JPH07241088A - Fabrication of micromachine - Google Patents

Abstract

PURPOSE:To fabricate a micromachine having intricate structure equipped with a member of single crystal material easily with high accuracy. CONSTITUTION:A single crystal Si substrate 1102 having the (100) face directing upward is irradiated, on the uppermost layer 1104 thereof, with an Ne atom flow from a plurality of specified directions thus converting the crystal orientation of the uppermost layer 1104 such that the (111) face directs upward. Anisotropic etching is then effected from the bottom face of the substrate 1102 using a mask material 1106 to make a V-groove 1112. In this regard, the uppermost layer 1104 serves as an etching stopper. Consequently, a micromachine having a single crystal diaphragm of arranged thickness can be fabricated easily. This method fabricates a micromachine having an intricate member, e.g. a diaphragm composed of a single crystal material, easily without relying upon bonding.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micromachine and a method for manufacturing the same, and more particularly, to improve the characteristics of the micromachine by having a single crystal layer or an axially oriented polycrystalline layer in a specific member, and to easily and highly accurately manufacture the same. The present invention relates to a manufacturing method capable of being performed in.

[0002]

2. Description of the Related Art A micromachine is a device having a mechanical movement mechanism with a micro size of typically micrometer or less, and its main purpose is to collectively form a mask pattern on a semiconductor wafer. Prototyping is being carried out by diverting the semiconductor technology.

<1. Micromachine Having Movable Part> FIG. 77 is a front sectional view showing a sectional structure of an electrostatic motor manufactured by a conventional method. In this electrostatic motor 2000, a nitride film (Si ₃ N ₄₎ is formed on the single crystal Si substrate 2002.
A film) 2004 is formed, and a rotary shaft 2014 and a stator 2010 made of polycrystalline Si are fixedly formed on the nitride film 2004, and also made of polycrystalline Si. A ring-shaped rotor 2008 is locked to the rotary shaft 2014 with play. Therefore, the rotor 2008 can rotate about the rotation shaft 2014.

The stator 2010 is formed by radially arranging a plurality of members electrically isolated from each other so as to surround the rotor 2008 with a predetermined gap. Alternating voltages that are out of phase with each other are applied individually to these members of the stator. As a result, an electrostatic attractive force or repulsive force is generated between the rotor and the rotor, and the bearers of these forces sequentially move between the members. Along with that, the rotor makes a rotary motion. The diameter and thickness of the rotor are
It is reported to be 100 μm and 2.5 μm, respectively.

FIG. 78 is a process drawing showing a certain stage in the method of manufacturing the electrostatic motor 2000. To manufacture the electrostatic motor 2000, the rotor 2008 and the stator 20 are used.
10, rotating shaft 2014 and underlying nitride film 2004
A technique of forming a sacrificial layer and etching it is used to separate the layers from each other and form a gap therebetween. That is, to manufacture the electrostatic motor 2000,
First, a layer of SiO ₂ is once formed on the upper surface of the nitride film 2004 and is selectively removed, so that the space corresponding to the gap is selectively filled up.
006 is formed. CVD (Chemical Vapor Deposition) on it
A layer of polycrystalline Si is stacked by, for example, Then, the polycrystalline Si layer is selectively removed to form the rotor 2008 and the stator 2010. Further, a sacrifice layer 2012 is newly formed, and polycrystalline S is formed on the sacrifice layer 2012.
After the i layer is newly stacked, this polycrystalline Si layer is selectively removed and molded into the shape of the rotating shaft 2014. Finally,
The electrostatic motor 2000 shown in FIG. 77 is completed by removing all the two sacrificial layers by etching.

<2. Micromachine Having Deformation Part> FIG. 79 is a plan view of an electrostatic linear actuator manufactured by a conventional method. In this actuator 2030, a fixed electrode 2040 made of polycrystalline Si and a movable portion 2036 made of polycrystalline Si are formed on a single crystal Si substrate 2032. The comb-teeth-shaped fixed electrode 2040 has a single-crystal Si substrate 20 at its root.
The protrusions on the teeth of the comb are fixed above 32 and are raised from the single crystal Si substrate 2032. In addition, the movable portion 203
6 is a single crystal Si substrate 20 only in the supporting portion 2034.
Fixed to 32, all other parts are single crystal Si substrate 20.
It rises from 32. The movable portion 2036 has a comb tooth-shaped tip portion 2038.
Mesh with each other without contacting the fixed electrode 2040.

When a voltage is applied to the fixed electrode 2040, an electrostatic attractive force or repulsive force acts between the fixed electrode 2040 and the tip portion 2038, and accordingly, the tip portion 2038 is linearly displaced in the horizontal plane. At this time, the member connecting the tip portion 2038 and the support portion 2034 is the tip portion 2038.
Is an elastic member that is a source of a restoring force for the displacement, and is elastically deformed as the tip portion 2038 is displaced.

Also in the method of manufacturing the actuator 2030, as in the method of manufacturing the electrostatic motor 2000, the steps of forming the sacrificial layer and removing it by etching are used. That is, first, the single crystal Si substrate 2032
A sacrificial layer is formed on the above, and a polycrystalline Si layer is formed thereon. After that, the polycrystalline Si layer is selectively removed to form the movable portion 2036 and the fixed electrode 2040. Finally, the actuator 2030 is completed by removing all the sacrificial layers by etching.

<3. Micromachine with cavity> FIG. 8
0 is a cross-sectional perspective view showing a part of a pressure sensor manufactured by a conventional method. In this pressure sensor 2100, a lower housing 2102 and an upper housing 2 each having a groove are provided.
A cavity 21 is formed inside by joining 104 to each other.
A hollow container defining 06 is constructed. This cavity 2
A plate-shaped vibrator 2108 is inserted in 106. These lower housing 2102 and upper housing 210
4 and the vibrator 2108 are both made of single crystal Si.

The vibrator 2108 has a cavity 2 only at its end.
It is supported by the hollow container by contacting the inner wall defining 106, all other parts being spaced from the inner wall. Therefore, the natural vibration can be excited in the vibrator 2108 by applying a static magnetic field and an oscillating current from the outside. The lower housing 2102 is connected to a diaphragm (not shown) to which the pressure to be measured is applied. When pressure is applied to the diaphragm, the diaphragm deforms, and the vibrator 2108 also deforms accordingly.
When the vibrator 2108 deforms, the natural frequency deviates according to the degree of the deformation. The magnitude of the pressure is measured by detecting the deviation of the natural frequency. In this pressure sensor 2100, each of the members 2102, 2104, and 2108 is made of single crystal Si,
It has excellent elasticity and strength, and has uniform properties. Therefore, there is an advantage that a large deformation can be given to these members and a highly reliable pressure sensor is realized.

In order to manufacture this pressure sensor 2100,
As described above, a technique called joining (also called “bonding”) is used. That is, the two housings 2102 and 2104 having the groove and the vibrator 2108 are made of single crystal S.
After being formed separately by i, the two housings 2102 and 2104 are joined to each other at the joining surface 2110 while inserting the vibrator 2108 into the groove. Since the bonding process is performed in a vacuum, the cavity 2106 is kept in a vacuum state even after the completion of the device.

<4. Micromachine with Diaphragm> FIG. 81 is a front view of another pressure sensor manufactured by a conventional method. Also in the manufacture of this pressure sensor 2200, the joining of single crystal Si is used. That is, V is formed on the single crystal Si substrate 2202 by etching.
After forming the V-shaped groove, the thin substrate 2206 also made of single crystal Si is bonded at the bonding surface 2208.
After that, by further performing etching, the substrate 22
Expand the V-shaped groove until it opens at the bottom of 02. For etching, an etchant that selectively etches a specific crystal plane is used.

In the thin substrate 2206, the portion 2212 that covers the upper portion of the groove 2204 functions as a diaphragm to which the pressure to be measured is applied. The diaphragm 2212 elastically deforms when pressure is applied. A piezoresistive element 2210 functioning as a strain gauge is formed near the fixed end of the diaphragm 2212 where the strain associated with this elastic deformation is the largest. The piezoresistive element 2210 is formed by selectively implanting impurity ions into a specific portion on the upper surface of the diaphragm 2212. In this pressure sensor 2200, the magnitude of pressure is measured through the amount of change in electric resistance in the piezoresistive element 2210. In this pressure sensor 2200,
Since the diaphragm 2212 is made of single crystal Si,
There is an advantage that a large elastic deformation can be applied to this diaphragm 2212.

<5. Micromachine with Element Formed on Insulating Layer> FIG. 82 is a front view of still another pressure sensor manufactured by a conventional method. Also in the manufacture of this pressure sensor 2230, the joining of single crystal Si is used. That is, the single crystal S having the diaphragm 2234 on the groove
First, an insulating film 2236 of SiO ₂ is formed on the i substrate 2232.
To form. Next, a single crystal Si thin film is bonded onto this insulating film 2236. A p-type Si piezoresistive element 223 functioning as a strain gauge is prepared by selectively introducing p-type impurities into the single crystal Si thin film in advance.
8 is formed. After the joining is completed, the single crystal Si thin film is subjected to an etching treatment to selectively remove the other parts while leaving the p-type Si part. At this time, S
Si containing a large amount of i oxide (SiO ₂ ) and impurities
Uses the property that the etching rate is lower than that of Si containing less impurities. As a result, only the piezoresistive element 2238 remains on the SiO ₂ insulating film 2236. After that, by selectively forming a metal wiring layer 2240 on the insulating film 2236,
The pressure sensor 2230 is completed.

When the pressure to be measured is applied, the diaphragm 2224 elastically deforms, and the strain associated with this elastic deformation causes a change in the electrical resistance of the piezoresistive element 2238. The magnitude of the pressure is measured by the amount of change in the electric resistance.

In the pressure sensor 2230, the piezoresistive element 2238 is formed on the insulating film 2236, so that the piezoresistive element 2238 and the substrate 2232 are electrically insulated from each other. Therefore, the piezoresistive element 2
Since the current flowing through 238 does not leak to the substrate 2232, the amount of change in electric resistance can be accurately measured.

<6. Micromachine Having Cantilever> FIG. 82 is a perspective view of an acceleration sensor manufactured by a conventional method. In this acceleration sensor 2300, the groove 23
A SiO ₂ film 2304 is formed on a single crystal Si substrate 2302 having 08, and Si is formed above the groove 2308.
Cantilever forming part of the O ₂ film 2304 (cantilever)
2306 is protruding. By grasping the magnitude of elastic deformation of the cantilever 2306 with a strain gauge, the magnitude of acceleration or vibration can be measured.

To manufacture the acceleration sensor 2300, a SiO ₂ film is formed on the entire surface of the substrate 2302 before the groove 2308 is formed, and then the SiO ₂ film is selectively removed. SiO with protrusions
₂ Shaped into the shape of the film 2304. Next, the substrate 230
A groove 2308 is formed by selectively performing an etching process on the upper surface of 2, and the protruding portion of the SiO ₂ film constitutes a cantilever.

[0019]

Since the conventional micromachine and the manufacturing method thereof are configured as described above, they have the following problems.

That is, first, the electrostatic motor 2000 (see FIG.
7 and FIG. 78), since the rotor 2008 and the rotating shaft 2014 that rub against each other are both made of polycrystalline Si, there is a problem that they are severely worn and cannot be put to practical use as a motor. These members are polycrystalline S
i is composed of the sacrificial layer 20 composed of SiO _2.
This is because there was no technique for forming single crystal Si on 06 and 2012.

Further, the actuator 2030 (FIG. 79)
Then, since the movable part 2036 is made of polycrystalline Si, the movable part 236 has a limit in elasticity and strength.
There was a limit to the magnitude of elastic deformation of 036. Moving part 20
36 is made of polycrystalline Si instead of single crystal Si because the movable portion 2036 is formed by stacking Si on the sacrificial layer made of SiO ₂ .

Further, the pressure sensor 2100 having a cavity
In FIG. 80, any of the members 2102, 2104, 2
Since both 108 are made of single crystal Si, the cavity 21
In order to realize a complicated structure in which the oscillator 2108 is housed inside and the oscillator 2108 is made of single crystal Si, conventionally, there has been no choice but to use the bonding technique as described above. For this reason, since it is necessary to manufacture each member individually, the manufacturing process is complicated, and high dimensional accuracy is required for each member to be joined to each other. There is a problem that it is not easy to align the members.

Further, also in the pressure sensor 2200 (FIG. 81), in order to realize a complicated structure having the groove 2204, conventionally, two members 220 made of single crystal Si are used.
No. 2,2206 had to be manufactured individually beforehand and then combined by a bonding technique. Therefore, there is a problem that the manufacturing process is complicated and difficult.

Further, also in the pressure sensor 2230 (FIG. 82), the piezoresistive element 22 made of single crystal Si.
38 is formed on the insulating film 2236 of SiO ₂ ,
Conventionally, there was no choice but to use the above-mentioned joining technique. Therefore, there is a similar problem that the manufacturing process is complicated and difficult.

Further, in the acceleration sensor 2300 (FIG. 83), since the cantilever 2306 is made of SiO ₂ , there is a problem that elasticity limit, strength, uniformity of characteristics, etc. are not sufficient. However, in order to manufacture the acceleration sensor 2300 without using the bonding technique, it is necessary to selectively remove the substrate 2302 made of single crystal Si while leaving the cantilever 2306 by an etching process. 2306 the substrate 23
However, there is a problem in that it must be composed of SiO ₂ or the like different from 02.

The present invention has been made to solve the above-mentioned problems of the conventional method for manufacturing a micromachine, and it is easy and accurate to manufacture a micromachine having a single crystal material as a member and having a complicated structure. It is an object of the present invention to provide a manufacturing method that can be often performed.

[0027]

A method for manufacturing a micromachine according to a first aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. a) a step of forming a sacrificial layer on the base material, (b) a step of forming a layer of a predetermined substance constituting the member on the sacrificial layer, and (c) the step (b) Medium or later, under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed,
A step of converting the layer of the predetermined substance into a single crystal layer by irradiating the layer of the predetermined substance with a beam of low energy gas that does not cause the sputtering of the predetermined substance, (d) the step After (c), the step of removing the sacrificial layer is provided.

A method for manufacturing a micromachine according to a second aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a layer of a first substance that prevents the progress of etching on the surface; and (b) forming a layer of a second substance that constitutes the member on the layer of the first substance, (c) During or after the step (b), perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Irradiating the layer of the second substance with a beam of low energy gas that does not cause sputtering of the second substance from a different direction, thereby converting the layer of the second substance into a single crystal layer. And (d) after the step (b), And a step of performing selective etching of said substrate to said layer of first material from the side is exposed, the.

A method for manufacturing a micromachine according to a third aspect of the present invention is the method for manufacturing the micromachine according to the second aspect, wherein the first substance is an electrical insulator and the second substance is a semiconductor. .

According to a fourth aspect of the present invention, there is provided a method of manufacturing a micromachine according to the second aspect, wherein the second substance is a semiconductor, and (e) a single crystal layer of the second substance. And a step of incorporating a strain sensor into the single crystal layer of the second substance by selectively introducing impurities into the second substance.

A method for manufacturing a micromachine according to a fifth aspect of the present invention is a method for manufacturing a micromachine including a member having a structure at least a part of which is separated from a base material. Forming a sacrificial layer thereon, (b) selectively removing a specific portion of the sacrificial layer, (c) on the sacrificial layer and on the substrate corresponding to the specific portion. A step of forming a layer of a predetermined substance constituting the member, and (d) during or after the step (c),
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
By irradiating the layer of the predetermined substance, converting the layer of the predetermined substance into a single crystal layer, (e) the step
After (d), the step of removing the sacrificial layer is provided.

A micromachine manufacturing method according to a sixth aspect of the present invention is the manufacturing method according to the fifth aspect, wherein (f) prior to the step (e), the predetermined material layer is selectively opened. And a step of forming a portion,
(e) includes (e-1) a step of removing the sacrificial layer by etching through the opening after the step (f).

A micromachine manufacturing method according to a seventh aspect of the present invention is a method of manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a first sacrificial layer thereon, (b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b). Causing the sputtering of the first substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the first substance. Irradiating the layer of the first substance with a beam of low-energy gas that is not present, converting the layer of the first substance into a single crystal layer; and (d) converting the layer of the first substance. A step of selectively removing, and (e) remaining after the step (d) without being removed. Forming a second sacrificial layer on the layer of the first material and on the first sacrificial layer, and (f) at least in the step (d) the first material layer Selectively removing a specific portion of the first and second sacrificial layers, leaving a region left unremoved, (g) corresponding to the specific portion of the second sacrificial layer and the specific portion. A step of forming a layer of a second substance constituting the member on the base material, and (h) during or after the step (g), the crystallization temperature of the second substance or less Under a proper temperature of, a beam of low energy gas that does not cause sputtering of the second substance is generated from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. Irradiating the layer of the second substance to convert the layer of the second substance to a single crystal layer, and (i) the process. After (h), and a step of removing the first and second sacrificial layers.

A method of manufacturing a micromachine according to claim 8 of the present invention is a method of manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material, wherein (a) the base material Forming a recess on the upper surface, and (b) filling the recess with a sacrificial layer,
(c) a step of forming a layer of a predetermined substance forming the member on the sacrificial layer and on the base material corresponding to the peripheral portion of the recess, and (d) the step (c ), Or at a proper temperature below the crystallization temperature of the predetermined substance, from the direction perpendicular to the plurality of close-packed crystal planes having different directions in the single crystal layer to be formed, the predetermined substance The step of converting the layer of the predetermined substance into a single crystal layer by irradiating the layer of the low energy gas that does not cause sputtering of the predetermined substance to the layer of the predetermined substance, (e) the step (d) And a step of removing the sacrificial layer later.

A method for manufacturing a micromachine according to a ninth aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a recess on the upper surface, and (b) filling the recess with a sacrificial layer,
(c) forming a layer of a first substance of an insulator on the sacrificial layer and on the base material corresponding to the peripheral portion of the recess, and (d) the first substance. A layer of a second semiconductor material forming a main component of the member on the layer of (2), (e) during or after the step (d),
Of a low energy which does not cause the sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed, at an appropriate temperature equal to or lower than the crystallization temperature of the substance. The beam of gas is
Irradiating the layer of the substance of claim 2 to the layer of the second substance to a single crystal layer, and (f) removing the sacrificial layer after the step (e). .

A micromachine manufacturing method according to a tenth aspect of the present invention is the manufacturing method according to the eighth aspect, wherein the predetermined substance is a semiconductor, and (f) the single crystal layer of the predetermined substance is selected. The method further comprises the step of incorporating the strain sensor into the single crystal layer of the predetermined substance by selectively introducing impurities.

The method of manufacturing a micromachine according to claim 11 of the present invention is a manufacturing method including a step of etching a base material, wherein (a) a layer of a predetermined substance is formed on the base material. And (b) during or after the step (a), at a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. By irradiating the layer of the predetermined substance with a low energy gas beam that does not cause the sputtering of the predetermined substance from a direction perpendicular to the direction, the layer of the predetermined substance has a predetermined high resistance to the etching. A step of converting into a single crystal layer having a crystal orientation of
(c) After the step (b), the step of selectively etching the base material from the back side of the base material until the layer of the predetermined substance is exposed is provided.

