JPH07260802A - Microdisplacement element, light deflector, scanning probe microscope, and information processor - Google Patents

Abstract

PURPOSE:To provide a warp-free rigid microdisplacement element with a flat plate driving gear. CONSTITUTION:A torsion lever type light deflector has a substrate 1 with an insulation layer 2 on the whole surface. A fixed electrode 3 is formed on the insulation layer 2. A lever 8, which serves as a rectangular mirror, is formed on the layer 2. One end of the lever 8 faces the fixed electrode 3 through a gap 4. Two beams 9 project on one straight line in the opposite directions each other from the lever 8 so that the lever 8 can be distorted. The beams 9 have supports 10 to hold the lever 8 on the insulation layer 2. The lever 8 has structures 11 to prevent the deformation and to strengthen its rigidity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a torsion lever type minute displacement element, an optical deflector, a scanning probe microscope, and an information processing apparatus.

[0002]

2. Description of the Related Art Recently, a scanning tunneling microscope (hereinafter referred to as "STM") has been known which can directly observe the electronic structure of surface atoms of a conductor [G. Binnig et a
l. Phys. Rev. Lett, 49, 57 (198
2)]. This STM can be measured with high resolution of a real space image regardless of whether it is single crystal or amorphous, and can be observed with low power without damaging the sample with current. Furthermore, since it operates in the atmosphere and can be used for various materials, it is expected to have a wide range of applications.

The STM is 1 nm in which a voltage is applied between a metal probe (hereinafter referred to as "probe") and a conductive substance.
This is because the tunnel current flows when the distance is approached to a certain degree. This tunnel current is very sensitive to changes in the distance between the two. By scanning the probe so that the tunnel current is kept constant, it is possible to read various kinds of information regarding the whole electron cloud in the real space. On this occasion,
The resolution in the in-plane direction is about 0.1 nm. Therefore, if the principle of STM is applied, it is possible to sufficiently perform high-density recording / reproducing on the atomic order (sub-nanometer).

For example, a thin film layer of a material having a memory effect with respect to the switching characteristics of voltage and current, for example, a thin film layer of π-electron organic compound or chalcogen compound is used as the recording layer,
A method of performing recording / reproducing by STM has been proposed (Japanese Patent Laid-Open No. 63-161552 and Japanese Patent Laid-Open No. 63-1).
61553). According to this method, if the recording bit size is 10 nm, 10 ¹² bit / cm ²
It is possible to record and reproduce large amounts of data.

The recording layer used for the recording medium may be made of any material as long as the information written in the recording layer can be detected by the tunnel current flowing between the probe electrode and the recording layer. . For example, in the case where recording is performed by forming unevenness on the surface, HOPG (Highly-O) is used.
Oriented-Pyrolithic-Graphi
te) Cleaved substrates, Si wafers, vacuum evaporated or epitaxially grown metal thin films of Au, Ag, Pt, Mo, Cu and the like, and glass metals such as Rh ₂₅ Zr ₇₅ , Co ₃₅ Tb _{65 and the} like. Examples of materials recorded by the electronic state of the surface include a thin film layer of amorphous Si, a π-electron organic compound, and a chalcogen compound. Furthermore, for the purpose of downsizing the device, it has been studied by a micromechanics technique to form a plurality of probe electrodes and an extremely small movable mechanism on a semiconductor substrate by using a semiconductor photolithography process. An electrostatic cantilever, a piezoelectric bimorph cantilever (see US Pat. No. 4,906,840), and the like have been proposed as typical micromachines used for the movable mechanism. These micromachines are manufactured by a semiconductor photolithography process, can be easily arrayed, and can be manufactured at low cost, and can be expected to have high-speed response by being miniaturized. In particular,
Since the electrostatic cantilever is displaced by a voltage applied from the outside due to electrostatic attraction, the electrostatic cantilever is capable of performing a large displacement compared with the size, as compared with a piezoelectric bimorph cantilever that is self-displaced.

