JPH07307283A - Projection exposure device - Google Patents

Abstract

PURPOSE:To provide a projection exposure device having high accuracy, facilitat ing spatial arrangement with a projection optical system and having an align ment detection system without the deterioration of the performance of the projection optical system. CONSTITUTION:A mask image is formed on a plate 32 through Dyson optical systems 24-31 by light from a mask 22 lightened by exposure light having a specified wavelength from an illumination optical system 21. Dichroic films, which reflect exposure light and through which alignment light is transmitted, are formed on the concave reflecting surfaces 26a, 30a of the Dyson optical systems. Alignment systems 40-44 for the mask and alignment systems 50-54 for the plate irradiate the mask and the plate with alignment light through the dichroic films respectively, and the positional information of the mask and the plate is detected by alignment light transmitted through the dichroic films respectively.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus, and more particularly to a projection exposure apparatus used for manufacturing circuit boards such as semiconductors and liquid crystal display panels.

[0002]

2. Description of the Related Art As a conventional projection exposure apparatus of this type, for example, there is an apparatus disclosed in U.S. Pat. No. 4,425,037 and Japanese Patent Publication No. 5-28487. In the apparatus disclosed in the above-mentioned U.S. Pat. No. 5,849,863, the concave reflecting surface of the projection optical system is provided with a hole through which alignment light passes. on the other hand,
In the apparatus disclosed in Japanese Examined Patent Publication No. 5-28487, the alignment detection system is provided independently of the projection optical system, and the projection optical system is not used.

[0003]

As described above, in the conventional projection exposure apparatus disclosed in the above-mentioned U.S. Pat. No. 5,837,963, the concave reflection surface of the projection optical system is provided with a hole through which alignment light passes. In this case, it is necessary to limit the size of the holes formed in the concave reflecting surface so as not to adversely affect the exposure performance. Therefore, it is difficult to form a hole having a sufficiently large size for alignment, that is, it is difficult to obtain a sufficiently large numerical aperture as an alignment detection system, and the heights of the mask surface (object surface) and the substrate surface (image surface) are high. There is a disadvantage that accurate alignment cannot be performed. Furthermore, since the concave reflecting surface is the pupil surface of the projection optical system, blocking the exposure light at the concave reflecting surface, which is the pupil surface, causes a substantial decrease in the numerical aperture of the projection optical system, which reduces the resolution of the apparatus. There was also the inconvenience of worsening.

On the other hand, in the conventional projection exposure apparatus disclosed in Japanese Patent Publication No. 5-28487, since the alignment detection system does not use the projection optical system, it is difficult to perform the alignment using the pattern in the exposure area. There was an inconvenience. In addition, since an optical system dedicated to alignment must be interposed between the mask and the substrate, it is spatially difficult to arrange the projection optical system and the alignment detection system in parallel.

The present invention has been made in view of the above-mentioned problems, and provides an alignment detection system which is highly accurate and can be easily arranged spatially with the projection optical system without deteriorating the performance of the projection optical system. It is an object of the present invention to provide a projection exposure apparatus having the same.

[0006]

In order to solve the above-mentioned problems, in the present invention, while the mask and the substrate are moved relative to the projection optical system, the exposure light of a predetermined wavelength is applied onto the mask. In a projection exposure apparatus that projects and exposes the formed pattern onto the substrate via the projection optical system, the projection optical system includes a concave reflecting surface having a concave surface facing the incident side of the exposure light, and the concave reflecting surface. A Dyson type optical system having a lens component having a convex surface directed to the side, wherein the concave reflection surface of the projection optical system is provided with a thin film having a function of transmitting at least a part of alignment light, The mask and the substrate are irradiated with alignment light through the concave reflection surface of the system, and the reflection light from the mask and the substrate is caused by the alignment light through the concave reflection surface. By receiving, to provide a projection exposure apparatus characterized by comprising an alignment detection system for detecting the positional information of the mask and the substrate.