A micromachine manufacturing method according to a twelfth aspect of the present invention is the manufacturing method according to the eleventh aspect, wherein the substrate has a single crystal structure and the predetermined substance is the same substance as the substrate. Then, (d) after the step (c), under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed are formed. By irradiating the layer of the predetermined substance with a beam of low energy gas that does not cause the sputtering of the predetermined substance from the vertical direction, the single crystal layer of the predetermined substance is made the same as the base material. And a step of converting into a new single crystal layer having a crystal orientation.

A method for manufacturing a micromachine according to a thirteenth aspect of the present invention is a method for manufacturing a micromachine, which comprises a step of etching a base material, and (a) a step of forming a mask material on the upper surface of the base material. And (b) a step of selectively removing the mask material, and (c) an appropriate temperature equal to or lower than the crystallization temperature of a predetermined substance forming the upper surface portion of the base material after the step (b). Below, a beam of low energy gas that does not cause sputtering of the predetermined substance is directed to the upper surface of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. By irradiating, the upper surface portion of the predetermined substance,
A step of selectively converting to a single crystal layer having a predetermined crystal orientation with high resistance to etching, (d) the step
After the step (c), the step of removing the mask material, and (e) after the step (d), by performing the etching on the base material from the upper surface of the base material, the single crystal layer is formed. Selectively removing the portion of the substrate that is not covered.

According to a fourteenth aspect of the present invention, in the method for producing a micromachine according to the thirteenth aspect, before the step (c), the predetermined substance constituting the upper surface portion of the substrate is a single substance. Has a crystal structure, (f)
After the step (e), under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed,
By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause sputtering of the predetermined substance, the single crystal layer of the predetermined substance has the same crystal orientation as that before the step (c). And a step of converting into a new single crystal layer having a crystal orientation of.

A method for manufacturing a micromachine according to a fifteenth aspect of the present invention is the method for manufacturing a micromachine according to any one of the first to fourteenth aspects, in which the atomic weight of the element constituting the gas is a substance to be irradiated. It is lower than the maximum of the atomic weights of the constituent elements.

A method for manufacturing a micromachine according to a sixteenth aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. A step of forming a sacrificial layer thereon, (b) a step of forming a layer of a predetermined substance constituting the member on the sacrificial layer, (c) during or after the step (b), By irradiating the layer of the predetermined substance with a beam of low energy gas that does not cause the sputtering of the predetermined substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance, Converting the layer of material into an axially oriented polycrystalline layer, and (d) the step
After (c), the step of removing the sacrificial layer is provided.

According to a seventeenth aspect of the present invention, there is provided the method for producing a micromachine according to the sixteenth aspect, wherein the step (e) is performed after the step (c) and before the step (d). Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Irradiating the layer of the predetermined substance with the beam of the gas, to convert the axially oriented polycrystalline layer of the predetermined substance into a single crystal layer.

A method of manufacturing a micromachine according to claim 18 of the present invention is a method of manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material, wherein: Forming a layer of a first substance that prevents the progress of etching on the surface; and (b) forming a layer of a second substance that constitutes the member on the layer of the first substance, (c) During or after the step (b), a low energy gas beam that does not cause sputtering of the second substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. By converting the layer of the second substance into an axially oriented polycrystalline layer by irradiating the layer of the second substance, (d) after the step (b), Etching of the substrate from the backside until the layer of the first material is exposed And a step of selectively performing a.

A micromachine manufacturing method according to a nineteenth aspect of the present invention is the manufacturing method according to the eighteenth aspect, wherein after the step (c), (e) crystallization of the second substance is performed. A beam of low-energy gas that does not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the temperature, Irradiating the layer of the second substance to convert the axially oriented polycrystalline layer of the second substance into a single crystal layer.

A micromachine manufacturing method according to a twentieth aspect of the present invention is the manufacturing method according to the eighteenth or nineteenth aspects, wherein the first substance is an electrical insulator. Is a semiconductor.

A micromachine manufacturing method according to a twenty-first aspect of the present invention is the method according to the eighteenth or nineteenth aspect, wherein the second substance is a semiconductor, and (f) the second substance. Further comprising the step of incorporating a strain sensor into the axially oriented polycrystalline layer or the single crystalline layer of the second substance by selectively introducing impurities into the axially oriented polycrystalline layer or the single crystalline layer.

A method for manufacturing a micromachine according to a twenty-second aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a sacrificial layer thereon, (b) selectively removing a specific portion of the sacrificial layer, (c) on the sacrificial layer and on the substrate corresponding to the specific portion. A step of forming a layer of a predetermined substance constituting the member, and (d) during or after the step (c),
By irradiating the layer of the predetermined substance with a beam of a low-energy gas that does not cause sputtering of the predetermined substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance, A step of converting the layer of the substance of (1) into an axially oriented polycrystalline layer, and (e) after the step (d),
Removing the sacrificial layer.

A micromachine manufacturing method according to a twenty-third aspect of the present invention is the manufacturing method according to the twenty-second aspect, wherein the step (f) is performed after the step (d) and before the step (e). Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Irradiating the layer of the predetermined substance with the beam of the gas to convert the axially oriented polycrystalline layer of the predetermined substance into a single crystal layer.

A method for manufacturing a micromachine according to a twenty-fourth aspect of the present invention is the method for manufacturing a micromachine according to the twenty-second or the twenty-third aspects, wherein (g) the predetermined material layer is formed prior to the step (e). The method further comprises the step of selectively forming an opening, wherein the step (e) is (e-1) after the step (g),
Removing the sacrificial layer by performing etching through the opening.

A method for manufacturing a micromachine according to a twenty-fifth aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a first sacrificial layer thereon, (b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b). Irradiating the layer of the first substance with a beam of a low energy gas that does not cause sputtering of the first substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the first substance. The step of converting the layer of the first substance into an axially oriented polycrystalline layer by: (d) selectively removing the layer of the first substance; and (e) after the step (d) A second layer on the first layer of material and the first sacrificial layer that has not been removed. A step of forming a sacrificial layer, and (f) selecting a specific portion of the first and second sacrificial layers, leaving a region left at least in the step (d) without removing the first material layer. The step of removing the
(g) forming a layer of a second substance constituting the member on the second sacrificial layer and on the base material corresponding to the specific portion; and (h) the step (g ), Or at a proper temperature below the crystallization temperature of the second substance, from the direction perpendicular to the plurality of close-packed crystal planes having different directions in the single crystal layer to be formed, Irradiating the layer of the second substance with a beam of low-energy gas that does not cause sputtering of the substance of (2), converting the layer of the second substance into a single crystal layer; (h)
After that, removing the first and second sacrificial layers.

A micromachine manufacturing method according to a twenty-sixth aspect of the present invention is the manufacturing method according to the twenty-fifth aspect, wherein after the step (c), (j) crystallization of the first substance is performed. A beam of low-energy gas that does not cause sputtering of the first substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed under an appropriate temperature equal to or lower than the temperature, Irradiating the layer of the first substance to convert the axially oriented polycrystalline layer of the first substance into a single crystal layer.

A method for manufacturing a micromachine according to a twenty-seventh aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material, wherein (a) the base material Forming a first sacrificial layer thereon, (b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b). Inducing sputtering of the first substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the first substance. Irradiating the layer of the first substance with a beam of low-energy gas that is not present, converting the layer of the first substance to a single crystal layer; and (d) converting the layer of the first substance. A step of selectively removing, and (e) remaining after the step (d) without being removed. Forming a second sacrificial layer on the first material layer and on the first sacrificial layer, and (f) at least in the step (d) the first material layer Selectively removing the specific portions of the first and second sacrificial layers, leaving the regions left unremoved, (g) corresponding to the specific portions of the second sacrificial layer and above. And a step of forming a layer of a second substance constituting the member on the base material, and By irradiating the layer of the second substance with a beam of low energy gas that does not cause the sputtering of the second substance from one direction at a proper temperature of Converting to an oriented polycrystalline layer, (i) after the step (h), removing the first and second sacrificial layers,
Equipped with.

A method for manufacturing a micromachine according to a twenty-eighth aspect of the present invention is the manufacturing method according to the twenty-seventh aspect, wherein after the step (h) and before the step (i), (j) Do not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under a proper temperature equal to or lower than the crystallization temperature of the second substance. The method further comprises the step of irradiating the layer of the second substance with a beam of low-energy gas to convert the axially oriented polycrystalline layer of the second substance into a single crystal layer.

A method for manufacturing a micromachine according to a twenty-ninth aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material, wherein (a) the base material Forming a recess on the upper surface, and (b) filling the recess with a sacrificial layer,
(c) a step of forming a layer of a predetermined substance forming the member on the sacrificial layer and on the base material corresponding to the peripheral portion of the recess, and (d) the step (c ) Inside or after, at a proper temperature below the crystallization temperature of the predetermined substance, a beam of low energy gas that does not cause sputtering of the predetermined substance from one direction to the layer of the predetermined substance. The method comprises the steps of converting the layer of the predetermined substance into an axially oriented polycrystalline layer by irradiation, and (e) after the step (d), removing the sacrificial layer.

A micromachine manufacturing method according to a thirtieth aspect of the present invention is the manufacturing method according to the twenty-ninth aspect, wherein the step (f) is performed after the step (d) and before the step (e). Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Irradiating the layer of the predetermined substance with the beam of the gas to convert the axially oriented polycrystalline layer of the predetermined substance into a single crystal layer.

A micromachine manufacturing method according to a thirty-first aspect of the present invention is the manufacturing method according to the twenty-ninth or thirtieth aspects, wherein the predetermined substance is a semiconductor, and (g) a single substance of the predetermined substance is used. The method further comprises the step of incorporating a strain sensor into the single crystal layer or the axially oriented polycrystalline layer of the predetermined substance by selectively introducing impurities into the crystalline layer or the axially oriented polycrystalline layer.

A method for manufacturing a micromachine according to a thirty-second aspect of the present invention is a method for manufacturing a micromachine including a member having a structure in which at least a part is separated from a base material. Forming a recess on the upper surface, and (b) filling the recess with a sacrificial layer,
(c) forming a layer of a first substance of an insulator on the sacrificial layer and on the base material corresponding to the peripheral portion of the recess, and (d) the first substance. A layer of a second semiconductor material forming a main component of the member on the layer of (2), (e) during or after the step (d),
By irradiating the layer of the second substance with a beam of a low-energy gas that does not cause the sputtering of the second substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the substance, 2) converting the layer of material into an axially oriented polycrystalline layer, and (f) removing the sacrificial layer after step (e).

A micromachine manufacturing method according to a thirty-third aspect of the present invention is the manufacturing method according to the thirty-second aspect, wherein (g) is provided after the step (e) and before the step (f). Do not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under a proper temperature equal to or lower than the crystallization temperature of the second substance. The method further comprises the step of irradiating the layer of the second substance with a low-energy gas beam to convert the axially oriented polycrystalline layer of the second substance into a single crystal layer.

A method of manufacturing a micromachine according to a thirty-fourth aspect of the present invention is a manufacturing method including a step of etching a base material, wherein (a) a layer of a predetermined substance is formed on the base material. And (b) during or after the step (a), at a proper temperature below the crystallization temperature of the predetermined substance, a low energy gas that does not cause sputtering of the predetermined substance from one direction. The step of irradiating the layer of the predetermined substance with the beam of the step of converting the layer of the predetermined substance into an axially oriented polycrystalline layer having a predetermined crystal orientation with high resistance to the etching, and (c) After the step (b), the step of selectively etching the base material from the back side of the base material until the layer of the predetermined substance is exposed is provided.

A micromachine manufacturing method according to a thirty-fifth aspect of the present invention is the manufacturing method according to the thirty-fourth aspect, wherein the substrate has a single crystal structure and the predetermined substance is the same substance as the substrate. (D) after the step (c), under a proper temperature below the crystallization temperature of the predetermined substance, a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed. By irradiating the layer of the predetermined substance with a low energy gas beam that does not cause the sputtering of the predetermined substance from a direction perpendicular to And a step of converting into a single crystal layer having the same crystal orientation as.

A method for manufacturing a micromachine according to a thirty-sixth aspect of the present invention is a manufacturing method including a step of etching a base material, wherein (a) a layer of a predetermined substance is formed on the base material. And (b) during or after the step (a), at a proper temperature below the crystallization temperature of the predetermined substance, a low energy gas that does not cause sputtering of the predetermined substance from one direction. The step of converting the layer of the predetermined substance into an axially oriented polycrystalline layer by irradiating the layer of the predetermined substance with the beam of (c) the step (b).
After that, at a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, the predetermined substance is sputtered from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. By irradiating the layer of the predetermined substance with a beam of low energy gas, the axially oriented polycrystalline layer of the predetermined substance is converted into a single crystal layer having a predetermined crystal orientation with high resistance to the etching. And (d) after the step (c), the substrate is selectively etched from the back side of the substrate until the layer of the predetermined substance is exposed.

The method of manufacturing a micromachine according to a thirty-seventh aspect of the present invention is the manufacturing method according to the thirty-sixth aspect, wherein the base material has a single crystal structure and the predetermined substance is the same as the base substance. (E) after the step (d), under a proper temperature below the crystallization temperature of the predetermined substance, a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed. By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause the sputtering of the predetermined substance from a direction perpendicular to, the single crystal layer of the predetermined substance is made the same as the base material. And a step of converting into a new single crystal layer having a crystal orientation of.

A method of manufacturing a micromachine according to a thirty-eighth aspect of the present invention is a manufacturing method including a step of etching a base material, the method comprising: (a) forming a mask material on an upper surface of the base material; , (B) a step of selectively removing the mask material, and (c) an appropriate temperature below the crystallization temperature of a predetermined substance forming the upper surface portion of the base material after the step (b). By irradiating the upper surface of the predetermined substance with a beam of low energy gas that does not cause the predetermined substance to be sputtered from one direction, the upper surface portion of the predetermined substance is given a predetermined high resistance to the etching. Selectively converting into an axially oriented polycrystalline layer having a crystal orientation of, (d) after the step (c), the step of removing the mask material, and (e) after the step (d) Then, from the top surface of the substrate, By performing grayed, and a step of selectively removing portions of the substrate that the not covered by the single crystal layer.

A micromachine manufacturing method according to a thirty-ninth aspect of the present invention is the manufacturing method according to the thirty-eighth aspect, in which the predetermined substance constituting the upper surface portion of the substrate is before the step (c). Has a single crystal structure,
(f) After the step (e), under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed. From, a low energy gas beam that does not cause the sputtering of the predetermined substance, by irradiating the layer of the predetermined substance, the axially oriented polycrystalline layer of the predetermined substance, the step (c) before And a step of converting into a single crystal layer having the same crystal orientation as the crystal orientation.

The method for manufacturing a micromachine according to claim 40 of the present invention is the method for manufacturing a micromachine according to claim 38, wherein the predetermined substance constituting the upper surface portion of the substrate is before the step (c). Having an axially oriented polycrystalline structure, (f) after the step (e), at a proper temperature not higher than the crystallization temperature of the predetermined substance, the densest dense crystal in the axially oriented polycrystalline layer to be newly formed. By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause the sputtering of the predetermined substance from the direction perpendicular to the surface, the axially oriented polycrystalline layer of the predetermined substance is formed into the step described above. (c) A step of converting into a new axially oriented polycrystalline layer having the same crystal orientation as the previous crystal orientation.

A micromachine manufacturing method according to a forty-first aspect of the present invention is the manufacturing method according to the thirteenth aspect, wherein the predetermined substance constituting the upper surface portion of the substrate is before the step (c). Having an axially oriented polycrystalline structure, (f) after the step (e), at a proper temperature not higher than the crystallization temperature of the predetermined substance, the densest dense crystal in the axially oriented polycrystalline layer to be newly formed. By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause the sputtering of the predetermined substance from the direction perpendicular to the surface, the axially oriented polycrystalline layer of the predetermined substance is formed into the step described above. (c) A step of converting into a new axially oriented polycrystalline layer having the same crystal orientation as the previous crystal orientation.

A micromachine manufacturing method according to a forty-second aspect of the present invention is a manufacturing method including a step of etching a base material, the method comprising: (a) forming a mask material on an upper surface of the base material; , (B) a step of selectively removing the mask material, and (c) an appropriate temperature below the crystallization temperature of a predetermined substance constituting the upper surface portion of the base material after the step (b). By irradiating the upper surface of the predetermined substance with a beam of low energy gas that does not cause sputtering of the predetermined substance from one direction, the upper surface portion of the predetermined substance is selectively formed on the axially oriented polycrystalline layer. And (d) after the step (c), under a proper temperature below the crystallization temperature of the predetermined substance, a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. From the direction perpendicular to the By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause a ring, the axially oriented polycrystalline layer of the predetermined substance is converted into a single crystal having a predetermined crystal orientation with high resistance to the etching. Converting to a layer, (e) the step (d)
After that, the step of removing the mask material, and (f) the step
After (e), the step of selectively removing the portion of the base material not covered by the single crystal layer by performing the etching on the base material from the upper surface of the base material.

A micromachine manufacturing method according to a forty-third aspect of the present invention is the method for manufacturing a micromachine according to the forty-second aspect, wherein the predetermined substance constituting the upper surface portion of the base material is before the step (c). Has a single crystal structure,
(g) After the step (f), under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed. From, a low energy gas beam that does not cause sputtering of the predetermined substance, by irradiating the layer of the predetermined substance, the single crystal layer of the predetermined substance, the crystal orientation before the step (c) And a step of converting into a new single crystal layer having the same crystal orientation.

A micromachine manufacturing method according to a forty-fourth aspect of the present invention is the method for manufacturing a micromachine according to any one of the sixteenth to fourty-third aspects, wherein the atomic weight of the element constituting the gas is the irradiation target substance. It is lower than the maximum atomic weight of the constituent elements.

According to a forty-fifth aspect of the present invention, there is provided a micromachine manufacturing method according to the seventeenth, nineteenth, twenty-third and second aspects.
The manufacturing method according to any one of 6, 28, 30, 33, 36, or 42, wherein the irradiation direction of the beam of the gas in forming the axially oriented polycrystalline thin film, and the axially oriented polycrystalline thin film. And one of the plurality of irradiation directions of the gas beam when converting into a single crystal thin film are the same as each other.

In the present invention, the "gas beam" means
This is a concept that includes any of a beam-like ion flow, an atomic flow, and a molecular flow.

[0073]

[Action]

<Operation of the Invention of Claim 1> In the manufacturing method of the present invention, the layer of a predetermined substance formed on the sacrificial layer is irradiated with a beam of gas at a predetermined temperature, and the Brave's law acts. Then, this layer is converted into a single crystal layer. After that, by removing the sacrificial layer, for example, a member having a structure in which at least a part of the beam, the bridge, the diaphragm, the movable portion, the hollow container, and the fluid channel is separated without being adhered to the base material is formed. It is possible to manufacture a micromachine having a crystal layer. Therefore, in the micromachine manufactured by this method, in the member separated from the base material,
High strength, low wear, high elastic limit, excellent corrosion resistance, and high uniformity of properties. Moreover, since the member having the single crystal layer is formed on the substrate on the spot without joining or assembling, a micromachine which is easy to manufacture and has high precision can be realized.