Further, the flat plate portion formed on the both-supported beam is
A type (torsion lever type) that electrostatically drives by utilizing the torsional elasticity of a doubly supported beam has also been devised (Japanese Patent Laid-Open No. Hei 4).
-1948). Unlike the cantilever type, this method allows the flexural elasticity of the lever and the torsional elasticity of the beam to be set individually, so that an actuator having flexibility in rigidity and resonance frequency can be manufactured. Further, in the electrostatic cantilever, the tip of the lever is displaced in the direction of the substrate when a voltage is applied, so it is difficult to control the distance to the opposing medium, whereas in the torsion lever type, a voltage is applied. As a result, the tip of the lever is displaced in the direction opposite to the substrate, which is also advantageous in that the distance to the medium can be easily controlled.

Such a torsion lever type minute displacement element can be applied to an optical deflector and a minute mechanical switch in addition to the above-mentioned information processing apparatus. As an optical deflector which is a mechanical optical element using micromechanics technology, K. E. Torsional Scannin by Silicon proposed by Petersen
g Mirror (IBM J. RES.DEVELO
P. , Vol. 24. No. 5,9.1980, pp6
31-637) and the like.

[0008]

The torsion lever type micro displacement element as described above is manufactured by utilizing the semiconductor process technology and the thin film manufacturing technology. However,
A thin film formed by a vacuum evaporation method or a sputtering method has a residual stress that slightly changes depending on film formation conditions or the like, unlike a single crystal or the like. Therefore, the levers manufactured by these methods often warp due to the residual stress.

FIG. 8 shows how the conventional torsion lever type minute displacement element warps. The warpage as shown in this figure is caused by the difference in the internal stress between the upper and lower sides of the laminated film, or the variation in the stress distribution in the film thickness direction in the single-layer film, and these are controlled to manufacture a lever without the warpage. Is difficult.

The lever thus warped due to stress has the following problems. (1) In the case of a lever in which the distance between the electrodes of the driving portion is increased due to warping, a large voltage for driving must be taken. (2) As the mirror, the deflecting surface is not flat, and the amount of light deflected in a desired direction is reduced. (3) When driven at a high frequency, if the rigidity of the flat plate drive unit is low, the flat plate drive unit is deformed during driving, and it becomes difficult to accurately control the angle and the tip position.

Therefore, in view of the above-mentioned problems of the prior art, the present invention provides a micro-displacement element having a flat plate drive section without warpage and having large rigidity, an optical deflector, a scanning probe microscope, and an information processing apparatus. It is intended to be provided.

[0012]

SUMMARY OF THE INVENTION To achieve the above object, the present invention is directed to a flat plate movable portion rotatably supported by two beams on a substrate and having a gap between the flat plate movable portion and the flat plate movable portion. In the micro-displacement element having a driving means for rotating the part, a three-dimensional structure is formed on the flat plate movable part.

In this minute displacement element, the driving means applies a voltage between a fixed electrode provided on the substrate so as to face the flat plate movable portion and the flat plate movable portion, and thereby the flat plate movable portion. May be spatially rotationally displaced toward the fixed electrode, and the three-dimensional structure may be a columnar structure having a triangular cross section or a columnar structure having a hollow cross section. preferable.

An optical deflector using the flat plate movable part of any one of the minute displacement elements as a mirror also belongs to the present invention.

Furthermore, a probe for information input / output is provided on the flat plate movable part of any one of the above-mentioned minute displacement elements, and means for adjusting the distance between the probe and the sample medium to be observed, and the probe and the sample medium. A scanning probe microscope including at least a means for applying a voltage between the two belongs to the present invention.

In addition, a probe for inputting / outputting information is provided on the flat plate movable portion of any one of the minute displacement elements, and means for adjusting the distance between the probe and the recording medium and between the probe and the recording medium. An information processing apparatus including at least a means for applying a voltage to the circuit belongs to the present invention.

