JPH07252662A - High purity composite material and production thereof - Google Patents

Abstract

PURPOSE:To form a high purity composite material having an optional shape and containing no impurities by heating the surface of a substrate under a chemical vapor phase reaction atmosphere by laser to partially deposite crystals and automatically moving the laser. CONSTITUTION:For example, in the case of forming a Si3N4 structure on a SiC substrate, Si3N4 is deposited by using 3SiH4+4NH3 as a gaseous starting material, irradiating the SiC substrate in the gaseous starting material atmosphere with an ArF excimer laser (ultraviolet ray having about 193nm wavelength) having about 10mum spot diameter and locally heating to about 900 deg.C. The composite material having the prescribed shape is formed by scanning the irradiation at about 1cm/sec and depositing Si3N4 successively on every surface. As a result, the high purity composite material containing 5-1000ppm impurities composed of an element and or a compound of at least one kind of fluorine, chlorine, iodine, astatine and hydrogen is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention requires high temperature resistance characteristics such as gas turbine materials (static / moving blades, combustors, etc.), fusion reactor wall materials, space materials (tile materials for space shuttles, etc.). The present invention relates to a manufacturing method applicable to heat-resistant component materials, structural members such as aircraft materials and internal combustion engine components that require strength and rigidity, and high-density wiring patterns of mounting materials.

[0002]

2. Description of the Related Art Development of high-temperature structural materials has become an essential technical issue for members such as gas turbines, fusion reactors, and aerospace equipment. Since these structural members are inevitably subjected to a large heat load and thermal shock, a ceramic material excellent in high temperature strength and thermal shock resistance is required.

Generally, as a method for producing high-strength ceramics, a sintering aid and a molding binder are added to powders of SiC, Si ₃ N _4, etc., and the mixed powders are subjected to press molding, injection molding, CIP molding, casting molding. Etc. are used to produce a molded product in the product shape. Then, the molded body is heat-treated at a high temperature and densified with shrinkage of 15 to 20% during sintering. Due to the shrinkage at the time of sintering, it is extremely difficult to sinter with high dimensional accuracy. Therefore, a large amount of processing is finally required, which causes an increase in cost. Further, since the glass phase exists in the grain boundary portion, there is a problem of reduction in high temperature strength. Further, there is a problem that the influence of impurities when mixing powders is unavoidable.

On the other hand, substrates such as alumina, mullite, and AlN are used in order to increase the speed and density of integrated circuits such as LSI. However, since these substrates are manufactured by atmospheric pressure sintering or glass melt sintering, they are likely to be deformed such as warped with shrinkage of 15 to 20% during sintering. Therefore, it was difficult to obtain the substrate having the designed dimensions.

Here, the CVD method is known as a thin film forming method. In this method, the entire substrate is maintained at a temperature at which it can be grown by CVD, and a crystal such as SiC or Si ₃ N ₄ is grown on the entire substrate. This method is effective for growing a crystal on the entire substrate, but it cannot selectively grow an arbitrary pattern.

[0006]

In order to obtain a high-temperature and high-strength member, it is necessary to make a structure having a clean grain boundary layer, that is, a so-called glass phase-free structure. For this purpose, it is desired to establish a technique for producing a structure without using powder, particularly a process capable of dealing with a product having a complicated shape.

The present invention pays attention to these problems, and provides an optimum process for producing a three-dimensional complex shape product and two-dimensional patterning treatment without using powder.

[0008]

Means for Solving the Problems As a result of intensive investigations by the present inventors as a process replacing the conventional powder molding method, C
It has been found that by combining the VD method and laser irradiation or plasma irradiation, it is possible to easily produce a three-dimensional complex-shaped product made of a high-purity inorganic compound. The complex shaped product does not mean a thin film, but an actual component shape having a step of two dimensions or more such as a blade of a gas turbine.
This can be achieved by incorporating laser irradiation or plasma irradiation in the CVD device. It is a method of precipitating crystals only in a portion heated by laser irradiation or plasma irradiation without heating the substrate. That is, in an atmosphere in which chemical vapor reaction can occur, the substrate surface is locally heated by laser or plasma, and the inorganic compound or metal is selectively grown only on the locally heated portion, and the laser or plasma is moved. This made it possible to produce an arbitrary pattern or a complicated shape product.

