JPH07273021A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH07273021A JPH07273021A JP6306430A JP30643094A JPH07273021A JP H07273021 A JPH07273021 A JP H07273021A JP 6306430 A JP6306430 A JP 6306430A JP 30643094 A JP30643094 A JP 30643094A JP H07273021 A JPH07273021 A JP H07273021A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- photosensitive film
- photosensitive
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特にリソグラフィ（Lithography)工程による微
細パターン形成の際、光コントラストの向上のため感光
膜下部に反射防止膜パターンを形成する半導体装置の製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device in which an antireflection film pattern is formed under a photosensitive film to improve optical contrast when a fine pattern is formed by a lithography process. Manufacturing method.
【０００２】光リソグラフィー工程で微細パターンを形
成する方法において、マスクと感光膜を通して入射する
入射波はパターンを形成しようとする下部層表面で反射
し、反射された光が感光膜の表面で再反射して再び下部
層と感光膜を複数回往復しながら感光膜にエネルギーを
伝達することになる。In a method of forming a fine pattern in a photolithography process, an incident wave incident through a mask and a photosensitive film is reflected on the surface of a lower layer to form a pattern, and the reflected light is reflected again on the surface of the photosensitive film. Then, energy is transferred to the photosensitive film again while reciprocating between the lower layer and the photosensitive film a plurality of times.
【０００３】[0003]
【従来の技術】図１は、従来の技術で感光膜パターンの
形成工程を示した断面図である。図１（Ａ）は、半導体
基板（１０）の上部にパターンを形成しようとする下部
層（１４）に感光膜（１３）を塗布し、石英基板にクロ
ームパターンが備えられたマスク（１２）を用いて光
（１１）を感光膜（１３）に露光する工程であり、感光
膜（１３）の表面で光（１１）の一部は反射し、また、
感光膜（１３）を透過した光は下部層（１４）の表面で
反射し、この反射された光（１６）が感光膜（１３）の
表面で再反射し、このような反射を複数回繰り返しなが
ら非露光地域の感光膜まで露光されることを示してい
る。2. Description of the Related Art FIG. 1 is a sectional view showing a process of forming a photosensitive film pattern by a conventional technique. In FIG. 1A, a photosensitive layer 13 is applied to a lower layer 14 for forming a pattern on a semiconductor substrate 10, and a mask 12 having a chrome pattern is provided on a quartz substrate. Is a step of exposing the photosensitive film (13) to light (11) by using the light (11), part of the light (11) is reflected on the surface of the photosensitive film (13), and
The light transmitted through the photosensitive film (13) is reflected on the surface of the lower layer (14), and the reflected light (16) is reflected again on the surface of the photosensitive film (13), and such reflection is repeated a plurality of times. However, it shows that even the photosensitive film in the non-exposed area is exposed.
【０００４】一方、マスク（１２）のクロームパターン
の縁側で回折され、感光膜（１３）に入射した光（１
５）は、下部層（１４）の表面より反射する。On the other hand, light (1) which is diffracted on the edge side of the chrome pattern of the mask (12) and is incident on the photosensitive film (13).
5) is reflected from the surface of the lower layer (14).
【０００５】[0005]
【発明が解決しようとする課題】図１（Ｂ）は、露光し
た感光膜（１３）を現像工程で除去して感光膜パターン
（１３Ａ）を形成した断面図であり、感光膜パターン
（１３Ａ）の側壁にある感光膜が除去されたノッチング
（２０）の発生を示す。FIG. 1B is a cross-sectional view in which the exposed photosensitive film (13) is removed in a developing process to form a photosensitive film pattern (13A). The photosensitive film pattern (13A) is shown in FIG. Figure 3 shows the occurrence of notching (20) with the photoresist removed on the sidewalls of the.