[0017]

According to the present invention having the above-mentioned structure, the three-dimensional structure is formed on the flat plate movable portion which is rotatably supported by the two beams on the substrate and has a gap between the two substrates. The rigidity of the entire flat plate movable part is increased. In particular, in the past, internal stress remained in the flat plate movable part when it was manufactured using the semiconductor process technology and thin film manufacturing technology, and warpage was generated in the flat plate movable part. Since the three-dimensional structure is formed on the movable portion, the flat plate movable portion does not warp.

Also, when the flat plate movable portion is rotationally driven at a high frequency by the driving means, the deformation of the flat plate movable portion is suppressed by the three-dimensional structure.

Further, when the three-dimensional structure is formed on the flat plate movable portion, the entire plane movable portion becomes heavy, which may cause deflection due to its own weight or require a large driving voltage. Is a columnar structure having a hollow structure in its cross section, the entire plane movable portion in which the three-dimensional structure is formed is reduced.

In addition, if the cross-sectional shape of the three-dimensional structure is triangular, the structure becomes stronger due to deformation, and this shape can be easily produced by crystal anisotropic etching.

The minute displacement element having such a structure can be applied to an optical deflector, a scanning probe microscope, and an information processing device.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a perspective view showing the structure of a torsion lever type optical deflector which is a first embodiment of the micro-displacement element of the present invention. FIG. 2 is a side view of the torsion lever type optical deflector shown in FIG.

As shown in FIG. 1, the torsion lever type optical deflector of the present embodiment has a substrate 1 having an insulating layer 2 on one surface.
And the fixed electrode 3 is formed on the insulating layer 2 of the substrate 1. A lever portion 8 serving as a flat plate movable portion, which serves as a rectangular plate-shaped mirror, is formed on the insulating layer 2, and one end portion of the lever portion 8 is located via the fixed electrode 3 and the void portion 4. In order to allow the lever portion 8 to be twisted and rotated, the lever portion 8 has two beams 9 projecting in a straight line in opposite directions, and the tips of the beams 9 are located on the insulating layer 2 respectively. It is a supporting portion 10 for supporting 8. Further, on the lever portion 8, the structure 1 for preventing the deformation of the lever portion 8 and reinforcing the rigidity of the lever portion 8 is provided.
1 is formed. The drive means of this embodiment employs an electrostatic drive type having a gap portion 4 between the fixed electrode 3 and the lever portion 8.

In the structure of such a torsion lever type optical deflector, the lever portion 8 is formed by applying a voltage to the fixed electrode 3.
One end of the beam is pulled toward the fixed electrode 3 and the beam 9 is twisted, so that the entire lever part 8 rotates about a straight axis connecting the two beams 9. Then, the light emitted to the surface of the lever portion 8 according to the inclination of the lever portion 8 serving as a mirror is reflected at a desired angle.

As for the shape of the structure 11, in order to prevent the warp of the lever portion 8 in the longitudinal direction, it is desirable to make a plurality of columnar structures which are long in the longitudinal direction of the lever portion 8 in contact with the lever portion 8. In particular, a shape satisfying the following two points is preferable. (1) It has a hollow structure. (2) The cross section is triangular.

First, since the minute displacement element is supported by two beams made of a thin film, if the weight of the entire lever portion is large, the minute displacement element is bent due to its own weight. In addition, a large driving voltage is required to drive a heavy object. Therefore, in order to reduce the weight of the structure, the shape of the hollow structure is preferable.

Secondly, in the case of a hollow columnar structure,
The cross-sectional shape is preferably a semicircle or triangle that is strong against deformation.

Next, a manufacturing process of the torsion lever type optical deflector of this embodiment will be described. 3A to 3D are vertical sectional views for explaining a manufacturing process of a torsion lever type optical deflector which is a first embodiment of the minute displacement element of the invention.

