JPH07270470A - Matrix type selector circuit - Google Patents

Matrix type selector circuit

Info

Publication number
JPH07270470A
JPH07270470A JP6061718A JP6171894A JPH07270470A JP H07270470 A JPH07270470 A JP H07270470A JP 6061718 A JP6061718 A JP 6061718A JP 6171894 A JP6171894 A JP 6171894A JP H07270470 A JPH07270470 A JP H07270470A
Authority
JP
Japan
Prior art keywords
power supply
comparing
circuit
line
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6061718A
Other languages
Japanese (ja)
Other versions
JP3178569B2 (en
Inventor
Shigehiro Kobayashi
茂洋 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Fuji Facom Corp
Original Assignee
Fuji Electric Co Ltd
Fuji Facom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Facom Corp filed Critical Fuji Electric Co Ltd
Priority to JP06171894A priority Critical patent/JP3178569B2/en
Publication of JPH07270470A publication Critical patent/JPH07270470A/en
Application granted granted Critical
Publication of JP3178569B2 publication Critical patent/JP3178569B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

PURPOSE:To simplify the constitution of a matrix type selector circuit for reducing the number of parts, required space and cost, and detecting a diode to prevent the propagation of a shortcircuit error. CONSTITUTION:Regarding a matrix type selector circuit to select desired relay elements RY11 to RY22 through switch operation, the cathode side voltage of shortcircuit error propagation preventing diodes D11 to D22 connectable to the elements RY11 to RY22 is compared via comparators CP0 to CP3 connected to a direct current power supply E on the basis of a high and low reference voltage E01 and E02, and the result of the comparison is outputted. Then, a shortcircuit propagation preventing diode is detected on the basis of the output signal and the mode of relay element selection.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、通電によって作動状
態となる作動手段と回り込み防止用ダイオードとを複数
組み込んだマトリックス形選択回路であって、特に回り
込み防止用ダイオードの短絡異常を検出可能にするマト
リックス形選択回路に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix type selection circuit in which a plurality of actuating means which are activated by energization and a sneak prevention diode are incorporated, and in particular, a short circuit abnormality of the sneak prevention diode can be detected. The present invention relates to a matrix type selection circuit.

【0002】[0002]

【従来の技術】従来のマトリックス形選択回路の回路構
成図としては、例えば図2に示す構成を有するものが知
られている。同図において、回路部分Aには互いに交差
する第1電源ラインLV1,LV2及び第2電源ライン
LH1,LH2の交点近傍に、通電によって作動状態と
なる作動手段としての各リレー素子RY11a,RY2
1a,RY12a及びRY22aと、カソード側を第2
電源ラインLH1,LH2側とする各回り込み防止用ダ
イオードD11a,D21a,D12a及びD22aと
の直列回路が各第1電源ラインLV1及びLV2と各第
2電源ラインLH1及びLH2間に介挿されている。ま
た、前記第1電源ラインLV1及びLV2は選択用スイ
ッチ手段としての第1電源ライン選択スイッチS10及
びS20を介して個別に直流電源Eの正極側ラインPへ
接続され、前記第2電源ラインLH1及びLH2は選択
用スイッチ手段としての第2電源ライン選択スイッチS
01及びS02を介して個別に負極側ラインNへ接続さ
れて回路部分Aが構成されている。
2. Description of the Related Art As a circuit configuration diagram of a conventional matrix type selection circuit, for example, one having a configuration shown in FIG. 2 is known. In the figure, in the circuit portion A, each relay element RY11a, RY2 as an operating means that is activated by energization is provided in the vicinity of the intersection of the first power supply lines LV1, LV2 and the second power supply lines LH1, LH2 that intersect each other.
1a, RY12a and RY22a, and the cathode side is the second
A series circuit of sneak prevention diodes D11a, D21a, D12a and D22a on the power supply lines LH1 and LH2 side is inserted between the first power supply lines LV1 and LV2 and the second power supply lines LH1 and LH2. Further, the first power supply lines LV1 and LV2 are individually connected to the positive electrode side line P of the DC power supply E through the first power supply line selection switches S10 and S20 serving as selection switch means, and the second power supply lines LH1 and LH2 is a second power supply line selection switch S as selection switch means.
The circuit portion A is configured by being individually connected to the negative electrode side line N via 01 and S02.

【0003】また、前記正極側ラインPと負極側ライン
N間には、前記回路部分Aと同様な回路構成を有する回
路部分Bが前記回路部分Aと並列に接続されている。回
路部分Bの回路素子であるリレー素子RY11b,RY
21b,RY12b及びRY22bと回り込み防止用ダ
イオードD11b,D21b,D12b及びD22b
は、前記回路部分Aのリレー素子RY11a,RY21
a,RY12a及びRY22aと回り込み防止用ダイオ
ードD11a,D21a,D12a及びD22aに対応
しており、第1電源ライン選択スイッチS10,S20
と第2電源ライン選択スイッチS01,S02とは回路
部分Aと回路部分Bとで連動している。
A circuit portion B having the same circuit configuration as the circuit portion A is connected in parallel with the circuit portion A between the positive electrode side line P and the negative electrode side line N. Relay elements RY11b and RY which are circuit elements of the circuit portion B
21b, RY12b and RY22b, and sneak prevention diodes D11b, D21b, D12b and D22b.
Is the relay elements RY11a and RY21 of the circuit part A.
a, RY12a and RY22a and sneak-prevention diodes D11a, D21a, D12a and D22a, which correspond to the first power supply line selection switches S10 and S20.
And the second power supply line selection switches S01 and S02 are linked in the circuit portion A and the circuit portion B.

【0004】つまり、従来のマトリックス形選択回路
は、同じ回路構成を有する回路部分Aと回路部分Bとの
2重の構成となっており、第1電源ライン選択スイッチ
S10,S20と第2電源ライン選択スイッチS01,
S02で、回路部分Aと回路部分Bとの各1対のリレー
素子RY11aとRY11b,RY21aとRY21
b,RY12aとRY12b,RY22aとRY22b
の何れかを選択して通電し動作させるよう構成されてい
る。
That is, the conventional matrix type selection circuit has a dual structure of the circuit portion A and the circuit portion B having the same circuit configuration, and the first power source line selection switches S10 and S20 and the second power source line are provided. Select switch S01,
At S02, each pair of relay elements RY11a and RY11b of circuit portion A and circuit portion B, RY21a and RY21, respectively.
b, RY12a and RY12b, RY22a and RY22b
It is configured so that any one of the above is selected and energized to operate.

【0005】また、前記従来のマトリックス形選択回路
には、リレー素子RY11a,RY21a,RY12
a,RY22a,RY11b,RY21b,RY12b
及びRY22bの作動状態を検出する接点r11a,r
12a,r21a,r22a,r11b,r21b,r
12b,r22bを含んで構成される動作異常検出回路
1が接続されている。この動作異常検出回路1は、直流
電源E1 の正極側ラインP1 と負極側ラインN1 間に、
各接点r11a,r21a,r12a及びr22aと、
接点r11b,r21b,r12b及びr22bと、チ
ェック装置CH1,CH2,CH3及びCH4とを直列
に接続した直列回路が並列に接続されている。前記各チ
ェック装置CH1,CH2,CH3,CH4は各接点r
11a,r12a,r21a及びr22aと接点r11
b,r12b,r21b及びr22bとの1対同士が共
にオンしたときのみ動作するよう構成されている。
Further, the conventional matrix type selection circuit includes relay elements RY11a, RY21a, RY12.
a, RY22a, RY11b, RY21b, RY12b
And contacts r11a, r for detecting the operating state of RY22b
12a, r21a, r22a, r11b, r21b, r
The operation abnormality detection circuit 1 including 12b and r22b is connected. The operation abnormality detecting circuit 1 is provided between the positive electrode side line P 1 and the negative electrode side line N 1 of the DC power source E 1 .
Each contact point r11a, r21a, r12a and r22a,
A series circuit in which the contacts r11b, r21b, r12b and r22b and the check devices CH1, CH2, CH3 and CH4 are connected in series is connected in parallel. Each of the check devices CH1, CH2, CH3, CH4 has a contact point r.
11a, r12a, r21a and r22a and contact point r11
It is configured to operate only when a pair of b, r12b, r21b, and r22b are both turned on.

【0006】上記構成の従来例では、マトリックス形選
択回路が回路部分Aと回路部分Bとの2重の構成となっ
ており、両回路部分A、Bの同じ部分の回路素子が同時
に故障する確率は非常に小さいとの判断のもとに両回路
部分A,Bが同様な回路動作をすれば、両回路部分A,
Bの各回路素子は正常に動作しており、両回路部分A,
Bが異なる動作をすれば、回路に異常があるとみなして
いる。
In the conventional example having the above-mentioned configuration, the matrix type selection circuit has a dual configuration of the circuit portion A and the circuit portion B, and the probability that the circuit elements in the same portion of both circuit portions A and B will simultaneously fail. If both circuit parts A and B perform the same circuit operation based on the judgment that is very small, both circuit parts A and B
Each circuit element of B is operating normally, and both circuit parts A,
If B operates differently, it is considered that the circuit is abnormal.

