JPH07243981A - Switching control method for foreign matter detection threshold value - Google Patents
Switching control method for foreign matter detection threshold valueInfo
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- JPH07243981A JPH07243981A JP6200394A JP6200394A JPH07243981A JP H07243981 A JPH07243981 A JP H07243981A JP 6200394 A JP6200394 A JP 6200394A JP 6200394 A JP6200394 A JP 6200394A JP H07243981 A JPH07243981 A JP H07243981A
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- Prior art keywords
- foreign matter
- light
- threshold value
- pattern
- focusing
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、異物検査装置におけ
る異物検出閾値の切り換え制御方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a foreign matter detection threshold value switching control method in a foreign matter inspection apparatus.
【０００２】[0002]
【従来の技術】ＩＣチップが形成されたウエハ（パター
ン付きウエハ）は、異物が付着すると性能が劣化するの
で、異物検査装置により異物の有無が検査される。図３
は異物検査装置の要部の基本構成を示す。被検査のパタ
ーン付きウエハ１は、図示しない移動テーブルに吸着さ
れてＸまたはＹ方向に移動する。これに対して検査光学
系２が設けられ、ウエハ１の表面に対してレーザ光源21
よりレーザビームＬT が投射されて走査される。この走
査により、ＩＣチップ11のパターンとこれに付着した異
物はレーザビームＬT を散乱し、散乱光ＬR は集光レン
ズ22により集光され、さらに結像レンズ23により、パタ
ーンと異物の映像は、合焦点に設けたＣＣＤセンサなど
の受光器（本稿では合焦受光器とする）24に結像され
る。合焦受光器24の受光信号はコンパレータ３に入力
し、これに設定されている閾値Ｖに比較されて異物が検
出され、異物データが出力される。2. Description of the Related Art A wafer (patterned wafer) on which an IC chip is formed deteriorates in performance if foreign matter adheres to it. Figure 3
Shows the basic configuration of the main part of the foreign matter inspection device. The patterned wafer 1 to be inspected is attracted to a moving table (not shown) and moves in the X or Y direction. On the other hand, the inspection optical system 2 is provided, and the laser light source 21 is provided on the surface of the wafer 1.
A laser beam L T is projected and scanned by the laser beam. By this scanning, the pattern of the IC chip 11 and the foreign matter attached thereto scatter the laser beam L T , the scattered light L R is condensed by the condenser lens 22, and the image of the pattern and the foreign matter is further condensed by the imaging lens 23. Is imaged on a light-receiving device (a focusing light-receiving device in this paper) 24 such as a CCD sensor provided at a focusing point. The light reception signal of the focusing light receiver 24 is input to the comparator 3, is compared with the threshold value V set therein, and the foreign matter is detected, and the foreign matter data is output.
【０００３】図４により、ＩＣチップ11の散乱光ＬR
と、受光器24の受光信号をやや詳細に説明する。図４
(a) において、ＰＴはＩＣチップ11のパターンを、Ｎは
パターンＰＴのない無地部分をそれぞれ示す。付着異物
ｅの例として、ｅP はパターンＰＴの付着異物とし、ｅ
N,ｅN'は無地部分Ｎの付着異物とする。これらに対して
レーザビームＬT をＸ方向に走査すると、それぞれの映
像は合焦受光器24に結像され、これより(b) に示す受光
信号Ｓが出力される。受光信号Ｓの波形には、パターン
ＰＴに対応した波形があり、これに異物ｅP のパルスｐ
P が重畳している。また無地部分Ｎにはレベルの低いノ
イズがあり、このノイズに各異物ｅN,ｅN'に対応したパ
ルスｐN,ｐN'が重畳している。仮に異物ｅN'が微小のと
きは、そのパルスｐN'の波高値も微小である。According to FIG. 4, scattered light L R of the IC chip 11
Then, the light reception signal of the light receiver 24 will be described in some detail. Figure 4
In (a), PT indicates a pattern of the IC chip 11, and N indicates a plain portion without the pattern PT. As an example of the adhered foreign matter e, e P is the adhered foreign matter of the pattern PT, and e
N and e N 'are foreign matter attached to the plain portion N. When the laser beam L T is scanned in the X direction with respect to these, the respective images are imaged on the focusing light receiver 24, and the light reception signal S shown in (b) is output from this. The waveform of the light receiving signal S, there is a waveform corresponding to the pattern PT, the pulse p of the foreign matter e P thereto
P is superimposed. Also the solid portion N has a low noise level, the foreign substances e N to the noise, e N 'pulses p N corresponding to, p N' is superimposed. If the foreign matter e N 'is minute, the pulse crest value of the pulse p N ' is also minute.
