JPH07263354A - Formation of plasma cvd film - Google Patents

Abstract

PURPOSE:To obtain a plasma CVD film forming method by which the properties of a CVD film, such as the electric characteristics, resistance to chemicals step coverage, etc., can be improved. CONSTITUTION:A device A1 to which a plasma CVD film forming method can be applied is constituted so that high-frequency power can be supplied by induction coupling and a liquid organic material can be used by vaporizing the material at such a ordinary temperature that a CVD process gas can maintain the chemical bond of alkoxide silicon (Si-O-CmHn) at the time of forming a plasma CVD film by generating plasma 10 by introducing a required CVD gas into a vacuum vessel 3 supplied with the high-frequency power and depositing a decomposition product formed by the plasma 10 on a sample 8 set in the vacuum vessel 3. Therefore, the properties of the plasma CVD film, such as the electric characteristics, chemical resistance, step coverage, etc., can be improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a plasma CVD film, for example, a method for forming a silicon oxide film used in the manufacturing stage of electronic parts, or a surface co-coating of metal or polymer resin material. The present invention relates to a method for manufacturing a silicon oxide film.

[0002]

2. Description of the Related Art Semiconductor manufacturing processes, liquid crystal displays, CCDs (charge coupled devices), H
The insulating film required in the manufacturing process of electronic parts such as magnetic heads and solar cells used in DD (hard disk drive) is designed to improve product reliability and reduce manufacturing costs.
Generally, it is deposited and formed at a low temperature of 500 ° C. or lower by the CVD method (chemical vapor deposition method). Moreover, it is required that the quality of the film is excellent. Here, the film quality refers to chemical resistance, electrical insulation, deposition shape characteristics (step coverage), etc. of the film. It is known that the insulating film formed by such a CVD method generally has better film quality when deposited and grown at high temperature than when deposited at low temperature. In addition, when a CVD film is deposited at a low temperature, by adding plasma energy to thermal energy, the CVD
A plasma CVD method that supports the reaction is effective. on the other hand,
When a silicon oxide film, which is a type of insulating film, is formed by the CVD method, the material is alkoxide silicon (Si-O-C).
_The method of vaporizing and using an organic material that has a bond of _m H _n ) and is liquid at room temperature is a commonly used material.
It has been reported that the step coverage of the formed deposited film is superior to the method using the iH ₄ —O ₂ system gas or the SiH ₄ —N ₂ O system gas (Electronic Materials 19
February 1991 (Characteristics of ethyl silicate and film formation mechanism by Takehiko Niki) etc.). Here, TEOS is one of the above alkoxide silicons, and is widely known as a material for forming a silicon oxide film by the CVD method.

Conventionally, high density and strong plasma support is not necessary for forming TEOS by the plasma CVD method.
It has been thought to be rather harmful. This is because it was thought that when the plasma was so strong that TEOS was completely decomposed in the gas phase, the step coverage of the deposited silicon oxide film was deteriorated and more impurities were taken into the film. . Therefore, conventionally, a parallel plate type plasma CVD apparatus has been used as a plasma generator. FIG. 7 shows a schematic configuration of such a conventional parallel plate type plasma CVD apparatus A0. In this conventional apparatus A0, a material gas (a gas that is a raw material for a deposited film) is introduced from a gas introduction port 1'into a vacuum container 3'which is evacuated from an exhaust port 2 '. Then, a current from a high frequency power source 7'is passed between the upper electrode 4'and the lower electrode 5'in the vacuum chamber 3'while matching is performed by a matching box 6 ', so that a plasma 10' is generated. The plasma 10 'generated here gives energy for causing a chemical reaction (deposition) to the material gas. In such a film formation method by plasma CVD, the energy required for the film formation reaction is supplemented by the plasma energy, so that the temperature applied from the heater 9'to the sample 8'at the time of film formation can be lowered. As a matching method between the upper electrode 4'and the lower electrode 5'of the conventional device A ₀ , specifically, a high frequency (13.56 MHz) via a capacitor having a variable capacitance is used.
A method of passing an electric current is generally used. The absolute pressure of the vacuum container 3'is about 1 Torr to 8 Torr. Further, the sample 8'to be subjected to film formation is fixed between the upper electrode 4'and the lower electrode 5 '. The film thickness is
It is controlled by whether or not a high frequency current is passed between both electrodes.

