JPH07312344A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To remove, with good efficiency, moisture, impurities and the like which adhere when the air enters into a pipe when a material feed device is replaced in the material feed device for a crystal growth device which is used to manufacture a semiconductor. CONSTITUTION:An IN-side pipe 12 and an OUT-side pipe 13 which are connected to a container body 11 are made to communicate with each other by a bypass pipe 17. Manual valves 14a, 18a in which a dead space is small are installed near the connection part of the IN-side pipe 12 to the bypass pipe 17. Manual valves 14b, 18b in which a dead space is small are installed near the connection part of the OUT-side pipe 13 to the bypass pipe 17. The manual valves 18a, 18b are opened in a state that the manual valves 14a, 14b have been closed. Then, a carrier gas is made to flow.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a structure of an MO bubbler which is an apparatus for generating an organic metal material when manufacturing a semiconductor crystal using a metal organic chemical vapor deposition (MOCVD) method. Is.

[0002]

2. Description of the Related Art FIG. 11 shows an MO of a conventional semiconductor manufacturing apparatus.
It is a figure which shows the structure centering on the connection part of a bubbler and a crystal growth apparatus. As shown in the figure, a conventional MO bubbler 10 includes a container body 11 for storing an organic metal (MO),
A pipe (hereinafter, also referred to as an introduction pipe, an In side pipe) 12 for introducing a gas (for example, hydrogen gas) into the container body 11,
A pipe (hereinafter also referred to as Out side pipe) 13 for taking out a gas containing a material gas from the container body 11 is provided, and further,
Each of the pipes 12 and 13 is provided with manual valves 14a and 14b for shutting off the inside and outside of the container body 11, and the other end of the pipes 12 and 13 is provided with a crystal growth device (not shown). A connecting member (VCR or the like) 15a, 15b for connecting with a pipe 20 described later is attached. Reference numeral 16 denotes an organic metal material contained in the container body 11.

Reference numeral 20 is a crystal growth apparatus side pipe (not shown), which is a branch pipe 2 connected to the main pipe 20c via air operation valves 22a and 22b which operate in an air system.
It is composed of 0a and 20b. Main pipe 20c above
Has its upstream end connected to a reaction furnace, which is a crystal growth device (not shown), and a valve 21 for controlling a carrier gas is arranged in the middle thereof. Further, the branch pipe 20
A manual valve 24 is provided between a and the branch pipe 20b.
The exhaust system pipe 23 is connected via a and 24b.

Next, the operation during crystal growth will be described.
When supplying the material from the MO bubbler 10, first, the air operation valves 22a and 22b of the main pipe 20 are opened and the carrier gas control valve 21 is closed. This causes the carrier gas to flow into the In side pipe 12 side. Further, the manual valves 14a and 14b of the In-side pipe 12 and the Out-side pipe 13 are opened, hydrogen gas which is a carrier gas is introduced into the container body 11 through the In-side pipe 12, and the organometallic material 16 in the container body 11 is removed. Bubbling. Then, the vaporized MO and hydrogen gas are connected to the Out side pipe 13
It is further taken out and supplied to a reaction furnace (not shown) through the carrier gas pipe 20. At this time, the manual valves 24a and 24b are closed.

On the other hand, when the material is not supplied, the manual valves 14a and 14b are closed. In this case, from the air operation valves 22a and 22b on the crystal growth apparatus side to the container body 11
The gas is stopped between the pipes 12 and 13 up to and the branch pipes 20a and 20b. However, if the gas is stopped in the pipe, the water concentration in the pipe increases, and the water is mixed in the container body 11 during crystal growth, which serves as an oxygen supply source and oxidizes the organometallic material 16. As a result, problems such as the inability to obtain high quality crystals occur. In order to prevent this, it is necessary to always flow a high-purity hydrogen gas (a gas containing few impurities such as water) to remove the water.

Next, the work of replacing the MO bubbler 10 will be described. When replacing the MO bubbler 10, the manual valves 14a and 14b are closed and the manual valves 24a and 24b of the exhaust system pipe 23 are opened to evacuate between the manual valves 14a and 14b and the air operated valves 22a and 22b.

Next, the manual valves 24a and 24b of the exhaust system pipe 23 are closed, and the air operation valves 22a and 22b are closed.
Open the valve to supply hydrogen, and operate the manual valves 24a, 24
After making the pressure between b and the air operation valves 22a and 22b normal pressure,
The air operation valves 22a and 22b are closed.

Next, the MO bubbler 10 and the branch pipes 20a, 20b on the crystal growth apparatus side are separated at the connecting portions 15a, 15b. And connect the new MO bubbler to the connection part 15.
A and 15b connect to the branch pipes 20a and 20b. By such an operation, it is possible to prevent the growth gas from being released into the atmosphere when the MO bubbler 10 is replaced.

Next, the manual valves 14a and 14b and the air operation valves 22a and 22b are closed, and the exhaust system piping 23 is closed.
Open the manual valves 24a, 24b of the manual valves 14a, 14b and the air operated valves 22a, 22b.
Evacuate the space. By this operation, most of the air that has entered between the manual valves 14a and 14b and the air operated valves 22a and 22b when the MO bubbler 10 is replaced can be removed.

Then, the manual valves 24a and 24b of the exhaust system pipe 23 are closed, and the air operation valves 22a and 22b are closed.
Open the valve to supply hydrogen, and operate the manual valves 14a, 14
The pressure between b and the air operation valves 2a and 22b is set to normal pressure. Then, the air operated valves 22a and 22b are closed to prepare for the next crystal growth.

As described above, in the method of replacing the MO bubbler using the conventional semiconductor manufacturing apparatus, the air operation valve 22 is used.
The pipes from a, 22b to the manual valves 14a, 14b are exposed to the atmosphere and water adheres thereto. As described above, in order to remove this water, after replacing the MO bubbler 10, there is a method such as evacuating the piping between the air operation valves 22a and 22b and the manual valves 14a and 14b. It is considered that the most efficient way to remove water is to keep flowing a high-purity gas in the pipe.

A semiconductor manufacturing apparatus disclosed in, for example, Japanese Patent Laid-Open No. 63-87723 will be described below for the purpose of preventing air from being mixed into the container body when the MO bubbler is replaced. FIG. 12 is a view showing the structure of the bubbler container described in the above publication, in which 30 is a pipe between the manual valves 14a and 14b and the container body 11, between the In side pipe 12 and the Out side pipe 13. Is a bypass pipe attached via three-way valves 31a and 31b so as to communicate with each other.