【０００４】[0004]
【発明が解決しようとする課題】上記の受光信号Ｓに対
して、従来は、コンパレータ３に対して、図４(b) に示
すパターン波形の波高値よりやや大きい閾値Ｖa が設定
されており、閾値Ｖa によりパターン波形は除去され、
これに重畳した異物パルスｐN が検出される。しかし、
微小異物ｅN'のパルスｐN'は検出されない。これを検出
するには、その波高値より小さくノイズより大きい閾値
Ｖb をコンパレータ３に設定する必要がある。しかしこ
の閾値Ｖb では、パターン波形も検出されるので、走査
に従って、パターン波形に対しては閾値Ｖa とし、無地
部分Ｎに対して閾値Ｖb に切り換えることが必要であ
る。この発明は、上記に鑑みてなされたもので、パター
ン波形と無地部分に対する閾値Ｖa とＶb を切り換えて
コンパレータに設定する、異物検出閾値の切り換え制御
方法を提供することを目的とする。With respect to the above received light signal S, conventionally, a threshold value V a which is slightly larger than the peak value of the pattern waveform shown in FIG. 4B is set for the comparator 3. , The threshold V a removes the pattern waveform,
The foreign matter pulse p N superimposed on this is detected. But,
The pulse p N 'of the minute foreign matter e N ' is not detected. In order to detect this, it is necessary to set a threshold value V b smaller than the peak value and larger than noise in the comparator 3. However, in the threshold V b, since even pattern waveform is detected, according to the scanning, and the threshold V a for pattern waveform, it is necessary to switch the threshold V b relative to uncoated portion N. The present invention has been made in view of the above, and an object thereof is to provide a foreign matter detection threshold value switching control method for switching threshold values Va and Vb for a pattern waveform and a plain portion and setting them in a comparator.
【０００５】[0005]
【課題を解決するための手段】この発明は異物検出閾値
の切り換え制御方法であって、前記の異物検査装置に対
して、レーザビームの散乱光を分岐するハーフミラー
と、分岐された散乱光に対する結像レンズ、および結像
レンズの非合焦点に配置された非合焦受光器よりなる非
合焦受光系を設ける。合焦受光器と非合焦受光器のそれ
ぞれの検出信号の有無を判定条件とする。パターンと無
地部分のそれぞれに対する閾値Ｖa と閾値Ｖb とを、予
め切り換え回路に設定し、判定条件に従って、切り換え
回路により閾値Ｖa とＶb とを切り換えてコンパレータ
に設定するものである。上記において、非合焦受光器に
は微小異物が結像されず、微小異物に対する受光信号を
"無" とし、両受光器は、パターンに対してそれぞれ受
光信号を出力してともに "有" とし、無地部分に対して
それぞれ検出信号を出力せずともに "無" とする。各受
光信号の "有" と "無" とにより判定条件を構成する。SUMMARY OF THE INVENTION The present invention is a foreign matter detection threshold value switching control method, comprising: a half mirror for branching scattered light of a laser beam to the foreign matter inspection apparatus; An unfocused light receiving system including an imaging lens and an unfocused light receiver arranged at a nonfocusing point of the imaging lens is provided. The presence / absence of detection signals from the in-focus light receiver and the out-of-focus light receiver is used as the determination condition. The threshold value V a and the threshold value V b for each of the pattern and the plain portion are set in the switching circuit in advance, and the threshold value V a and V b are switched by the switching circuit according to the determination condition and set in the comparator. In the above, the minute foreign matter is not imaged on the non-focus receiver, and the received light signal for the minute foreign matter is
"No", both receivers output the light-receiving signal to the pattern, and set both to "yes", and do not output the detection signal to the plain part, and both to "no". Judgment conditions are composed of "Yes" and "No" of each received light signal.
