JPH0730715A - Color image sensor and driving method thereof - Google Patents

Abstract

PURPOSE:To reduce crosstalk between signal lines and to remove the deviation of a reading position in a sub scanning direction for the unit of a block with high-speed drive by providing a reading IC and plural gate lines on both sides in the main scanning direction of a photodetector array column. CONSTITUTION:PD arrays 11 are arranged for 2N blocks with (n) pieces of respective RGB photodetectors as one block. On the other hand, the (n) pieces of gate lines G1-Gn are connected to a TFT array 12 for successive transfer for the unit of the block so as to separately control the ON/OFF of 1st-nth TFT inside one block, and a gate matrix 17 is formed. Then, an IC 15 for charge detection is provided with input terminals 1-N and one output terminal, reads charges from the inputs in the order from 1 to N and time sequentially outputs image signals. The output terminal is connected through a circuit for performing dark correction and shading correction to an image processing circuit for matching the positions of RGB.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color image sensor used in an image scanner, a digital color copying machine or the like, and more particularly to a color image sensor with less reading deviation in the sub-scanning direction and a driving method thereof.

[0002]

2. Description of the Related Art There is a conventional image sensor, particularly a contact image sensor, which projects image information of a document or the like on a one-to-one basis and converts it into an electric signal. In this case, the projected image is divided into a large number of pixels (light receiving elements), and the charges generated in each light receiving element are transferred to the thin film transistor switching element (TF).
There is a TFT drive type image sensor which temporarily stores in a capacity between wirings in a specific block unit using T) and sequentially reads out as an electric signal in a time series at a speed of several hundreds KHz to several MHz. This TFT drive type image sensor is
Since the reading can be performed with a single driving IC by the operation of the FT, the number of driving ICs driving the image sensor is reduced.

The structure and operation of a conventional TFT drive type color image sensor will be described with reference to FIG. FIG. 10 is an equivalent circuit diagram of a conventional color image sensor. The conventional color image sensor is shown in FIG.
, N sandwich type light-receiving elements (photodiodes P) provided side by side on an insulating substrate such as glass.
Is defined as one block, and a light-receiving element array (P1,1 to PN, n) having N blocks is formed in the main scanning direction, and this light-receiving element array is arranged in the sub-scanning direction.
Three R, 11G, and 11B are arranged to form a light receiving element array column.

The light receiving element array 11R is provided with a filter that transmits red (R) color light, the light receiving element array 11G is provided with a filter that transmits green (G) color light, and the light receiving element array 11B is blue. (B) A filter for transmitting color light is provided, charge transfer units of thin film transistors (T1,1 to N, n) are connected to each light receiving element, and charge transfer unit arrays 12R, 12G, and 12B are formed. Further, the signal line from the charge transfer unit is connected to the matrix-shaped multilayer wiring 13 ', and the charge detection IC 1 is connected via the n common signal lines 14 corresponding to each light receiving element group in the block.
5, the analog switches (SW1 to SWn) for outputting the image signals in time series in the charge detection IC 15
Is provided.

A bias voltage VB1, VB2, VB3 is applied to one end of each light receiving element from a common electrode for each light receiving element array column, and the charge transfer section is connected to each light receiving element in the first column light receiving element array 11R. Thin film transistor (TF
The wiring drawn from the source electrode of (T) is connected to the source electrodes of the TFTs connected to the light receiving elements in the light receiving element arrays 11G and 11B in the second and third columns, respectively, and the common wiring is used. As a matrix multi-layer wiring 1
3 ', and further connected to the common signal line 14. Further, the gate electrodes of the TFTs are commonly connected in block units, and therefore, the charge transfer array 12R, 12G, 12B.
Corresponding to the gate terminals GR1 to GRN, GG1 to GGN, GB1 to
GBN is provided so that a gate pulse .phi.G can be applied from the gate pulse generating circuit in block units.

Next, a method of driving this conventional color image sensor will be described. When the light receiving element (photodiode P) receives the light reflected on the original document arranged on the upper surface of the light receiving element array 11, the light receiving element (photodiode P) generates an electric charge according to the light and shade of the original, and the parasitic capacitance of the light receiving element and the drain / gate of the TFT. Accumulated in the overlap capacity between. Since each of the light receiving element arrays 11R, 11G, and 11B is provided with a filter that transmits only a wavelength of a specific color (red, green, blue), the light receiving element array 11R reacts with red and generates an electric charge. The light-receiving element array 11G reacts with green to generate electric charges, and the light-receiving element array 11B reacts with blue to generate electric charges.

A gate pulse generating circuit (not shown) applies a gate pulse φG to the TFT in block units.
Is turned on, the photodiode P is connected to the common signal line 13 side, and the charges accumulated in the parasitic capacitance and the like are transferred to and accumulated in the wiring capacitances C1 to Cn of the multilayer wiring 13 'in block units.

Next, a timing generation circuit (not shown)
Are read switches SW1 to SW of the driving IC 15
The read switching signals φS1 to φSn are sequentially applied to n, and the reset switching signals φR1 to φRn are sequentially applied to the reset switching elements RS1 to RSn of the charge detection IC 15 with a delay of one timing. As a result, the charges accumulated in C1 to Cn in the wiring capacitance are output as an image signal. When the reading of the light receiving element array 11R is completed, the reading of the light receiving element array 11G and the light receiving element array 11B is performed in the same manner as above.

The image signals of the light-receiving element arrays 11R, 11G, 11B read by the charge detection IC 15 are converted into image data by an A / D converter, stored in a memory (not shown) outside the sensor, and received. The distance between the element arrays is calculated to synthesize the image data (Japanese Patent Application Laid-Open No. Hei.
276957).

[0010]

However, in the above-described conventional color image sensor and its driving method, after reading one line image of a color in the main scanning direction, one line of another color is read next. Since it is
The relative movement of the document in the sub-scanning direction causes a shift in the corresponding positional relationship of RGB, which causes a problem of color shift when the RGB colors are combined.

Further, in the above conventional color image sensor, since the signal line is drawn out in one direction of the light receiving element array row and connected to a single driving IC, there is no room in the layout of the signal line. There has been a problem that signal lines intersect with each other in a multilayer wiring portion to cause crosstalk.

Further, in the above-mentioned conventional color image sensor, since a plurality of light receiving element arrays are read by a single driving IC, there is a problem that the processing speed for outputting an image signal becomes slow.

Further, in the above-mentioned conventional color image sensor and its driving method, since the image information of each pixel is read in block units in the main scanning direction while moving the document or color image sensor in the sub scanning direction, each block is read. There is a problem in that the timing of charge transfer is different, and the corresponding reading position of the original in the sub-scanning direction shifts in units of blocks while accumulating charges, resulting in an image with a read shift.

The present invention has been made in view of the above circumstances, and eliminates color misregistration, gives a margin to the layout of signal lines, reduces crosstalk between signal lines, and drives at high speed.
It is another object of the present invention to provide a color image sensor and a driving method thereof in which a reading position shift in the sub-scanning direction for each block is eliminated.

[0015]

According to a first aspect of the present invention for solving the above-mentioned problems of the conventional example, the light receiving elements of a plurality of pixels are set as one block, and the plurality of blocks are arranged in an array in the main scanning direction. A plurality of light receiving element arrays in which a plurality of light receiving element arrays are arranged side by side in the sub-scanning direction, a switching element array in which switching elements respectively connected to the light receiving elements are arranged in an array corresponding to each of the light receiving element arrays, and the switching A plurality of gate lines for transmitting a control signal for controlling on / off of the element, a reading IC for reading an image signal output from the switching element, and a wiring section for connecting the switching element and the reading IC. In the color image sensor having, there are as many input terminals of the reading IC as the number of blocks, and an output line from the switching element is the The output lines that are commonly connected to each lock unit are input to the input terminal of the reading IC, the plurality of gate lines are separately connected to each switching element in the block, and the plurality of gate lines are further connected. The gate lines are connected in the same order for each block.

According to a second aspect of the present invention for solving the above-mentioned problems of the conventional example, in the method for driving a color image sensor according to the first aspect, switching in each block has a corresponding positional relationship between the blocks. Control signals are sequentially transmitted to the elements from a plurality of gate lines, and the image signals output from the switching elements in each block are read by a reading IC having input terminals for the number of blocks at the timing of the control signal transmission. It is characterized by that.