【0007】また、リレー素子RY11a,RY21
a,RY12a,RY22a,RY11b,RY21
b,RY12b,RY22bの動作状態は、チェック装
置CH1,CH2,CH3,CH4によって検出してい
る。例えば,1対のリレー素子RY11aとRY11b
を選択したとき、チェック装置CH1が動作すれば、接
点r11aと接点r11bが共にオン状態であることが
検出され、1対のリレー素子RY11aとRY11bが
共に選択され、正常に動作していることが検出される。
Further, the relay elements RY11a, RY21
a, RY12a, RY22a, RY11b, RY21
The operating states of b, RY12b and RY22b are detected by the check devices CH1, CH2, CH3 and CH4. For example, a pair of relay elements RY11a and RY11b
If the check device CH1 operates when is selected, it is detected that both the contact r11a and the contact r11b are in the ON state, and the pair of relay elements RY11a and RY11b are both selected and are operating normally. To be detected.

【0008】一方、リレー素子RY11aとRY11b
を選択してチェック装置CH1が動作しない場合には、
リレー素子RY11aとRY11bの一方,または両方
に動作異常があることが検出される。
On the other hand, relay elements RY11a and RY11b
Is selected and the check device CH1 does not operate,
It is detected that one or both of the relay elements RY11a and RY11b has a malfunction.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記従
来のマトリックス形選択回路においては、回路構成を回
路部分Aと回路部分Bとの2重の構成にしているので、
回路素子の部品点数を多数必要とし、所要スペースも大
きくなり、高コストとなるという未解決の課題がある。
However, in the above-mentioned conventional matrix type selection circuit, since the circuit configuration has the dual configuration of the circuit portion A and the circuit portion B,
There is an unsolved problem that a large number of parts of circuit elements are required, a required space becomes large, and the cost becomes high.

【0010】また、回路部分Aと回路部分Bが異なる回
路動作をしたとき、回路の異常が検出されるが、このと
き回り込み防止用ダイオードの短絡異常によるものなの
か、他の原因によるものなのか判断できずメンテナンス
作業が困難となるという未解決の課題がある。さらに、
動作異常検出回路1のチェック装置CH1,CH2,C
H3,CH4により回路部分Aと回路部分Bの1対のリ
レー素子のうちの一方,または両方の動作異常が検出さ
れるが、どのリレー素子が異常であるか特定できないと
いう未解決の課題もある。
Further, when the circuit operation is different between the circuit portion A and the circuit portion B, a circuit abnormality is detected. At this time, is it due to a short circuit abnormality of the sneak-in prevention diode or another cause? There is an unsolved problem that it is difficult to judge and maintenance work becomes difficult. further,
Check device CH1, CH2, C of the operation abnormality detection circuit 1
An abnormal operation of one or both of the pair of relay elements of the circuit portion A and the circuit portion B is detected by H3 and CH4, but there is an unsolved problem that which relay element is abnormal cannot be specified. .

【0011】そこで、この発明は、上記未解決の課題に
着目してなされたものであり、回路構成を簡易にするこ
とによって回路素子の部品点数を少なく、所要スペース
も小さくして、低コスト化を達成し、回り込み防止用ダ
イオードの短絡異常と、動作異常のあるリレー素子等の
作動手段を検出できるマトリックス形選択回路を提供す
ることを目的としている。
Therefore, the present invention has been made in view of the above-mentioned unsolved problems, and by simplifying the circuit structure, the number of parts of circuit elements is reduced, the required space is reduced, and the cost is reduced. It is an object of the present invention to provide a matrix type selection circuit capable of detecting a short circuit abnormality of a sneak-in prevention diode and an operating means such as a relay element having an operation abnormality.

【0012】[0012]

【課題を解決するための手段】上記目的を達成するため
に、請求項1に係わるマトリックス形選択回路は、直流
電源の正極側ライン及び負極側ラインに個別に接続さ
れ、互いに交差するよう配設された複数の第1電源ライ
ン及び第2電源ラインと、両電源ラインの交点近傍で当
該第1電源ライン及び第2電源ライン間に介挿された通
電によって作動状態となる作動手段及びカソード側を第
2電源ライン側とする回り込み防止用ダイオードの直列
回路と、前記正極側ライン及び負極側ラインと各第1電
源ライン及び第2電源ラインとの接続部に配設された選
択用スイッチ手段とを備えたマトリックス形選択回路に
おいて、前記各第2電源ラインの電圧を高電位の基準電
圧と比較する第1の比較手段と、前記各第2電源ライン
の電圧を低電位の基準電圧と比較する第2の比較手段
と、前記第1の比較手段と第2の比較手段からの比較出
力と前記選択スイッチの選択状態とに基づいて前記回り
込み防止用ダイオードの短絡異常を検出する異常箇所検
出手段とを備えたことを特徴とする。
In order to achieve the above object, a matrix type selection circuit according to a first aspect of the invention is individually connected to a positive side line and a negative side line of a DC power source and arranged so as to intersect each other. A plurality of first power source lines and second power source lines, and an actuating means and a cathode side which are activated in the vicinity of the intersection of the two power source lines by the energization interposed between the first power source line and the second power source line. A series circuit of sneak prevention diodes on the side of the second power supply line, and a selection switch means arranged at a connection portion between the positive and negative side lines and the respective first and second power supply lines. In the provided matrix type selection circuit, first comparing means for comparing the voltage of each of the second power supply lines with a high-potential reference voltage, and the voltage of each of the second power supply lines is of a low-potential basis. Abnormality for detecting a short circuit abnormality of the sneak prevention diode based on second comparing means for comparing with a voltage, comparison outputs from the first comparing means and the second comparing means, and a selection state of the selection switch. And a location detecting means.

【0013】また、請求項2に係わるマトリックス形選
択回路は、前記直流電源に接続された前記各作動手段の
作動状態に個別に応動するスイッチング素子と付加抵抗
との直列回路を並列に接続した動作検出回路と基抵抗と
の直列回路と、該直列回路の動作検出回路及び基抵抗の
接続部点における動作電圧を低電位の基準電圧と比較す
る第3の比較手段と、前記動作電圧を中電位の基準電圧
と比較する第4の比較手段と、前記動作電圧を高電位の
基準電圧と比較する第5の比較手段と、前記第3の比較
手段、第4の比較手段及び第5の比較手段からの比較出
力と前記選択スイッチの選択状態とに基づいて前記作動
手段の選択動作異常状態を検出する動作異常検出手段を
備えたことも特徴としている。
The matrix type selection circuit according to a second aspect of the present invention is an operation in which a series circuit of a switching element and an additional resistor, which individually respond to the operating state of each of the operating means connected to the DC power source, is connected in parallel. A series circuit of a detection circuit and a base resistance; a third comparison means for comparing an operating voltage at a connection point of the operation detection circuit and the base resistance of the series circuit with a low-potential reference voltage; Fourth comparing means for comparing the operating voltage with a high-potential reference voltage, the third comparing means, the fourth comparing means, and the fifth comparing means. It is also characterized in that an operation abnormality detecting means for detecting an abnormal operation state of the selective operation of the actuating means is provided on the basis of the comparison output from and the selected state of the selection switch.

【0014】さらに、請求項3に係わるマトリックス形
選択回路は、前記各第2電源ラインの電圧を高電位の基
準電圧と比較する第1の比較手段と、前記各第2電源ラ
インの電圧を低電位の基準電圧と比較する第2の比較手
段と、前記第1の比較手段と第2の比較手段からの比較
出力と前記選択スイッチの選択状態とに基づいて前記回
り込み防止用ダイオードの短絡異常を検出する異常箇所
検出手段とを備え、さらに前記直流電源に接続された前
記各作動手段の作動状態に個別に応動するスイッチング
素子と付加抵抗との直列回路を並列に接続した動作検出
回路と基抵抗との直列回路と、該直列回路の動作検出回
路及び基抵抗の接続部点における動作電圧を低電位の基
準電圧と比較する第3の比較手段と、前記動作電圧を中
電位の基準電圧と比較する第4の比較手段と、前記動作
電圧を高電位の基準電圧と比較する第5の比較手段と、
前記第3の比較手段、第4の比較手段及び第5の比較手
段からの比較出力と前記選択スイッチの選択状態とに基
づいて前記作動手段の選択動作異常状態を検出する動作
異常検出手段を備えたことも特徴としている。
Further, in the matrix type selection circuit according to a third aspect of the present invention, the first comparing means for comparing the voltage of each of the second power supply lines with the high-potential reference voltage and the voltage of each of the second power supply lines are low. A short circuit abnormality of the sneak prevention diode is detected based on a second comparing means for comparing with a reference voltage of a potential, a comparison output from the first comparing means and the second comparing means, and a selection state of the selection switch. An operation detecting circuit and a base resistance which are connected in parallel with a series circuit of a switching element and an additional resistor, which are provided with an abnormal point detecting means for detecting, and which further respond individually to the operating state of each operating means connected to the DC power supply. And a third comparison means for comparing the operating voltage at the connection point of the operation detection circuit and the base resistor of the series circuit with a low-potential reference voltage, and the operating voltage as a medium-potential reference voltage. A fourth comparison means for compare, a fifth comparison means for comparing the operating voltage and the reference voltage of the high potential,
An operation abnormality detecting means for detecting an abnormal operation state of the selection operation of the actuating means based on the comparison outputs from the third comparing means, the fourth comparing means and the fifth comparing means and the selection state of the selection switch is provided. It is also characterized.