【０００６】特に、図１のマスクに備えられたクローム
パターンと、クロームパターンとの間隔が露光波長
（λ）と近接する場合、光がマスクを透過する時に激し
い回折現象が発生する。このため、感光膜パターンのプ
ロファイルがさらに悪くなる。Particularly, when the distance between the chrome pattern provided in the mask of FIG. 1 and the chrome pattern is close to the exposure wavelength (λ), a severe diffraction phenomenon occurs when light passes through the mask. Therefore, the profile of the photosensitive film pattern becomes worse.
【０００７】ＭＴＦ(Modulation transfer function)
で、Ｍはマスクを通過した後の強度分布として、MTF (Modulation transfer function)
Where M is the intensity distribution after passing through the mask,
【数１】 普通のモデュレイションＭは前記マスクに形成されたク
ロームパターンの間隔（Line Space) に影響を受ける
が、間隔が小さくなるほどＭ値が小さくなる。このよう
になれば、感光膜では光の強度が効率的に分布されず感
光膜パターンを形成すことがないとか、形成されても感
光膜パターンが垂直パターンを形成することができなく
なる。このような低いＭ値は、さらに工程マージンを減
少させ半導体製造工程を難しくする。[Equation 1] The ordinary modulation M is affected by the space (Line Space) of the chrome patterns formed on the mask, but the smaller the space, the smaller the M value. In this case, the light intensity is not efficiently distributed in the photosensitive film, and the photosensitive film pattern is not formed, or even if the photosensitive film pattern is formed, the photosensitive film pattern cannot form a vertical pattern. Such a low M value further reduces the process margin and makes the semiconductor manufacturing process difficult.
【０００８】本発明は前記の如く感光膜パターンにノッ
チングが発生するのを防止し、感光膜パターンのプロフ
ァイルを向上させるための感光膜パターンを製造する方
法を提供することにその目的がある。It is an object of the present invention to provide a method of manufacturing a photosensitive film pattern for preventing notching of the photosensitive film pattern as described above and improving the profile of the photosensitive film pattern.
【０００９】前記した目的を達成するため、本発明は下
部層の上部に反射防止膜パターンを形成し、その上部に
更に感光膜パターンを形成して前記反射防止膜パターン
によりプロファイルが良好な感光膜パターンを得るよう
にするものである。In order to achieve the above-mentioned object, the present invention forms an antireflective film pattern on the lower layer and further forms a photosensitive film pattern on the lower layer to form a photosensitive film having a good profile by the antireflective film pattern. It is to get the pattern.
【００１０】本発明によれば半導体装置の製造方法にお
いて、パターン化しようとする下部層の上部に反射防止
膜を塗布する工程と、反射防止膜上部に第１感光膜を塗
布し、マスクを用いた露光工程と現像工程を実施して第
１感光膜パターンを形成する工程と、露出した反射防止
膜をエッチングして反射防止膜パターンを形成する工程
と、前記第１感光膜パターンを除去し更に第２感光膜を
塗布する工程と、前記マスクを再度用いた露光工程と現
像工程で第２感光膜パターンを形成する工程と、露光し
た反射防止膜パターンをエッチングし、更に下部層をエ
ッチングして下部層パターンを形成する工程を含み、希
望する大きさの下部層パターンを得る半導体装置の製造
法にある。According to the present invention, in a method of manufacturing a semiconductor device, a step of applying an antireflection film on an upper layer of a lower layer to be patterned and a step of applying a first photosensitive film on the antireflection film and using a mask. The exposing step and the developing step to form a first photosensitive film pattern, the exposed antireflection film is etched to form an antireflection film pattern, and the first photosensitive film pattern is removed. A step of applying a second photosensitive film, a step of forming a second photosensitive film pattern by an exposing step and a developing step using the mask again, etching the exposed antireflection film pattern, and further etching a lower layer. A method of manufacturing a semiconductor device, which includes a step of forming a lower layer pattern, to obtain a lower layer pattern having a desired size.