<Operation of the Invention According to Claim 2> In the manufacturing method of the present invention, for example, a cantilever, a bridge, a diaphragm or the like is fixedly supported on a part of the substrate that is out of the selective etching, and It is possible to manufacture a micromachine having a single crystal layer in a member having a structure in which a portion of is crossed over a cavity formed by selective etching of a substrate. Therefore, in the micromachine manufactured by this method, members such as cantilevers and bridges have high strength, low wear, high elastic limit, excellent corrosion resistance, and high property uniformity. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. Therefore, this manufacturing method is suitable for configuring a micromachine that functions as an accelerometer, a stress gauge, a pressure gauge, or the like that utilizes elastic deformation of this member. In addition, since the member having the single crystal layer is formed on the base material in situ without joining, it is easy to manufacture and a highly accurate micromachine is realized.

<Operation of the Invention According to Claim 3> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge or a diaphragm has a semiconductor single crystal layer, and a base material is provided via an electric insulator. It is possible to manufacture a micromachine fixedly supported on the. Therefore, in the micromachine manufactured by this method, when an electronic circuit element such as a sensor is incorporated in a single crystal layer of a member such as a bridge, a signal current does not leak to the base material. Normal operation of the device is guaranteed.

<Operation of the Invention According to Claim 4> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge or a diaphragm has a semiconductor single crystal layer, and a strain sensor is incorporated in this single crystal layer. Micromachines can be manufactured. Since this micromachine can detect the deformation of a member such as a cantilever with a strain sensor, it can function as an accelerometer, a stress gauge, a pressure gauge, or the like.
Further, since the member such as the cantilever has the single crystal layer, it is excellent in strength and elastic limit, so that it is possible to give a large elastic deformation to this member. For this reason,
Realizes accelerometers, stress gauges, pressure gauges, etc. with a wide operating range. Moreover, in this manufacturing method, since a member having a single crystal layer such as a cantilever is formed on the base material in-situ without joining, manufacturing is easy and a highly accurate micromachine is realized.

<Operation of the Invention According to Claim 5> In the manufacturing method of the present invention, for example, a fixed beam, a hollow container, a fluid channel, etc., are partially supported by the base material and the other portions are fixed. It is possible to manufacture a micromachine that includes a member having a gap between the substrate and the member and that has the single crystal layer. Therefore, in the micromachine manufactured by this method, members such as fixed beams are excellent in strength, wear resistance, elastic limit, corrosion resistance, and uniformity of characteristics. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. For this reason, this method is suitable for constructing, for example, a micromachine that functions as an electrostatic actuator. In addition, since this member has excellent corrosion resistance, this method can be applied to, for example, a fluid filter,
Alternatively, it is also suitable for constructing a micromachine that functions as a fluid valve. Moreover, since the member having the single crystal layer is formed on the base material in situ without joining, a micromachine which is easy to manufacture and has high accuracy can be realized.

<Operation of Invention of Claim 6> In the manufacturing method of the present invention, the sacrifice layer is smoothly removed by forming an opening in the material layer and performing etching through the opening. Therefore, this method is suitable for manufacturing a micromachine in which the opening is utilized as it is, such as a fluid filter in which the opening functions as a fluid path.

<Operation of the Invention According to Claim 7> In the manufacturing method of the present invention, a part is fixedly supported by the base material and the other part is the base material, such as a hollow container and a fluid channel. It is possible to manufacture a micromachine in which a member having a hollow portion is provided between the two and other members are inserted into the hollow portion, and these members both have a single crystal layer.
Since these members have a single crystal layer, they are excellent in strength, wear resistance, elastic limit, corrosion resistance, and uniformity of properties. Since these members have excellent corrosion resistance and wear resistance, this method is suitable for constructing a micromachine that functions as a fluid valve, for example. Also, since the member inserted in the hollow part is excellent in strength and elasticity limit,
It is possible to give a large deformation to this member. Therefore, this method is also suitable for constituting a micromachine that functions as a pressure gauge having a structure in which a vibrator is inserted in a hollow portion, for example. Moreover, since the member having these single crystal layers is formed on the base material in situ without joining, a micromachine which is easy to manufacture and has high accuracy can be realized.

<Operation of the Invention According to Claim 8> In the manufacturing method of the present invention, for example, a part of a cantilever, a bridge, a diaphragm, etc. is fixedly supported on the peripheral portion of the recessed portion of the base material, and the other portion. It is possible to manufacture a micromachine having a single crystal layer in a member having a structure in which is inserted into a cavity defined by the recess of the base material. Therefore, in the micromachine manufactured by this method, members such as cantilevers and bridges have high strength, low wear, high elastic limit, excellent corrosion resistance, and high property uniformity. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. Therefore, this manufacturing method is suitable for configuring a micromachine that functions as an accelerometer, a stress gauge, a pressure gauge, or the like that utilizes elastic deformation of this member. In addition, since the member having the single crystal layer is formed on the base material in situ without joining, it is easy to manufacture and a highly accurate micromachine is realized.

<Operation of the Invention According to Claim 9> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge, or a diaphragm has a semiconductor single crystal layer, and a base material is provided via an electric insulator. It is possible to manufacture a micromachine fixedly supported on the. Therefore, in the micromachine manufactured by this method, when an electronic circuit element such as a sensor is incorporated in a single crystal layer of a member such as a bridge, a signal current does not leak to the base material. Normal operation of the device is guaranteed.

<Operation of the Invention According to Claim 10> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge, or a diaphragm has a semiconductor single crystal layer, and a strain sensor is incorporated in this single crystal layer. Micromachines can be manufactured. Since this micromachine can detect the deformation of a member such as a cantilever with a strain sensor, it can function as an accelerometer, a stress gauge, a pressure gauge, or the like. Further, since the member such as the cantilever has the single crystal layer, it is excellent in strength and elastic limit, so that it is possible to give a large elastic deformation to this member. Therefore, an accelerometer, a stress gauge, a pressure gauge, etc. having a wide operating range can be realized. Moreover, in this manufacturing method, since a member having a single crystal layer such as a cantilever is formed on the base material in-situ without joining, manufacturing is easy and a highly accurate micromachine is realized.

<Operation of the Invention According to Claim 11> In the manufacturing method of the present invention, when the base material is selectively etched, a single crystal layer having a crystal orientation for suppressing the progress of etching is formed on the base material. Then, etch this single crystal layer.
Used as a stopper. In addition, since a single crystal layer is formed by beam irradiation, it is possible to form a single crystal layer on any base material regardless of the material of the base material, the presence or absence of crystallinity, the size of crystal grains, the crystal structure, the crystal orientation, etc. It is possible to form a single crystal layer having the substance, crystal orientation, and crystal structure, and in situ.
Therefore, it is possible to easily manufacture a micromachine including a single crystal layer as a constituent element and having a complicated structure.

<Operation of the Invention According to Claim 12> In the manufacturing method of the present invention, after the use as the etching stopper is completed, the crystallographic orientation of the single crystal layer of the predetermined substance matches the crystallographic orientation of the base material. To convert. Therefore, according to this method, it is possible to manufacture a micromachine having a complicated structure with a material having a certain substance and a crystal orientation. That is, the micromachine manufactured by this method forms an integral structure as if the base material was grown and shaped into a complicated shape. So this method
In particular, it is possible to manufacture a micromachine having excellent strength and uniformity of characteristics of each part.

<Operation of the Invention According to Claim 13> In the manufacturing method of the present invention, when the base material is selectively etched, a single crystal layer having a crystal orientation for suppressing the progress of etching is selected on the base material. And then use this single crystal layer as an etching mask. Moreover, since a single crystal layer is formed by beam irradiation, it is possible to form a single crystal layer on the upper surface of any base material regardless of the material of the base material, the presence or absence of crystallinity, the size of crystal grains, the crystal structure, the crystal orientation, etc. It is possible to form a single crystal layer having a crystal orientation and a crystal structure of, and in situ. Therefore, it is possible to easily and precisely manufacture a micromachine having a complicated structure.

<Operation of the Invention According to Claim 14> In the manufacturing method of the present invention, after the use as the etching mask is completed, the crystal orientation of the single crystal layer of a predetermined substance is made to match the original crystal orientation. Convert to. For this reason, this method makes it possible to manufacture micromachines in which the etching mask leaves no trace. In particular, when the entire substrate has a single crystal structure, it is possible to manufacture a micromachine having a complicated structure with a material having a certain substance and a crystal orientation. In this case, it is possible to manufacture a micromachine that is particularly excellent in strength and uniformity of characteristics of each part.

<Operation of the Invention According to Claim 15> In the method of the present invention, since the atomic weight of the element forming the gas beam is lower than the maximum atomic weight of the elements forming the substance to be irradiated, Most of the atoms constituting the irradiated gas are scattered backward on the surface of the irradiated substance or in the vicinity thereof, and are hard to remain in the irradiated substance. Therefore, a single crystal thin film with few impurities can be obtained.

<Operation of the Invention of Claims 16 to 44> In the manufacturing method of the invention, in the invention of any one of claims 1 to 15, an axis is formed instead of forming a single crystal layer. An oriented polycrystalline layer is formed, or an axial oriented polycrystalline layer is once formed and then converted into a single crystalline layer.

By irradiating a gas beam from one direction instead of the gas beams from a plurality of directions used when forming a single crystal layer, the densest plane is oriented so that it is perpendicular to the irradiation direction. An axially oriented polycrystalline layer can be formed. In the manufacturing method of the present invention, a micromachine having an axially oriented polycrystalline layer is manufactured by using this method. Thereby, the manufacturing is easier than the manufacturing of the micromachine including the single crystal layer. Moreover, since the axially oriented polycrystalline layer has characteristics similar to a single crystalline layer in all respects as compared with a normal polycrystalline layer, a micromachine having an axially oriented polycrystalline layer to be manufactured is a micromachine having a single crystalline layer. It has near excellent characteristics.

Further, by irradiating the axially oriented polycrystalline layer once formed with a gas beam from a plurality of directions, it is possible to convert it into a single crystalline layer. By using this method, even if the formation of the single crystal layer is only partially performed, at least the axially oriented polycrystalline layer is already formed. The characteristics are guaranteed.

<Operation of the Invention of Claim 45> According to the manufacturing method of the present invention, the irradiation direction of the gas beam at the time of forming the axially oriented polycrystalline thin film and the axially oriented polycrystalline thin film is converted into a single crystal thin film. In this case, one of a plurality of irradiation directions of the gas beam is the same as each other, so that the conversion to the single crystal thin film is smoothly performed.

[0092]

【Example】

<A. Basic Principle of Single Crystal Thin Film Formation> Here, the basic principle of efficiently forming a single crystal thin film on a substrate will be described.

<A-1. Basic Structure of Device 101> FIG. 1 is a front sectional view showing an example of the basic structure of a device for forming a single crystal thin film. This device 101 forms a single crystal thin film on a substrate by converting a polycrystalline thin film previously formed on the substrate 11 into a single crystal thin film.

In this apparatus 101, an electron cyclotron resonance (ECR) ion source 2 is provided above the processing container 1.
Is built in. The ECR ion source 2 includes a plasma container 3 that defines a plasma chamber 4 therein. A magnetic coil 5 for applying a high DC magnetic field to the plasma chamber 4 is installed around the plasma container 3. A waveguide 6 for introducing microwaves into the plasma chamber 4 and an inert gas introduction pipe 7 for introducing an inert gas such as Ne are provided on the upper surface of the plasma container 3.

The processing container 1 defines an irradiation chamber 8 therein. The bottom of the plasma container 3 defines in its central part an outlet 9 through which the plasma passes. The irradiation chamber 8 and the plasma chamber 4 communicate with each other through the outlet 9. Inside the irradiation chamber 8, a sample table 10 is provided directly below the outlet 9.
Is installed. A substrate 11 is placed on the sample table 10, and a reflection plate 12 is installed so as to be located above the substrate 11. The sample table 10 is provided with a heater (not shown), and the substrate 11 is heated by the action of this heater,
Keep at an appropriate high temperature.

A vacuum exhaust pipe 14 communicates with the irradiation chamber 8. A vacuum device (not shown) is connected to one end of the vacuum exhaust pipe 14, and the gas existing in the irradiation chamber 8 is exhausted through the vacuum exhaust pipe 14, so that the degree of vacuum in the irradiation chamber 8 is predetermined. Held at the height of. A vacuum gauge 15 that displays the degree of vacuum in the irradiation chamber 8 is installed in communication with the irradiation chamber 8.

<A-2. Structure of Reflector> FIG.
It is a perspective view in an example. The reflector 12a is an example of a reflector for forming a single crystal having a diamond structure, such as single crystal Si. The reflector 12a defines an opening at the center of the flat base 21. Three rectangular parallelepiped blocks 22 are fixedly installed around the opening, and reflection blocks 23 are fixed inside the blocks. As a result, an equilateral triangular opening 24 framed by these reflection blocks 23 is formed in the center of the base 21. In the reflection block 23, the slope 25 facing the opening 24 functions as a reflection surface that reflects the gas beam. Therefore, the inclination angle of the inclined surface 25 is set to an appropriate size corresponding to the direction of the crystal axis of the single crystal to be formed.

FIG. 3 shows a block 22 and a reflection block 2.
3 (a), 3 (b), and 3 (c) are a plan view, a side view, and a front view, respectively. Figure 3
As shown in (b), the inclination angle of the slope 25 is 55.
Set to °.

<A-3. Operation of ECR Ion Source> Returning to FIG. 1, the operation of the ECR ion source 2 will be described. While introducing an inert gas such as Ne or Ar from the inert gas introducing pipe 7 into the plasma chamber 4, at the same time, from the waveguide 6 to the plasma chamber 4
Microwave is introduced into. At the same time, the magnetic coil 5
A DC magnetic field is formed in and around the plasma chamber 4 by supplying a DC current to the plasma chamber 4. The supplied gas is kept in a plasma state by the action of the microwave and the DC magnetic field. This plasma is generated by high-energy electrons that spiral in accordance with the cyclotron principle by the microwave and the DC magnetic field.

Since this electron has the property of diamagnetism,
It moves to the weak magnetic field and forms an electron flow along the magnetic field lines. As a result, in order to maintain the electrical neutrality, the positive ions also form an ion flow along the magnetic field lines along with the electron flow. That is, a downward electron flow and ion flow are formed from the outlet 9 to the irradiation chamber 8. Since the ion current flows in parallel with the electron current, when the deionization time elapses,
Recombination with each other results in a neutral atomic flow. Therefore, at a position separated from the outlet 9 by a predetermined distance or more, only a neutral atomic flow is formed.

As described above, since the ECR ion source 2 is an apparatus for generating ions, it forms the ion flow in parallel with the electron flow, so that it does not use any other means for neutralizing the ion flow. It has an advantage that a dense neutral atom flow can be easily obtained. Further, since the ion stream is formed in parallel with the electron stream, the traveling direction does not diverge so much, and an ion stream close to a parallel stream with a uniform traveling direction can be obtained. Further, since the parallel ion flow is converted into the neutral atomic flow, the atomic flow also becomes close to a parallel flow with uniform traveling directions. Therefore, there is an advantage that other means such as a collimator for correcting the directivity is not required.

<A-4. Basic Operation of Device 101> The basic operation of the device 101 will be described with reference to FIG. The reflector 1 shown in FIGS. 2 and 3 as the reflector 12.
2a is used, a polycrystalline SiO ₂ (quartz) substrate is used as the substrate 11, and an example of forming a single crystal Si thin film on the quartz substrate 11 will be taken up. CVD on the quartz substrate 11
Using a known method such as (chemical vapor deposition), polycrystalline S
The i thin film is previously formed.

First, the sample is placed on the sample table 10 and the reflector 12a.
Install between (12). The heater provided in the sample table 10 holds the sample, that is, the quartz substrate 11 and the polycrystalline Si thin film at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, single crystal Si does not transfer to polycrystalline Si under this temperature. At the same time, this temperature is so high that, if a seed crystal is present, polycrystalline Si can grow into single crystal Si using this seed crystal as a nucleus.

As the inert gas introduced from the inert gas introducing pipe 7, a Ne gas having an atomic weight smaller than that of Si atoms is preferably selected. Due to the action of the ECR ion source 2, a Ne ⁺ ion flow and an electron flow are formed downward from the outlet 9. The distance from the outlet 9 to the reflector 12a (12) is preferably such that the Ne ⁺ ion flow is almost neutral.
The size is set to be large enough to be converted into the atomic flow. Further, the reflector 12a (12) is installed at a position where the downward Ne atom flow is poured.

A part of the downward Ne atom flow is reflected by the three slopes 25 formed on the reflection plate 12a and further passes through the opening 24 to reach the polycrystalline Si thin film on the SiO ₂ substrate 11. Is irradiated. Further, the other part of the Ne atomic flow passes through the opening 24 without being incident on the slope 25 and is directly irradiated to the polycrystalline Si thin film. That is, polycrystalline S
The i thin film is irradiated with a four-component Ne atomic flow consisting of a component that has proceeded straight from the outlet 9 and three components that have been reflected by the three slopes 25. The slope angle of the slope 25 is 55
Since these are set at a temperature of 4 degrees, the irradiation directions of these four component Ne atomic flows correspond to four independent close-packed crystal planes of the Si single crystal to be formed, that is, four directions perpendicular to the (111) plane. To do.

By the way, regarding the energy of the plasma formed by the ECR ion source 2, the energy of Ne atoms reaching the SiO ₂ substrate 11 is lower than the threshold energy (= 27 eV) in the sputtering of Si by the irradiation of Ne atoms. Is set.
Therefore, the Brave's law acts on the polycrystalline Si thin film.
That is, the Si atoms in the vicinity of the surface of the polycrystalline Si thin film are rearranged so that the plane perpendicular to the incident direction of the Ne atomic flow irradiated on the polycrystalline Si thin film becomes the densest crystal plane. Since the irradiated Ne atomic flow has four components, and the incident directions of the respective components correspond to the directions perpendicular to the four independent close-packed planes of the single crystal Si, the rearrangement of Si atoms is rearranged. Is performed so that all the planes perpendicular to the incident direction are the densest planes. That is, the rearrangement directions of the four independent (111) planes are restricted to a constant direction by the four Ne atomic beams having incident directions independent of each other,
As a result, the crystal orientation is uniquely determined. Therefore, the layer near the surface of the polycrystalline Si thin film is converted into a single crystal Si layer having a uniform crystal orientation.

The temperature of the polycrystalline Si thin film is 5 as described above.
The temperature is adjusted to 50 ° C., that is, within the range suitable for growing the seed crystal. Therefore, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep portion of the polycrystalline Si thin film.
Then, the entire region of the polycrystalline Si thin film is converted into the single crystal Si layer. In this way, a single crystal Si layer having a uniform crystal orientation is formed on the quartz substrate 11.