【０００６】[0006]
【作用】まず合焦受光器と非合焦受光器の作用について
説明する。合焦受光器は、その結像レンズの合焦点に配
設されているので、ＩＣチップのパターンと、パターン
および無地部分の付着異物の映像は、すべて良好に結像
され、それぞれに対する検出信号を出力する。これに対
して非合焦受光器は、その結像レンズの非合焦点に配設
されているので、各付着異物、特に微小異物の映像は焦
点ボケして結像されず、従ってこれらに対する検出信号
は出力されない。しかし、パターンは散乱光の強度が十
分強いので、その映像は焦点ボケはするが、とにかく非
合焦受光器に結像され、これに対する検出信号が出力さ
れる。また、無地部分に対して両受光器はともに検出信
号を出力しない。このような両受光器の検出信号の出力
の有無により、パターンと無地部分を判定することが、
この発明の着眼点である。上記の切り換え制御方法にお
いては、合焦受光器と非合焦受光器のそれぞれの検出信
号の有無を判定条件とし、予め切り換え回路に設定され
たパターンと無地部分のそれぞれに対する閾値Ｖa とＶ
b とが、判定条件に従って、切り換え回路により切り換
えられてコンパレータに設定される。閾値Ｖa によりパ
ターンの波形は除去され、これに重畳している付着異物
のパルスが検出され、また閾値Ｖbにより、無地部分の
付着異物のパルスが検出される。判定条件は、非合焦受
光器には微小異物が結像されないので、これに対する受
光信号を "無" とし、また、両受光器は、パターンに対
してそれぞれ受光信号を出力するので、ともに "有" 、
無地部分に対してそれぞれ検出信号を出力しないので、
ともに "無" として、各受光信号の "有" と "無" とに
より構成される。The operation of the focusing light receiver and the non-focusing light receiver will be described first. Since the focusing receiver is disposed at the focal point of the imaging lens, the IC chip pattern and the image of the foreign matter adhering to the pattern and the plain portion are all well imaged, and the detection signal for each is obtained. Output. On the other hand, since the non-focusing receiver is arranged at the non-focusing point of the imaging lens, the image of each adhering foreign substance, especially the minute foreign substance, is out of focus and is not imaged. No signal is output. However, since the intensity of scattered light is sufficiently strong in the pattern, the image is defocused, but anyway, it is imaged on the non-focus receiver and the detection signal for it is output. Further, neither of the light receivers outputs a detection signal for the plain portion. It is possible to determine the pattern and the plain part by the presence or absence of the output of the detection signals of both the light receivers.
This is the focus of the present invention. In the above switching control method, the presence or absence of the detection signal of each of the in-focus light receiver and the out-of-focus light receiver is used as the determination condition, and the threshold values V a and V for the pattern and the plain portion set in advance in the switching circuit are set.
b and b are switched by the switching circuit according to the determination condition and set in the comparator. The waveform of the pattern is removed by the threshold value V a, the pulse of the adhering foreign matter superimposed on the waveform is detected, and the pulse of the adhering foreign matter in the plain portion is detected by the threshold value V b . As for the judgment condition, since the minute foreign matter is not imaged on the non-focused photodetector, the photodetection signal for this is set to "none", and both photodetectors output the photodetection signal for each pattern, so both Existence ",
Since the detection signal is not output for each plain part,
Both are "absent" and are configured by "existence" and "absence" of each received light signal.
