JPH0731039A - Gas insulated bus - Google Patents

Gas insulated bus

Info

Publication number
JPH0731039A
JPH0731039A JP5171273A JP17127393A JPH0731039A JP H0731039 A JPH0731039 A JP H0731039A JP 5171273 A JP5171273 A JP 5171273A JP 17127393 A JP17127393 A JP 17127393A JP H0731039 A JPH0731039 A JP H0731039A
Authority
JP
Japan
Prior art keywords
diameter
metal
tank
voltage conductor
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5171273A
Other languages
Japanese (ja)
Inventor
Kenji Yoshida
健治 吉田
Satoshi Oyama
敏 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5171273A priority Critical patent/JPH0731039A/en
Publication of JPH0731039A publication Critical patent/JPH0731039A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02GINSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G5/00Installations of bus-bars
    • H02G5/06Totally-enclosed installations, e.g. in metal casings
    • H02G5/063Totally-enclosed installations, e.g. in metal casings filled with oil or gas
    • H02G5/065Particle traps

Landscapes

  • Installation Of Bus-Bars (AREA)

Abstract

PURPOSE:To reduce the size while enhancing the reliability by setting the ratio between the diameter of a high voltage conductor and the inner diameter of a metal enclosure larger than a specific value, setting the ratio between the diameter at a joint and the inner diameter of the metal enclosure within a specific range, and coating the bottom of the metal enclosure with a dielectric material in the vicinity of an insulating spacer. CONSTITUTION:A high voltage conductor 5 is made thin such that the ratio D/d1 between the diameter d1 thereof and the inner diameter D of a metal tank 1 is larger than 3.0. The inner diameter d2 at a joint 3 is determined such that the ratio D/d2 between the diameter d2 at the joint 3 and the inner diameter D of the metal tank 1 is in the range of 2.7-3.0. Furthermore, the bottom of the metal tank 1 is coated with a viscous substance 7 in the vicinity of an insulating spacer 4. This structure lowers the electric field on the inner face of the tank while preventing the concentration of the field on the high voltage conductor side without enlarging the metal enclosure thus lowering the electric field at the joint. Consequently, a metallic foreign matter is prevented from adhering to the insulating spacer or shifting to the high voltage conductor side.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ガス絶縁開閉装置(以
下GISという。)の母線部であるガス絶縁母線に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas-insulated busbar which is a busbar portion of a gas-insulated switchgear (hereinafter referred to as GIS).

【0002】[0002]

【従来の技術】従来のガス絶縁母線を図6ないし図8を
参照して説明する。図6に示すように、金属製タンク1
に絶縁性能の優れたSF6 ガス2を3〜6kg/cm2 程度
に加圧封入するとともに、金属製の接続部3を備えたコ
―ン形の絶縁スペ―サ4を配設し、接続部3に高圧導体
5を接続して高圧導体5を金属製タンク1の中央に絶縁
支持する。絶縁スペ―サ4は高圧導体5を支持固定する
とともにSF6 ガス区分を構成する。
2. Description of the Related Art A conventional gas-insulated bus bar will be described with reference to FIGS. As shown in FIG. 6, the metal tank 1
The superior SF 6 gas 2 while pressure sealed about 3~6kg / cm 2 of insulation performance, co with a metallic connection part 3 - down type insulating space - arranged a support 4, connected The high-voltage conductor 5 is connected to the portion 3 to insulate and support the high-voltage conductor 5 in the center of the metal tank 1. The insulating spacer 4 supports and fixes the high-voltage conductor 5 and constitutes an SF 6 gas section.

【0003】このようなガス絶縁母線の設計に当って
は、主に所要の絶縁性能を確保することと、定格電流通
電時に各部の温度上昇が規定値以下となるように金属製
タンク1,接続部3及び高圧導体5の寸法が選定され
る。最近の高電圧化,大容量化に伴い、送電電圧が550K
V ,1100KVと極めて高くなると、寸法の決定要因は、絶
縁性能が支配的になってくる。
In designing such a gas-insulated bus bar, a metal tank 1 and a connection are mainly provided so as to ensure a required insulation performance and to keep the temperature rise of each part below a specified value when a rated current is applied. The dimensions of the part 3 and the high-voltage conductor 5 are selected. With the recent increase in voltage and capacity, transmission voltage is 550K
As V and 1100KV become extremely high, the insulation performance becomes the dominant factor in determining the dimensions.