[0004]

In the conventional method for forming a plasma CVD film as described above, the reliability of the film quality (electrical characteristics) is not improved when the silicon oxide film using alkoxide silicon is deposited at a low temperature (about 500 ° C. or less). , Chemical resistance, etc.) and step coverage are excellent, but there is a problem in that a film forming condition and a film forming apparatus have not been found. Therefore, the use of the silicon oxide film by the plasma CVD film forming method is limited, and it is mainly used as an insulating film between metal wirings in the manufacturing process of semiconductors, CCD cameras, liquid crystal displays, and the like. It was Therefore, it has not been used much in the field where a high quality film such as a transistor element is required. In order to solve the problems in the conventional technique, the present invention provides a method for forming a plasma CVD film, which improves the method for forming a plasma CVD film and can improve the film quality such as electrical characteristics, chemical resistance, and step coverage. It is intended to be provided.

[0005]

In order to achieve the above object, the first aspect of the present invention is to produce a plasma by introducing a required CVD processing gas into a vacuum container into which high frequency power is input, and generate the plasma. In the method of forming a plasma CVD film in which the decomposed product is deposited on a sample placed in the vacuum container, the high frequency power is applied by inductive coupling, and the alkoxide silicon (Si-O-) is added to the CVD processing gas. It is configured as a method for forming a plasma CVD film, which is characterized in that an organic material which has a chemical bond of ₍ C _m H _n ) and is liquid at room temperature is vaporized and used. Furthermore,
This is a method for forming a plasma CVD film in which the CVD processing gas is a gas obtained by vaporizing a material represented by the chemical structural formula Si (O—C ₂ H ₅ ) ₄ of ethyl silicate (TEOS).

Further, the pressure in the vacuum container is set to about 0.0
It is a method of forming a plasma CVD film with a pressure of 1 to 2 Torr.
Further, it is a method of forming a plasma CVD film in which the temperature around the sample is from room temperature to about 300 ° C. Further, it is a method of forming a plasma CVD film in which the input power is about 50 to 2500 W / 15 ² πcm ² . A second aspect of the invention is to introduce a required CVD processing gas into a vacuum container into which high-frequency power is input to generate plasma, and decompose products generated by the plasma onto a sample placed in the vacuum container. In the method of forming a plasma CVD film to be deposited, the CV
The method for forming a plasma CVD film is characterized by adding xenon (Xe) or radon (Rn) to the D processing gas. Further, in the first invention, there is provided a method of forming a plasma CVD film, characterized in that xenon (Xe) or radon (Rn) is added to the CVD processing gas.

[0007]

According to the first aspect of the present invention, a required CVD processing gas is introduced into a vacuum container into which high-frequency power is applied to generate plasma, and a decomposition product generated by the plasma is placed in the vacuum container. CV to be deposited on the sample
At the time of forming the D film, the high frequency electrode is charged by inductive coupling, and the organic material which is liquid at room temperature and has the chemical bond of silicon alkoxide (Si—O—C _m H _n ) in the CVD processing gas is vaporized. Used. By this,
Film quality such as electrical characteristics, chemical resistance, and step coverage are improved. Further, when the CVD processing gas is a gas obtained by vaporizing a material represented by the chemical structural formula Si (O—C ₂ H ₅ ) ₄ of the product (TEOS), particularly good film quality is obtained. Furthermore, the pressure in the vacuum container is about 0.0
It is set to 1-2 Torr. Further, the temperature around the sample is from room temperature to about 300 ° C. Furthermore, the introduced power is about 50-
It is set to 2500 W / 15 ² πcm ² . A good film quality can be obtained under any of the above conditions. According to the second aspect of the invention, the required CVD processing gas is introduced into a vacuum container into which high-frequency power is input to generate plasma, and a decomposition product generated by the plasma is placed in the vacuum container. When forming the plasma CVD film to be deposited on the sample,
Xenon (Xe) or radon (Rn) is added to the CVD processing gas. By this addition, the film quality becomes better. Further, in the above-mentioned first invention, the CVD processing gas contains xenon (Xe) or radon (Rn).
It was found that the film quality is further improved even when is added.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below with reference to the accompanying drawings for the understanding of the present invention. The following embodiments are examples of embodying the present invention and are not intended to limit the technical scope of the present invention. Here, FIG. 1 shows the plasma CVD according to the first embodiment of the present invention.
FIG. 2 is a schematic diagram showing a schematic configuration of a plasma CVD apparatus A1 to which a film forming method can be applied, FIG. 2 is an example diagram showing an antenna shape of the plasma CVD apparatus A1, and FIG. 3 is a plasma CVD apparatus according to a second embodiment of the present invention. FIG. 4 is a schematic diagram showing a schematic configuration of a plasma CVD apparatus A2 to which a film forming method can be applied, FIG. 4 is a conceptual diagram of a matching box with an antenna, and FIG. 5 is a plasma CVD film forming method according to a third embodiment of the present invention. Schematic diagram showing a schematic configuration of a plasma CVD apparatus A3 applicable to
FIG. 6 is a chart showing comparative performance examples of various plasma CVD apparatuses. A method of forming a plasma CVD film according to the first invention is
Similar to the conventional example in that a required CVD processing gas is introduced into a vacuum container in which high-frequency power is input to generate plasma, and decomposition products generated by this plasma are deposited on a sample placed in the vacuum container. Is. However, in the first invention, the high frequency power is applied by inductive coupling, and the alkoxide silicon (Si--
This is different from the conventional example in that an organic material that has a chemical bond of ₍ O—C _m H _n ) and is liquid at room temperature is vaporized and used. As shown in FIG. 1, the plasma CVD apparatus A1 according to the first embodiment is an inductively coupled plasma generator (ICP) capable of embodying the above-mentioned first invention, and uses a material gas (corresponding to a CVD processing gas). A cylindrical vacuum container 3 having a gas introduction port 1 for introducing gas and an exhaust port 2 for vacuum exhaust, and a dielectric window formed on the central axis of the vacuum container 3 and made of transparent quartz glass. 4, an antenna 5 arranged near the outside of the window 4, a high-frequency power source 7 for supplying high-frequency power to the antenna 5 through a matching circuit 6, and a sample 8 on the central axis of the vacuum container 3. And a sample table 9 which can be moved up and down. Further, examples of the shape of the antenna 5 include the one loop shape shown in FIG. 2A and the spiral loop shape shown in FIG. 2B, and either one is adopted depending on the required performance.