As shown in FIG. 3A, first, a silicon nitride film is formed on a substrate 1 made of Si by low pressure CVD (LPCV).
The insulating layer 2 was formed by depositing 3000 Å according to D). Next, a polysilicon film to be the fixed electrode 3 is formed by LPCVD to a thickness of 3000 Å, and then phosphorus (P) is injected by 1 × 10 ¹⁶ (ions / cm ² ) by an ion implantation method.
Diffusion treatment was performed for 1 hour in a nitrogen atmosphere at 00 ° C. As a result, the sheet resistance of polysilicon was 12 Ω / cm ² . Next, a photoresist is applied to the polysilicon film, and the photoresist is patterned using a photolithography process in which exposure and development are performed, and after patterning the polysilicon with a mixed aqueous solution of hydrofluoric acid and nitric acid, the resist is peeled off and fixed. The electrode 3 was formed. Next, a photoresist to be the sacrificial layer 5 is applied to a thickness of 3 μm, and the supporting portion 10 is formed.
(See FIG. 1) The portion of the sacrificial layer 5 that will become the target is patterned and removed.

Next, as shown in FIG. 3 (b), 3000 Å of aluminum (Al) was deposited on the photoresist by sputtering by the vacuum evaporation method. After that, a photoresist is applied and patterned, an etchant composed of a mixed aqueous solution of phosphoric acid, nitric acid, acetic acid and water is heated to 50 ° C. and Al is etched to form a beam 9 (see FIG. 1) and a lever portion 8. did.

Next, as shown in FIG. 3C, a photoresist of 2 μm was applied and patterned. The edge of the resist has an inverse taper shape and is used as a shadow mask 55 when depositing the structure 11. Next, using a vacuum vapor deposition method, vapor deposition is performed from an oblique direction of the substrate while rotating the substrate,
Al was deposited to 10 μm.

Next, as shown in FIG. 3D, the shadow mask 55 and the photoresist of the sacrificial layer 5 are removed by using acetone, and the structure 11 is formed by a lift-off method. An optical deflector could be obtained.

The torsion lever type optical deflector thus manufactured has a beam width of 3.5 μm and a length of 1 in FIG.
The length of the lever portion was 42 μm, and the length of the width was 30 μm. According to the present embodiment, a warp-free torsion lever type optical deflector can be obtained by using a thin film process. The torsion lever type optical deflector thus manufactured can be manufactured by forming an array in an extremely small size and light weight.
An insulating film for preventing a short circuit due to contact between the lever portion (mirror) made of Al and the fixed electrode may be provided on the fixed electrode or below the lever portion (mirror).

(Second Embodiment) FIG. 4 is a perspective view showing the structure of an STM probe which is a second embodiment of the microdisplacement element of the present invention.

As shown in FIG. 4, the STM probe of this embodiment includes a substrate 21 having an insulating layer 22 on one surface, and a fixed electrode 23 is formed on the insulating layer 22 of the substrate 21. Above the fixed electrode 23, the fixed electrode 23 and the void portion 2 are provided.
A lever portion 28 serving as a flat plate movable portion is formed via 4. In order to enable the lever portion 28 to be twisted and rotated, two beams 26 project in a straight line and in opposite directions to each other, and the tips of the beams 26 are located on the insulating layer 22. It is a supporting portion 27 for supporting 28. The driving means of this embodiment is the fixed electrode 3
The electrostatic drive type having the gap 4 between the lever and the lever 8 is adopted.

Further, on the lever portion 8, the upper electrode 25 for driving the lever portion, the probe 29 for information input / output, the probe wiring 30, and the lever portion 8 are prevented from being deformed, and the lever portion 8 is prevented from being deformed. A structure 11 is formed to reinforce the rigidity.

In the STM probe having such a structure, one end of the lever portion 8 is pulled to the fixed electrode 3 by applying a voltage to the fixed electrode 3 and the beam 9 is twisted and rotated, so that the entire lever portion 8 is divided into two. It rotates around a straight axis connecting the beams 9. Then, according to the inclination of the lever portion 8, the probe 29 formed on the lever portion 8 approaches the facing sample medium (not shown).

