JPH07278879A - Plating method and device therefor - Google Patents

Plating method and device therefor

Info

Publication number
JPH07278879A
JPH07278879A JP2202795A JP2202795A JPH07278879A JP H07278879 A JPH07278879 A JP H07278879A JP 2202795 A JP2202795 A JP 2202795A JP 2202795 A JP2202795 A JP 2202795A JP H07278879 A JPH07278879 A JP H07278879A
Authority
JP
Japan
Prior art keywords
plating
current
dispersant
current density
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2202795A
Other languages
Japanese (ja)
Inventor
Yasuyuki Murase
安行 村瀬
Masaaki Isobe
正章 磯部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Motor Co Ltd
Original Assignee
Yamaha Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Motor Co Ltd filed Critical Yamaha Motor Co Ltd
Priority to JP2202795A priority Critical patent/JPH07278879A/en
Publication of JPH07278879A publication Critical patent/JPH07278879A/en
Pending legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)

Abstract

PURPOSE:To form plating layers which are changed in eutectic density of a dispersant in the thickness direction of plating layers with one kind of a plating bath contg. the dispersant. CONSTITUTION:The plating liquid is supplied from a tank 15 in which the plating bath contg. the dispersant is stored to a treatment device main body 2. While this plating liquid is fluidized between a work 1 and electrodes 7, an electric current is passed therebetween, by which plating is executed. The flow velocity of the plating liquid between the work 1 and the electrodes 7 is made adjustable by an automatic valve 17 of a plating liquid supply pipe 22 and an automatic valve 20 of a bypass pipe 23. On the other hand, the density of the current to be supplied to the electrodes 7 is made regulatable by a rectifier 26. These valves are controlled by a controller 25. The flow velocity of the plating liquid between the work 1 and the electrodes 7 and the density of the current to be supplied to the electrodes 7 are fluctuated at prescribed time intervals.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、分散剤を含有しためっ
き液を、ワークの被めっき面と電極の間で流動させつつ
電流を供給してめっきを施す方法及びその装置であっ
て、特に、めっき層の厚み方向に分散剤の共析密度を変
化させためっき層を形成するめっき方法及びのその装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for plating by supplying an electric current while flowing a plating solution containing a dispersant between a surface to be plated of a work and an electrode. The present invention relates to a plating method and its apparatus for forming a plating layer in which the eutectoid density of a dispersant is changed in the thickness direction of the plating layer.

【0002】[0002]

【従来の技術】従来、潤滑性や摩擦係数等において優れ
た特性が得られるめっきの一種として、分散剤を共析さ
せた、いわゆる複合めっきが知られており、例えば、エ
ンジンのシリンダブロックのシリンダ内周面に対するめ
っきとして有効利用されている。
2. Description of the Related Art Conventionally, so-called composite plating, in which a dispersant is co-deposited, is known as a type of plating that provides excellent properties such as lubricity and friction coefficient. For example, a cylinder of a cylinder block of an engine is known. It is effectively used as a plating on the inner peripheral surface.

【0003】このように複合めっきを施す場合、単一層
の複合めっきによるだけでは、例えば上記潤滑性等の要
求を満足する程度に分散剤を共析させるとワークとの密
着性が低下する等、めっきに要求される各種要求を充分
に満足することができない場合がある。このため、めっ
き層における分散剤の共析密度をめっき層の厚み方向に
変化させる技術が開発されている。例えば、ワーク表面
に分散剤を共析させない単一めっき層を形成しておき、
その表面に分散剤を共析させた複合めっき層を形成する
ようにし、これによりワークに対する複合めっきの密着
強度を間接的に向上させるというように、分散剤の共析
密度が異なる複数層のめっきを施す多層めっきの技術が
開発されている。
In the case of performing the composite plating as described above, if the dispersant is co-deposited to such an extent that the requirements such as the above-mentioned lubricity and the like are satisfied only by the single-layer composite plating, the adhesion to the work is deteriorated. In some cases, it may not be possible to sufficiently satisfy various requirements for plating. Therefore, a technique for changing the eutectoid density of the dispersant in the plating layer in the thickness direction of the plating layer has been developed. For example, a single plating layer that does not eutectize the dispersant is formed on the work surface,
By forming a composite plating layer with a co-deposited dispersant on its surface, and indirectly improving the adhesion strength of the composite plating to the work, plating of multiple layers with different co-deposition densities of the dispersant is performed. A technique of multi-layer plating for applying is developed.

【0004】[0004]

【発明が解決しようとする課題】上記多層めっきを行う
場合には、被めっき面と電極との間に複数種類のめっき
液、例えば分散剤を含有しないめっき液と、分散剤を含
有しためっき液とを介在させる必要がある。そこで、現
実には、先ず、分散剤を含有しないめっき浴の浴槽でワ
ーク表面に単一めっき層を形成した後、分散剤を含有し
ためっき浴の浴槽にワークを移動し、ここで上記のよう
に既に形成されている単一めっき層の表面に複合めっき
層を形成するようにしている。しかし、このようにワー
クを複数の浴槽間で移動させながらめっきを施すのでは
作業効率の面、設備の面、あるいはコストの面で不利で
ある。
When performing the above-mentioned multilayer plating, a plurality of types of plating solutions, for example, a plating solution containing no dispersant and a plating solution containing a dispersant are provided between the surface to be plated and the electrode. And need to intervene. Therefore, in reality, first, after forming a single plating layer on the surface of the work in the bath of the plating bath containing no dispersant, the work is moved to the bath of the plating bath containing the dispersant. The composite plating layer is formed on the surface of the single plating layer that has already been formed. However, performing plating while moving the work between a plurality of baths in this way is disadvantageous in terms of work efficiency, equipment, and cost.

