JPH07263528A - Wafer holding device and holding method - Google Patents
Wafer holding device and holding methodInfo
- Publication number
- JPH07263528A JPH07263528A JP4828694A JP4828694A JPH07263528A JP H07263528 A JPH07263528 A JP H07263528A JP 4828694 A JP4828694 A JP 4828694A JP 4828694 A JP4828694 A JP 4828694A JP H07263528 A JPH07263528 A JP H07263528A
- Authority
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- Japan
- Prior art keywords
- wafer
- holding
- holding device
- holding method
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウエハ処理装置のウエ
ハ保持装置において、ウエハを静電気力を利用して保持
する装置および保持方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for holding a wafer in a wafer holding apparatus of a wafer processing apparatus by using electrostatic force.
【０００２】[0002]
【従来の技術】従来のウエハ処理装置のウエハ保持装置
は、特開平２−１４８８３７号公報や特開平２−２６７
２７１号公報のように、ウエハ外周部を爪状の部材で押
圧して保持する方式が一般的に使用されている。このよ
うなウエハ表面に接触する部材があると、接触部はウエ
ハの処理が阻害されてしまうという問題があるととも
に、接触部材もウエハとともに何らかの処理が行われ、
その結果接触部材に反応生成物などの異物源が付着した
り、接触部材が損傷を受け、それによって異物が発生す
るという可能性もある。2. Description of the Related Art A wafer holding device of a conventional wafer processing apparatus is disclosed in JP-A-2-148837 and JP-A-2-267.
As in Japanese Patent No. 271, a method of pressing and holding the outer peripheral portion of a wafer with a claw-shaped member is generally used. If there is a member that comes into contact with the wafer surface as described above, there is a problem that the processing of the wafer is hindered at the contact portion, and the contact member also undergoes some processing together with the wafer.
As a result, there is a possibility that a foreign matter source such as a reaction product adheres to the contact member or the contact member is damaged, thereby generating foreign matter.
【０００３】また、ウエハを静電気力を用いて保持する
方式（以後、静電吸着と称する）のウエハ保持において
は、たとえば特開平２−１３５７５３号公報に示されて
いるように、誘電体からなる静電吸着部にウエハを載置
して高電圧を印加し、静電吸着力によりウエハの保持を
行っている。この場合、ウエハの外周部には特にウエハ
を押しつける部材などは記載されていない。したがっ
て、上記の例のような接触部材による異物発生の可能性
は解決されている。しかし、ウエハと静電吸着部材の配
置関係は、ウエハが最も上（ウエハ処理空間側）に位置
し、静電吸着部材はウエハの下方となるように、静電吸
着部材に段が設けられている。このような段があると、
ウエハ処理時のガス流れがウエハ外周部で急変し、ウエ
ハ処理に不均一が発生する場合も考えられる。Further, in a wafer holding method of holding a wafer by using electrostatic force (hereinafter referred to as electrostatic attraction), it is made of a dielectric material as disclosed in, for example, Japanese Unexamined Patent Publication No. 2-1355753. The wafer is placed on the electrostatic attraction unit, a high voltage is applied, and the wafer is held by the electrostatic attraction force. In this case, a member for pressing the wafer is not described on the outer peripheral portion of the wafer. Therefore, the possibility of foreign matter being generated by the contact member as in the above example is solved. However, the arrangement relationship between the wafer and the electrostatic attraction member is such that the step is provided on the electrostatic attraction member such that the wafer is located at the top (on the wafer processing space side) and the electrostatic attraction member is below the wafer. There is. If there is such a step,
It is also possible that the gas flow during wafer processing suddenly changes at the outer peripheral portion of the wafer, causing non-uniformity in wafer processing.
【０００４】また、特開昭６３−５６９２０号公報に記
載の例では、平坦な静電吸着部材の上にウエハが載置さ
れている。この場合は、ウエハ周辺の静電吸着部が、ウ
エハ処理時に損傷を受けたり、堆積物が生成したりする
ことが考えられ、次のウエハが搬送されてきた場合に、
搬送精度が十分でないと、損傷あるいは堆積部にウエハ
が載置されることとなり、搬送ミスやウエハ処理の不具
合が発生したりすると言う懸念がある。Further, in the example disclosed in Japanese Patent Laid-Open No. 63-56920, a wafer is placed on a flat electrostatic attraction member. In this case, the electrostatic attraction part around the wafer may be damaged during wafer processing, or deposits may be generated, and when the next wafer is transferred,
If the transfer accuracy is not sufficient, there is a concern that the wafer may be damaged or placed on the depositing part, and a transfer error or a wafer processing defect may occur.
【０００５】ウエハの受け渡しや搬送については、ウエ
ハを押し上げピンなどで上下に移動させ、ウエハをウエ
ハ保持部に載置した後、その位置でウエハ処理を実施す
る場合と、ウエハ処理に適した位置まで保持装置を移動
させる場合がある。前者の場合は特に問題はないが、後
者の場合は、保持部の搬送方法を信頼性の高いものとす
る必要がある。特開昭５９−１８６３２５号公報に記載
の例では、大気側に設置されたシリンダーの駆動軸に直
結された軸が減圧室に貫通しており、大気と減圧室はシ
ールリングによって隔離される。さらに、貫通した軸に
ウエハ保持装置が連結されていて、ウエハの上下が行わ
れている。ウエハ上下の際の大気と減圧室のシールは、
シールリングと貫通軸の摺動に依存している。このよう
な場合、シールリングが損傷しないように十分考慮する
必要がある。損傷が生じると、異物の原因となったり、
リークの原因となったりするので、特に、腐食性ガスや
プラズマ中でウエハ処理が実施される場合は、細心の注
意が必要となる。また、ウエハ保持装置である金属ブロ
ックを可動とした例で、特開昭５８−３２４１０号公報
の場合は、ウエハ処理装置に接続されたベローズが絶縁
体を介して前記金属ブロックにつながっている。しか
し、スパッタ装置のウエハ保持を示したこの例では、ウ
エハ処理装置（スパッタ室）の容器内壁から金属ブロッ
クにベローズが直接接続されており、ウエハ受け渡しの
場合に必要となる受け渡し機構部材の設置などを別途考
えなければならない。Regarding the transfer and transfer of the wafer, the wafer is moved up and down by a push-up pin or the like, the wafer is placed on the wafer holder, and the wafer is processed at that position, and a position suitable for the wafer processing. The holding device may be moved up to. In the case of the former, there is no particular problem, but in the case of the latter, it is necessary to make the carrying method of the holder highly reliable. In the example disclosed in JP-A-59-186325, a shaft directly connected to the drive shaft of a cylinder installed on the atmosphere side penetrates the decompression chamber, and the atmosphere and the decompression chamber are isolated by a seal ring. Furthermore, a wafer holding device is connected to the penetrating shaft to move the wafer up and down. The seal between the atmosphere and the decompression chamber above and below the wafer is
It depends on the sliding of the seal ring and the through shaft. In such a case, it is necessary to give sufficient consideration so that the seal ring will not be damaged. If damage occurs, it may cause foreign matter,
This may cause a leak, and therefore, when the wafer processing is carried out in a corrosive gas or plasma, extreme caution is required. Further, in the example in which the metal block which is the wafer holding device is movable, in the case of Japanese Patent Laid-Open No. 58-32410, a bellows connected to the wafer processing device is connected to the metal block via an insulator. However, in this example showing the wafer holding of the sputtering apparatus, the bellows is directly connected to the metal block from the inner wall of the container of the wafer processing apparatus (sputtering chamber), and the transfer mechanism member required for the wafer transfer is installed. Must be considered separately.
【０００６】[0006]
【発明が解決しようとする課題】従来のウエハ保持は、
ウエハの処理面に何らかの部材を接触させているため、
接触部とその近傍から異物が発生しやすく、ウエハ処理
の歩留まりを低下させたり、ウエハ処理装置の清掃を頻
繁に行う必要があり装置の稼働率が低下するなどの問題
があった。また、ウエハ処理とウエハ受け渡し位置が異
なる場合に、ウエハ保持装置を上下に移動させる必要が
あったが、このときのウエハ処理室とその外界を遮断す
るのにエラストマーシール部の摺動で行っていたために
異物が発生しやすいと言う問題があった。さらに、ウエ
ハ処理がプラズマ中である場合は、エラストマーシール
が劣化しやすいという問題もある。また、ウエハ保持装
置の製作法を工夫し、ウエハ温度調節のための冷媒が漏
れたりする事を防止し、あるいはそのシールのためのエ
ラストマーシールの使用を廃止する事にある。The conventional wafer holding method is as follows.