【0015】[0015]

【作用】請求項1に係わるマトリックス形選択回路にお
いては、選択スイッチの操作により選択した所望の作動
手段が介挿されている第1電源ラインと第2電源ライン
とは異なる第1電源ラインと第2電源ライン間に介挿さ
れる回り込み防止用ダイオードに短絡異常がなければ、
所望の作動手段のみが動作するが、前記回り込み防止用
ダイオードに短絡異常があると、この回り込み防止用ダ
イオードに接続される作動手段も動作するため、前記回
り込み防止用ダイオードに短絡異常がないときに比較し
て第2電源ラインの電圧は変化する。この前記第2電源
ラインの電圧変化を高電位及び低電位の基準電圧と比較
する第1及び第2の比較手段で検出し、これら比較出力
とスイッチ状態から異常箇所検出手段で異常となった回
り込み防止用ダイオードを特定する。
In the matrix type selection circuit according to the first aspect, the first power source line and the second power source line different from the first power source line and the second power source line in which desired operation means selected by operating the selection switch are inserted. If there is no short circuit abnormality in the sneak prevention diode inserted between the two power supply lines,
Although only the desired actuating means operates, if there is a short circuit abnormality in the sneak prevention diode, the operating means connected to this sneak prevention diode also operates, so when there is no short circuit abnormality in the sneak prevention diode. In comparison, the voltage of the second power supply line changes. The voltage change of the second power supply line is detected by the first and second comparing means for comparing with the reference voltage of the high potential and the low potential, and the wraparound which is abnormal by the abnormal portion detecting means from the comparison output and the switch state. Identify the prevention diode.

【0016】また、請求項2に係わるマトリックス形選
択回路においては、選択した作動手段が正常であればそ
の作動状態に応動してスイッチング素子がオンとなるた
め、動作検出回路においてこのスイッチング素子を含む
直列回路だけが導通する。一方、選択した作動手段が異
常であれば、そのスイッチング素子はオンしないため、
動作検出回路に電流が流れることはなくなり、作動手段
が正常である場合とは動作検出回路及び基抵抗との接続
部点での動作電圧は異なる。この動作電圧の変化を低電
位、中電位及び高電位の基準電圧と比較する第3、第4
及び第5の比較手段で検出し、動作異常検出手段にてこ
れら比較出力とスイッチ状態から作動手段の異常の有無
を検出する。
Further, in the matrix type selection circuit according to the second aspect, if the selected operating means is normal, the switching element is turned on in response to the operating state thereof, so that the operation detecting circuit includes this switching element. Only the series circuit is conducting. On the other hand, if the selected actuation means is abnormal, the switching element will not turn on,
No current flows through the operation detection circuit, and the operation voltage at the connection point between the operation detection circuit and the base resistance is different from that when the operating means is normal. Third and fourth comparisons of this change in operating voltage with reference voltages of low potential, medium potential and high potential
Then, the fifth comparing means detects the abnormality, and the operation abnormality detecting means detects the presence or absence of abnormality of the operating means from the comparison output and the switch state.

【0017】さらに請求項3に係わるマトリックス形選
択回路におけるように、第1〜第5の比較手段と異常箇
所検出手段及び動作異常検出手段を設けたものにあって
は、上記のように異常箇所検出手段にて異常となった回
り込み防止用ダイオードが特定され、動作異常検出手段
にて作動手段の異常の有無が検出される。
Further, as in the matrix type selection circuit according to the third aspect, in the case where the first to fifth comparing means, the abnormal portion detecting means and the operation abnormality detecting means are provided, the abnormal portion is as described above. The detection means identifies the sneak-in prevention diode that has become abnormal, and the operation abnormality detection means detects whether or not there is an abnormality in the operation means.

【0018】[0018]

【実施例】以下、この発明の実施例を図面に基づいて説
明する。図1は、本発明の一実施例を示す回路構成図で
ある。同図において、互いに交差するよう配設された第
1電源ラインLV1,LV2と第2電源ラインLH1,
LH2との交点近傍には、通電によって作動状態となる
作動手段としてのリレー素子RY11,RY21,RY
12及びRY22と該リレー素子RY11,RY21,
RY12及びRY22への回り込み電流を防止する回り
込み防止用ダイオードD11,D21,D12及びD2
2との直列回路が、前記回り込み防止用ダイオードのカ
ソード側を第2電源ライン側に向けて前記両電源ライン
を連結するよう介挿されている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit configuration diagram showing an embodiment of the present invention. In the figure, first power supply lines LV1 and LV2 and second power supply lines LH1, which are arranged so as to intersect with each other.
In the vicinity of the intersection with LH2, relay elements RY11, RY21, RY as actuating means that are activated by energization.
12 and RY22 and the relay elements RY11, RY21,
Leakage prevention diodes D11, D21, D12 and D2 for preventing the sneak current to RY12 and RY22.
A series circuit with 2 is inserted so that the cathode side of the sneak-in prevention diode faces the second power source line and connects the both power source lines.

【0019】前記第1電源ラインLV1及びLV2の一
端側は、直流電源Eの正極側ラインPに個別に接続さ
れ、この接続部には選択用スイッチ手段としての第1電
源ライン選択スイッチS10及びS20が介挿されてい
る。前記第2電源ラインLH1,LH22の一端側は、
直流電源Eの負極側ラインNに個別に接続され、この接
続部には選択用スイッチ手段としての第2電源ライン選
択スイッチS01及びS02が介挿されている。
One end sides of the first power source lines LV1 and LV2 are individually connected to the positive electrode side line P of the DC power source E, and the first power source line selection switches S10 and S20 as selection switch means are connected to this connection portion. Has been inserted. One end sides of the second power supply lines LH1 and LH22 are
Second power supply line selection switches S01 and S02 as selection switch means are individually connected to the negative electrode side line N of the DC power supply E.

【0020】つまり、第1電源ライン選択スイッチS1
0,S20と第2電源ライン選択スイッチS01,S0
2との選択操作により、所望のリレー素子RY11,R
Y21,RY12,RY22を選択して動作させるマト
リックス形選択回路が構成されている。前記第2電源ラ
インLH1,LH2の他端側は、ダイオード異常箇所検
出回路1に接続されている。ダイオード異常箇所検出回
路1は、第2電源ラインLH1及びLH2と正極側ライ
ンPとの間に介挿された抵抗R1及びR2と、正極側ラ
インPと負極側ラインNとの間に接続されて高電位の基
準電圧E01を作る分圧抵抗R3,R5と、正極側ライン
Pと負極側ラインNとの間に接続されて低電位の基準電
圧E02を作る分圧抵抗R4,R6と、第2電源ラインL
H1,LH2の電圧を分圧抵抗R3,R5で形成される
高電位の基準電圧E01と比較する第1の比較手段として
のコンパレータCP0,CP2と、第2電源ラインLH
1,LH2の電圧を分圧抵抗R4,R6で形成される低
電位の基準電圧E02と比較する第2の比較手段としての
コンパレータCP1,CP3と、前記第1電源ライン選
択スイッチS10、S20と第2電源ライン選択スイッ
チS01、S02の選択状態と前記コンパレータCP
0、CP1、CP2及びCP3からの比較出力S0,S
1,S2及びS3とに基づいて短絡異常の回り込み防止
用ダイオードの接続箇所を検出する異常箇所検出手段と
しての異常箇所検出回路2とを有して構成されている。
That is, the first power supply line selection switch S1
0, S20 and second power supply line selection switches S01, S0
The desired relay elements RY11, R can be selected by selecting 2
A matrix type selection circuit for selecting and operating Y21, RY12, and RY22 is configured. The other end sides of the second power supply lines LH1 and LH2 are connected to the diode abnormality location detection circuit 1. The diode abnormality location detection circuit 1 is connected between the resistors R1 and R2 interposed between the second power supply lines LH1 and LH2 and the positive electrode side line P, and the positive electrode side line P and the negative electrode side line N. Voltage dividing resistors R3 and R5 for producing a high potential reference voltage E 01, and voltage dividing resistors R4, R6 connected between the positive electrode side line P and the negative electrode side line N for producing a low potential reference voltage E 02 , Second power line L
Comparators CP0 and CP2 as first comparing means for comparing the voltages of H1 and LH2 with the high-potential reference voltage E 01 formed by the voltage dividing resistors R3 and R5, and the second power supply line LH.
Comparators CP1 and CP3 as second comparing means for comparing the voltages of L1 and LH2 with the low-potential reference voltage E 02 formed by the voltage dividing resistors R4 and R6; and the first power supply line selection switches S10 and S20. Selection states of the second power supply line selection switches S01 and S02 and the comparator CP
0, CP1, CP2 and CP3 comparison outputs S0, S
1, S2 and S3, and an abnormal part detecting circuit 2 as an abnormal part detecting means for detecting a connection part of a diode for preventing a short circuit abnormality from flowing around.