【００１１】[0011]
【作用】本発明によれば、露光地域では従来の光の強度
を維持しながら非露光地域では入射光や反射光を反射防
止膜パターンで吸収することにより、光の強度が低下す
る。そのため、最大光強度Ｉ'max値は同一であるが、最
小光強度I'min 値が低下して光コントラストが改良され
る。その結果、フォト工程のマージンが増加し微細パタ
ーンの形成が一層容易になる。According to the present invention, while the conventional light intensity is maintained in the exposed area, the incident light or the reflected light is absorbed by the antireflection film pattern in the non-exposed area, whereby the light intensity is reduced. Therefore, although the maximum light intensity I'max value is the same, the minimum light intensity I'min value is lowered and the light contrast is improved. As a result, the margin of the photo process is increased and the formation of the fine pattern is further facilitated.
【００１２】[0012]
【実施例】以下、添付した図面を参照して本発明を詳細
に説明する。図２〜図６は、本発明により感光膜パター
ンを形成する順序工程を示す断面図である。図２は、半
導体基板（１０）上部に下部層（１４）と反射防止膜
（１５）を蒸着した後、該上部にポジティブ第１感光膜
（１３）を塗布し、従来と同様のマスク（１２）を用い
て第１感光膜（１３）に光（１１）を露光させる工程を
示した断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings. 2 to 6 are sectional views showing sequential steps of forming a photoresist pattern according to the present invention. In FIG. 2, a lower layer (14) and an antireflection film (15) are deposited on the semiconductor substrate (10), and then a positive first photoresist film (13) is applied on the lower layer (14) and the antireflection film (15). FIG. 9 is a cross-sectional view showing a step of exposing the first photosensitive film (13) to light (11) using the above method.
【００１３】前記反射防止膜（１４）は、例えばＴｉ
Ｎ、Ｓｉ3 Ｎ4 膜又は、ＳｉＯx Ｎｙ：Ｈを用いた膜で
２５０〜２０００Å程度に形成する。ここで第１感光膜
（１３）を通過した光は、下部の反射防止膜（１５）で
殆ど吸収されて反射光が発生しなくなる。The antireflection film (14) is made of, for example, Ti.
An N, Si 3 N 4 film or a film using SiO x Ny: H is formed to a thickness of about 250 to 2000 Å. Here, the light that has passed through the first photosensitive film (13) is almost absorbed by the lower antireflection film (15) and the reflected light does not occur.
【００１４】図３は、露光した第１感光膜（１３）を現
像工程で除去し第１感光膜パターン（１３Ｂ）を形成し
た工程を示す断面図であり、露光地域に入射した光は反
射防止膜（１５）で殆ど吸収され、光の強度が低くな
る。そのため、露光地域の下部の角部には感光膜が露光
しなくなり現像工程後にも第１感光膜（１３）が残るこ
とを示す。FIG. 3 is a cross-sectional view showing a process of removing the exposed first photosensitive film (13) in a developing process to form a first photosensitive film pattern (13B). Light incident on the exposed area is prevented from being reflected. Most of the light is absorbed by the film (15) and the intensity of light is reduced. Therefore, it is shown that the photosensitive film is not exposed at the lower corners of the exposed area and the first photosensitive film (13) remains after the developing process.
【００１５】図４は、下部に露出した反射防止膜（１
５）をエッチングして反射防止膜パターン（１５Ａ）を
形成した工程を示す断面図である。前記反射防止膜パタ
ーン（１５Ａ）は、露光地域にも一定部分が残ることに
なり希望する面積より大きく形成される。FIG. 4 shows an antireflection film (1) exposed at the bottom.
It is sectional drawing which shows the process of etching 5) and forming the antireflection film pattern (15A). The antireflection film pattern (15A) is formed larger than a desired area because a certain portion remains in the exposed area.
【００１６】図５は、前記第１感光膜パターン（１３
Ｂ）を除去し、更にポジティブ第２感光膜（１９）を約
１００００Å程度に塗布し、前記のマスク（１２）を再
使用して第２感光膜（１９）を露光させた工程を示す断
面図である。FIG. 5 shows the first photoresist pattern (13).