【0005】ところで、ワークに対してめっきを施す方
法としては、めっき浴槽にワークを浸漬させる方法が一
般的であるが、最近、処理能率を高める高速めっき方法
として、ワークの被めっき面と電極との間でめっき液を
流動させつつワーク及び電極に通電し、これによりめっ
き速度を高めるようにした技術が開発されている。しか
し、この高速めっき方法による場合でも、多層めっきを
行うときには、複数種類のめっき浴槽とそれぞれに対応
するめっき処理が設けられるため、作業効率、設備等が
充分に改善されない。
By the way, as a method for plating a work, a method of immersing the work in a plating bath is generally used, but recently, as a high-speed plating method for enhancing the processing efficiency, a work surface to be plated and an electrode are treated. A technique has been developed in which a plating solution is made to flow between them to energize a work and an electrode, thereby increasing a plating rate. However, even in the case of this high-speed plating method, when performing multi-layer plating, a plurality of types of plating baths and corresponding plating treatments are provided, so that work efficiency, equipment, etc. are not sufficiently improved.

【0006】本発明は、上記の事情に鑑み、分散剤を含
有した一種類のめっき浴で、分散剤の共析密度がめっき
層の厚み方向に変化するめっき層を形成することができ
るめっき方法及びその装置を提供することを目的とす
る。
In view of the above circumstances, the present invention is a plating method capable of forming a plating layer in which the eutectoid density of the dispersant changes in the thickness direction of the plating layer with one type of plating bath containing the dispersant. And its device.

【0007】[0007]

【課題を解決するための手段】本発明のめっき方法は、
分散剤を含有しためっき浴のめっき液を、ワークの被め
っき面と電極の間で流動させつつ電流を通電してめっき
を施す方法において、上記めっき液の流動速度及び上記
供給電流の電流密度をめっき処理中の時間経過に応じて
変動させ、上記ワークの被めっき面に形成されるめっき
層の分散剤の共析密度を、めっき層の厚み方向に変化さ
せるものである(請求項1)。なお、「めっき処理中の
時間経過に応じて変動させ」とは、連続的な場合と断続
的な場合の双方を含む意味である。
The plating method of the present invention comprises:
In a method of performing plating by applying a current while flowing a plating solution of a plating bath containing a dispersant between a surface to be plated of a work and an electrode, the flow rate of the plating solution and the current density of the supplied current are The eutectoid density of the dispersant in the plating layer formed on the surface to be plated of the work is changed in the thickness direction of the plating layer by varying it with the passage of time during the plating process (claim 1). It should be noted that “changing according to the passage of time during the plating treatment” is meant to include both continuous cases and intermittent cases.

【0008】また、上記請求項1記載のめっき方法にお
いて、上記めっき液を高速度で流動させつつ高電流密度
の電流を通電した後、めっき液の流動速度及び供給電流
の電流密度を漸減させるようにしたものである(請求項
2)。
Further, in the plating method according to the first aspect of the present invention, after flowing a current having a high current density while flowing the plating solution at a high speed, the flow rate of the plating solution and the current density of the supply current are gradually reduced. (Claim 2).

【0009】さらに、上記請求項1記載のめっき方法に
おいて、上記めっき液の流動速度及び上記供給電流の電
流密度を所定の時間間隔で変動させ、上記めっき層とし
て、分散剤の共析密度が異なる複数のめっき層を積層形
成するようにしたものである(請求項3)。
Further, in the plating method according to claim 1, the flow rate of the plating solution and the current density of the supply current are varied at predetermined time intervals so that the plating layer has a different eutectoid density of a dispersant. A plurality of plating layers are laminated and formed (claim 3).

【0010】また、上記請求項3記載のめっき方法にお
いて、上記めっき液を高速度で流動させつつ高電流密度
の電流を通電した後、上記めっき液を低速度で流動させ
つつ低電流密度の電流を通電するようにしたものである
(請求項4)。
In addition, in the plating method according to the third aspect of the present invention, after flowing a current having a high current density while flowing the plating solution at a high speed, a current having a low current density is caused while flowing the plating solution at a low speed. Is energized (Claim 4).

【0011】さらに、上記請求項1乃至4記載のめっき
方法において、上記めっき浴としてニッケル浴を用い、
上記分散剤としてシリコンカーバイドを用いたものであ
る(請求項5)。
Further, in the plating method according to any one of claims 1 to 4, a nickel bath is used as the plating bath,
Silicon carbide is used as the dispersant (claim 5).

【0012】本発明のめっき装置は、分散剤を含有した
めっき浴のめっき液を、ワークの被めっき面と電極の間
で流動させつつ電流を通電してめっきを施す装置におい
て、ワークの被めっき面と電極の間のめっき液の流動速
度を調整する流速調整手段と、上記通電電流の電流密度
を調整する電流密度調整手段と、めっき処理中の時間経
過を計測する計時手段と、上記時間経過に応じてめっき
液の上記流動速度及び通電電流の上記電流密度を変動さ
せるように上記流速調整手段及び電流密度調整手段を制
御する制御手段とを備えたものである(請求項6)。
The plating apparatus of the present invention is an apparatus for performing plating by applying a current while flowing a plating solution of a plating bath containing a dispersant between a surface to be plated of a work and an electrode. Flow velocity adjusting means for adjusting the flow velocity of the plating solution between the surface and the electrode, current density adjusting means for adjusting the current density of the energizing current, time measuring means for measuring the passage of time during the plating process, and passage of the above time. And a control means for controlling the flow velocity adjusting means and the current density adjusting means so as to change the flow rate of the plating solution and the current density of the applied current in accordance with the above (claim 6).

【0013】[0013]

【作用】本発明によれば、めっき液の流動速度及び供給
電流の電流密度を変動させることにより、分散剤が含有
された一種類のめっき浴から、流動速度及び電流密度に
応じて、めっき層の厚み方向に分散剤の共析密度が変化
するめっき層が形成される。つまり、流動速度及び電流
密度が高くなるほど分散剤が共析されにくくなる傾向が
あることから、めっき液中の分散剤の量が一定であって
も、上記流動速度及び電流密度が変動されることによ
り、めっき中の分散剤の共析量が変わることとなる。
According to the present invention, by changing the flow rate of the plating solution and the current density of the supplied current, the plating layer can be formed from one type of plating bath containing a dispersant according to the flow rate and the current density. A plating layer in which the eutectoid density of the dispersant changes in the thickness direction of is formed. That is, since the dispersant tends to be less likely to be co-deposited as the flow rate and the current density increase, the flow rate and the current density vary even if the amount of the dispersant in the plating solution is constant. As a result, the eutectoid amount of the dispersant during plating changes.