【0021】ここで、高電位の基準電圧E01は所定の回
り込み防止用ダイオードに短絡異常があって、この回り
込み防止用ダイオードのカソード側が接続されている第
2電源ラインにも電流が流れるときの第2電源ラインの
電圧よりも大きく、直流電源Eの電圧よりも小さい値に
設定されている。具体的には、本実施例では、直流電源
電圧を5V、各リレー素子RY11,RY21,RY1
2,RY22のコイル抵抗値はすべて等しいものとして
おり、基準電圧E01が3.3 V<E01<5Vの高電位とな
るよう抵抗R3,R5の各抵抗値が設定され、基準電圧
02がが0V<E02<1Vの低電位となるよう抵抗R
4、R6の抵抗値が設定されている。また、抵抗R1,
R2の値は、第2電源ライン選択スイッチS01または
S02をオンにしたとき、回り込み防止用ダイオードD
11,D21,D12,D22の少なくとも1個に短絡
異常があってもリレー素子RY11,RY21,RY1
2,RY22が動作しないよう各抵抗値を10kΩ(キ
ロオーム)という大きな抵抗値に設定されている。
Here, when the high-potential reference voltage E 01 has a short circuit abnormality in a predetermined sneak-in prevention diode and a current also flows in the second power supply line to which the cathode side of the sneak-in prevention diode is connected. It is set to a value higher than the voltage of the second power supply line and lower than the voltage of the DC power supply E. Specifically, in this embodiment, the DC power supply voltage is 5 V, and each relay element RY11, RY21, RY1
2, the coil resistance values of RY22 are all equal, the resistance values of the resistors R3 and R5 are set so that the reference voltage E 01 has a high potential of 3.3 V <E 01 <5 V, and the reference voltage E 02 is Resistor R is set so that the potential is as low as 0V <E 02 <1V.
The resistance values of R4 and R6 are set. In addition, the resistance R1,
When the second power supply line selection switch S01 or S02 is turned on, the value of R2 is the sneak prevention diode D.
Even if at least one of 11, D21, D12, D22 has a short circuit abnormality, relay elements RY11, RY21, RY1
2, each resistance value is set to a large resistance value of 10 kΩ (kilo ohm) so that RY22 does not operate.

【0022】一方、コンパレータCP0及びCP2は、
第2電源ラインLH1と抵抗R1との接続部P1におけ
る電圧VP1及び第2電源ラインLH2と抵抗R2との
接続部P2における電圧VP2を、基準電圧E01と比較
してVP1≧E01及びVP2≧E01となるとき論理値
“1”を、VP1<E01及びVP2<E01となるとき論
理値“0”の比較出力S0及びS2を出力し、コンパレ
ータCP1及びCP3は、電圧VP1及び電圧VP2
を、基準電圧E02と比較してVP1≦E02及びVP2≦
02となるとき論理値“1”を、また、VP1>E02
びVP2>E02となるとき論理値“0”の比較出力S1
及びS3を出力するよう構成されている。
On the other hand, the comparators CP0 and CP2 are
The voltage VP1 at the connection P1 between the second power supply line LH1 and the resistor R1 and the voltage VP2 at the connection P2 between the second power supply line LH2 and the resistance R2 are compared with the reference voltage E 01, and VP1 ≧ E 01 and VP2 ≧ When E 01 , the logical value “1” is output, and when VP1 <E 01 and VP2 <E 01 , the comparison outputs S0 and S2 having the logical value “0” are output. The comparators CP1 and CP3 output the voltage VP1 and the voltage VP2.
Compared with the reference voltage E 02 , VP1 ≦ E 02 and VP2 ≦
The logical value "1" when the E 02, also comparing the output of logic value "0" when the VP1> E 02 and VP2> E 02 S1
And S3 are output.

【0023】また、前記異常箇所検出回路2には第1と
第2電源ライン選択スイッチS10,S20,S01,
S02に連動するスイッチ接点r11,r21,r12
及びr22が接続されている。異常箇所検出回路2は、
前記比較出力S0,S1,S2,S3と、スイッチ接点
S10a,S20a,S01a,S02aからの出力を
利用して短絡異常の回り込み防止用ダイオードを特定す
る構成になっている。
In addition, the abnormal point detection circuit 2 includes first and second power supply line selection switches S10, S20, S01,
Switch contacts r11, r21, r12 that interlock with S02
And r22 are connected. The abnormal point detection circuit 2
The comparison output S0, S1, S2, S3 and the outputs from the switch contacts S10a, S20a, S01a, S02a are used to identify the short-circuiting abnormality preventive diode.

【0024】例えば、第1電源ライン選択スイッチS1
0と第2電源ライン選択スイッチS01とをオンにして
リレー素子RY11を動作させたとき、リレー素子RY
11が接続されない第1電源ラインLV2と第2電源ラ
インLH2間に介挿されている回り込み防止用ダイオー
ドD22に短絡異常がなければ、電流は第1電源ライン
選択スイッチS10を経てリレー素子RY11と回り込
み防止用ダイオードD11を通り、第2電源ライン選択
スイッチS01を経て流れる。したがって、第2電源ラ
インLH1と抵抗R1との接続部P1での電圧VP1は
0Vになり、第2電源ラインLH2と抵抗R2との接続
部P2での電圧VP2は電圧は5Vとなる。次いで、ダ
イオード異常箇所検出回路1において、前記電圧VP1
と電圧VP2がコンパレータCP0,CP2にて高電位
の基準電圧E01と、コンパレータCP1,CP3にて低
電位の基準電圧E02と比較され、コンパレータCP0,
CP1,CP2及びCP3からの比較出力S0,S1,
S2及びS3は夫々論理値“0”,“1”,“1”及び
“0”となる。
For example, the first power supply line selection switch S1
0 and the second power supply line selection switch S01 are turned on to operate the relay element RY11, the relay element RY
If there is no short-circuit abnormality in the sneak-prevention diode D22 inserted between the first power supply line LV2 and the second power supply line LH2 to which 11 is not connected, the current spills through the first power supply line selection switch S10 and the relay element RY11. It flows through the protection diode D11 and the second power supply line selection switch S01. Therefore, the voltage VP1 at the connecting portion P1 between the second power supply line LH1 and the resistor R1 becomes 0V, and the voltage VP2 at the connecting portion P2 between the second power supply line LH2 and the resistor R2 becomes 5V. Next, in the diode abnormality location detection circuit 1, the voltage VP1
And the voltage VP2 are compared with the high-potential reference voltage E 01 by the comparators CP0 and CP2 and the low-potential reference voltage E 02 by the comparators CP1 and CP3.
Comparative outputs S0, S1, from CP1, CP2 and CP3
S2 and S3 have logical values "0", "1", "1" and "0", respectively.

【0025】また,前記回り込み防止用ダイオードD2
2に短絡異常があれば、電流は上記経路を通って流れる
他に、図中の点線で示すように電流はリレー素子RY1
2、回り込み防止用ダイオードD12、回り込み防止用
ダイオードD22、リレー素子RY22、リレー素子R
Y21、回り込み防止用ダイオードD21の順にも流れ
る。したがって、電圧VP1は0Vのままであるが、電
圧VP2は5V×2/3≒3.3 Vに変化する。そして、
各比較出力S0,S1,S2及びS3は夫々論理値
“0”,“1”,“0”及び“0”となる。
Further, the sneak prevention diode D2
If there is a short circuit abnormality in 2, the current will flow through the above path, and the current will flow through the relay element RY1 as indicated by the dotted line in the figure.
2, sneak-prevention diode D12, sneak-prevention diode D22, relay element RY22, relay element R
Y21 and sneak-prevention diode D21 also flow in this order. Therefore, the voltage VP1 remains 0V, but the voltage VP2 changes to 5V × 2 / 3≈3.3V. And
The comparison outputs S0, S1, S2 and S3 have logical values "0", "1", "0" and "0", respectively.

【0026】以下同様にして、第1電源ライン選択スイ
ッチS10、S20と第2電源ライン選択スイッチS0
1、S02とを選択操作して所望のリレー素子を動作さ
せたとき、該リレー素子が接続されない第1電源ライン
LV1またはLV2、第2電源ラインLH1またはLH
2に接続される回り込み防止用ダイオードの短絡異常の
有無により、各第2電源ラインLH1及びLH2の抵抗
R1及びR2との接続部P1及びP2での電圧VP1,
VP2が変化し、当然比較出力S0,S1,S2,S3
も変化する。前記回り込み防止用ダイオードに短絡異常
がなく正常である場合には、表1に示すような比較出力
が得られ、該回り込み防止用ダイオードに短絡異常があ
れば、表2に示すような比較出力が得られる。
Similarly, the first power supply line selection switches S10 and S20 and the second power supply line selection switch S0 are similarly processed.
When the desired relay element is operated by selecting 1 and S02, the first power source line LV1 or LV2, the second power source line LH1 or LH to which the relay element is not connected
Depending on the presence or absence of a short circuit abnormality of the sneak-in prevention diode connected to No. 2, the voltage VP1 at the connection points P1 and P2 with the resistors R1 and R2 of the second power supply lines LH1 and LH2, respectively.
VP2 changes, and naturally the comparison outputs S0, S1, S2, S3
Also changes. When the sneak-in prevention diode is normal with no short-circuit abnormality, a comparison output as shown in Table 1 is obtained, and when there is a short-circuit abnormality in the sneak-prevention diode, a comparison output as shown in Table 2 is obtained. can get.