【0004】ガス絶縁母線の絶縁性能を確保するために
は、高圧導体5の表面の電界がSF6 ガス2の絶縁性能
上支障のない値以下にしなければならず、しかも金属製
タンク1の内面の電界(以下タンク内面電界という)も
所定の値以下に制御する必要がある。このタンク内面電
界の制御について図7を参照して説明する。ガス絶縁母
線内に組立時等に数mm程度の金属異物6が混入している
場合、電圧が印加されていない状態においては図7の状
態Aに示すように、金属異物6は金属製タンク1の底部
に横になっている。しかしながら高圧導体5に電圧が印
加されタンク内面電界E2 が高くなると、この金属異物
6は図7の状態Bに示すように起立し、さらにタンク内
面電界E2 が高くなると、図7の状態Cに示すようにS
6 ガス中を浮上するようになる。この浮上の高さはタ
ンク内面電界E2 が高くなるにつれて増加し、SF6
ス2の絶縁性能を著しく低下させる可能性がある。この
ためガス絶縁母線の諸寸法を決定するには、高圧導体5
の表面電界E1 のみならず、タンク内面電界E2 の値を
考慮する必要がある。
In order to ensure the insulation performance of the gas-insulated busbar, the electric field on the surface of the high-voltage conductor 5 must be below a value that does not impair the insulation performance of the SF 6 gas 2, and the inner surface of the metal tank 1 It is necessary to control the electric field (hereinafter referred to as the tank inner surface electric field) to a predetermined value or less. The control of the electric field on the inner surface of the tank will be described with reference to FIG. When a metal foreign matter 6 of about several mm is mixed in the gas-insulated bus bar at the time of assembly, etc., the metal foreign matter 6 is not contained in the metal tank 1 when no voltage is applied, as shown in the state A of FIG. Lying on the bottom of. However, when a voltage is applied to the high-voltage conductor 5 and the tank inner surface electric field E 2 rises, the metallic foreign matter 6 stands up as shown in state B of FIG. 7, and when the tank inner surface electric field E 2 further rises, state C of FIG. As shown in S
It comes to float in F 6 gas. The flying height increases as the electric field E 2 on the inner surface of the tank increases, and the insulation performance of the SF 6 gas 2 may be significantly reduced. Therefore, to determine the dimensions of the gas-insulated busbar, the high-voltage conductor 5
Not the surface electric field E 1 only, it is necessary to consider the value of the tank inner surface electric field E 2.

【0005】次にタンク内面電界E2 の大きさについ
て、図8を参照して説明する。図8に示すように、接続
部3を備えた絶縁スペ―サ4の近傍以外の部分を領域
X、絶縁スペ―サ4の近傍を領域Yとする。領域Xにお
いては、直径d1 の高圧導体5と内径D1 の金属製タン
ク1の同軸形状からタンク内面電界の大きさが決まる
が、この大きさをタンク内面電界E20とする。一方、絶
縁スペ―サ4の近傍である領域Yにおいては、高圧導体
5を電気的に接続するための接続部3が存在するために
タンク内面電界の大きさが領域Xにおける値と異なる。
すなわち、接続部3の直径d2 は高圧導体5の直径d1
より大きいため、領域Yにおけるタンク内面電界E21
領域Xにおけるタンク内面電界E20よりも大きくなる。
Next, the magnitude of the tank inner surface electric field E 2 will be described with reference to FIG. As shown in FIG. 8, a portion other than the vicinity of the insulating spacer 4 having the connecting portion 3 is defined as a region X, and a portion near the insulating spacer 4 is defined as a region Y. In the region X, the magnitude of the electric field on the tank inner surface is determined by the coaxial shape of the high-voltage conductor 5 having the diameter d 1 and the metal tank 1 having the inner diameter D 1 , and this magnitude is referred to as the tank inner surface electric field E 20 . On the other hand, in the area Y near the insulating spacer 4, the magnitude of the electric field on the inner surface of the tank is different from the value in the area X because of the existence of the connecting portion 3 for electrically connecting the high-voltage conductor 5.
That is, the diameter d 2 of the connecting portion 3 is equal to the diameter d 1 of the high-voltage conductor 5.
Since it is larger, the tank inner surface electric field E 21 in the region Y becomes larger than the tank inner surface electric field E 20 in the region X.