In the present invention, an arbitrary pattern or a complex shape product is produced and further subjected to high temperature sintering treatment,
It is possible to firmly bond the grain boundaries of the complex shaped product. For high temperature treatment, HP, HIP, gas pressure sintering, pressureless sintering, etc. can be used.

The laser or plasma can be moved by a method of moving the substrate or a method of moving the laser or plasma source. Also,
Plasma by microwave and ECR (electron cyclone resonance) can be used. The laser or plasma heating region is preferably in the range of 0.1 μm to 1000 μm. This is because when the size is larger than 1000 μm, the dimensional control of the shape due to crystal growth becomes poor. Further, when the heat capacity becomes large, it becomes difficult to control the dimensions due to the influence of heat conduction. The temperature due to heating of laser or plasma is
It is preferably in the range of 500 ° C to 2500 ° C.
The heating temperature is determined by the reaction temperature, melting point, etc. of the substance for crystal growth. The moving speed of the laser or plasma is preferably 1 m / s or less. This is because if it is faster than 1 m / s, the crystal growth becomes non-uniform and the structure has a mixture of voids. Also, 1 μm / s
When it is slower than the following, crystal growth locally occurs, and the structure also has voids. Therefore, a moving speed of 1 m / s to 1 μm / s is preferable to form a void-free structure. However, when the porous body is positively produced, it is not limited to this range.

Laser or plasma heating can be continuous, pulsed, or a combination of both. The pulse method is effective for preventing heat accumulation due to heating. It is effective to cool the substrate so that heat is not accumulated by heating the laser or plasma. Water cooling, air cooling, gas cooling or the like can be used for cooling. By combining microwaves with ECR (electron cyclone resonance), microwaves can be locally concentratedly heated in the direction perpendicular to the growth direction, which is effective for unidirectional sintering.

The gas used for CVD is determined by the deposited material. For example, W is WF ₆ + H ₂ + He, SiC is C
HF ₃ SiCl ₃ + H ₂ , TiC is TiCl ₄ + CH ₄ +
H ₂ and TaC are TaF ₅ + CH ₄ + H ₂ + He, B is BCl
₃ + H ₂ , TiN is TiCl ₄ + H ₂ + He, Al ₂ O ₃ is A
lCl ₃ + CO + H ₂ , SiO ₂ is SiH ₄ + O ₂ , TiO ₂
A gas component made of an element of a substance to be deposited such as Ti (OC ₃ H ₇ ) ₄ , BN is BCl ₃ + NH ₃ and HfB is HfCl ₃ + BCl ₃ may be used. The precipitation compound is composed of at least one of nitrides, carbides, oxides, carbonitrides, oxynitrides, borides, and silicides, and is composed of Si ₃ N ₄ , SiC,
SiO ₂ , AlN, AlC, Al ₂ O ₃ , TiN, TiC,
TiO ₂ , TiB ₂ , ZrN, ZrC, ZrO ₂ , Zr
B _2, becomes BN, B ₄ C, MgO, rare earth oxides,
By using ultrafine particles having a particle size of 100 nm or less, it is possible to manufacture a structure having extremely high strength. As shown in FIG. 10, when the particle shape of Si ₃ N ₄ is larger than 100 nm, the strength starts to decrease. On the other hand, if it is smaller than 5 nm, it is composed of an amorphous phase, so that it can be used as a thin film material but cannot be used as a structural material of a component shape. It is preferably composed of fine particles of 5 to 100 nm.

Here, it is necessary to reduce the amount of impurities of halogen elements or compounds such as F and Cl, which are gas components, to 1000 ppm or less, and it is impossible to reduce the amount of impurities to 5 ppm or less in the process. This is because, as shown in FIG. 11, when the amount of impurities in Si ₃ N ₄ exceeds 1000 ppm, the high temperature strength decreases. This is because the halogen element is easily replaced with oxygen and forms a glass phase having a low viscosity, which causes reduction in high temperature strength. Further, the presence of free elements such as hydrogen, carbon, and oxygen is not preferable in terms of high-temperature characteristics, so it is better not to contain them.

In the present invention, the grain size in the direction perpendicular to the substrate surface is 5 nm to 50 μm and the aspect ratio is 2 to 50.
The toughness can be improved by using the short fiber shape. As shown in FIG. 12, when the crystal grain size of Si ₃ N ₄ is larger than 50 μm, the strength becomes half or less. Further, it can be seen from FIG. 13 that the aspect ratio in the range of 5 to 50 is suitable for strengthening. From this, it can be seen that it is effective to improve the strength and toughness of the material by using a short fiber having a vertical grain size of 50 μm or less and an aspect ratio of 2 to 50. Further, in the present invention,
Since crystals can grow in the vertical direction of the substrate, it is possible to control the characteristics such as conductivity and thermal conductivity in one direction.