【0014】この際、先ず、めっき液を高速度で流動さ
せつつ高電流密度の電流を通電した後、めっき液の流動
速度及び供給電流の電流密度を漸減させるようにすれ
ば、単一層の複合めっきにおいて、ワークの被めっき面
側に分散剤がほとんど共析されない部分が形成されると
ともに、表面側に向かって分散剤の共析密度が高くなる
ようなめっき層が形成される(請求項2)。
At this time, first, a current having a high current density is applied while the plating solution is flowing at a high speed, and then the flow rate of the plating solution and the current density of the supplied current are gradually reduced. In plating, a part where the dispersant is hardly codeposited is formed on the surface of the workpiece to be plated, and a plating layer is formed so that the co-deposition density of the dispersant increases toward the surface side. ).

【0015】また、めっき液の流動速度及び上記供給電
流の電流密度を所定の時間間隔で変動させるようにすれ
ば、ワークの被めっき面に、分散剤の共析密度が異なる
複数のめっき層が積層形成される(請求項3)。
If the flow rate of the plating solution and the current density of the supply current are varied at predetermined time intervals, a plurality of plating layers having different eutectoid densities of the dispersant are formed on the surface to be plated of the work. It is formed by stacking (claim 3).

【0016】この際、先ず、めっき液を高速度で流動さ
せつつ高電流密度の電流を通電した後、めっき液を低速
度で流動させながら低電流密度の電流を通電するように
すれば、ワークの被めっき面に、先ず、分散剤がほとん
ど共析されないめっき層が形成され、その表面に分散剤
が共析されためっき層が形成される(請求項4)。
At this time, first, a current having a high current density is passed while flowing the plating solution at a high speed, and then a current having a low current density is passed while flowing the plating solution at a low speed. First, a plating layer on which the dispersant is hardly codeposited is formed on the surface to be plated, and a plating layer on which the dispersant is codeposited is formed on the surface (claim 4).

【0017】さらに、上記めっき浴としてニッケル浴を
用い、上記分散剤としてシリコンカーバイドを用いれ
ば、めっき液を高速度で流動させつつ高電流密度の電流
を通電する時間帯では、シリコンカーバイドがほとんど
共析されないニッケルめっき層が得られ、めっき液を低
速度で流動させつつ低電流密度の電流を通電する時間帯
では、シリコンカーバイドが充分に共析したNi-SiC複合
めっき層が得られる(請求項5)。
Further, if a nickel bath is used as the plating bath and silicon carbide is used as the dispersant, the silicon carbide is almost the same in the time zone when the plating solution is made to flow at a high speed and a high current density current is passed. A nickel plating layer that is not deposited is obtained, and in the time zone in which a current of low current density is applied while the plating solution is flowing at a low speed, a Ni-SiC composite plating layer in which silicon carbide is sufficiently co-deposited is obtained (claim 5).

【0018】また、請求項6記載の発明によれば、制御
手段により、所定の時間に基づいて、めっき液の流動速
度と通電電流の電流密度が調整され、これにより分散剤
が含有された一種類のめっき浴から、流動速度及び電流
密度に応じて、厚み方向に分散剤の共析密度が変化する
ようなめっき層が形成される。
Further, according to the invention of claim 6, the flow velocity of the plating solution and the current density of the energizing current are adjusted by the control means based on a predetermined time, whereby the dispersant is contained. A plating layer in which the eutectoid density of the dispersant changes in the thickness direction is formed from various types of plating baths in accordance with the flow velocity and the current density.

【0019】[0019]

【実施例】本発明の実施例を図面を用いて説明する。Embodiments of the present invention will be described with reference to the drawings.

【0020】先ず、本発明に係るめっき装置の一例につ
いて図面を用いて説明する。図1は、本発明のめっき装
置におけるめっき処理部の処理装置本体を示している。
First, an example of the plating apparatus according to the present invention will be described with reference to the drawings. FIG. 1 shows a processing apparatus main body of a plating processing section in the plating apparatus of the present invention.

【0021】同図に示すように、めっき処理部の処理装
置本体2には、例えば、自動車のシリンダブロックのシ
リンダ等の筒状のワーク1が支持されており、当該処理
装置本体2においては、このワーク1の内周面に対して
めっきを施すようになっている。
As shown in the figure, a cylindrical work 1 such as a cylinder of a cylinder block of an automobile is supported by the processing apparatus main body 2 of the plating processing section. The inner peripheral surface of the work 1 is plated.

【0022】上記ワーク1は、シール治具4によりその
上部開口縁部がシールされた状態で、処理装置本体2の
上面側に形成されたワーク支持部3に支持されるように
なっている。なお、このシール治具4は導電性材料から
形成されており、通電の際の接続端子としての機能を兼
ね備えるようになっている。
The work 1 is supported by the work supporting portion 3 formed on the upper surface side of the processing apparatus main body 2 in a state where the upper opening edge portion is sealed by the sealing jig 4. The sealing jig 4 is made of a conductive material and has a function as a connection terminal when energized.

【0023】上記ワーク支持部3には、横方向に延びる
めっき液導入通路5が形成されるとともに、ワーク1の
下部開口部分に対応する位置に、上記めっき液導入通路
5に連通する開口部6が設けられている。そして、ワー
ク支持部3に上記ワーク1が支持された状態では、上記
ワーク1の下部開口部と上記開口部6とが合致して、こ
れらの開口部の周縁が互いに密着するようになってい
る。
A plating solution introducing passage 5 extending in the lateral direction is formed in the work supporting portion 3, and an opening 6 communicating with the plating solution introducing passage 5 is provided at a position corresponding to the lower opening of the work 1. Is provided. Then, when the work 1 is supported by the work supporting portion 3, the lower opening of the work 1 and the opening 6 are aligned with each other, and the peripheral edges of these openings are in close contact with each other. .