【0006】このように高圧導体5と金属製タンク1が
形成するタンク内面電界E20のみを考慮するのであれ
ば、金属製タンク1の内径D1 は高圧導体5の直径d1
のみによって決定されるので、金属タンク1の内径はD
1 より小さいD2 とすることができる。しかしながら、
金属製タンク1の内径をD2 とすると、絶縁スペ―サ4
の近傍である領域Yにおいては高圧導体5の直径d1
り大きい直径d2 の接続部3が配設されているので、領
域Yにおけるタンク内面電界はE21の 1.2ないし1.5倍
という大きな値になってしまい絶縁性能上問題がある。
If only the tank inner surface electric field E 20 formed by the high-voltage conductor 5 and the metal tank 1 is taken into consideration, the inner diameter D 1 of the metal tank 1 is the diameter d 1 of the high-voltage conductor 5.
The inner diameter of the metal tank 1 is D
It can be D 2 less than 1 . However,
If the inner diameter of the metal tank 1 is D 2 , the insulating spacer 4
Since the connecting portion 3 having a diameter d 2 larger than the diameter d 1 of the high-voltage conductor 5 is arranged in the region Y which is in the vicinity of, the tank inner surface electric field in the region Y has a large value of 1.2 to 1.5 times E 21. And there is a problem in insulation performance.

【0007】そこで従来のガス絶縁母線は、絶縁条件が
最も厳しい絶縁スペ―サの近傍のタンク内面電界にあわ
せて金属製タンクの内径を決定していた。このためGI
S全体が大型化して据え付け面積が増加するとともに、
絶縁スペ―サも大型化するため、絶縁スペ―サの品質、
信頼性を維持するためにより高度な樹脂の注型製造技術
が必要になるという問題があった。
Therefore, in the conventional gas-insulated bus bar, the inner diameter of the metal tank is determined according to the electric field on the inner surface of the tank in the vicinity of the insulation spacer, which has the strictest insulation condition. Therefore GI
As the whole S becomes larger and the installation area increases,
Since the insulation spacer also becomes larger, the quality of the insulation spacer,
There is a problem that a more advanced resin casting manufacturing technique is required to maintain reliability.

【0008】[0008]

【発明が解決しようとする課題】上述のように従来のガ
ス絶縁母線においては、局部的にタンク内面電界が高く
なる絶縁スペ―サ近傍にあわせて金属製タンクの径を決
定していたため、絶縁スペ―サ近傍以外の部分で高圧導
体と金属製タンクの径との比を適正化できずガス絶縁母
線を小型化するのが困難であるという問題があった。そ
こで本発明の目的は、小型でしかも信頼性を向上させた
ガス絶縁母線を提供することにある。
As described above, in the conventional gas-insulated busbar, the diameter of the metal tank is determined according to the vicinity of the insulating spacer where the electric field on the inner surface of the tank is locally increased. There was a problem that it was difficult to miniaturize the gas-insulated busbar because the ratio of the diameter of the high-voltage conductor to the diameter of the metal tank could not be optimized except in the vicinity of the spacer. Therefore, an object of the present invention is to provide a gas-insulated bus bar that is small in size and has improved reliability.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に本発明においては第1の発明として、絶縁ガスを封入
した金属容器に絶縁スペ―サを配設し、この絶縁スペ―
サのほぼ中央部に金属製の接続部を配設し、この接続部
に高圧導体を接続してこの高圧導体を前記金属容器に絶
縁支持したガス絶縁母線において、前記高圧導体の直径
1 と前記金属容器の内径Dとの比D/d1 が 3.0より
も大きく、前記接続部の直径d2 と前記金属容器の内径
Dとの比D/d2 が 2.7以上 3.0以下であり、前記絶縁
スペ―サの近傍の前記金属容器の底部に絶縁材料でコ―
ティングを施したことを特徴とするガス絶縁母線を提供
する。また第2の発明として、前記コ―ティングの代わ
りに、前記金属容器の内面に凹部を形成したことを特徴
とするガス絶縁母線を提供する。
In order to achieve the above object, in the present invention, as a first invention, an insulating spacer is arranged in a metal container filled with an insulating gas, and the insulating space is provided.
In a gas-insulated busbar in which a metal connecting portion is arranged in the substantially central portion of the chamber, a high-voltage conductor is connected to this connecting portion, and the high-voltage conductor is insulated and supported by the metal container, the diameter d 1 of the high-voltage conductor is wherein the ratio D / d 1 of the inner diameter D of the metal container is larger than 3.0, the ratio D / d 2 of the inner diameter D of the metal container and the diameter d 2 of the connecting portion is 2.7 to 3.0, the insulation Coat the bottom of the metal container near the spacer with an insulating material.
Provided is a gas-insulated bus bar, which is characterized by being coated. In addition, as a second invention, there is provided a gas-insulated busbar, characterized in that a recess is formed on the inner surface of the metal container instead of the coating.