Since some member is in contact with the processing surface of the wafer,
There are problems that foreign substances are likely to be generated from the contact portion and the vicinity thereof, the yield of wafer processing is reduced, and the wafer processing apparatus needs to be frequently cleaned, and the operation rate of the apparatus is reduced. In addition, when the wafer processing position and the wafer transfer position are different, it was necessary to move the wafer holding device up and down. At this time, the elastomer seal portion is slid to shut off the wafer processing chamber and its outside. Therefore, there is a problem that foreign matter is likely to occur. Further, there is a problem that the elastomer seal is easily deteriorated when the wafer is processed in plasma. Further, the manufacturing method of the wafer holding device is devised to prevent the leakage of the coolant for adjusting the wafer temperature, or to eliminate the use of the elastomer seal for the seal.
【０００７】また、ウエハ処理装置の本来の目的である
ウエハ処理を確実にかつ均一に実施できるウエハ保持装
置を提供するため、本発明では、ウエハ処理のためのガ
ス流れを均一化することも目的の一つとしている。さら
に、静電気力によるウエハの保持をより確実にするた
め、たとえウエハが横方向に滑ったりしても、外周部の
部材で強制することも必要である。Further, in order to provide a wafer holding device capable of reliably and uniformly carrying out the wafer processing which is the original purpose of the wafer processing apparatus, the present invention also aims to make the gas flow for the wafer processing uniform. And one of them. Further, in order to more securely hold the wafer by the electrostatic force, it is necessary to forcibly hold the wafer even if the wafer slides in the lateral direction with a member on the outer peripheral portion.
【０００８】以上のような異物が低減されたウエハ保持
装置を提供し、かつ均一なウエハ処理を可能とすること
により、ウエハ処理の歩留まりを向上しウエハ処理装置
の稼働率を向上することが、本発明の解決すべき課題で
ある。It is possible to improve the yield of wafer processing and improve the operating rate of the wafer processing apparatus by providing the wafer holding apparatus in which the foreign matters are reduced and enabling uniform wafer processing. This is a problem to be solved by the present invention.
【０００９】[0009]
【課題を解決するための手段】ウエハ処理表面に接触す
る部材をなくすことにより、異物低減が図れる。そのた
めに、静電気力を利用したウエハ保持方法を採用する。
また、異物発生源ともなるエラストマーシールの使用を
極力制限できるウエハ保持装置の製作方法、構造を採用
する。つぎに、ＲＦ電力をウエに印加してバイアス電位
を発生させてウエハ処理を行う場合に、異常放電の発生
を防止するため、ＲＦ電力印加部と基準電位部が直接対
向しないように電気絶縁材料で両者を遮断した。このよ
うな処置を施した上で、ウエハ受け渡しのためのピンを
設置し、そのピンを電気的に導通がとれるようにした。
ピンとウエハが接触することにより、ウエハに蓄積され
た電荷をウエハ受け渡し時に取り除かれて残留電荷によ
る静電吸着力が瞬時に消えるので、ウエハが無理な力で
押し上げられることがない。また、ウエハ温度調節用冷
媒を流す流路を形成する方法を拡散接合やロウー付けな
どとして、流路を形成する部分が完全に接合された構造
としたので、流路以外の部分に貫通孔を設けてもそのシ
ールを施す必要がない。そのため、温度検出器、ウエハ
有無検出器が容易に設置できる。Foreign matter can be reduced by eliminating members that come into contact with the wafer processing surface. Therefore, a wafer holding method using electrostatic force is adopted.
Further, a method and structure for manufacturing a wafer holding device that can limit the use of an elastomer seal, which also serves as a foreign matter generation source, to the utmost. Next, when RF power is applied to the wafer to generate a bias potential and wafer processing is performed, in order to prevent the occurrence of abnormal discharge, an electrically insulating material is used so that the RF power application section and the reference potential section do not directly face each other. And cut off both. After performing such a treatment, a pin for handing over the wafer was set, and the pin was electrically connected.
When the pins come into contact with the wafer, the charges accumulated on the wafer are removed when the wafer is transferred, and the electrostatic attraction force due to the residual charges disappears instantly, so that the wafer is not pushed up by an excessive force. In addition, the method of forming the flow path through which the coolant for controlling the wafer temperature is formed is diffusion bonding or brazing so that the part forming the flow path is completely bonded. Even if it is provided, it is not necessary to apply the seal. Therefore, the temperature detector and the wafer presence / absence detector can be easily installed.
【００１０】また、ウエハ表面のガス流れを均一化する
ために、ウエハの外周部にガス流れ均一化部材（サセプ
タと称することにする。）を設けた。サセプタは、その
表面がウエハ表面か上方にあり、ウエハ外周面でガス流
れが急変しないしてある。また、ウエハ外周部に対向す
る面をウエハ面と略垂直となるようにし、ウエハの横方
向の動きや横滑りを強制する。さらに、ウエハ外周部の
ウエハ裏面に対向するカバー部材とウエハ裏面間には、
ウエハの処理に伴う反応生成物やプラズマが回り込み、
ウエハ裏面に異物が付着する場合があるが、これは、ウ
エハ裏面とカバー部材間の距離を小さくすることで防止
した。In order to make the gas flow on the wafer surface uniform, a gas flow equalizing member (hereinafter referred to as a susceptor) is provided on the outer peripheral portion of the wafer. The surface of the susceptor is above or above the wafer surface, and the gas flow does not suddenly change on the outer peripheral surface of the wafer. Further, the surface facing the outer peripheral portion of the wafer is set to be substantially perpendicular to the wafer surface to force the lateral movement and the lateral slip of the wafer. Further, between the back surface of the wafer and the cover member facing the back surface of the wafer at the outer peripheral portion of the wafer,
Reaction products and plasma accompanying the processing of wafers wrap around,
Foreign matter may adhere to the back surface of the wafer, which was prevented by reducing the distance between the back surface of the wafer and the cover member.
【００１１】[0011]
【作用】以上述べたように、ウエハに付着する異物が発
生源を極力排除したので、それによる異物の低減が図ら
れた。さらに、ガス流れが均一化されウエハ処理の面内
均一性の向上が図れる。また、ウエハ保持装置の構造と
製作方法の工夫によりウエハ温度測定やウエハ有無検出
器が容易に設置でき、装置の信頼性向上や、使い勝手の
向上が図れる。As described above, since the source of the foreign matter adhering to the wafer is eliminated as much as possible, it is possible to reduce the foreign matter. Further, the gas flow is made uniform, and the in-plane uniformity of wafer processing can be improved. Further, by devising the structure and manufacturing method of the wafer holding device, the wafer temperature measurement and the wafer presence / absence detector can be easily installed, and the reliability of the device and the usability can be improved.
【００１２】[0012]
【実施例】本発明の実施例を図面を用いて説明する。図
１は本発明の実施例の一例を示したものである。図１に
おいて、ウエハ１が金属部材２の上に形状された誘電体
薄膜３の上に保持されている。さらに、金属部材２の下
は絶縁部材４、ベース５と続き、支柱６で支持される。
金属部材２には、ウエハ１の温度を調節するための冷媒
を流す冷媒流路７が形成され、この冷媒流路７に冷媒を
供給するために、ベース５を、絶縁部材４を通して貫通
孔が設けられ、冷媒供給部８が設置される。また、ウエ
ハ受け渡しピン９が金属部材２、絶縁部材４、ベース５
への貫通孔に挿入されており、その貫通孔の側壁は、絶
縁管１０で形成される。ウエハ受け渡しピン９は、支柱
６の周囲に設けられたガイド１１で案内され、図には示
していない上下機構により支柱６の軸方向に移動させら
れ、ウエハ１の受け渡しが行われる。また、この支柱６
の内側には、絶縁材１２を介してＲＦ供給軸１３が設置
され、さらにＲＦ供給軸１３はパイプ状となっていて、
その内側はウエハ冷却ガス供給孔１４となっている。絶
縁部材１２はベース５を貫通して絶縁部材４まで達して
いる。ＲＦ供給軸１３は絶縁部材４を貫通し金属部材２
に達しており、ＲＦ供給軸１３の他端（図は下側）は、
図には示していないが、ウエハ１を誘電体薄膜３に保持
するために高電圧およびウエハ１に高周波バイアスを印
加するための各電源に接続される。なお、図１には、ウ
エハの有無をチェックするためのウエハ検出器１５を設
置した。この位置には、ウエハ温度検出器も設置可能で
ある。そして、ウエハ１の外周部にはサセプタ１６（請
求項では誘電体薄膜３と金属部材２のカバーとしてい
る。）が設置され、ウエハ処理のためのガス流れを均一
化する。また、サセプタ１６の内周部表面はウエハ１の
裏面と対向している。サセプタ１６はアルミナなどの電
気絶縁材料からなり、金属部材２、絶縁部材４、ベース
５の外周部をカバーしている。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows an example of an embodiment of the present invention. In FIG. 1, a wafer 1 is held on a dielectric thin film 3 formed on a metal member 2. Further, below the metal member 2, the insulating member 4 and the base 5 are continued, and are supported by the support columns 6.