A cross-sectional view showing a process of removing B), applying a positive second photosensitive film (19) to a thickness of about 10,000 Å, and reusing the mask (12) to expose the second photosensitive film (19). Is.
【００１７】前記工程で光（１１）が第２感光膜に露光
する場合、露光地域では下部層（１４）の表面より反射
が発生し、これにより光の強度が増加し、非露光地域で
は反射防止膜パターン（１５Ａ）より入射する光は全て
吸収されるため、光の強度が減少し、露光地域と非露光
地域での光コントラストが増加する。特に、露光地域に
残っている反射防止膜（１５Ａ）より入射する光を吸収
することにより、非露光地域に入射することを防止する
ことができる。When the light (11) is exposed to the second photosensitive film in the above process, reflection occurs from the surface of the lower layer (14) in the exposed area, which increases the light intensity and reflects in the non-exposed area. Since all the light incident from the prevention film pattern (15A) is absorbed, the intensity of the light decreases and the light contrast in the exposed area and the non-exposed area increases. Particularly, by absorbing the incident light from the antireflection film (15A) remaining in the exposed area, it is possible to prevent the incident light from entering the non-exposed area.
【００１８】図６は、露光した地域の第２感光膜（１
９）を現像工程で除去して第２感光膜パターン（１９
Ａ）を形成し、露出する反射防止膜パターン（１５Ａ）
をエッチングした工程を示す断面図であり、第２感光膜
パターン（１９Ａ）の側壁は、殆ど垂直なプロファイル
を有し、希望する大きさに形成されることを示す。FIG. 6 shows the second photosensitive film (1) in the exposed area.
9) is removed in the developing process to remove the second photoresist pattern (19
A) forming and exposing an antireflection film pattern (15A)
FIG. 9B is a cross-sectional view showing a step of etching the first photoresist pattern, showing that the sidewall of the second photosensitive film pattern (19A) has an almost vertical profile and is formed in a desired size.
【００１９】前記の第２感光膜パターンを用いて露出し
た下部層をエッチングすることになれば、希望する下部
層のパターンを形成することができる。If the exposed lower layer is etched using the second photoresist pattern, a desired lower layer pattern can be formed.
【００２０】図７は、従来の方法と本発明の方法とによ
り得られる露光エネルギーを比較して示したものであ
り、Ｘ軸はマスクの横軸、そしてＹ軸は露光エネルギー
であり、図面の符号８は従来の方法により得られる光の
強度であり、図面符号９は本発明により得られる光の強
度である。FIG. 7 shows a comparison of the exposure energies obtained by the conventional method and the method of the present invention, where the X axis is the horizontal axis of the mask and the Y axis is the exposure energy. Reference numeral 8 is the light intensity obtained by the conventional method, and reference numeral 9 is the light intensity obtained by the present invention.
【００２１】[0021]
【発明の効果】前記した本発明によれば、 （１）露光エネルギー分布強度を任意に調節して光コン
トラストを向上させることにより超微細パターンまで形
成することができる。 （２）下部層で反射する光を選択的に吸収あるいは反射
させ、感光膜パターンのプロファイルをさらに垂直パタ
ーンに形成することができる。 （３）露光地Ｄの露光エネルギーを大きくして感光膜の
残留を防止することができる。 （４）定在波（Standing Wave)を部分的に遮断すること
ができる。 （５）感光膜パターンのノッチング現象を防止すること
ができる。According to the present invention described above, (1) an ultrafine pattern can be formed by arbitrarily adjusting the exposure energy distribution intensity to improve the optical contrast. (2) The light reflected by the lower layer can be selectively absorbed or reflected to further form the profile of the photosensitive film pattern into a vertical pattern. (3) The exposure energy of the exposed area D can be increased to prevent the photosensitive film from remaining. (4) Standing waves can be partially blocked. (5) It is possible to prevent the notching phenomenon of the photosensitive film pattern.