The shape of the structure 31 is the lever portion 28.
In order to prevent the warp in the longitudinal direction, it is desirable to make a plurality of columnar structures that are long in the longitudinal direction of the lever portion 28 in contact with the lever portion 28. Particularly, as in the first embodiment, a shape satisfying the following two points is preferable. (1) It has a hollow structure. (2) The cross section is triangular.

First, since the minute displacement element is supported by two beams made of a thin film, if the weight of the entire lever portion is large, the minute displacement element is bent due to its own weight. In addition, a large driving voltage is required to drive a heavy object. Therefore, in order to reduce the weight of the structure, the shape of the hollow structure is preferable.

Secondly, in the case of a hollow columnar structure,
The cross-sectional shape is preferably a semicircle or triangle that is strong against deformation. Particularly, in the case of a triangle, there is also a process advantage that a V-groove shaped mold can be easily produced by crystal anisotropic etching as described later.

Next, the manufacturing process of the STM probe of this embodiment will be described. FIG. 5 is a vertical cross-sectional view for explaining a manufacturing process of an STM probe which is a second embodiment of the micro displacement element of the present invention. FIG. 6 shows the second substrate 5 shown in FIG.
It is a figure which shows the etching pattern of 1.

As shown in FIG. 5A, first, a silicon nitride film is formed on a first substrate 21 made of Si by low pressure CVD.
The insulating layer 22 was formed by depositing 3000 Å by (LPCVD). Next, after applying a resist and patterning,
Sputtering method for Ti 50 Å, Pt 2000
Å Fixed electrode 23 by depositing and removing the resist
Was formed. Next, after depositing 20,000 liters of zinc oxide by a sputtering method, a photoresist was applied and patterned, and the zinc oxide was etched with a mixed aqueous solution of hydrogen peroxide and ammonia to form a sacrificial layer 32.

Next, as shown in FIG. 5 (b), silicon oxide was deposited at a rate of 10000Å by a sputtering method. Next, after applying a resist and patterning, 50 Å of Ti and 2000 Å of Au were deposited by a sputtering method, and the resist was removed to form the upper electrode 25 and the probe electrode 30 (see FIG. 4).

Next, as shown in FIG. 5C, after patterning silicon oxide with a resist, it is etched with CF ₄ gas by a reactive ion etching method to form a lever portion 28 and a beam 26 ( (See FIG. 4).

Further, since the probe 29 and the structure 31 shown in FIG. 4 are manufactured in a step different from the above step,
As shown in (d), a second substrate 51 made of Si on the azimuth plane (100) is prepared, and a silicon nitride film 52 is formed on the surface of the second substrate 51 by low pressure CVD (LPCVD).
0Å Accumulate.

Next, the silicon nitride film 52 formed on one of the surfaces of the second substrate 51 is removed by photoetching into the pattern shape shown in FIG.
Expose 1

Next, as shown in FIG. 5E, the second substrate 51 is processed by crystal anisotropic etching using a potassium hydroxide aqueous solution heated to 100 ° C., and the probe 29 is processed.
(See FIG. 4) The inverted pyramid-shaped probe recess 53 and the structure 31 (see FIG. 4) mold V
A groove-shaped recess 54 is formed.

Next, the remaining silicon nitride film on the surface of the second substrate 51 where the probe recess 53 and the structure recess 54 are formed is removed by reactive ion etching.

Next, as shown in FIG. 5 (f), the resist is patterned, and Au is added to 10000Å by a vacuum evaporation method.
A film is formed, and then the resist is dissolved with acetone to form an Au pattern to be the probe 29 and the structure 31.

Next, as shown in FIG. 5G, the probe 29 and the structure 31 are attached to the lever portion 28 of the first substrate 21.
Then, the structure 31 was transferred onto the first substrate 21 side by adhering it to the upper electrode 25, applying a weight, and peeling it from the interface between the second substrate 51 and the structure 31. By this method, the probe 29 can be transferred to the first substrate 21 side at the same time as the structure 31.