The deposited metals are Cu, W, Al, Si and Cr.
It is also possible to use at least one element or alloy of
The size and shape of this precipitated crystal layer can be controlled by the local heating temperature, the local heating holding time, and the pressure of the atmospheric gas.

At least one of ceramics, glass and metal can be used for the substrate. For example, nitride,
At least one of carbides, oxides, carbonitrides, oxynitrides, borides, and silicides, for example, Si ₃ N ₄ , SiC, SiO
₂ , AlN, Al ₂ O ₃ , TiN, TiC, TiO ₂ , Ti
B ₂ , ZrN, ZrC, ZrO ₂ , ZrB ₂ , BN, B
₄ C, rare earth oxides, mullite, etc. can be used. In order to improve the toughness of the present substrate, it is possible to use those reinforced with short fibers and long fibers. The long fiber or the short fiber can be reinforced by containing 10 to 70 vol%. In the case of a mounting material, it is preferable to use a substrate having a low dielectric constant. Further, it is also possible to remove the substrate by acid treatment or the like after producing the structure by this method.

In this process, a composite structure having an arbitrary shape can be produced by controlling the precipitation component. For example, short fibers, long fibers, or a combination of both can be deposited in a matrix of fine particles, and high toughness can be achieved. A fiber content of 5 to 70 vol% is suitable for high strength. If it is less than 5 vol%, there is no toughening effect, and if it is more than 70 vol%, the strength is significantly reduced.

In the present invention, since no sintering aid is used,
Since there is almost no glass phase or alloy phase at the fiber / particle or particle / particle interface, the strength does not decrease even in a high temperature range of 1500 ° C. or higher. The total amount of glass phase and alloy phase in the composite material for high temperature member obtained by the present invention is 1 wt%
The following is preferable.

Further, the obtained composite material is required to be chemically stable under the use environment. Depending on its components, the matrix may be oxidatively worn, especially in a high temperature atmosphere, but this can be prevented by pre-coating the composite material surface with a heat-resistant oxide ceramics. Therefore, the surface of the composite material of the present invention can be coated with an oxide ceramics.

[0020]

In the present invention, the surface of the substrate is locally heated by a laser or plasma in an atmosphere in which a chemical vapor reaction can occur, and an inorganic compound or metal is selectively grown only on the locally heated portion. Alternatively, by moving the plasma, a structure having an arbitrary pattern or a three-dimensional complex shape product can be manufactured. High-temperature structural members, mounting materials, etc. can be easily manufactured without mixing impurities.

[0021]

EXAMPLES Examples of the present invention will be specifically described below.

(Example 1) Si _{3 was produced} by the apparatus shown in FIG.
An N ₄ structure was prepared. 3SiH ₄ + 4N as source gas
H ₃ was used. ArF excimer laser (wavelength 193) having a spot diameter of 10 μm on a SiC substrate in the source gas atmosphere.
(nm ultraviolet ray) and locally heated to 900 ° C.
The irradiation was scanned at a rate of 1 cm / s, and deposition was sequentially performed on each flat surface to form a turbine blade shape as in the process of FIG.

In this material, fine particles of 100 nm Si ₃ N _{4 are used.}
It is composed of aggregates (impurities of 100 ppm or less), and there are no other inclusions between the particles. A bending test piece was cut out from this blade and subjected to a test.
It was found that the bending strength in the r atmosphere was 1420 MPa. Here, the irradiation diameter of the excimer laser and the scanning speed were changed to produce Si ₃ N ₄ structures having different crystal grain sizes. FIG. 10 shows the relationship between the crystal grain size and the bending strength of the obtained structure. As a result, the strength is reduced when the crystal grain size is 100 nm or more. Therefore, in order to obtain a high strength product, it is necessary to set the crystal grain size to 100 nm or less. Similarly,
Si ₃ N ₄ structures having different amounts of impurities were produced. The relationship between the impurity content and the bending strength of the obtained structure is shown in FIG. From this, since the strength becomes half or less when the impurity content is 1000 ppm, the impurity amount needs to be 1000 ppm or less.