【0027】[0027]

【表1】 [Table 1]

【0028】[0028]

【表2】 [Table 2]

【0029】そこで、例えば、第1及び第2電源ライン
選択スイッチS20及びS01を選択してリレー素子R
Y21を動作させたとき比較出力S1とS2の論理値が
共に“1”であり、比較出力S0とS3の論理値が共に
“0”であれば、表1の番号2に相応するものとして回
り込み防止用ダイオードD12は短絡異常がなく正常で
あると検出し、一方、同様にリレー素子RY21を動作
させたとき比較出力S1のみの論理値が“1”であり、
比較出力S0,S2,S3の論理値が全て“0”であれ
ば、表2の番号2に相応するものとして回り込み防止用
ダイオードD12の短絡異常を検出するよう異常箇所検
出回路2は構成されている。
Therefore, for example, the relay element R is selected by selecting the first and second power supply line selection switches S20 and S01.
When Y21 is operated, the comparison outputs S1 and S2 both have a logical value of "1" and the comparison outputs S0 and S3 have a logical value of "0". The prevention diode D12 detects that there is no short circuit abnormality and is normal, and when the relay element RY21 is similarly operated, the logical value of only the comparison output S1 is "1",
If all the logical values of the comparison outputs S0, S2, S3 are "0", the abnormal point detection circuit 2 is configured to detect the short circuit abnormality of the sneak-in prevention diode D12 as corresponding to No. 2 in Table 2. There is.

【0030】一方,本実施例のマトリックス形選択回路
には、リレー素子RY11,RY21,RY12及びR
Y22の作動状態に応動するスイッチング素子としての
接点r11,r21,r12及びr22を含んで構成さ
れるリレー動作異常検出回路3が接続されている。この
リレー動作異常検出回路3は、直流電源。E1 の正極側
ラインP1 と負極側ラインN1 との間に接続される動作
検出回路PAと基抵抗R8との直列回路と、正極側ライ
ンP1 と負極側ラインN1 との間に接続されて低電位の
基準電圧E03を作る分圧抵抗R11,R14と、正極側
ラインP1 と負極側ラインN1 との間に接続されて中電
位の基準電圧E04を作る分圧抵抗R12,R15と、正
極側ラインP1 と負極側ラインN1 との間に接続されて
高電位の基準電圧E05を作る分圧抵抗R13,R16
と、動作検出回路PAと基抵抗R8との接続部点P5の
動作電圧VP5を分圧抵抗R11,R14で形成される
低電位の基準電圧E03と比較する第3の比較手段として
のコンパレータCP4と、前記動作電圧VP5を分圧抵
抗R12,R15で形成される中電位の基準電圧E04
比較する第4の比較手段としてのコンパレータCP5
と、前記動作電圧VP5を分圧抵抗R13,R16で形
成される高電位の基準電圧E05と比較する第5の比較手
段としてのコンパレータCP6と、前記第1電源ライン
選択スイッチS10、S20と第2電源ライン選択スイ
ッチS01、S02の選択状態と前記コンパレータCP
4、CP5及びCP6からの比較出力S4,S5及びS
6とに基づいて動作異常のリレー素子を検出する動作異
常検出手段としての異常検出回路4とを有して構成され
ている。
On the other hand, in the matrix type selection circuit of this embodiment, relay elements RY11, RY21, RY12 and R are provided.
A relay operation abnormality detection circuit 3 including contacts r11, r21, r12 and r22 as switching elements which respond to the operating state of Y22 is connected. This relay operation abnormality detection circuit 3 is a DC power supply. A series circuit of a motion detection circuit PA and groups resistor R8 connected between the positive side line P 1 of E 1 and the negative electrode side line N 1, between the positive electrode side line P 1 and the negative electrode side line N 1 Voltage dividing resistors R11 and R14 that are connected to generate a low potential reference voltage E 03 and a voltage dividing resistor that is connected between the positive electrode side line P 1 and the negative electrode side line N 1 to generate a medium potential reference voltage E 04. R12, R15 and dividing resistors making reference voltage E 05 of the connected high voltage between the positive electrode side line P 1 and the negative electrode side line N 1 R13, R16
And a comparator CP4 as a third comparison means for comparing the operating voltage VP5 at the connection point P5 between the operation detection circuit PA and the base resistor R8 with the low-potential reference voltage E 03 formed by the voltage dividing resistors R11 and R14. And a comparator CP5 as a fourth comparison means for comparing the operating voltage VP5 with a reference voltage E 04 having a medium potential formed by the voltage dividing resistors R12 and R15.
And a comparator CP6 as fifth comparing means for comparing the operating voltage VP5 with a high-potential reference voltage E 05 formed by the voltage dividing resistors R13 and R16, the first power supply line selection switches S10 and S20, and 2 Selection states of power supply line selection switches S01 and S02 and the comparator CP
4, comparison outputs S4, S5 and S from CP5 and CP6
6 and an abnormality detecting circuit 4 as an operation abnormality detecting means for detecting a relay element having an operation abnormality.

【0031】ここで、動作検出回路PAは一端が正極側
ラインP1 に並列に接続された各接点r11,r21,
r12及びr22の他端に付加抵抗R17,R18,R
19及びR20を直列に接続し、付加抵抗R17〜R2
0の他端を互いに接続した構成を有する。また、コンパ
レータCP4,CP5及びCP6は、動作電圧VP5を
基準電圧E03,E04及びE05と比較してVP5≦E03
VP5≧E04及びVP5≧E05となるとき論理値“1”
の比較出力S4,S5及びS6を、また、VP5>
03,VP5<E04及びVP5<E05となるとき論理値
“0”の比較出力S4,S5及びS6を出力するよう構
成されている。
Here, the operation detection circuit PA has contacts one of the contacts r11, r21, one end of which is connected in parallel to the positive electrode side line P 1 .
Additional resistors R17, R18, R are provided at the other ends of r12 and r22.
19 and R20 are connected in series, and additional resistors R17 to R2
The other ends of 0 are connected to each other. Further, the comparators CP4, CP5 and CP6 compare the operating voltage VP5 with the reference voltages E 03 , E 04 and E 05, and VP5 ≦ E 03 ,
Logical value “1” when VP5 ≧ E 04 and VP5 ≧ E 05
Comparison outputs S4, S5 and S6 of VP5>
When E 03 , VP5 <E 04 and VP5 <E 05 , the comparison outputs S4, S5 and S6 having the logical value “0” are output.

【0032】具体的な基準電圧E03, 04, 05の値に
ついては、本実施例では、直流電源E1 の電圧を5V、
基抵抗R8の抵抗値を1kΩ、抵抗R17〜R20の抵
抗値を4kΩと設定しており、基準電圧E03,E04,E
05の値がそれぞれ0V<E03<0.5 V,0.5 V<E04
1V, 1V<E05<1.6 Vとなるように, 抵抗体R11
〜R16の各抵抗値が設定されている。つまり、リレー
素子RY11,RY21,RY12,RY22のうち1
個も選択されず動作していないとき、接続部点P5の動
作電圧VP5は0Vであり、選択したリレー素子が1個
だけ正常に動作しているときは、動作電圧VP5は5V
×1/5=1Vであり、リレー素子が2個動作するとき
は、動作電圧VP5は5V×1/3=1.66Vであり、所
定の回り込み防止用ダイオードの短絡異常によってリレ
ー素子が2個以上動作すると、動作電圧VP5は1.66V
以上となることを基準にして各基準電圧E03, 04,
05が設定されている。
Regarding the concrete values of the reference voltages E 03, E 04, E 05 , in this embodiment, the voltage of the DC power source E 1 is 5 V,
The resistance value of the base resistor R8 is set to 1 kΩ and the resistance values of the resistors R17 to R20 are set to 4 kΩ, and the reference voltages E 03 , E 04 , E are set.
The values of 05 are 0 V <E 03 <0.5 V, 0.5 V <E 04 <
Resistor R11 so that 1V, 1V <E 05 <1.6V
Each resistance value of ~ R16 is set. That is, one of the relay elements RY11, RY21, RY12, RY22
The operating voltage VP5 at the connection point P5 is 0V when no one is selected and operating, and the operating voltage VP5 is 5V when only one selected relay element is operating normally.
× 1/5 = 1V, and when two relay elements operate, the operating voltage VP5 is 5V × 1/3 = 1.66V, and there are two or more relay elements due to a short circuit abnormality of the sneak prevention diode. When operating, the operating voltage VP5 is 1.66V
Based on the above, each reference voltage E 03, E 04, E
05 is set.