According to a preferred aspect of the present invention, the projection optical system comprises a first Dyson type partial optical system for forming an intermediate image of a pattern formed on the mask, and the intermediate image on the substrate. And a second Dyson type partial optical system for re-imaging. In this case, the alignment detection system irradiates the mask with alignment light through the concave reflecting surface of the first Dyson type partial optical system, and reflects the reflected light from the mask through the concave reflecting surface. A mask alignment system for receiving light to detect position information of the mask, and irradiating the substrate with alignment light through the concave reflection surface of the second Dyson type partial optical system, and the concave reflection surface. It is preferable to provide a substrate alignment system for receiving the reflected light from the substrate via the and detecting the positional information of the substrate.

The thin film is a dichroic film that transmits the alignment light and reflects the exposure light,
Alternatively, it is preferably composed of a semi-transmissive film that semi-transparents both the alignment light and the exposure light.

[0009]

According to the present invention, when the projection optical system is a Dyson type optical system, at least the alignment light is applied to its concave reflecting surface, and when the projection optical system is an Offner type optical system, to its convex reflecting surface. Is provided with a thin film that transmits a part of the. Specifically, the thin film includes a dichroic film that reflects exposure light and transmits alignment light, and a semi-transmissive film that semi-transmits both exposure light and alignment light.

Therefore, in the alignment operation, the alignment light is incident on the projection optical system via the concave reflection surface or the convex reflection surface, and the reflected light from the mask and the substrate is received to detect the position information of the mask and the substrate. To do. Generally, the resolving power of the projection optical system and the alignment detection system is proportional to the numerical aperture of the optical system. In the case of the projection exposure apparatus of the present invention, the numerical aperture of the projection optical system and the numerical aperture of the alignment detection system are both proportional to the effective diameter of the concave reflection surface or the convex reflection surface on which the dichroic film or the semi-transmissive film is formed. Become. That is, the resolution of the projection optical system and the resolution of the alignment detection system become better as the effective diameter of the concave reflecting surface or the convex reflecting surface becomes larger.

As described above, in the configuration of the present invention, a light beam having the same diameter as the exposure light of the projection optical system can be passed as the alignment light. Therefore, apart from the influence of the wavelength difference between the exposure light and the alignment light (non-exposure light), the maximum resolution can be obtained for the alignment detection system using the projection optical system. As a result, the position resolution of the alignment detection system is improved, and highly accurate alignment can be performed.

[0012]

Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram showing the configuration of a projection exposure apparatus according to the first embodiment of the present invention. In FIG. 1, the direction in which the mask 22 on which a predetermined circuit pattern is formed and the plate 32 made of, for example, a glass substrate coated with a resist are scanned is the X axis, and the direction orthogonal to the X axis in the plane of the mask 22. Is the Y axis, and the normal direction of the mask 22 is the Z axis.

The projection exposure apparatus shown includes an illumination optical system 21 for uniformly illuminating a mask 22 in the XY plane in the figure. Below the mask 22, a projection optical system including two partial optical systems is arranged. Each partial optical system,
Each has the same configuration. Below the projection optical system, a plate 32 is mounted on a stage 33 so as to be substantially parallel to the XY plane. A reference pattern 34 is fixed on the stage 33, and the reference pattern 34 is at the same height as the plate 32 (position in the Z direction).

As shown in FIG. 1, the projection optical system includes a first partial optical system (24 to 27), a field stop (not shown), and
It is composed of the second partial optical system (28 to 31). The first partial optical system (24 to 27) and the second partial optical system (28 to 31) are Dyson type optical systems and have the same configuration.

The first partial optical system is a rectangular prism 24 for deflecting the light from the mask 22 in the X-axis direction (right side in the figure).
A plano-convex lens 25 for converging the light reflected by the prism 24, and a concave reflecting surface 26a for reflecting the light passing through the plano-convex lens 25 back to the plano-convex lens 25,
It comprises a right-angle prism 27 which deflects the light incident through the plano-convex lens 25 downward in the drawing. As mentioned above, the first
The partial optical system and the second partial optical system have exactly the same configuration. Therefore, although the constituent elements of the second partial optical system are given different reference numerals from the constituent elements of the first partial optical system, redundant description of the configuration of the second partial optical system will be omitted.