The single crystal Si layer formed on the surface of the polycrystalline Si thin film by irradiation and functioning as a seed crystal is a polycrystalline S layer.
Since it is formed by converting the i thin film, it is integrated with the layer of polycrystalline Si remaining on the deep side thereof. That is, the contact between the layer of polycrystalline Si and the seed crystal is perfect. Therefore, the solid phase epitaxial growth in the vertical direction proceeds well. Further, since the seed crystal and the single crystal Si formed by solid phase epitaxial growth are both single crystals of the same substance having the same crystal orientation, it is not necessary to remove the seed crystal after forming the single crystal Si thin film. . In addition, since the single crystal Si thin film is formed by solid phase epitaxial growth in the vertical direction, the desired single crystal Si can be efficiently formed in a short time as compared with the conventional technique of growing in the horizontal direction.
A thin film can be obtained.

<A-5. Preferred Conditions> As described above, it is desirable to select Ne, which is lighter than Si atoms, as an element constituting the atomic beam with which the polycrystalline Si thin film is irradiated. This is because, when the Ne atoms are irradiated on the Si thin film, the relatively heavy Si atoms have a high probability of scattering the relatively light Ne atoms backward, and as a result, the Ne atoms penetrate into the Si thin film and remain. This is because it is unlikely to happen. When the thin film to be irradiated is not composed of a simple substance such as Si but is composed of a compound such as GaAs, it is preferable to irradiate an atom having an atomic weight smaller than that of the element having the maximum atomic weight. Also, instead of irradiating with a beam of monatoms, a beam of compounds such as N ₂
May be irradiated. At this time, it is desirable that the element constituting the compound (for example, N atom) is lighter than the element having the maximum atomic weight constituting the irradiated thin film.

Further, it is desirable to select an inactive element such as Ne as an element forming the atom beam for irradiation.
Because even if the inert element remains in the Si thin film,
Since it does not form a compound with any of the elements that make up the thin film such as Si, it has little effect on the electronic properties of the Si thin film and can be easily heated by heating the finished single crystal Si thin film to some extent. It can be removed to the outside.

The reflector 12 is preferably made of metal. Because N slightly mixed in the neutral Ne atomic flow
This is because when the e ⁺ ion flow is reflected by the conductive reflector 12, the Ne ⁺ ions are converted into neutral atoms and the substrate 11 is irradiated with the converted neutral Ne atom flow. Unlike the ionic flow, the neutral atomic flow is unlikely to diverge in the traveling direction, and therefore has the advantage of entering the substrate 11 as a unidirectional flow.

<A-6. Basic Configuration and Basic Operation of Device 100>
FIG. 4 is a front sectional view showing the basic structure of another apparatus for forming a single crystal thin film on a substrate. This device 100
Forms a polycrystalline thin film on the substrate 11 and simultaneously irradiates a beam at the same time to sequentially convert the growing polycrystalline thin film into a single crystalline thin film. Device 100
Then, the reaction gas supply pipe 13 communicates with the irradiation chamber 8.
A reaction gas for forming a thin film of a predetermined substance on the substrate 11 by plasma CVD is supplied through the reaction gas supply pipe 13. In the example of FIG. 4, three reaction gas supply pipes 13a, 13b, and 13c are provided.

The device 100 operates as follows. An example in which the reflector 12a shown in FIGS. 2 and 3 is used as the reflector 12 and polycrystalline SiO ₂ (quartz) is used as the substrate 11 and a thin film of single crystal Si is formed on the quartz substrate 11 will be taken up. Reaction gas supply pipes 13a, 13b, and 1
3c, SiH ₄ (silane) gas for supplying Si, which is the main material of single crystal Si, B ₂ H ₃ (diborane) gas for doping p-type impurities, and n-type impurities for doping PH ₃ (phosphine) gas is supplied. In addition, from the inert gas introduction pipe 7 to the plasma chamber 4
Ne gas is introduced.

[0114] silane gas supplied from the reaction gas supply pipe 13, the Ne ⁺ ion flow or Ne atoms stream produced by the ECR ion source 2, SiO ₂ substrate 11
Be slammed towards. As a result, the SiO ₂ substrate 1
1, a plasma CVD reaction proceeds on the upper surface of No. 1, and a thin film containing Si as a constituent element supplied by silane gas, that is, S
i Thin film grows. Further, by supplying diborane gas or phosphine gas while appropriately adjusting the flow rate thereof, the plasma CVD reaction by these gases also progresses at the same time, and a Si thin film containing B (boron) or P (phosphorus) at a desired concentration. Is formed.

The SiO ₂ substrate 11 is not heated. Therefore, the SiO ₂ substrate 11 is maintained at a substantially normal temperature. Therefore, the Si thin film grows at approximately normal temperature. That is,
The Si thin film is formed by plasma CVD at a temperature equal to or lower than the temperature at which crystallization proceeds. For this reason, the Si thin film is first formed into amorphous S by plasma CVD.
formed as i.

A downward Ne atom flow is generated by the apparatus 101.
In the same manner as in the above case, S is separated into four components by the action of the reflection plate 12a and is being formed on the upper surface of the SiO ₂ substrate 11.
i incident on the thin film. The incident directions of these four component Ne atomic flows correspond to four independent close-packed crystal planes of the Si single crystal to be formed, that is, four directions perpendicular to the (111) plane.
The energy of the plasma formed by the ECR ion source 2 is the incident energy of these four components is S
Threshold energy for i (= 27 eV)
Is set to be lower than. Therefore, the Brave's law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged so that the plane perpendicular to the incident direction of the four-component Ne atomic flow irradiated on the amorphous Si becomes the densest crystal plane. As a result, single crystal Si having a single crystal orientation is formed. That is, the amorphous Si thin film growing by plasma CVD is sequentially converted into a single crystal Si thin film having a uniform crystal orientation.

By supplying diborane gas or phosphine gas from the reaction gas supply pipe 13 at the same time as the silane gas, a p-type or n-type single crystal Si thin film to which B or P is added is formed. Further, it is possible to form an equiaxial n-type single crystal Si layer on, for example, a p-type single crystal Si layer by alternately supplying these reaction gases containing an impurity element.

As described above, the SiO ₂ substrate 11 is not heated and a Si thin film is formed at a temperature lower than the temperature at which crystallization proceeds by plasma CVD. This is because under high temperature where crystallization of Si proceeds only by plasma CVD without irradiation of Ne atomic flow, its crystal orientation becomes an arbitrary direction unrelated to the irradiation direction of Ne atomic flow, and the orientation is regulated. This is because it cannot be done, and a polycrystal is completed.

In the apparatus 100, S is formed by plasma CVD.
In the process of growing the i thin film, the conversion to the single crystal is successively advanced at the same time. Therefore, a single crystal Si thin film with a large thickness is
Moreover, it can be formed at a low temperature. Since a single crystal thin film can be formed at a low temperature, for example, a new single crystal thin film can be formed on a substrate on which a predetermined element is already formed without changing the characteristics of this element. . As described above, in the apparatus 100, not only the substrate having only a function as a thin film supporting material but also a device having a predetermined structure and function as a substrate can be used to form a single crystal thin film thereon. Is.

<A-7. Example of Other Single Crystal Thin Film Formation> It is also possible to form a single crystal thin film having a crystal structure other than the diamond structure.
It is advisable to prepare a reflector having a structure suitable for each crystal structure other than a and 12b. Further, it is possible to form single crystal thin films having various crystal orientations even if they have the same crystal structure. For that purpose, it is advisable to prepare a reflector suitable for each crystal orientation.

Further, in the devices 100 and 101, not only the Si single crystal thin film as in the above example but also, for example, GaA
It is possible to form various kinds of single crystal thin films such as compound single crystal thin films of s, GaN, etc., and insulator single crystal thin films of SiO _2, etc. on the substrate. Further, it is possible to form a single crystal thin film on a substrate using various kinds of media such as SiO ₂ , glass, polycrystalline / amorphous / single crystal semiconductor, and metal.

For example, when the single crystal thin film to be formed is a GaN single crystal thin film, first, a polycrystalline GaN film is grown on, for example, a Si substrate by a normal CVD method, and then the apparatus 101 is used. N ₂ (nitrogen) gas containing N atom or N
It is also possible to introduce H ₃ (ammonia) gas into the inert gas introduction pipe 7 and irradiate the GaN thin film with a beam of gas such as a molecular flow or a dissociated N atom flow. Even if the irradiated N atoms remain inside the GaN, they are incorporated into the single crystal as a constituent element of GaN, so there is no risk of adversely affecting the characteristics of GaN.

When forming a GaAs single crystal thin film, first, a GaAs polycrystal thin film is grown on a Si substrate or the like by a normal molecular beam epitaxy method, and then the apparatus 10 is used.
1, the substrate temperature is kept at 500 ° C., an inexpensive Ar gas is used as the irradiation gas, a Ta plate is used as the reflection plate, and the other conditions are the same as those for forming the Si single crystal thin film. Good. By this method, a single crystal thin film of GaAs can be obtained. Of course, these GaN, G
In order to generate the aAs single crystal thin film, the device 100 may be used instead of the device 101, and the formation of the polycrystalline thin film and the conversion to the single crystal by the irradiation of the gas beam may be simultaneously performed.

<B. Example of Micromachine and Manufacturing Method Thereof> Hereinafter, an example of a method of manufacturing a micromachine including a member having a single crystal layer based on the above method will be described.

<B-1. First Example><B-1-1. Machine Configuration and Operation> FIGS. 5 and 6 are a perspective view and a front sectional view showing the structure of the micromachine in the first embodiment, respectively. The micromachine 150 is a modification of the conventional electrostatic motor 2000. In this electrostatic motor 150, the single crystal Si substrate 1
A nitride film (Si ₃ N ₄ film) 112 is formed on the substrate 10. A rotating shaft 106 made of single crystal Si and a stator 108 are fixedly formed on the nitride film 112. Further, the ring-shaped rotor 104 also made of single crystal Si is locked to the rotary shaft 106 with play. Therefore, the rotor 104 can rotate about the rotation shaft 106.

Further, the stator 108 is formed by radially arranging a plurality of members electrically isolated from each other so as to surround the periphery of the rotor 104 with a predetermined gap. Alternating voltages that are out of phase with each other are applied individually to these members of the stator. As a result, an electrostatic attractive force or repulsive force is generated between the rotor and the rotor, and the bearers of these forces sequentially move between the members. Along with that, the rotor makes a rotary motion.

In this electrostatic motor 150, since the rotor 104 and the rotary shaft 106 that slide with each other are both made of hard single crystal Si, wear hardly occurs. Therefore, the electrostatic motor 150 can be used for a long period of time and can be put to practical use. Further, since the single crystal Si has excellent corrosion resistance, the electrostatic motor 150 is also suitable for use in a corrosive environment.

<B-1-2. Machine manufacturing method> FIGS. 7 to 1
FIG. 5 is a manufacturing process diagram showing the manufacturing method of the electrostatic motor 150. In order to manufacture this electrostatic motor 150, first, as shown in FIG. 7, CVD is performed on a single crystal Si substrate 110.
After forming the nitride film 112 by (chemical vapor deposition),
Similarly, a SiO ₂ layer 1 is formed on the nitride film 112 by CVD.
14 is formed.

Next, as shown in FIG. 8, the SiO ₂ layer 1
A mask film 116 having an opening is formed by forming a photoresist film on 14 and selectively removing it using a photolithography technique. After that, by performing etching with the mask material 116 as a shield,
The SiO ₂ layer 114 is selectively removed to a certain depth. When the etching is completed, the mask material 116 is removed.
The SiO ₂ layer 114 molded in this way functions as a sacrificial layer in a subsequent step.

Then, as shown in FIG. 9, the mask material 117 newly formed on the upper surface is used as a shield to perform an etching process to select the central portion 118 of the thin region of the SiO ₂ layer 114. And removed to expose the nitride film 112. After that, the mask material 117 is removed.

Subsequently, as shown in FIG. 10, a new mask material 120 is formed on the upper surface and etching is performed using this as a shield to selectively remove the peripheral portion of the SiO ₂ layer 114, In this region, the nitride film 11
Expose 2 After the etching process, the mask material 120
Are removed.

Next, as shown in FIG. 11, a polycrystalline Si (polysilicon) layer 122 is formed on the nitride film 112 and the SiO ₂ layer 114 by using CVD. The thickness of this polycrystalline Si layer 122 is about 2.5 μm. Then, using the device 101, the polycrystalline Si layer 122 is Ne-doped.
By irradiating with an atomic flow, this polycrystalline Si layer 12
2 is converted to a single crystal Si layer.

Subsequently, as shown in FIG. 12, a predetermined mask material (not shown) is formed on the upper surface, and etching is performed using this as a shield to form the single crystal Si layer 122. The openings 124 and 12 are selectively removed.
6 is formed. By this process, S converted into single crystal
The stator 108 and the rotor 104 are formed from the i layer 122.

Next, as shown in FIG. 13, a SiO ₂ layer 128 is newly formed on the upper surface by CVD.

Thereafter, as shown in FIG. 14, the opening 12
After selectively removing the region 132 of the SiO ₂ layer 128 corresponding to the central portion of 6, the second polycrystalline Si layer 130 is removed by CV.
It is formed by D. The SiO ₂ layer 128 functions as a second sacrificial layer. After that, the polycrystalline Si layer 130 is converted into a single crystal Si layer by performing irradiation of the Ne atomic flow using the apparatus 101.

Next, as shown in FIG. 15, etching is performed using a mask material (not shown) having a predetermined mask pattern as a shield, so that the single crystal Si layer 1 is formed.
30 is selectively removed. By this process, single crystal S
The rotary shaft 106 made of i and fixedly connected to the nitride film 112 is finished.

Finally, two sacrificial layers, SiO ₂ layers 114 and 128, are formed by performing an etching process.
Are removed at the same time. As a result, the electrostatic motor 1 shown in FIG.
50 is completed.

In this manufacturing method, the polycrystalline Si layer once formed on the sacrificial layer made of SiO ₂ is converted into the single crystal Si layer by irradiation with the Ne atomic flow. Therefore, it is possible to form a single crystal Si layer on the sacrificial layer.
For this reason, the rotor 104 and the rotating shaft 106 each having a structure in which at least a part is separated from the complex member composed of single crystal Si, particularly the nitride film 112 forming the base material, regardless of the joining technique.
Can be easily composed of single crystal Si.

Instead of forming the polycrystalline Si layers 122 and 130 and then converting them into single crystal Si layers, the device 1 is used.
00 while growing an amorphous Si layer and at the same time Ne
Single crystal Si layer 12 by performing irradiation of atomic flow
2, 130 may be formed. In any of these methods, there is no difference in forming a single crystal Si layer on the sacrificial layer.

<B-2. Second Embodiment> FIG. 16 is a front view showing a main part of a micromachine according to a second embodiment. The micromachine 300 has a diaphragm and can be used as, for example, a pressure sensor or the like. This micromachine 300 includes a single crystal Si thin film 30 on a top surface of a single crystal Si substrate 302 with a SiO ₂ film 304 interposed therebetween.
6 is formed. Substrate 302 and SiO ₂ film 30
The central part of 4 was selectively removed, and therefore Si
The central portion of the thin film 306 constitutes a diaphragm.

In this micromachine 300, since the diaphragm is made of single crystal Si, it is possible to give a large elastic deformation to the diaphragm. Further, since it is also excellent in corrosion resistance, it is suitable for use in a corrosive environment, for example, as a pressure sensor for measuring the pressure of a chemical solution. Further, since the insulating material is interposed between the Si thin film 306 and the substrate 302, when an electronic element such as a strain gauge is formed on the Si thin film 306, the electronic element and the substrate 30 are formed.
The two are electrically insulated. Therefore, there is an advantage that the normal operation of the electronic element is not hindered.

17 to 19 show this micromachine 3.
It is a manufacturing process drawing which shows the method of manufacturing 00. In order to manufacture this micromachine 300, first, as shown in FIG. 17, a single crystal Si substrate 308 is prepared. In this Si substrate 308, its (100) plane is along the upper surface.
Subsequently, an insulating SiO ₂ film 310 is formed on the upper surface of the Si substrate 308. Then, after forming a polycrystalline Si thin film 312 on the SiO ₂ film 310 by CVD, the polycrystalline Si thin film 312 is converted into a single crystal Si thin film by using the apparatus 100.

Next, as shown in FIG. 18, the Si substrate 3
A mask material 314 is selectively formed on the bottom surface of 08. After that, as shown in FIG. 19, etching is performed using the mask material 314 as a shield to selectively remove the substrate 302 from the bottom surface. At this time, an etchant is used such that etching hardly progresses on the (111) surface of the Si substrate 308 and the SiO ₂ film 310. Therefore, a V-shaped groove is formed on the bottom surface of the substrate 302. Since the SiO ₂ film 310 functions as an etching stopper (etching stopper), etching does not proceed to the inside of the SiO ₂ film 310 but stops at the bottom surface. Next, the SiO ₂ film 310 exposed in the groove is etched by using another etchant, whereby the micromachine 300 shown in FIG. 16 is completed.

A single crystal Si thin film 306 is formed by using the device 101 instead of the device 100 and irradiating it with a Ne atomic flow while growing an amorphous Si thin film on the SiO ₂ film 310. You may. In the manufacturing method of this embodiment, since the single-crystal Si thin film 306 is formed in situ on the SiO ₂ layer 304 without using a bonding technique, the micromachine 300 having the diaphragm made of single-crystal Si can be manufactured. It can be easily manufactured.

<B-3. Third Embodiment> FIG. 20 is a front view showing a main part of a micromachine according to a third embodiment. The micromachine 400 has a cantilever and can be used as, for example, an acceleration sensor.
This micromachine 400 includes a substrate 402 made of single crystal Si.
On the upper surface of the single crystal Si thin film 4 through the SiO ₂ layer 404.
06 and 408 are formed. The central portions of the substrate 402 and the SiO ₂ layer 404 are selectively removed, and one end of the Si thin film 406 is a free end without being connected to the substrate 402. That is, Si thin film 4
A cantilever is constituted by 06.

In this micromachine 400, since the cantilever is made of single crystal Si, it is possible to give a large elastic deformation to this cantilever. Also,
It is possible to configure a highly reliable acceleration sensor or the like having uniform characteristics such as elastic constants in the cantilever.

In order to manufacture this micromachine 400, first, the steps shown in FIGS. 17 to 19 in the method of manufacturing the micromachine 300 of the second embodiment are executed to obtain the single crystal Si substrate 302 (402) and SiO _2. Membrane 3
10 (410), single crystal Si thin film 312 (412),
And the intermediate body having the mask material 314 (414) is completed. After that, as shown in FIG. 21, a photoresist film 416 is formed on the single crystal Si thin film 412.

Next, as shown in FIG. 22, the mask material 418 having a predetermined mask pattern is formed by selectively removing the photoresist film 416. Then, the Si thin film 412 is selectively removed by etching using the mask material 418 as a shield. As a result, S separated from the Si thin film 412 is separated.
i thin films 406 and 408 are formed. Finally, SiO ₂
By removing the exposed portion of the film 410 by etching, the micromachine 400 having a cantilever shown in FIG. 20 is completed.

By using the device 101 instead of the device 100, a single crystal Si thin film 406 is formed by irradiating with a Ne atomic flow while growing an amorphous Si thin film on the SiO ₂ film 410. You may. In the manufacturing method of this embodiment, since the single crystal Si thin film 406 is formed in situ on the SiO ₂ film 404 without using a bonding technique, the micromachine 400 having a cantilever composed of single crystal Si is used. It can be easily manufactured.