【0024】また、上記処理装置本体2には、ワーク1
の開口部分に対応する位置に電極7が配設されている。
この電極7は、円筒状に形成されており、処理装置本体
2の下部壁に取付けられたホルダー8に結合され、上記
めっき液導入通路5を突き抜けて上記開口部6から上方
に突出している。そして、ワーク支持部3に上記ワーク
1が支持された状態で、上記電極7がワーク1の中空部
分に突入して、電極7の上端がワーク1の上端付近まで
達している。これにより、ワーク1の中空部分で上記電
極7の外側と内側とに、上部で互いに連通する流路9,
10が形成されるとともに、外側の流路9が上記めっき
液導入通路5と連通するようになっている。
Further, the processing device main body 2 has a work 1
The electrode 7 is arranged at a position corresponding to the opening of the electrode.
The electrode 7 is formed in a cylindrical shape, is coupled to a holder 8 attached to the lower wall of the processing apparatus main body 2, penetrates through the plating solution introduction passage 5, and projects upward from the opening 6. Then, with the work 1 supported by the work support portion 3, the electrode 7 projects into the hollow portion of the work 1, and the upper end of the electrode 7 reaches near the upper end of the work 1. As a result, in the hollow portion of the work 1, the flow path 9 communicating with the outside and the inside of the electrode 7 at the upper part,
10 is formed, and the outer flow path 9 communicates with the plating solution introduction passage 5.

【0025】また、上記ホルダー8と処理装置本体2の
下部壁とにわたって、電極7の内側の流路10に連通す
るめっき液導出通路11が形成されている。このめっき
液導出通路11は、後述する配管系におけるめっき液回
収管21に連結パイプ12を介して連結されている。
A plating solution outlet passage 11 communicating with the passage 10 inside the electrode 7 is formed across the holder 8 and the lower wall of the processing apparatus main body 2. The plating solution outlet passage 11 is connected to a plating solution recovery pipe 21 in a piping system described later via a connecting pipe 12.

【0026】なお、上記ホルダー8は導電性材料から形
成されており、通電の際の接続端子としての機能を兼ね
備えるようになっている。
The holder 8 is made of a conductive material and has a function as a connection terminal when energized.

【0027】図2は、めっき装置の配管系及び制御系を
示している。
FIG. 2 shows a piping system and a control system of the plating apparatus.

【0028】同図に示すように、めっき浴を貯蔵するタ
ンク15及びこれに接続されたポンプ16と、上記処理
装置本体2との間には、めっき液供給管22及びめっき
液回収管21が配設されている。上記めっき液供給管2
2は、その上流端側がポンプ16に接続される一方、そ
の下流端側が上記処理装置本体2のめっき液導入通路5
に接続されている。また、めっき液供給管22には、ポ
ンプ16の直下流側の位置にバイパス管23が接続さ
れ、このバイパス管23の下流端側がタンク15に至っ
ている。上記めっき液回収管21は、その下流端側が連
結パイプ12を介して上記めっき液供給管22のめっき
液導出通路11に接続される一方、上流端側がタンク1
5に至っている。
As shown in the figure, a plating solution supply pipe 22 and a plating solution recovery pipe 21 are provided between the tank 15 for storing the plating bath and the pump 16 connected thereto and the processing apparatus body 2. It is arranged. The plating solution supply pipe 2
2, the upstream end side thereof is connected to the pump 16 and the downstream end side thereof is the plating solution introduction passage 5 of the processing apparatus main body 2.
It is connected to the. Further, a bypass pipe 23 is connected to the plating solution supply pipe 22 at a position immediately downstream of the pump 16, and the downstream end side of the bypass pipe 23 reaches the tank 15. The downstream end side of the plating solution recovery pipe 21 is connected to the plating solution outlet passage 11 of the plating solution supply pipe 22 via the connecting pipe 12, while the upstream end side thereof is connected to the tank 1.
It has reached 5.

【0029】上記めっき液供給管22及びバイパス管2
3には、それぞれめっき液供給量を調整するための自動
バルブ17,20が設けられている。また、めっき液供
給管22には、上記自動バルブ17の下流側に手動バル
ブ18が設けられるとともに、めっき液供給量を検出す
る流量センサ19が設けられている。
The plating solution supply pipe 22 and the bypass pipe 2
3 are provided with automatic valves 17 and 20 for adjusting the plating solution supply amount, respectively. Further, the plating solution supply pipe 22 is provided with a manual valve 18 downstream of the automatic valve 17 and a flow rate sensor 19 for detecting the plating solution supply amount.

【0030】上記めっき装置には、図2に示すように、
めっき処理動作を統括制御するコントローラ25が設け
られており、上記配管系の自動バルブ17,20、流量
センサ19等は、全てこのコントローラ25に接続され
ている。そして、めっき処理に際しては、流量センサ1
9からの検出信号に基く自動バルブ17,20の開閉操
作により、処理装置本体2に対するめっき液の供給量が
調整され、これにより流路9、すなわち電極7とワーク
1との間を流れるめっき液の流動速度が調整されるよう
になっている。つまり、これらの自動バルブ17,2
0、流量センサ19等により流速調整手段が構成されて
いる。
As shown in FIG. 2, the plating apparatus has
A controller 25 that integrally controls the plating operation is provided, and the automatic valves 17, 20 of the piping system, the flow rate sensor 19 and the like are all connected to this controller 25. When performing the plating process, the flow rate sensor 1
The supply amount of the plating solution to the processing apparatus main body 2 is adjusted by the opening / closing operation of the automatic valves 17 and 20 based on the detection signal from 9, so that the plating solution flowing between the flow path 9, that is, the electrode 7 and the work 1. The flow rate of is adjusted. That is, these automatic valves 17, 2
0, the flow rate sensor 19 and the like constitute flow velocity adjusting means.

【0031】また、上記処理装置本体2のシール治具4
及びホルダー8はそれぞれ、図外の交流電源に接続され
た整流器26に接続され、この整流器26がコントロー
ラ25に接続されている。この整流器26は、めっき処
理に際して、整流した電流を上記ホルダー8を介して電
極7に通電する一方、その電流量が上記コントローラ2
5により変更設定されるようになっており、これにより
電極7に通電する電流の電流密度が調整されるようにな
っている。つまり、整流器26が電流密度調整手段とし
ての機能をも兼ね備えるようになっている。
Further, the sealing jig 4 of the processing apparatus main body 2 is
The holder 8 is connected to a rectifier 26 connected to an AC power supply (not shown), and the rectifier 26 is connected to the controller 25. The rectifier 26 supplies a rectified current to the electrode 7 through the holder 8 during plating, while the amount of the current is the controller 2 described above.
5, the current density of the current passing through the electrode 7 is adjusted. That is, the rectifier 26 also has a function as a current density adjusting means.