Here, for the source gas, metal hydride, metal halide, metal acid / chloride, organometallic compound, etc. can be used. In order to prevent heat accumulation due to laser irradiation, it is also possible to cool by spraying He gas as shown in FIG.

The method described above is not limited to the shape of the moving blade, but various shapes such as a stationary blade and a combustor can be manufactured. The shape control can be automated by a computer by controlling the deposition rate and thickness.

In the present embodiment, the deposition position was changed by moving the laser, but the deposition position can be changed by moving the substrate. A combination of both is also possible. Furthermore, when it is desired to make a tilt, the three-dimensional shape can be easily manufactured by tilting the substrate side.

In this embodiment, as the laser, a source capable of locally heating such as a YAG laser, an infrared laser, a xenon laser, a CO ₂ laser, a ruby laser, an electron beam, an ion beam, a plasma beam, a microwave is used in addition to the excimer laser. be able to.

(Example 2) An example relating to the production of a composite structure will be described. The Si ₃ N ₄ / SiC composite structure was produced on a SiO ₂ glass substrate by the same device as in FIG. However, the structure was such that the piping for the source gas was multiplexed. As the raw material gas, two systems of 3SiH ₄ + 4NH ₃ for producing Si ₃ N ₄ and CHF ₃ SiCl ₃ + H ₂ for producing SiC were used. In the raw material gas atmosphere, the SiC substrate was irradiated with a YAG laser having a spot diameter of 5 μm and locally heated to 900 ° C. The irradiation was scanned at a rate of 1 cm / s, and deposition was sequentially performed on each flat surface to form a turbine blade shape as in the process of FIG. Here, supply of the source gas is 10
By changing at intervals of seconds, the Si ₃ N ₄ /
The SiC composite structure was deposited. It is possible to obtain a uniformly dispersed composite material having a structure in which Si ₃ N ₄ and SiC particles are bonded and a structure in which SiC particles are incorporated in Si ₃ N ₄ particles.

By removing the substrate of the obtained composite by acid treatment and then HIPing in nitrogen at 1800 ° C. and 100 atm, the bond strength between particles can be further increased. As a result, the strength at 1500 ° C is 16
It was found to have over 00 MPa.

Similar to the present embodiment, by controlling the gas source, Si ₃ N ₄ , SiC, SiO ₂ , AlN, Al
₂ O ₃ , TiN, TiC, TiO ₂ , TiB ₂ , ZrN, Z
Any compound such as rC, ZrO ₂ , ZrB ₂ , BN, B ₄ C, or a rare earth oxide can be deposited.

The laser source is not limited to ArF, and solid lasers, gas lasers, semiconductor lasers, excimer lasers, free electron lasers, etc. can be used depending on the type of medium. The oscillation output varies from 10 μW to 100 kW depending on the heating temperature and area. With pulse output,
Further, it can be used up to 100 TW.

(Example 3) In the method of Example 1, an intermittent method was carried out in which the laser irradiation time was maintained at a constant distance for 30 seconds. As a result, it was found that a fiber composite structure can be formed as shown in FIG. By such an intermittent method, Si ₃ N ₄ structures having different aspect ratios were manufactured.
Figure 1 shows the relationship between the aspect ratio and bending strength of the resulting structure.
3 shows. The crystal grain size is 100 nm to 2 μm in all cases
Is. From FIG. 13, it can be seen that the aspect ratio of 5 to 50 is effective for toughening. Further, FIG. 12 shows the relationship between the crystal grain size and the bending strength. In both cases, the aspect ratio is in the range of 1 to 3. From FIG. 12, it can be seen that the strength decrease is remarkable when the crystal grain size is larger than 50 μm. Therefore, in order to increase the toughness and strength, it is preferable that the crystal grain size is 50 μm or less and the aspect ratio is 5 to 50.

By applying this method, fibers having different shapes of different substances can be dispersed, so that a fiber-reinforced composite body can be prepared (FIG. 6). By dispersing short fibers in the matrix, the toughness of the matrix itself can be improved.

Furthermore, by combining with the second embodiment,
It is also possible to fabricate a composite material in which different materials are dispersed (Fig. 7).

The oscillation output varies from 10 μW to 100 kW depending on its heating temperature and area. With pulse output, up to 100 TW can be used. The pulse width can be arbitrarily changed from 1 μs.