【0033】また、異常検出回路4には第1と第2電源
ライン選択スイッチS10,S20,S01,S02の
作動状態を検出するスイッチ接点r11,r21,r1
2及びr22が個別に接続されている。異常検出回路4
は、コンパレータCP4,CP5及びCP6からの比較
出力S4,S5及びS6と、スイッチ接点S10a,S
20a,S01a,S02aからの出力を利用してリレ
ー素子RY11,RY21,RY12,RY22の動作
状態、つまり第1と第2電源ライン選択スイッチS1
0,S20,S01,S02の操作により選択した所望
のリレー素子が正常に動作しているか否かが検出される
よう構成されている。
Further, the abnormality detection circuit 4 has switch contacts r11, r21, r1 for detecting the operating states of the first and second power supply line selection switches S10, S20, S01, S02.
2 and r22 are individually connected. Abnormality detection circuit 4
Are comparison outputs S4, S5 and S6 from the comparators CP4, CP5 and CP6, and switch contacts S10a and S10.
Using the outputs from 20a, S01a, S02a, the operating states of the relay elements RY11, RY21, RY12, RY22, that is, the first and second power supply line selection switches S1.
It is configured to detect whether or not the desired relay element selected by operating 0, S20, S01, and S02 is operating normally.

【0034】例えば、第1及び第2電源ライン選択スイ
ッチS10及びS01を選択してリレー素子RY11を
動作させたときには、リレー素子RY11が正常であれ
ば、リレー素子RY11の作動状態に応動する接点r1
1がオンとなり、また、回り込み防止用ダイオードD2
2に短絡異常がなければ、動作検出回路PAにおいて、
この接点r11を含む直列回路のみが導通するため動作
検出回路PAと基抵抗R8との接続部点P5での動作電
圧VP5は本実施例では,5V×1/5=1Vとなる。
そして、コンパレータCP4,CP5及びCP6からの
各比較出力S4,S5及びS6の各論理値は夫々
“0”,“1”及び“0”となる。
For example, when the relay element RY11 is operated by selecting the first and second power source line selection switches S10 and S01, if the relay element RY11 is normal, the contact r1 responsive to the operating state of the relay element RY11.
1 is turned on, and the sneak prevention diode D2
If there is no short circuit abnormality in 2, in the operation detection circuit PA,
Since only the series circuit including the contact point r11 is conductive, the operating voltage VP5 at the connection point P5 between the operation detection circuit PA and the base resistor R8 is 5V × 1/5 = 1V in this embodiment.
The logical values of the comparison outputs S4, S5 and S6 from the comparators CP4, CP5 and CP6 are "0", "1" and "0", respectively.

【0035】また、同様にリレー素子RY11を動作さ
せたとき、このリレー素子RY11に動作異常があると
きは接点r11がオフのままであるため、電圧VP5は
0Vのままであり、各比較出力S4,S5及びS6の各
論理値は夫々“1”,“0”及び“0”となる。さら
に、同様にリレー素子RY11を動作させたとき、回り
込み防止用ダイオードD22に短絡異常があるときに
は、リレー素子RY11の作動状態を検出する接点r1
1がオンとなり、電流はリレー素子RY11に流れる
他、前記したようにリレー素子RY12,RY22,R
Y21にも流れ込む。したがって、動作検出回路PAを
構成する全直列回路が導通するため、接続部点P5での
動作電圧VP5は,5V×1/2=2.5 Vとなる。そし
て、コンパレータCP4,CP5及びCP6からの各比
較出力S4,S5及びS6の各論理値は夫々“0”,
“1”及び“1”となる。
Similarly, when the relay element RY11 is operated, when the relay element RY11 has an abnormal operation, the contact r11 remains off, so that the voltage VP5 remains 0 V and each comparison output S4. , S5 and S6 are "1", "0" and "0", respectively. Further, similarly, when the relay element RY11 is operated and the short-circuit prevention diode D22 has a short circuit abnormality, a contact r1 for detecting the operating state of the relay element RY11.
1 is turned on, the current flows through the relay element RY11, and as described above, the relay elements RY12, RY22, R
It also flows into Y21. Therefore, all the series circuits constituting the operation detection circuit PA are turned on, and the operation voltage VP5 at the connection point P5 is 5V × 1/2 = 2.5V. The logical values of the comparison outputs S4, S5 and S6 from the comparators CP4, CP5 and CP6 are "0",
It becomes "1" and "1".

【0036】このようにコンパレータCP4、CP5及
びCP6から出力される各比較出力は、選択したリレー
素子の動作状態と、このリレー素子に対する所定の回り
込み防止用ダイオードの短絡異常の有無に応じたものと
なる。異常検出回路4では、第1及び第2電源ライン選
択スイッチS10,S20,S01,S02の選択態様
とコンパレータCP4、CP5及びCP6からの比較出
力に基づいて動作異常のあるリレー素子RY11〜RY
22を特定して検出し、回り込み防止用ダイオードD1
1〜D22の短絡異常の有無を検出している。例えば、
第1と第2電源ライン選択スイッチS10とS01を選
択してリレー素子RY11を動作させた場合に、コンパ
レータCP4、CP5及びCP6からの比較出力が夫々
論理値“1”,“0”及び“0”となってリレー素子が
動作していない状態の比較出力が出力されたとき、リレ
ー素子RY11に動作異常があると検出されるよう構成
されている。
As described above, the respective comparison outputs output from the comparators CP4, CP5 and CP6 correspond to the operating state of the selected relay element and the presence / absence of a short circuit abnormality of the predetermined sneak-in prevention diode with respect to this relay element. Become. In the abnormality detection circuit 4, the relay elements RY11 to RY having an operation abnormality are based on the selection mode of the first and second power supply line selection switches S10, S20, S01 and S02 and the comparison output from the comparators CP4, CP5 and CP6.
22 is specified and detected, and a sneak-prevention diode D1
The presence or absence of a short circuit abnormality of 1 to D22 is detected. For example,
When the relay element RY11 is operated by selecting the first and second power supply line selection switches S10 and S01, the comparison outputs from the comparators CP4, CP5 and CP6 are logical values "1", "0" and "0", respectively. When a comparative output indicating that the relay element is not operating is output, the relay element RY11 is detected to have an abnormal operation.

【0037】次に、上記構成のマトリックス形選択回路
の回路動作を説明する。例えば、第1電源ライン選択ス
イッチS10と第2電源ライン選択スイッチS01とを
オンにしてリレー素子RY11を動作させる。このと
き、リレー素子RY11が正常に動作し、かつ、回り込
み防止用ダイオードD22に短絡異常がなければ、電圧
VP1は0Vに、電圧VP1は5Vになり、ダイオード
異常箇所検出回路1にてコンパレータCP0,CP1,
CP2及びCP3から比較出力S0,S1,S2及びS
3として夫々論理値“0”,“1”,“1”及び“0”
が出力され、異常箇所検出回路2において、表1の番号
1に相応するものと判断されて回り込み防止用ダイオー
ドD22が短絡異常していないことが検出される。ま
た、リレー動作異常検出回路3では動作電圧VP5が1
Vとなるため、コンパレータCP4,CP5及びCP6
からの比較出力S4,S5及びS6は夫々論理値
“0”,“1”及び“0”となり、異常検出回路4にて
リレー素子RY11が正常に動作しており、回り込み防
止用ダイオードD22が短絡異常していないことが検出
される。
Next, the circuit operation of the matrix type selection circuit having the above configuration will be described. For example, the first power supply line selection switch S10 and the second power supply line selection switch S01 are turned on to operate the relay element RY11. At this time, if the relay element RY11 operates normally and there is no short circuit abnormality in the sneak prevention diode D22, the voltage VP1 becomes 0V and the voltage VP1 becomes 5V. CP1,
Comparative outputs S0, S1, S2 and S from CP2 and CP3
3 as logical values “0”, “1”, “1” and “0” respectively
Is output, and the abnormal point detection circuit 2 determines that the circuit corresponds to No. 1 in Table 1 and detects that the sneak prevention diode D22 is not short-circuited abnormally. In the relay operation abnormality detection circuit 3, the operating voltage VP5 is 1
Since it becomes V, comparators CP4, CP5 and CP6
The comparison outputs S4, S5, and S6 have logical values "0", "1", and "0", respectively, and the relay element RY11 is operating normally in the abnormality detection circuit 4, and the sneak-prevention diode D22 is short-circuited. It is detected that there is no abnormality.