【0032】なお、上記コントローラ25には計時手段
としてのタイマー27が設けられており、めっき処理動
作中の時間管理がこのタイマー27により行われるよう
になっている。
The controller 25 is provided with a timer 27 as a time measuring means, and the timer 27 controls the time during the plating process operation.

【0033】以上のように構成された上記のめっき装置
によると、次のようにめっき処理が行われる。
According to the above plating apparatus configured as described above, the plating process is performed as follows.

【0034】上記処理装置本体2にワーク1が支持され
た図1に示す状態で、図2における配管系によりめっき
液の供給、循環が行われるとともに、電極7への通電が
行われ、これによりワーク1の内周面にめっきが施され
る。より具体的には、めっき液供給管22からワーク支
持部3のめっき液導入通路5に供給されためっき液は、
図1中に矢印で示すように、電極7の外側面とワーク1
の中空部分の壁面との間の流路9を通り、ワーク1の上
端部分を経て電極7の内側の流路10へ流れる。そして
さらに、めっき液導出通路11及び連結パイプ12を介
してめっき液回収管21に流れ込み、タンク15に戻さ
れる。こうして、めっき液が循環し、ワーク1の被めっ
き面である中空部分の壁面に沿ってめっき液が流動しつ
つ、上記電極7とワーク1との間に電流が通電されるこ
とによりめっきが施される。
In the state shown in FIG. 1 in which the work 1 is supported by the processing apparatus main body 2, the plating solution is supplied and circulated through the piping system in FIG. 2 and the electrodes 7 are energized, whereby The inner peripheral surface of the work 1 is plated. More specifically, the plating solution supplied from the plating solution supply pipe 22 to the plating solution introduction passage 5 of the work supporting portion 3 is
As shown by the arrow in FIG. 1, the outer surface of the electrode 7 and the work 1
Flows through the flow path 9 between the wall surface of the hollow portion of the work piece 1, the upper end portion of the work 1 and the flow path 10 inside the electrode 7. Then, it further flows into the plating solution recovery pipe 21 through the plating solution outlet passage 11 and the connection pipe 12, and is returned to the tank 15. In this way, the plating solution is circulated and the plating solution flows along the wall surface of the hollow portion which is the surface to be plated of the work 1, while the current is passed between the electrode 7 and the work 1 to perform the plating. To be done.

【0035】ところで、上記のめっき装置によると、め
っき液流動速度を高くすればそれに対応して電流密度を
上昇させることができ、これによってめっき金属の析出
速度が高められるが、分散剤を共析させる複合めっきを
行う場合、上記めっき液流動速度及び電流密度をある程
度以上に高くすると分散剤の共析が著しく阻害される傾
向がある。そこで、以下のように制御することで、ワー
ク1の表面に、分散剤をほとんど共析させない単一めっ
き層と、分散剤を共析させた複合めっき層を一種類のめ
っき浴から積層形成することができるようになってい
る。
By the way, according to the above-mentioned plating apparatus, if the flow rate of the plating solution is increased, the current density can be correspondingly increased, and thus the deposition rate of the plating metal can be increased. In the case of performing composite plating, the eutectoid of the dispersant tends to be significantly hindered if the plating solution flow rate and the current density are increased to a certain level or higher. Therefore, by controlling as follows, a single plating layer in which the dispersant is hardly codeposited and a composite plating layer in which the dispersant is codeposited are laminated on the surface of the work 1 from one type of plating bath. Is able to.

【0036】すなわち、分散剤を含有しためっき浴のめ
っき液を処理装置本体2に対して供給、循環させる。そ
して、図3に示すように、先ず、めっき処理開始時点か
らの一定時間(第1時間域)T1は、電極7とワーク1
との間を流れるめっき液を高速、かつ定速度で流動させ
るとともに、この間、電極7に一定の高電流密度の電流
を通電するようにする。そして、次に、上記時間(T
1)の経過後の一定時間(第2時間域)T2は、処理装
置本体2への供給めっき液の量を減らし、これにより電
極7とワーク1との間を流れるめっき液を低速、かつ定
速度で流動させるとともに、この間、電極7に一定の低
電流密度の電流を通電するようにする。
That is, the plating solution of the plating bath containing the dispersant is supplied to the processing apparatus main body 2 and circulated. Then, as shown in FIG. 3, first, a fixed time (first time range) T1 from the start of the plating process is the electrode 7 and the work 1.
The plating solution flowing between and is made to flow at a high speed and at a constant speed, and during this time, a current having a constant high current density is applied to the electrode 7. Then, next, the time (T
At a certain time (second time period) T2 after the passage of 1), the amount of the plating solution supplied to the processing apparatus main body 2 is reduced, whereby the plating solution flowing between the electrode 7 and the work 1 is at a low speed and is constant. While flowing at a speed, during this period, a constant low current density current is applied to the electrode 7.

【0037】ここで、第2時間域T2におけるめっき液
流動速度及び電流密度は、分散剤共析量が充分に得られ
る程度(例えば流動速度が2m/sec程度)として、第1
時間域T1におけるめっき液流動速度及び電流密度は、
第2時間域T2におけるそれぞれの値よりもかなり高い
値(例えば流動速度が4〜5m/sec程度)とする。
Here, the flow rate and current density of the plating solution in the second time period T2 are set so that the sufficient amount of dispersant eutectoid is obtained (for example, the flow rate is about 2 m / sec).
The plating solution flow velocity and current density in the time region T1 are
It is set to a value considerably higher than each value in the second time region T2 (for example, the flow velocity is about 4 to 5 m / sec).