<B-4. Fourth Preferred Embodiment> FIG. 23 is a front view showing a main part of a micromachine according to a fourth preferred embodiment. The micromachine 500 has a beam-structured member, a part of which is fixed to the base material and the rest of which is floated from the base material.
That is, the beam member 504 is fixedly connected at a specific portion 506 on the single crystal Si substrate 502 that functions as a base material. The remaining portion of the beam member 504 is separated from the surface of the substrate 502 with a constant space 508. This beam member 504 is also made of single crystal Si. Therefore, it is possible to give a large elastic deformation to the beam member 504. Further, the characteristics such as strength of the beam member 504 are uniform, and the micromachine 50 having high reliability is provided.
0 can be configured.

24 to 28 show this micromachine 5.
It is a manufacturing process drawing which shows the manufacturing method of 00. To manufacture this micromachine 500, first, as shown in FIG. 24, a SiO ₂ layer 510 functioning as a sacrificial layer is formed on a substrate 502.

Next, as shown in FIG. 25, a mask material 5 having a predetermined mask pattern on the SiO ₂ layer 510.
12 is formed. The mask material 512 defines the opening 514. Then, as shown in FIG. 26, etching is performed using the mask material 512 as a shield to form an opening 516 in the SiO ₂ layer 510. As a result, the substrate 50
The upper surface of No. 2 is exposed at this opening 516.

Continuing, as shown in FIG.
The single crystal Si layer 518 is formed by irradiating Ne atoms while forming an amorphous Si layer over the entire upper surface of the substrate 502 and the SiO ₂ layer 510 using 0.

Next, as shown in FIG. 28, single crystal S
After forming a mask material 520 having a predetermined mask pattern on the i layer 518, the Si layer 518 is selectively removed by performing an etching process using the mask material 520 as a shield. By this process, the Si layer 518 is molded into the shape of the beam member 504. Finally, the Si layer 518
The SiO ₂ layer 510 functioning as a sacrificial layer is completely removed by infiltrating the etchant from the portion 522 where the SiO ₂ was selectively removed. As a result, the micromachine 500 shown in FIG. 23 is completed.

In the manufacturing method of this embodiment, single crystal Si is used.
Since the layer 518 is formed in situ on the single crystal Si substrate 502 without using a bonding technique, the micromachine 500 having the beam member 504 composed of single crystal Si can be easily manufactured. .

<B-5. Fifth Embodiment><B-5-1. Linear Actuator> FIG. 29 is a plan view of the micromachine according to the fifth embodiment. This micromachine 600 is a modification of the conventional actuator 2030. In this actuator 600, a fixed electrode 610 also made of single crystal Si and a movable portion 606 also made of single crystal Si are formed on a single crystal Si substrate 602. This is different from the conventional actuator 2030 in that the fixed electrode 610 and the movable portion 606 are made of single crystal Si.

The comb-teeth-shaped fixed electrode 606 is fixed on the single-crystal Si substrate 602 at the base portion thereof, and the comb-teeth-shaped protrusions are spaced from the upper surface of the single-crystal Si substrate 602 by a predetermined distance. It has risen. In addition, the movable portion 606 includes the single crystal Si substrate 6 only in the support portion 604.
No. 02 fixed, all other parts are single crystal Si substrate 60
It floats up from the upper surface of 2 with a predetermined space. That is, the movable portion 606 and the fixed electrode 610 are both
Beam member 50 in micromachine 500 of the fourth embodiment.
4 is an example. The movable portion 606 also has a comb tooth-shaped tip portion 608, and the tip portion 608 meshes with the fixed electrode 610 without making contact with each other.

When a voltage is applied to the fixed electrode 610, an electrostatic attractive force or repulsive force acts between the fixed electrode 610 and the tip portion 608, and accordingly, the tip portion 608 is linearly displaced in the horizontal plane. That is, this actuator 600
Is a linear actuator. At this time, the tip 6
The member connecting between 08 and the support portion 604 is the tip portion 6
An elastic member that is the source of the restoring force for the displacement of 08,
As the tip portion 608 is displaced, it is elastically deformed. Unlike the conventional actuator 2030, the movable portion 606 that elastically deforms is made of single crystal Si, so that a large elastic deformation can be applied to the movable portion 606.

This actuator 600 is manufactured by the same process as the process of manufacturing the micromachine 500. That is, the micromachine 600 is manufactured by using the sacrificial layer and forming the single crystal Si layer on the sacrificial layer. That is, a member having a complicated shape such as the movable portion 606 and the fixed electrode 610, which is made of single crystal Si, is used without using a bonding technique, and the single crystal Si substrate 602 is used.
Since it is formed on the spot in-situ, it is easy to manufacture and it is possible to manufacture the actuator 600 with high accuracy.

<B-5-2. Rotating actuator> Fig. 30
FIG. 14 is a perspective view of another micromachine in the fifth embodiment. The micromachine 620 has a movable part 62.
6 functions as an actuator that performs a rotational movement. In this actuator 620, a fixed electrode 630 also made of single crystal Si on a single crystal Si substrate 622,
A movable part 626, which is also made of single crystal Si, is formed.

The comb-teeth-shaped fixed electrode 626 is fixed on the single-crystal Si substrate 622 at the base thereof, and the comb-teeth-shaped protrusions are spaced from the upper surface of the single-crystal Si substrate 622 by a predetermined distance. It has risen. Further, the movable portion 626 has the single crystal Si substrate 6 only in the support portion 624.
Fixed to No. 22 and all other parts are single crystal Si substrate 62.
It floats up from the upper surface of 2 with a predetermined space. That is, the movable portion 626 and the fixed electrode 630 are both
Similar to the actuator 600, it is an example of the beam member 504 in the micromachine 500 of the fourth embodiment. The movable portion 626 also has comb-teeth-shaped tip portions 628, and the tip portions 628 mesh with each other without contacting the fixed electrode 630. The actuator 600 is characteristically different in that the tooth-shaped protrusions of these combs protrude in the direction along the circumference.

When a voltage is applied to the fixed electrode 630, an electrostatic attractive force or a repulsive force acts between the fixed electrode 630 and the tip portion 628, and accordingly, the tip portion 628 is displaced in the direction along the circumference. . At this time, the tip portion 628 and the support portion 6
The member connecting between the end portion 628 and 24 is an elastic member that serves as a source of restoring force to the displacement of the tip portion 628, and is elastically deformed as the tip portion 628 is displaced. Since the movable portion 626 that elastically deforms is made of single crystal Si, it is possible to give a large elastic deformation to the movable portion 626.

Like the actuator 600, the actuator 620 is manufactured by the same process as the process for manufacturing the micromachine 500. That is, the actuator 620 is manufactured by using the sacrificial layer and forming the single crystal Si layer on the sacrificial layer. That is, since members having a complicated shape such as the movable portion 626 and the fixed electrode 630 and made of single crystal Si are formed in situ on the single crystal Si substrate 622 without using a bonding technique. It is possible to manufacture the actuator 620 which is easy to manufacture and has high accuracy.

<B-5-3. Relay> FIG. 31 and FIG. 32
FIG. 9A is a front sectional view and a perspective view of still another micromachine in the fifth embodiment. This micromachine 640
Is a two-contact type relay that opens and closes the contact by tilting the movable portion 644 by the action of electrostatic attraction or repulsion. In this relay 640, a pair of drive electrodes 648a and 648b and two pairs of contact electrodes 650a and 650b are formed on the upper surface of the glass substrate 642. These electrodes are formed by depositing a thin film of Au (gold) and selectively removing it. Movable part 644 for opening and closing contacts
Is made of single crystal Si, and is fixedly connected to the upper surface of the glass substrate 642 at its central portion 646, and the other portions are lifted from the upper surface of the glass substrate 642. That is, the movable portion 644 is an example of the beam member 504 in the micromachine 500 of the fourth embodiment.

When a voltage is applied to the drive electrodes 648a and 648b, the movable portion 644 elastically deforms to close one of the two pairs of contact electrodes 650a and 650b.
Open the other. Since the movable portion 644 is made of single crystal Si, a large elastic deformation can be given. For this reason, the contact interval at the time of opening can be set large, so that a highly reliable relay having a high withstand voltage can be configured.

To form the movable portion 644 on the glass substrate 642, the beam member 50 in the micromachine 500 is used.
The process similar to the process of forming 4 may be performed. That is, the movable portion 644 is formed by using the sacrificial layer and forming the single crystal Si layer on the sacrificial layer. Further, in this method, since a method of forming a single crystal Si layer by irradiation of an atomic flow is used, single crystal Si is formed on a glass substrate 642 which is amorphous and different from Si, without depending on a bonding technique.
It is possible to form layers. Therefore, it is possible to manufacture the relay 640 with high precision while being easy to manufacture.

<B-6. Sixth Embodiment><B-6-1. Hollow Container> FIG. 33 is a front sectional view of a micromachine in the sixth embodiment. The micromachine 700 is a hollow container that defines a cavity 706 inside. This hollow container 700 has a substrate 7 that defines a groove on its upper surface.
02 and an upper lid 704 that defines a groove on the lower surface. Both the substrate 702 and the upper lid 704 are made of single crystal Si. Therefore, this hollow container 70
0 is excellent in strength, corrosion resistance, etc., and is therefore suitable for corrosive fluid channels, valves, and the like.

34 to 37 are process drawings showing a method for manufacturing the hollow container 700. In order to manufacture the hollow container 700, first, as shown in FIG. 34, the groove 708 is formed by selectively removing the upper surface of the single crystal Si substrate 702.
To form. The crystal orientation of the single crystal Si substrate 702 is (1
The (00) plane is oriented along the upper surface, and when forming the groove 708, anisotropic etching in which the (100) plane is preferentially etched is used.

Next, as shown in FIG. 35, the substrate 702
A SiO ₂ layer 710 is formed over the entire upper surface of the substrate. Thereafter, as shown in FIG. 36, the SiO ₂ layer 710 is selectively removed to form a sacrificial layer 712 made of SiO ₂ .

Continuing on, as shown in FIG.
0 is used to form an amorphous Si layer on the upper surfaces of the sacrificial layer 712 and the substrate 702, and a Ne atomic flow is applied to form an upper lid 704 made of single crystal Si. Finally, the sacrificial layer 7 is formed by performing an etching process.
Remove all 12 As a result, the hollow container 700 shown in FIG. 33 is completed.

In the manufacturing method of this embodiment, since the upper lid portion 704 made of single crystal Si is formed on the single crystal Si substrate 602 in situ without using a bonding technique, the manufacturing is easy. At the same time, it is possible to manufacture the hollow container 700 with high dimensional accuracy.

<B-6-2. Hollow container for storing components> Figure 3
8 is a front sectional view of another micromachine in the sixth embodiment. The micromachine 730 is a hollow container that defines a cavity 736 inside, and the substrate 7
Cavity 736 defined by 32 and top lid 734
A plate-shaped member 738 is inserted in the. The hollow container 730 has the same structure as the above-mentioned hollow container 700 except that the member 738 is inserted. Hollow container 73
0 is made of single crystal Si including the member 738. Therefore, the hollow container 730 is excellent in strength, corrosion resistance and the like, and is suitable for a corrosive fluid valve or the like.
Further, since the elastic limit is excellent as well as the strength, the member 73
It is also suitable for use in a pressure sensor using 8 as a vibrator.

39 to 45 are process drawings showing a method of manufacturing the hollow container 730. To manufacture the hollow container 730, first, as shown in FIG. 39, a groove is formed by selectively removing the upper surface of the single crystal Si substrate 732. The crystal orientation of the single crystal Si substrate 732 is (100)
The surface is oriented along the upper surface, and when forming the groove, anisotropic etching in which the (100) surface is preferentially etched is used.

Next, as shown in FIG. 40, a substrate 732
Acting as a sacrificial layer over the entire upper surface of the SiO
_Two layers 740 are formed. Then, as shown in FIG.
After the polycrystalline Si layer 742 is formed on the SiO ₂ layer 740, the Si layer 742 is irradiated with a Ne atom flow by using the apparatus 100, so that the Si layer 742 is formed into single crystal Si.
Convert to layers. Subsequently, an etching treatment is performed by using a mask material (not shown) as a shield, so that the Si layer 742 is formed.
Are selectively removed to form a plate-shaped member 738 (see FIG. 4).
2).

Next, as shown in FIG. 43, another SiO ₂ layer 746 which functions as a sacrificial layer is newly formed on the upper surfaces of the SiO ₂ layer 740 and the member 738. afterwards,
As shown in FIG. 44, two SiO ₂ layers 740 and 746 are formed.
Are selectively removed.

Continuing on, as shown in FIG.
0 is used to grow an amorphous Si layer on the substrate 732 and the SiO ₂ layer 746, and is irradiated with a Ne atom flow to form an upper lid portion 734 composed of single crystal Si. Finally, the etching process produces two Si
The O ₂ layers 740 and 746 are all removed. As a result, the hollow container 730 shown in FIG. 38 is completed.

In the manufacturing method of this embodiment, the substrate 732 and the upper lid portion 73, which are three members made of single crystal Si, are used.
Other members are formed in situ on the single crystal Si substrate 732 regardless of the method of individually manufacturing 4 and the member 738 in advance and combining them using a bonding technique. For this reason, it is possible to manufacture the hollow container 730 which is easy to manufacture and has high dimensional accuracy.

<B-6-3. Pump: Part 1> FIG. 46 is a front sectional view of still another micromachine in the sixth embodiment. The micromachine 750 functions as a pump that pumps fluid. This pump 750 has a single crystal Si substrate 752 in which two V-shaped grooves functioning as a fluid inlet and a fluid outlet are formed.
A single-crystal Si electrode member 769 that is connected to the member 760 via a hollow container that is defined by two body members 754 and 760 and that defines a cavity 764 inside, and a spacer 766 that is made of glass that is an insulator. Is equipped with. A space 7 is provided between the member 760 and the electrode member 769.
68 is formed. Substrate 752 and body member 75
4 has a discharge valve 758 and a suction valve 756, respectively. A diaphragm 762 is formed on the upper surface of the main body member 760.

The pump 750 operates as follows. That is, as the alternating voltage is applied to the electrode member 769, the diaphragm 768 vibrates due to the action of electrostatic attraction or repulsion. As a result, the cavity 764
Since the volume of the fluid changes, the fluid is sucked in through the suction port and discharged through the discharge port. In this pump 750, all the members that come into contact with the fluid are made of single crystal Si. Therefore, the pump 750 is suitable for pumping a corrosive fluid. Also, a diaphragm 762 that repeats elastic deformation,
Since the two valves 756 and 758 are made of single crystal Si, the elastic deformation of these members can be increased, so that a compact pump having a large discharge amount can be realized.

In order to form the main body member 754 on the substrate 752 having the V-shaped groove, the manufacturing method of Example 11 described later may be used. In addition, the two body members 754, 7
To form a cavity 764 inside 60, hollow container 70
It is preferable to use the method for producing 0. Further, the main body member 76
0 via the glass spacer 766 to the electrode member 76.
To form 9, the following steps may be performed. That is, as shown in FIG. 47, after forming the glass film or the Si ₃ N ₄ film on the upper surface of the main body member 760, the glass film or the Si ₃ N ₄ film is selectively removed, and the spacer 766 is removed.
To form. Next, a sacrificial layer 77 composed of SiO ₂
Fill the voids 768 with 0. After that, a polycrystalline Si layer is formed on the sacrificial layer and the spacer 766 by CVD, and then the polycrystalline Si layer is converted into single crystal Si by using the apparatus 101 to form the electrode member 769. Through the above steps, the pump 750 shown in FIG.
Is completed.

As described above, according to this manufacturing method, a large number of members each having a complicated shape and made of single crystal Si are individually manufactured in advance, and they are combined by using a joining technique. , The single crystal Si substrate 752 is sequentially stacked to manufacture the pump 750. Therefore, it is possible to manufacture the pump 750 which is easy to manufacture and has high dimensional accuracy.

<B-7. Seventh embodiment><B-7-1. Pressure Sensor> FIG. 48 is a front sectional view of the micromachine in the seventh embodiment. The micromachine 800 is a pressure sensor, and the micromachine 3 described above is used.
00 has a structure in which a strain gauge 808 is incorporated. That is, in this pressure sensor 800, the single crystal Si is formed on the upper surface of the single crystal Si substrate 802 through the SiO ₂ film 804.
A thin film 806 is formed. Substrate 802 and SiO
The central portion of the ₂ film 804 is selectively removed, and thus the central portion of the Si thin film 806 constitutes a diaphragm. The diaphragm is elastically deformed when the pressure to be measured is applied. A strain gauge 808 is formed at a portion where the amount of strain associated with this elastic deformation is largest.

The pressure is measured through the amount of change in electric resistance of the strain gauge 808. Since the insulating material is interposed between the Si thin film 806 and the substrate 802, the strain gauge 808 and the substrate 802 are electrically insulated. Therefore, there is an advantage that the normal operation of the electronic element is not hindered.

In order to manufacture this pressure sensor 800, first, the steps shown in FIGS.
The structure shown in FIG. 49 is produced. Next, as shown in FIG. 50, a mask material 810 is formed on the upper surface of the Si thin film 806. The mask material 810 is provided with an opening at a predetermined portion by performing a selective etching process. After that, by using this mask material as a shield, for example, p-type impurity ions are selectively implanted into a portion corresponding to the opening 812 on the upper surface of the Si thin film 806. As a result, a p-type Si region functioning as a strain gauge is formed in the Si thin film 806. In this manufacturing method, the single crystal Si thin film 806 is formed in situ on the SiO ₂ layer 804 without using a bonding technique.
It is possible to easily manufacture the pressure sensor 800 having the diaphragm made of single crystal Si.

<B-7-2. Pressure Sensor Incorporating Signal Processing Circuit> FIG. 51 is a front sectional view showing another example of the pressure sensor. In this pressure sensor 820, a protective layer 832 made of single crystal Si is provided, and
The pressure sensor 800 is characteristically different in that an electronic circuit for processing a signal is incorporated in the protective layer 832. The single crystal Si substrate 822, the SiO ₂ film 824, the single crystal Si thin film 826, and the strain gauge 828 have the same structures as the corresponding members of the pressure sensor 300. The protective layer 832 defines a cavity above the diaphragm to allow the diaphragm to deform. Protective layer 83
An electronic circuit 836 is formed on the upper surface of No. 2 by selectively introducing impurities.
36 is connected to the strain gauge 828 via the wiring layers 830 and 834. In this pressure sensor 820,
Since the signal processing circuit is incorporated, there is no need to separately install the signal processing circuit outside the sensor, which is advantageous in that it is easy to handle.

A strain gauge 828 is obtained by performing a process similar to that of manufacturing the hollow container 700 (FIG. 33).
And the Si thin film 8 on which the wiring layer 830 is already formed
A protective layer 832 can be formed over the 26. By forming an opening at a predetermined portion of the protective layer 832 and selectively filling the wiring material, the wiring layer 830 on the Si thin film 826 and the electronic circuit 836 on the protective layer 832 are electrically connected. .