When the MO bubbler is replaced, the connecting portion 15a,
Air flows into the pipe between 15b and the three-way valve 31a, 31b, but later, by connecting the three-way valve 31a and the three-way valve 31b, by controlling the other valves in the same manner as during growth, As shown by the solid arrow in the figure, an air discharge path is formed by the air operation valve 22a, the manual valve 14a, the three-way valve 31a, the bypass pipe 30, the three-way valve 31b, the manual valve 14b, and the air operation valve 22b. By the way, normally, what is called a three-way valve switches between passing gas in one direction and passing in two directions. Therefore, when the air discharge path is formed, the three-way valves 31a and 31b are bypass pipes. It is in a state of being opened not only on the side of 30 but also on the side of the container body 11. However, due to the pressure, the gas hardly flows to the container body 11 side and flows through the bypass pipe 30.

[0014]

The conventional semiconductor manufacturing apparatus is configured as described above and has a mechanism for discharging the air that has flowed in when the MO bubbler is replaced, but it uses a three-way valve. When discharging air, gas may flow into the container body side depending on the pressure condition, and the organometallic material in the container body may be oxidized by moisture or impurities,
There are problems such as contamination.

Further, in the Out side pipe, the vapor of the organometallic material flows backward from the container body, and the gas containing the organometallic material is discharged from the pipe and discharged, resulting in wasteful consumption of the organometallic material. .

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a semiconductor manufacturing apparatus capable of efficiently removing water in a pipe after replacement of an MO bubbler.

Another object of the present invention is to obtain a semiconductor manufacturing apparatus that efficiently removes water in the pipe after the MO bubbler exchange and does not wastefully consume a crystal growth material such as an organic metal.

[0018]

SUMMARY OF THE INVENTION A semiconductor manufacturing apparatus according to the present invention includes a bypass pipe which connects an introduction side pipe and an extraction side pipe, each of which is connected to a container body for storing a crystal material, and the introduction side pipe and A connection member that connects the extraction side pipe and the crystallizer side pipe, and is provided at the connection portion between the bypass pipe, the introduction side pipe, and the extraction side pipe, and the gas flow of the introduction side pipe toward the container body, And a gas flow path switching mechanism that stops the flow of gas from the container body toward the extraction side pipe and inserts the introduction side pipe and the extraction side pipe by the bypass pipe.

Further, according to the present invention (claim 2), in the semiconductor manufacturing apparatus (claim 1), the gas flow path switching mechanism is constructed by using an air operation valve. Further, according to the present invention (Claim 3), in the semiconductor manufacturing apparatus (Claim 1), the gas flow path switching mechanism is configured by using a three-way valve.

Further, according to the present invention (Claim 4), in the semiconductor manufacturing apparatus (Claim 1), the gas flow path switching mechanism is provided at a downstream introduction side in the vicinity of a connecting portion between the introduction side pipe and the bypass pipe. An air-operated valve provided in the pipe, an air-operated valve provided in the bypass pipe, and an air-operated valve provided in the upstream pipe on the upstream side in the vicinity of the connection between the outlet pipe and the bypass pipe. .

Further, according to the present invention (Claim 5), in the semiconductor manufacturing apparatus (Claim 1), the gas flow path switching mechanism is introduced downstream in the vicinity of a connecting portion between the introduction side pipe and the bypass pipe. An air operated valve provided on the side pipe,
It comprises a three-way valve provided in the bypass pipe and a three-way valve provided in the upstream pipe on the upstream side in the vicinity of the connection between the take-out pipe and the bypass pipe.

Further, according to the present invention (claim 6), in the semiconductor manufacturing apparatus (claim 1), the gas flow path switching mechanism is provided in a branch portion provided at a connecting portion between the introduction side pipe and the bypass pipe. The valve includes a valve, a three-way valve provided in the bypass pipe, and a three-way valve provided in the upstream take-out pipe near the connection between the take-out pipe and the bypass pipe.

Further, according to the present invention (Claim 7), in the semiconductor manufacturing apparatus (Claim 1), the bypass pipe is connected to the introduction side pipe and the extraction side pipe by communication passages, respectively, and the upstream end thereof is connected. It is assumed that the gas flow path switching mechanism is independently connected to a purge gas supply pipe for supplying a purge gas, and the gas flow path switching mechanism is provided in a downstream side introduction side pipe in the vicinity of a connecting portion between the introduction side pipe and the communication passage. Valve, a valve provided in the communication passage connected to the introduction side pipe, a valve provided in the extraction side pipe on the upstream side in the vicinity of the connection portion between the extraction side pipe and the communication passage, and the extraction side And a valve provided in a communication passage connected to the pipe.

Further, a semiconductor manufacturing apparatus according to the present invention (claim 8) is a container main body for accommodating a crystal growth material, a material extraction pipe for extracting a gas or a solution containing a material component from the container main body, and the above-mentioned material. A purge pipe that is connected to the extraction pipe and supplies a purge gas, a connection part that connects the material extraction pipe and the crystallizer side pipe, and an upstream material extraction near the connection part between the purge pipe and the material extraction pipe A gas flow path switching mechanism that is provided in the pipe and that stops the flow of the material gas or solution from the container body to the material extraction pipe and that operates so as to insert the purge pipe and the material extraction pipe It is a thing.

Further, according to the present invention (claim 9), in the semiconductor manufacturing apparatus (claim 8), the gas flow path switching mechanism is provided on an upstream side in the vicinity of a connection portion between the material extraction pipe and the purge pipe. The air operation valve is provided in the material extraction pipe, and the air operation valve is provided in the purge pipe in the vicinity of the connection between the material extraction pipe and the purge pipe.

According to the present invention (claim 10), in the semiconductor manufacturing apparatus (claim 8), the gas flow path switching mechanism is provided on an upstream side in the vicinity of a connecting portion between the material take-out pipe and the purge pipe. It is composed of a three-way valve provided in the material take-out pipe and a three-way valve provided in the purge pipe in the vicinity of the connection between the material take-out pipe and the purge pipe.

Further, the present invention (Claim 11) communicates the material take-out pipe and the purge pipe by a communication passage, and connects the gas flow path switching mechanism to the connecting portion between the material take-out pipe and the purge pipe. It is composed of a valve provided in the upstream material extraction pipe in the vicinity and a valve provided in the communication passage.