【0010】[0010]

【作用】高圧導体の直径d1 と金属容器の内径Dとの比
D/d1 が 3.0よりも大きくなるように高圧導体を細く
することによって電界が高圧導体側に集中し、金属容器
を大型化することなくタンク内面電界を低く制御するこ
とができる。
[Function] By thinning the high-voltage conductor so that the ratio D / d 1 of the diameter d 1 of the high-voltage conductor to the inner diameter D of the metal container is larger than 3.0, the electric field is concentrated on the high-voltage conductor side, and the metal container is large. It is possible to control the electric field on the inner surface of the tank to be low without changing the temperature.

【0011】また、接続部の直径d2 と金属容器の内径
Dとの比D/d2 が 2.7以上 3.0以下になるように接続
部の直径を決定することにより、接続部の表面電界を低
く制御することができる。この場合タンク内面電界が高
くなるが、金属容器の底部に絶縁材料によるコ―ティン
グを施すか、あるいは凹部を形成することにより金属異
物の動きを抑制することが可能となる。従って金属異物
が絶縁スペ―サに付着したり、高圧導体側に移動するの
を防止できしかも金属容器を小型化することができる。
Further, by determining the diameter of the connecting portion such that the ratio D / d 2 of the diameter d 2 of the connecting portion and the inner diameter D of the metal container is 2.7 or more and 3.0 or less, the surface electric field of the connecting portion is lowered. Can be controlled. In this case, the electric field on the inner surface of the tank increases, but the movement of the metallic foreign matter can be suppressed by coating the bottom of the metal container with an insulating material or forming a recess. Therefore, it is possible to prevent foreign metal particles from adhering to the insulating spacer and to move to the high-voltage conductor side, and it is possible to downsize the metal container.

【0012】[0012]

【実施例】本発明の第1の実施例を図1を参照して説明
する。なお、従来と同じ部分には同一の番号を付与して
説明を省略する。図1に示すように、SF6 ガス2を封
入した金属製タンク1に絶縁スペ―サ4を配設し、絶縁
スペ―サ4のほぼ中央部に直径d2 の接続部3を配設す
る。接続部3には直径d1 の高圧導体5を接続して高圧
導体5を金属製タンク1内に絶縁支持する。金属製タン
ク1の絶縁スペ―サ4の近傍には絶縁材料からなる粘着
性物質7がコ―ティングされている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to FIG. It should be noted that the same parts as the conventional ones are given the same numbers and their explanations are omitted. As shown in FIG. 1, an insulating spacer 4 is arranged in a metal tank 1 in which SF 6 gas 2 is sealed, and a connecting portion 3 having a diameter d 2 is arranged substantially in the center of the insulating spacer 4. . A high-voltage conductor 5 having a diameter d 1 is connected to the connecting portion 3 to insulate and support the high-voltage conductor 5 in the metal tank 1. An adhesive substance 7 made of an insulating material is coated in the vicinity of the insulating spacer 4 of the metal tank 1.

【0013】高圧導体5の直径d1 と金属製タンク1の
内径Dとの比D/d1 が 3.0よりも大きくなるように、
高圧導体5は細く構成されている。さらに接続部3の直
径d2 と金属製タンク1の内径Dとの比D/d2 が 2.7
18になるように接続部3は構成されている。
In order that the ratio D / d 1 between the diameter d 1 of the high-voltage conductor 5 and the inner diameter D of the metal tank 1 becomes larger than 3.0,
The high-voltage conductor 5 is thin. Further, the ratio D / d 2 of the diameter d 2 of the connecting portion 3 and the inner diameter D of the metal tank 1 is 2.7.
The connecting portion 3 is configured to be 18.

【0014】次に作用について説明する。本実施例にお
いては、高圧導体5の直径d1 と金属製タンク1の内径
Dとの比D/d1 が 3.0よりも大きくなるように、高圧
導体5は細く構成されている。このため、電界が高圧導
体5側に集中し、金属製タンク1を大型化することなく
タンク内面電界を低く制御することができる。
Next, the operation will be described. In the present embodiment, the high-voltage conductor 5 is thin so that the ratio D / d 1 between the diameter d 1 of the high-voltage conductor 5 and the inner diameter D of the metal tank 1 is larger than 3.0. Therefore, the electric field is concentrated on the high-voltage conductor 5 side, and the electric field on the tank inner surface can be controlled to be low without increasing the size of the metal tank 1.