In this manufacturing method, a single crystal Si thin film 82 is used.
6 and the protective layer 832 without using a bonding technique.
Since the pressure sensor 820 is formed on the SiO ₂ layer 804 in-situ, the pressure sensor 820 can be easily manufactured with high dimensional accuracy.

<B-8. Eighth Embodiment> FIG. 52 is a front sectional view of a micromachine according to an eighth embodiment. This micromachine 900 is a fluid filter. In this fluid filter 900, the single crystal Si that defines the through hole 904 is used.
On the substrate 902, a plate-like member 906 that also defines a minute through hole 910 and is also made of single crystal Si is fixedly supported at a specific portion 908. Through hole 91
0 and the through hole 904 communicate with each other through a space 912 formed between the plate member 906 and the substrate 902.

The fluid passes through the through hole 904 from below the substrate 902.
And then passes through the gap 912 and the through hole 910 and exits above the plate member 906. Since the size of the through hole 910 is small, the particles having a large particle diameter are not included in the plate-like member 906.
Is blocked by. Since each member of the fluid filter 900 is made of single crystal Si, it has an advantage of high corrosion resistance. Therefore, it is suitable for filtering corrosive gases and liquids.

53 to 57 show this fluid filter 90.
It is process drawing which shows the method of manufacturing 0. To manufacture this fluid filter 900, first, as shown in FIG. 53, the through holes 904 are formed by subjecting the single crystal Si substrate 902 to selective etching using a mask material.

Next, as shown in FIG. 54, a SiO ₂ layer 914 functioning as a sacrificial layer is formed on the single crystal Si substrate 902 by using CVD. Then, as shown in FIG. 55, an opening 916 is formed in the SiO ₂ layer 914 by performing selective etching using a mask material.

Next, as shown in FIG. 56, the apparatus 100
By using a single crystal Si substrate 902 and S
A single crystal Si layer 918 is formed on the iO ₂ layer 914. Subsequently, by performing selective etching using a mask material, fine through holes 920 are formed in the Si layer 918.
To form. Finally, the etching process was used to remove SiO ₂
By removing all layers 914, the fluid filter 900 shown in FIG. 52 is completed.

In this manufacturing method, since the plate member 906 of single crystal Si is formed in situ on the single crystal Si substrate 902 without using a joining technique, the fluid filter 90
It is possible to manufacture 0 easily and with high dimensional accuracy.

<B-9. Ninth Embodiment> FIG. 58 is a front sectional view of a micromachine according to a ninth embodiment. This micromachine 1000 is a pressure sensor. In this pressure sensor 1000, a single crystal Si thin film 1008 is formed on the upper surface of a single crystal Si substrate 1002 via a SiO ₂ film 1006.
Are formed. Substrate 1002 and SiO ₂ film 10
The central portion of 06 has been selectively removed, so S
The central portion of the i thin film 1008 constitutes a diaphragm. A piezoresistive element 1012 that functions as a strain gauge is formed on the upper surface of the Si thin film 1008. A lead wire 1014 is connected to the piezoresistive element 1012. Si thin film 1008 and piezoresistive element 1012
Is covered with a protective film 1016 made of SiO ₂ . A through hole 1004 communicates with the groove 1010 that opens upward in a V shape. This pressure sensor 1000 is characteristically different from the pressure sensor 800 (FIG. 48) in that the groove 1010 immediately below the diaphragm opens upward in a V shape.

When a fluid having pressure enters the groove 1010 through the through hole 1004 and applies pressure to the diaphragm,
The diaphragm is elastically deformed. The pressure is measured by detecting this deformation amount with the piezoresistive element 1012.

In this pressure sensor 1000 as well, like the pressure sensor 800, all the members that come into contact with the fluid are made of single crystal Si, and are therefore suitable for measuring the pressure of corrosive fluids. Further, since the diaphragm is made of single crystal Si, it is possible to give a large elastic deformation to the diaphragm. Furthermore, the Si thin film 1008 and the substrate 1
Since the insulating material is interposed between the piezoresistive element 1012 and the substrate 002, the piezoresistive element 1012 and the substrate 1002 are electrically insulated from each other. Therefore, there is an advantage that the normal operation of the piezoresistive element 1012 is not disturbed.

59 to 66 are process drawings showing a method of manufacturing the pressure sensor 1000. This pressure sensor 10
To manufacture 00, first, as shown in FIG. 59, a mask material 1020 having an opening 1022 at a predetermined portion is formed on the lower surface of a single crystal Si substrate 1018. This mask material 1
Etching is performed using 020 as a shield to form a groove 1004 on the bottom surface of the substrate 1018.

Next, as shown in FIG. 60, a mask material 1026 having an opening at a predetermined portion is formed on the single crystal Si substrate 1.
It is formed on the upper surface of 018. By performing anisotropic etching using this mask material 1026 as a shield, the substrate 10
A groove 1010 is formed on the upper surface of 18. As a result, the substrate 1
002 is formed, and the groove 1004 communicates with the groove 1010 to form a through hole that penetrates the bottom of the substrate 1002.

Next, as shown in FIG. 61, the sacrificial layer 1 made of SiO ₂ or Si ₃ N ₄ (silicon nitride).
The groove 1010 is filled with 030. Thereafter, as shown in FIG. 62, the upper surface portion of the sacrificial layer 1030 is removed so that the upper surface portion of the substrate 1002 adjacent to the groove 1010 is exposed, and then SiO 2 is formed on the upper surfaces of the substrate 1002 and the sacrificial layer 1030.
_An insulating film 1032 composed of ₂ is formed.

Subsequently, as shown in FIG. 63, the insulating film 1
A polycrystalline Si thin film 1034 is formed on 032 by CVD. Then, as shown in FIG.
This Si thin film 1034 is single-crystallized by using. After that, the mask material 1036 formed on the upper surface of the single crystal Si thin film 1034 is used as a shield to implant impurity ions to selectively form the piezoresistive element 1012 in the Si thin film 1034.

Next, as shown in FIG. 65, the sacrifice layer 1030 is entirely removed by etching. At this time, the through hole 1004 functions as an etchant intrusion path and a dissolved sacrifice layer 1030 removal path. Subsequently, after aluminum is vapor-deposited on the upper surface of the Si thin film, the aluminum layer is selectively etched using a mask material to form an aluminum electrode 1014 connected to the piezoresistive element 1012. By connecting lead wires to these aluminum electrodes 1014 and applying a SiO ₂ protective film on the upper surface, the pressure sensor 1000 shown in FIG. 58 is completed.

Also in this manufacturing method, since the single crystal Si thin film 1008 is formed on the single crystal Si substrate 1002 without using a bonding technique, the pressure sensor 1000 can be easily manufactured with high dimensional accuracy. It is possible.

<B-10. Tenth Embodiment><B-10-1. Utilization of Single Crystal Layer as Etching Stopper> FIGS. 67 to 72 are process diagrams showing a method for manufacturing a micromachine in a tenth embodiment. in this way,
First, as shown in FIG. 67, a single crystal Si substrate 1102 is prepared. The crystal orientation of this substrate 1102 is (100)
The surface is oriented along the upper surface.

Next, as shown in FIG. 68, the device 101
By irradiating the top surface of the substrate 1102 with a Ne atomic flow by using (11).
1) Single crystal Si having a crystal orientation in which the plane is along the upper surface
Turn into a layer. Thereafter, as shown in FIG. 69, a mask material 1106 having an opening 1108 is formed on the bottom surface of the substrate 1102.

Next, as shown in FIG. 70, the mask material 1
Using 106 as a shield, anisotropic etching is performed to preferentially etch the (100) plane from the bottom surface of the substrate 1102. At this time, the uppermost layer 1104 functions as an etching stopper. As a result, a V-shaped groove 1112 that opens downward is formed. Above the groove 1112, the top layer 1
104 remains, and this part functions as a diaphragm.

Finally, as shown in FIG. 71, the mask material 1
By removing 102, the single crystal Si substrate 110
The micromachine with a single crystal Si diaphragm directly connected to 2 is completed. According to this manufacturing method, it is possible to easily manufacture a micromachine which is made of single crystal Si and has a complicated structure without using a bonding technique.

Further, as shown in FIG. 72, the apparatus 101 is used again to irradiate the upper surface of the uppermost layer 1104 with a Ne atom flow from a direction different from the step shown in FIG. The crystal orientation may be returned to the original crystal orientation such that (100) is along the upper surface. By doing so, the entire micromachine having a complicated structure is composed of single crystal Si having a fixed orientation. Therefore, a micromachine excellent in uniformity of characteristics of each part is realized.

<B-10-2. Application Example> The above-described manufacturing method using a single crystal layer having a specific crystal orientation as an etching stopper is, for example, a conventional pressure sensor 2230 (see FIG. 8).
In 2), the diaphragm 2234 is formed integrally with the substrate 2232 without being joined, and
It allows the thickness of 34 to be easily and consistently adjusted.
Further, in the conventional acceleration sensor 2300 (FIG. 83), the cantilever 2306 is used without using the joining technique.
Can be made of the same material as the substrate 2302.

Further, in the pressure sensor 2230 (FIG. 82), after a single crystal Si thin film is formed on the insulating film 2236 using the device 101 or the like, p-type impurities are selectively introduced, and further p-type impurities are removed. The piezoresistive element 2238 can be formed on the insulating film 2236 by selectively removing the other region of the single crystal Si thin film which has not been introduced. At this time, no joining technique is required in the process of manufacturing the pressure sensor 2230.

In this pressure sensor 2230, the piezoresistive element 2238 is formed independently on the insulating film 2236 without any other Si layer. There is no leakage to other regions on the insulating film 2236. Therefore, there is an advantage that the operation of the piezoresistive element 2238 is more surely guaranteed.

<B-11. Eleventh Embodiment> FIGS. 73 to 76
[FIG. 16A] is a process drawing showing the manufacturing method of the micromachine in the eleventh embodiment. In this method, first, as shown in FIG. 73, a mask material 1204 having an opening 1206 is formed on the upper surface of a single crystal Si substrate 1202, and then the device 101 is used.
Is used to selectively irradiate the atomic flow using the mask material 1204 as a shield. The crystal orientation of this substrate 1202 is
The (100) plane is oriented along the upper surface. By performing the irradiation, as shown in FIG.
The crystal orientation of the uppermost layer portion 1208 of the substrate 1202 corresponding to No. 6 is converted to the orientation having the (111) plane as the upper surface.

Next, as shown in FIG. 75, the substrate 120
Etching is performed from the upper surface of 2. At this time, the uppermost layer portion 1208 having a different crystal orientation functions as an etching mask, the portion excluding the uppermost layer portion 1208 is selectively removed, and the groove 1210 is formed. According to this manufacturing method, it is possible to easily manufacture a micromachine which is made of single crystal Si and has a complicated structure without using a bonding technique.

Further, as shown in FIG. 76, the apparatus 101 is used again to irradiate the upper surface of the uppermost layer portion 1208 with the Ne atomic flow from a direction different from the step shown in FIG. The crystal orientation of 1208 is (100)
May be returned to the original crystal orientation such that is along the upper surface. By doing so, the entire micromachine having a complicated structure is composed of single crystal Si having a fixed orientation. Therefore, a micromachine excellent in uniformity of characteristics of each part is realized.

<B-12. Twelfth Embodiment> In the above embodiments, other ion sources such as cage type and Kauffman type may be used instead of the ECR ion source. However, the ion flow formed at this time has a problem that the flow is diffused by the repulsive force due to static electricity between the ions and the directivity is weakened. Further, when the substrate 11 is directly irradiated with the ion stream, an electrically insulating substrate cannot be used. This is because the charges are accumulated on the substrate 11 and the irradiation does not proceed. Therefore, it is necessary to install a means for neutralizing the ions and converting them into an atomic flow in the path of the ion flow. Alternatively, the reflection plate 12 may be made of a conductive material such as metal to simultaneously reflect the ion current and convert it into a neutral atomic current.

On the other hand, the apparatus provided with the ECR ion source has an advantage that a neutral atomic flow can be easily obtained without using a means for neutralizing the ion flow and can be obtained in a form close to a parallel flow. . Therefore, it is possible to easily irradiate the thin film with the atomic flow having a high incident angle accuracy. Moreover, since a neutral atomic flow mainly enters the thin film, an insulating substrate such as a SiO ₂ substrate can be used as the substrate 11.

<B-13. Thirteenth Embodiment> In the above embodiments, the substrate 11 may be irradiated with a molecular flow or an ion flow instead of being irradiated with a neutral atomic flow. That is,
Generally, a gas beam may be irradiated. Also in this case, it is possible to form a single crystal thin film. However, in the case of irradiating with an ion stream, there is a drawback that an electrically insulating substrate cannot be used as described above.

<B-14. Fourteenth Embodiment> In the above embodiments, the single crystal layer is formed on the specific portion of the micromachine.
However, instead of the single crystal layer, an axially oriented polycrystalline layer may be formed.

84 and 85 are front sectional views showing an example of the basic structure of an apparatus suitable for forming an axially oriented polycrystalline layer. In these figures, the same parts as those in FIGS. 1 and 4 are designated by the same reference numerals, and detailed description thereof will be omitted. Axial-oriented polycrystalline thin film forming apparatus 13 shown in FIG.
01 is a gas such as a Ne atom flow from one direction to a thin film such as a polycrystalline thin film (which may be a normal polycrystalline structure in which each crystal grain is oriented in an arbitrary direction) previously formed on the substrate 11. This thin film is converted into an axially oriented polycrystalline thin film by irradiating it with a beam of, and as a result, an axially oriented polycrystalline thin film is formed on the substrate 11. On the other hand, the axially oriented polycrystalline thin film forming apparatus 1302 shown in FIG. 85 deposits a thin film such as an amorphous film on the substrate 11 in the same manner as the apparatus 100, and at the same time, a gas such as a Ne atomic flow is generated from one direction. Irradiation with a beam sequentially transforms the depositing thin film into an axially oriented polycrystalline thin film.

The devices 1301 and 1302 have a structure in which the reflection plate 12 is removed from the devices 101 and 100, respectively, whereby the gas beam is irradiated onto the substrate 11 from one direction. Bravais's law works by irradiating a beam of gas, but since the irradiation is performed from one direction, only one direction of the densest surface is regulated so as to be orthogonal to this irradiation direction, and the other densest surface. The direction of is not regulated. Therefore, the device 13
The thin film formed by 01, 1302 does not generally have a single crystal structure but an axially oriented polycrystalline structure in which only uniaxial directions are aligned.

In each of the first to thirteenth embodiments, the device 1301 or 1 is used instead of the single crystal layer.
302 may be used to form an axially oriented polycrystalline layer. The axially oriented polycrystalline layer has characteristics closer to a single crystalline layer than a normal polycrystalline layer. For example, it is superior to ordinary polycrystalline layers in terms of elastic limit, strength, abrasion resistance, corrosion resistance and the like. Therefore, in each of the above-described embodiments, by forming the axially oriented polycrystalline layer instead of the single crystal layer, a micromachine having excellent characteristics as compared with the conventional micromachine is realized.

The method of forming the axially oriented polycrystalline layer is not limited to the single crystal layer, since the irradiation direction is limited to one direction in the method of forming the single crystalline layer. The manufacturing method of the micromachine to be formed has an advantage that the manufacturing is easier than the manufacturing method of each of the above-described embodiments in which the single crystal layer is formed.

<B-15. Fifteenth embodiment> In the fourteenth embodiment, the axially oriented polycrystalline layer once formed may be converted into a single crystal layer. For the conversion to the single crystal layer, for example, the device 101 may be used. The formation of the axially oriented polycrystalline layer is easier than the formation of the single crystal layer, and the characteristics thereof are close to those of the single crystal layer. Therefore, when forming a single crystal layer on a specific portion of the micromachine, by forming the axially oriented polycrystalline layer on this specific portion first, good characteristics corresponding to the axially oriented polycrystalline layer can be secured. . Then, by irradiating the axially oriented polycrystalline layer with beams from a plurality of directions using the device 101 or the like, the characteristics are improved to a better degree depending on the degree of conversion of the axially oriented polycrystalline layer into a single crystal layer. To do. That is, this manufacturing method has an advantage that good characteristics at least corresponding to the axially oriented polycrystalline structure are guaranteed even if the conversion to the single crystal layer is not always sufficiently performed.

Further, the direction of the beam irradiated when forming the axially oriented polycrystalline layer and one direction among the plurality of beams irradiated when converting this layer into a single crystal layer thereafter are When they coincide with each other, the conversion to the single crystal layer is performed without changing the common uniaxial direction in the axially oriented polycrystalline layer, so that there is an advantage that the conversion to the single crystal layer proceeds smoothly in a short time. is there.

[0224]

【The invention's effect】

<Effect of the invention according to claim 1> In the manufacturing method of the present invention, for example, at least a part of a beam, a bridge, a diaphragm, a movable part, a hollow container, a fluid channel, or the like is separated without being fixed to the base material. It is possible to manufacture a micromachine having a single crystal layer as a member having the above structure. Therefore, in the micromachine manufactured by this method, the member separated from the base material has high strength, little wear, a high elastic limit, excellent corrosion resistance, and high uniformity of properties. Moreover, the member having this single crystal layer is bonded onto the base material,
Since it is formed on the spot irrespective of assembling, it is easy to manufacture, and it is possible to realize a highly accurate micromachine.

<Effect of the Invention According to Claim 2> In the manufacturing method of the present invention, for example, a part of the cantilever, a bridge, a diaphragm, etc., is fixedly supported at a part deviated from the selective etching of the substrate, It is possible to manufacture a micromachine having a single crystal layer in a member having a structure in which a portion of is crossed over a cavity formed by selective etching of a substrate. Therefore, in the micromachine manufactured by this method, members such as cantilevers and bridges have high strength, low wear, high elastic limit, excellent corrosion resistance, and high property uniformity. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. Therefore, this manufacturing method is suitable for configuring a micromachine that functions as an accelerometer, a stress gauge, a pressure gauge, or the like that utilizes elastic deformation of this member. Moreover, since the member having this single crystal layer is formed on the base material in situ without joining, there is an effect that a micromachine with high precision can be realized while being easy to manufacture.

<Effect of the Invention According to Claim 3> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge, or a diaphragm has a semiconductor single crystal layer, and a base material is provided via an electric insulator. It is possible to manufacture a micromachine fixedly supported on the. Therefore, in the micromachine manufactured by this method, when the electronic circuit element such as the sensor is incorporated in the single crystal layer of the member such as the bridge, the signal current does not leak to the base material. This has the effect of ensuring normal operation of the device.

<Effect of the Invention According to Claim 4> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge or a diaphragm has a semiconductor single crystal layer, and a strain sensor is incorporated in this single crystal layer. Micromachines can be manufactured. Since this micromachine can detect the deformation of a member such as a cantilever with a strain sensor, it can function as an accelerometer, a stress gauge, a pressure gauge, or the like.
Further, since the member such as the cantilever has the single crystal layer, it is excellent in strength and elastic limit, so that it is possible to give a large elastic deformation to this member. For this reason,
Realizes accelerometers, stress gauges, pressure gauges, etc. with a wide operating range. Moreover, in this manufacturing method, since a member having a single crystal layer such as a cantilever is formed on the base material in situ without joining, manufacturing is easy and a highly accurate micromachine can be realized. There is an effect.