The operation of the device A1 will be briefly described below. Material gas is introduced into the vacuum container 3 through the gas introduction port 1, and high frequency power is applied from the high frequency power supply 7 to the antenna 5. Then, an electromagnetic wave is radiated from the antenna 5 and a high frequency electric field is induced in the vacuum container 3. This high frequency electric field accelerates the electrons generated in the vacuum container 3 due to natural radiation or the like. The accelerated electrons collide with neutral atoms in the material gas and ionize the neutral atoms to generate ions and electrons. The electrons generated here are accelerated by the high frequency electric field. This repeats the process of generating ions and electrons. When the plasma density rises above a certain level by repeating this, the electron density in the plasma 10 rises and the response frequency of the electrons in the plasma rises.
At this time, the plasma 10 acts as if it were a conductor. That is, a current flows in the plasma as if the high frequency electric field is cut off. Then, it begins to block the electromagnetic waves. At this time, electromagnetic waves do not enter the inside of the plasma other than the special mode peculiar to the plasma, so only the plasma on the surface obtains the energy of the electromagnetic waves from the antenna 5 and further increases the plasma density. This phenomenon gradually diffuses into the plasma. The decomposition products generated by the plasma 10 generated as described above are deposited on the sample 8 to form a silicon oxide film. By moving the sample table 9 to an appropriate position, the film quality of the silicon oxide film can be formed with high quality.

Here, the principle of the device A1 will be described. It is generally known that ICP can create a plasma state with higher electron density and lower electron temperature than the parallel plate type plasma CVD apparatus A0 introduced in the conventional example (3rd Semiconductor Process Symposium: Sponsored Press Journal). (Comparison diagram of various plasma CVD devices introduced by Lam Research Coup., USA: see FIG. 6). However, TCP in the figure corresponds to ICP. This TCP (I
When CP) is used, the alkoxide silicon bond represented by ethyl silicate TEOS (Si—O—C _m H _n ) is
Inductive coupling (especially strongly affected by electrons and ions)
It is considered that a reaction mechanism is generated by which the chemical bond of O—C is selectively and efficiently cleaved.
That is, it is considered that oxygen radicals in the plasma are affected, but compared with the conventional parallel plate plasma generation mechanism, it is not necessary to create reaction conditions mainly for the influence of oxygen radicals (that is, oxygen Without adding),
A good quality silicon oxide film is formed. This is
It is suggested that ICP can be used as reaction supporting energy which can be replaced with heat not only for TEOS-CVD but also for CVD method of metal thin film of organic metal (copper, aluminum, tungsten, titanium, molybdenum, etc.) in the future. In addition, in the first embodiment described above, it is not always necessary to add the active gas to the material gas, but in reality, the effect of increasing the dissociation degree of the gas in the plasma is obtained by adding the inert gas. Known to be. Second
The invention was made with this point in mind, and the outline thereof is shown below.