【0038】一方、リレー素子RY11の動作が正常
で、かつ、回り込み防止用ダイオードD22に短絡異常
がある場合には、電圧VP1は0Vとなり,VP2は3.
3 Vとなるためダイオード異常箇所検出回路1にてコン
パレータCP0,CP1,CP2,CP3からの比較出
力S0,S1,S2及びS3は論理値“0”,“1”,
“0”及び“0”となり異常箇所検出回路2にて表2の
番号1に相応するものと判断して回り込み防止用ダイオ
ードD22に短絡異常があることが検出される。さら
に、リレー動作異常検出回路3にて動作電圧VP5は2.
5 Vとなり、コンパレータCP4,CP5及びCP6か
らの比較出力S4,S5及びS6は夫々論理値“0”,
“1”及び“1”となるため、異常検出回路4にて回り
込み防止用ダイオードD22の短絡異常が検出される。
On the other hand, when the operation of the relay element RY11 is normal and there is a short circuit abnormality in the sneak prevention diode D22, the voltage VP1 becomes 0V and VP2 becomes 3.
Since it becomes 3 V, the comparison outputs S0, S1, S2, and S3 from the comparators CP0, CP1, CP2, and CP3 in the diode abnormal point detection circuit 1 are logical values "0", "1",
It becomes "0" and "0", and the abnormal portion detection circuit 2 judges that it corresponds to the number 1 in Table 2 and detects that the sneak-prevention diode D22 has a short circuit abnormality. Further, the operation voltage VP5 in the relay operation abnormality detection circuit 3 is 2.
It becomes 5 V, and the comparison outputs S4, S5 and S6 from the comparators CP4, CP5 and CP6 are logical values "0",
Since they are “1” and “1”, the abnormality detection circuit 4 detects a short circuit abnormality of the sneak-prevention diode D22.

【0039】以上のように本実施例によれば、従来のよ
うに回路を2重の構成にしなくてもよいため、従来に比
べて部品点数が少なくなり、所要スペースを小さくで
き、低コスト化が達成できる。また、短絡異常のある回
り込み防止用ダイオードの接続箇所が特定できるため、
メンテナンス作業が容易となる。
As described above, according to the present embodiment, the circuit does not have to have a double structure as in the conventional case. Therefore, the number of parts is smaller than in the conventional case, the required space can be reduced, and the cost can be reduced. Can be achieved. Also, because the connection location of the sneak-proof diode with a short circuit abnormality can be specified,
Maintenance work becomes easy.

【0040】さらに、動作異常検出手段を設けているの
で、第1と第2電源ライン選択スイッチS10,S2
0,S01,S02によって選択されたリレー素子が正
常に動作しているか否かを検出することができ、また、
動作に異常のあるリレー素子を特定できる。したがっ
て、メンテナンス作業が一層容易になる。なお、上記実
施例においては、夫々2本の第1電源ラインLV1,L
V2、第2電源ラインLH1,LH2を設けたが、各電
源ラインを3本以上ずつ設け、それらが交差する交点近
傍にリレー素子と回り込み防止用ダイオードとを両電源
ライン間に介挿するようにしてもよい。各電源ラインを
2本ずつ設けた場合には、上記のように短絡異常の回り
込み防止用ダイオードの接続箇所を特定できるが、各電
源ラインを3本以上ずつ設けた場合には、短絡異常の回
り込み防止用ダイオードがある第2電源ラインの箇所を
特定でき、短絡異常の回り込み防止用ダイオードがある
第1電源ラインは選択した第1電源ライン以外であると
特定できる。
Further, since the operation abnormality detecting means is provided, the first and second power source line selection switches S10 and S2 are provided.
It is possible to detect whether the relay element selected by 0, S01, S02 is operating normally, and
It is possible to identify a relay element that has an abnormal operation. Therefore, the maintenance work becomes easier. In the above embodiment, each of the two first power supply lines LV1, L
Although V2 and the second power supply lines LH1 and LH2 are provided, three or more power supply lines are provided, and a relay element and a sneak prevention diode are inserted between both power supply lines in the vicinity of the intersection where they intersect. May be. When two power supply lines are provided, it is possible to identify the connection location of the diode for preventing short circuit abnormality as described above. However, when three or more power supply lines are provided, short circuit abnormality is detected. The location of the second power supply line where the prevention diode is present can be specified, and the first power supply line where the short circuit abnormality sneak-in prevention diode is present can be specified to be other than the selected first power supply line.

【0041】また、各電源ラインを3本以上ずつ設けた
場合にも、第1電源ラインの電圧を検出する手段を設け
れば、短絡異常の回り込み防止用ダイオードの両電源ラ
インの接続箇所を特定できる。さらに、上記実施例にお
いて、作動手段としてリレー素子RY11, RY21,
RY12,RY22を用いて説明したが、通電によって
作動するものならば、その他の素子や装置でもよい。
Further, even when three or more power supply lines are provided, if the means for detecting the voltage of the first power supply line is provided, the connection location of both power supply lines of the diode for preventing the short circuit abnormality from sneaking in can be specified. it can. Further, in the above embodiment, the relay elements RY11 , RY21, and
Although description has been made using RY12 and RY22, other elements or devices may be used as long as they can be activated by energization.

【0042】さらに、直流電源E、E1 の電圧値や、抵
抗R1,R2、基抵抗R8、分圧抵抗R3〜R6、R1
1〜R16、付加抵抗R17〜R20の抵抗値は、上記
実施例に挙げたものに限定するものでない。
Further, the voltage values of the DC power supplies E and E 1 , the resistors R1 and R2, the base resistor R8, and the voltage dividing resistors R3 to R6 and R1.
The resistance values of 1 to R16 and the additional resistors R17 to R20 are not limited to those listed in the above embodiment.

【0043】[0043]

【発明の効果】以上説明したように、本発明に係わるマ
トリックス形選択回路によれば、回り込み防止用ダイオ
ードのカソード側が向けられている第2電源ラインの電
圧を取り出し、この電圧の変化によって回り込み防止用
ダイオードの短絡異常を検出する異常箇所検出手段を備
えたので、従来のように回路構成を2重に構成する必要
がなくなり、部品点数が少なくなって、所要スペースも
小さくてすみ、低コストとなり、さらには短絡異常の回
り込み防止用ダイオードの接続箇所を特定することがで
きるため、メンテナンス作業が容易となる効果が得られ
る。
As described above, according to the matrix type selection circuit of the present invention, the voltage of the second power supply line to which the cathode side of the sneak prevention diode is directed is taken out, and the sneak prevention is performed by the change of this voltage. Since it is equipped with an abnormal point detecting means for detecting a short circuit abnormality of the diode for use, it is not necessary to double the circuit configuration as in the conventional case, the number of parts is reduced, the required space is small, and the cost is low. Furthermore, since the connection location of the diode for preventing the short circuit abnormality from flowing around can be specified, the effect of facilitating the maintenance work can be obtained.

【0044】さらに、動作異常検出手段を備えたものに
あっては、作動手段の動作状態も検出され、動作異常の
ある作動手段を特定できるのでメンテナンス作業がさら
に容易となる。さらに、異常箇所検出手段及び動作異常
検出手段を備えたものにあっては、上記のような回路の
部品点数が少なくなり、短絡異常の回り込み防止用ダイ
オードの接続箇所を特定できると共に、動作異常のある
作動手段を特定できるという効果が得られる。
Further, in the case where the operation abnormality detecting means is provided, the operation state of the operation means is also detected, and the operation means having the operation abnormality can be specified, so that the maintenance work is further facilitated. Further, in the case where the abnormality location detecting means and the operation abnormality detecting means are provided, the number of parts of the circuit as described above is reduced, and it is possible to identify the connection location of the diode for preventing the sneak-in of the short circuit abnormality, and The effect that a certain operation means can be specified is obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の第1実施例を示す回路構成図であ
る。
FIG. 1 is a circuit configuration diagram showing a first embodiment of the present invention.

【図2】従来例のマトリックス形選択回路の説明図であ
る。
FIG. 2 is an explanatory diagram of a conventional matrix type selection circuit.