The metal member 2 is formed with a coolant passage 7 through which a coolant for adjusting the temperature of the wafer 1 is passed. In order to supply the coolant to the coolant passage 7, the base 5 is provided with a through hole through the insulating member 4. The cooling medium supply unit 8 is provided. Further, the wafer transfer pins 9 are formed by the metal member 2, the insulating member 4, and the base 5.
Is inserted into the through hole, and the side wall of the through hole is formed by the insulating tube 10. The wafer transfer pin 9 is guided by a guide 11 provided around the support 6, and is moved in the axial direction of the support 6 by an up-and-down mechanism (not shown) to transfer the wafer 1. In addition, this pillar 6
An RF supply shaft 13 is installed inside the container via an insulating material 12, and the RF supply shaft 13 has a pipe shape.
A wafer cooling gas supply hole 14 is formed on the inner side thereof. The insulating member 12 penetrates the base 5 and reaches the insulating member 4. The RF supply shaft 13 penetrates through the insulating member 4 and the metal member 2
And the other end (the lower side in the figure) of the RF supply shaft 13 is
Although not shown in the figure, it is connected to each power supply for applying a high voltage and a high frequency bias to the wafer 1 to hold the wafer 1 on the dielectric thin film 3. A wafer detector 15 for checking the presence or absence of a wafer is installed in FIG. A wafer temperature detector can also be installed at this position. Then, a susceptor 16 (which covers the dielectric thin film 3 and the metal member 2 in the claims) is installed on the outer peripheral portion of the wafer 1 to make the gas flow for wafer processing uniform. Further, the inner peripheral surface of the susceptor 16 faces the back surface of the wafer 1. The susceptor 16 is made of an electrically insulating material such as alumina and covers the outer peripheral portions of the metal member 2, the insulating member 4, and the base 5.
【００１３】図１に示したウエハ保持装置は、たとえば
図２に示すようなプラズマ雰囲気で使用される。図２は
マイクロ波プラズマエッチング装置の模式図であるが、
以下エッチング装置に本発明のウエハ保持装置を適用し
た場合を例として説明する。The wafer holding device shown in FIG. 1 is used in a plasma atmosphere as shown in FIG. 2, for example. 2 is a schematic diagram of the microwave plasma etching apparatus,
The case where the wafer holding device of the present invention is applied to the etching device will be described below as an example.
【００１４】真空容器１７に、ウエハ保持装置１８、真
空ポンプ１９、エッチングガス供給部２０、が設置され
る。さらに、ウエハ処理室２１には石英窓２２を通して
マイクロ波が導入される。マイクロ波は、マグネトロン
２３で発生させられ導波管２４を経てウエハ処理室２１
に導かれる。また、ウエハ保持装置１８には、静電吸着
のための直流電源２５とエッチングに必要なバイアス電
圧をウエハ１に印加するためのＲＦ電源２６が接続され
る。ＲＦ供給軸１４３は中空構造となっていて、ウエハ
１温度調節のためのガス（ヘリウムなど）がガス供給孔
２７から導入される。ウエハ処理室２１にはプラズマ２
８が発生させられ、これによりウエハ処理が行われる。A wafer holding device 18, a vacuum pump 19, and an etching gas supply unit 20 are installed in the vacuum container 17. Further, microwaves are introduced into the wafer processing chamber 21 through the quartz window 22. The microwave is generated by the magnetron 23, passes through the waveguide 24, and is transferred to the wafer processing chamber 21.
Be led to. Further, a DC power supply 25 for electrostatic attraction and an RF power supply 26 for applying a bias voltage required for etching to the wafer 1 are connected to the wafer holding device 18. The RF supply shaft 143 has a hollow structure, and gas (helium or the like) for adjusting the temperature of the wafer 1 is introduced from the gas supply hole 27. Plasma 2 is placed in the wafer processing chamber 21.
8 is generated, whereby wafer processing is performed.
【００１５】図２に示していないが、真空容器１７はバ
ルブを介して大気からウエハ１を導入あるいは搬出する
ための別の真空室と接続されている。このウエハ搬送機
構を用いて真空室１７に搬送されたウエハ１は、図２に
二点鎖線で示された搬送位置で受け渡しが行われる。そ
のため、ウエハ保持装置１８は搬送位置まで下げられ
る。この位置でウエハ受け渡しピン９を上下させること
により、ウエハ１が受け渡され誘電体薄膜面３に載置さ
れる。なお、ウエハ１の温度を調節するための冷媒は、
別に設けられた冷媒温度調節器を経て冷媒供給８から導
入されて冷媒流路７を循環し、すでに金属部材２、誘電
体薄膜３の温度を所定の温度に調節している。ウエハ１
がウエハ保持装置１８に載置されると、ウエハ検出器１
５から導入されたレーザー光線がウエハ裏面で反射し、
反射光が信号として検出されてウエハ１の載置が確認さ
れる。また、図１には示していないが、ウエハ検出器１
５と同じようにして設けられたウエハ温度検出器（蛍光
温度計）によりウエハ温度が検出開始される。エッチン
グガスが供給され、マイクロ波が導入されると放電が開
始される。このような状態で、静電吸着のための直流電
圧が直流電源２５から供給され、プラズマ２８を介して
静電吸着のための電気回路が形成され、ウエハ１が誘電
体薄膜３に吸着される。次に、ガス供給孔２７からヘリ
ウムガスが供給されると、ヘリウムガスを介したウエハ
温度制御が進行する。この状態で、エッチングの準備が
完了したので、マイクロ波を所定の値に設置したりＲＦ
電圧を印加することで、エッチングが行われる。エッチ
ング処理が終了すると、ＲＦ電圧印加を停止する。この
ときプラズマ２８はまだ存在している。すなわちウエハ
１は静電吸着されたままである。エッチングガスの供給
を停止し、場合によっては静電吸着の際に蓄積された電
荷を除去するためにエッチングガスの代わりにアルゴン
などの非エッチングガスを導入し、除電を行う。この間
に、ヘリウムガスの供給を停止し、ウエハ１の裏面から
ウエハ１を押し上げる力を取り除いておく。除電が終了
したら、アルゴンガス供給を停止し、静電吸着用直流電
圧印加も停止する。エッチングガスや除電ガスが排気さ
れ、高真空となったところで、ウエハ保持装置１８の下
方への移動と、ウエハ１を搬出するための工程が開始さ
れる。搬出工程は導入工程の逆の手順で実施され、さら
に、新たなウエハが次のエッチングのために導入され
る。このようにして、エッチングが実施される。Although not shown in FIG. 2, the vacuum container 17 is connected via a valve to another vacuum chamber for introducing or unloading the wafer 1 from the atmosphere. The wafer 1 transferred to the vacuum chamber 17 using this wafer transfer mechanism is transferred at the transfer position indicated by the chain double-dashed line in FIG. Therefore, the wafer holding device 18 is lowered to the transfer position. By moving the wafer transfer pin 9 up and down at this position, the wafer 1 is transferred and placed on the dielectric thin film surface 3. The coolant for adjusting the temperature of the wafer 1 is
It is introduced from the coolant supply 8 through a separately provided coolant temperature controller and circulates in the coolant channel 7, and the temperatures of the metal member 2 and the dielectric thin film 3 are already adjusted to a predetermined temperature. Wafer 1
When the wafer is placed on the wafer holding device 18, the wafer detector 1
The laser beam introduced from 5 is reflected on the back surface of the wafer,
The placement of the wafer 1 is confirmed by detecting the reflected light as a signal. Although not shown in FIG. 1, the wafer detector 1
The wafer temperature detector (fluorescence thermometer) provided in the same manner as 5 starts detecting the wafer temperature. When the etching gas is supplied and the microwave is introduced, the discharge is started. In such a state, a DC voltage for electrostatic attraction is supplied from the DC power supply 25, an electric circuit for electrostatic attraction is formed through the plasma 28, and the wafer 1 is attracted to the dielectric thin film 3. . Next, when helium gas is supplied from the gas supply hole 27, wafer temperature control via helium gas proceeds. In this state, since the preparation for etching was completed, microwave was set to a predetermined value or RF
Etching is performed by applying a voltage. When the etching process is completed, the RF voltage application is stopped. At this time, the plasma 28 still exists. That is, the wafer 1 remains electrostatically adsorbed. The supply of the etching gas is stopped, and in some cases, non-etching gas such as argon is introduced instead of the etching gas in order to remove the charges accumulated during electrostatic adsorption, and the charge is removed. During this period, the supply of helium gas is stopped and the force for pushing up the wafer 1 from the back surface of the wafer 1 is removed. When the static elimination is completed, the argon gas supply is stopped and the electrostatic attraction DC voltage application is also stopped. When the etching gas and the static elimination gas are exhausted and become a high vacuum, the process of moving the wafer holding device 18 downward and carrying out the wafer 1 is started. The unloading process is performed in the reverse order of the introducing process, and a new wafer is introduced for the next etching. In this way, etching is performed.