The method of forming a plasma CVD film according to the second aspect of the present invention is a method for forming a desired CVD film in a vacuum container to which high frequency power is applied.
In forming a plasma CVD film in which a processing gas is introduced into a plasma and a decomposition product generated by the plasma is deposited on a sample placed in a vacuum container, the above-mentioned CVD is performed.
It is configured to add xenon (Xe) or radon (Re) to the processing gas. As mentioned above, addition of an inert gas is a well-known technique, but as the gas, conventionally, an inert gas such as hydrogen H ₂ , water vapor H ₂ O, argon Ar, neon Ne, or helium He is used alone or mixed. Was added. The present inventors have found through experiments that xenon He and radon Rn are more effective in improving the film quality of the silicon oxide film obtained by film formation than conventional inert gases such as argon Ar. . In other words, it was found that the inert gas to be added had a higher atomic number and was more desirable. An apparatus capable of embodying the second invention is shown below. As shown in FIG. 3, the plasma CVD apparatus A2 according to the second embodiment has the following features in addition to the apparatus A1 according to the first embodiment.

[0012] In the apparatus A2, has a part 4 _a, by changing the height H, it is possible to arbitrarily adjust the distance between the sample stage 9 and the dielectric window 4.
The material of the dielectric window 4 is quartz glass, parts _4a and _4b
Is made of an aluminum alloy (JISA5052). The quartz glass used had a diameter of 29 cm and a thickness of 2 cm. Further, here, a matching box 6 _a as shown in FIG. 4 (size: 40 cm × 40 cm × 15 cm) was used. The outer sides of the matching box 6 _a is formed in the aluminum plate, the outer upper is arranged reticulated aluminum frame 6 _b, is further disposed acrylic board 6 _c thereon. A hole having a diameter of 25 cm is formed in the lower part so that the antenna 5 can be accommodated therein. Dielectric window 4 below Thereby the outer upper part of the matching box 6 _a
Through, it is possible to observe the state of the plasma 10 and the sample 8. The spiral loop-shaped antenna 5 shown in FIG. 4 is formed by a 1/4 inch copper pipe, and the outermost diameter of the loop is 20 cm after 3 turns. Further, the sample table 9 on which the sample (wafer) 8 is placed is equipped with a heating mechanism (not shown) by a heat transfer wire and a temperature measurement and monitoring mechanism (not shown) for keeping the sample temperature constant. It can be heated up to about 400 ℃. The results of experiments conducted using this apparatus A2 will be described below. Here, a 6-inch silicon wafer is placed as a sample 8 in the vacuum container 3, and a material gas (corresponding to a CVD processing gas) in the vacuum container 3 is _supplied from the material gas introduction port 1 _{b through the} TE.
Introduce OS vapor. Also, carrier gas introduction port 1
introducing oxygen O ₂ than _a, it was assumed to form a silicon oxide film on the surface of the sample 8.

Here, the method of introducing TEOS vapor by argon Ar bubbling is known as "bubbling (vaporization supply)" in which vapor of a liquid material is vaporized and taken out.
Was used. TEOS used for this experiment
The bubbling device is a stainless steel closed container with an internal volume of about 500CC and temperature controlled at about 40 ℃.
The TEOS vapor was obtained by filling the liquid TEOS of C and flowing argon Ar of 1 to 200 CC. This T
In order to prevent the EOS vapor from being cooled and condensed again before it is introduced into the vacuum container 3, the temperature of the EOS vapor is controlled to about 70 to 80 ° C. The material gas flow rate is 5 to 60 sccm for argon r containing TEOS vapor from the material gas introduction port 1 _b .
0 to 200 sc of O ₂ from the carrier gas introduction port 1 _a
It was introduced while controlling each flow rate as cm. Vacuum exhaust before film formation in the vacuum chamber 3 and gas exhaust during film formation were performed by connecting a turbo pump (not shown) and a rotary pump in series. Growth pressure is 0.1-0.8 Torr
And the high frequency power introduced to the antenna 5 is 200W
.About.2 kW, the temperature of the sample 8 was controlled by the heating mechanism of the sample table 9, and was monitored by the temperature measuring and monitoring mechanism to form a film at a temperature of room temperature to 400.degree. The refractive index of the silicon oxide film formed under the above film forming conditions was 1.455, which was about the same value as that of the oxide film formed by the thermal CVD method. In addition, high-speed film formation with a film formation speed of 5000 Å / min was realized. The in-plane film formation distribution of the 8-inch silicon wafer was as good as 5%. The HF resistance (etch rate for HF aqueous solution) of the formed silicon oxide film is
It is better than the parallel plate plasma CVD that has been reported so far. Although the step coverage of the formed silicon oxide film varies depending on the film forming conditions, it is equal to or better than the conventionally reported parallel plate type plasma CVD.