<Effect of the Invention According to Claim 5> In the manufacturing method of the present invention, for example, a fixed beam, a hollow container, a fluid channel, etc., are partially fixedly supported by the base material and other parts are fixedly supported. It is possible to manufacture a micromachine that includes a member having a gap between the substrate and the member and that has the single crystal layer. Therefore, in the micromachine manufactured by this method, members such as fixed beams are excellent in strength, wear resistance, elastic limit, corrosion resistance, and uniformity of characteristics. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. For this reason, this method is suitable for constructing, for example, a micromachine that functions as an electrostatic actuator. In addition, since this member has excellent corrosion resistance, this method can be applied to, for example, a fluid filter,
Alternatively, it is also suitable for constructing a micromachine that functions as a fluid valve. Moreover, since the member having the single crystal layer is formed on the base material in situ without joining, there is an effect that a micromachine with high precision can be realized while being easy to manufacture.

<Effect of the Invention According to Claim 6> In the manufacturing method of the present invention, the sacrifice layer is smoothly removed by forming the opening in the material layer and performing the etching through the opening. Therefore, this method is suitable for manufacturing a micromachine in which the opening is utilized as it is, such as a fluid filter in which the opening functions as a fluid path.

<Effect of the Invention of Claim 7> In the manufacturing method of the present invention, a part is fixedly supported by the base material and the other part is the base material, such as a hollow container and a fluid channel. It is possible to manufacture a micromachine in which a member having a hollow portion is provided between the two and other members are inserted into the hollow portion, and these members both have a single crystal layer.
Since these members have a single crystal layer, they are excellent in strength, wear resistance, elastic limit, corrosion resistance, and uniformity of properties. Since these members have excellent corrosion resistance and wear resistance, this method is suitable for constructing a micromachine that functions as a fluid valve, for example. Also, since the member inserted in the hollow part is excellent in strength and elasticity limit,
It is possible to give a large deformation to this member. Therefore, this method is also suitable for constituting a micromachine that functions as a pressure gauge having a structure in which a vibrator is inserted in a hollow portion, for example. Moreover, since the member having these single crystal layers is formed on the base material in situ without joining, there is an effect that a micromachine with high accuracy can be realized while being easy to manufacture.

<Effect of the Invention According to Claim 8> In the manufacturing method of the present invention, for example, a part of a cantilever, a bridge, a diaphragm, etc. is fixedly supported by the peripheral portion of the recessed portion of the base material, and the other portion. It is possible to manufacture a micromachine having a single crystal layer in a member having a structure in which is inserted into a cavity defined by the recess of the base material. Therefore, in the micromachine manufactured by this method, members such as cantilevers and bridges have high strength, low wear, high elastic limit, excellent corrosion resistance, and high property uniformity. Since the elastic limit as well as the strength are excellent, it is possible to give a large elastic deformation to this member. Therefore, this manufacturing method is suitable for configuring a micromachine that functions as an accelerometer, a stress gauge, a pressure gauge, or the like that utilizes elastic deformation of this member. Moreover, since the member having this single crystal layer is formed on the base material in situ without joining, there is an effect that a micromachine with high precision can be realized while being easy to manufacture.

<Effect of the Invention According to Claim 9> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge, or a diaphragm has a semiconductor single crystal layer, and a base material is provided via an electric insulator. It is possible to manufacture a micromachine fixedly supported on the. Therefore, in the micromachine manufactured by this method, when the electronic circuit element such as the sensor is incorporated in the single crystal layer of the member such as the bridge, the signal current does not leak to the base material. This has the effect of ensuring normal operation of the device.

<Effect of the Invention According to Claim 10> In the manufacturing method of the present invention, for example, a member such as a cantilever, a bridge or a diaphragm has a semiconductor single crystal layer, and a strain sensor is incorporated in this single crystal layer. Micromachines can be manufactured. Since this micromachine can detect the deformation of a member such as a cantilever with a strain sensor, it can function as an accelerometer, a stress gauge, a pressure gauge, or the like. Further, since the member such as the cantilever has the single crystal layer, it is excellent in strength and elastic limit, so that it is possible to give a large elastic deformation to this member. Therefore, an accelerometer, a stress gauge, a pressure gauge, etc. having a wide operating range can be realized. Moreover, in this manufacturing method, since a member having a single crystal layer such as a cantilever is formed on the base material in situ without joining, manufacturing is easy and a highly accurate micromachine can be realized. There is an effect.

<Effect of the Invention According to Claim 11> In the manufacturing method of the present invention, when the base material is selectively etched, a single crystal layer having a crystal orientation for suppressing the progress of etching is formed on the base material. Then, etch this single crystal layer.
Used as a stopper. In addition, since a single crystal layer is formed by beam irradiation, it is possible to form a single crystal layer on any base material regardless of the material of the base material, the presence or absence of crystallinity, the size of crystal grains, the crystal structure, the crystal orientation, etc. It is possible to form a single crystal layer having the substance, crystal orientation, and crystal structure, and in situ.
Therefore, there is an effect that a micromachine including a single crystal layer as a constituent element and having a complicated structure can be easily manufactured.

<Effect of the Invention According to Claim 12> In the manufacturing method of the present invention, after the use as the etching stopper is completed, the crystal orientation of the single crystal layer of the predetermined substance is made to coincide with the crystal orientation of the substrate. To convert. Therefore, according to this method, it is possible to manufacture a micromachine having a complicated structure with a material having a certain substance and a crystal orientation. That is, the micromachine manufactured by this method forms an integral structure as if the base material was grown and shaped into a complicated shape. So this method
In particular, there is an effect that it is possible to manufacture a micromachine excellent in strength and uniformity of characteristics of each part.

<Effect of the Invention According to Claim 13> In the manufacturing method of the present invention, when the base material is selectively etched, a single crystal layer having a crystal orientation that suppresses the progress of etching is selected on the base material. And then use this single crystal layer as an etching mask. Moreover, since a single crystal layer is formed by beam irradiation, it is possible to form a single crystal layer on the upper surface of any base material regardless of the material of the base material, the presence or absence of crystallinity, the size of crystal grains, the crystal structure, the crystal orientation, etc. It is possible to form a single crystal layer having a crystal orientation and a crystal structure of, and in situ. Therefore, there is an effect that a micromachine having a complicated structure can be easily and precisely manufactured.

<Effect of the Invention According to Claim 14> In the manufacturing method of the present invention, after the use as an etching mask is completed, the crystal orientation of the single crystal layer of a predetermined substance is made to match the original crystal orientation. Convert to. For this reason, this method makes it possible to manufacture micromachines in which the etching mask leaves no trace. In particular, when the entire substrate has a single crystal structure, it is possible to manufacture a micromachine having a complicated structure with a material having a certain substance and a crystal orientation. In this case, it is possible to manufacture a micromachine that is particularly excellent in strength and uniformity of characteristics of each part.

<Effect of the Invention According to Claim 15> In the method of the present invention, since the atomic weight of the element constituting the gas beam is lower than the maximum atomic weight of the elements constituting the substance to be irradiated, Most of the atoms constituting the irradiated gas are scattered backward on the surface of the irradiated substance or in the vicinity thereof, and are hard to remain in the irradiated substance. Therefore, there is an effect that a single crystal thin film with few impurities can be obtained.

<Effects of the Invention of Claims 16 to 44> In the manufacturing method of this invention, in addition to forming a single crystal layer in the invention of any one of claims 1 to 15, an axis is formed. An oriented polycrystalline layer is formed, or an axial oriented polycrystalline layer is once formed and then converted into a single crystalline layer. In the manufacturing method of the present invention, since the unidirectional irradiation of the gas beam is used to form the axially oriented polycrystalline layer, the micromachine having the axially oriented polycrystalline layer can be manufactured more easily than the micromachine having the single crystal layer. can do. Moreover, since the axially oriented polycrystalline layer has properties similar to a single crystalline layer in all respects, such as elastic limit, strength, wear resistance, and corrosion resistance, compared with a normal polycrystalline layer, it was produced by this manufacturing method. A micromachine having an axially oriented polycrystalline layer has excellent characteristics close to those of a micromachine having a single crystal layer.

Further, in the manufacturing method of the present invention, in order to form the single crystal layer, the once-formed axially oriented polycrystalline layer is irradiated with a gas beam in a plurality of directions. Therefore, even if the single crystal layer is formed only partially, at least the axially oriented polycrystalline layer is already formed, so that the manufactured micromachine is guaranteed to have a certain degree or more of excellent characteristics. It

<Effect of the Invention of Claim 45> In the manufacturing method of the present invention, the irradiation direction of the gas beam in forming the axially oriented polycrystalline thin film and the axially oriented polycrystalline thin film are converted into a single crystal thin film. In this case, one of a plurality of irradiation directions of the gas beam is the same as each other, so that the conversion to the single crystal thin film is smoothly performed.

[Brief description of drawings]

FIG. 1 is a front sectional view showing an example of a basic configuration of a single crystal thin film forming apparatus of the present invention.

FIG. 2 is a perspective view showing an example of a reflector used in the single crystal thin film forming apparatus of the present invention.

FIG. 3 is a trihedral view showing an example of a reflector used in the single crystal thin film forming apparatus of the present invention.

FIG. 4 is a front sectional view showing another example of the basic configuration of the single crystal thin film forming apparatus of the present invention.

FIG. 5 is a perspective view of the micromachine according to the first embodiment of the present invention.

FIG. 6 is a front cross-sectional view of the micromachine according to the first embodiment of the present invention.

FIG. 7 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 8 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 9 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 10 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 11 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 12 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 13 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 14 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 15 is a process drawing showing the manufacturing method in the first embodiment of the present invention.

FIG. 16 is a front sectional view of a micromachine according to a second embodiment of the present invention.

FIG. 17 is a process drawing showing the manufacturing method in the second embodiment of the present invention.

FIG. 18 is a process drawing showing the manufacturing method in the second embodiment of the present invention.

FIG. 19 is a process drawing showing the manufacturing method in the second embodiment of the present invention.

FIG. 20 is a front sectional view of a micromachine according to a third embodiment of the present invention.

FIG. 21 is a process drawing showing the manufacturing method in the third embodiment of the present invention.

FIG. 22 is a process drawing showing the manufacturing method in the third embodiment of the present invention.

FIG. 23 is a front sectional view of a micromachine according to a fourth embodiment of the present invention.

FIG. 24 is a process drawing showing the manufacturing method in the fourth embodiment of the present invention.

FIG. 25 is a process drawing showing the manufacturing method in the fourth embodiment of the present invention.

FIG. 26 is a process drawing showing the manufacturing method in the fourth embodiment of the present invention.

FIG. 27 is a process drawing showing the manufacturing method in the fourth embodiment of the present invention.

FIG. 28 is a process drawing showing the manufacturing method in the fourth embodiment of the present invention.

FIG. 29 is a plan view of the micromachine according to the fifth embodiment of the present invention.

FIG. 30 is a perspective view of a micromachine according to a fifth embodiment of the present invention.

FIG. 31 is a front sectional view of a micromachine according to a fifth embodiment of the present invention.

FIG. 32 is a perspective view of a micromachine according to a fifth embodiment of the present invention.

FIG. 33 is a front sectional view of a micromachine according to a sixth embodiment of the present invention.

FIG. 34 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 35 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 36 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 37 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 38 is a front sectional view of a micromachine according to a sixth embodiment of the present invention.

FIG. 39 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 40 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 41 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 42 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 43 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 44 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 45 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 46 is a front sectional view of a micromachine according to a sixth embodiment of the present invention.

FIG. 47 is a process drawing showing the manufacturing method in the sixth embodiment of the present invention.

FIG. 48 is a front sectional view of a micromachine according to a seventh embodiment of the present invention.

FIG. 49 is a process drawing showing the manufacturing method in the seventh embodiment of the present invention.

FIG. 50 is a process drawing showing the manufacturing method in the seventh embodiment of the present invention.

FIG. 51 is a front sectional view of a micromachine according to a seventh embodiment of the present invention.

52 is a front sectional view of the micromachine according to the eighth embodiment of the present invention. FIG.

FIG. 53 is a process drawing showing the manufacturing method in the eighth embodiment of the present invention.

FIG. 54 is a process drawing showing the manufacturing method in the eighth embodiment of the present invention.

FIG. 55 is a process drawing showing the manufacturing method in the eighth embodiment of the present invention.

FIG. 56 is a process drawing showing the manufacturing method in the eighth embodiment of the present invention.

FIG. 57 is a process drawing showing the manufacturing method in the eighth embodiment of the present invention.

FIG. 58 is a front sectional view of a micromachine according to a ninth embodiment of the present invention.

FIG. 59 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 60 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 61 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 62 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 63 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 64 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 65 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 66 is a process drawing showing the manufacturing method in the ninth embodiment of the present invention.

FIG. 67 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 68 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 69 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 70 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 71 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 72 is a process drawing showing the manufacturing method in the tenth embodiment of the present invention.

FIG. 73 is a process drawing showing the manufacturing method in the eleventh embodiment of the present invention.

FIG. 74 is a process drawing showing the manufacturing method in the eleventh embodiment of the present invention.

FIG. 75 is a process drawing showing the manufacturing method in the eleventh embodiment of the present invention.

FIG. 76 is a process drawing showing the manufacturing method in the eleventh embodiment of the present invention.

FIG. 77 is a front sectional view of a conventional micromachine.

FIG. 78 is a process drawing showing the manufacturing method of the conventional micromachine.

FIG. 79 is a plan view of a conventional micromachine.

FIG. 80 is a perspective view of a conventional micromachine.

FIG. 81 is a front sectional view of a conventional micromachine.

FIG. 82 is a perspective view of a conventional micromachine.

FIG. 83 is a perspective view of a conventional micromachine.

FIG. 84 is a front sectional view of an apparatus suitable for carrying out the manufacturing method according to the fourteenth embodiment of the present invention.

FIG. 85 is a front sectional view of another device suitable for carrying out the manufacturing method according to the fourteenth embodiment of the present invention.

[Explanation of symbols]

2 ECR Ion Source 7 Inert Gas Introducing Tube 11 Substrate 12 Reflecting Plate 13 Reactive Gas Introducing Tube 100, 101 Single Crystal Thin Film Forming Device 104 Rotor 106 Rotating Shaft 108 Stator 110 Substrate 112 Nitriding Film 114 SiO ₂ Layer 122 Polycrystalline Si Layer 128 SiO ₂ layer 130 Polycrystalline Si layer 308 Si substrate 310 SiO ₂ film 306, 312 Si thin film 314 mask material 402 substrate 404, 410 SiO ₂ layer 406, 408, 412 Si thin film 414, 418 mask material 502 substrate 504 beam member 510 SiO ₂ layer 520 mask member 644 movable portion 702,732 substrate 704,734 upper cover 706,736 cavity 712 sacrificial layer 738 members 740,746 SiO ₂ layer 808 strain gauges 802 substrate 804 SiO ₂ film 806 Si thin film 810 the mask material 82 Substrate 824 SiO ₂ film 826 Si thin film 828 strain gauge 832 protective layer 830,834 wiring layer 836 electronic circuit 902 board 906 plate-shaped member 910 through holes 912 air gap 914 SiO ₂ layer 918 Si layer 1002 substrate 1006 SiO ₂ film 1008 Si thin film 1010 Groove 1012 Piezoresistive element 1020 Mask material 1030 Sacrificial layer 1032 Insulating film 1034 Si thin film 1036 Mask material 1102 Si substrate 1104 Top layer 1106 Mask material 1112 Groove 1202 Si substrate 1204 Mask material 1208 Top layer part 1210 Groove 1301 1302 Axis oriented polycrystal Thin film forming equipment

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location C30B 23/04 H01L 21/20 8418-4M

Claims (45)