【００１６】以下、本発明の効果を順に説明する。ウエ
ハ表面におけるエッチングガス及びエッチングで生成さ
れた反応生成物（ガス）は、ウエハ１表面で、ほぼ一様
な濃度で分布するが、ウエハ外周部においては、反応生
成物の発生場所がウエハ外にないことガス流れのための
流路境界が急変することなどから、周辺部のエッチング
特性が中心部とは異なる恐れがある。そこで、本発明で
は、ウエハ１の表面より上方（あるいは同一面）にガス
流れの急変を防止するためにウエハ１の上方にサセプタ
１６を配置している。サセプタ１６の面があるため、エ
ッチングガスや反応生成物の流れが、ウエハ外周部でわ
ずかに上方に向い、エッチングガス、反応生成物の滞留
効果が現れ、あたかもウエハ外周部にエッチング反応部
あるかのような現象を示すこととなる。そのため、ウエ
ハ外周部においても、エッチングが均一に実施されるこ
とになる。The effects of the present invention will be described below in order. The etching gas on the surface of the wafer and the reaction product (gas) generated by the etching are distributed at a substantially uniform concentration on the surface of the wafer 1. However, in the outer peripheral portion of the wafer, the place where the reaction product is generated is outside the wafer. There is a possibility that the etching characteristics of the peripheral portion may be different from those of the central portion because the flow path boundary for the gas flow changes abruptly. Therefore, in the present invention, the susceptor 16 is disposed above the wafer 1 above the surface of the wafer 1 (or on the same plane) in order to prevent a sudden change in the gas flow. Since the surface of the susceptor 16 is present, the flow of the etching gas and the reaction product is directed slightly upward at the outer peripheral portion of the wafer, and the retention effect of the etching gas and the reaction product appears. The above phenomenon will be exhibited. Therefore, the etching is uniformly performed even on the outer peripheral portion of the wafer.
【００１７】さらに、上記のほかに、ウエハ１の外周面
はサセプタ１６に収納された状態となっているため、何
らかの異常事態により静電吸着が消失し、ウエハ１が裏
面に供給されているヘリウムガスの圧力で動いたとして
も、サセプタ１６の側壁でウエハ１が大きくずれるのを
阻止できるため、ウエハ受け渡しが不可能となってエッ
チング室を大気開放しなければならないといった事態を
防止できるという効果もある。なお、この時、サセプタ
１６のウエハ外周面に対向する面がほぼ垂直であるた
め、ウエハ１が横滑りしても、サセプタ１６の面がテ−
パ状となっている場合と異なり、サセプタ１６の水平面
にウエハ1が乗り上げることもない。Further, in addition to the above, since the outer peripheral surface of the wafer 1 is accommodated in the susceptor 16, electrostatic attraction disappears due to some abnormal situation, and the helium is supplied to the back surface of the wafer 1. Even if the wafer is moved by the gas pressure, it is possible to prevent the wafer 1 from being largely displaced on the side wall of the susceptor 16, so that it is possible to prevent a situation in which the wafer cannot be handed over and the etching chamber has to be opened to the atmosphere. is there. At this time, since the surface of the susceptor 16 facing the outer peripheral surface of the wafer is substantially vertical, even if the wafer 1 slides sideways, the surface of the susceptor 16 does not move.
Unlike the case where the wafer 1 is formed, the wafer 1 does not ride on the horizontal surface of the susceptor 16.
【００１８】次に、ウエハ１の外周部の裏面とサセプタ
１６間の隙間について述べる。図３にウエハ外周部の拡
大図を示す。ウエハ処理面側では、プラズマ２８が発生
しており、エッチングガスや反応生成物が飛び交ってい
る。したがって、ウエハ１の裏面とサセプタ１６の間隙
間が狭いと、それらが隙間に進入し、ウエス裏面などに
堆積する。これは、ウエハ裏面の異物となるため、歩留
まりの低下などをきたすことがあるので、好ましくな
い。そこで、両者の隙間を極力小さくすれば、エッチン
グガスや反応生成物の進入を低減でき、ウエハ裏面の異
物を減らすことができる。別に実施した試験の結果によ
れば、この隙間を０．３ｍｍ以下にすると、上記効果が
顕著であった。Next, the gap between the back surface of the outer peripheral portion of the wafer 1 and the susceptor 16 will be described. FIG. 3 shows an enlarged view of the outer peripheral portion of the wafer. Plasma 28 is generated on the wafer processing surface side, and etching gas and reaction products are scattered around. Therefore, if the gap between the back surface of the wafer 1 and the susceptor 16 is narrow, they enter the gap and deposit on the back surface of the waste cloth or the like. This is not preferable because it becomes a foreign matter on the back surface of the wafer, which may lower the yield. Therefore, if the gap between the two is made as small as possible, it is possible to reduce the penetration of etching gas and reaction products, and it is possible to reduce foreign substances on the back surface of the wafer. According to the result of the test conducted separately, the above effect was remarkable when the gap was 0.3 mm or less.
【００１９】さて、前述したエッチング処理は、ＲＦ電
圧をウエハ１に印加して実施している。この際、直接Ｒ
Ｆ電圧が印加される金属部材２とベース５との間で異常
放電が発生することがある。この異常放電が発生する
と、ＲＦ電圧がウエハ１に正常に印加されなくなり、エ
ッチングそのものが正常ではなくなる。これは、エッチ
ングに限らずＲＦ電圧を利用してプラズマを発生させる
方式のウエハ処理装置に一般的に言えることである。こ
れを防ぐため、本発明のウエハ保持装置では、ＲＦ印加
部と異なる電位にあるベース５を空間的に遮断できるよ
うに絶縁管１０を挿入した。これにより異常放電が防止
できる。Now, the above-mentioned etching process is carried out by applying an RF voltage to the wafer 1. At this time, direct R
Abnormal discharge may occur between the metal member 2 to which the F voltage is applied and the base 5. When this abnormal discharge occurs, the RF voltage is not normally applied to the wafer 1, and the etching itself is not normal. This is generally applicable not only to etching but also to a wafer processing apparatus of a type that uses an RF voltage to generate plasma. In order to prevent this, in the wafer holding device of the present invention, the insulating tube 10 is inserted so that the base 5 having a potential different from that of the RF applying portion can be spatially cut off. This can prevent abnormal discharge.
【００２０】ウエハ１の受け渡しについて述べる。ウエ
ハ１は静電吸着されるが、この際にウエハ１には電荷が
蓄積される。この電荷はウエハ１を誘電体薄膜３に吸着
させておく能力があり、静電吸着用の直流電源２５のス
イッチを切ってもウエハ１は静電吸着されている。そこ
で、蓄積電荷が消失するまで、ウエハ１の搬送を持ちな
ければならない。また、消失の有無も判定しなければな
らないなどの問題がある。そこで、図４に示したよう
に、ウエハ受け渡しピン９を、例えば炭化シリコンなど
のような、わずかに導電性のある材料としておく。こう
することにより、蓄積電荷は、ウエハ受け渡しピン９を
通じて接地ラインに流れ、速やかに消失される。これに
より、ウエハ受け渡し事故もなく、信頼性の高いウエハ
受け渡しが可能となる。なお、ウエハ受け渡しピン９を
通じた接地回路をプラズマ発生中は切断することも可能
であり、接地ラインとＲＦ印加部が接近しているため、
異常放電が発生するような場合に採用すればよい。The delivery of the wafer 1 will be described. The wafer 1 is electrostatically adsorbed, but at this time, charges are accumulated on the wafer 1. This charge has the ability to attract the wafer 1 to the dielectric thin film 3, and the wafer 1 is electrostatically attracted even when the DC power supply 25 for electrostatic attraction is turned off. Therefore, it is necessary to carry the wafer 1 until the accumulated charge disappears. There is also a problem that it is necessary to determine whether or not the data has disappeared. Therefore, as shown in FIG. 4, the wafer transfer pins 9 are made of a slightly conductive material such as silicon carbide. By doing so, the accumulated charges flow to the ground line through the wafer transfer pin 9 and are quickly lost. As a result, a highly reliable wafer transfer can be performed without a wafer transfer accident. The ground circuit through the wafer transfer pin 9 can be disconnected during plasma generation, and the ground line and the RF application section are close to each other.