【0015】一方、接続部3は絶縁スペ―サ4のほぼ中
央に配設され、金属製タンク1と同軸状に配置されてい
る。このため、接続部3と金属製タンク1が形成する電
界は同軸円筒ギャップが形成する電界とみることができ
る。同軸円筒ギャップの最大電位傾度E0 は、
On the other hand, the connecting portion 3 is arranged substantially in the center of the insulating spacer 4 and is arranged coaxially with the metal tank 1. Therefore, the electric field formed by the connecting portion 3 and the metal tank 1 can be regarded as the electric field formed by the coaxial cylindrical gap. The maximum potential gradient E 0 of the coaxial cylindrical gap is

【0016】[0016]

【数1】 ここで、r=d2 /2、R=D/2とする。で表すこと
ができ、接続部3の半径であるrが極めて小なるときは
曲率が大なるためE0 が大きく、またrが極めてRに接
近すればギャップ長が小となるのでE0 が大きく、その
間ではE0 が小さいことを示している。
[Equation 1] Here, the r = d 2/2, R = D / 2. When the radius r of the connecting portion 3 is extremely small, the curvature is large, so that E 0 is large, and when r is extremely close to R, the gap length is small, so that E 0 is large. , in the meantime shows that E 0 is small.

【0017】1/E0 をrで微分してゼロとおいて計算
すると、R/r=eとなる。すなわち、R/rが約 2.7
18であるときE0 が最小となることがわかる。このよう
にR/rすなわちD/d2 を 2.178とすることにより、
絶縁スペ―サ4の表面沿面電界を最小にすることができ
る。ただし、D/d2 を 2.718とすることにより絶縁ス
ペ―サ4の近傍である領域Yのタンク内面電界は領域Y
以外の部分である領域Xのタンク内面電界より高くな
る。そこで電界の高い領域Yに金属異物6が混入した場
合の絶縁を確保するために、絶縁スペ―サ4の近傍の金
属製タンク1の底部には粘着性物質7をコ―ティングす
る。
When 1 / E 0 is differentiated by r and zero is calculated, R / r = e. That is, R / r is about 2.7
It can be seen that E 0 is minimum when it is 18. By setting R / r, that is, D / d 2 to 2.178,
The surface creeping electric field of the insulating spacer 4 can be minimized. However, by setting D / d 2 to 2.718, the electric field on the tank inner surface in the region Y near the insulating spacer 4 is set to the region Y.
It becomes higher than the tank inner surface electric field in the region X which is a portion other than. Therefore, in order to ensure insulation when the foreign metal 6 is mixed in the region Y where the electric field is high, an adhesive substance 7 is coated on the bottom of the metal tank 1 near the insulating spacer 4.

【0018】本実施例のガス絶縁母線の組立時に、金属
異物6が金属製タンク1内に混入した場合、金属異物6
は金属製タンク1の底部に落下する。絶縁スペ―サ4の
近傍である領域Yにおいては粘着性物質7がコ―ティン
グされているので、金属異物6は粘着性物質7に捕捉さ
れる。一方、金属異物6が領域Xに落下した場合、高圧
導体5に電圧が印加されると領域Xよりも領域Yで電界
が高いため、金属異物6は領域Yに向かって移動する。
領域Yに侵入した金属異物6は粘着物質7に捕捉され
る。
When the metal foreign matter 6 is mixed into the metal tank 1 during the assembly of the gas-insulated bus bar of this embodiment, the metal foreign matter 6
Fall to the bottom of the metal tank 1. Since the adhesive substance 7 is coated in the area Y near the insulating spacer 4, the metallic foreign matter 6 is captured by the adhesive substance 7. On the other hand, when the foreign metal 6 drops in the region X, when a voltage is applied to the high-voltage conductor 5, the electric field in the region Y is higher than in the region X, so the foreign metal 6 moves toward the region Y.
The metallic foreign matter 6 that has entered the region Y is captured by the adhesive substance 7.