According to a third aspect of the present invention for solving the problems of the conventional example, in the color image sensor according to the first aspect, a reading IC and a plurality of reading ICs are provided on both sides of the light-receiving element array row in the main scanning direction. A gate line is provided, and the reading IC is provided.
The output line connected to the input terminal of is connected to the switching element corresponding to the light receiving element of the light receiving element array on the side closer to the reading IC in the light receiving element array column.

According to a fourth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the color image sensor according to the third aspect, 1 to n light receiving elements are set as one block, and (1) in the main scanning direction. ~ N) A reading IC having a light-receiving element array row in which three light-receiving element arrays in which 2 blocks are arranged in the sub-scanning direction for three-color reading, and having 1 to N input terminals
3 on both sides of the light receiving element array row in the main scanning direction.
The output lines from the switching elements connected to the light-receiving element arrays located at the ends of the light-receiving element array columns are arranged as a common output line for each block, and are arranged on one side in the main scanning direction. The output line from the switching element connected to two of the reading ICs and connected to the light receiving element array located at the center of the light receiving element array row is (1
˜n) × 2N, the odd-numbered output lines are used as common output lines for each block, are drawn out in one direction with respect to the main scanning direction, and the rest of the three reading ICs on the one direction side are left. 1
Connected to each other, the even-numbered output lines are used as common output lines for each block, and are drawn out in the other direction with respect to the main scanning direction and connected to the remaining one of the three reading ICs on the other direction side. ,
Further, 1 to n gate lines and switching elements of the switching element array are connected in the order of 1 to n for each block of 1 to N, and in the order of n to 1 for each block of N + 1 to 2N blocks. It is characterized by being connected.

According to a fifth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the color image sensor according to the fourth aspect, a switching element connected to the light receiving element array located at the central portion of the light receiving element array column. Odd-numbered output lines are commonly connected to each block, and the commonly-connected odd-numbered output lines are 1 to N blocks and N + 1 to
2N blocks are sequentially connected and connected to input terminals 1 to N of the reading ICs on one side to input terminals, and an even number from switching elements connected to the light receiving element array located in the central portion of the light receiving element array column. Th output line is commonly connected to each block, and the evenly connected even numbered output lines are sequentially connected to correspond to 1 to N blocks and N + 1 to 2N blocks to connect the reading ICs on the other direction side. 1 to N are input to input terminals, and 1 to n switching lines connected to the one-n side gate lines and the odd-numbered output lines are connected to each other.
For N blocks, only odd-numbered blocks are connected in the order of 1 to n for each block, and for N + 1 to 2N blocks, only odd-numbered blocks are connected in the order of n to 1; For 1 to N blocks of n gate lines and switching elements to which even-numbered output lines are connected, only even-numbered blocks are connected in the order of 1 to n for each block, and N + 1
With respect to the ~ 2N blocks, only even-numbered blocks are connected in the order of n ~ 1 for each block.

According to a sixth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the method for driving a color image sensor according to the fifth aspect, the light receiving element array positioned at the end of the light receiving element array row receives light. The elements are read in parallel by two reading ICs connected to the light receiving element array, and (1 to
n) × 2N of the light receiving elements, the one-side reading IC in which the odd-numbered light-receiving elements are connected to the odd-numbered light-receiving elements
Then, the even-numbered light receiving elements are read by the reading IC on the other direction side to which the even-numbered light receiving elements are connected.

According to a seventh aspect of the present invention for solving the problems of the conventional example, in the color image sensor according to the first aspect, all charges generated in the light receiving element are provided between the light receiving element and the switching element. It is characterized in that a switching element for batch transfer for simultaneously transferring pixels at the same time and a temporary storage capacitor for temporarily storing the charges collectively transferred from the switching element for batch transfer are provided.

According to an eighth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the method for driving a color image sensor according to the seventh aspect, a switching element for batch transfer is turned on at the same time for all pixels to receive light. The charges generated in the above are collectively transferred to a temporary storage capacitor, and the charges stored in the temporary storage capacitor are sequentially transmitted from a plurality of gate lines to a switching element in a corresponding positional relationship between blocks in each block. The image signals output from the switching elements in each block are read by a reading IC having input terminals for the number of blocks at the control signal transmission timing.

According to a ninth aspect of the present invention for solving the problems of the conventional example, in the color image sensor according to the seventh aspect, a reading IC and a plurality of reading ICs are provided on both sides of the light-receiving element array row in the main scanning direction. A gate line is provided, and the reading IC is provided.
The output line connected to the input terminal of is connected to the switching element corresponding to the light receiving element of the light receiving element array on the side closer to the reading IC in the light receiving element array column.

According to a tenth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the color image sensor according to the ninth aspect, 1 to n light receiving elements are set as one block,
Reading I having a light-receiving element array in which (1 to N) × 2 blocks are arranged in the main scanning direction and three rows are arranged in the sub-scanning direction for reading three colors
Three Cs are arranged on both sides of the light receiving element array row in the main scanning direction, and the output lines from the switching elements connected to the light receiving element arrays located at the ends of the light receiving element array row are common to each block. Output line of the switching element connected to two of the three reading ICs arranged on one side in the main scanning direction and connected to the light receiving element array located at the center of the light receiving element array row. The output line is (1
˜n) × 2N, the odd-numbered output lines are used as common output lines for each block, are drawn out in one direction with respect to the main scanning direction, and the rest of the three reading ICs on the one direction side are left. 1
Connected to each other, the even-numbered output lines are used as common output lines for each block, and are drawn out in the other direction with respect to the main scanning direction and connected to the remaining one of the three reading ICs on the other direction side. ,
Further, 1 to n gate lines and switching elements of the switching element array are connected in the order of 1 to n for each block of 1 to N, and in the order of n to 1 for each block of N + 1 to 2N blocks. It is characterized by being connected.

According to an eleventh aspect of the present invention for solving the above-mentioned problems of the conventional example, in the color image sensor according to the tenth aspect, a switching element connected to the light receiving element array located at the central portion of the light receiving element array row. Odd-numbered output lines are connected in common for each block, and the odd-numbered output lines commonly connected are connected to 1 to N blocks and N +.
From the switching elements connected to the 1 to 2N blocks in order, inputting the input terminals to the 1 to N of the reading IC on one side, and connecting to the light receiving element array located in the central portion of the light receiving element array row. Of the even-numbered output lines are commonly connected for each block, and the commonly connected even-numbered output lines are connected in correspondence with the 1 to N blocks and the N + 1 to 2N blocks in order to read in the other direction. 1 to N of ICs are input to input terminals, and 1 to n gate lines on the one direction side and switching elements connected to odd-numbered output lines are connected to 1 to n blocks for 1 to N blocks. 1 to n gate lines and even-numbered output lines on the other direction side are connected in the order of n to 1 for N + 1 to 2N blocks. Switch to connect A grayed element for 1~N block connects even numbered in the order of 1~n for each block, N
The +1 to 2N blocks are characterized in that only even-numbered blocks are connected in the order of n to 1 for each block.

According to a twelfth aspect of the present invention for solving the above-mentioned problems of the conventional example, in the method for driving a color image sensor according to the eleventh aspect, the light-receiving element array positioned at the end of the light-receiving element array row receives light. The elements are read in parallel by two reading ICs connected to the light receiving element array, and (1
To n) × 2N light-receiving elements, one-side reading I in which odd-numbered light-receiving elements are connected to the odd-numbered light-receiving elements
In C, the even-numbered light receiving elements are read by the reading IC on the other direction side to which the even-numbered light receiving elements are connected.

[0027]

According to the first aspect of the present invention, a plurality of blocks of light receiving elements of a plurality of pixels are arrayed in the main scanning direction to form a plurality of rows of light receiving element arrays in the sub scanning direction to form a light receiving element array row. In the color image sensor, the switching elements connected to the light receiving elements are arranged in an array corresponding to the light receiving element array, and the output lines from the switching elements are commonly connected in block units to read ICs.
A color image sensor in which a plurality of gate lines that transmit control signals for turning on / off switching elements are connected to each switching element in the block separately, and a plurality of gate lines are connected in the same order for each block. According to the second aspect of the invention, as a driving method of the color image sensor according to the first aspect, a switching element having a corresponding positional relationship between blocks is sequentially turned on in each block to read an image signal. Therefore, even when the document is relatively moved in the sub-scanning direction, the image signal of the pixel corresponding to the sub-scanning direction in the light receiving element array row can be read by turning on the switching element with a common control signal. Therefore, it is possible to prevent the color shift when the colors of the respective pixels are combined without shifting the positional relationship of the corresponding pixels.