It may be adopted when abnormal discharge occurs.
【００２１】ウエハ１の受け渡しは、ウエハ受け渡しピ
ン９の上下によって実行されるが、ウエハ１が振動しな
がら受け渡しされると異常が発生したりするため、滑ら
かにウエハ受け渡しピン９が上下しなければならない。
そのガイドを確実にするため、本発明では、支柱６にガ
イド１１を設置した。これにより、ウエハ受け渡しピン
９が上下機構のために異常に長くなることもなく、信頼
性の高いウエハ受け渡しが可能となった。The transfer of the wafer 1 is performed by moving the wafer transfer pins 9 up and down. However, if the wafer 1 is transferred while vibrating, an abnormality may occur. Therefore, if the wafer transfer pins 9 do not move smoothly. I won't.
In order to secure the guide, the guide 11 is installed on the column 6 in the present invention. As a result, the wafer transfer pins 9 do not become abnormally long due to the vertical movement mechanism, and highly reliable wafer transfer is possible.
【００２２】さて、上記のように、信頼性の高いウエハ
保持装置の要素が明らかになったが、次に、ウエハ１の
受け渡し位置とウエハ処理位置（図２に示したウエハ位
置に相当）が異なる場合の問題点解決方法について述べ
る。As described above, the elements of the highly reliable wafer holding device have been clarified. Next, the transfer position of the wafer 1 and the wafer processing position (corresponding to the wafer position shown in FIG. 2) are determined. A method for solving problems in different cases will be described.
【００２３】図５は、ウエハ保持装置の全体構成を示し
たものである。上部は、ほぼ図１と同じである。図１と
異なる部分は、絶縁部材４をＲＦが印加される金属部材
２の外周側面を被うようにした点である。このようにす
ることで、ＲＦ印加部と接地部の間の沿面距離が長くな
り、より一層異常放電に対する防止効果が向上する。FIG. 5 shows the overall structure of the wafer holding device. The upper part is almost the same as in FIG. The difference from FIG. 1 is that the insulating member 4 covers the outer peripheral side surface of the metal member 2 to which RF is applied. By doing so, the creeping distance between the RF applying section and the grounding section becomes longer, and the effect of preventing abnormal discharge is further improved.
【００２４】ウエハ受け渡し位置とウエハ処理装置の間
を上下させるため、本発明ではウエハ保持装置の支柱６
とフランジ２９間にベローズ３０を設けた。大気とウエ
ハ処理室の真空シールを兼ねており、図５には示してい
ないが大気側に設けられた支柱６のガイドと上下機構に
より、ベローズ３０は伸縮する。本発明では、ベローズ
３０の径が最小となるように、支柱６とフランジ２９間
に設けるようにした。ベローズ３０の径が小さいと、ウ
エハ受け渡し機構に負荷される力も小さくてすむため、
上下機構部の簡略化や高精度化が容易に達成される。エ
ラストマーシールを用いた摺動部を設ける場合に比較し
て、摺動部の磨耗から発生する異物が排除されること
や、真空シールに対する信頼性が向上することは言うま
でもない。In order to move up and down between the wafer transfer position and the wafer processing apparatus, in the present invention, the column 6 of the wafer holding apparatus is used.
The bellows 30 is provided between the flange 29 and the flange 29. Although not shown in FIG. 5, the bellows 30 expands and contracts by a guide and a vertical mechanism of the column 6 provided on the atmosphere side, which also serves as a vacuum seal between the atmosphere and the wafer processing chamber. In the present invention, the bellows 30 are provided between the column 6 and the flange 29 so that the diameter of the bellows 30 is minimized. If the diameter of the bellows 30 is small, the force applied to the wafer transfer mechanism can be small, so
It is easy to achieve simplification and high accuracy of the vertical mechanism. Needless to say, as compared with the case where the sliding portion using the elastomer seal is provided, foreign matter generated due to abrasion of the sliding portion is eliminated and the reliability of the vacuum seal is improved.
【００２５】このようにして、ウエハ保持装置の上下運
動が行われるが、ベローズ３０や、その他の支柱６、ウ
エハ受け渡しピン９などがプラズマに曝されることは、
エッチング生成物が付着して異物となる問題や、これら
の材料の耐プラズマ性の点から好ましくない。そこで、
本発明においては、互いに交差する円筒形のカバー３
１、３２をベース５とフランジ２９に設けた。カバー３
１とカバー３２は互いに重なり合っており、ウエハ保持
装置が上下しても重なり合いが消失することの無いよう
な寸法とした。このカバー３１、３２は、いずれも接地
電位に維持されており、常にカバー内の部材はプラズマ
から隔離され、汚染から保護される。In this way, the wafer holding device is moved up and down, but the bellows 30, the other columns 6, the wafer transfer pins 9, etc. are exposed to the plasma.
It is not preferable in view of the problem that the etching products are attached to form foreign matters and the plasma resistance of these materials. Therefore,
In the present invention, the cylindrical covers 3 intersect each other.
1, 32 are provided on the base 5 and the flange 29. Cover 3
1 and the cover 32 overlap each other, and the dimensions are set so that the overlap does not disappear even when the wafer holding device is moved up and down. Both the covers 31 and 32 are maintained at the ground potential, and members inside the covers are always isolated from plasma and protected from contamination.
【００２６】以上に示した例のように、本発明によれ
ば、異物が少なくかつ均一なウエハ処理が行われるウエ
ハ保持装置及び保持方法が達成できる。As described above, according to the present invention, it is possible to achieve a wafer holding apparatus and a wafer holding method in which uniform wafer processing is performed with few foreign substances.
【００２７】なお、本発明が適用されるのは、エッチン
グ装置に限定されるものでなく、静電吸着でウエハ（被
処理物）を保持する必要のあるウエハ処理装置と処理方
法において、広く応用できることは勿論である。The present invention is not limited to the etching apparatus, but is widely applied to a wafer processing apparatus and a processing method that need to hold a wafer (object to be processed) by electrostatic attraction. Of course you can.
【００２８】ところが、上記のウエハ保持装置を製作す
るという観点で図１や図５を見ると、金属部材２の製作
が、冷媒流路７があるために困難であることがわかる。
勿論、金属部材２を２個の部材に分けて製作し、エラス
トマーシールで冷媒をシールすることにより、同じ効果
が得られる部材を構成することができる。しかし、この
方法では、シール部が必要であるため、余分な締結部や
容積を必要としたり、図１に示すような金属部材２を貫
通する穴を設ける場合に、各々の穴にそれぞれシールを
必要とするといった煩雑さ、複雑さ、ひいては信頼性の
低下といった問題が生じてしまう。そこで、本発明で
は、金属部材２を、製作の段階で一体物としてしまう方
法を採用した。その例を図６、７に示した。また、図８
に説明図を示した。冷媒流路７は、図８に示すように、
冷媒供給孔３３から冷媒吐出孔３４まで連続した流路と
なっている。この冷媒流路７を機械加工で製作すること
は、図８のようにオープンとなった状態であれば可能で
ある。図８のような部材を２個製作し、両者を重ね合せ
て外周部を溶接で接合すれば、外観上は図１の金属部材
２と同じものが製作できる。しかし、図８に示したシー
ル面３５は、その部部に貫通孔（たとえば図１の絶縁管
１０が挿入されている孔）を設ける必要がある。したが
って、金属部材２の外周部のみ接合したのでは、本部材
を完成させることができない。However, from the viewpoint of manufacturing the above-mentioned wafer holding device, FIGS. 1 and 5 show that it is difficult to manufacture the metal member 2 due to the presence of the coolant passage 7.
