
板１ｍに負の電圧が印加される。FIG. 5 is a side view showing another embodiment of the method of the present invention, in which a negative DC voltage is applied to the substrate side without controlling the hydrogen partial pressure. That is, C
Substrate 1 on which a magnetic film is formed when a protective film is sputtered
m is supported on the film-forming tray 20 and the film-forming tray 20 is run on the metal rail 21. When a direct current power supply 22 is connected to the metal rail 21 and a negative voltage is applied to the metal rail 21, A negative voltage is applied to each substrate 1m via the wheels 23 and the film formation tray 20.
【００３８】このように、水素含有Ｃ保護膜をスパッタ
成膜する際に、基体側に負の電圧を印加すると、選択的
な逆スパッタあるいは緻密化により、液体とＣ保護膜と
の接触角が、磁気ヘッド側より磁気ディスク側が小さく
なり、濡性が強くなる。As described above, when a negative voltage is applied to the substrate side when the hydrogen-containing C protective film is formed by sputtering, the contact angle between the liquid and the C protective film is increased by selective reverse sputtering or densification. , The magnetic disk side becomes smaller than the magnetic head side, and the wettability becomes stronger.
【００３９】[0039]
【発明の効果】請求項１によると、液体と保護膜との接
触角が、磁気ヘッド側より磁気記憶媒体側が小さくなる
ように製造することにより、液体潤滑剤と保護膜との濡
性を、磁気ヘッド側より磁気記憶媒体側を大きくして、
磁気記憶媒体上の潤滑層を長期にわたって安定して保持
させることができ、耐久性に優れた磁気記憶装置の実現
が可能となる。According to the first aspect of the present invention, the liquid lubricant and the protective film are manufactured so that the contact angle between the liquid and the protective film is smaller on the magnetic recording medium side than on the magnetic head side. Make the magnetic storage medium side larger than the magnetic head side,
The lubricating layer on the magnetic storage medium can be stably held for a long period of time, and a magnetic storage device having excellent durability can be realized.
【００４０】請求項２のように、磁気ヘッドの保護膜中
のダングリングボンド数を極力少なくし、かつ磁気記憶
媒体側の保護膜との差を大きくすることにより、潤滑剤
と磁気ヘッドの保護膜との濡性を低下させて相互の付着
力を効果的に低減することができ、請求項３のように、
前記保護膜Ｃｍ、Ｃｈをカーボン膜とすることにより、
保護膜を容易に作製できる。According to a second aspect of the present invention, the number of dangling bonds in the protective film of the magnetic head is minimized and the difference between the dangling bond and the protective film on the magnetic storage medium side is increased to protect the lubricant and the magnetic head. The wettability with the film can be reduced to effectively reduce the mutual adhesive force.
By using the protective films Cm and Ch as carbon films,
The protective film can be easily manufactured.
【００４１】請求項４のように、Ｃ保護膜を水素混入雰
囲気中で形成し、水素含有Ｃ保護膜とすることにより、
硬度や耐衝撃性などの機械的特性にすぐれ、ヘッドクラ
ッシュなどを起こしにくい。また、水素混入雰囲気中で
成膜する際に、磁気記憶媒体のＣ保護膜Ｃｍ形成時の水
素分圧を磁気ヘッドＣ保護膜Ｃｈの形成時の水素分圧に
比較し低く設定することで、潤滑剤と磁気ヘッド側との
付着力を低減することが容易に実現できる。As described in claim 4, the C protective film is formed in a hydrogen-containing atmosphere to form a hydrogen-containing C protective film.
Has excellent mechanical properties such as hardness and impact resistance, and is unlikely to cause head crashes. Further, by setting the hydrogen partial pressure when forming the C protective film Cm of the magnetic storage medium to be lower than the hydrogen partial pressure when forming the magnetic head C protective film Ch when forming a film in a hydrogen-containing atmosphere, It is possible to easily reduce the adhesive force between the lubricant and the magnetic head side.
【００４２】請求項５のように、磁気記憶媒体側のＣ保
護膜形成時のCH4 量を10〜25％とし、磁気ヘッド側のＣ
保護膜形成時のCH4 量を20〜45％の範囲とすることによ
り、磁気ヘッドのＣ保護膜中のダングリングボンド数を
極力少なくでき、かつ磁気記憶媒体側のＣ保護膜との差
を大きくできる。According to a fifth aspect of the present invention, the amount of CH 4 when forming the C protective film on the magnetic storage medium side is set to 10 to 25%, and the C on the magnetic head side is set.