According to the inventions of claims 3 to 6, in the color image sensor of claim 1, the reading IC and the plurality of gate lines are arranged in both directions with respect to the main scanning direction of the light receiving element array row. Since the color image sensor in which the reading IC and the output line commonly connected to the reading IC are connected and the driving method thereof, the output lines drawn out in both directions have a layout margin, and three rows of light receiving lines for reading three colors are used. Except for the light receiving element array at the center of the element array row, the output lines connected to the reading ICs do not intersect with each other, crosstalk can be reduced, and reading can be performed by a plurality of reading ICs, so that high speed driving can be performed. .

According to the seventh and eighth aspects of the present invention, in the color image sensor according to the first aspect, a batch transfer switching element and a temporary storage capacitor are provided between the light receiving element and the switching element, and the batch transfer is performed. The switching elements for all pixels are turned on simultaneously to transfer the charges generated in the light receiving element to the temporary storage capacitor all at once, and the charges stored in the temporary storage capacitor are switched within each block in a corresponding positional relationship between blocks. Since the color image sensor that sequentially turns on the elements to read the image signal and the driving method thereof are used, when the document is relatively moved in the sub-scanning direction,
Pixels read by each light receiving element array have no reading position shift in the sub-scanning direction, and therefore color shift when combining the respective colors can be prevented.

According to the inventions of claims 9 to 12, in the color image sensor of claim 7, the reading IC and the plurality of gate lines are arranged in both directions with respect to the main scanning direction of the light receiving element array row, Since the color image sensor in which the reading IC and the output line commonly connected to the reading IC are connected and the driving method thereof, the output lines drawn out in both directions have a layout margin, and three rows of light receiving lines for reading three colors are used. Each reading IC except the light receiving element array in the center of the element array row
Since the output lines connected to each other do not intersect with each other, crosstalk can be reduced, and high-speed driving can be performed because reading is performed by a plurality of reading ICs.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. The overall configuration of the color image sensor according to the embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram of a color image sensor of this embodiment. As shown in FIG. 1, the color image sensor of this embodiment has three rows of light receiving element arrays 11R, 11G, 1 provided with filters for reading colors of red (R) green (G) blue (B).
A light receiving element array row (PD array) 11 composed of 1B,
Additional capacitance arrays (CADD arrays) 16 and 16 'for accumulating the charges generated in the PD array 11, and a sequential charge transfer array (sequential transfer TFT for sequentially transferring the accumulated charges).
Array) 12, a charge detection IC 15 for reading the transferred charges, a wiring portion 13 for a signal line connecting the sequential transfer TFT array 12 and the charge detection IC 15, and an ON / OFF state for the sequential transfer TFT array 12. And a gate matrix 17 for transmitting the pulse of.

In this embodiment, the PD array 11
Are arranged in 2N blocks, each of which has n RGB light receiving elements as one block, and a bias voltage VB is applied to the PD array 11. Further, in the sequential transfer TFT array 12, n gate lines G1 to Gn are connected in a block unit to control ON / OFF of 1st to nth TFTs in one block separately, and a gate matrix 17 is formed. is doing.

Further, in the embodiment of FIG. 1, the PD array 11
CADD arrays 16 and 1 on both sides in the vertical direction in the figure
6 ', the sequential transfer TFT array 12, the gate matrices 17a and 17b, the wiring portion 13, and the charge detection I
C15 is arranged. The charge detecting ICs 15 provided in the upper direction of the drawing are the charge detecting ICs 15B-1 connected to the blue (B) reading light receiving elements of 1 to N blocks from the right and the odd numbered ICs of 1 to 2N blocks. Charge detection IC 15 connected to the light receiving element for green (G) reading
G-1 and the charge detection IC 15B-2 connected to the N + 1 to 2N block blue (B) reading light receiving elements are arranged, and the charge detection IC 15 provided in the lower direction of the drawing is
From the right, the charge detection IC 15R-1 connected to the red (R) reading light receiving element of 1 to N blocks and the charge detection IC connected to the even numbered green (G) reading light receiving element of 1 to 2N blocks IC15G-2 and charge detection IC15 connected to the red (R) reading light receiving element of N + 1 to 2N blocks
R-2 and are located.

Next, the color image sensor of this embodiment will be described with reference to FIGS. FIG. 2 is an explanatory plan view showing a part of the light receiving element, the charge transfer section and the wiring section.
FIG. 6 is an explanatory diagram illustrating a connection relationship between a wiring portion and a gate matrix according to the present embodiment. Note that FIG. 2 is a diagram showing an outline of each unit in one block.

As shown in FIG. 2, the PD array 11 has R
RG provided with filters for transmitting light of three colors of GB
The sandwich type light receiving elements (photodiodes P) P-R, P-G, and P-B for B are arranged in an array in three rows at intervals of, for example, 1 to 4 pixel pitches in the sub-scanning direction. In this case, n light receiving elements are set as one block and 2N blocks are arranged. The PD array 11 in FIG.
In the figure, a blue (B) light receiving element array 11B is arranged in the upper direction of the drawing centering on a green (G) light receiving element array 11G, and a red (R) light receiving element array 11R is arranged in the lower direction of the drawing. The signal line from the light receiving element array 11B is in the upward direction, and the signal line from the light receiving element array 11R is in the downward direction.
The signal lines from the light receiving element array 11G are alternately drawn out so that the odd-numbered ones are upward and the even-numbered ones are downward.

In the CADD arrays 16 and 16 ', the insulating layer is sandwiched between metal layers such as chrome or aluminum to form a capacitor portion, one metal layer is grounded, and the other metal layer is connected to a signal line. It is a composition. Then, the light receiving element array 11
An additional capacitance CADD-B for accumulating charges generated in the light receiving element P-B is formed in an array shape in the upward direction of B, and is provided between the odd-numbered additional capacitance CADD-B and the even-numbered additional capacitance CADD-B. An additional capacitance CADD-G connected to the odd-numbered light receiving elements P-G is provided. Further, an additional capacitance CADD-R for accumulating charges generated in the light receiving element P-R in the lower direction of the light receiving element array 11R.
Are formed in an array, and an additional capacitance CADD-G connected to the even-numbered light receiving element P-G is provided between the odd-numbered additional capacitance CADD-R and the even-numbered additional capacitance CADD-R.

In the sequential transfer TFT array 12, a sequential transfer TFT array 12B for transferring the charge of the additional capacitance CADD-B is arranged in an array form outside the CADD array 16 on the upper side of the drawing, and an odd numbered additional array is further outside. Sequential transfer TFT array 12G for transferring the charge of the capacitor CADD-G (charge generated in the odd-numbered light receiving element P-G) is arranged in an array,
Also, an additional capacitance C is provided outside the CADD array 16 'on the lower side of the figure.
Sequential transfer TFT array 12R for transferring charges of ADD-R
Are arrayed in an array, and a sequential transfer TFT array 12G 'for transferring the charge of the even-numbered additional capacitance CADD-G (the charge generated in the even-numbered light receiving element P-G) is further arrayed in the array. ing. A signal line is led out from the source electrode of each sequential transfer TFT to the wiring portion 13 and connected to the charge detection IC 15.

The gate matrix 17 is a TF for sequential transfer.
Two gate matrices 17a and 17b are formed outside the T arrays 12G and 12G ', and 1 to n of sequential transfer TFTs connected to the light receiving elements P-B and P-R in 1 to N blocks are formed.
In order to turn on in the second order, the common gate lines 1 to n in the main scanning direction are sequentially drawn out in block units in the sub scanning direction and are sequentially connected to the gate electrodes of the transfer TFTs.
Further, in order to turn on the sequential transfer TFTs connected to the light receiving elements P-B and P-R in the N + 1 to 2N blocks in the order of the n to 1 order, they are sequentially drawn from the common gate line in block units in the sub-scanning direction. Sequentially connected to the gate electrode of the transfer TFT.