In this way, the illumination light transmitted through the mask 22 is deflected to the right side in the figure by the prism 24, and the plano-convex lens 2
It is incident on 5. The light converged by the plano-convex lens 25 is reflected to the left side in the figure by the concave reflecting surface 26a, and the plano-convex lens 2 again.
It is incident on 5. The light that has passed through the plano-convex lens 25 is deflected downward in the figure by the prism 27, and the first partial optical system and the second partial optical system
A primary image of the pattern of the mask 22 is formed between the partial optical system and the partial optical system. Thus, the first partial optical system (24-2
The primary image formed by 7) is a unity-magnification image of the mask 22 having a positive lateral magnification in the X direction and a negative lateral magnification in the Y direction. A field stop (not shown) is arranged at the position where the primary image is formed.

The light from the primary image that has passed through the field stop is
It is deflected to the right side in the drawing by the prism 28 of the partial optical system, and enters the plano-convex lens 29. The light converged by the plano-convex lens 29 is reflected to the left side in the figure by the concave reflecting surface 30a and enters the plano-convex lens 29 again. The light that has passed through the plano-convex lens 29 is deflected downward in the drawing by the prism 31, and the plate 32
A secondary image of the pattern of the mask 22 is formed on it.

As described above, the first partial optical system and the second partial optical system
The second partial optical system has the same configuration as that of the second partial optical system, and the second partial optical system forms a unity-magnification image of a primary image having a positive lateral magnification in the X direction and a negative lateral magnification in the Y direction. Therefore, the secondary image formed on the plate 32 via the first and second partial optical systems becomes an equal-size erect image of the mask 22 (an image in which the lateral magnification in both the X and Y directions is positive). .

On the other hand, the alignment detection system of FIG.
Mask alignment system for detecting the positional information of the mask 22 through the partial optical system of FIG. 3, a substrate alignment system for detecting the positional information of the plate 32 through the second partial optical system, and the stage 33. And a monitor optical system 35 provided below. In the figure, the mask alignment system and the substrate alignment system have different reference numerals, but the two alignment detection systems have exactly the same configuration. Therefore, the configuration of the mask alignment system will be described, and the description of the substrate alignment system will be omitted.

The mask alignment system includes a light source (not shown) that emits non-exposure light. A part of the alignment light beam 45 from the light source passes through the semi-transmissive mirror 42, is refracted by the concave lens (or negative refractive power lens group) 41 and the convex lens (or positive refractive power lens group) 40, and the positive meniscus lens 26. Incident on. The concave reflecting surface 26a of the positive meniscus lens 26 is a dichroic film that reflects exposure light and transmits alignment light.
Alternatively, it is formed on a semi-transmissive film that semi-transmits (that is, semi-reflects) both the exposure light and the alignment light.

Therefore, the alignment light passes through the positive meniscus lens 26 and illuminates the pattern 23 on the mask 22 via the plano-convex lens 25 and the right-angle prism 24. The alignment light reflected by the pattern 23 travels backward in the optical path and is reflected upward by the semi-transmissive mirror 42 in the figure. The alignment light reflected by the semi-transmissive mirror 42 forms an image on the image sensor 44 via the lens 43. Thus
The position information of the pattern 23 on the mask 22 in the XY plane can be detected from the image position of the pattern 23 formed on the image sensor 44. As described above, in the mask alignment system, the alignment light 45 is directed to the upper left in the drawing so that the alignment light is not guided to the plate side, that is, the alignment light is incident on the prism 24 instead of the prism 27. It is attached.

The alignment operation of the projection exposure apparatus of the first embodiment constructed as above will be described with reference to FIG. First, as the first step, the mask 2
The second pattern 23 is illuminated by the illumination optical system 21, and the image of the pattern 23 is observed by the monitor optical system 35. Then, the stage 33 is moved so that the image of the reference pattern 34 on the stage 33 and the image of the pattern 23 of the mask 22 coincide with each other.
Move appropriately in the Y plane. Thus, by the first step, the position of the reference pattern 34 on the stage 33 in the XY plane and the position of the pattern 23 of the mask 22 in the XY plane are matched.

In the second step, the positional information of the reference pattern 34 is detected by the substrate alignment system. The stage 33 is stationary during the second step. As described above, the alignment light (non-exposure light) 55 emitted from the light source (not shown) of the substrate alignment system passes through the semi-transmissive mirror 52 and is refracted by the concave lens 51 and the convex lens 50.
It is incident on the positive meniscus lens 30. The alignment light transmitted through the positive meniscus lens 30 illuminates the reference pattern 34 on the stage 33 via the plano-convex lens 29 and the rectangular prism 31.