By setting the CH 4 amount during the formation of the protective film in the range of 20 to 45%, the number of dangling bonds in the C protective film of the magnetic head can be minimized and the difference from the C protective film on the magnetic storage medium side can be minimized. Can be made bigger.
【００４３】請求項６のように、基板側に負の直流電圧
を印加すれば、双方のＣ保護膜形成時の水素分圧を変え
る必要がなく、制御が簡単になる。When a negative DC voltage is applied to the substrate side as in the sixth aspect, it is not necessary to change the hydrogen partial pressures at the time of forming both C protective films, and the control is simplified.
【図１】本発明による磁気記憶媒体および磁気ヘッドの
カーボン保護膜と水玉との接触角を示す断面図である。FIG. 1 is a cross-sectional view showing a contact angle between a carbon protective film of a magnetic storage medium and a magnetic head according to the present invention and a polka dot.
【図２】本発明の方法で製造された磁気ディスク装置の
磁気ヘッド・磁気ディスクの断面図である。FIG. 2 is a cross-sectional view of a magnetic head / magnetic disk of a magnetic disk device manufactured by the method of the present invention.
【図３】本発明による磁気ディスクの製造方法を例示す
る平面図である。FIG. 3 is a plan view illustrating a method for manufacturing a magnetic disk according to the present invention.
【図４】水素含有Ｃ保護膜を形成する際のCH4 ガス濃度
と液体接触角との関係を測定した結果である。FIG. 4 is a result of measurement of a relationship between a CH 4 gas concentration and a liquid contact angle when forming a hydrogen-containing C protective film.
【図５】本発明方法の別の実施例を示す側面図である。FIG. 5 is a side view showing another embodiment of the method of the present invention.
【図６】磁気ディスク装置の内部構造の全容を示す平面
図である。FIG. 6 is a plan view showing the entire internal structure of the magnetic disk device.
【図７】磁気ディスクの断面図と磁気ヘッドの側面図で
ある。FIG. 7 is a cross-sectional view of a magnetic disk and a side view of a magnetic head.
【図８】従来の薄膜磁気ヘッドの斜視図である。FIG. 8 is a perspective view of a conventional thin film magnetic head.
Ｍ 磁気ディスク １ 非磁性基板 ２ NiＰめっき層 ３ Ｃｒ下地層 ４ 磁気記録層（薄膜磁性膜） ５ カーボン保護膜 ６ 潤滑剤の層 ７ 磁気ヘッドのスライダ 14 電磁変換素子（磁気ヘッド素子やＭＲ素子） Ｃｍ 磁気ディスク側のＣ保護膜 Ｃｈ 磁気ヘッド側のＣ保護膜 17 水玉 18 カーボンターゲット 1m 磁気ディスク基板 M magnetic disk 1 non-magnetic substrate 2 NiP plating layer 3 Cr underlayer 4 magnetic recording layer (thin film magnetic film) 5 carbon protective film 6 lubricant layer 7 magnetic head slider 14 electromagnetic transducer element (magnetic head element or MR element) Cm C protective film on the magnetic disk side Ch C protective film on the magnetic head side 17 Polka dots 18 Carbon target 1m Magnetic disk substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高木 將宏 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Takagi 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited
Claims (6)
イダ７の少なくとも摺動面側に保護膜Ｃｈが積層され、
磁気記憶媒体面には保護膜Ｃｍが積層され、その上に潤
滑剤の層が設けられた磁気記憶装置において、 磁気記憶媒体側の保護膜Ｃｍの液体接触角θｍが、磁気
ヘッド側の保護膜Ｃｈの液体接触角θｈより小さいこと
を特徴とする磁気記憶装置。1. A protective film Ch is laminated on at least a sliding surface side of a magnetic head slider 7 having an electromagnetic conversion element mounted thereon,
In a magnetic storage device in which a protective film Cm is laminated on the surface of a magnetic storage medium and a lubricant layer is provided on the protective film Cm, the liquid contact angle θm of the protective film Cm on the magnetic storage medium side is the protective film on the magnetic head side. A magnetic storage device characterized in that it is smaller than the liquid contact angle θ of Ch.