However, since the sequential transfer TFTs connected to the light receiving element P-G are separately arranged in the vertical direction in the figure,
For N blocks, the gate matrices 17a, 17
1 to n or 1'from both of the gate lines of b
The gate lines of n'and the light receiving elements P-G of 1 to n are connected so as to correspond to each other, and for N + 1 to 2N blocks, the gate lines of 1 to n or 1 'to n'and n to 1 are connected. The light receiving elements P-G are connected in such a manner that their order is corresponding. In this manner, the charge detection IC 15 is different in the connection order of the gate lines between the 1-N block and the N + 1-2N block.
This is to prevent signals from being redundantly read in the signal reading in G-1. The 1 to n gate lines are connected to a gate pulse generating circuit (not shown) so that the gate pulses .phi.G1 to .phi.Gn are sequentially applied in the order of 1 to n.

Next, the connection relationship between the signal lines in the wiring section 13 and the connection relationship between the gate lines in the gate matrix 17 will be described more specifically with reference to FIG. Here, the number of pixels n in one block is usually the number of inputs to the gate pulse generation circuit at the timing of serially turning on / off the transfer TFTs, and the number of blocks N is one for charge detection. The number of inputs of the IC 15 is N. For example, if the number of pixels n in one block is 40 and the number of blocks N is 64, 2560 pixels can be realized in one line, but if the target is 5000 pixels, which is the number of pixels equivalent to 400 SPI in A3 size, Twice as many pixels are required. Since increasing the number of pixels n in a block slows down the processing speed,
In order to maintain the speed, the number of blocks N is doubled so that there are two charge detection ICs 15 per color.

The connection relationship of the signal lines in the wiring portion 13 will be described. The sequential transfer TFT array 12
The signal lines extracted from the source electrodes of the B and 12R TFTs are commonly connected in block units for 1 to N blocks, and the signal lines 1 to N of the charge detection ICs 15B-1 and 15R-1.
Of the charge detection ICs 15B-2 and 15R-2, and the N + 1 to 2N blocks are commonly connected in block units.

Further, the T of the TFT array 12G for sequential transfer is
The signal line led out from the source electrode of the FT has the TFT connected only to the odd-numbered light receiving element P-G.
Only the signal line drawn from the source electrode of the odd-numbered TFT is connected, and this signal line is commonly connected in block units for 1 to N blocks and the charge detection IC 15 is connected.
Connected to the 1 to N input terminals of G-1, and similarly N + 1 to 2
The N blocks are also commonly connected in block units and connected to the input terminals 1 to N of the charge detection IC 15G-1.

That is, N signal lines and N + extracted from the blocks 1 to N of the sequential transfer TFT array 12G.
The N signal lines extracted from the 1 to 2N blocks are sequentially connected in correspondence to form N signal lines, which are input to the 1 to N input terminals of the charge detection IC 15G-1.
For example, the signal line extracted from the first block is N
Connected to the signal line extracted from the + 1st block and connected to the first input terminal of the charge detection IC 15G-1,
The signal line extracted from the second block is connected to the signal line extracted from the N + 2nd block, connected to the second input terminal of the charge detection IC 15G-1, and further extracted from the Nth block. The signal line is connected to the signal line extracted from the 2Nth block, and the charge detection IC is connected.
It is connected to the Nth input terminal of 15G-1.

The signal line extracted from the source electrode of the TFT of the sequential transfer TFT array 12G 'is a TFT.
Is connected only to the even-numbered light receiving elements P-G, there is only a signal line drawn from the source electrode of the even-numbered TFT, and this signal line is commonly used for each block for 1 to N blocks. Connected to charge detection IC
It is connected to the 1-N input terminals of 15G-2, and similarly N + 1
The ~ 2N blocks are also commonly connected in block units and connected to the input terminals 1 to N of the charge detection IC 15G-2.

That is, the sequential transfer TFT array 12G '
N signal lines drawn from the blocks 1 to N and N
The N signal lines extracted from the +1 to 2N blocks are sequentially connected to form N signal lines, which are input to the 1 to N input terminals of the charge detection IC 15G-2.
For example, the signal line extracted from the first block is N
Connected to the signal line extracted from the + 1st block and connected to the first input terminal of the charge detection IC 15G-2,
The signal line extracted from the second block is connected to the signal line extracted from the N + 2nd block, connected to the second input terminal of the charge detection IC 15G-2, and further extracted from the Nth block. The signal line is connected to the signal line extracted from the 2Nth block, and the charge detection IC is connected.
It is connected to the Nth input terminal of 15G-2.

Next, the connection relationship of the gate lines of the gate matrix 17 will be described.
Is a gate line G outside the sequential transfer TFT array 12G.
1 to Gn are arranged in parallel and connected to the gate electrodes of the TFTs in each block, and the gate lines G1 'to Gn' are provided outside the sequential transfer TFT array 12G '.
Are arranged in parallel and are connected to the gate electrodes of the TFTs in each block.

More specifically, regarding the connection relationship of the gate lines to the gate electrodes of the TFTs in the blocks 1 to N of the sequential transfer TFT array 12B, the gate line G1 is 1 for each block.
Th TFT (TF connected to the first light receiving element P-B
T) and the gate line G2 is the second T
The gate line Gn is connected to the gate electrode of the FT and further connected in the forward direction to the gate electrode of the nth TFT. In addition, N + 1 of the sequential transfer TFT array 12B
The connection of the gate line to the gate electrode of the TFT in the ~ 2N block is as follows.
The gate line Gn-1 is connected to the gate electrode of the FT, the gate line Gn-1 is connected to the gate electrode of the second TFT, and the gate line G1 is connected to the gate electrode of the nth TFT in the opposite direction.

Regarding the connection relationship of the gate lines to the gate electrodes of the TFTs in the blocks 1 to N of the sequential transfer TFT array 12R, the gate line G1 'is the first TFT (1
The gate line G2 'is connected to the gate electrode of the second TFT, which is connected to the second light receiving element P-R, and the gate line G2' is connected to the gate electrode of the second TFT.
It is connected to the gate electrode of the second TFT. Further, regarding the connection relationship of the gate line to the gate electrode of the TFT in the N + 1 to 2N blocks of the sequential transfer TFT array 12R, the gate line Gn ′ is connected to the gate electrode of the first TFT in each block, and the gate line is connected to the gate electrode of the first TFT. Gn-1 'is connected to the gate electrode of the second TFT, and the gate line G1' is connected in the opposite direction and connected to the gate electrode of the nth TFT.

Regarding the connection relationship of the gate lines to the gate electrodes of the TFTs in the blocks 1 to N of the sequential transfer TFT array 12G, odd-numbered TFs are included in the sequential transfer TFT array 12G.
Since there is only T (TFT connected to the odd-numbered light receiving element P-G), the gate line G1 is the first TFT for each block.
Connected to the gate electrode of and the gate line G3 is the third TFT
, And the gate line Gn-1 is connected to the gate electrode of the n-1th TFT in association with the forward direction. In addition, N + 1 of the sequential transfer TFT array 12G
As for the connection relationship of the gate lines to the gate electrodes of the TFTs in the 2N block, since there are only odd-numbered TFTs as described above, the gate line Gn is connected to the gate electrode of the first TFT in each block, Gn-2 is connected to the gate electrode of the third TFT, and further, in the opposite direction, the gate line G2 is connected to the gate electrode of the n-1th TFT. The reason why even-numbered gate lines are used for N + 1 to 2N blocks is to avoid duplication because odd-numbered gate lines are used in 1 to N blocks.

Then, the sequential transfer TFT array 12G '
The connection relationship of the gate lines to the gate electrodes of the TFTs in the 1 to N blocks is that even-numbered TFTs (T connected to the even-numbered light receiving elements P-G) are included in the sequential transfer TFT array 12G '.
Since there is only FT), the gate line G2 'is 2 for each block.
Connected to the gate electrode of the second TFT, and the gate line G4 'is 4
The gate line Gn ′ is connected to the gate electrode of the n-th TFT and is further associated with the gate electrode of the n-th TFT in the forward direction. In addition, the sequential transfer TFT array 12
The connection relation of the gate line to the gate electrode of the TFT in the N + 1 to 2N blocks of G ′ is the same as the above even-numbered TFT.
For each block, the gate line Gn-1 'is connected to the gate electrode of the second TFT, the gate line Gn-3' is connected to the gate electrode of the fourth TFT, and they are associated in the opposite direction. The gate line G1 'is connected to the gate electrode of the nth TFT. Again, 1 to N blocks and N + 1 to 2
Avoid duplication of gate lines used in N blocks.