Of course, by producing the metal member 2 by dividing it into two members and sealing the refrigerant with the elastomer seal, a member having the same effect can be constructed. However, in this method, since a seal portion is required, an extra fastening portion or volume is required, and when a hole penetrating the metal member 2 as shown in FIG. 1 is provided, a seal is provided in each hole. Problems such as complexity of necessity, complexity, and deterioration of reliability will occur. Therefore, in the present invention, a method is adopted in which the metal member 2 is made into an integral body at the manufacturing stage. Examples thereof are shown in FIGS. Also, FIG.
An explanatory diagram is shown in. The coolant channel 7 is, as shown in FIG.
It is a continuous flow path from the coolant supply hole 33 to the coolant discharge hole 34. It is possible to manufacture the coolant channel 7 by machining as long as it is in an open state as shown in FIG. If two members as shown in FIG. 8 are manufactured, they are overlapped and the outer peripheral portions are joined by welding, the same appearance as the metal member 2 of FIG. 1 can be manufactured. However, the sealing surface 35 shown in FIG. 8 needs to be provided with a through hole (for example, a hole into which the insulating pipe 10 of FIG. 1 is inserted) in its part. Therefore, this member cannot be completed by joining only the outer peripheral portion of the metal member 2.
【００２９】本発明では、これを解決するため、一つ
は、ロストワックス法を用いた。この例を図６に示し
た。はじめにワックスで、冷媒流路７とほぼ同じ形状の
部材を製作する。次に外側が金属部材２の外形とほぼ同
じ形状の型を用意し、ワックスで製作した流路の型を内
部に設置して、鋳込む。次に、ワックスを除去すると、
金属部材２が完成する。In the present invention, in order to solve this, one is to use the lost wax method. This example is shown in FIG. First, wax is used to manufacture a member having substantially the same shape as the coolant channel 7. Next, a mold having an outer shape substantially the same as the outer shape of the metal member 2 is prepared, a flow path mold made of wax is installed inside, and casting is performed. Then remove the wax,
The metal member 2 is completed.
【００３０】本発明の別の実施例を図７に示した。これ
は、冷媒流路７を予め機械加工した金属部材３８（仮に
これを（上）と記した）と金属部材３９（これを（下）
と記した）を、接合材料４０を間に狭んで重ね合わす。
金属部材２がアルミニウムあるいはアルミニウム合金で
あれば、接合部材４０を融点の低いアルミニウム合金
（シリコン含有アルミニウム合金など）とする。このよ
うにした上で、真空中に保持して加圧し、約６００℃ま
で昇温すると、融点の低い接合部材４０が融けて、金属
部材（上）３８および（下）３９と反応し、互いに接合
される。このような拡散接合法を用いれば、図８に示し
たシール面３５も確実に接合されるので、貫通孔３７を
なんら特別の配慮をせずに加工できる。拡散接合は、一
組に限定されず多数を同時に接合できるので、予め金属
部材３８、３９を製作しておき、多量に接合すれば、コ
スト的にも特に問題ない。Another embodiment of the present invention is shown in FIG. This is because the coolant channel 7 is machined in advance by a metal member 38 (provisionally referred to as (upper)) and a metal member 39 (this is (lower)).
Are described above), and the bonding material 40 is sandwiched between them.
If the metal member 2 is aluminum or an aluminum alloy, the joining member 40 is an aluminum alloy having a low melting point (such as a silicon-containing aluminum alloy). After doing so, when the pressure is maintained in a vacuum and the temperature is raised to about 600 ° C., the joining member 40 having a low melting point is melted and reacts with the metal members (upper) 38 and (lower) 39 to be mutually To be joined. If such a diffusion bonding method is used, the sealing surface 35 shown in FIG. 8 is also securely bonded, so that the through hole 37 can be processed without any special consideration. The diffusion bonding is not limited to one set, and a large number can be simultaneously bonded. Therefore, if the metal members 38 and 39 are manufactured in advance and a large amount of them are bonded, there is no particular problem in terms of cost.
【００３１】[0031]
【発明の効果】以上述べたように、本発明によれば、静
電吸着によるウエハ保持を、ウエハ受渡しの時の横滑り
防止やウエハ裏面のガスによる浮き上がり防止のために
ウエハ表面にウエイト等の部材を用いることなく確実に
実行できるので、ウエハ処理における異物発生が低減で
き、ウエハ処理の歩留まりが向上するという効果が期待
できる。また、異物低減のためにウエハ処理装置を清掃
しなければならなくなるまでに稼働できる期間が長くな
るので、装置の稼働率が向上するという効果もある。さ
らに、ウエハ表面のガス流れを均一化するためにウエハ
外周部をウエハ表面と略同一面としたため、面内均一性
の優れたウエハ処理が実行されるという効果もある。ま
た、ウエハ保持装置を製作する上で、冷媒シールのため
に必要なエラストマーシールが不用になるので、ウエハ
保持装置の製作が容易になるという効果もある。As described above, according to the present invention, a member such as a weight is attached to the front surface of the wafer to hold the wafer by electrostatic attraction, to prevent side slip during wafer delivery and to prevent floating on the back surface of the wafer due to gas. Since it can be surely executed without using, it is possible to expect an effect that the generation of foreign matter in the wafer processing can be reduced and the yield of the wafer processing can be improved. Further, since the period during which the wafer processing apparatus needs to be cleaned to reduce foreign matters becomes long, the operation rate of the apparatus is improved. Furthermore, since the outer peripheral portion of the wafer is made substantially flush with the wafer surface in order to make the gas flow on the wafer surface uniform, there is an effect that wafer processing with excellent in-plane uniformity is executed. Further, in manufacturing the wafer holding device, since the elastomer seal required for the refrigerant seal is not necessary, there is an effect that the wafer holding device can be easily manufactured.
【図１】本発明の一実施例ウエハ保持装置の説明図であ
る。FIG. 1 is an explanatory diagram of a wafer holding device according to an embodiment of the present invention.
【図２】本発明のウエハ保持装置を用いたウエハ処理装
置の説明図である。FIG. 2 is an explanatory diagram of a wafer processing apparatus using the wafer holding device of the present invention.
【図３】ウエハ保持装置のウエハ外周部拡大図である。FIG. 3 is an enlarged view of a wafer outer peripheral portion of the wafer holding device.
【図４】ウエハ受け渡し時の蓄積電荷の除去方法を示し
た説明図である。FIG. 4 is an explanatory diagram showing a method of removing accumulated charges when a wafer is handed over.
【図５】本発明のウエハ保持装置の他の実施例の説明図
である。FIG. 5 is an explanatory view of another embodiment of the wafer holding device of the present invention.
【図６】ウエハ保持装置の冷媒流路形成方法の実施例の
説明図である。FIG. 6 is an explanatory diagram of an embodiment of a method for forming a coolant channel of a wafer holding device.
【図７】本発明の他の実施例の説明図である。FIG. 7 is an explanatory diagram of another embodiment of the present invention.
【図８】冷媒流路の説明図である。FIG. 8 is an explanatory diagram of a coolant channel.
１…ウエハ、２…金属部材、３…誘電体薄膜、４…絶縁
部材、５…ベース、６支柱…、７…冷媒流路、８…冷媒
供給部、９…ウエハ受け渡しピン、１０…絶縁管、１１
…ガイド、１２…絶縁材、１３…ＲＦ供給軸、１４…ガ
ス供給孔、１５ウエハ検出器…、１６…サセプタ、１７
…ウエハ保持装置、１９…真空ポンプ、２０…エッチン
グガス供給部、２１…ウエハ処理室、２２…石英窓、２
３…マグネトロン、２４…導波管、２５…直流電源、２
６…ＲＦ電源、２７…ガス供給孔、２８…プラズマ、２
９…フランジ、３０…ベローズ、３１…カバー、３２…
カバー、３３…冷媒供給孔、３４…冷媒吐出孔、３５…
シール面、３６…ロストワックス、３７…貫通孔、３８
…金属部材（上）、３９…金属部材（下）、４０…接合
部材。DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Metal member, 3 ... Dielectric thin film, 4 ... Insulating member, 5 ... Base, 6 support | pills, 7 ... Refrigerant flow path, 8 ... Refrigerant supply part, 9 ... Wafer delivery pin, 10 ... Insulation pipe , 11
... Guide, 12 ... Insulating material, 13 ... RF supply shaft, 14 ... Gas supply hole, 15 Wafer detector ..., 16 ... Susceptor, 17
... Wafer holding device, 19 ... Vacuum pump, 20 ... Etching gas supply unit, 21 ... Wafer processing chamber, 22 ... Quartz window, 2
3 ... Magnetron, 24 ... Waveguide, 25 ... DC power supply, 2
6 ... RF power source, 27 ... Gas supply hole, 28 ... Plasma, 2
9 ... Flange, 30 ... Bellows, 31 ... Cover, 32 ...