[0028]

In the present invention (Claim 1), the gas flow in the introduction side pipe toward the container body and the gas flow in the extraction side pipe from the container body to the extraction side pipe are stopped and the bypass pipe is used. Since the gas flow path switching mechanism that operates so as to pass through the introduction side pipe and the extraction side pipe is provided, it is possible to surely stop the flow of gas between the introduction side pipe, the extraction side pipe and the container body. it can.

In the present invention (claim 2), by using an air operated valve for the gas flow path switching mechanism, the switching operation of the valve can be automatically performed.

In the present invention (claim 3), the use of a three-way valve in the gas flow path switching mechanism makes it possible to reduce the dead space in the connection portion between the introduction side pipe, the extraction side pipe and the bypass pipe. Become.

In the present invention (claim 4), the gas flow path switching mechanism is provided in the bypass pipe and the air operation valve provided in the downstream introduction side pipe in the vicinity of the connecting portion between the introduction side pipe and the bypass pipe. The air operated valve
The device can be configured with a small number of valves by configuring the extraction side pipe and the air operation valve provided on the upstream side extraction side pipe in the vicinity of the connection portion of the bypass pipe.

In the present invention (claim 5), the gas flow path switching mechanism is provided in the bypass pipe and the air operation valve provided in the downstream introduction side pipe in the vicinity of the connecting portion between the introduction pipe and the bypass pipe. With a three-way valve provided,
The number of valves can be reduced by configuring the extraction side pipe and the three-way valve provided in the upstream extraction side pipe in the vicinity of the connection portion between the bypass pipe and the introduction side pipe, the extraction side pipe and the above The dead space at the connection with the bypass pipe becomes smaller.

In the present invention (claim 6), the gas flow path switching mechanism is provided with a branch valve provided at a connecting portion between the introduction side pipe and the bypass pipe and a three-way valve provided at the bypass pipe. And 3 provided on the upstream-side extraction-side pipe in the vicinity of the connection between the extraction-side pipe and the bypass pipe.
Since it is composed of the one-way valve, the number of valves can be reduced, and the dead space in the connecting portion between the introduction side pipe and the bypass pipe becomes smaller.

In the present invention (Claim 7), the bypass pipe is connected to the introduction side pipe and the take-out side pipe through communication passages, respectively, and the upstream end thereof is independently supplied with purge gas. It is assumed that the purge gas supply pipe is connected, and the gas flow path switching mechanism is provided with a valve provided in the introduction side pipe on the downstream side in the vicinity of the connection part between the introduction side pipe and the communication passage, and the introduction side pipe. A valve provided in the communication passage to be connected, a valve provided in the upstream extraction side pipe in the vicinity of the connection portion between the extraction side pipe and the communication passage, and a valve provided in the communication passage connected to the extraction side pipe Since it is composed of a valve, the purge gas can always flow through the bypass pipe.

In the present invention (claim 8), a container main body for accommodating the crystal growth material, a material take-out pipe for taking out a gas containing a material component from the container main body, and the material take-out pipe are connected to supply a purge gas. Purge pipe to, a connecting member for connecting the material extraction pipe and the crystallizer side pipe, provided in the upstream material extraction pipe near the connection portion of the purge pipe and the material extraction pipe, from the container body While stopping the flow of the material gas toward the material extraction pipe, since the gas flow path switching mechanism that inserts the purge pipe and the material extraction pipe is provided, even in the material supply device of the crystal growth apparatus without bubbling, It is possible to reliably stop the flow of gas between the material extraction pipe and the container body.

According to the present invention (claim 9), the gas flow path switching mechanism is provided with an air-operated valve provided in the upstream material extraction pipe in the vicinity of the connection between the material extraction pipe and the purge pipe, and the material. Since the air-operated valve is provided in the purge pipe in the vicinity of the connection between the take-out pipe and the purge pipe, the valve can be automatically operated.

In the present invention (claim 10), the gas flow path switching mechanism is provided with a three-way valve provided in the upstream material take-out pipe near the connection between the material take-out pipe and the purge pipe. Since it is composed of the three-way valve provided in the purge pipe in the vicinity of the connection portion between the material extraction pipe and the purge pipe, the dead space in the connection portion between the introduction side pipe, the extraction side pipe and the bypass pipe is smaller. Become.

In the present invention (claim 11), the material take-out pipe and the purge pipe are communicated with each other by a communication passage, and the gas flow path switching mechanism is provided in the vicinity of the connecting portion between the material take-out pipe and the purge pipe. Since the valve is provided in the upstream material extraction pipe and the valve provided in the communication passage, the purge gas can always flow through the purge pipe.

[0039]

【Example】

Example 1. An embodiment of the present invention will be described below. FIG. 1 shows an M of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
FIG. 3 is a diagram showing a configuration of an O bubbler, and a container body 11 for storing an organometallic material 16 and a gas such as hydrogen or nitrogen or an inert gas such as argon or helium is bubbled into the container body 11. A pipe (introduction pipe or In side pipe) 12 for introducing as a gas, a pipe (Out side pipe) 13 for taking out a bubbling gas (material gas) containing a bubbling gas and a material from the container body 11, and further In
Manual valves 14a and 18a with a small dead space are arranged on the downstream side of the branched portion of the side pipe 12 (the container body 11 side) and the bypass pipe 17, and the Out side pipe 13
This is a structure in which manual valves 14b and 18b with a small dead space are arranged on the upstream side of the bypass branch portion (on the side of the container body 11) and the bypass pipe 17. Furthermore, In
A connecting member (VCR or the like) 15 for connecting to a crystal growth apparatus (not shown) is provided at the ends of the side and Out side pipes as in the conventional case.
A and 15b are attached.

FIG. 2 is a view showing a state in which a bubbler is connected to the MO bubbler and the crystal growth apparatus (here, only the piping of the crystal growth apparatus and the air operation valve are shown). When supplying the MO material, the carrier gas control valve 21 is closed, the valves 22a, 14a, 22b, 14b of the In side pipe 12 and the Out side pipe 13 are opened, and the In side pipe from the crystal device side pipe 20 is closed. Carrier gas (hydrogen) is introduced into 12, and this hydrogen is introduced into the container body 11 through the In side pipe 12, the MO material 16 is bubbled, the material gas is taken out through the Out side pipe 13, and the crystal device side pipe It is supplied to a reaction tank (not shown) via 20.