【０００７】[0007]
【実施例】図１は、この発明の一実施例における異物検
査装置１０構成を示し、図２は、異物検査装置１０の作
用説明図である。図１に示す異物検査装置１０は、前記
した図３の異物検査装置に対して、非合焦受光系４と閾
値切り換え部５を設ける。なお、図３と同一構成要素は
同一番号とする。非合焦受光系４は、集光レンズ22と結
像レンズ23の中間に配設されたハーフミラー41と、その
反射方向に設けた結像レンズ42、および非合焦受光器43
よりなる。結像レンズ23と合焦点（受光器24）の距離ｄ
1 とし、結像レンズ42と非合焦受光器43の距離ｄ2 を、
ｄ1 より小さいか、または大きくして非合焦とする。つ
ぎに閾値切り換え部５は、アンプ51, 52と、切り換え回
路53よりなり、切り換え回路52には、ＩＣチップのパタ
ーンＰＴの波形に対する閾値Ｖa と、ウエハ１の無地部
分Ｎに対する閾値Ｖb とが、予め設定される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the structure of a foreign matter inspection apparatus 10 according to an embodiment of the present invention, and FIG. 2 is an explanatory view of the operation of the foreign matter inspection apparatus 10. The foreign matter inspection apparatus 10 shown in FIG. 1 is provided with a non-focused light receiving system 4 and a threshold switching unit 5 in addition to the foreign matter inspection apparatus of FIG. The same components as those in FIG. 3 have the same numbers. The non-focus light receiving system 4 includes a half mirror 41 disposed between the condenser lens 22 and the image forming lens 23, an image forming lens 42 provided in the reflection direction thereof, and a non-focus light receiving device 43.
Consists of. Distance d between the imaging lens 23 and the focal point (light receiver 24)
1 , the distance d 2 between the imaging lens 42 and the out-of-focus light receiver 43 is
It is smaller or larger than d 1 to make it out of focus. Next, the threshold value switching unit 5 includes amplifiers 51 and 52 and a switching circuit 53. The switching circuit 52 has a threshold value V a for the waveform of the pattern PT of the IC chip and a threshold value V b for the plain portion N of the wafer 1. Is preset.
【０００８】以下図１と図２により、閾値の切り換え方
法と、これによる異物の検出作用を説明する。図１にお
いて、被検査のパターン付きウエハ１に対して、レーザ
ビームＬT が投射され、ＩＣチップ11がＸ方向に走査さ
れ、ＩＣチップ11のパターンＰＴと付着異物による散乱
光ＬR が集光レンズ22により集光されることは、従来と
同様である。集光された散乱光ＬR の１／２はハーフミ
ラー41を透過し、結像レンズ23経て合焦受光器24に、パ
ターンＰＴと付着異物の映像が結像され、検出信号Ｓが
出力される。一方、ハーフミラー41により反射された散
乱光ＬR は、結像レンズ42を経て非合焦受光器43に結像
され、検出信号Ｓ’が出力される。これらの詳細を図２
(a) により説明する。A threshold switching method and a foreign matter detecting operation by the threshold switching method will be described below with reference to FIGS. 1 and 2. In FIG. 1, a laser beam L T is projected onto the patterned wafer 1 to be inspected, the IC chip 11 is scanned in the X direction, and the pattern PT of the IC chip 11 and scattered light L R due to adhered foreign matter are collected. Focusing by the lens 22 is similar to the conventional one. Half of the collected scattered light L R is transmitted through the half mirror 41, and the image of the pattern PT and the adhering foreign matter is imaged on the focusing light receiver 24 via the imaging lens 23, and the detection signal S is output. It On the other hand, the scattered light L R reflected by the half mirror 41 is imaged on the non-focus light receiver 43 via the imaging lens 42, and the detection signal S ′ is output. These details are shown in Figure 2.