[Claims] 1. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a sacrificial layer on the base material;
(b) a step of forming a layer of a predetermined substance constituting the member on the sacrificial layer, and (c) an appropriate temperature below the crystallization temperature of the predetermined substance during or after the step (b). At a certain temperature, a beam of low energy gas that does not cause sputtering of the predetermined substance is directed from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed, from the predetermined substance. By irradiating the layer, the step of converting the layer of the predetermined substance into a single crystal layer, (d) after the step (c), the step of removing the sacrificial layer, a method of manufacturing a micromachine . 2. A method for manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) a layer of a first substance for preventing the progress of etching on the surface of the base material. And (b) forming a layer of a second substance constituting the member on the layer of the first substance, (c) during or after the step (b), Do not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Converting the layer of the second substance into a single crystal layer by irradiating the layer of the second substance with a beam of low energy gas; and (d) after the step (b), Etch the substrate from the back side of the substrate until the layer of the first material is exposed. A method of manufacturing a micromachine, comprising the steps of selectively performing. 3. The method according to claim 2, wherein the first substance is an electrical insulator and the second substance is a semiconductor. 4. The manufacturing method according to claim 2, wherein the second substance is a semiconductor, and (e) the impurity is selectively introduced into a single crystal layer of the second substance. 2. A method of manufacturing a micromachine, further comprising the step of incorporating a strain sensor in the single crystal layer of the substance of 2. 5. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a sacrificial layer on the base material;
(b) selectively removing a specific portion of the sacrificial layer,
(c) a step of forming a layer of a predetermined substance forming the member on the sacrificial layer and on the base material corresponding to the specific portion, and (d) in the step (c) or After that, at a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, sputtering of the predetermined substance is caused from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed. By irradiating the layer of the predetermined substance with a beam of low-energy gas that is not present, converting the layer of the predetermined substance into a single crystal layer, and (e) after the step (d), And a step of removing the sacrificial layer. 6. The manufacturing method according to claim 5, wherein (f)
Prior to the step (e), further comprising a step of selectively forming an opening in the predetermined material layer, the step (e), (e-1) after the step (f), And a step of removing the sacrificial layer by etching through the opening. 7. A method of manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a first sacrificial layer on the base material; b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b), at a temperature below the crystallization temperature of the first material. At a temperature, a beam of low-energy gas that does not cause sputtering of the first substance is directed from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, By irradiating the layer of the first substance to a single crystal layer, (d) selectively removing the layer of the first substance, and (e) the process ( After d), a second layer is formed on the layer of the first material which remains unremoved and on the first sacrificial layer. A step of forming a sacrificial layer, and (f) selecting a specific portion of the first and second sacrificial layers, leaving a region left at least in the step (d) where the first material layer is not removed. The step of removing the
(g) forming a layer of a second substance constituting the member on the second sacrificial layer and on the base material corresponding to the specific portion; and (h) the step (g ), Or at a proper temperature below the crystallization temperature of the second substance, from the direction perpendicular to the plurality of close-packed crystal planes having different directions in the single crystal layer to be formed, Irradiating the layer of the second substance with a beam of low-energy gas that does not cause sputtering of the substance of (2), converting the layer of the second substance into a single crystal layer; (h)
And a step of removing the first and second sacrificial layers after the step of manufacturing the micromachine. 8. A method of manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a recessed portion on the upper surface of the base material;
(b) a step of filling the concave portion with a sacrificial layer, (c) a predetermined substance constituting the member on the sacrificial layer and on the base material corresponding to the peripheral portion of the concave portion. And (d) during or after the step (c), at a proper temperature not higher than the crystallization temperature of the predetermined substance, a plurality of different directions in the single crystal layer to be formed are formed. Irradiating the layer of the predetermined substance with a beam of low energy gas that does not cause the sputtering of the predetermined substance from a direction perpendicular to the densest crystal plane of the single crystal layer. And a step of removing the sacrificial layer after the step (d), the method for manufacturing a micromachine. 9. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a recessed portion on the upper surface of the base material;
(b) filling the recessed portion with a sacrificial layer, and (c) depositing the first material of the insulator on the sacrificial layer and on the base material corresponding to the peripheral portion of the recessed portion. Forming a layer,
(d) forming a semiconductor second material layer on the first material layer, the semiconductor second material layer being a main component of the member;
(e) During or after the step (d), perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal layer to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Irradiating the layer of the second substance with a beam of low energy gas that does not cause the sputtering of the second substance from a different direction, thereby converting the layer of the second substance into a single crystal layer. And (f) a step of removing the sacrificial layer after the step (e), the method for manufacturing a micromachine. 10. The manufacturing method according to claim 8, wherein the predetermined substance is a semiconductor, and (f) the predetermined substance is selectively introduced into a single crystal layer of the predetermined substance. The method for manufacturing a micromachine, further comprising the step of incorporating a strain sensor in the single crystal layer. 11. A manufacturing method comprising the step of etching a base material, the method comprising: (a) forming a layer of a predetermined substance on the base material; and (b) in the step (a). Or later,
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
By irradiating the layer of the predetermined substance, the step of converting the layer of the predetermined substance into a single crystal layer having a predetermined crystal orientation with high resistance to the etching, (c) the step (b) After that, the step of selectively etching the base material from the back side of the base material until the layer of the predetermined substance is exposed is provided. 12. The manufacturing method according to claim 11, wherein
The substrate has a single crystal structure, the predetermined substance is the same substance as the substrate, and (d) after the step (c), an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Below, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed, a low-energy gas beam that does not cause sputtering of the predetermined substance is supplied to the predetermined substance. A method of manufacturing a micromachine, further comprising the step of irradiating the layer with a single crystal layer of the predetermined substance into a new single crystal layer having the same crystal orientation as the base material. 13. A method of manufacturing a micromachine, comprising the step of etching a base material, the method comprising: (a) forming a mask material on an upper surface of the base material; and (b) selectively removing the mask material. And (c) after the step (b), the phase of the direction in the single crystal layer to be formed at an appropriate temperature lower than the crystallization temperature of the predetermined substance forming the upper surface portion of the base material. By irradiating the upper surface of the predetermined substance with a beam of a low-energy gas that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of different densest crystal planes, the upper surface portion of the predetermined substance is A step of selectively converting to a single crystal layer having a predetermined crystal orientation with high resistance to etching, (d) a step of removing the mask material after the step (c), and (e) the Process (d)
After that, the step of selectively removing the portion of the base material not covered with the single crystal layer by performing the etching on the base material from the upper surface of the base material is performed. 14. The manufacturing method according to claim 13,
Before the step (c), the predetermined substance forming the upper surface portion of the base material has a single crystal structure, and (f) after the step (e), the predetermined substance having a crystallization temperature of A beam of low energy gas that does not cause sputtering of the predetermined substance is emitted from the direction perpendicular to a plurality of close-packed crystal planes having different directions in a newly formed single crystal layer at an appropriate temperature. By irradiating the layer of the substance of step (c) with the single crystal layer of the predetermined substance of interest.
A method of manufacturing a micromachine, further comprising a step of converting into a new single crystal layer having the same crystal orientation as the previous crystal orientation. 15. The manufacturing method according to claim 1, wherein the atomic weight of the element forming the gas is lower than the maximum atomic weight of the element forming the irradiation target material. Micromachine manufacturing method. 16. A method of manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a sacrificial layer on the base material;
(b) a step of forming a layer of a predetermined substance constituting the member on the sacrificial layer, and (c) an appropriate temperature below the crystallization temperature of the predetermined substance during or after the step (b). By irradiating the layer of the predetermined substance with a beam of a low energy gas that does not cause the sputtering of the predetermined substance from one direction at a different temperature, the layer of the predetermined substance becomes an axially oriented polycrystalline layer. A method of manufacturing a micromachine, comprising: a step of converting; and (d) a step of removing the sacrificial layer after the step (c). 17. The manufacturing method according to claim 16, wherein after the step (c) and before the step (d), (e)
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
A method of manufacturing a micromachine, further comprising the step of converting an axially oriented polycrystalline layer of the predetermined substance into a single crystal layer by irradiating the layer of the predetermined substance. 18. A method of manufacturing a micromachine comprising a member having a structure at least a part of which is separated from a base material, comprising: (a) a layer of a first substance that prevents the progress of etching on the surface of the base material. And (b) forming a layer of a second substance constituting the member on the layer of the first substance, (c) during or after the step (b), By irradiating the layer of the second substance with a beam of a low energy gas that does not cause sputtering of the second substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Converting the second material layer into an axially oriented polycrystalline layer, and (d) after the step (b), until the first material layer is exposed from the back side of the substrate. And a step of selectively etching the base material. 19. The manufacturing method according to claim 18, wherein after the step (c), (e) a single crystal to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Irradiating the layer of the second substance with a beam of a low-energy gas that does not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the layer, A method of manufacturing a micromachine, further comprising a step of converting an axially oriented polycrystalline layer of a second substance into a single crystal layer. 20. The manufacturing method according to claim 18, wherein the first substance is an electrical insulator, and the second substance is a semiconductor. 21. The manufacturing method according to claim 18, wherein the second substance is a semiconductor, and (f) the axially oriented polycrystalline layer or the single crystal layer of the second substance is selectively formed. A step of incorporating a strain sensor into the axially oriented polycrystalline layer or single crystalline layer of the second substance by introducing impurities,
A method for manufacturing a micromachine further comprising: 22. A method of manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a sacrificial layer on the base material;
(b) selectively removing a specific portion of the sacrificial layer,
(c) a step of forming a layer of a predetermined substance forming the member on the sacrificial layer and on the base material corresponding to the specific portion, and (d) in the step (c) or After that, by irradiating the layer of the predetermined substance with a beam of a low energy gas that does not cause the sputtering of the predetermined substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. A method for manufacturing a micromachine, comprising: converting a layer of the predetermined material into an axially oriented polycrystalline layer; and (e) removing the sacrificial layer after the step (d). 23. The manufacturing method according to claim 22, wherein after the step (d) and before the step (e), (f)
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
A method of manufacturing a micromachine, further comprising the step of converting an axially oriented polycrystalline layer of the predetermined substance into a single crystal layer by irradiating the layer of the predetermined substance. 24. The manufacturing method according to claim 22, further comprising: (g) prior to the step (e), a step of selectively forming an opening in the predetermined material layer, The method of manufacturing a micromachine, wherein the step (e) includes (e-1), after the step (g), the sacrificial layer is removed by performing etching through the opening. 25. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a first sacrificial layer on the base material; b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b), at a temperature below the crystallization temperature of the first material. By irradiating the layer of the first substance with a beam of low energy gas that does not cause the sputtering of the first substance from one direction at a temperature, the layer of the first substance is axially oriented polycrystal. A step of converting into a layer, (d) a step of selectively removing the layer of the first substance, and (e) a layer of the first substance that remains unremoved after the step (d). Forming a second sacrificial layer on the first sacrificial layer and (f) at least in the step (d). Selectively removing a specific portion of the first and second sacrificial layers, leaving a region where the first material layer is not removed, and (g) the second
Forming a layer of a second substance constituting the member on the sacrificial layer and on the base material corresponding to the specific portion; and (h) in or after the step (g). , Causing sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. Irradiating the layer of the second substance with a non-low energy gas beam to convert the layer of the second substance to a single crystal layer, and (i) after the step (h) And a step of removing the first and second sacrificial layers, the method for manufacturing a micromachine. 26. The manufacturing method according to claim 25, wherein after the step (c), (j) a single crystal to be formed at an appropriate temperature equal to or lower than the crystallization temperature of the first substance. Irradiating the layer of the first substance with a beam of a low-energy gas that does not cause sputtering of the first substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the layer, A method of manufacturing a micromachine, further comprising a step of converting an axially oriented polycrystalline layer of a first substance into a single crystal layer. 27. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a first sacrificial layer on the base material; b) forming a layer of a first material on the first sacrificial layer, and (c) during or after the step (b), at a temperature below the crystallization temperature of the first material. At a temperature, a beam of low-energy gas that does not cause sputtering of the first substance is directed from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, By irradiating the layer of the first substance to a single crystal layer, (d) selectively removing the layer of the first substance, and (e) the process ( After d), a second layer is formed on the layer of the first material which remains unremoved and on the first sacrificial layer. A step of forming a sacrificial layer, and (f) selecting a specific portion of the first and second sacrificial layers, leaving a region left at least in the step (d) without removing the first material layer. The step of removing the
(g) forming a layer of a second substance constituting the member on the second sacrificial layer and on the base material corresponding to the specific portion; and (h) the step (g ) Inside or after, at a proper temperature below the crystallization temperature of the second substance, a beam of low energy gas that does not cause sputtering of the second substance from one direction is applied to the second substance. Converting the layer of the second material into an axially oriented polycrystalline layer by irradiating the layer of (1), and (i) removing the first and second sacrificial layers after the step (h). A method of manufacturing a micromachine, comprising: 28. The manufacturing method according to claim 27, wherein after the step (h) and before the step (i), (j)
Do not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. A beam of low energy gas,
A method of manufacturing a micromachine, further comprising the step of converting the axially oriented polycrystalline layer of the second substance into a single crystal layer by irradiating the layer of the second substance. 29. A method of manufacturing a micromachine comprising a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a recess on the upper surface of the base material; Filling the concave portion with a sacrificial layer, and (c) forming a layer of a predetermined substance constituting the member on the sacrificial layer and on the base material corresponding to the peripheral portion of the concave portion. And (d) during or after the step (c), at a proper temperature below the crystallization temperature of the predetermined substance, a low energy gas that does not cause sputtering of the predetermined substance from one direction. The step of converting the layer of the predetermined substance into an axially oriented polycrystalline layer by irradiating the layer of the predetermined substance with the beam of, and (e) after the step (d), the sacrificial layer is formed. A method of manufacturing a micromachine, comprising: a step of removing. 30. The manufacturing method according to claim 29, wherein after the step (d) and before the step (e), (f)
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
A method of manufacturing a micromachine, further comprising the step of converting an axially oriented polycrystalline layer of the predetermined substance into a single crystal layer by irradiating the layer of the predetermined substance. 31. The manufacturing method according to claim 29 or 30, wherein the predetermined substance is a semiconductor, and (g) the single crystal layer or the axially oriented polycrystalline layer of the predetermined substance is selectively doped with impurities. The method for manufacturing a micromachine, further comprising the step of incorporating a strain sensor into the single crystal layer or the axially oriented polycrystalline layer of the predetermined substance by introducing the above. 32. A method of manufacturing a micromachine including a member having a structure, at least a part of which is separated from a base material, comprising: (a) forming a recessed portion on an upper surface of the base material; Filling the recess with a sacrificial layer, and (c) forming a layer of a first material of an insulator on the sacrificial layer and on the substrate corresponding to the peripheral portion of the recess. A step of: (d) forming a second material layer of a semiconductor, which is a main component of the member, on the first material layer; and (e) of the step (d). Alternatively, a beam of low energy gas that does not cause sputtering of the second substance from one direction is applied to the layer of the second substance at a proper temperature below the crystallization temperature of the second substance. Irradiating to convert the layer of the second substance into an axially oriented polycrystalline layer, and (f) the step (e) In method of manufacturing a micromachine comprising a step of removing the sacrificial layer. 33. The manufacturing method according to claim 32, wherein after the step (e) and before the step (f), (g)
Do not cause sputtering of the second substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, at an appropriate temperature equal to or lower than the crystallization temperature of the second substance. A beam of low energy gas,
A method of manufacturing a micromachine, further comprising the step of converting the axially oriented polycrystalline layer of the second substance into a single crystal layer by irradiating the layer of the second substance. 34. A manufacturing method comprising a step of etching a base material, the method comprising: (a) forming a layer of a predetermined substance on the base material; and (b) in the step (a). Or later,
By irradiating the layer of the predetermined substance with a beam of low-energy gas that does not cause sputtering of the predetermined substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance, A step of converting the layer of the substance of claim 1 into an axially oriented polycrystalline layer having a predetermined crystal orientation with high resistance to etching, and (c) after the step (b), the predetermined side from the back side of the substrate. Selectively etching the substrate until the layer of material is exposed. 35. The manufacturing method according to claim 34,
The substrate has a single crystal structure, the predetermined substance is the same substance as the substrate, and (d) after the step (c), an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Below, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed, a low-energy gas beam that does not cause sputtering of the predetermined substance is supplied to the predetermined substance. The method for manufacturing a micromachine, further comprising the step of converting the axially oriented polycrystalline layer of the predetermined substance into a single crystal layer having the same crystal orientation as the base material by irradiating the layer. 36. A method for manufacturing, comprising: a step of etching a base material; (a) forming a layer of a predetermined substance on the base material; and (b) in the step (a). Or later,
By irradiating the layer of the predetermined substance with a beam of low-energy gas that does not cause sputtering of the predetermined substance from one direction at an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance, A step of converting the layer of the substance of to the axially oriented polycrystalline layer, and (c) after the step (b),
Low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed under an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. The gas beam of
By irradiating the layer of the predetermined substance, the axially oriented polycrystalline layer of the predetermined substance is converted into a single crystal layer having a predetermined crystal orientation with high resistance to etching, and (d) the step After (c), the step of selectively etching the base material from the back side of the base material until the layer of the predetermined substance is exposed, is provided. 37. The manufacturing method according to claim 36,
The base material has a single crystal structure, the predetermined substance is the same substance as the base material, and (e) after the step (d), an appropriate temperature equal to or lower than the crystallization temperature of the predetermined substance. Below, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be newly formed, a low-energy gas beam that does not cause sputtering of the predetermined substance is supplied to the predetermined substance. A method of manufacturing a micromachine, further comprising the step of irradiating the layer with a single crystal layer of the predetermined substance into a new single crystal layer having the same crystal orientation as the base material. 38. A manufacturing method comprising a step of etching a base material, the method comprising: (a) forming a mask material on the upper surface of the base material; and (b) selectively removing the mask material. And (c) after the step (b), at a proper temperature equal to or lower than the crystallization temperature of the predetermined substance forming the upper surface portion of the substrate, the sputtering of the predetermined substance is not caused from one direction. By irradiating the upper surface of the predetermined substance with a beam of low-energy gas, the upper surface portion of the predetermined substance is selectively formed into an axially oriented polycrystalline layer having a predetermined crystal orientation with high resistance to the etching. A step of converting, (d) after the step (c), a step of removing the mask material, and (e) after the step (d), the etching from the upper surface of the base material to the base material. The portion of the base material that is not covered with the single crystal layer by applying Method of manufacturing a micromachine comprising a step of selectively removing the. 39. The manufacturing method according to claim 38,
Before the step (c), the predetermined substance forming the upper surface portion of the substrate has a single crystal structure, and (f) after the step (e), the predetermined substance having a crystallization temperature of not more than A beam of low energy gas that does not cause sputtering of the predetermined substance is emitted from the direction perpendicular to a plurality of close-packed crystal planes having different directions in a newly formed single crystal layer at an appropriate temperature. By irradiating the layer of the substance of (1) with the axially oriented polycrystalline layer of the predetermined substance to a single crystal layer having the same crystal orientation as the crystal orientation before the step (c), Manufacturing method. 40. The manufacturing method according to claim 38,
Before the step (c), the predetermined substance constituting the upper surface portion of the substrate has an axially oriented polycrystalline structure, (f)
After the step (e), at a proper temperature not higher than the crystallization temperature of the predetermined substance, from the direction perpendicular to the densest crystal plane in the axially oriented polycrystalline layer to be newly formed, the predetermined substance By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause sputtering, the axially oriented polycrystalline layer of the predetermined substance is treated in the step (c).
A method of manufacturing a micromachine, further comprising a step of converting into a new axially oriented polycrystalline layer having the same crystal orientation as the previous crystal orientation. 41. The manufacturing method according to claim 13, wherein
Before the step (c), the predetermined substance constituting the upper surface portion of the substrate has an axially oriented polycrystalline structure, (f)
After the step (e), at a proper temperature not higher than the crystallization temperature of the predetermined substance, from the direction perpendicular to the densest crystal plane in the axially oriented polycrystalline layer to be newly formed, the predetermined substance By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause sputtering, the axially oriented polycrystalline layer of the predetermined substance is treated in the step (c).
A method of manufacturing a micromachine, further comprising a step of converting into a new axially oriented polycrystalline layer having the same crystal orientation as the previous crystal orientation. 42. A manufacturing method comprising a step of etching a base material, the method comprising: (a) forming a mask material on an upper surface of the base material; and (b) selectively removing the mask material. And (c) after the step (b), at a proper temperature equal to or lower than the crystallization temperature of the predetermined substance forming the upper surface portion of the substrate, the sputtering of the predetermined substance is not caused from one direction. By irradiating the upper surface of the predetermined substance with a beam of low-energy gas, the step of selectively converting the upper surface portion of the predetermined substance into an axially oriented polycrystalline layer,
(d) After the step (c), under a proper temperature equal to or lower than the crystallization temperature of the predetermined substance, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in a single crystal layer to be formed, By irradiating the layer of the predetermined substance with a low-energy gas beam that does not cause the sputtering of the predetermined substance, the axially oriented polycrystalline layer of the predetermined substance is formed into a predetermined crystal having high resistance to the etching. A step of converting to a single crystal layer having an orientation, (e) a step of removing the mask material after the step (d), and (f) the step (e)
After that, the step of selectively removing the portion of the base material not covered with the single crystal layer by performing the etching on the base material from the upper surface of the base material is performed. 43. The manufacturing method according to claim 42,
Before the step (c), the predetermined substance forming the upper surface portion of the substrate has a single crystal structure, and (g) after the step (f), the crystallization temperature of the predetermined substance is equal to or lower than the crystallization temperature. A beam of low energy gas that does not cause sputtering of the predetermined substance is emitted from the direction perpendicular to a plurality of close-packed crystal planes having different directions in a newly formed single crystal layer at an appropriate temperature. By irradiating the layer of the substance of step (c) with the single crystal layer of the predetermined substance of interest.
A method of manufacturing a micromachine, further comprising a step of converting into a new single crystal layer having the same crystal orientation as the previous crystal orientation. 44. The manufacturing method according to claim 16, wherein the atomic weight of the element forming the gas is lower than the maximum atomic weight of the elements forming the irradiation target material. Micromachine manufacturing method. 45. Claims 17, 19, 23, 26, 2
48. The manufacturing method according to any one of 8, 30, 33, 36, or 42, wherein the irradiation direction of the gas beam at the time of forming the axially oriented polycrystalline thin film and the axially oriented polycrystalline thin film A method for manufacturing a micromachine, wherein one of a plurality of irradiation directions of the gas beam at the time of conversion into a crystalline thin film is the same as each other.