The alignment light reflected by the reference pattern 34 goes backward in the optical path and is reflected by the semi-transmissive mirror 52 downward in the drawing. The alignment light reflected by the semi-transmissive mirror 52 forms an image on the image sensor 54 via the lens 53.
In this way, the reference pattern 34 imaged on the image sensor 54 is formed.
The position of the reference pattern 34 in the XY plane is detected based on the image position of, and the detected position is stored. In addition, the reference pattern 3 on the stage 33 is generated by the operation of the first step.
4 and the pattern 23 of the mask 22 coincide with each other in the XY plane, it is necessary to detect and store the position of the reference pattern 34 on the stage 33 in the XY plane, that is, the pattern 23 of the mask 22. It is nothing but the detection and storage of the position in the XY plane.

In the third step, the positional information of the pattern 23 on the mask 22 is detected by the mask alignment system. As described above, the alignment light (non-exposure light) 45 emitted from the light source (not shown) of the mask alignment system passes through the semi-transmissive mirror 42, and the concave lens 41 and the convex lens 4
It is refracted at 0 and enters the positive meniscus lens 26. The alignment light transmitted through the positive meniscus lens 26 passes through the plano-convex lens 25 and the right-angled prism 24 and then the mask 2
Illuminate the second pattern 23.

The alignment light reflected by the pattern 23 travels backward in the optical path and is reflected upward by the semi-transmissive mirror 42 in the figure. The alignment light reflected by the semi-transmissive mirror 42 forms an image on the image sensor 44 via the lens 43. Thus, the position of the pattern 23 in the XY plane is detected based on the image position of the pattern 23 formed on the image sensor 44, and the detected position is stored.

When the exposure of the plate 32 is once completed and replaced with another plate 32d, the stage is adjusted so that the pattern on the plate 32d matches the position stored in the substrate alignment system in the second step. Three
Move 3 Since this position is also the same as the pattern 23 of the mask 22, the mask 22 and the plate 3 are
The alignment with 2d will be completed. In addition, when the exposure of the mask 22 is once completed and replaced with another mask 22d, the first to third steps may be performed again. Further, when the exposure of the mask 22 is once completed and is exchanged with another mask 22d, the mask stage (non-alignment) is set so that the pattern on the mask 22d matches the position stored by the mask alignment system in the third step. (Shown) is moved to complete the alignment between the mask 22d and the plate 32.

FIG. 2 is a view showing the arrangement of a projection exposure apparatus according to the second embodiment of the present invention. In the projection exposure apparatus of the first embodiment, the projection optical system is composed of two Dyson type partial optical systems, but in the projection exposure apparatus of the second embodiment, the projection optical system is basically composed of one Dyson type optical system. Differently. Along with this, in the second embodiment, the alignment lights of both the mask alignment system and the substrate alignment system are guided to the mask and the plate respectively via the same Dyson type optical system. The operation is similar to that of the alignment detection system of the first embodiment. Therefore, the description will be given focusing on the structural difference from the first embodiment, and the overlapping description of the alignment operation will be omitted.

In the projection exposure apparatus of FIG. 2, a projection optical system composed of a Dyson type optical system is arranged below the mask 71, and the plate 81 is arranged below the projection optical system so as to be substantially parallel to the XY plane. It is placed on a stage (not shown). The projection optical system includes a right-angle prism 72a that deflects the light from the mask 71 in the X-axis direction (right side in the drawing), a plano-convex lens 73 for converging the light reflected by the prism 72a, and the plano-convex lens 73. It is composed of a concave reflecting surface 74a that reflects the passing light again to the plano-convex lens 73, and a right-angle prism 72b that deflects the light incident through the plano-convex lens 73 downward in the figure.

In this way, the illumination light transmitted through the mask 71 is deflected to the right side in the figure by the prism 72a and enters the plano-convex lens 73. The light converged by the plano-convex lens 73 is reflected to the left side in the figure by the concave reflecting surface 74a and enters the plano-convex lens 73 again. The light passing through the plano-convex lens 73 is deflected downward in the figure by the prism 72b, and a pattern image of the mask 71 is formed on the plate 81. In this way, the pattern image of the mask 71 formed on the plate 81 is
Since the lateral magnification in the X direction is positive and the lateral magnification in the Y direction is negative,
It becomes a 1: 1 mirror image.