Further, among the wirings 1 to n or 1'to n'leaded out in the sub scanning direction from the gate lines in the main scanning direction,
When there is a wiring that can be commonly connected to the gate electrodes of the B and G or the R and G sequential transfer TFTs, the wiring is common in the gate matrix 17 of this embodiment. As a result, the number of gate lines in the sub scanning direction can be reduced, and the length of the sensor in the main scanning direction can be shortened. From the idea of minimizing the number of gate lines in the sub-scanning direction and the idea of avoiding redundant reading of 1 to N blocks and N + 1 to 2N blocks in the charge detection IC 15G, the gate matrix 17 of this embodiment is used. The connection state of the gate line to the sequential transfer TFT is 1 to N block and N + 1 to 2N
The block is symmetrical with respect to the boundary line between the N block and the N + 1 block.

The charge detecting IC 15 has input terminals 1 to N and one output terminal, reads the charges transferred to the signal line connected to the input terminal in the order of 1 to N, and sequentially reads them. An image signal is output from the output terminal. The output terminal is connected to a correction circuit (not shown) that performs dark correction and shading correction, and is further connected to an image processing circuit (not shown) that performs RGB position adjustment.

Next, a driving method of the color image sensor of this embodiment having the wiring structure of the wiring portion 13 and the gate matrix 17 will be described with reference to FIGS. 3 and 4. FIG. 4 is an explanatory diagram for explaining the output state of the image signal from the charge detection IC 15. In the color image sensor of this embodiment, gate pulses are applied to the gate lines G1 to Gn and G1 'to Gn' of the gate matrices 17a and 17b in this order from the gate pulse generating circuit to gate pulses .phi.G1 to .phi.Gn and .phi.G1 'to .phi.Gn'. To be done. Then, the RGB-corresponding image signals are read by the charge detection ICs 15B, 15R, and 15G at the timing of applying the gate pulse.

More specifically, the charge detection IC 15
The image signals of the first light receiving element P-B of the 1 to N blocks are input to the 1 to N input terminals of B-1 at one time by the gate pulse .phi.G1 output to the gate line G1. By sequentially turning on the analog switches SW1 to SWn, the input terminals 1 to N are read in order and output in time series. Next, the gate pulse φG2 output to the gate line G2
The image signals of the second light receiving element P-B of the 1st to Nth blocks are input at a time by the analog switch SW1 to SWn.
By sequentially turning on, reading in the order of input terminals 1-N,
Output in time series. Further, similarly, the image signal of the n-th light receiving element P-B of 1 to N blocks is input at once by the gate pulse φGn output to the gate line Gn, and the analog switches SW1 to SWn are sequentially turned on to input terminals. The data is read in the order of 1 to N and output in time series. Therefore, when the image signal output from the charge detection IC 15B-1 is represented by (block number, pixel number in block), FIG.
As shown in (a), ((1,1) (2,1) ... (N, 1)), ((1,2)
(2,2) ... (N, 2)), ..., ((1, n) (2, n) ... (N, n)).

The charge detecting IC 15R-1 has input terminals 1 to N of the first light receiving element P-R of 1 to N blocks at a time by the gate pulse .phi.G1 'output to the gate line G1'. Image signals are input, and these image signals are read in order of the input terminals 1 to N by sequentially turning on the analog switches SW1 to SWn and output in time series. Next, by the gate pulse φG2 ′ output to the gate line G2 ′, the image signals of the second light receiving element P−R of the 1st to Nth blocks are input at one time, and the analog switches SW1 to SWn are sequentially turned on to input. The terminals 1 to N are read in this order and output in time series. Similarly, by the gate pulse φGn ′ output to the gate line Gn ′, the image signals of the n-th light receiving element P−R of 1 to N blocks are input at a time, and the analog switch S
By sequentially turning on W1 to SWn, the input terminals 1 to N are read in order and output in time series. Therefore, I for charge detection
The image signal output from C15R-1 is the same as that shown in FIG. 4A as shown in FIG.

The input terminals 1 to N of the charge detection IC 15B-2 are supplied to the nth light receiving element P of N + 1 to 2N blocks at a time by the gate pulse .phi.G1 output to the gate line G1.
-B image signals are input, and these image signals are input terminal 1 by sequentially turning on the analog switches SW1 to SWn.
Read in the order of ~ N and output in time series. Next, the gate pulse φG2 output to the gate line G2 causes N + at a time.
The image signal of the (n-1) th light receiving element P-B of the 1 to 2N block is input, and the analog switches SW1 to SWn are sequentially turned on to read in the order of the input terminals 1 to N and output in time series. Similarly, the image signal of the first light receiving element P-B of the N + 1 to 2N blocks is input at once by the gate pulse φGn output to the gate line Gn, and the analog switches SW1 to SWn are sequentially turned on to input terminals. The data is read in the order of 1 to N and output in time series. Therefore, the image signal output from the charge detection IC 15B-2 is as shown in FIG.
As shown in (b), ((N + 1, n) (N + 2, n) ... (N, n)), ((N
+ 1, n-1) (N + 2, n-1)… (2N, n-1)),…, ((N + 1,1) (N + 2,1)
… (2N, 1)).

The charge detection IC 15R-2 has input terminals 1 to N of the nth light receiving element P-R of N + 1 to 2N blocks at a time by the gate pulse φG1 'output to the gate line G1'. Image signals are input, and these image signals are read in order of the input terminals 1 to N by sequentially turning on the analog switches SW1 to SWn and output in time series. Next, the image signal of the (n-1) th light receiving element P-R of N + 1 to 2N blocks is input at once by the gate pulse .phi.G2 'output to the gate line G2', and the analog switches SW1 to SW1.
By sequentially turning on SWn, the input terminals 1 to N are read in order and output in time series. Further, similarly, the gate line Gn '
To the gate pulse φGn ′ output to
The image signal of the first light receiving element P-R of the 2N block is input, and the analog switches SW1 to SWn are sequentially turned on to read in the order of the input terminals 1 to N and output in time series. Therefore, the image signal output from the charge detection IC 15R-2 is the same as that shown in FIG. 4B as shown in FIG.

Next, to the input terminals 1 to N of the charge detection IC 15G-1, the first light receiving element P of 1 to N blocks at a time is supplied by the gate pulse φG1 output to the gate line G1.
-G image signals are input, and these image signals are input terminal 1 by sequentially turning on analog switches SW1 to SWn.
Read in the order of ~ N and output in time series. Next, the gate pulse φG2 output to the gate line G2 causes N + at a time.
The image signals of the (n-1) th light receiving element P-G of the 1 to 2N blocks are input, and the analog switches SW1 to SWn are sequentially turned on to read the input terminals 1 to N in order and output them in time series. Next, by the gate pulse φG3 output to the gate line G3, the image signals of the third light receiving element P-G of the 1st to Nth blocks are input at a time, and the analog switches SW1 to
By sequentially turning on SWn, the input terminals 1 to N are read in order and output in time series. Further, similarly, the gate line Gn
N + 1 to 2 at a time by the gate pulse φGn output to
The image signal of the first light receiving element P-G of the N block is input, and the analog switches SW1 to SWn are sequentially turned on to read in the order of the input terminals 1 to N and output in time series. Therefore, as shown in FIG. 4C, the image signal output from the charge detection IC 15G-1 is ((1,1) (2,1) ...
(N, 1)), ((N + 1, n-1) (N + 2, n-1)… (2N, n-1)),…, ((N
+1,1) (N + 2,1)… (2N, 1)).

The charge detecting IC 15G-2 has input terminals 1 to N of the nth light receiving element P-G of N + 1 to 2N blocks at a time by the gate pulse φG1 'output to the gate line G1'. Image signals are input, and these image signals are read in order of the input terminals 1 to N by sequentially turning on the analog switches SW1 to SWn and output in time series. Next, the image signal of the second light receiving element P-G of the 1st to Nth blocks is input at one time by the gate pulse φG2 'output to the gate line G2', and the analog switches SW1 to SWn are sequentially turned on to input. The terminals 1 to N are read in this order and output in time series. Next, by the gate pulse φG3 ′ output to the gate line G3 ′, n−1 to 2N blocks of n−2 at a time.
The image signal of the th light receiving element P-G is input, and the analog switches SW1 to SWn are sequentially turned on to input 1
Read in the order of ~ N and output in time series. Similarly, by the gate pulse φGn ′ output to the gate line Gn ′, the image signals of the n-th light receiving element P-G of the 1st to Nth blocks are input at a time, and the analog switches SW1 to SWn are sequentially turned on. The input terminals 1 to N are read in this order and output in time series. Therefore, as shown in FIG. 4D, the image signal output from the charge detection IC 15G-2 is ((N + 1,
n) (N + 2, n)… (2N, n)), ((1,2) (2,2)… (N, 2)),…,
The order is ((1, n) (2, n) ... (N, n)).