【0019】このように本実施例によれば、高圧導体5
の直径d1 と金属製タンク1の内径Dとの比D/d1
3.0よりも大きくなるように高圧導体5を細くし、接続
部3の直径d2 と金属製タンク1の内径Dとの比D/d
2 を 2.718になるように接続部3を構成し、さらに絶縁
スペ―サ4の近傍の金属製タンク1に底部には粘着性物
質7をコ―ティングする。このため、絶縁スペ―サ4の
表面沿面電界が最小となり、高圧導体5の直径と金属製
タンク1の内径の比を適正化することができ、金属製タ
ンク1内を金属異物6が移動するのを抑制できるため、
小型で信頼性を向上させたガス絶縁母線を提供すること
ができる。
As described above, according to this embodiment, the high voltage conductor 5
The ratio D / d 1 of the diameter d 1 to the inner diameter D of the metal tank 1 is
The high-voltage conductor 5 is made thin so as to be larger than 3.0, and the ratio D / d of the diameter d 2 of the connecting portion 3 and the inner diameter D of the metal tank 1 is D / d.
The connecting portion 3 is constructed so that 2 becomes 2.718, and the adhesive tank 7 is coated on the bottom of the metal tank 1 near the insulating spacer 4. Therefore, the surface creeping electric field of the insulating spacer 4 is minimized, the ratio of the diameter of the high-voltage conductor 5 and the inner diameter of the metal tank 1 can be optimized, and the metal foreign matter 6 moves in the metal tank 1. Can be suppressed,
It is possible to provide a gas-insulated bus bar that is small and has improved reliability.

【0020】なお、本実施例において、絶縁スペ―サ4
近傍の金属製タンク1の底部に配設するのは粘着性物質
7に限定するものではなく、塗料のような絶縁材料でも
よい。この場合、金属異物6の浮上電界が改善されるた
め、領域Yに入り込んだ金属異物6が再び起立・浮上す
ることがなくなるため同様の効果が得られる。
In this embodiment, the insulating spacer 4
It is not limited to the adhesive substance 7 to be provided at the bottom of the metal tank 1 in the vicinity, and an insulating material such as paint may be used. In this case, since the floating electric field of the metallic foreign matter 6 is improved, the metallic foreign matter 6 that has entered the region Y does not stand up and float again, and the same effect can be obtained.

【0021】本発明の第2の実施例を図2を参照して説
明する。なお、従来と同じ部分には同一の番号を付与し
て説明を省略する。図2に示すように、本実施例におい
ては粘着性物質7をコ―ティングする代わりに、絶縁ス
ペ―サ4の近傍の金属製タンク1の底部に凹部8を形成
することを特徴とし、この点以外は第1の実施例と同様
である。
A second embodiment of the present invention will be described with reference to FIG. It should be noted that the same parts as the conventional ones are given the same numbers and their explanations are omitted. As shown in FIG. 2, the present embodiment is characterized in that instead of coating the adhesive substance 7, a recess 8 is formed in the bottom of the metal tank 1 near the insulating spacer 4. The other points are the same as those in the first embodiment.

【0022】本実施例においては、領域Yに移動してき
た金属異物6は凹部8に落下する。凹部8におけるタン
ク内面電界はその周囲に比べて低いため、金属異物6が
凹部8の外部に再び飛び出すことはなく、金属異物6を
捕捉することができる。
In this embodiment, the metallic foreign matter 6 that has moved to the area Y falls into the recess 8. Since the electric field on the inner surface of the tank in the concave portion 8 is lower than that in the surrounding area, the metallic foreign matter 6 does not fly out of the concave portion 8 again and the metallic foreign matter 6 can be captured.

【0023】このように本実施例においても第1の実施
例と同様の効果を奏する。なお、凹部の内面に粘着性物
質あるいは塗料などの絶縁材料から成るコ―ティングを
施すとさらに確実に金属異物を捕捉することができる。
As described above, this embodiment also has the same effect as that of the first embodiment. If the inner surface of the recess is coated with an adhesive material or an insulating material such as paint, the foreign metal can be more reliably captured.

【0024】次に本発明の第3の実施例を図3を参照し
て説明する。本実施例においては、領域Xで高圧導体5
の下側に開口部9を形成し、開口部9の周囲に粘着性物
質10を塗布した点以外は第1の実施例と同様の構成を有
する。
Next, a third embodiment of the present invention will be described with reference to FIG. In the present embodiment, the high voltage conductor 5 in the region X
The structure is similar to that of the first embodiment except that the opening 9 is formed on the lower side and the adhesive substance 10 is applied to the periphery of the opening 9.