On the other hand, when not in use, the In side pipe 12 and Ou
The valves 14a and 14b of the t-side pipe 13 are closed, the two valves 18a and 18b of the bypass pipe 17 are opened, and hydrogen is flown through the bypass pipe 17. As a result, the air operated valves 22a and 22b are connected to the manual valve 14a,
A gas path shown by a solid arrow is formed up to 14b, and hydrogen gas of high purity (gas containing few impurities such as moisture) is always available.
To remove water.

When replacing the MO bubbler, first, the MO bubbler and the crystal growth apparatus are connected by the connecting members 15a and 15b, and then the manual valves 18a and 18b of the bypass pipe 17 are opened (at this time, the In side pipe 12 and Ou are provided).
The valves 14a and 14b of the t-side pipe 13 are closed), the valves 24a and 24b of the exhaust pipe 23 are opened, the exhaust system pipe 23 is evacuated, and the air operated valve 22a (closed at this time) to the air operated valve 22b (closed at this time). The air in the path of the pipes 12, 17 and 13 up to () is excluded. This makes it possible to minimize the amount of air, water and the like flowing to the crystallizer side when hydrogen is subsequently flown.

Next, the valve 24 of the exhaust system pipe 23
a and 24b are closed, the air operation valve 22a and the air operation valve 22b are opened, and hydrogen is caused to flow in the paths of the pipes 12, 17, and 13 from the air operation valve 22a to the air operation valve 22b. As a result, when the MO bubbler is replaced, it is possible to efficiently remove the water and the like adhering to the pipes exposed to the atmosphere from the air-operated valves 22a and 22b of the apparatus to the MO bubbler.

As described above, according to this embodiment, the bypass pipe 17 for connecting the In side pipe 12 and the Out side pipe 13 is provided, and the manual valves 14a, 18b, 14b each having a small dead space are provided at the connecting portions of these pipes. ，
18b is provided, and when not in use or after replacing the MO bubbler,
Valves 14a and 1 of the In side pipe 12 and the Out side pipe 13
4b is closed and valves 18a and 18b of the bypass pipe 17 are provided.
Since the carrier gas introduced into the In side pipe 12 is directed to only the bypass pipe 17 without going to the container body 11 side, the moisture adhering to the inside of the pipe during MO bubbler replacement or when not in use is opened. A high-purity carrier gas can be flowed to efficiently reduce the carrier gas, which can prevent the organometallic material 16 from being oxidized by moisture. By performing crystal growth using this apparatus, high quality crystals can be obtained. Can be obtained. In addition, when the air and water are removed, there is no problem that the gas containing the vapor such as the organic metal material flows back from the In side pipe 12 and the Out side pipe 13 from the container body 11. Etc. can be suppressed.

In the first embodiment, a manual valve is used at the connection between the In side pipe 12 and the Out side pipe 13 and the bypass pipe 17, but an air operated valve operated by air pressure may be used instead. Of course, by doing so, the operation of each valve can be automatically performed, and the work efficiency is improved.

Example 2. Next, the structure of the MO bubbler of the semiconductor manufacturing apparatus according to the second embodiment of the present invention will be described. Figure 3
FIG. 6 is a diagram showing the structure of the MO bubbler of Example 3;
As shown in FIG. 3 (a), the difference from the first embodiment is that the manual valves 18a and 18b between the bypass pipe 17 and the In side pipe 12 and the Out side pipe 13 are eliminated, and the bypass pipe 1
One air operation valve 25 is provided near the center of 7, and air operation valves 14c and 14d are used instead of the manual valves 14a and 14b. That is, as the valve arranged in the bypass pipe 17,
It suffices if the bypass pipe can be closed during crystal growth and the bypass pipe 17 can be opened during replacement of the MO bubbler, so that only one valve is required.

The opening and closing of the air-operated valves 14c, 14d and 25 of the bubbler configured as described above are controlled by a controller of a crystal growth apparatus (not shown). As a result, there is an advantage that the controller of the crystal growth apparatus can supply and stop the material and perform hydrogen purging after the crystal growth, and that these operations can be automatically performed.

FIGS. 3 (b) and 3 (c) show the concrete usage of the MO bubbler shown in FIG. 3 (a), and FIG. 3 (b) shows the normal operation (when air pressure is applied to the air operation valves 14c and 14d). (When not performed) shows the case where a closed one (hereinafter, normally closed) is used, and FIG. 3 (c) shows a normal state (when no air pressure is applied) to the air operation valves 14c and 14d. Shows the case of using an open type (hereinafter, normally open type). In the case of FIG. 3 (c), the In side is used to prevent air from flowing into the container body 11 when the MO bubbler is replaced. Manual valves 19a and 19b are provided on the pipe 12 and the Out side pipe 13, respectively.

Example 3. Next, the structure of the MO bubbler of the semiconductor manufacturing apparatus according to the third embodiment of the present invention will be described. Figure 4
(a) is a diagram showing the structure of the MO bubbler of the third embodiment, and is different from the first embodiment in that the valves 14a, 14b, 18a, 18b arranged in the vicinity of the bypass pipe 17 are replaced by two continuous valves. The three-way valves 26a and 26b are used. Generally, a three-way valve is one in which a valve is built into a pipe in terms of shape, and it functionally operates so as to switch between gas flowing in one direction and gas flowing in two directions. Yes, here, the three-way valve 260 provided in the In side pipe 12 shuts off the gas going to the container body side, and the three-way valve 261 provided in the bypass pipe 17 goes to the gas going to the bypass pipe 17 side. Is arranged so that the flow of the gas can be stopped and the gas can flow only to the container body side.

Next, the operation will be described taking the In side pipe as an example. As shown in FIG. 4 (b), when the carrier gas flows through the bypass pipe 17, the three-way valve 261 arranged in the bypass pipe 17 has a two-way valve on the side of the bypass pipe 17 and the side of the container body. By operating so as to flow the gas in one direction, and by operating the three-way valve 260 provided in the In side pipe 12 to stop the flow of the gas toward the container body side, the gas toward the container body side is surely secured. It can be shut off and the carrier gas can be flowed only to the bypass pipe 17 side.

As described above, the valve can be incorporated in the pipe by using the three-way valve instead of the manual valve or the air operated valve, and the In side pipe 12, O
The dead space at the connection between the ut side pipe 13 and the bypass pipe 17 can be reduced, and the structure near the connection portion of the bypass pipe can be simplified.