(Example 4) By the same method as in Example 3, by changing the intermittent time, it becomes possible to deposit long fibers, and a so-called long fiber reinforced composite material can be obtained. However, in this case, since a structure in which a few percent of the voids remain remains, it is finally necessary to perform high temperature treatment by HIP, HP, pressureless sintering, or the like.

Example 5 An example of coating the surface of the composite material obtained in Example 1 with oxide ceramics and its effect will be described. Here, an example in which ZrO ₂ is coated will be mainly described. The produced composite material is ZrO
₂ Dip in slurry and dry, repeat this several times, then heat at 1400 ° C. for 1 hour to sinter ZrO ₂ . A ZrO ₂ coating layer having a thickness of 0.5 mm was obtained by the above method.

The resulting ZrO ₂ coated composite was
1500 ° C in air with uncoated composites
At 100 ° C., the sample was heated for 100 hours to perform an exposure test. As a result, the composite without coating had a weight loss of 3.0%, while the ZrO ₂ coating gave a weight loss of 0%. This is due to the effect of suppressing the surface oxidation by the oxide ceramic coating.

In addition to the above, SiO ₂ , Al ₂ O ₃ , B ₂ O ₃
The same effect was obtained when coating was performed. As the coating method, besides the method using the above-mentioned slurry, a chemical vapor deposition method, a sol-gel method, or the like can be used.

Example 6 A composite was prepared in the same manner as in Examples 1 to 4 by heating with plasma instead of laser. Although the irradiation beam diameter cannot be narrowed like a laser, it is possible to manufacture a structure composed of fine particles of about 5 μm. Furthermore, the moving speed of plasma is 1 m
A high-purity porous body can be prepared by increasing the speed to / s.

It is also possible to impregnate the high-purity crystalline porous body with a sintering aid and densify it by high temperature treatment. For example, a highly heat conductive material can be obtained by densifying a highly pure SiC porous body. in this way,
The characteristics of high-purity crystals can also be used.

Example 7 W was deposited as a wiring pattern on an Al ₂ O ₃ substrate by the device of Example 2. Further, Al ₂ O ₃ was deposited thereon, and W was deposited thereon, so that a multilayer substrate having 10 layers was produced. As the source gas, WF ₆ + He + H ₂ was used for W precipitation, and 2AlCl ₃ + 3CO ₃ + 3H ₂ was used for Al ₂ O ₃ precipitation. In this method, since shrinkage does not occur, extremely high-density wiring is possible, and since through holes can be formed from the beginning, no processing is required. Further, the combination of the deposition method by laser irradiation of the present invention and the conventional large-area film-forming method in which a substrate is heated is also possible.

Similarly, precipitation of metals and alloys other than W is possible.

Example 8 S in a Si ₃ N ₄ matrix
A composite structure in which iC has continuous paths was produced on a SiO ₂ glass substrate by the same device as in FIG. However, the structure was such that the piping for the source gas was multiplexed. 3SiH ₄ + 4NH ₃ and SiC for producing Si ₃ N ₄ are used as the source gas.
Two strains of CHF ₃ SiCl ₃ + H ₂ were used for production. Spot diameter 5μ on the SiC substrate in the source gas atmosphere
m xenon laser was irradiated and it heated locally at 900 degreeC. When the irradiation was scanned, SiC was sequentially deposited on each flat surface so that SiC would grow in the vertical direction, and the structure shown in FIG. 8 was produced. SiC with excellent thermal conductivity
By using a continuous body, the thermal shock of the structure can be improved. Similarly, a conductive path can be provided by growing TiN instead of SiC.

Example 9 S in a Si ₃ N ₄ matrix
A composite structure in which iC has continuous paths was produced on a SiO ₂ glass substrate by the same device as in FIG. However, the structure was such that the piping for the source gas was multiplexed. 3SiH ₄ + 4NH ₃ and SiC for producing Si ₃ N ₄ are used as the source gas.
Two strains of CHF ₃ SiCl ₃ + H ₂ were used for production. Spot diameter 5μ on the SiC substrate in the source gas atmosphere
m electron beam was irradiated and it heated locally at 900 degreeC.
When the irradiation is scanned, SiC is sequentially deposited on each plane so that SiC grows in the vertical direction, and the structure of FIG. 9 is formed at every 5 μm with a Si ₃ N ₄ film interposed. Was produced. By orienting the SiC particles in a short fiber shape in this manner, the toughness of the structure can be improved.