The image signals read by the charge detection ICs 15R, 15G, and 15B are corrected by dark correction and shading correction circuits, and the signal output order and RGB signals are corrected.
Signal (data) processing is performed by an image processing circuit or the like that performs the position alignment.

According to the color image sensor and the driving method thereof of this embodiment, the output lines from the source electrodes of the TFTs in the block are commonly used for each block to have N signal lines, and the gate electrodes of the TFTs in the block are used. Gate lines to each block, and the connection relationship of n gate lines in each block is made the same for N blocks, and gate pulses are sequentially applied to the n gate lines to generate a corresponding image signal for each block. Since the charge detection IC 15 is used for reading and this reading operation is performed for each of the RGB colors, when the color image sensor or the document of this embodiment is moved in the sub-scanning direction, the corresponding positional relationship of RGB shifts. It is possible to prevent the occurrence of color misregistration when the three RGB colors are combined.

Further, according to the color image sensor of this embodiment, the output line from the source electrode of the TFT in the block is made common to each block and the signal line is led out in both directions of the PD array 11 to the charge detection IC 15. Since the wiring portion 13 to be connected is configured, there is a margin in the layout of the signal lines, and since the signal lines of the RB do not intersect with each other, crosstalk that occurs at the intersections of the signal lines is prevented. There is an effect that can be done.

Further, in the color image sensor of this embodiment, the image signals of the odd-numbered light receiving elements in the light receiving element array 11G of 1 to 2N blocks are detected by the charge detecting IC 15.
Read with G-1, 1 to 2N blocks of light receiving element array 1
Since the image signal of the even-numbered light receiving element in 1G is read by the charge detection IC 15G-2, the use efficiency of the charge detection IC 15 can be improved.

Further, since pixels for reading N blocks of each color are read by one charge detection IC 15, all pixels can be read by one charge detection IC as in the conventional color image sensor shown in FIG. In comparison, there is an effect that the color image sensor can be driven at high speed.

Next, a color image sensor of another embodiment will be described with reference to FIGS. FIG. 5 is a schematic view of a color image sensor of another embodiment, and FIG.
It is a plane explanatory view of a part of photo acceptance unit of a color image sensor of another example, a charge transfer part, and a wiring part. As shown in FIG. 5, a color image sensor according to another embodiment has RGB color sensors.
P consisting of light receiving element arrays 11R, 11G, 11B for
A D array 11, an additional capacitance array (CADD array) 16 for accumulating charges generated in the PD array 11 in the vertical direction around the PD array 11, and a thin-film transistor (collective transfer for collectively accumulating charges in the CADD array 16 (Transfer TFT) and a reset TFT for resetting the electric charge remaining in the CADD array 16 are arranged in an array, and a collective charge transfer section array (collective transfer TFT array) 18 and a collective transfer TFT array 18 are used for transfer. A temporary storage capacitor array (CT array) 19 for temporarily storing the accumulated electric charge,
A sequential charge transfer array (sequential transfer TFT array) 12 that sequentially transfers the charges accumulated in the CT array 19, a charge detection IC 15 that reads the charges transferred by the operation of the sequential transfer TFT array 12, and a sequential transfer The TFT array 12 and the charge detection IC 15 are connected to each other by a wiring portion 13 of a signal line, and a gate matrix 17 for sequentially applying a gate pulse to the transfer TFT array 12.

Therefore, the color image sensor of the embodiment of FIG. 5 is the CADD of the color image sensor of the embodiment of FIG.
A batch transfer TFT array 18 and a CT array 19 are provided between the array 16 and the sequential transfer TFT array 12.

More specifically, the color image sensor of the above another embodiment will be described with reference to FIG. The color image sensor shown in FIG. 6 is based on the configuration of the color image sensor shown in FIG. 2 and is additionally provided with a batch transfer TFT array 18 and a CT array 19. Therefore, the overlapping transfer TFT array 18 and the CT array 19 which are the characteristic parts of the embodiment of FIG.

The batch transfer TFT array 18 is a batch transfer T for collectively transferring the charges accumulated in the CADD array 16.
The FT and the reset TFT for resetting the charges remaining in the CADD array 16 are set as one set, and this set is arranged in an array. The gate electrode of the batch transfer TFT is supplied with a gate pulse φGT for transferring charges, and the gate electrode of the reset TFT is supplied with a gate pulse φGR for resetting. The gate pulses φGT and φGR are simultaneously applied to all the batch transfer TFTs or all the reset TFTs. Therefore, the charges accumulated in the CADD array 16 are simultaneously transferred to the CT array 19 for all the pixels, and the CADD array is also used. 1
The charges remaining in 6 are reset simultaneously for all pixels. Further, the CT array 19 is a capacitance part having a structure in which an insulating layer is sandwiched between metal layers, like the CADD array 16.
One metal layer is grounded and the other metal layer is connected to the signal line.

A batch transfer TFT array 18 will be described with reference to FIG.
Specifically, the arrangement state of the CT array 19 and the CT array 19 will be described. In the batch transfer TFT array 18, the batch transfer TFT array 18B that collectively transfers the charges generated in the blue (B) light receiving element P-B is as follows. The batch transfer TFT array 18R, which is arranged in the upper direction of the CADD array 16 and collectively transfers the charges generated in the red (R) light receiving element P-R, is
The batch transfer TFT array 18G, which is arranged in the lower direction of the array 16 'and collectively transfers the charges generated in the odd-numbered light receiving elements P-R of the green (G) light receiving elements P-G, is collectively transferred. The collective transfer TFT array 18G 'arranged in the upper direction of the general TFT array 18B and collectively transferring the charges generated in the even-numbered light receiving elements P-R is arranged in the lower direction of the collective transfer TFT array 18R. ing.

Further, the temporary storage capacity (CTB) for all blue (B) pixels and the temporary storage capacity (CTG) for odd-numbered green (G) pixels form a CT array 19, and all red (R). The temporary storage capacity (CTR) corresponding to pixels and the temporary storage capacity (CTG) corresponding to even-numbered green (G) pixels form a CT array 19 '. In addition, odd-numbered and even-numbered C corresponding to B pixels
An odd number C GTG corresponding to the G pixel is provided between TB, and an even number G G is provided between the odd number CTR corresponding to the R pixel and the even number CTR.
A CTG corresponding to pixels is provided. This configuration is also CADD
It is similar to the array 16.

Next, the operation of detecting the electric charge for one pixel in the color image sensor of the another embodiment will be described with reference to FIG. FIG. 7 is an equivalent circuit diagram of one pixel of the color image sensor of another embodiment. As shown in FIG. 7, an equivalent circuit for one pixel of a color image sensor of another embodiment is a batch transfer for collectively transferring charges with a photodiode P which is a light receiving element, its parasitic capacitance CP and additional capacitance CADD. TFT (TT), reset TFT (TR) for resetting residual charge, temporary storage capacitor CT for temporarily storing the charge transferred by TT, and sequential transfer for sequentially transferring the charge of temporary storage capacitor CT Transfer TFT (T
M), a wiring capacitance CL for accumulating charges sequentially transferred by TM, a potential detection amplifier (AMP) provided in the charge detection IC 15 and a reset MOS transistor (MOS) for resetting the wiring capacitance CL. It consists of and.

The photocharges generated in the light receiving element are the parasitic capacitance CP, the additional capacitance CADD, the drain and the drain of TT and TR for a certain period of time.
After being accumulated in the overlap capacitances CGD (TT) and CGD (TR) between the gates, TT is turned on by a gate pulse φGT as a charge transfer switch, and is transferred and accumulated in the temporary storage capacitor CT. Next, after TT is turned off, the gate pulse φGR is transmitted, TR is turned on, and the parasitic capacitance C
The untransferred charges remaining in P, the additional capacitance CADD, and the overlap capacitances CGD (TT) and CGD (TR) are reset. After resetting, the gate pulse .phi.GM is applied to TM to turn on TM, and the charges accumulated in the temporary accumulation capacitance CT are transferred to the wiring capacitance CL.

