JPH07243030A - Vacuum deposition device - Google Patents

Abstract

PURPOSE:To provide a vacuum deposition device capable of furnishing the same pattern size as that of the resist opening and capable of forming metal pattern with no pattern conversion difference. CONSTITUTION:This vacuum deposition device is provided with a vapor deposition source 21, a collimator 22 having a through hole 22a and made of a heat- resistant material having a good heat conductivity formed directly above the source 21 and a heating element 23 arranged around the collimator 22 to heat the collimator 22 above the temp. of the source. Consequently, the incident angle of the vapor deposition material is kept constant.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus used for manufacturing semiconductor devices and the like.

[0002]

2. Description of the Related Art Conventionally, a vacuum vapor deposition apparatus is roughly classified into a resistance heating vapor deposition apparatus and an electron beam vapor deposition apparatus. In both cases, a vapor deposition source is heated by a heating element and an electron beam to be vaporized to form a semiconductor substrate. The vapor deposition material is attached to the etc. FIG. 6 is a schematic configuration diagram of such a conventional electron beam evaporation apparatus.

As shown in this figure, the electron beam vapor deposition apparatus comprises a filament 3 for generating an electron beam, an accelerating electrode, a magnet 4 as a focusing electrode, and an anode 1 holding a vapor deposition source 2. This electron beam vapor deposition apparatus accelerates the electron beam generated from the filament 3 and irradiates the vapor deposition source 2 to vapor deposit the vapor deposition material on the semiconductor substrate 5.

Therefore, the vapor deposition of the vapor deposition material on the semiconductor substrate will be described with reference to FIGS. 7 and 8. Various processes for forming electrodes on a semiconductor substrate have been developed, but here, the formation of electrodes on the semiconductor substrate by the lift-off method used in GaAs ICs and the like will be described.

First, a resist 12 is applied on a semiconductor substrate 11 and a resist opening 15 is formed by photolithography. Next, the semiconductor substrate 11 is set in the vacuum chamber, and the vapor deposition source 13 is heated and vaporized, so that the vaporized material 14 uses the resist 12 as a mask to form the semiconductor substrate 1
A metal pattern 16 to be stacked and deposited on one resist opening 15 is formed.

At this time, the vaporized material 14 is generated in the vacuum chamber by the vapor deposition source 1
From 3, it is possible to go straight toward the semiconductor substrate 11 and adhere. The reason is that when the vacuum degree is a pressure of about 10 ^-6 Torr, the mean free path λ of the molecule is about several hundred m, and the traveling direction does not change in a vacuum chamber of several tens cm. By the way, λ = 1 / √2πnφ ² , n = density (number / cm ³ ) of molecule, and φ is diameter (cm) of molecule.

The molecular density n is determined by the pressure P and the temperature T.
Has a relationship such as P = 1.035 × 10 ⁻¹⁹ nT. Next, as shown in FIGS. 7 and 8, a metal pattern 16 formed on the semiconductor substrate 11 is formed.
Considering the shape of the above, the evaporated material 14 adheres to the semiconductor substrate 11 from the end of the resist opening 15 at a certain incident angle α.

The incident angle α can be geometrically determined by [radius of deposition source c + (1/2) width of resist opening b] / distance a between resist surface and deposition source. By this method,
The formed metal pattern 16 has a resist opening 15
The edge length d of the metal pattern 16 formed on the inner side is determined by tan α × resist thickness t.

As a result, the length of the metal pattern 16 becomes [width b of the resist opening 15+ (edge length d × 2 of the metal pattern 16)].

[0010]

As described above, according to the conventional vapor deposition apparatus, the length of the metal pattern 16 with respect to the resist opening 15 is the edge length d of the metal pattern.
There is a problem in that the pattern length is increased by x2, a pattern conversion difference occurs, and the set pattern length cannot be obtained.

If the resist 12 has a tapered cross-section, it means that the resist 1
When the cross-sectional shape of 2 is vertical or, conversely, is formed to have a narrower depth, when the metal pattern 16 is formed, the metal pattern 16 and the resist 1 are formed.
This is because the metal layer deposited on the metal layer 2 is connected and the step disconnection cannot be performed, and the predetermined metal pattern 16 cannot be formed.

In order to eliminate the above-mentioned problems, the present invention provides a vacuum vapor deposition apparatus capable of obtaining a pattern dimension similar to that of a resist opening and forming a metal pattern having no pattern conversion difference. The purpose is to do.

[0013]

In order to achieve the above object, the present invention provides a vapor deposition apparatus, a vapor deposition source, and a heat-resistant substance having a through hole formed directly above the vapor deposition source and having good thermal conductivity. The collimator made in 1. and a heating element arranged around the collimator and heating the collimator to a temperature higher than the vapor deposition source are provided.