Furthermore, under the above conditions, the same result was obtained when oxygen O ₂ and argon Ar were mixed as the carrier gas or only argon Ar was used. The above results are confirmed by this apparatus A2 and the plasma generation method. As described above, when a high molecular weight organic material such as alkoxide silicon is used in the conventional high-density plasma generation means, it is excellent. It has been considered that the film quality such as step coverage cannot be obtained, but the excellent results were obtained with this device. The results of the confirmation test, which is a further expansion of the above film formation conditions, are described below. First, of the above conditions, the minimum value of the pressure in the vacuum vessel was 0.1 Torr and the maximum value was 0.8 Torr. Here, the minimum value was 0.01 Torr and the maximum value was 2 Torr. The grounds for this are as follows. That is, the present inventors first confirmed that when ICP is used as the plasma source, plasma can be generated from about 0.0001 Torr on the low pressure side to about 30 Torr on the high pressure side. However, when ICP is used as a plasma source for CVD, if the pressure is 0.01 Torr or less, the film forming rate is too low, and therefore it cannot be used.
It has been found that extremely uniform plasma generation cannot be achieved at rr or more. As a result, the minimum value was set to about 0.01 Torr and the minimum value was set to about 2 Torr. The maximum value or the minimum value can be applied in combination with the minimum value or the minimum value in the above embodiment.

Next, the temperature condition is set to 400 ° C. or lower in the above embodiment, but it can be set to 500 ° C. The grounds for this are as follows. That is, in general, in a temperature environment of 630 ° C. or higher, TEOS undergoes self-dissociation reaction without conversion to plasma, resulting in formation of SiO 2. Therefore, although the effect of improving the film quality can be expected by increasing the temperature during the film formation, using a temperature of 500 ° C. or higher in the process significantly limits the applicable film forming steps. This is because, in general, in the semiconductor manufacturing process, a process of 500 ° C. or higher cannot be used after the aluminum wiring process is completed. Therefore, the normal temperature to 500 ° C. is the applicable range. However, depending on the material, it is required that the temperature is from room temperature to about 300 ° C. In this case, sufficient durability is guaranteed even when an aluminum material is used. By this,
The temperature condition was room temperature to about 300 ° C. Next, the value of high frequency power input is about 50 to 2500 W / 1 in the above embodiment.
It is said that it is 5 ² π cm ² , but the basis for this is 50 W /
This is because a weak plasma of 15 ² πcm ² or less is insufficient to obtain the film formation rate. The maximum value is
It is set to 2500 W / 15 ² πcm ² , but if it is more than this, plasma is too strong, so that many impurities such as carbon are mixed in the film. According to the experiments conducted by the present inventors, the best condition is about 1500 W / 15 ² πcm.
Turned out to be ² . By the way, although the ICP is used in each of the first and second embodiments, the present invention is not limited to this, and any inductively coupled plasma may be used. Therefore, the following third embodiment is also considered.