Then, after the potential of the signal line is changed by the charge accumulated in the wiring capacitance CL and the TM is turned off, this voltage value is amplified by the amplifier in the charge detection IC 15 and output. After the voltage is detected, the wiring capacitance CL is reset by the MOS transistor, and the potential after the reset is detected as the reference voltage.

The reading operation in the color image sensor shown in FIGS. 5, 6 and 7 is compared with the reading operation in the color image sensor shown in FIGS.
In the color image sensor of FIG. 5 etc., all the batch transfer TFTs are simultaneously turned on by the gate pulse φGT to transfer and store the charges generated in each light receiving element P and stored in the additional capacitance CADD, etc., to the temporary storage capacitance CT. Then, thereafter, similar to the reading method of the color image sensor of FIG. 1 and the like, corresponding pixels in each block are sequentially read and output in the output order of the image signals shown in FIG.

The image signals output in parallel from the charge detection ICs 15 are dark-corrected and shading-corrected, A / D-converted, and stored in the image memory of each color. The image signals of the three colors are converted in a normal order and output from the image memory in consideration of a time shift corresponding to the pitch of the light receiving element array.

According to the color image sensor and the driving method thereof of the above-mentioned another embodiment, the charge accumulated in the additional capacitance CADD generated in the light receiving element P is temporarily stored in all the pixels at once by the batch transfer TFT. Transfer to IC1 for charge detection
Since the image signal is read by detecting the electric charge at 5, the pixels read by each light receiving element array 11 are read at the reading position in the sub-scanning direction when the sensor or the document moves in the sub-scanning direction. Since there is no deviation, it is easy to match the reading position of each color, and there is an effect that pixel deviation (color deviation) of the corresponding color can be prevented. In addition, the layout margin, the reduction of crosstalk, the high speed driving, and the like described in the effects of the color image sensor and the driving method thereof according to the present embodiment are also obtained.

A color image sensor according to still another embodiment will be described with reference to FIG. FIG. 8 is an explanatory view of the connection relationship between the wiring part and the gate matrix of another embodiment, which is an application example of FIG. The color image sensor shown in FIG. 8 has a T for sequential transfer centered on the light receiving element array 11.
The FT array 12G and the sequential transfer TFT array 12G 'are formed line-symmetrically. That is, in the color image sensor shown in FIG. 8, even-numbered gate lines among the 1-n gate lines in the 1-N blocks are sequentially connected to the gate electrodes of the transfer TFT array 12G, and In the N + 1 to 2N blocks, odd-numbered gate lines among the gate lines 1 to n are sequentially connected to the gate electrodes of the transfer TFT array 12G in the opposite direction.

Similar to FIG. 8, the color image sensor shown in FIG. 6 is arranged such that the TFT arrangement of the sequential transfer TFT array 12G and the connection relationship of the gate lines with respect to the light receiving element array 11 are the same as those of the sequential transfer TFT array 12G '. On the other hand, the color image sensor shown in FIG. 9 is formed line-symmetrically.

According to the color image sensor of the embodiment shown in FIGS. 8 and 9, the layouts of the sequential transfer TFT array 12G and the sequential transfer TFT array 12G 'are line-symmetric with respect to the light receiving element array 11. The symmetrical TFTs are turned on / off at the same timing. Therefore, in the reading operation, the light receiving element array 11
Line symmetrical with respect to the center, that is, the light receiving element array 1
The effect of gate on / off in the upper and lower parts of 1 becomes equal, and there is an effect that the image signal can be read accurately. Further, the effects described in the present embodiment shown in FIGS. 1 to 7 and the other embodiments are also possessed by the color image sensor of the embodiments shown in FIGS.

[0080]

According to the first aspect of the invention, a plurality of light receiving element arrays, each of which has a plurality of blocks of light receiving elements arranged in the main scanning direction, are arranged side by side in the sub scanning direction. Is a color image sensor in which the switching elements connected to the light receiving elements are arranged in an array corresponding to the light receiving element array, and the output lines from the switching elements are commonly connected in block units and input to the reading IC. The color image sensor has multiple gate lines that transmit control signals to turn the switching elements on and off, connected separately to each switching element in the block, and multiple gate lines connected to each block in the same order. According to the invention described in claim 2, the switching elements in the corresponding positional relationship between the blocks are sequentially turned on in each block. Since the method of driving the color image sensor according to claim 1 for reading an image signal is performed, even when the document is relatively moved in the sub-scanning direction, the image signal of the pixel corresponding to the sub-scanning direction in the light receiving element array row is Since the reading can be performed by turning on the switching element with a common control signal, there is an effect that the color shift when the colors of the respective pixels are combined can be prevented without shifting the positional relationship of the corresponding pixels.

According to the inventions of claims 3 to 6, in the color image sensor of claim 1, the reading IC and the plurality of gate lines are arranged in both directions with respect to the main scanning direction of the light receiving element array row, Since the color image sensor in which the reading IC and the output line commonly connected to the reading IC are connected and the driving method thereof, the output lines drawn out in both directions have a layout margin, and three rows of light receiving lines for reading three colors are used. Except for the light receiving element array at the center of the element array row, the output lines connected to the reading ICs do not intersect with each other, crosstalk can be reduced, and reading can be performed by a plurality of reading ICs, so that high speed driving can be performed. effective.

According to the seventh and eighth aspects of the invention, in the color image sensor according to the first aspect, a switching element for batch transfer and a temporary storage capacitor are provided between the light receiving element and the switching element, and the batch transfer is performed. The switching elements for all pixels are turned on simultaneously to transfer the charges generated in the light receiving element to the temporary storage capacitor all at once, and the charges stored in the temporary storage capacitor are switched within each block in a corresponding positional relationship between blocks. Since the color image sensor that sequentially turns on the elements to read the image signal and the driving method thereof are used, when the document is relatively moved in the sub-scanning direction,
Pixels read by each light receiving element array have no reading position shift in the sub-scanning direction, and therefore, there is an effect that color shift when each color is combined can be prevented.

According to the inventions of claims 9 to 12, in the color image sensor of claim 7, the reading IC and the plurality of gate lines are arranged in both directions with respect to the main scanning direction of the light receiving element array row, Since the color image sensor in which the reading IC and the output line commonly connected to the reading IC are connected and the driving method thereof, the output lines drawn out in both directions have a layout margin, and three rows of light receiving lines for reading three colors are used. Each reading IC except the light receiving element array in the center of the element array row
Since the output lines connected to each other do not intersect with each other, there is an effect that crosstalk can be reduced, and high-speed driving can be performed because reading is performed by a plurality of reading ICs.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a color image sensor according to an embodiment of the present invention.

FIG. 2 is a plan view illustrating a part of a light receiving element, a charge transfer portion, and a wiring portion of the color image sensor of this embodiment.

FIG. 3 is an explanatory diagram of a connection relationship between a wiring portion and a gate matrix according to the present embodiment.

FIG. 4 is an explanatory diagram illustrating an output state of an image signal according to the present exemplary embodiment.

FIG. 5 is a schematic view of a color image sensor of another embodiment.

FIG. 6 is an explanatory plan view of a part of a light receiving element, a charge transfer section, and a wiring section of a color image sensor of another embodiment.

FIG. 7 is an equivalent circuit diagram of one pixel of a color image sensor of another embodiment.

FIG. 8 is an explanatory diagram of a connection relationship between a wiring portion and a gate matrix according to another embodiment.

FIG. 9 is a plan view of a part of a light receiving element, a charge transfer section, and a wiring section of a color image sensor of another embodiment.