As the method for etching the second substrate 51, not only crystal anisotropic etching of single crystal silicon or GaAs semiconductor but also isotropic etching if it can be etched into a transferable shape. You can also Further, since the silicon nitride film 52 is a protective film when the second substrate 51 is etched, any film that can withstand the etching liquid at this time may be used. In addition, the structure 31
A peeling layer may be formed over the second substrate 51 in order to reduce the adhesion at the interface between the second substrate 51 and the second substrate 51. In addition, the joining method of the movable portion such as the lever portion 28 and the upper electrode 25 formed on the first substrate 21 and the structure 31 formed on the second substrate 51 is metal-metal joining, anodic joining, or the like. Can be used.

Finally, as shown in FIG. 5H, the zinc oxide sacrificial layer 32 is removed by etching with an aqueous acetic acid solution.
A gap 4 was formed between the lever 8 and the fixed electrode 3.

The torsion lever type STM probe shown in FIG. 4 could be obtained by the above manufacturing steps.

The STM probe of this embodiment also includes a drive circuit, a position control circuit, and a signal detection circuit which are manufactured on the same substrate by a semiconductor process.

In the STM probe manufactured in this example, the beam had a width of 5 μm and a length of 50 μm in FIG. 4, the lever portion longitudinal direction was 200 μm, and the width length was 100 μm.
Further, according to the present embodiment, by providing the structure on the lever portion, it was possible to fabricate the STM probe in which the lever portion is flat without the lever portion being curved due to the residual stress due to the process.

The STM probe of this embodiment is composed of a minute displacement element driven by electrostatic force, but the minute displacement element according to the present invention is not limited to the driving method by electrostatic force, and the attraction force by magnetic force is used. It is also conceivable to use a driving method using repulsive force or beam deformation due to heat.

(Third Embodiment) In this embodiment, an information processing apparatus using a plurality of STM probes of the second embodiment will be described.

FIG. 7 shows a block diagram of an information processing apparatus using an STM probe which is a second embodiment of the minute displacement element of the present invention.

In the information processing apparatus shown in FIG. 7, the doubly supported beam 6
A recording / reproducing head is constructed by arranging a plurality of STM probes having the same configuration as the second embodiment, which is composed of 2, the lever portion 63 and the probe 64, on the substrate 61. The substrate 61 is fixed to the XY stage 67,
The XY stage 67 can scan the STM probe together with the substrate 61 in the XY plane. As a scanning mechanism by the XY stage 67, a cylindrical piezo actuator, a parallel spring, a differential micrometer, a voice coil, an inch worm or the like is used.

The plurality of probes 64 are evenly arranged on the recording medium 6.
5 are arranged so as to face each other. Of the recording medium 65,
A base electrode 66 for applying a voltage between the recording medium 65 and the probe 64 is formed on the side surface opposite to the side where the probe 64 is arranged. The recording medium 65 has a convex shape (Staufer, Appl. Phys.
Letters, 51 (4), 27, July. 198
7, p.244) or concave (Heinzelman)
n, Appl. Phys. Letters, Vol. 5
3, No. 24 Dec. , 1988. (See p2447)
It is made of a metal, a semiconductor, an oxide, an organic thin film, or an organic thin film whose electric properties are changed (for example, an electric memory effect is generated) by the tunnel current. As the organic thin film whose electric characteristics change, the materials described in JP-A-63-161552 are used, and a Langmuir-Blodgett film (LB film) is used.
Is preferred.

For example, a base electrode 66 is formed on a quartz glass substrate.
As 50 liters of Cr deposited by vacuum vapor deposition method, and then 300 liters of Au deposited thereon by using the same method, on which four layers of SOAZ (squarylium-bis-6-octylazulene) were laminated by LB method Etc. are used.