[0014]

According to the present invention, as described above, the collimator is provided directly above the vapor deposition source, and the collimator is provided with the heating device, so that the incident angle of the vapor deposit is constant and the resist opening portion is formed. It is possible to obtain a deposit pattern size of the same size as the above. In addition, the evaporated material attached to the collimator can be reliquefied or vaporized, and can be returned to the evaporation source and redeposited. Therefore, by returning the vapor deposition material to the vapor deposition source, the vapor deposition material can be recovered.

[0015]

Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a configuration diagram of a main part of a vacuum vapor deposition apparatus showing a first embodiment of the present invention, FIG. 2 is a top view of a collimator of the vacuum vapor deposition apparatus, FIG. 3 is a partially enlarged sectional view of a collimator of the vacuum vapor deposition apparatus, FIG. 4 is a diagram showing a relationship between vapor deposition particles and a collimator of the vacuum vapor deposition device, and FIG. 5 is a sectional view showing a state of forming a pattern of vapor deposition material on a semiconductor substrate by the vacuum vapor deposition device.

As shown in FIG. 1, a highly heat-resistant collimator 22 having a plurality of through holes 22a is arranged immediately above a vapor deposition source 21 in a vacuum vapor deposition apparatus. Here, the collimator is a straight-line property (incident angle α ≈
90 °) refers to a jig having a through hole so as to pass only the one that is 90 °. Here, for example, the collimator 2
2 has a diameter of about 50 mm and a height of about 30 to 50 mm, and the through hole 22a has a diameter of about 1 mm and a height of 30 to 50 m.
I am using m.

The collimator 22 needs to be larger than the vapor deposition source 21, and the material is a high heat resistant metal (W, Mo) or a high heat resistant material such as ceramics (BN), which is a substance having good thermal conductivity. It is preferable. Further, a heating element 23 is arranged on the outer peripheral portion of the collimator 22, so that the collimator 22 can be heated.

The heating element 23 has a role of supporting the collimator 22 directly above the vapor deposition source 21 and a role of heating the collimator 22. For example, as a resistance heat source, Ni-
A Cr wire, a tungsten wire, a carbon wire or the like can be used. By supporting the heating element 23, the distance g between the vapor deposition source 21 and the collimator 22 is set to be about 10 mm or less.

Next, the movement of the vapor deposition particles 24 when passing through the collimator 22 will be described with reference to FIG. The vapor deposition particles 24 vaporized from the vapor deposition source 21 vaporize at a free angle from the evaporation surface. At this time, most of the vapor deposition particles 24 adhere to the surface of the collimator 22 other than the through hole 22a or adhere to the side wall surface of the through hole 22a.

At this time, since the collimator 22 is heated by the heating element, the vapor deposition particles 24 attached to the portions other than the through holes 22a of the collimator 22 are not solidified and stacked, but are liquefied vapor deposits 29. Returns to the evaporation source 21,
The process of re-evaporation is repeated. In other words, there is an advantage that the deposit can be effectively recovered. Next, the vapor deposition particles 25 that have passed through the through hole 22a without adhering to the side wall of the through hole 22a of the collimator 22 and the other surface progress in the vertical direction toward the semiconductor substrate 26, and the upper surface of the resist 27 and the resist. It is stacked in the opening 28.

Since the vapor deposition particles 24 pass through the through hole 22a of the collimator 22, the incident direction is restricted.
The deposition incident angle is approximately α = 90 °. The limitation of the incident angle is limited as the length of the through hole 22a of the collimator 22 is longer and the diameter of the through hole 22a is smaller, and approaches the incident angle of 90 °. As described above, the collimator 2
Since the incident angle of the vapor deposition particles 25 that have passed through 2 is limited, as shown in FIG. 5, the dimension d of the deposited vapor deposition material pattern 30 is close to that of the resist opening 28.

Further, in particular, in this embodiment, the collimator 22 is detachable from the heating element 23, and the length of the collimator 22 can be changed. FIG. 9 is a configuration diagram of a main part of a vacuum vapor deposition device showing a second embodiment of the present invention. In this embodiment, a high frequency induction heating method is used instead of the electron beam heating method in the above-mentioned embodiments.

That is, as shown in FIG. 9, a high frequency induction heating evaporation source 41 is provided below the vacuum evaporation apparatus. That is, the deposit 43 is put in the crucible 42, and the crucible 42 is
A work coil 44 is provided around the work coil 44, and high-frequency power is supplied to the work coil 44 from a high-frequency power supply 45 to generate an induced current in the deposit 43 and generate vapor deposition particles toward the semiconductor substrate 51. High frequency induction heating evaporation source 41
Immediately above it is a collimator 46 having many through holes 46a.
Is provided, and the collimator 46 is heated from the outside of the velveyer 48 by the heating coil 47 so as to have the same temperature as the vapor deposition material 43.