【図１】図１の（Ａ），（Ｂ）は、従来の技術により感
光膜パターンを形成する工程を示す断面図である。1A and 1B are cross-sectional views showing a process of forming a photosensitive film pattern by a conventional technique.
【図２】図２は、本発明により感光膜パターンを形成す
る順序工程を示す断面図である。FIG. 2 is a sectional view showing a sequential process of forming a photoresist pattern according to the present invention.
【図３】図３は、本発明により感光膜パターンを形成す
る順序工程を示す断面図である。FIG. 3 is a cross-sectional view showing a sequential process of forming a photoresist pattern according to the present invention.
【図４】図４は、本発明により感光膜パターンを形成す
る順序工程を示す断面図である。FIG. 4 is a cross-sectional view showing a sequential process of forming a photoresist pattern according to the present invention.
【図５】図５は、本発明により感光膜パターンを形成す
る順序工程を示す断面図である。FIG. 5 is a cross-sectional view showing a sequential process of forming a photoresist pattern according to the present invention.
【図６】図６は、本発明により感光膜パターンを形成す
る順序工程を示す断面図である。FIG. 6 is a cross-sectional view showing a sequential process of forming a photoresist pattern according to the present invention.
【図７】図７は、従来方法と本発明方法により得られる
露光エネルギーを比較して示した特性図である。FIG. 7 is a characteristic diagram showing a comparison of exposure energies obtained by the conventional method and the method of the present invention.
【符号の説明】 １１ 光 １３，１９ 感光膜 １０ 半導体基板 １４ 下部層 １５ 反射防止膜[Explanation of Codes] 11 Light 13, 19 Photosensitive Film 10 Semiconductor Substrate 14 Lower Layer 15 Antireflection Film
Claims (6)
布する工程と、反射防止膜の上部に第１感光膜を塗布
し、マスクを用いた露光工程と現像工程を行い第１感光
膜パターンを形成する工程と、 露出した反射防止膜をエッチングし、反射防止膜パター
ンを形成する工程と、 前記第１感光膜パターンを除去し、更に第２感光膜を塗
布する工程と、 前記のマスクを再度用いた露光工程と、現像工程で第２
感光膜パターンを形成する工程と、 露光した反射防止膜パターンをエッチングし、更に下部
層をエッチングして下部層パータンを形成する工程を含
み、希望する大きさの下部層パターンを得ることを特徴
とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device, comprising the steps of applying an antireflection film on the upper part of a lower layer to be patterned, and applying a first photosensitive film on the upper part of the antireflection film, and exposing using a mask. Process and developing process to form a first photosensitive film pattern, etching the exposed antireflection film to form an antireflection film pattern, removing the first photosensitive film pattern, and further removing the second photosensitive film In the process of applying the film, the exposure process using the mask again, and the developing process,
The method includes forming a photosensitive film pattern, etching the exposed antireflection film pattern, and then etching the lower layer to form a lower layer pattern, thereby obtaining a lower layer pattern having a desired size. Of manufacturing a semiconductor device.
あることを特徴とする請求項１記載の半導体装置の製造
方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein the antireflection film is a film having a high light absorption rate.
パターン化するため５０００Å程度に塗布することを特
徴とする請求項１記載の半導体装置の製造方法。3. The method of manufacturing a semiconductor device according to claim 1, wherein the thickness of the first photosensitive film is about 5000 Å for patterning the antireflection film.
Åの厚さで形成することを特徴とする請求項１記載の半
導体装置の製造方法。4. The antireflection film is 250 to 2000.
The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed with a thickness of Å.
レジストであることを特徴とする請求項１記載の半導体
装置の製造方法。5. The method of manufacturing a semiconductor device according to claim 1, wherein the first and second photosensitive films are positive resists.