It will be explained by (a).
【０００９】図２(a) において、(イ) はパターンＰＴと
その付着異物ｅP がレーザビームＬT により走査された
場合で、それぞれの映像は、合焦受光器24には明瞭に結
像される。一方、非合焦受光器43にはパターンＰＴは焦
点ボケして結像されるが、付着異物ｅP は結像されな
い。これに対して、(ロ) は無地部分Ｎが走査された場合
で、付着異物ｅN の映像は合焦受光器24には結像される
が、非合焦受光器43には結像されない。以上により、パ
ターンＰＴの映像は両受光器24,43 にともに結像され、
それぞれの検出信号は "有" とされ、無地部分Ｎに対す
るそれぞれの検出信号は "無"とされ、これが判定条件
とされる。In FIG. 2 (a), (a) shows the case where the pattern PT and the adhering foreign matter e P are scanned by the laser beam L T , and the respective images are clearly formed on the focusing light receiver 24. To be done. On the other hand, the pattern PT is defocused and imaged on the defocused light receiver 43, but the adhered foreign matter e P is not imaged. On the other hand, in (b), when the plain portion N is scanned, the image of the adhering foreign matter e N is imaged on the focused light receiver 24, but not on the unfocused light receiver 43. . From the above, the image of the pattern PT is imaged on both the light receivers 24 and 43,
Each detection signal is "present", and each detection signal for the plain portion N is "absent", which is the determination condition.
【００１０】再び図１において、両受光器24,43 の検出
信号Ｓ，Ｓ’は、それぞれが閾値切り換え部５のアンプ
51,52 によりレベル調整されて、切り換え回路53に入力
し、また検出信号Ｓはコンパレータ３に入力する。両検
出信号Ｓ，Ｓ’がともに "有" の状態が継続している間
は、切り換え回路53より閾値Ｖa をコンパレータ３に設
定し、ともに "無" となると、閾値Ｖb に切り換えてコ
ンパレータ３に設定される。図２(b) は、コンパレータ
３に入力した検出信号Ｓの波形を示し、パターンＰＴに
対して設定された閾値Ｖa により、パターン波形が除去
され、これに重畳している付着異物ｅP のパルスｐP が
検出される。また、無地部分Ｎに対して設定された閾値
Ｖb により、大きい付着異物ｅN のパルスｐN と微小異
物ｅN'のパルスｐN'とは、ともに確実に検出され、検出
された各異物のデータがコンパレータ３より出力され
る。Referring again to FIG. 1, the detection signals S and S'of both photodetectors 24 and 43 are respectively the amplifiers of the threshold switching unit 5.
The level is adjusted by 51 and 52 and is input to the switching circuit 53, and the detection signal S is input to the comparator 3. While both detection signals S and S'are continuously "present", the switching circuit 53 sets the threshold value V a in the comparator 3, and when both are "absent", the threshold value V b is switched to the threshold value V b. Set to 3. FIG. 2B shows the waveform of the detection signal S input to the comparator 3, in which the pattern waveform is removed by the threshold value V a set for the pattern PT, and the adhered foreign matter e P superposed on the pattern waveform is removed. The pulse p P is detected. Further, the threshold value V b set for plain portion N, the 'pulse p N' of greater adhesion foreign matter e N pulses p N and foreign particles e N, are both reliably detected, the foreign objects detected Is output from the comparator 3.