Further, FIGS. 4 (c) and 4 (d) show a concrete mode of use of the MO bubbler shown in FIG. 4 (a), and FIG.
Of the valves forming the one-way valves 26a and 26b, In
The case where normally closed type valves are used for the valves located on the side pipe 12 and the Out side pipe 13 is shown in FIG. 4 (d).
Among the valves constituting the three-way valves 26a and 26b,
A case where a normally open type valve is used for the valves located in the In-side pipe 12 and the Out-side pipe 13 is shown in FIG.
In the case of (d), when the MO bubbler is replaced, the air flows into the container body 11
In side pipe 12, Out to prevent the inflow
Manual valves 19a and 19b are provided on the side pipe 13.

Example 4. Next, the structure of the MO bubbler of the semiconductor manufacturing apparatus according to the fourth embodiment of the present invention will be described. Figure 5
(a) is a diagram showing the structure of the MO bubbler of the fourth embodiment. The difference from the third embodiment is that the three-way valve at the branch portion between the In side pipe 12 and the bypass pipe 17 is removed and
At the branch portion of the side pipe 12 with the bypass pipe 17, an air operation valve 14c with less dead space on the downstream side.
Is the point that was installed. That is, as the valve arranged in the bypass pipe 17, it is sufficient that the bypass pipe can be closed at the time of crystal growth and the bypass pipe 17 can be opened at the time of replacing the MO bubbler, as in the second embodiment.
By providing one one-way valve, it is possible to realize the intended function.

Next, the operation will be described. At the time of supplying the material, the air operation valve 14c is opened, the two-way three-way valve 31 is closed to the side of the bypass pipe 17, and the gas flows only to the Out side pipe 13 and the container body 11 side. When using and removing water, the air operation valve 14c is closed and the two-way three-way valve 31 is bypassed 1
By opening only to the 7 side, the carrier gas directed to the container main body 11 side can be surely blocked, and the carrier gas can flow only to the bypass pipe 17 side. In addition, the organometallic material 16 from the container body 11 is the In side pipe 12, O
It does not flow toward the ut side pipe 13.

With this structure, it is possible to grow a high-quality crystal even if the number of valves used is reduced, and to efficiently remove water, impurities, etc. that have entered the pipe when the MO bubbler is replaced. It is possible,
The configuration can be further simplified as compared with the third embodiment.

Further, FIGS. 5 (b) and 5 (c) show a concrete usage of the MO bubbler shown in FIG. 5 (a), and FIG. 5 (b) shows a normally closed type air operated valve 14c. Of the valves used and constituting the three-way valve 31, O
The case where a normally closed type valve is used for the valve located on the ut side pipe 13 is shown, and FIG.
Of the valves that make up No. 1, a normally open type valve is used for the valve located on the Out side pipe 13, and in the case of FIG. 5 (c), air flows into the container body 11 when the MO bubbler is replaced. In side pipe 1 to prevent
2, Manual valve 19 on each of Out side piping 13
a and 19b are provided. Further, FIG. 5 (d) shows In
A crank-shaped pipe is used for the side pipe 12, and a bypass pipe 17 is connected in the middle thereof by using a branch valve 37. By doing so, the bypass pipe 17 is connected to the In-side pipe 13 by installing the valve. The dead space formed in the connection portion with the bypass pipe 17 can be reduced.

Example 5. Next, the structure of the MO bubbler of the semiconductor manufacturing apparatus according to Example 5 of the present invention will be described. Figure 6
In (a), the bypass pipe 40 is connected to the In-side pipe 12 and the Out-side pipe 13 in a cross shape, and communicates with the In-side pipe 12 and the Out-side pipe 13 by the action of a valve described later. Not only that, but the structure is such that the purge gas can be independently supplied to the bypass pipe 40. The valve portion 27a at the connecting portion of the In side pipe 12 is configured to switch the gas introduced into the In side pipe 12 to the container body 11 side and the bypass pipe 40 to flow. Further, the valve portion 27b at the connecting portion of the Out side pipe 13 shuts off the gas flowing from the MO bubbler container body 11 and opens the bypass pipe 40 side, or M
It is configured so that the gas flowing from the O bubbler container main body 11 is allowed to pass through and the bypass pipe 40 side is shut off. At both ends of the bypass pipe 40, connecting members (VCR etc.) 15c, 15d for connecting to an exhaust pipe (not shown) are provided. Figure 6
(b) is a diagram specifically showing a connection state of each pipe centering on the valve portion 27a (27b).
The (Out side pipe 13) and the bypass pipe 40 are connected by a communication pipe 28, and a valve 27 is connected to the communication pipe 28.
1 (273), and the In side pipe 12 (Out
A valve 270 (272) is provided downstream (upstream) of the connecting portion of the side pipe 13) with the communication pipe 28.

Here, the opening and closing of the valves centering on the valve portions 27a and 27b and the gas flow in each pipe will be described in detail with reference to FIG. First, regarding the opening and closing of the valve on the In side pipe and the gas flow in the pipe, see Fig. 7 (a),
An explanation will be given using (b). When supplying MO material,
As shown in (a), the valve 270 of the In side pipe 12 is opened so that the hydrogen gas flows only to the container body 11 side, and the valve 271 is arranged so that the gas does not flow from the bypass pipe 40 to the In side pipe 12. Close. On the other hand, when not in use, as shown in FIG. 7B, the valve 27 of the In side pipe 12 is
0 is closed to close the container body 11 side and the In side pipe 1
The valve 271 is opened so that the hydrogen gas introduced in 2 flows into the bypass 40.

Next, the opening / closing of the valve of the Out side pipe 13 and the gas flow in each pipe will be described with reference to FIGS. 7 (c) and 7 (d). When supplying the MO material, as shown in FIG. 7C, the valve 272 of the Out side pipe 13 is connected to the container body 1.
The valve 273 is closed so that the gas flowing from 1 flows to the device side and the gas does not flow from the bypass pipe 40 to the Out side pipe 13. On the other hand, when not in use, as shown in FIG. 7D, the valve 272 of the Out side pipe 13
To close the container body 11 side, and bypass pipe 4
The valve 273 is opened so that hydrogen gas flows into the Out side pipe 13 from 0. As a result, the purge gas can be constantly flowed into the bypass pipe 40 when not in use to prevent the water contained in the material gas from adhering to the bypass pipe.