【0038】このようにすることにより、めっき液を高
速で流動させ、かつ高電流密度の電流を通電する期間中
は分散剤の共析が阻害され易く、分散剤がほとんど共析
されない単一めっき層が形成される。一方、めっき液を
低速で流動させ、かつ低電流密度の電流を通電した場合
には、分散剤の共析が促進され、分散剤が充分に共析さ
れた複合めっき層が形成される。従って、上述のように
めっき液を高速で流動させ、かつ高電流密度の電流を通
電する処理と、めっき液を低速で流動させ、かつ低電流
密度の電流を通電する処理とを連続して行うことで、図
4に示すように、ワーク1の表面には、先ず、単一めっ
き層Paが形成され、次いでその表面に複合めっき層P
bが形成されることになる。従って、一種類のめっき浴
から単一めっき層Paと複合めっき層Pbとを積層形成
することができる。
By doing so, the co-deposition of the dispersant is likely to be hindered during the period in which the plating solution is made to flow at a high speed and a current having a high current density is applied, and the dispersant is hardly co-deposited in the single plating. A layer is formed. On the other hand, when the plating solution is made to flow at a low speed and a current having a low current density is applied, the co-deposition of the dispersant is promoted and a composite plating layer in which the dispersant is sufficiently co-deposited is formed. Therefore, as described above, the process of flowing the plating solution at high speed and passing a current of high current density and the process of flowing the plating solution at low speed and passing a current of low current density are continuously performed. Thus, as shown in FIG. 4, the single plating layer Pa is first formed on the surface of the work 1, and then the composite plating layer P is formed on the surface.
b will be formed. Therefore, the single plating layer Pa and the composite plating layer Pb can be laminated and formed from one type of plating bath.

【0039】この場合、正確には単一めっき層Paに
も、多少の分散剤が含まれているがその量はほぼ無視す
るに等しく、機能上は純粋の単一めっき層と同等といえ
る。なお、実施例においては、めっき浴、分散剤として
それぞれ、ニッケル浴、シリコンカーバイドを用い、先
ず、めっき液の流動速度を5m/sec、電流密度を300A
/dm2として処理を施した後、流動速度を2m/sec、電流
密度を100A/dm2とすることで、単一めっき層と複合
めっき層とを好適に積層形成することに成功している。
特に、この場合、単一めっき層へのシリコンカーバイト
の共析はほとんどなく、好適な単一めっき層を得ること
ができた。
In this case, to be precise, the single plating layer Pa also contains some dispersant, but the amount thereof is almost negligible, and it can be said that it is functionally equivalent to a pure single plating layer. In the examples, a nickel bath and a silicon carbide were used as the plating bath and the dispersant, respectively, and the flow rate of the plating solution was 5 m / sec and the current density was 300 A.
After processing as / dm 2 , the flow velocity is set to 2 m / sec and the current density is set to 100 A / dm 2 , whereby the single plating layer and the composite plating layer are successfully laminated. .
In particular, in this case, there was almost no eutectoid of silicon carbide on the single plating layer, and a suitable single plating layer could be obtained.

【0040】このように、上記の制御によれば、分散剤
を共析させない単一めっき層と分散剤を共析させた複合
めっき層との積層形成を、同一のめっき浴で行うことが
できるので、ワークを複数のめっき浴の浴槽間で移動さ
せながらめっきを施すといった、従来のこの種のめっき
方法と比較すると、作業効率の面、設備の面、あるいは
コストの面で極めて有利である。特に、上記単一めっき
層Paの形成に際しては、高電流密度の電流を電極7に
通電しながらめっき処理が行われるので、これによりめ
っきの析出速度が高められることになり、単一めっき層
Paを極めて短時間で形成することが可能であり、作業
効率の面でも有利である。
As described above, according to the above control, it is possible to form a single plating layer in which the dispersant is not co-deposited and a composite plating layer in which the dispersant is co-deposited in the same plating bath. Therefore, it is extremely advantageous in terms of work efficiency, equipment, or cost, as compared with the conventional plating method of this type, in which the work is plated while being moved between a plurality of plating baths. In particular, when the single plating layer Pa is formed, the plating process is performed while applying a high current density current to the electrode 7, so that the deposition rate of the plating can be increased. Can be formed in an extremely short time, which is also advantageous in terms of work efficiency.

【0041】なお、以上は、ワーク1に単一めっき層P
aを形成し、その表面に複合めっき層Pbを形成した2
層めっきの例について説明したが、例えば、耐食性等の
目的から、より多くのめっき層を積層形成する必要があ
る場合には、めっき液の流動速度及び通電電流の電流密
度を複数回高低変化させるようにすればよい。
The above is the single plating layer P on the work 1.
a is formed, and a composite plating layer Pb is formed on the surface 2
Although the example of layer plating has been described, for example, when it is necessary to stack more plating layers for the purpose of corrosion resistance and the like, the flow rate of the plating solution and the current density of the energizing current are changed several times. You can do it like this.

【0042】例えば、図5に示すように、めっき液の流
動速度及び通電電流の電流密度を、時間t1〜t4の時
間間隔で交互に高低変化させるようにすれば、図6に示
すように、ワーク1の表面に、単一めっき層Paと複合
めっき層Pbが交互に積層された4層めっきを施すこと
が可能である。このようにすると、耐食性向上等に有利
となる。特に、この場合、2つの複合めっき層Pbに対
するめっき液の流動速度及び通電電流の電流密度をそれ
ぞれ異ならせることで、それぞれ分散剤の共析密度が異
なる複合めっき層Pbを形成することが可能となり、め
っきの多様化を図ることができるという利点がある。
For example, as shown in FIG. 5, if the flow rate of the plating solution and the current density of the energizing current are alternately changed in height at time intervals t1 to t4, as shown in FIG. It is possible to perform four-layer plating in which the single plating layers Pa and the composite plating layers Pb are alternately laminated on the surface of the work 1. This is advantageous for improving corrosion resistance and the like. In this case, in particular, it is possible to form the composite plating layers Pb having different eutectoid densities of the dispersants by making the flow rate of the plating solution and the current density of the applied current different for the two composite plating layers Pb. The advantage is that the plating can be diversified.