FIG. 10 is an equivalent circuit diagram of a conventional color image sensor.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 ... Light receiving element array, 12 ... Sequential transfer TFT array, 13 ... Wiring part, 14 ... Common signal line, 15 ... Charge detection IC, 16 ... Additional capacity array, 17 ... Gate matrix, 18 ... Batch transfer TFT array , 19
… Temporary storage capacity array, P… Light receiving element, CADD… Additional capacity, TT… Batch transfer TFT, TR… Reset T
FT, TM ... Sequential transfer TFT, Cp ... Parasitic capacitance,
CT ... Temporary storage capacity, CL ... Wiring capacity, AMP ...
Potential detection amplifier, MOS ... MOS transistor

Claims (12)

[Claims] 1. A light receiving element of a plurality of pixels is set as one block,
A light-receiving element array array in which a plurality of light-receiving element arrays in which a plurality of blocks are arranged in an array in the main scanning direction are arranged in parallel in the sub-scanning direction, and switching elements respectively connected to the light-receiving elements are associated with the respective light-receiving element arrays. A switching element array arranged in an array, a plurality of gate lines for transmitting a control signal for controlling ON / OFF of the switching element, a reading IC for reading an image signal output from the switching element, and the switching element In a color image sensor having a wiring section for connecting the reading IC and the reading IC, there are as many input terminals of the reading IC as the number of blocks, and output lines from the switching elements are commonly connected in units of the blocks. Is connected to the input terminal of the reading IC, and the plurality of gate lines are connected to the block. Color image sensor, characterized in that connected separately to each switching element of the inner, further wherein the plurality of gate lines are connected in the same order for each of the blocks. 2. A control signal is sequentially transmitted from a plurality of gate lines to a switching element having a corresponding positional relationship between blocks in each block, and the switching element in each block is transmitted at the timing of the control signal transmission. 2. The method for driving a color image sensor according to claim 1, wherein the image signal output from the image sensor is read by a reading IC having input terminals for the number of blocks. 3. A reading IC and a plurality of gate lines are provided on both sides of the light receiving element array row in the main scanning direction, and the reading I
The color image according to claim 1, wherein an output line connected to an input terminal of C is connected to a switching element corresponding to a light receiving element of the light receiving element array on the side closer to the reading IC in the light receiving element array column. Sensor. 4. A block of 1 to n light receiving elements,
Reading I having a light-receiving element array in which (1 to N) × 2 blocks are arranged in the main scanning direction and three rows are arranged in the sub-scanning direction for reading three colors
Three Cs are arranged on both sides of the light receiving element array row in the main scanning direction, and the output lines from the switching elements connected to the light receiving element arrays located at the ends of the light receiving element array row are common to each block. Output line of the switching element connected to two of the three reading ICs arranged on one side in the main scanning direction and connected to the light receiving element array located at the center of the light receiving element array row. The output line is (1
˜n) × 2N, the odd-numbered output lines are used as common output lines for each block, are drawn out in one direction with respect to the main scanning direction, and the rest of the three reading ICs on the one direction side are left. 1
Connected to each other, the even-numbered output lines are used as common output lines for each block, and are drawn out in the other direction with respect to the main scanning direction and connected to the remaining one of the three reading ICs on the other direction side. ,
Further, 1 to n gate lines and switching elements of the switching element array are connected in the order of 1 to n for each block of 1 to N, and in the order of n to 1 for each block of N + 1 to 2N blocks. The color image sensor according to claim 3, wherein the color image sensor is connected. 5. An odd-numbered output line from a switching element connected to a light-receiving element array located in a central portion of a light-receiving element array column is commonly connected in each block, and the odd-numbered output line is commonly connected. 1 to N blocks and N + 1
.About.2N blocks are sequentially connected in association with each other to input 1 to N of the reading IC on one side to the input terminal, and from the switching element connected to the light receiving element array located in the central portion of the light receiving element array row. The even-numbered output lines are commonly connected for each block, and the commonly-connected even-numbered output lines are connected to correspond to the 1 to N blocks and the N + 1 to 2N blocks in order, and the reading IC on the other direction side is connected. 1 to N of the switching elements connected to the one-n side gate lines and the odd-numbered output lines are connected to the input terminals of 1 to N of Only the odd-numbered ones are connected in order, and for the N + 1 to 2N blocks, only the odd-numbered ones are connected in the order of n to 1 for each block, and the 1-n gate lines and the even-numbered output lines on the other direction side are connected. Switchon to connect And an element connecting the even numbered in the order of 1~n for each block for 1~N block, N +
5. The color image sensor according to claim 4, wherein for the 1 to 2N blocks, only even-numbered blocks are connected in the order of n to 1 for each block. 6. A light receiving element of a light receiving element array located at an end portion of the light receiving element array row is read in parallel by two reading ICs connected to the light receiving element array, and the light receiving element is positioned at a central portion of the light receiving element array row. (1 to n) × 2N of light receiving element array
Among the light receiving elements, the reading IC on one side where the odd numbered light receiving elements are connected to the odd numbered light receiving elements, and the other direction side where the even numbered light receiving elements are connected to the even numbered light receiving elements The method for driving a color image sensor according to claim 5, wherein the reading is performed by a reading IC. 7. A switching element for batch transfer, in which charges generated in the light receiving element are simultaneously transferred to all pixels between the light receiving element and the switching element, and a batch transfer is performed from the switching element for batch transfer. The color image sensor according to claim 1, further comprising a temporary storage capacitor that temporarily stores charges. 8. A batch transfer switching element is turned on at the same time for all pixels to collectively transfer charges generated in a light receiving element to a temporary storage capacitor, and the charge stored in the temporary storage capacitor is transferred between blocks within each block. The control signals are sequentially transmitted from the plurality of gate lines to the switching elements having the corresponding positional relationship, and the image signals output from the switching elements in each block are input terminals corresponding to the number of blocks at the timing of the control signal transmission. The method for driving a color image sensor according to claim 7, wherein the reading is performed by a reading IC included therein. 9. A reading IC and a plurality of gate lines are provided on both sides of the light receiving element array row in the main scanning direction, and the reading I
8. The color image according to claim 7, wherein the output line connected to the input terminal of C is connected to a switching element corresponding to the light receiving element of the light receiving element array on the side closer to the reading IC in the light receiving element array column. Sensor. 10. A light receiving element array in which 1 to n light receiving elements are set as one block and (1 to N) × 2 blocks are arranged in the main scanning direction, and three rows are arranged in the sub scanning direction for reading three colors. Three read ICs each having an element array row and having 1 to N input terminals are arranged on both sides of the light-receiving element array row in the main scanning direction, and light-receiving elements located at the ends of the light-receiving element array row are arranged. The output line from the switching element connected to the element array is used as a common output line for each block, and is connected to two of the three reading ICs arranged on one side in the main scanning direction, and the light receiving element array column is connected. Among the output lines from the switching elements connected to the light receiving element array located in the central portion of (1) to (2), there are (1 to n) × 2N output lines, and odd-numbered output lines are used as common output lines for each block. To pull in one direction Connected to the remaining one of the three reading ICs on the side, the even-numbered output lines are used as common output lines for each block, and are drawn out in the other direction with respect to the main scanning direction so as to be connected to the other side. Connected to the remaining one of the reading ICs, and further connecting 1 to n gate lines and switching elements of the switching element array in the order of 1 to n for each 1 to N block, and N + 1 to 10. The color image sensor according to claim 9, wherein the 2N blocks are connected in the order of n to 1 for each block. 11. An odd-numbered output line from a switching element connected to a light-receiving element array located in the center of a light-receiving element array column is commonly connected in each block, and the odd-numbered output line is commonly connected. 1 to N blocks and N +
From the switching elements connected to the 1 to 2N blocks in order, inputting the input terminals to the 1 to N of the reading IC on one side, and connecting to the light receiving element array located in the central portion of the light receiving element array row. Of the even-numbered output lines are commonly connected for each block, and the commonly connected even-numbered output lines are connected in correspondence with the 1 to N blocks and the N + 1 to 2N blocks in order to read in the other direction. 1 to N of ICs are input to input terminals, and 1 to n gate lines on the one direction side and switching elements connected to odd-numbered output lines are connected to 1 to n blocks for 1 to N blocks. 1 to n gate lines and even-numbered output lines on the other direction side are connected in the order of n to 1 for N + 1 to 2N blocks. Switch to connect A grayed element for 1~N block connects even numbered in the order of 1~n for each block, N
11. For +1 to 2N blocks, only even-numbered blocks are connected in the order of n to 1 for each block.
The described color image sensor. 12. A light receiving element of a light receiving element array located at an end portion of the light receiving element array row is read in parallel by two reading ICs connected to the light receiving element array, and the light receiving element is positioned at a central portion of the light receiving element array row. (1 to n) x 2 of light receiving element array
Among N light receiving elements, a reading IC on one side in which odd numbered light receiving elements are connected to the odd numbered light receiving elements, and an other direction side in which even numbered light receiving elements are connected to the even numbered light receiving elements 12. The reading IC is used for reading.
A method for driving the described color image sensor.