【0025】本実施例において、高圧導体5の直径d1
と金属製タンク1の直径DについてはD/d1 が 3.0よ
り大きい、という関係が成立するためタンク内面電界は
低く制御されている。一方万一金属異物が領域X内を運
動するようになっても、高圧導体5には開口部9が形成
されているので、金属異物は他の部分よりも電界の高い
開口部9の周辺に集められ、開口部9の周囲に塗布され
た粘着性物質10に捕捉される。
In the present embodiment, the diameter d 1 of the high voltage conductor 5
As for the diameter D of the metal tank 1, D / d 1 is larger than 3.0, the electric field on the inner surface of the tank is controlled to be low. On the other hand, even if the metallic foreign matter moves in the region X, the opening 9 is formed in the high-voltage conductor 5, so that the metallic foreign matter is located around the opening 9 having a higher electric field than the other portions. Collected and captured by the sticky substance 10 applied around the opening 9.

【0026】このように本実施例は高圧導体5にも金属
異物のトラップ部を形成したことにより、上述した第
1、第2の実施例と同様の効果を奏するのはもちろん、
さらに絶縁性能が向上し、信頼性が高くなるという効果
がある。
As described above, in this embodiment, the trap portion for the metallic foreign matter is formed also in the high-voltage conductor 5, so that the same effects as those of the above-described first and second embodiments can be obtained.
Further, there is an effect that the insulation performance is improved and the reliability is increased.

【0027】第4の実施例を図4を参照して説明する。
本実施例においては第3の実施例の開口部の代わりに、
高圧導体5の周囲に溝部11を形成し、溝部11の周辺に粘
着性物質12を塗布することを特徴とする。
A fourth embodiment will be described with reference to FIG.
In this embodiment, instead of the opening of the third embodiment,
A feature is that a groove 11 is formed around the high-voltage conductor 5 and an adhesive substance 12 is applied to the periphery of the groove 11.

【0028】溝部11も開口部と同様に他の部分に比べて
電界が高くなるので溝部11に積極的に金属異物を集め、
粘着性物質12で金属異物を捕捉することにより第3の実
施例と同様の効果を奏する。
Similarly to the opening, the electric field of the groove 11 is higher than that of the other portions. Therefore, metal foreign matter is positively collected in the groove 11,
By capturing the metallic foreign matter with the adhesive substance 12, the same effect as that of the third embodiment is obtained.

【0029】第5の実施例を図5を参照して説明する。
開口部や溝部の代わりに高圧導体5に凸部13を形成し、
凸部13に粘着性物質14を塗布しても第3、第4の実施例
と同様の効果を奏する。
A fifth embodiment will be described with reference to FIG.
In place of the opening and the groove, the convex portion 13 is formed on the high-voltage conductor 5,
Even if the adhesive material 14 is applied to the convex portion 13, the same effects as those of the third and fourth embodiments can be obtained.

【0030】なお、第3、第4、第5の実施例において
粘着性物質10,12,14の代わりに塗料をコ―ティングし
てもよく、領域Yの金属製タンク1の底部には粘着性物
質7をコ―ティングする代わりに凹部8を形成しても同
様の効果を奏することはもちろんである。
Incidentally, in the third, fourth and fifth embodiments, a coating material may be coated instead of the adhesive substances 10, 12 and 14, and the adhesive material is adhered to the bottom of the metal tank 1 in the region Y. Of course, the same effect can be obtained even if the concave portion 8 is formed instead of coating the sexual substance 7.

【0031】[0031]

【発明の効果】以上のように本発明によれば、高圧導体
の直径d1 と金属容器の内径Dとの比D/d1 を 3.0よ
りも大きくし、接続部の直径d2 と金属容器の内径Dと
の比D/d2 を 2.7以上 3.0以下とし、絶縁スペ―サの
近傍の金属容器の底部に絶縁材料でコ―ティングを施す
か、または凹部を形成することにより、小型で信頼性を
向上させたガス絶縁母線を提供することができる。
As described above, according to the present invention, the ratio D / d 1 between the diameter d 1 of the high-voltage conductor and the inner diameter D of the metal container is set to be larger than 3.0, and the diameter d 2 of the connecting portion and the metal container are set. The ratio of the inner diameter D to D / d 2 is 2.7 or more and 3.0 or less, and the bottom of the metal container near the insulation spacer is coated with an insulating material or a recess is formed to make it small and reliable. It is possible to provide a gas-insulated bus bar having improved properties.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示すガス絶縁母線の断
面図。
FIG. 1 is a sectional view of a gas-insulated bus bar showing a first embodiment of the present invention.