【符号の説明】[Explanation of symbols]

RY11,RY21,RY12,RY22 リレー素子
(作動手段) D11,D21,D12,D22 回り込み防止用ダイ
オード r11,r21,r12,r22 リレー素子の接点
(スイッチング素子) R8 基抵抗 R17,R18,R19,R20 付加抵抗 P,P1 正極側ライン N,N1 負極側ライン PA 動作検出回路 E,E1 直流電源 E01,E02,E03,E04,E05 基準電圧 LV1,LV2 第1電源ライン LH1,LH2 第2電源ライン S10,S20 第1電源ライン選択スイッチ(選択用
スイッチ手段) S01,S02 第2電源ライン選択スイッチ(選択用
スイッチ手段)
RY11, RY21, RY12, RY22 Relay element (operating means) D11, D21, D12, D22 Leakage prevention diode r11, r21, r12, r22 Relay element contact (switching element) R8 Base resistance R17, R18, R19, R20 Addition Resistor P, P 1 Positive line N, N 1 Negative line PA Operation detection circuit E, E 1 DC power supply E 01 , E 02 , E 03 , E 04 , E 05 Reference voltage LV1, LV2 First power line LH1, LH2 Second power supply line S10, S20 First power supply line selection switch (selection switch means) S01, S02 Second power supply line selection switch (selection switch means)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 直流電源の正極側ライン及び負極側ライ
ンに個別に接続され、互いに交差するよう配設された複
数の第1電源ライン及び第2電源ラインと、両電源ライ
ンの交点近傍で当該第1電源ライン及び第2電源ライン
間に介挿された通電によって作動状態となる作動手段及
びカソード側を第2電源ライン側とする回り込み防止用
ダイオードの直列回路と、前記正極側ライン及び負極側
ラインと各第1電源ライン及び第2電源ラインとの接続
部に配設された選択用スイッチ手段とを備えたマトリッ
クス形選択回路において、前記各第2電源ラインの電圧
を高電位の基準電圧と比較する第1の比較手段と、前記
各第2電源ラインの電圧を低電位の基準電圧と比較する
第2の比較手段と、前記第1の比較手段と第2の比較手
段からの比較出力と前記選択スイッチの選択状態とに基
づいて前記回り込み防止用ダイオードの短絡異常を検出
する異常箇所検出手段とを備えたことを特徴とするマト
リックス形選択回路。
1. A plurality of first power supply lines and second power supply lines, which are individually connected to a positive electrode side line and a negative electrode side line of a DC power supply and are arranged so as to intersect each other, in the vicinity of an intersection of both power supply lines. A series circuit of a sneak prevention diode having a second power source line side and an actuating means that is activated by energization interposed between the first power source line and the second power source line, and the positive electrode side line and the negative electrode side In a matrix type selection circuit including a line and a switch means for selection arranged at a connection portion of each of the first power supply line and the second power supply line, the voltage of each second power supply line is set to a high-potential reference voltage. First comparing means for comparing, second comparing means for comparing the voltage of each of the second power supply lines with a low-potential reference voltage, and comparison outputs from the first comparing means and the second comparing means. A matrix type selection circuit, comprising: an abnormal portion detecting means for detecting a short circuit abnormality of the sneak-in prevention diode based on a selection state of the selection switch.
【請求項2】 直流電源の正極側ライン及び負極側ライ
ンに個別に接続され、互いに交差するよう配設された複
数の第1電源ライン及び第2電源ラインと、両電源ライ
ンの交点近傍で当該第1電源ライン及び第2電源ライン
間に介挿された通電によって作動状態となる作動手段及
びカソード側を第2電源ライン側とする回り込み防止用
ダイオードの直列回路と、前記正極側ライン及び負極側
ラインと各第1電源ライン及び第2電源ラインとの接続
部に配設された選択用スイッチ手段とを備えたマトリッ
クス形選択回路において、直流電源に接続された前記各
作動手段の作動状態に個別に応動するスイッチング素子
と付加抵抗との直列回路を並列に接続した動作検出回路
と基抵抗との直列回路と、該直列回路の動作検出回路及
び基抵抗の接続部点における動作電圧を低電位の基準電
圧と比較する第3の比較手段と、前記動作電圧を中電位
の基準電圧と比較する第4の比較手段と、前記動作電圧
を高電位の基準電圧と比較する第5の比較手段と、前記
第3の比較手段、第4の比較手段及び第5の比較手段か
らの比較出力と前記選択スイッチの選択状態とに基づい
て前記作動手段の選択動作異常状態を検出する動作異常
検出手段とを備えたことを特徴とするマトリックス形選
択回路。
2. A plurality of first power supply lines and second power supply lines, which are individually connected to a positive electrode side line and a negative electrode side line of a DC power supply and arranged to intersect each other, in the vicinity of an intersection of both power supply lines. A series circuit of a sneak prevention diode having a second power source line side and an actuating means that is activated by energization interposed between the first power source line and the second power source line, and the positive electrode side line and the negative electrode side In a matrix type selection circuit including a line and a selection switch means arranged at a connecting portion between each of the first power supply line and the second power supply line, an operating state of each of the operation means connected to a DC power source is individually A series circuit of an operation detection circuit and a base resistance in which a series circuit of a switching element and an additional resistance that responds to is connected in parallel, and a connection point of the operation detection circuit and the base resistance of the series circuit And a fourth comparing means for comparing the operating voltage with a reference voltage having a low potential, a fourth comparing means for comparing the operating voltage with a reference voltage having a medium potential, and comparing the operating voltage with a reference voltage having a high potential. An abnormal selection operation state of the actuating means is detected based on the comparison outputs from the fifth comparison means, the third comparison means, the fourth comparison means and the fifth comparison means and the selection state of the selection switch. A matrix type selection circuit, comprising:
【請求項3】 直流電源の正極側ライン及び負極側ライ
ンに個別に接続され、互いに交差するよう配設された複
数の第1電源ライン及び第2電源ラインと、両電源ライ
ンの交点近傍で当該第1電源ライン及び第2電源ライン
間に介挿された通電によって作動状態となる作動手段及
びカソード側を第2の電源ライン側とする回り込み防止
用ダイオードの直列回路と、前記正極側ライン及び負極
側ラインと各第1電源ライン及び第2電源ラインとの接
続部に配設された選択用スイッチ手段とを備えたマトリ
ックス形選択回路において、前記各第2電源ラインの電
圧を高電位の基準電圧と比較する第1の比較手段と、前
記各第2電源ラインの電圧を低電位の基準電圧と比較す
る第2の比較手段と、前記第1の比較手段と第2の比較
手段からの比較出力と前記選択スイッチの選択状態とに
基づいて前記回り込み防止用ダイオードの短絡異常を検
出する異常箇所検出手段とを備え、さらに前記直流電源
に接続された前記各作動手段の作動状態に個別に応動す
るスイッチング素子と付加抵抗との直列回路を並列に接
続した動作検出回路と基抵抗との直列回路と、該直列回
路の動作検出回路及び基抵抗の接続部点における動作電
圧を低電位の基準電圧と比較する第3の比較手段と、前
記動作電圧を中電位の基準電圧と比較する第4の比較手
段と、前記動作電圧を高電位の基準電圧と比較する第5
の比較手段と、前記第3の比較手段、第4の比較手段及
び第5の比較手段からの比較出力と前記選択スイッチの
選択状態とに基づいて前記作動手段の選択動作異常状態
を検出する動作異常検出手段とを備えたことを特徴とす
るマトリックス形選択回路。
3. A plurality of first power supply lines and second power supply lines, which are individually connected to a positive electrode side line and a negative electrode side line of a DC power supply and arranged to intersect each other, in the vicinity of the intersection of both power supply lines. A series circuit of a sneak-prevention diode having a cathode side as a second power source line side and an operating means that is activated by energization interposed between the first power source line and the second power source line, and the positive electrode side line and the negative electrode In a matrix type selection circuit including a side line and a switch means for selection arranged at a connecting portion between each of the first power supply lines and the second power supply line, the voltage of each of the second power supply lines is a high-potential reference voltage. And a second comparison means for comparing the voltage of each of the second power supply lines with a low-potential reference voltage, and comparison outputs from the first comparison means and the second comparison means. And an abnormal point detecting means for detecting a short circuit abnormality of the sneak-prevention diode based on the selection state of the selection switch, and further responding individually to the operating state of each operating means connected to the DC power supply. A series circuit of an operation detection circuit and a base resistance in which a series circuit of a switching element and an additional resistance is connected in parallel, and an operation voltage at a connection point of the operation detection circuit and the base resistance of the series circuit is a low-potential reference voltage. Third comparing means for comparing, fourth comparing means for comparing the operating voltage with a reference voltage of medium potential, and fifth comparing means for comparing the operating voltage with a reference voltage of high potential.
Operation for detecting an abnormal operation of the selecting operation of the actuating means based on the comparison output from the comparing means, the third comparing means, the fourth comparing means and the fifth comparing means and the selection state of the selecting switch. A matrix type selection circuit comprising: abnormality detecting means.
JP06171894A 1994-03-30 1994-03-30 Matrix type selection circuit Expired - Lifetime JP3178569B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06171894A JP3178569B2 (en) 1994-03-30 1994-03-30 Matrix type selection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06171894A JP3178569B2 (en) 1994-03-30 1994-03-30 Matrix type selection circuit

Publications (2)

Publication Number Publication Date
JPH07270470A true JPH07270470A (en) 1995-10-20
JP3178569B2 JP3178569B2 (en) 2001-06-18

Family

ID=13179293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06171894A Expired - Lifetime JP3178569B2 (en) 1994-03-30 1994-03-30 Matrix type selection circuit

Country Status (1)

Country Link
JP (1) JP3178569B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004170117A (en) * 2002-11-18 2004-06-17 Yazaki Corp Insulation detecting device of non-grounded power source
JP2020106481A (en) * 2018-12-28 2020-07-09 株式会社デンソーテン Electric leakage detector, electric leakage detection system, and diagnosis method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004170117A (en) * 2002-11-18 2004-06-17 Yazaki Corp Insulation detecting device of non-grounded power source
JP2020106481A (en) * 2018-12-28 2020-07-09 株式会社デンソーテン Electric leakage detector, electric leakage detection system, and diagnosis method

Also Published As

Publication number Publication date
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