ｉＮ膜であることを特徴とする請求項１記載の半導体装
置の製造方法。6. The antireflection film is a Si 3 N 4 film or a T film.
The method of manufacturing a semiconductor device according to claim 1, wherein the method is an iN film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93-27228 | 1993-12-10 | ||
| KR1019930027228A KR0119377B1 (en) | 1993-12-10 | 1993-12-10 | Fabrication method of semiconductor apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07273021A true JPH07273021A (en) | 1995-10-20 |
| JP2636763B2 JP2636763B2 (en) | 1997-07-30 |
Family
ID=19370553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6306430A Expired - Fee Related JP2636763B2 (en) | 1993-12-10 | 1994-12-09 | Method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5635335A (en) |
| JP (1) | JP2636763B2 (en) |
| KR (1) | KR0119377B1 (en) |
| CN (1) | CN1036102C (en) |
| DE (1) | DE4443957C2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2291207B (en) * | 1994-07-14 | 1998-03-25 | Hyundai Electronics Ind | Method for forming resist patterns |
| US5763327A (en) * | 1995-11-08 | 1998-06-09 | Advanced Micro Devices, Inc. | Integrated arc and polysilicon etching process |
| US6048745A (en) * | 1997-10-28 | 2000-04-11 | International Business Machines Corporation | Method for mapping scratches in an oxide film |
| JP3093720B2 (en) * | 1998-04-08 | 2000-10-03 | 松下電子工業株式会社 | Pattern formation method |
| US5920786A (en) * | 1998-04-15 | 1999-07-06 | Advanced Micro Devices | Method for fabricating shallow isolation trenches using angular photoresist profiles to create sloped isolation trench walls |
| US6524689B1 (en) | 1999-10-28 | 2003-02-25 | Quantum Corporation | Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby |
| CN101836089B (en) * | 2007-09-05 | 2013-06-05 | 株式会社尼康 | Reflector plate for optical encoder, method for producing the same, and optical encoder |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506441A (en) * | 1967-06-02 | 1970-04-14 | Rca Corp | Double photoresist processing |
| US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
| GB2117175A (en) * | 1982-03-17 | 1983-10-05 | Philips Electronic Associated | Semiconductor device and method of manufacture |
| JPS6265425A (en) * | 1985-09-18 | 1987-03-24 | Sony Corp | Manufacture of semiconductor device |
| US4820611A (en) * | 1987-04-24 | 1989-04-11 | Advanced Micro Devices, Inc. | Titanium nitride as an antireflection coating on highly reflective layers for photolithography |
| ATE123345T1 (en) * | 1989-01-23 | 1995-06-15 | Siemens Ag | METHOD FOR PRODUCING A SILICON NITRIDE LAYER AS USED AS AN ANTIREFLECTION LAYER IN PHOTOLITHOGRAPHY PROCESSES IN THE PRODUCTION OF HIGHLY INTEGRATED SEMICONDUCTOR CIRCUITS. |
| US5470693A (en) * | 1992-02-18 | 1995-11-28 | International Business Machines Corporation | Method of forming patterned polyimide films |
-
1993
- 1993-12-10 KR KR1019930027228A patent/KR0119377B1/en not_active IP Right Cessation
-
1994
- 1994-12-09 DE DE4443957A patent/DE4443957C2/en not_active Expired - Fee Related
- 1994-12-09 CN CN94118819A patent/CN1036102C/en not_active Expired - Fee Related
- 1994-12-09 JP JP6306430A patent/JP2636763B2/en not_active Expired - Fee Related
- 1994-12-12 US US08/353,921 patent/US5635335A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5635335A (en) | 1997-06-03 |
| DE4443957C2 (en) | 1997-08-28 |
| KR0119377B1 (en) | 1997-09-30 |
| CN1110005A (en) | 1995-10-11 |
| CN1036102C (en) | 1997-10-08 |
| JP2636763B2 (en) | 1997-07-30 |
| DE4443957A1 (en) | 1995-06-14 |
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