Therefore, the vapor deposition particles that come into contact with the collimator 46 are collected in the crucible 42, and the collimator 4
The vapor-deposited particles that have passed through the through holes 46a of
1 can be vapor deposited to form a vapor deposition pattern. As described above, since the collimator 46 is installed near the semiconductor substrate 51, it is preferable to install the collimator 46 on the vapor deposition source side rather than installing
The incident angle of the vapor deposition particles becomes constant, and a metal pattern having no pattern conversion difference can be formed.

FIG. 10 is a block diagram of the essential parts of a vacuum vapor deposition device (MBE device) showing a third embodiment of the present invention. In this figure, 61 is a molecular beam source (jetting cell), 62 is a molecular beam source shutter, 63 is a liquid nitrogen shroud, 64 is an ion gun, 65 is a sample holder airlock system, 66 is a shutter, and 67 is a quadrupole. A mass spectrometer, 68 is a sorption pump, 69 is an ion pump, 70 is a titanium sublimation pump, 71 is a manipulator, and 72 is a collimator with a heater according to the present invention.

As described above, in this embodiment, the molecular beam source 6 is used.
A collimator 72 with a heater is arranged between the 1 and the shutter 62 of the molecular beam source. Therefore, the direction of the vapor deposition material from the molecular beam source 61 is regulated, and the uniformity of the epitaxial layer can be improved. Further, the above-mentioned collimator is removable, and collimators of various lengths can be detachably arranged.

The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.

[0028]

As described above in detail, according to the present invention, since the collimator with a heating device is provided directly above the vapor deposition source, (1) the incident angle of the vapor deposit is constant and the resist It is possible to form a deposit pattern dimension having the same dimension as the opening, that is, a pattern having no pattern conversion difference.

(2) The vaporized substance attached to the collimator can be reliquefied or vaporized, and can be returned to the vapor deposition source and redeposited. Therefore, by returning the vapor deposition material to the vapor deposition source, the vapor deposition material can be recovered and the vapor deposition material can be saved.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a main part of a vacuum vapor deposition device showing a first embodiment of the present invention.

FIG. 2 is a top view of the collimator of the vacuum vapor deposition device showing the first embodiment of the present invention.

FIG. 3 is a partially enlarged sectional view of a collimator of the vacuum vapor deposition device showing the first embodiment of the present invention.

FIG. 4 is a diagram showing a relationship between vapor deposition particles and a collimator of the vacuum vapor deposition device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a state in which a pattern of a vapor deposition material is formed on a semiconductor substrate by the vacuum vapor deposition device according to the first embodiment of the present invention.

FIG. 6 is a schematic configuration diagram of a conventional electron beam evaporation apparatus.

FIG. 7 is an explanatory diagram of forming a metal pattern by a conventional electron beam vapor deposition apparatus.

FIG. 8 is a cross-sectional view showing a state in which a pattern of a deposition material is formed on a semiconductor substrate by a conventional electron beam deposition apparatus.

FIG. 9 is a main part configuration diagram of a vacuum vapor deposition device showing a second embodiment of the present invention.

FIG. 10 is a main part configuration diagram of a vacuum vapor deposition device (MBE device) showing a third embodiment of the present invention.

[Explanation of symbols]

 21 evaporation source 22,46 collimator 22a, 46a through hole 23 heating element 24,25 vapor deposition particles 26,51 semiconductor substrate 27 resist 28 resist opening 29 liquefied vapor deposition material 30 vapor deposition material pattern 41 high frequency induction heating evaporation source 42 crucible 43 vapor deposition Object 44 Work coil 45 High-frequency power source 48 Belveyor 47 Exothermic coil 61 Molecular beam source (jetting cell) 62 Molecular beam source shutter 63 Liquid nitrogen shroud 64 Ion gun 65 Sample holder airlock system 66 Shutter 67 67 Quadrupole mass spectrometer 68 Soap Ion pump 70 ion pump 70 titanium sublimation pump 71 manipulator 72 collimator with heater

Claims (4)

[Claims] 1. A vapor deposition source, (b) a collimator made of a heat-resistant material having good thermal conductivity and having a through hole formed immediately above the vapor deposition source, and (c) the periphery of the collimator. And a heating element that heats the collimator to a temperature equal to or higher than a vapor deposition source. 2. The vacuum vapor deposition apparatus according to claim 1, wherein the vapor deposition source is heated by an electron beam heating method. 3. The vacuum vapor deposition apparatus according to claim 1, wherein the vapor deposition source is heated by a high frequency induction heating method. 4. The vacuum vapor deposition apparatus according to claim 1, wherein the vapor deposition source is a molecular beam source by a molecular beam epitaxial method.