【図2】本発明の第2の実施例を示すガス絶縁母線の断
面図。
FIG. 2 is a sectional view of a gas-insulated bus bar showing a second embodiment of the present invention.

【図3】本発明の第3の実施例を示すガス絶縁母線の断
面図。
FIG. 3 is a sectional view of a gas insulated bus bar showing a third embodiment of the present invention.

【図4】本発明の第4の実施例を示すガス絶縁母線の断
面図。
FIG. 4 is a sectional view of a gas insulated bus bar showing a fourth embodiment of the present invention.

【図5】本発明の第5の実施例を示すガス絶縁母線の断
面図。
FIG. 5 is a sectional view of a gas-insulated bus bar showing a fifth embodiment of the present invention.

【図6】従来のガス絶縁母線の断面図。FIG. 6 is a sectional view of a conventional gas-insulated bus bar.

【図7】金属異物の挙動を示す説明図。FIG. 7 is an explanatory diagram showing the behavior of a metallic foreign matter.

【図8】ガス絶縁母線のタンク内面電界の説明図。FIG. 8 is an explanatory diagram of an electric field on the tank inner surface of the gas insulated busbar.

【符号の説明】[Explanation of symbols]

1…金属製タンク、2…SF6 ガス、3…接続部、4…
絶縁スペ―サ、5…高圧導体、7…粘着性物質、8…凹
1 ... Metal tank, 2 ... SF 6 gas, 3 ... Connection part, 4 ...
Insulation spacer, 5 ... High voltage conductor, 7 ... Adhesive substance, 8 ... Recess

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 絶縁ガスを封入した金属容器に絶縁スペ
―サを配設し、この絶縁スペ―サのほぼ中央部に金属製
の接続部を配設し、この接続部に高圧導体を接続してこ
の高圧導体を前記金属容器に絶縁支持したガス絶縁母線
において、 前記高電圧導体の直径d1 と前記金属容器の内径Dとの
比D/d1 が 3.0よりも大きく、前記接続部の直径d2
と前記金属容器の内径Dとの比D/d2 が 2.7以上 3.0
以下であり、前記絶縁スペ―サの近傍の前記金属容器の
底部に絶縁材料でコ―ティングを施したことを特徴とす
ることを特徴とするガス絶縁母線。
1. An insulating spacer is provided in a metal container filled with an insulating gas, a metal connecting portion is provided at substantially the center of the insulating spacer, and a high-voltage conductor is connected to this connecting portion. Then, in the gas-insulated busbar in which the high-voltage conductor is insulated and supported in the metal container, the ratio D / d 1 between the diameter d 1 of the high-voltage conductor and the inner diameter D of the metal container is larger than 3.0, and Diameter d 2
And the ratio D / d 2 of the inner diameter D of the metal container is 2.7 or more 3.0
The gas-insulated bus bar is characterized in that the bottom part of the metal container near the insulating spacer is coated with an insulating material.
【請求項2】 前記コ―ティングの代わりに、前記金属
容器の内面に凹部を形成したことを特徴とする請求項1
記載のガス絶縁母線。
2. A recess is formed on the inner surface of the metal container instead of the coating.
Gas-insulated bus bar as described.
JP5171273A 1993-07-12 1993-07-12 Gas insulated bus Pending JPH0731039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5171273A JPH0731039A (en) 1993-07-12 1993-07-12 Gas insulated bus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5171273A JPH0731039A (en) 1993-07-12 1993-07-12 Gas insulated bus

Publications (1)

Publication Number Publication Date
JPH0731039A true JPH0731039A (en) 1995-01-31

Family

ID=15920272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5171273A Pending JPH0731039A (en) 1993-07-12 1993-07-12 Gas insulated bus

Country Status (1)

Country Link
JP (1) JPH0731039A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007267506A (en) * 2006-03-28 2007-10-11 Toshiba Corp Gas-insulated bus
EP3509176B1 (en) * 2016-08-31 2024-04-03 Kabushiki Kaisha Toshiba Gas-insulated switchgear and method for capturing metal impurities inside gas-insulated switchgear

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007267506A (en) * 2006-03-28 2007-10-11 Toshiba Corp Gas-insulated bus
JP4575323B2 (en) * 2006-03-28 2010-11-04 株式会社東芝 Gas insulated bus
EP3509176B1 (en) * 2016-08-31 2024-04-03 Kabushiki Kaisha Toshiba Gas-insulated switchgear and method for capturing metal impurities inside gas-insulated switchgear

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