[0046]

INDUSTRIAL APPLICABILITY As described above, in a chemical vapor phase reaction atmosphere, the substrate surface is locally heated by laser, plasma or microwave to deposit crystals only on the heated portion, and the laser or plasma is automatically heated. It is possible to obtain a high-purity complex having an arbitrary shape by moving the complex. As a result, high-performance high-temperature components that have never been seen before,
The mounting material can be obtained.

[Brief description of drawings]

FIG. 1 is a diagram of a manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a manufacturing process diagram of a gas turbine rotor blade that is an embodiment of the present invention.

FIG. 3 is a manufacturing apparatus diagram showing another embodiment of the present invention.

FIG. 4 is a diagram of a composite structure which is an embodiment of the method of the present invention.

FIG. 5 is a composite structure view showing another embodiment of the method of the present invention.

FIG. 6 is a view of a composite structure which is another embodiment of the method of the present invention.

FIG. 7 is a composite structure diagram showing another embodiment of the method of the present invention.

FIG. 8 is a view of a composite structure which is another embodiment of the method of the present invention.

FIG. 9 is a view of a composite structure which is another embodiment of the method of the present invention.

FIG. 10 is a graph showing the relationship between crystal grain size and bending strength.

FIG. 11 is a relationship diagram between the impurity content and the bending strength.

FIG. 12 is a graph showing the relationship between crystal grain size and bending strength.

FIG. 13 is a relationship diagram between an aspect ratio and a fracture toughness value.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display area C23C 16/48 // D01F 9/08 Z

Claims (30)