Next, the third embodiment will be described.
It As shown in FIG. 5, in the device A3 according to the third embodiment,
Is a cylindrical glass tube that is an insulator above the vacuum container 13.
14 is attached. Gas introduction in the upper part of the glass tube 14
Port 11_aIntroduce more carrier gas as plasma source
To do. The metal coil 15 wound around the glass tube 14 is
Connected to the high frequency power supply 17 via the
Has been. Applying high frequency power to this coil 15
As a result, plasma 20 of carrier gas is generated. Material
The feed gas is a ring-shaped gas introduced above the sample 18.
Port 11_bIntroduced from. Ring 11_cDispersed in the plane
The generated material gas is the ring 11_cPlasma 2 that has passed inside
It is decomposed by 0. This makes the ring 11_cBelow
A film is formed on the sample 18 placed on the sample table 19 of FIG. This
Also in the device A3 such as
It is possible to obtain the same effects as those shown in FIG.
In each of the above first to third embodiments, the alkoxide is used.
Silicon is chemically bonded to Si-O-C_mH_nShall be represented by
However, more specifically, the chemical structural formula Si-O-C ₂H_FiveAh
Ruiha Si-O-CH₃Either of these is possible. First
The illustrated ethyl silicate (TEOS) is an example of the former. Change
In addition, all of the above-mentioned first to third embodiments are induction-bonding such as ICP.
A combined plasma is used, which is shown in Figure 6.
ECR that can secure the same plasma density as ICP
Also, electron density (or ion energy) in plasma
Can be reduced and electron density can be increased
This is because. As described above, in the first to third embodiments,
Compared with the conventional example, all have electrical characteristics, chemical resistance, and step
Regarding film quality such as coverage
We were able to. As a result, semiconductors, CCDs,
Transistors in the manufacturing process of liquid crystal displays, etc.
Silicon oxide film can be used for manufacturing devices, etc.
It This will improve product performance and reliability.
You can

[0017]

Since the method of forming a plasma CVD film according to the present invention is configured as described above, it is more excellent in film quality such as electrical characteristics, chemical resistance, and step coverage than the conventional one. can do. As a result, the silicon oxide film can be used for manufacturing transistor elements and the like in the manufacturing process of semiconductors, CCDs, liquid crystal displays and the like. As a result, the performance and reliability of the product can be improved.

[Brief description of drawings]

FIG. 1 is a plasma CVD according to a first embodiment of the present invention.
The schematic diagram which shows the schematic structure of the plasma CVD apparatus A1 which can apply the film forming method.

FIG. 2 is an example diagram showing an antenna shape of a plasma CVD apparatus A1.

FIG. 3 is a plasma CVD according to a second embodiment of the present invention.
The schematic diagram which shows the schematic structure of the plasma CVD apparatus A2 which can apply the film forming method.

FIG. 4 is a conceptual diagram of a matching box with an antenna.

FIG. 5 is a plasma CVD according to a third embodiment of the present invention.
The schematic diagram which shows the schematic structure of the plasma CVD apparatus A3 which can apply the film forming method.

FIG. 6 is a chart showing comparative performance examples of various plasma CVD apparatuses.

FIG. 7 is a schematic view showing an example of a plasma CVD apparatus A0 to which a conventional plasma CVD film forming method can be applied.

[Explanation of symbols]

A1 to A3 ... Plasma CVD apparatus 1 ... Gas introduction port 2 ... Exhaust port 3 ... Vacuum container 4 ... Dielectric window 5 ... Antenna 6 ... Matching circuit 7 ... High frequency power source 8 ... Sample 9 ... Sample stand 10 ... Plasma

Claims (7)

[Claims] 1. A required CVD processing gas is introduced into a vacuum container into which high-frequency power is input to generate plasma, and a decomposition product generated by the plasma is deposited on a sample arranged in the vacuum container. gas in the formation method of the plasma CVD film, performs the inductive coupling the insertion of the high frequency power, an organic material liquid at room temperature having a chemical bond alkoxide silicon to the CVD process gas _{(Si-O-C m H} n) A method for forming a plasma-enhanced CVD film, which is characterized by being used. 2. The CVD processing gas is ethyl silicate (T
Plasma C of formula _{Si (O-C 2 H 5} ) according to claim 1, wherein a gas material obtained by vaporizing represented by ₄ EOS)
Method for forming VD film. 3. The pressure in the vacuum vessel is set to about 0.01-2.
The method of forming a plasma CVD film according to claim 1, wherein the plasma CVD film is Torr. 4. The temperature around the sample is from room temperature to about 300 ° C.
Plasma CVD according to any one of claims 1 to 3.
Method of forming a film. 5. The input power is approximately 50 to 2500 W / 1.
The method for forming a plasma CVD film according to claim 1, wherein the plasma CVD film has a thickness of 5 ² π cm ² . 6. A required CVD processing gas is introduced into a vacuum container to which high-frequency power is input to generate plasma, and a decomposition product generated by the plasma is deposited on a sample arranged in the vacuum container. In the method of forming a plasma CVD film, plasma C characterized by adding xenon (Xe) or radon (Rn) to the above CVD processing gas.
Method for forming VD film. 7. The xenon (Xe) is used as the CVD processing gas.
Alternatively, radon (Rn) is added to the plasma CVD film forming method according to claim 1.