When the MO bubbler is replaced, as shown in FIG. 8, after connecting the MO bubbler and the crystal growth apparatus by connecting portions 15a and 15b, the valve portions 27a and 27 are connected.
In a state where all the valves 270 to 273 constituting b are closed, the exhaust system pipe 23 is evacuated to perform air suction from the air operation valve 22a (closed at this time) to the air operation valve 22.
Air in the paths of the pipes 12, 40 and 13 up to b (closed at this time) is eliminated. This makes it possible to minimize the amount of air, water, etc. flowing to the crystallizer side when hydrogen is flown later. Then, the valve 271 of the valve portion 27 a and the valve 273 of the valve portion 27 b are opened, hydrogen is introduced into the bypass pipe 40 from the upstream side of the In side pipe 12, and the hydrogen is exhausted through the bypass pipe 40. This makes MO
At the time of exchanging the bubbler, it is possible to efficiently remove the water of the pipe exposed to the atmosphere between the air-operated valve of the apparatus and the MO bubbler and to which the water or the like is attached, and reduce the oxygen mixed in the crystal. Further, since high-purity hydrogen is constantly flowing in the bypass pipe 40, during the work of removing water and the like after the MO bubbler exchange, the purge gas directed to the reaction furnace is reduced, and the contamination of the reaction furnace is reduced accordingly. You can

FIG. 9 is a diagram showing a system configuration of a crystal growth apparatus incorporating the MO bubbler of this embodiment. Here, two stages of MO bubblers are connected and hydrogen is supplied to each bypass pipe 40. A main pipe 33a and a branch pipe 33b branched from the main pipe 33a for supplying hydrogen to the bypass pipe 40 of each MO bubbler.
And a general exhaust pipe 34 for collectively exhausting the hydrogen flowing in each bypass pipe 40, and a mechanism 32 (MFC, needle valve, needle valve and MFM, etc.) for controlling the flow rate of hydrogen supplied to each bypass pipe 40. The basic structure is the system in which is installed.

Next, the operation will be described. Main piping 3
3a is supplied to each of the branch pipes 33b, and the flow rate control mechanism 32 installed in each branch pipe 33b controls the flow rate of hydrogen flowing in each bypass pipe 40.
Supply hydrogen to zero. Then, the hydrogen flowing through the bypass pipe 40 is exhausted from the general exhaust pipe 34, which is a collection of the exhaust pipes.

Example 6. Next, the structure of the MO bubbler of the semiconductor manufacturing apparatus according to Example 6 of the present invention will be described. In each of the above embodiments, the case where the material of the liquid source is used as the semiconductor manufacturing apparatus has been described, but the growth material is not limited to this, and a type that supplies a solid or liquid source in a container that does not bubble. But it's okay.
The details will be described below with reference to FIG. FIG. 10A shows the first embodiment.
2 shows the structure of the MO bubbler of Example 6 to which the structure of FIG. 2 is applied. In the figure, the same reference numerals as those in FIG. A purge pipe connected to the side pipe 13 instead of the bypass pipe 17 of FIG.
Reference numerals e and 15f are connection members (VCR, etc.). See also FIG.
In (b), the same reference numerals as those in FIG. 8 indicate the same or corresponding portions, 36 is a purge pipe connected to the Out side pipe 13 instead of the bypass pipe 40 in FIG. 8, and 15g to 15i are connecting members (VCR or the like). ).

Next, the operation will be described. First, FIG.
In the semiconductor manufacturing apparatus of (a), when supplying the material 16a, the valve 14b of the Out side pipe 13 is opened, and the material gas in the container 11a is taken out from the Out side pipe 13 and supplied to the apparatus main body (not shown). On the other hand, when not in use, Out
The valve 14b of the side pipe 13 is closed, the valve 18b of the purge pipe 35 is opened, and the purge gas is flowed to the Out side pipe 13. As a result, a high-purity purge gas can be passed between the air operation valve 22b of the apparatus and the valve 14b of the container 11a to remove impurities and the like. Also, when replacing the container, first, the air operation valve 22b, the valve 1
4, 18b are closed, the valve 24b is opened and a vacuum is drawn, then the valve 24 is closed and the valve 18b of the purge pipe 25 is closed.
Open and let purge gas flow. Thus, when the container is replaced, impurities and the like attached to the pipe between the air-operated valve 22b of the device exposed to the atmosphere and the valve 14b of the container body 11a can be efficiently removed.

As described above, since impurities and the like in the pipe can be reduced, impurities and the like mixed in the crystal can be reduced when crystal growth is performed using this apparatus. Note that FIG.
In (a), the valve (manual valve) shown in FIG. 2 has been described as an example, but the valve mounted in the vicinity of the bypass pipe is not limited to this, and for example, the air operated valve shown in FIGS. A three-way valve may be used, and automation of valve operation and reduction of dead space can be expected respectively.

Next, in the semiconductor manufacturing apparatus shown in FIG.
When supplying the material 16a, the valve portion 27b of the Out side pipe 13 is opened so that the gas flowing from the container body 11a flows only to the crystallizer side, and the gas does not flow from the purge pipe 36 to the Out side pipe 13. Set as
The material is taken out from the Out side pipe 13. At this time, the purge gas is constantly flowing through the purge pipe 36. On the other hand, when not in use, the valve portion 27b of the Out side pipe 13 closes the container body 11a side, and is set so that the gas flows through the purge pipe 36. As a result, a high-purity purge gas can be passed between the air operation valve 22b of the crystallizer and the valve portion 27b of the container body 11a to remove impurities in the pipe. Also when replacing the container, first, the air operation valve 22b is closed, the valve portion 27b is closed for both the purge pipe 36 and the Out side pipe 13, and the valve 24b is opened for vacuuming.
To close the valve body 27b on the container body 11a side,
The purge gas is set from the purge pipe 36 so that the purge gas flows. As a result, when the container is replaced, the air-operated valve 22b of the device exposed to the atmosphere is removed from the container body 11
Impurities and the like adhering to the pipe extending up to the valve 27b of a can be efficiently removed.

Although the case where the organic metal is used as the crystal growth material has been described in the above-mentioned Examples 1 to 5, the present invention can be applied to a bubbler of another material supplied by bubbling. Further, in each of the above embodiments, the removal of water or impurities by hydrogen purging using the bypass pipe or the purge pipe is described, but it can be applied to the case where a gas other than hydrogen is used as the purge gas.
It is premised that the purge gas itself has high purity. Specific examples of this gas include nitrogen, argon,
Inert gases such as neon, krypton, xenon, etc. may be mentioned.