Further, the information processing apparatus according to the present embodiment has a data modulating circuit 68 for modulating data to be recorded into a signal suitable for recording, and a signal modulated by the data modulating circuit 68 for the recording medium 65 and the probe 64. A recording voltage application device 69 for recording on the recording medium 65 by applying a voltage between them.
A recording signal detecting circuit 70 for applying a voltage between the probe 64 and the recording medium 65 to detect a tunnel current flowing between them, and a data demodulating circuit for demodulating the tunnel current signal detected by the recording signal detecting circuit 19. 71, a probe height detection circuit 72, a track detection circuit 73, and an x, z axis drive control circuit 7 for controlling the vertical movement of the probe 64.
4 has a recording / reproducing circuit 75.

In the information processing apparatus having such a configuration, when the probe 64 is brought close to the recording medium 65 up to a predetermined interval and a rectangular pulse voltage of 3 V and a width of 50 ns is applied by the recording voltage applying device 69, the characteristic of the recording medium 65 changes. Causes a portion with low electric resistance. XY stage 67
Information is recorded by performing this operation while scanning the surface of the recording medium 65 with the probe 64 by using.

At the time of reproduction, the probe 64 and the recording medium 65 are arranged at a predetermined interval and a DC voltage lower than the recording voltage, for example, 200 mV is applied between the probe 64 and the recording medium 65. In this state, the tunnel current signal detected by using the recording signal detection circuit 70 during scanning by the probe 64 along the recording data string on the recording medium 65 corresponds to the recording data signal.
Therefore, a reproduced data signal can be obtained by converting the detected tunnel current signal into a current-voltage value, outputting the result, and demodulating it by the data demodulation circuit 71.

The probe height detection circuit 72 receives the detection signal of the recording signal detection circuit 70, processes the remaining signal by cutting off the high frequency vibration component due to the presence or absence of the information bit, and the remaining signal value becomes constant. In this way, a command signal is transmitted to the x, z axis drive control circuit 74 in order to control the vertical movement of the probe 64. This keeps the distance between the probe 64 and the recording medium 65 constant.

The track detection circuit 73 is a circuit for detecting a path along which the data of the probe 64 should be recorded or a deviation from the recorded data string when the probe 64 scans the recording medium 65. .

In the recording / reproducing head, a recording / reproducing circuit 75 is provided for each of the plurality of probes 64 facing the recording medium 65 and its driving mechanism. Recording / reproducing by each probe 64, each probe Elements such as 64 displacement control (tracking, interval adjustment, etc.) are independently performed.

Although the above-mentioned embodiment is the information processing apparatus,
It goes without saying that the present invention can be applied to an information processing apparatus only for recording or reproduction, or a scanning probe microscope.

[0070]

Since the present invention is configured as described above, it has the following effects.

Since the invention according to claim 1 has a structure in which the three-dimensional structure is formed on the flat plate movable portion, it remains in the flat plate movable portion when it is manufactured by using the semiconductor process technology and the thin film manufacturing technology. The internal stress can be suppressed, and the flat plate movable part has no warp and has high rigidity.

According to a second aspect of the present invention, the driving means is of an electrostatic driving type, that is, a voltage is applied between the fixed electrode provided on the substrate so as to face the flat plate movable portion and the flat plate movable portion. When the configuration is such that the flat plate movable portion is spatially rotationally displaced toward the fixed electrode by this,
In addition to the effect of the invention described in (1), since there is no warp of the flat plate movable portion, the distance between the fixed electrode and the flat plate movable portion does not become large, and the drive voltage does not need to be increased more than necessary.

In addition to the effect of the invention described in claim 1 or 2, the invention described in claim 3 is stronger in deformation due to the shape of the three-dimensional structure being a columnar structure having a triangular cross section. It becomes a structure. Further, this shape can be easily produced by crystal anisotropic etching.

According to the invention described in claim 4, in addition to the effect of the invention described in claim 1 or 2, the shape of the three-dimensional structure is a columnar structure having a hollow structure in its cross section. The entire moving part does not need to be heavier than necessary.