【００１１】[0011]
【発明の効果】この発明は、受光器が非合焦のときは、
微小異物の映像は焦点ボケして結像されないが、パター
ンは散乱光の強度が十分強いので、その映像は結像され
ることに着眼したもので、非合焦受光器を設け、これと
既設されている合焦受光器の検出信号のそれぞれの有無
を判定条件とし、この判定条件に従って、パターンと無
地部分に対する閾値Ｖa と閾値Ｖb とを切り換えてコン
パレータに設定し、パターン波形を閾値Ｖa により除去
し、ＩＣチップの各部の付着異物、とくに無地部分の微
小異物を確実に検出するもので、パターン付きウエハの
異物検査に寄与する効果には、大きいものがある。According to the present invention, when the light receiver is out of focus,
The image of a minute foreign substance is out of focus and is not imaged, but since the pattern has a sufficiently high scattered light intensity, we focused on that image is imaged. The presence / absence of each of the detection signals of the focused light receivers set as a determination condition, and the threshold V a and the threshold V b for the pattern and the plain portion are switched and set in the comparator according to the determination condition, and the pattern waveform is set to the threshold V. It is removed by a and reliably detects foreign matter adhering to each part of the IC chip, particularly minute foreign matter in a plain area, and has a great effect of contributing to foreign matter inspection of a patterned wafer.
【図１】 図１は、この発明の一実施例における異物検
査装置１０の構成図である。FIG. 1 is a configuration diagram of a foreign matter inspection device 10 according to an embodiment of the present invention.
【図２】 図２は、異物検査装置１０の作用説明図で、
(a) は合焦受光器24と非合焦受光器43の作用説明図、
(b) は検出信号Ｓに対する閾値Ｖa とＶb の作用説明図
である。FIG. 2 is an operation explanatory view of the foreign matter inspection device 10,
(a) is an explanatory view of the operation of the focused receiver 24 and the unfocused receiver 43,
(b) is an explanatory view of the action of the threshold values V a and V b on the detection signal S.
【図３】 図３は、従来の異物検査装置の要部の基本構
成を示す。FIG. 3 shows a basic configuration of a main part of a conventional foreign matter inspection apparatus.
【図４】 図４は、ＩＣチップ11の散乱光ＬR と、合焦
受光器24の受光信号Ｓの詳細説明図である。FIG. 4 is a detailed explanatory diagram of scattered light L R of the IC chip 11 and a light reception signal S of the focusing light receiver 24.
１…パターン付きウエハ、11…ＩＣチップ、２…検査光
学系、21…レーザ光源、22…集光レンズ、23…結像レン
ズ、24…受光器、３…コンパレータ、４…非合焦受光
系、41…ハーフミラー、42…結像レンズ、43…受光器、
５…閾値切り換え部、51,52 …アンプ、53…切り換え回
路、１０…この発明を適用した異物検査装置、ＬT …レ
ーザビーム、ＬR …散乱光、ＰＴ…ＩＣチップのパター
ン、Ｎ…ウエハの無地部分、ｅ…付着異物、ｐ…付着異
物のパルス、Ｖ…閾値、Ｖa …パターンに対する閾値、
Ｖb …無地部分に対する閾値。DESCRIPTION OF SYMBOLS 1 ... Patterned wafer, 11 ... IC chip, 2 ... Inspection optical system, 21 ... Laser light source, 22 ... Condensing lens, 23 ... Imaging lens, 24 ... Photoreceiver, 3 ... Comparator, 4 ... Non-focus receiving system , 41 ... Half mirror, 42 ... Imaging lens, 43 ... Light receiver,
5 ... threshold switching portion, 51, 52 ... amplifier, 53 ... switching circuit, 10 ... to the present invention the applied foreign matter inspection device, L T ... laser beam, L R ... scattered light, the pattern of PT ... IC chip, N ... wafer Solid area, e ... Adhering foreign matter, p ... Adhering foreign matter pulse, V ... Threshold, V a ... Threshold for pattern,
V b ... Threshold value for a plain portion.