記憶媒体側の保護膜Ｃｍのダングリンボンド数DBが、磁
気ヘッドの保護膜Ｃｈのダングリンボンド数DBより大き
いことを特徴とする請求項１記載の磁気記憶装置。2. The protective film Cm, Ch in the protective film Cm on the magnetic storage medium side, the number DB of dangling bonds is larger than the number DB of dangling bond of the protective film Ch of the magnetic head. Item 1. The magnetic storage device according to item 1.
ることを特徴とする請求項１または請求項２記載の磁気
記憶装置。3. The magnetic storage device according to claim 1, wherein the protective films Cm and Ch are carbon.
に記載の磁気記憶媒体および磁気ヘッドの保護膜を形成
する際に、 磁気記憶媒体および磁気ヘッドのカーボン保護膜を水素
混入雰囲気中で形成し、しかも磁気記憶媒体のカーボン
保護膜Ｃｍ形成時の水素分圧を磁気ヘッドのカーボン保
護膜Ｃｈの形成時の水素分圧に比較し低くすることを特
徴とする磁気記憶装置の製造方法。4. When forming a protective film for a magnetic storage medium and a magnetic head according to any one of claims 1 to 3, a carbon protective film for the magnetic storage medium and the magnetic head is mixed with a hydrogen-containing atmosphere. And a hydrogen partial pressure at the time of forming the carbon protective film Cm of the magnetic storage medium, which is lower than the hydrogen partial pressure at the time of forming the carbon protective film Ch of the magnetic head. Method.
に記載の磁気記憶媒体および磁気ヘッドのカーボン保護
膜Ｃｍ、Ｃｈを形成する際に、 該カーボン保護膜Ｃｍ、ＣｈをCH4-Ar雰囲気中で形成
し、各カーボン保護膜形成時のCH4 量を、 磁気記憶媒体側：CH4=10〜25％、 磁気ヘッド側：CH4=20〜45％の範囲とすることを特徴と
する請求項４記載の磁気記憶装置の製造方法。5. When forming the carbon protective films Cm, Ch of the magnetic storage medium and the magnetic head according to any one of claims 1 to 3, the carbon protective films Cm, Ch are replaced with CH 4 -It is formed in Ar atmosphere, and the amount of CH 4 at the time of forming each carbon protective film is set to the range of magnetic storage medium side: CH 4 = 10 to 25%, magnetic head side: CH 4 = 20 to 45%. The method of manufacturing a magnetic storage device according to claim 4, wherein
カーボン保護膜Ｃｍ、Ｃｈを水素混入雰囲気中で形成す
る際に、双方のカーボン保護膜形成時の水素分圧を等し
くし、かつ磁気記憶媒体のカーボン保護膜Ｃｍ形成時
に、基板側に負の直流電圧を印加することを特徴とする
請求項１から請求項３中のいずれかの項に記載の磁気記
憶装置の製造方法。6. When forming the carbon protective films Cm and Ch of the magnetic storage medium and the magnetic head in a hydrogen-mixed atmosphere, the hydrogen partial pressures of both carbon protective films are made equal, and the magnetic storage medium is formed. 4. The method of manufacturing a magnetic memory device according to claim 1, wherein a negative DC voltage is applied to the substrate side when the carbon protective film Cm is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14527294A JPH07334958A (en) | 1994-06-03 | 1994-06-03 | Magnetic storage device and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14527294A JPH07334958A (en) | 1994-06-03 | 1994-06-03 | Magnetic storage device and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07334958A true JPH07334958A (en) | 1995-12-22 |
Family
ID=15381305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14527294A Withdrawn JPH07334958A (en) | 1994-06-03 | 1994-06-03 | Magnetic storage device and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07334958A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6160683A (en) * | 1997-08-15 | 2000-12-12 | Seagate Technology Llc | Slider for disc storage system |
-
1994
- 1994-06-03 JP JP14527294A patent/JPH07334958A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6160683A (en) * | 1997-08-15 | 2000-12-12 | Seagate Technology Llc | Slider for disc storage system |
| US6452752B1 (en) | 1997-08-15 | 2002-09-17 | Seagate Technology Llc | Slider for disc storage system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010904 |