[0068]

As described above, according to the semiconductor manufacturing apparatus of the present invention (Claim 1), the gas flow in the introduction side pipe toward the container body and the gas flow from the container body to the extraction side pipe can be improved. A gas flow path switching mechanism that stops the flow and inserts the introduction side pipe and the extraction side pipe by a bypass pipe is provided, so that the flow of gas between the introduction side pipe, the extraction side pipe and the container body is surely performed. It can be stopped, the oxidation of the crystal growth material and the mixing of impurities can be significantly reduced, and by performing crystal growth using such an apparatus, for example, a semiconductor laser with excellent characteristics can be manufactured. In addition, it is possible to prevent unnecessary consumption of the crystal growth material in the container body.

According to the present invention (Claim 2), since the air-operated valve is used in the gas flow path switching mechanism, the valve switching operation can be automatically performed, and the working efficiency can be improved.

According to the present invention (Claim 3), since the three-way valve is used in the gas flow path switching mechanism, the dead space in the connecting portion between the introduction side pipe, the extraction side pipe and the bypass pipe is smaller. Therefore, there is an effect that water and impurities in the pipe can be removed more efficiently.

According to the present invention (claim 4), the gas flow path switching mechanism is provided in the bypass pipe and the air operation valve provided in the downstream introduction side pipe in the vicinity of the connecting portion between the introduction side pipe and the bypass pipe. An air operated valve provided,
Since the air-operated valve is provided in the extraction-side pipe on the upstream side in the vicinity of the connection portion between the extraction-side pipe and the bypass pipe, the device can be configured with a small number of valves, and the device can be inexpensive.

According to the present invention (Claim 5), the gas flow path switching mechanism is provided in the downstream pipe on the introduction side in the vicinity of the connecting portion between the pipe and the bypass pipe, and the bypass pipe. The three-way valve provided in the above-mentioned and the three-way valve provided in the upstream take-out side pipe in the vicinity of the connection portion between the take-out side pipe and the bypass pipe, the number of valves can be reduced and the above-mentioned introduction is possible. The dead space in the connecting portion between the side pipe and the take-out side pipe and the bypass pipe is further reduced, the apparatus can be made inexpensive, and water and impurities in the pipe can be removed more efficiently.

According to the present invention (claim 6), the gas flow path switching mechanism is provided with a branch valve provided at a connecting portion between the introduction side pipe and the bypass pipe, and a three-way provided at the bypass pipe. Since the valve and the three-way valve provided on the upstream pipe on the upstream side in the vicinity of the connection between the outlet pipe and the bypass pipe are provided, the number of valves can be reduced, and the introduction pipe and the bypass pipe can be reduced. There is an effect that the dead space in the connection portion with and becomes smaller, the apparatus can be made cheaper, and water and impurities in the pipe can be removed more efficiently.

According to the present invention (Claim 7), the bypass pipe is made to communicate with the introduction side pipe and the take-out side pipe respectively by communication passages, and the upstream end thereof is supplied with the purge gas independently of the purge gas. It is assumed that the gas flow path switching mechanism is connected to a supply pipe, and the valve provided in the introduction side pipe on the downstream side in the vicinity of the connection portion between the introduction side pipe and the communication passage is connected to the introduction side pipe. A valve provided in the communication passage, and a valve provided in the extraction-side pipe on the upstream side in the vicinity of the connecting portion between the extraction-side pipe and the communication passage,
Since it is composed of a valve provided in the communication passage connected to the extraction side pipe, it is possible to always flow the purge gas in the bypass pipe, it is possible to more efficiently remove water and impurities in the pipe, This is effective in reducing the contamination of the crystal growth apparatus.

According to the present invention (claim 8), a container main body for accommodating the crystal growth material, a material take-out pipe for taking out a gas or a solution containing a material component from the container main body, and a purge gas connected to the material take-out pipe And a connecting member for connecting the material take-out pipe and the crystallizer side pipe, and a pipe provided for the material take-out pipe on the upstream side in the vicinity of the connection between the purge pipe and the material take-out pipe, and the container Since the flow of the material gas or the solution from the main body to the material extraction pipe is stopped, and the gas flow path switching mechanism that operates to insert the purge pipe and the material extraction pipe is provided, a crystal growth apparatus without bubbling Even in the material supply device of, it is possible to surely stop the flow of gas between the material extraction pipe and the container body, and crystal growth can be performed using such a device. The Ukoto, for example, there is an effect that can be produced with good semiconductor laser characteristics. In addition, it is possible to prevent unnecessary consumption of the crystal growth material in the container body.

According to the present invention (Claim 9), the gas flow path switching mechanism is provided with an air-operated valve provided in the upstream material extraction pipe in the vicinity of the connection portion between the material extraction pipe and the purge pipe, and the material. Since it is composed of the take-out pipe and the air-operated valve provided in the purge pipe in the vicinity of the connection portion of the purge pipe, the valve can be automatically operated, and the working efficiency can be improved.

According to the present invention (Claim 10), the gas flow path switching mechanism is provided in the upstream material take-out pipe near the connecting portion between the material take-out pipe and the purge pipe.
Since it is composed of a one-way valve and a three-way valve provided in the purge pipe in the vicinity of the connecting portion of the material take-out pipe and the purge pipe, it can be used as a connecting portion of the introduction side pipe, the take-out side pipe and the bypass pipe. There is an effect that the dead space becomes smaller and the water and impurities in the pipe can be removed more efficiently.

According to the present invention (Claim 11), the material take-out pipe and the purge pipe are communicated with each other by a communication passage, and the gas flow path switching mechanism is connected to the connecting portion between the material take-out pipe and the purge pipe. Since it is composed of the valve provided in the upstream material extraction pipe in the vicinity and the valve provided in the communication passage, the purge gas can be constantly supplied to the purge pipe, and the moisture in the pipe and the There is an effect that impurities can be removed and contamination of the crystal growth apparatus can be reduced.

[Brief description of drawings]

FIG. 1 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a state where the MO bubbler of the semiconductor manufacturing apparatus of Example 1 is connected to a crystal growth apparatus side pipe.

FIG. 3 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

FIG. 5 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.

FIG. 6 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus according to a fifth embodiment of the present invention.

FIG. 7: I when using the semiconductor manufacturing apparatus of Example 5
The figure which shows the gas flow in the connection part of n side piping, Out side piping, and bypass piping.

FIG. 8 is a configuration diagram showing a state where the MO bubbler of the semiconductor manufacturing apparatus of Example 5 is connected to a crystal growth apparatus side pipe.

FIG. 9 is a diagram showing a state in which a system is configured by connecting a plurality of MO bubblers of the semiconductor manufacturing apparatus of Example 5 to piping on the crystal growth apparatus side.