Claims (2)
ビームを投射し、該パターンによるレーザビームの散乱
光を、結像レンズの合焦点に配設した合焦受光器に結像
し、該合焦受光器の受光信号を、コンパレータに設定さ
れた閾値に比較して、該パターンまたは該ウエハの無地
部分に付着した異物を検出する異物検査装置において、
前記散乱光を分岐するハーフミラーと、該分岐された散
乱光に対する結像レンズ、および該結像レンズの非合焦
点に配設された非合焦受光器よりなる非合焦受光系を設
け、前記合焦受光器と該非合焦受光器のそれぞれの検出
信号の有無を判定条件とし、前記パターンと無地部分の
それぞれに対する閾値Ｖa と閾値Ｖb とを、予め切り換
え回路に設定し、前記判定条件に従って、該切り換え回
路により該閾値Ｖa と閾値Ｖb とを切り換えて前記コン
パレータに設定することを特徴とする、異物検出閾値の
切り換え制御方法。1. A laser beam is projected onto the surface of a patterned wafer, and the scattered light of the laser beam due to the pattern is imaged on a focusing receiver arranged at the focal point of an imaging lens, In a foreign matter inspection device for detecting a foreign matter adhered to the pattern or the uncoated portion of the wafer by comparing a light reception signal of the focus light receiver with a threshold value set in a comparator,
A half-mirror for splitting the scattered light, an imaging lens for the split scattered light, and a non-focusing light receiving system including a non-focusing light receiver arranged at a non-focusing point of the imaging lens are provided. The presence or absence of the detection signal of each of the focusing receiver and the non-focusing receiver is used as a determination condition, and the threshold V a and the threshold V b for each of the pattern and the plain portion are set in the switching circuit in advance, and the determination is performed. According to a condition, the threshold value V a and the threshold value V b are switched by the switching circuit and set in the comparator, and a foreign matter detection threshold value switching control method.
されず、該微小異物に対する受光信号を "無" とし、前
記両受光器は、前記パターンに対してそれぞれ受光信号
を出力してともに "有" とし、前記無地部分に対してそ
れぞれ検出信号を出力せずともに "無" とし、該各受光
信号の "有" と "無" とにより前記判定条件を構成した
ことを特徴とする、請求項１記載の異物検出閾値の切り
換え制御方法。2. The minute foreign matter is not imaged on the out-of-focus light receiver, the light receiving signal for the minute foreign matter is set to "absent", and both of the light receivers output the light receiving signals for the pattern respectively. Are both set to "yes", the detection signal is not output to each of the plain parts and both are set to "no", and the judgment condition is configured by "yes" and "no" of each light reception signal. The foreign matter detection threshold value switching control method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6200394A JPH07243981A (en) | 1994-03-07 | 1994-03-07 | Switching control method for foreign matter detection threshold value |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6200394A JPH07243981A (en) | 1994-03-07 | 1994-03-07 | Switching control method for foreign matter detection threshold value |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07243981A true JPH07243981A (en) | 1995-09-19 |
Family
ID=13187550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6200394A Pending JPH07243981A (en) | 1994-03-07 | 1994-03-07 | Switching control method for foreign matter detection threshold value |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07243981A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005098970A (en) * | 2003-08-25 | 2005-04-14 | Hitachi Kokusai Electric Inc | Method and apparatus for identifying foreign matter |
| WO2020157817A1 (en) * | 2019-01-29 | 2020-08-06 | 株式会社島津製作所 | Displacement measurement device and defect detection device |
-
1994
- 1994-03-07 JP JP6200394A patent/JPH07243981A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005098970A (en) * | 2003-08-25 | 2005-04-14 | Hitachi Kokusai Electric Inc | Method and apparatus for identifying foreign matter |
| JP4523310B2 (en) * | 2003-08-25 | 2010-08-11 | 株式会社日立国際電気 | Foreign matter identification method and foreign matter identification device |
| WO2020157817A1 (en) * | 2019-01-29 | 2020-08-06 | 株式会社島津製作所 | Displacement measurement device and defect detection device |
| JPWO2020157817A1 (en) * | 2019-01-29 | 2021-09-30 | 株式会社島津製作所 | Displacement measuring device and defect detection device |
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