【0043】また、図7に示すように、めっき処理開始
から一定時間T1′は、めっき液を高速速度で流動させ
つつ電極7に高電流密度の電流を通電し、この時間T
1′の経過後一定時間T2′は、めっき液の流動速度及
通電電流の電流密度をそれぞれ漸減させるようにし、こ
れによって、図8に示すように、ワーク1の被めっき面
側に分散剤がほとんど共析されない部分が形成され、か
つ、めっき層表面側に向かって分散剤の共析密度が高く
なるような複合めっき層Pcを形成するようにしてもよ
い。この複合めっき層Pcによれば、単一層の複合めっ
きでありながらも、上記実施例のめっき層、つまりワー
ク1の被めっき面に単一めっき層Paを形成し、その表
面に複合めっき層Pbを積層形成したものと同様に、複
合めっきの利点を有しながらワークに対する密着強度を
高めることができる。
Further, as shown in FIG. 7, for a certain time T1 'from the start of the plating process, a high current density current is passed through the electrode 7 while the plating solution is flowing at a high speed, and this time T1' is passed.
At a certain time T2 'after the lapse of 1', the flow velocity of the plating solution and the current density of the energizing current are gradually reduced, whereby the dispersant is not applied to the surface of the workpiece 1 to be plated as shown in FIG. It is also possible to form the composite plating layer Pc in which a portion that is hardly codeposited is formed and the eutectoid density of the dispersant increases toward the plating layer surface side. According to this composite plating layer Pc, even though it is a single-layer composite plating, the single plating layer Pa is formed on the plating layer of the above-mentioned embodiment, that is, the surface to be plated of the work 1, and the composite plating layer Pb is formed on the surface. As in the case of the laminate-forming, the adhesion strength to the work can be increased while having the advantage of the composite plating.

【0044】[0044]

【発明の効果】以上説明したように、本発明のめっき方
法によれば、分散剤が含有された一種類のめっき浴で、
めっき層の厚み方向に分散剤の共析密度がめっき層の厚
み方向に変化するめっき層を形成することができる。
As described above, according to the plating method of the present invention, one type of plating bath containing a dispersant,
A plating layer in which the eutectoid density of the dispersant changes in the thickness direction of the plating layer can be formed.

【0045】特に、めっき処理において、めっき液を高
速度で流動させつつ高電流密度の電流を通電した後、め
っき液の流動速度及び供給電流の電流密度を漸減させる
ようにすれば、単一層の複合めっきにおいて、ワークの
被めっき面側に分散剤がほとんど共析されなり部分が形
成され、かつ、表面側に向かって分散剤の共析密度が高
くなるようなめっき層を形成することができ、これによ
りワークに対して密着強度の高い複合めっきを一種類の
めっき浴で形成することができる。
In particular, in the plating treatment, if the flow rate of the plating solution and the current density of the supplied current are gradually decreased after the current having a high current density is passed while the plating solution is flowing at a high rate, a single layer can be formed. In composite plating, it is possible to form a plating layer in which the dispersant is almost co-deposited on the surface of the work to be plated and the eutectoid density of the dispersant increases toward the surface. As a result, composite plating having high adhesion strength to the work can be formed with one type of plating bath.

【0046】また、めっき液の流動速度及び上記供給電
流の電流密度を所定の時間間隔で変動させるようにすれ
ば、分散剤の共析密度が異なる複数のめっき層が積層を
形成することができる。この場合、めっき液を高速度で
流動させつつ高電流密度の電流を供給した後、めっき液
を低速度で流動させつつ低電流密度の電流を供給するよ
うにすることで、ワークの被めっき面に、先ず分散剤が
ほとんど共析されないめっき層を形成し、その表面に分
散剤が共析されためっき層を形成するこができ、これに
より、ワークに対して密着強度の高い複合めっきを一種
類のめっき浴で形成することができる。
If the flow rate of the plating solution and the current density of the supply current are varied at predetermined time intervals, a plurality of plating layers having different eutectoid densities of the dispersant can form a laminate. . In this case, by supplying a high current density current while flowing the plating solution at a high speed, and then supplying a low current density current while flowing the plating solution at a low speed, First, a plating layer in which the dispersant is hardly codeposited can be formed, and a plating layer in which the dispersant is codeposited can be formed on the surface of the plating layer. It can be formed with any type of plating bath.

【0047】また、上記めっき浴としてニッケル浴を用
い、上記分散剤としてシリコンカーバイドを用いれば、
めっき液を高速度で流動させつつ高電流密度の電流を通
電する時間帯では、シリコンカーバイドがほとんど共析
されないニッケルめっき層が得られ、めっき液を低速度
で流動させつつ低電流密度の電流を通電する時間帯で
は、シリコンカーバイドが充分に共析したNi-SiC複合め
っき層が得られる。
If a nickel bath is used as the plating bath and silicon carbide is used as the dispersant,
In the time zone in which the plating solution is made to flow at a high current density while flowing a high current density, a nickel plating layer in which silicon carbide is hardly codeposited is obtained, and a low current density current is made to flow while the plating solution is made to flow at a low speed. In the time zone when electricity is applied, a Ni-SiC composite plating layer in which silicon carbide is sufficiently codeposited is obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るめっき装置の処理装置本体の一例
を示す断面略図である。
FIG. 1 is a schematic sectional view showing an example of a processing apparatus main body of a plating apparatus according to the present invention.

【図2】本発明に係るめっき装置の配管系及び制御系を
示す概略図である。
FIG. 2 is a schematic diagram showing a piping system and a control system of the plating apparatus according to the present invention.

【図3】本発明のめっき方法の一例を示すタイムチャー
トである。
FIG. 3 is a time chart showing an example of the plating method of the present invention.

【図4】図3に示す方法により得られるめっきを示す断
面略図である。
4 is a schematic sectional view showing plating obtained by the method shown in FIG.

【図5】本発明のめっき方法の別の一例を示すタイムチ
ャートである。
FIG. 5 is a time chart showing another example of the plating method of the present invention.

【図6】図5に示す方法により得られるめっきを示す断
面略図である。
FIG. 6 is a schematic cross-sectional view showing plating obtained by the method shown in FIG.

【図7】本発明のめっき方法の別の一例を示すタイムチ
ャートである。
FIG. 7 is a time chart showing another example of the plating method of the present invention.

【図8】図7に示す方法により得られるめっきを示す断
面略図である。
8 is a schematic cross-sectional view showing plating obtained by the method shown in FIG.