The invention according to claim 5 is the invention according to any one of claims 1 to 4.
Since it is configured using the minute displacement element according to the invention described in any one of the above items, it is possible to manufacture an optical deflector having a deflection mirror having a predetermined flatness, which has the same effect as the above invention. .

The invention described in claim 6 is the invention according to claims 1 to 4.
Since the micro-displacement element according to the invention described in any one of 1 to 3 is used, it is possible to manufacture a scanning probe microscope having the same effect as that of the above-mentioned invention.

The invention according to claim 7 is the same as claims 1 to 4.
Since the minute displacement element according to the invention described in any one of the above items is used, it is possible to manufacture an information processing device having the same effect as the above invention.

[Brief description of drawings]

FIG. 1 is a perspective view showing a configuration of a torsion lever type optical deflector which is a first embodiment of a micro displacement element of the present invention.

FIG. 2 is a side view of the torsion lever type optical deflector shown in FIG.

FIG. 3 is a vertical cross-sectional view for explaining a manufacturing process of a torsion lever type optical deflector which is a first embodiment of the minute displacement element of the invention.

FIG. 4 is a second embodiment of the minute displacement element of the present invention S
It is a perspective view which shows the structure of a TM probe.

FIG. 5 is a second embodiment of the minute displacement element of the present invention S
FIG. 6 is a vertical cross-sectional view for explaining the manufacturing process of the TM probe.

6 is a diagram showing an etching pattern of the second substrate shown in FIG.

FIG. 7 is a second embodiment of the minute displacement element of the present invention S
The block diagram of the information processing apparatus using a TM probe is shown.

FIG. 8 is a diagram showing a state of warpage of a conventional torsion lever type minute displacement element.

[Explanation of symbols]

 1, 21 substrate 2, 22 insulating layer 3, 23 fixed electrode 4, 34 void part 5, 32 sacrificial layer 8, 28, 63 lever part (mirror) 9, 26 beam 10, 27 support part 11, 31 three-dimensional structure 25 upper electrode 29, 64 probe 30 wiring for probe 51 second substrate 52 silicon nitride film 54 concave portion for structure 55 shadow mask 62 doubly supported beam 65 recording medium 66 base electrode 67 XY stage 68 date Modulation circuit 69 recording voltage application device 70 recording signal detection circuit 71 data demodulation circuit 72 probe height detection circuit 73 track detection circuit 74 x and y axis drive control circuit 75 recording / reproducing circuit

Claims (7)

[Claims] 1. A micro displacement element having a flat plate movable portion rotatably supported on a substrate by two beams and having a gap between the flat plate movable portion and a driving means for rotationally driving the flat plate movable portion. In the micro displacement element, a three-dimensional structure is formed on the flat plate movable portion. 2. The driving means applies a voltage between a fixed electrode provided on the substrate so as to face the flat plate movable portion and the flat plate movable portion to move the flat plate movable portion to the fixed electrode. The micro-displacement element according to claim 1, wherein the micro-displacement element is spatially rotationally displaced toward. 3. The micro-displacement element according to claim 1, wherein the three-dimensional structure is a columnar structure having a triangular cross section. 4. The micro displacement element according to claim 1, wherein the three-dimensional structure is a columnar structure having a hollow structure in a cross section. 5. An optical deflector using the flat plate movable part of the minute displacement element according to claim 1 as a mirror. 6. A probe for information input / output is provided on a flat plate movable part of the micro displacement element according to claim 1, and a distance between the probe and a sample medium to be observed is adjusted. A scanning probe microscope comprising at least means and means for applying a voltage between the probe and the sample medium. 7. A means for adjusting the distance between the probe and a recording medium, comprising a probe for information input / output on a flat plate movable part of the minute displacement element according to claim 1. An information processing apparatus comprising at least a means for applying a voltage between a probe and the recording medium.