FIG. 10 is an MO of a semiconductor manufacturing apparatus according to a sixth embodiment of the present invention.
It is a figure which shows the structure of a bubbler.

FIG. 11 is a diagram showing a structure of an MO bubbler of a conventional semiconductor manufacturing apparatus.

FIG. 12 is a diagram showing a structure of an MO bubbler of a semiconductor manufacturing apparatus having a conventional bypass path.

[Explanation of symbols]

11, 11a container body, 12 In side piping, 13 O
ut side pipe, 14a, 14b, 14c, 14d manual valve, 15a to 15i connecting member, 16 organometallic material, 16a solid or liquid source, 17 bypass pipe, 18a, 18b manual valve, 19
a, 19b Manual valve, 20 crystal growth device, 2
0a, 20b branch pipe, 20c main pipe, 21 carrier gas control valve, 22a, 22b air operated valve, 23 exhaust system pipe, 24a, 24b manual valve, 25 air operated valve, 26a, 26b 2 stations 3
One-way air operated valve, 27a, 27b valve part, 28
Communication pipe, 30 air operated valve, 31 2 way 3 way air operated valve, 32 flow controller, 33a main pipe,
33b Branch pipe, 34 General exhaust pipe, 35, 36 Purge pipe, 37 Branch valve, 40 Bypass pipe.

Claims (11)

[Claims] 1. A container main body for accommodating a crystal growth material, an introduction-side pipe for introducing bubbling gas into the container main body, an extraction-side pipe for extracting bubbling gas containing material components from the container main body, and the introduction-side. Bypass piping that connects the piping and the extraction-side piping, a connecting member that connects the introduction-side piping and the extraction-side piping to the crystallizer-side piping, and a connection portion between the bypass piping and the introduction-side piping and the extraction-side piping Is provided in, to stop the gas flow of the introduction side pipe toward the container body, and the flow of gas from the container body to the extraction side pipe, the introduction side pipe and the extraction side pipe by the bypass pipe And a gas flow path switching mechanism that inserts through the semiconductor manufacturing apparatus. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the gas flow path switching mechanism is an air-operated valve provided in a downstream introduction side pipe near a connection portion between the introduction side pipe and the bypass pipe, An air operation valve provided in the bypass pipe near the connection portion between the introduction side pipe and the bypass pipe, and an air operation valve provided in the upstream side extraction side pipe near the connection portion between the extraction side pipe and the bypass pipe, A semiconductor manufacturing apparatus, comprising: an air-operated valve provided in a bypass pipe in the vicinity of a connecting portion between the extraction side pipe and the bypass pipe. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the gas flow path switching mechanism is a three-way valve provided on a downstream introduction side pipe near a connection portion between the introduction side pipe and the bypass pipe. And a three-way valve provided in the bypass pipe near the connection portion between the introduction side pipe and the bypass pipe, and an upstream side extraction side pipe near the connection portion between the extraction side pipe and the bypass pipe A three-way valve, and a three-way valve provided in a bypass pipe in the vicinity of the connection between the extraction side pipe and the bypass pipe. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the gas flow path switching mechanism is an air-operated valve provided in a downstream introduction side pipe near a connection portion between the introduction side pipe and the bypass pipe, A semiconductor manufacturing apparatus comprising: an air operation valve provided in a bypass pipe; and an air operation valve provided in an upstream extraction pipe near a connection portion between the extraction pipe and the bypass pipe. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the gas flow path switching mechanism is an air-operated valve provided in a downstream introduction side pipe near a connecting portion between the introduction side pipe and the bypass pipe, A semiconductor comprising: a three-way valve provided in the bypass pipe; and a three-way valve provided in the upstream take-out pipe near the connection between the take-out pipe and the bypass pipe. Manufacturing equipment. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the gas flow path switching mechanism is provided in a branch valve provided in a connection portion between the introduction side pipe and the bypass pipe, and in the bypass pipe. A semiconductor manufacturing apparatus comprising a three-way valve and a three-way valve provided in an upstream-side extraction-side pipe in the vicinity of a connecting portion between the extraction-side pipe and the bypass pipe. 7. The semiconductor manufacturing apparatus according to claim 1, wherein the bypass pipe is connected to the introduction-side pipe and the extraction-side pipe by communication passages, and an upstream end of the bypass gas independently supplies the purge gas. The gas flow path switching mechanism is connected to a supply pipe, and the gas flow path switching mechanism is connected to a valve provided in a downstream introduction side pipe in the vicinity of a connecting portion between the introduction side pipe and the communication passage, and the introduction side pipe. A valve provided in the communication passage, a valve provided in the upstream extraction side pipe in the vicinity of the connection portion between the extraction side pipe and the communication passage, and a valve provided in the communication passage connected to the extraction side pipe And a semiconductor manufacturing apparatus. 8. A container main body for accommodating a crystal growth material, a material extraction pipe for taking out a gas or a solution containing a material component from the container main body, a purge pipe connected to the material extraction pipe for supplying a purge gas, A connection member for connecting the material take-out pipe and the crystallizer-side pipe, and an upstream material take-out pipe in the vicinity of the connecting portion between the purge pipe and the material take-out pipe are provided, and the container body faces the material take-out pipe. A semiconductor manufacturing apparatus comprising: a gas flow path switching mechanism that operates so as to stop the flow of a material gas or a solution and insert the purge pipe and the material take-out pipe. 9. The semiconductor manufacturing apparatus according to claim 8, wherein the gas flow path switching mechanism is an air-operated valve provided in an upstream material take-out pipe near a connecting portion between the material take-out pipe and the purge pipe, A semiconductor manufacturing apparatus comprising: an air operation valve provided in a purge pipe near a connection portion between the material extraction pipe and the purge pipe. 10. The semiconductor manufacturing apparatus according to claim 8, wherein the gas flow path switching mechanism is a three-way valve provided in an upstream material take-out pipe near a connecting portion between the material take-out pipe and the purge pipe. And a three-way valve provided in the purge pipe in the vicinity of the connection between the material extraction pipe and the purge pipe. 11. The semiconductor manufacturing apparatus according to claim 8, wherein the material extraction pipe and the purge pipe are connected by a communication passage, and the gas flow path switching mechanism includes the material extraction pipe and the purge pipe. A semiconductor manufacturing apparatus comprising a valve provided in an upstream material extraction pipe near the connection part of the above and a valve provided in the communication passage.