【符号の説明】[Explanation of symbols]

1 ワーク 2 処理装置本体 3 ワーク支持部 4 シール治具 7 電極 8 ホルダー 15 タンク 16 ポンプ 17,20 自動バルブ 18 手動バルブ 19 流量センサ 21 めっき液回収管 22 めっき液供給管 23 バイパス管 25 コントローラ 26 整流器 27 タイマー 1 Work 2 Processing Device Main Body 3 Work Support 4 Seal Jig 7 Electrode 8 Holder 15 Tank 16 Pump 17,20 Automatic Valve 18 Manual Valve 19 Flow Rate Sensor 21 Plating Liquid Recovery Pipe 22 Plating Liquid Supply Pipe 23 Bypass Pipe 25 Controller 26 Rectifier 27 timer

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 分散剤を含有しためっき浴のめっき液
を、ワークの被めっき面と電極の間で流動させつつ電流
を通電してめっきを施す方法において、上記めっき液の
流動速度及び上記供給電流の電流密度をめっき処理中の
時間経過に応じて変動させ、上記ワークの被めっき面に
形成されるめっき層の分散剤の共析密度を、めっき層の
厚み方向に変化させることを特徴とするめっき方法。
1. A method of performing plating by applying an electric current while flowing a plating solution of a plating bath containing a dispersant between a surface to be plated of a work and an electrode, the flow rate of the plating solution and the supply thereof. The current density of the current is changed according to the passage of time during the plating process, and the eutectoid density of the dispersant of the plating layer formed on the plated surface of the work is changed in the thickness direction of the plating layer. Plating method.
【請求項2】 上記めっき液を高速度で流動させつつ高
電流密度の電流を通電した後、めっき液の流動速度及び
供給電流の電流密度を漸減させることを特徴とする請求
項1記載のめっき方法。
2. The plating according to claim 1, wherein after flowing a current having a high current density while flowing the plating solution at a high speed, the flow rate of the plating solution and the current density of the supply current are gradually reduced. Method.
【請求項3】 上記めっき液の流動速度及び上記供給電
流の電流密度を所定の時間間隔で変動させ、上記めっき
層として、分散剤の共析密度が異なる複数のめっき層を
積層形成することを特徴とする請求項1記載のめっき方
法。
3. A method in which a plurality of plating layers having different eutectoid densities of dispersants are laminated as the plating layers by varying the flow rate of the plating solution and the current density of the supply current at predetermined time intervals. The plating method according to claim 1, which is characterized in that.
【請求項4】 上記めっき液を高速度で流動させつつ高
電流密度の電流を通電した後、上記めっき液を低速度で
流動させつつ低電流密度の電流を通電することを特徴と
する請求項3記載のめっき方法。
4. The plating solution is caused to flow at a high speed while a current having a high current density is passed through, and then the plating solution is caused to flow at a low speed to pass a current having a low current density. 3. The plating method described in 3.
【請求項5】 上記めっき浴としてニッケル浴を用い、
上記分散剤としてシリコンカーバイドを用いたことを特
徴とする請求項1乃至4記載のめっき方法。
5. A nickel bath is used as the plating bath,
5. The plating method according to claim 1, wherein silicon carbide is used as the dispersant.
【請求項6】 分散剤を含有しためっき浴のめっき液
を、ワークの被めっき面と電極の間で流動させつつ電流
を通電してめっきを施す装置において、ワークの被めっ
き面と電極の間のめっき液の流動速度を調整する流速調
整手段と、上記通電電流の電流密度を調整する電流密度
調整手段と、めっき処理中の時間経過を計測する計時手
段と、上記時間経過に応じてめっき液の上記流動速度及
び通電電流の上記電流密度を変動させるように上記流速
調整手段及び電流密度調整手段を制御する制御手段とを
備えたことを特徴とするめっき装置。
6. An apparatus for performing plating by applying an electric current while flowing a plating solution of a plating bath containing a dispersant between a surface to be plated of a work and an electrode, and between the surface to be plated of the work and the electrode. Flow rate adjusting means for adjusting the flow rate of the plating solution, current density adjusting means for adjusting the current density of the energizing current, time measuring means for measuring the passage of time during the plating treatment, and the plating solution according to the passage of time. And a control means for controlling the flow velocity adjusting means and the current density adjusting means so as to change the flow velocity and the current density of the applied current.
JP2202795A 1994-02-21 1995-02-09 Plating method and device therefor Pending JPH07278879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2202795A JPH07278879A (en) 1994-02-21 1995-02-09 Plating method and device therefor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2264094 1994-02-21
JP6-22640 1994-02-21
JP2202795A JPH07278879A (en) 1994-02-21 1995-02-09 Plating method and device therefor

Publications (1)

Publication Number Publication Date
JPH07278879A true JPH07278879A (en) 1995-10-24

Family

ID=26359185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2202795A Pending JPH07278879A (en) 1994-02-21 1995-02-09 Plating method and device therefor

Country Status (1)

Country Link
JP (1) JPH07278879A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19702366A1 (en) * 1996-01-24 1997-08-07 Toyoda Gosei Kk Coating a metal substrate
US5865976A (en) * 1994-10-07 1999-02-02 Toyoda Gosei Co., Inc. Plating method
JP2002047598A (en) * 2000-05-17 2002-02-15 Miba Gleitlager Ag Method for separating dispersed layer on surface of work piece direct current manner
JP2006028603A (en) * 2004-07-16 2006-02-02 Ricoh Co Ltd Mold for molding, mold for molding optical disk substrate, metallic shaft, metallic bearing, and compound metallic material, and method for manufacturing compound metallic material
JP2009102674A (en) * 2007-10-22 2009-05-14 Ebara Corp Plating method and plating apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865976A (en) * 1994-10-07 1999-02-02 Toyoda Gosei Co., Inc. Plating method
DE19702366A1 (en) * 1996-01-24 1997-08-07 Toyoda Gosei Kk Coating a metal substrate
DE19702366C2 (en) * 1996-01-24 2002-10-31 Toyoda Gosei Kk coating process
JP2002047598A (en) * 2000-05-17 2002-02-15 Miba Gleitlager Ag Method for separating dispersed layer on surface of work piece direct current manner
JP2006028603A (en) * 2004-07-16 2006-02-02 Ricoh Co Ltd Mold for molding, mold for molding optical disk substrate, metallic shaft, metallic bearing, and compound metallic material, and method for manufacturing compound metallic material
JP2009102674A (en) * 2007-10-22 2009-05-14 Ebara Corp Plating method and plating apparatus

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