On the other hand, the alignment detection system of FIG. 2 includes a mask alignment system for detecting the positional information of the mask 71 and a substrate alignment system for detecting the positional information of the plate 81. In the figure, the mask alignment system and the substrate alignment system have different reference numerals, but the two alignment detection systems basically have the same configuration.

In the projection exposure apparatus of FIG. 2, the mask alignment system includes a light source (not shown) that emits non-exposure light. A part of the alignment light flux 80M from the light source passes through the semi-transmissive mirror 77, is refracted by the concave lens 76 and the convex lens 75, and enters the positive meniscus lens 74. Concave reflective surface 74a of positive meniscus lens 74
Is formed on a dichroic film that reflects exposure light and transmits alignment light, or on a semi-transmissive film that semi-transmits (ie, semi-reflects) both exposure light and alignment light.

Therefore, the alignment light passes through the positive meniscus lens 74 and illuminates the pattern on the mask 71 via the plano-convex lens 73 and the right-angle prism 72a. The alignment light reflected by the pattern travels backward in the optical path and is reflected upward by the semi-transmissive mirror 77 in the figure. The alignment light reflected by the semi-transmissive mirror 77 is reflected by the lens 78.
An image is formed on the image pickup element 79M via. In this way, the position information of the pattern on the mask 71 in the XY plane can be detected from the image position of the pattern formed on the image sensor 79M.

On the other hand, the substrate alignment system includes a light source (not shown) which emits non-exposure light. Part of the alignment light flux 80S from the light source is a semi-transmissive mirror 7.
The light passes through 7, is refracted by the concave lens 76 and the convex lens 75, and enters the positive meniscus lens 74. The alignment light passes through the positive meniscus lens 74, and the plano-convex lens 73
And a reference pattern (not shown) is illuminated through the right-angle prism 72b. The alignment light reflected by the reference pattern travels backward in the optical path and is reflected upward by the semi-transmissive mirror 77 in the figure. The alignment light reflected by the semi-transmissive mirror 77 forms an image on the image sensor 79S via the lens 78. In this way, the position information of the reference pattern in the XY plane can be detected from the image position of the reference pattern formed on the image sensor 79S.

As described above, in the mask alignment system, the alignment light 80M is directed to the upper left in the figure so that the alignment light is guided to the mask side, that is, the alignment light is incident on the prism 72a. . On the other hand, in the substrate alignment system, the alignment light 80S is directed to the lower left in the drawing so that the alignment light is guided to the plate side, that is, the alignment light is incident on the prism 72b. The alignment operation is the same as that of the first embodiment, and the redundant description will be omitted.

FIG. 3 is a view showing the arrangement of a projection exposure apparatus according to the third embodiment of the present invention. First embodiment and second
In the projection exposure apparatus of the example, the projection optical system is a Dyson type optical system, but the projection exposure system according to the third example is basically different in that the projection optical system is an Offner type optical system. Since the projection optical system is of the Offner type, the configuration of the alignment detection system also differs from that of the alignment detection systems of the first and second embodiments. However, the basic alignment operation is similar.

In the projection exposure apparatus of FIG. 3, a projection optical system consisting of an Offner type optical system is arranged below the mask 90, and the plate 94 is arranged below the projection optical system so as to be substantially parallel to the XY plane. It is placed on a stage (not shown). The projection optical system includes a reflecting mirror 91a for deflecting the light from the mask 90 in the X-axis direction (right side in the drawing), and a concave reflecting mirror 92 for reflecting the light reflected by the reflecting mirror 91a to the left side in the drawing. , The convex reflecting surface 93a for reflecting the light reflected by the concave reflecting mirror 92 toward the concave reflecting mirror 92 again, and the light reflected again on the left side in the drawing by the concave reflecting mirror 92 is deflected downward in the drawing. And a reflecting mirror 91b.