[Claims] 1. A high-purity composite material characterized by comprising an inorganic compound having an impurity amount of 5 to 1000 ppm consisting of an element and / or compound consisting of at least one of fluorine, chlorine, iodine, astatine and hydrogen. 2. An inorganic compound having a directionality of 5 to 1000 ppm with an impurity amount of an element and / or compound of at least one of fluorine, chlorine, iodine, astatine and hydrogen. Purity composite. 3. The amount of impurities consisting of an element and / or compound consisting of at least one of fluorine, chlorine, iodine, astatine and hydrogen is 5 to 1000 ppm, and the particle size is 5 to 10.
A high-purity composite material characterized by being composed of an inorganic compound having a directivity of 0 nm. 4. A high-characteristic composition comprising two or more kinds of inorganic compounds having an impurity amount of 5 to 1000 ppm, which is composed of an element and / or compound consisting of at least one kind of fluorine, chlorine, iodine, astatine and hydrogen. Purity composite. 5. An element and / or compound consisting of at least one of fluorine, chlorine, iodine, astatine and hydrogen, which is composed of two or more kinds of inorganic compounds having a directionality of 5 to 1000 ppm. Characteristic high purity composite material. 6. The amount of impurities consisting of an element and / or compound consisting of at least one of fluorine, chlorine, iodine, astatine and hydrogen is 5 to 1000 ppm, and the particle size is 5 to 10.
A high-purity composite material characterized by being composed of two or more kinds of inorganic compounds having a directivity of 0 nm. 7. The inorganic compound according to any one of claims 1 to 6 is characterized by comprising at least one of nitride, carbide, oxide, carbonitride, oxynitride, boride, and silicide. High-purity composite material. 8. The inorganic compound according to any one of claims 1 to 6 is Si ₃ N ₄ , SiC, SiO ₂ , AlN, Al.
C, Al ₂ O ₃ , TiN, TiC, TiO ₂ , TiB ₂ , Z
rN, ZrC, ZrO ₂ , ZrB ₂ , BN, B4C, Mg
A high-purity composite material comprising a composite of at least one of O and a rare earth oxide. 9. A high-purity composite material, wherein the inorganic compound according to any one of claims 1 to 5 is composed of particles having a particle diameter of 5 nm to 100 μm. 10. The high-purity composite material according to claim 1 or 6, having a particle size of 5 nm grown in a direction perpendicular to the substrate surface.
A high-purity composite material containing 5 to 70 vol% of a short fibrous inorganic compound having an aspect ratio of 2 to 50. 11. In the step of producing a ceramics composite by a CVD method, a substrate surface is locally heated by a laser in an atmosphere in which a chemical vapor reaction can occur, and an inorganic compound or metal is only applied to the locally heated portion. By selectively growing and moving the laser, any 2
A method for producing a high-purity composite material, which is capable of producing a three-dimensional pattern or a three-dimensional shape product. 12. In the step of producing a ceramic composite by the CVD method, the substrate surface is locally heated by plasma in an atmosphere in which a chemical vapor reaction can occur, and an inorganic compound or metal is only applied to the locally heated portion. By selectively growing and moving the plasma, any 2
A method for producing a high-purity composite material, which is capable of producing a three-dimensional pattern or a three-dimensional shape product. 13. In the step of producing a ceramic composite body by the CVD method, a substrate surface is locally heated by a laser in an atmosphere in which a chemical vapor reaction can occur, and an inorganic compound or a metal is only applied to the locally heated portion. By selectively growing and moving the laser, any 2
A method for producing a high-purity composite material, which comprises producing a three-dimensional pattern or a three-dimensional shape product and performing high-temperature sintering. 14. In a step of producing a ceramics composite by a CVD method, a substrate surface is locally heated by plasma in an atmosphere in which a chemical vapor reaction can occur, and an inorganic compound or a metal is only applied to a locally heated portion. By selectively growing and moving the plasma, any 2
A method for producing a high-purity composite material, which comprises producing a three-dimensional pattern or a three-dimensional shape product and performing high-temperature sintering. 15. The movement of the laser or plasma according to any one of claims 11 to 14 comprises a method of moving a substrate, a method of moving a laser or plasma generation source, and a combination of both. High-purity composite material manufacturing method. 16. The laser or plasma heating region according to claim 11, wherein the heating region is 0.1 μm.
To 1000 μm, a method for producing a high-purity composite material. 17. The temperature for heating the laser or plasma according to claim 11 is 50.
A method for producing a high-purity composite material, which is in the range of 0 ° C to 2500 ° C. 18. A method for producing a high-purity composite material, wherein the moving speed of the laser or plasma according to claim 11 is 1 m / s to 1 μm / s. 19. A process for producing a high-purity composite material, characterized in that the heating of the laser or plasma according to any one of claims 11 to 14 comprises a continuous method, a pulse method, or a combination of both. 20. The inorganic compound according to claim 11, which is a nitride, a carbide, an oxide, a carbonitride,
A method for producing a high-purity composite material, which comprises at least one of oxynitride, boride, and silicide. 21. The inorganic compound according to claim 11, which is Si ₃ N ₄ , SiC, SiO ₂ or Al.
N, AlC, Al ₂ O ₃ , TiN, TiC, TiO ₂ , T
iB ₂ , ZrN, ZrC, ZrO ₂ , ZrB ₂ , BN, B ₄
A method for producing a high-purity composite material, which comprises a composite of at least one of C 2, MgO, and a rare earth oxide. 22. A method for producing a high-purity composite material, wherein the inorganic compound according to any one of claims 11 to 14 has a particle size of 5 nm to 100 μm. 23. A short fibrous inorganic compound having a particle size of 5 nm to 50 μm and an aspect ratio of 2 to 50 grown on the high purity composite material according to claim 11 in a direction perpendicular to the substrate surface. A method for producing a high-purity composite material, characterized by containing 5 to 70 vol%. 24. A method for producing a high-purity composite material, wherein the metal according to any one of claims 11 to 14 comprises at least one element of Cu, W, Al, Si and Cr and an alloy thereof. 25. A method for producing a high-purity composite material, characterized in that the substrate according to any one of claims 11 to 14 is made of at least one of ceramics, glass and metal. 26. The substrate according to any one of claims 11 to 14 is characterized by comprising at least one of nitride, carbide, oxide, carbonitride, oxynitride, boride, and silicide. High-purity composite material manufacturing method. 27. The substrate according to claim 11, wherein the substrate is Si ₃ N ₄ , SiC, SiO ₂ , AlN, Al _2.
O ₃ , TiN, TiC, TiO ₂ , TiB ₂ , ZrN, Z
A method for producing a high-purity composite material, which comprises at least one of rC, ZrO ₂ , ZrB ₂ , BN, B ₄ C, and a rare earth oxide. 28. A method for producing a high-purity composite material, wherein the high temperature treatment according to claim 13 or 14 comprises HP, HIP, gas pressure sintering, and pressureless sintering. 29. A method for producing a high-purity composite material, characterized in that a microwave is used instead of the laser or plasma according to any one of claims 11 to 14. 30. A turbine component and a mounting component made of the high-purity composite material according to any one of claims 1 to 30.