Cover, 33 ... Refrigerant supply hole, 34 ... Refrigerant discharge hole, 35 ...
Sealing surface, 36 ... Lost wax, 37 ... Through hole, 38
... Metal member (upper), 39 ... Metal member (lower), 40 ... Joining member.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小川 芳文 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 七田 弘之 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 (72)発明者 坪根 恒彦 山口県下松市大字東豊井794番地 株式会 社日立製作所笠戸工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshifumi Ogawa 794 Azuma Higashitoyo, Kudamatsu City, Yamaguchi Prefecture Stock company Hitachi Kasado Factory (72) Inventor Hiroyuki Nanada 794 Azuma Higashitoyo, Yamaguchi Prefecture (72) Inventor Tsunehiko Tsubone 794, Higashi-Toyoi, Higashitoyo, Yamaguchi Prefecture Hitachi Ltd., Kasado Factory, Hitachi Ltd.
Claims (16)
エハ保持装置および保持方法において、該ウエハの処理
面側の表面に該ウエハと接触する部材を設けないで静電
気力に用いてウエハを該ウエハ保持装置に保持し、該ウ
エハ処理表面と同一面かあるいは該ウエハ表面より外側
に位置した表面を有する絶縁部材で該ウエハ外周部を構
成し、該ウエハ外周部と対向する該絶縁部材面を該ウエ
ハ処理面の法線方向と略平行にしたことを特徴とするウ
エハ保持装置および保持方法。1. A wafer holding device and a holding method for holding a wafer in a wafer processing apparatus, wherein a wafer is used by an electrostatic force without providing a member for contacting the wafer on a processing surface side of the wafer. The outer peripheral portion of the wafer is constituted by an insulating member held by a holding device and having the same surface as the wafer processing surface or a surface located outside the wafer surface, and the insulating member surface facing the outer peripheral portion of the wafer is formed. A wafer holding apparatus and a holding method, wherein the wafer holding apparatus and the holding method are set to be substantially parallel to a normal direction of a wafer processing surface.
持方法において、該ウエハの温度を調節する冷媒を循環
させる流路を設けた金属からなる部材の一方の表面に該
ウエハを静電気力で保持するための脆性材料からなる誘
電体薄膜を形成し、該金属からなる部材の他の一方の表
面に接して電気絶縁材料からなる部材を配置し、さらに
ある基準の電位に接地された電気良導体からなる部材を
配置して、該三種類の部材を誘電体薄膜付き金属部材、
電気絶縁材料部材、基準電位部材の順に重ねて固定し、
該基準電位部材側から該金属部材の冷媒流路に貫通する
冷媒の供給および吐出のための電気絶縁部材で側面が構
成された流路を設け、さらに該三種類の部材を貫通する
少なくとも三本以上の側壁が電気絶縁材料からなる貫通
孔を設けてウエハ受け渡し機構に接続された移動可能な
部材を挿入し、かつ電気良導体からなるパイプ状の部材
を該基準電位部材に固定して該三種類の部材を支持し、
該パイプ状部材の内側に電気絶縁材料を介して電気良導
体からなる小径パイプ状部材を挿入し、該小径パイプ状
部材を該基準電位部材と該電気絶縁材料部材を貫通して
該金属部材に接続し、該小径パイプ部材を通じて該ウエ
ハ保持のための静電気力発生用電位該ウエハ処理に必要
なＲＦ電圧を印加し、該小径パイプの内側の穴から該ウ
エハの裏面と該誘電体薄膜表面間に気体を供給可能とす
るよう該金属部材と該誘電体薄膜に側壁が電気絶縁材料
からなる貫通孔を設けたことを特徴とするウエハ保持装
置および保持方法。2. The wafer holding apparatus and holding method according to claim 1, wherein the wafer is electrostatically applied to one surface of a member made of metal provided with a channel for circulating a coolant for adjusting the temperature of the wafer. A dielectric thin film made of a brittle material for holding is formed, a member made of an electrically insulating material is arranged in contact with the other surface of the member made of the metal, and a good electrical conductor grounded to a certain reference potential. A member made of a metal thin film with a dielectric thin film,
Fix the electrical insulation material member and the reference potential member in this order,
Provided is a flow path whose side surface is constituted by an electrically insulating member for supplying and discharging a refrigerant, which penetrates the refrigerant flow path of the metal member from the reference potential member side, and further at least three which penetrate the three types of members. A movable member connected to the wafer transfer mechanism by inserting a through hole whose side wall is made of an electrically insulating material is inserted, and a pipe-shaped member made of a good electrical conductor is fixed to the reference potential member to provide the three types. Support the members of
A small-diameter pipe-shaped member made of a good electrical conductor is inserted inside the pipe-shaped member via an electrically insulating material, and the small-diameter pipe-shaped member is connected to the metal member by penetrating the reference potential member and the electrically insulating material member. Then, an electrostatic force generating potential for holding the wafer is applied through the small-diameter pipe member, and an RF voltage necessary for processing the wafer is applied to the wafer from the inner hole of the small-diameter pipe between the back surface of the wafer and the surface of the dielectric thin film. A wafer holding device and holding method, wherein a through hole whose side wall is made of an electrically insulating material is provided in the metal member and the dielectric thin film so that gas can be supplied.
持方法において、ウエハの受け渡し機構に接続された移
動可能な部材を、電気的に導通のある材料で製作したこ
とを特徴とするウエハ保持装置および保持方法。3. The wafer holding device and holding method according to claim 2, wherein the movable member connected to the wafer transfer mechanism is made of an electrically conductive material. Device and holding method.
よび保持方法において、該誘電体薄膜の表面に該ウエハ
を保持した際に該ウエハ周辺から該金属部材および該誘
電体薄膜が見えないように、電気絶縁材料からなる部材
で該誘電体薄膜および該金属部材を履ったことを特徴と
するウエハ保持装置および保持方法。4. The wafer holding device and holding method according to claim 2, wherein the metal member and the dielectric thin film are invisible from the periphery of the wafer when the wafer is held on the surface of the dielectric thin film. As described above, the wafer holding device and the holding method, wherein the dielectric thin film and the metal member are worn with a member made of an electrically insulating material.
よび保持方法において、該金属部材の周囲を電気絶縁材
料で履い、さらにその外周を該基準電位部材に電気的に
接続された電気良導体からなる部材で履い、さらにその
回りを電気絶縁材料からなる該カバー部材で履ったこと
を特徴とするウエハ保持装置および保持方法。5. The wafer holding apparatus and holding method according to claim 2, wherein the metal member is surrounded by an electrically insulating material, and the outer periphery thereof is electrically connected to the reference potential member. A wafer holding device and a holding method, characterized in that the member is made of, and the cover member made of an electrically insulating material is put around the member.
よび保持方法において、該ウエハの受け渡しのための貫
通孔に挿入された移動可能な部材を移動させるためのガ
イドを、該パイプ状部材の外側に設けたことを特徴とす
るウエハ保持装置および保持方法。6. The wafer holding device and holding method according to claim 2, wherein a guide for moving a movable member inserted in a through hole for delivering the wafer is provided in the pipe-shaped member. A wafer holding device and a holding method, wherein the wafer holding device is provided outside the wafer.
よび保持方法において、ウエハ保持装置をウエハ処理装
置に設置するためのフランジに固定する方法を、該パイ
プ状部材と該フランジ間に設けた伸縮可能なベローズと
し、ウエハ処理に好適な位置にウエハを配置するための
該ウエハ保持装置の移動を、該ベローズの伸縮で行うこ
とを特徴とするウエハ保持装置および保持方法。7. The wafer holding apparatus and holding method according to claim 1, wherein a method for fixing the wafer holding apparatus to a flange for installing the wafer processing apparatus is provided between the pipe-shaped member and the flange. A wafer holding device and holding method, wherein the bellows is an expandable and contractible bellows, and the movement of the wafer holding device for placing the wafer at a position suitable for wafer processing is performed by expanding and contracting the bellows.