Thus, the illumination light transmitted through the mask 90 is deflected to the right side in the figure by the reflecting mirror 91a, and the concave reflecting mirror 9
Incident on 2. The light reflected by the concave reflecting mirror 92 is reflected by the convex reflecting surface 93a to the right side in the figure, and is again reflected by the concave reflecting mirror 9a.
Incident on 2. The light reflected again by the concave reflecting mirror 92 is
The pattern image of the mask 90 is formed on the plate 94 by being deflected downward in the drawing by the reflecting mirror 91b. in this way,
The pattern image of the mask 90 formed on the plate 94 is an equal-magnification image in which the lateral magnification in the X direction is positive and the lateral magnification in the Y direction is negative.

On the other hand, the alignment detection system shown in FIG. 3 includes a mask alignment system for detecting the positional information of the mask 90 and a substrate alignment system for detecting the positional information of the plate 94. In the figure, the mask alignment system and the substrate alignment system have different reference numerals, but the two alignment detection systems basically have the same configuration. Therefore, only the configuration of the mask alignment system will be described, and description of the configuration of the substrate alignment system will be omitted.

The mask alignment system includes a light source 102M which emits non-exposure light. The alignment light from the light source 102M is reflected upward in the drawing by the reflecting mirror 101M and passes through the semi-transmissive mirror 99M. The alignment light transmitted through the semi-transmissive mirror 99M is magnified optical system 98M.
The light is deflected to the right side in the drawing by the right-angled prism 97 via the illuminating light and illuminates the field stop 96. The field stop 96 is conjugated with the mask 90 and the plate 94 by an intervening optical system.

The light passing through the field stop 96 enters the convex lens 93 via the relay lens system 95. Convex lens 9
The convex reflecting surface 93a of No. 3 is formed on a dichroic film that reflects exposure light and transmits alignment light, or on a semi-transmissive film that semi-transmits (ie, semi-reflects) both exposure light and alignment light. There is.

Therefore, the alignment light is reflected by the convex lens 9
Then, the pattern on the mask 90 is illuminated through the concave reflecting mirror 92 and the reflecting mirror 91a. The alignment light 105M reflected by the pattern travels backward in the optical path and forms an image once at the position of the field stop 96. After that, the semi-transmissive mirror 9 is passed through the right-angle prism 97 and the magnifying optical system 98M.
It is reflected to the left side in the figure at 9M. The alignment light reflected by the semi-transmissive mirror 99M is magnified and imaged on the image sensor 100M via a lens (not shown). Thus, the image sensor 1
Depending on the image position of the pattern imaged on 00M, the mask 9
It is possible to detect the position information of the pattern on 0 in the XY plane. The alignment operation is the same as that of the first embodiment, and the redundant description will be omitted.

Generally, the resolution of the projection optical system and the alignment detection system is inversely proportional to the numerical aperture of the optical system. For example, looking at the second partial optical system of the first example, since the pupil surface thereof is the concave reflecting surface 30a, the numerical aperture of the second partial optical system is the effective diameter φ of the concave reflecting surface 30a.
It will be proportional to 30d. That is, the resolution of the projection optical system improves as the effective diameter φ30d of the concave reflecting surface 30a increases. Similarly, the resolution of the substrate alignment system
The larger the effective diameter φ30d of the concave reflecting surface 30a, the better.

In each of the above-described embodiments, when the projection optical system is the Dyson type, the concave reflecting surface is reflected, and when the projection optical system is the Offner type, the convex reflecting surface is reflected to expose the alignment light (non-exposure light). ) Is formed on a dichroic film that transmits or a semi-transmissive film that semi-reflects both exposure light and alignment light (non-exposure light). Therefore, the same diameter (φ26d, φ30d, φ74d, φ93) as the projection optical system is used as the alignment detection system.
Since the light flux of d) can be passed through, the maximum resolving power can be obtained as an alignment detection system using a projection optical system, except for the influence of the wavelength difference between the exposure light and the alignment light (non-exposure light). be able to. As a result, the position resolution of the alignment detection system is improved, and highly accurate alignment can be performed.

Further, in each of the above-mentioned embodiments, since the alignment detection system uses a part of the projection optical system, not only the spatial arrangement of the alignment detection system is easy, but also the pattern in the exposure area is used. This is advantageous in terms of accuracy because accurate alignment can be performed. The first and second embodiments described above employ a configuration in which the alignment reflected light beams from the mask and plate are converged by the convex lenses (40, 50, 75) and the concave lenses (41, 51, 76). There is. This is because, in the mask alignment system and the substrate alignment system, the magnification of the optical system from the mask and plate to the image pickup device is preferably about 20 times or more, so that the length of the alignment detection system from the mask and plate to the image pickup device is increased. This is to shorten it.