よび保持方法において、該基準電位部材の外周部に略円
筒状のカバーを設け、さらに該カバーと径の異なる略円
筒状の部材を該フランジに固定し、該ウエハ保持装置の
上下運動において該円筒状部材の重なりにより、該円筒
状部材の内側が履われているようにしたことを特徴とす
るウエハ保持装置および保持方法。8. The wafer holding apparatus and holding method according to claim 1, wherein a substantially cylindrical cover is provided on an outer peripheral portion of the reference potential member, and a substantially cylindrical member having a diameter different from that of the cover is provided. A wafer holding device and holding method, wherein the inside of the cylindrical member is worn by being fixed to the flange so that the cylindrical members overlap each other when the wafer holding device moves up and down.
よび保持方法において、該三種類の部材に側壁が電気絶
縁材料で履われた貫通孔を設け、該誘電体薄膜に保持さ
れたウエハの温度を計測する検出器を貫通孔に設置した
ことを特徴とするウエハ保持装置および保持方法。9. The wafer holding device and holding method according to claim 1, wherein the three types of members are provided with through holes whose sidewalls are made of an electrically insulating material, and are held by the dielectric thin film. A wafer holding device and holding method, wherein a detector for measuring the temperature of the wafer is installed in the through hole.
および保持方法において、該三種類の部材に側壁が電気
絶縁材料で履われた貫通孔を設け、該誘電体薄膜に保持
されたウエハの有無を検出するための検出器を該貫通孔
に設置したことを特徴とするウエハ保持装置および保持
方法。10. The wafer holding device and holding method according to claim 1, wherein the three types of members are provided with through holes whose sidewalls are made of an electrically insulating material, and are held by the dielectric thin film. A wafer holding device and holding method, wherein a detector for detecting the presence or absence of the wafer is installed in the through hole.
び保持方法において、該ウエハの有無検出器を、光ファ
イバーとし、ファイバーを通して導入された光が該ウエ
ハの裏面で反射するか否かで該ウエハの有無を検出する
ことを特徴とするウエハ保持装置および方法。11. The wafer holding apparatus and holding method according to claim 10, wherein the presence / absence detector of the wafer is an optical fiber, and whether the light introduced through the fiber is reflected on the back surface of the wafer or not. A wafer holding device and method, wherein the presence or absence of the wafer is detected.
び保持方法において、該ウエハの有無検出器を、請求項
９に記載のウエハ温度を検出する検出器の信号で行うこ
とを特徴とするウエハ保持装置および保持方法。12. The wafer holding device and holding method according to claim 10, wherein the presence / absence detector of the wafer is performed by a signal from the detector for detecting the wafer temperature according to claim 9. Holding device and holding method.
置および保持方法において、該金属部材に該ウエハの温
度調節のための冷媒流路を形成するために拡散接合を用
いたことを特徴とするウエハ保持装置および保持方法。13. The wafer holding apparatus and holding method according to claim 1, wherein diffusion bonding is used to form a coolant flow path for controlling the temperature of the wafer in the metal member. Holding device and holding method.
置および保持方法において、該金属部材に該ウエハの温
度調節のための冷媒流路を形成するためにロー付け法を
用いたことを特徴とするウエハ保持装置および保持方
法。14. The wafer holding apparatus and holding method according to claim 1, wherein a brazing method is used to form a coolant passage for adjusting the temperature of the wafer in the metal member. Wafer holding device and holding method.
置および保持方法において、該金属部材に該ウエハの温
度調節のための冷媒流路を形成するために鋳造法を用い
たことを特徴とするウエハ保持装置および保持方法。15. The wafer holding device and holding method according to claim 1, wherein a casting method is used to form a coolant passage for adjusting the temperature of the wafer in the metal member. Holding device and holding method.
置および保持方法において、該誘電体薄膜と該金属部材
を履ったカバー部材と該ウエハの外周部裏面とが対向す
る部分の間隙を、０．３ｍｍ以下としたことを特徴とす
るウエハ保持装置および保持方法。16. The wafer holding apparatus and holding method according to claim 1, wherein a gap is provided in a portion where the dielectric thin film, the cover member wearing the metal member, and the outer peripheral back surface of the wafer face each other. And 0.3 mm or less, a wafer holding device and a holding method.
Priority Applications (30)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4828694A JP3186008B2 (en) | 1994-03-18 | 1994-03-18 | Wafer holding device |
| TW083108049A TW277139B (en) | 1993-09-16 | 1994-09-01 | |
| EP94113803A EP0644578B1 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| DE69433903T DE69433903T2 (en) | 1993-09-16 | 1994-09-02 | Holding method and holding system for a substrate |
| DE69429318T DE69429318T2 (en) | 1993-09-16 | 1994-09-02 | Holding method and holding system for a substrate |
| EP99101718A EP0921559B1 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| EP01107801A EP1119023A3 (en) | 1993-09-16 | 1994-09-02 | Method of holding substrate and substrate holding system |
| KR1019940023529A KR100290700B1 (en) | 1993-09-16 | 1994-09-16 | Substrate holding system and substrate holding method |
| US08/307,238 US5792304A (en) | 1993-09-16 | 1994-09-16 | Method of holding substrate and substrate holding system |
| US08/670,180 US6048434A (en) | 1993-09-16 | 1996-06-20 | Substrate holding system including an electrostatic chuck |
| US08/904,623 US5961774A (en) | 1993-09-16 | 1997-08-01 | Method of holding substrate and substrate holding system |
| US09/050,417 US5906684A (en) | 1993-09-16 | 1998-03-31 | Method of holding substrate and substrate holding system |
| US09/109,178 US6336991B1 (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/109,033 US5985035A (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/108,835 US6221201B1 (en) | 1993-09-16 | 1998-07-02 | Method of holding substrate and substrate holding system |
| US09/478,992 US6217705B1 (en) | 1993-09-16 | 2000-01-07 | Method of holding substrate and substrate holding system |
| KR1020000058880A KR100287552B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system |
| KR1020000058873A KR100362995B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| KR1020000058882A KR100406692B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| KR1020000058863A KR100325679B1 (en) | 1993-09-16 | 2000-10-06 | Substrate holding system and substrate holding method |
| US09/778,780 US6544379B2 (en) | 1993-09-16 | 2001-02-08 | Method of holding substrate and substrate holding system |
| US09/849,405 US6524428B2 (en) | 1993-09-16 | 2001-05-07 | Method of holding substrate and substrate holding system |
| KR1020010026680A KR100406716B1 (en) | 1993-09-16 | 2001-05-16 | Substrate holding apparatus and vacuum handling appratus and substrate holding apparatus for vacuum handling appratus |
| US10/024,723 US6645871B2 (en) | 1993-09-16 | 2001-12-21 | Method of holding substrate and substrate holding system |
| KR1020020013791A KR100345207B1 (en) | 1993-09-16 | 2002-03-14 | Substrate holding system and substrate holding method |
| US10/107,353 US6610171B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| US10/107,352 US6610170B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| US10/107,138 US6676805B2 (en) | 1993-09-16 | 2002-03-28 | Method of holding substrate and substrate holding system |
| KR1020030021112A KR100454863B1 (en) | 1993-09-16 | 2003-04-03 | Apparatus for vacuum handling and method thereof |
| US10/437,309 US6899789B2 (en) | 1993-09-16 | 2003-05-14 | Method of holding substrate and substrate holding system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4828694A JP3186008B2 (en) | 1994-03-18 | 1994-03-18 | Wafer holding device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001035360A Division JP3505155B2 (en) | 2001-02-13 | 2001-02-13 | Wafer holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07263528A true JPH07263528A (en) | 1995-10-13 |
| JP3186008B2 JP3186008B2 (en) | 2001-07-11 |
Family
ID=12799199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4828694A Expired - Lifetime JP3186008B2 (en) | 1993-09-16 | 1994-03-18 | Wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3186008B2 (en) |
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| US6524428B2 (en) * | 1993-09-16 | 2003-02-25 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
| JP2004031665A (en) * | 2002-06-26 | 2004-01-29 | Ngk Spark Plug Co Ltd | Electrostatic chuck |
| US6846213B2 (en) | 2000-03-06 | 2005-01-25 | Canon Kabushiki Kaisha | Electron source, image display device manufacturing apparatus and method, and substrate processing apparatus and method |
| JP2005101505A (en) * | 2003-03-13 | 2005-04-14 | Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh | Mobile and transportable type electrostatic substrate holder |
| JP2005259870A (en) * | 2004-03-10 | 2005-09-22 | Nikon Corp | Substrate retainer, stage device, exposing device and exposing method |
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