[0046]

As described above, in the projection exposure apparatus of the present invention, a light beam having the same diameter as the exposure light of the projection optical system can be passed as alignment light. Therefore, it is possible to obtain the maximum resolving power as the alignment detection system using the projection optical system. As a result, the alignment between the mask and the plate substrate can be performed with high accuracy without deteriorating the performance of the projection optical system.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a projection exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of a projection exposure apparatus according to a second embodiment of the present invention.

FIG. 3 is a diagram showing a configuration of a projection exposure apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 21 Illumination optical system 22 Mask 24, 27 Prism 25, 29 Plano-convex lens 26a, 30a Concave reflective surface 28, 31 Prism 32 Plate 33 Stage 34 Reference pattern 35 Monitor optical system 40, 50 Convex lens 41, 51 Concave lens 42, 52 Semi-transmissive mirror 44, 54 Image sensor 45, 55 Alignment light flux

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location G03F 9/00 H

Claims (7)

[Claims] 1. A pattern formed on the mask by exposure light having a predetermined wavelength is projected onto the substrate through the projection optical system while moving the mask and the substrate relative to the projection optical system. In the projection exposure apparatus for exposing, the projection optical system is a Dyson type optical system including a concave reflection surface having a concave surface facing the incident side of the exposure light and a lens component having a convex surface facing the concave reflection surface side. The concave reflection surface of the projection optical system is provided with a thin film having a function of transmitting at least a part of alignment light, and the alignment light is applied to the mask and the substrate through the concave reflection surface of the projection optical system. The position information of the mask and the substrate is detected by irradiating and receiving the reflected light from the mask and the substrate by the alignment light through the concave reflecting surface. A projection exposure apparatus having an alignment detection system for 2. The projection optical system comprises a first Dyson type partial optical system for forming an intermediate image of a pattern formed on the mask, and a second Dyson type partial optical system for re-imaging the intermediate image on the substrate. The projection exposure apparatus according to claim 1, further comprising a Dyson type partial optical system. 3. The alignment detection system irradiates the mask with alignment light via the concave reflecting surface of the first Dyson type partial optical system, and reflects from the mask via the concave reflecting surface. A mask alignment system for receiving light and detecting position information of the mask,
Position information of the substrate is obtained by irradiating the substrate with alignment light through the concave reflecting surface of the second Dyson type partial optical system and receiving reflected light from the substrate through the concave reflecting surface. The projection exposure apparatus according to claim 2, further comprising: a substrate alignment system for detecting. 4. A pattern formed on the mask by exposure light having a predetermined wavelength is projected onto the substrate through the projection optical system while moving the mask and the substrate relative to the projection optical system. In the projection exposure apparatus for exposing, the projection optical system is an Offner type optical system optical system including at least one concave reflecting surface and at least one convex reflecting surface, and the projection optical system is provided on the convex reflecting surface of the projection optical system. Is provided with a thin film having a function of transmitting at least a part of exposure light, irradiating the mask and the substrate with alignment light through the convex reflecting surface of the projection optical system, and the mask with the alignment light. And an alignment detection system for receiving the reflected light from the substrate and detecting positional information of the mask and the substrate. Projection exposure apparatus. 5. The alignment detection system irradiates the mask with alignment light via the convex reflecting surface of the projection optical system, and reflects light from the mask by the alignment light via the convex reflecting surface. An alignment system for a mask for receiving and receiving position information of the mask, and irradiating the substrate with alignment light through the convex reflection surface, and the substrate with the alignment light through the convex reflection surface The projection exposure apparatus according to claim 4, further comprising: a substrate alignment system for receiving reflected light from the substrate and detecting positional information of the substrate. 6. The projection exposure apparatus according to claim 1, wherein the thin film is a dichroic film that transmits the alignment light and reflects the exposure light. 7. The projection exposure apparatus according to claim 1, wherein the thin film is a semi-transmissive film that semi-transparents both the alignment light and the exposure light.