JPH0723900Y2 - Ion processing device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is an apparatus such as an ion implantation apparatus in which ion beams can be irradiated even on the side wall of a recess provided on the surface of a wafer. The present invention relates to a processing apparatus, and more particularly, to improvement of backlash adjusting means for a bevel gear in a mechanism for rotating the wafer.

[Background technology]

In recent years, along with the miniaturization of semiconductor devices, it is possible to perform ion implantation by irradiating an ion beam not only on the bottom surface of a recess such as a hole or groove carved in the surface of a wafer but also on the side wall (side surface) thereof. There is an increasing demand for a device that can be used, and a device that can meet the demand has been separately proposed by the same applicant.

This will be described with reference to FIG. 3. An ion beam 4 from an ion source (not shown) or the like is introduced in the front side direction from the back side of the paper, for example, into a vacuum container 6 that is evacuated by a vacuum exhaust device (not shown). .

A hollow holder main shaft 20 is rotatably passed through the side wall of the vacuum container 6 via a rotary feedthrough 18 for vacuum sealing. Center line 20a of this holder spindle 20
Is held by a holder 8 described later (that is, the clamper 8b
It passes through the center point 2a of the surface of the wafer 2 (which is sandwiched between the two).

Inside the vacuum container 6 of the holder main shaft 20, there is attached a holder support arm 22 that is hollow and has a hollow cylindrical shape bent in a crank shape, and on the outside of the vacuum container 6, gears 16, which mesh with each other, A reversible holder tilt motor 12 (holder tilt drive source) is connected via 14 and a holder rotation motor 32 (holder rotation drive source) is supported. Both motors 12 and 32 are step motors, for example.

By rotating the holder tilt motor 12 as indicated by arrow J, the holder main shaft 20 can be rotated as indicated by arrow K together with the holder rotation motor 32, etc., and thereby the holder attached to the tip of the holder support arm 22. 8 and the wafer 2 can be fixed by rotating (tilting) between the horizontal state (implantation angle 90 degrees) and the vertical state (implantation angle 0 degrees) as shown.

A rotary shaft 35, one end of which is connected to a holder rotation motor 32, is rotatably passed through the holder main shaft 20, and the tip end of the holder support arm 22 is held by a rotary feedthrough 39 for vacuum sealing. A rotary shaft 38 is rotatably supported. The rotary movement of the rotary shaft 35, for example, as shown by the arrow F, is transmitted by the rotation transmitting mechanism, that is, the holder supporting arm 22.
The holder 8 is transmitted to the holder rotating shaft 38 via the rotating shafts 36 and 37 rotatably supported by bearings 45 to 48 and three sets of bevel gears 40 to 42, and the holder 8 attached to the holder rotating shaft 38 is indicated by an arrow G, for example. Rotate to.

A holder base 8a that constitutes the holder 8 that holds the wafer 2 is attached to the tip of the holder rotation shaft 38.
A ring-shaped clamper 8b, which also constitutes the holder 8 and presses the peripheral portion of the wafer 2, is provided on the upper portion thereof. This clamper 8b is moved up and down by a mechanism (not shown).

The wafer 8 is attached to and detached from (removed from) the holder 8 by carrying means (not shown) such as a carrying belt.

According to the above configuration, the wafer 2 held by the holder 8 can be processed in various modes, for example, in the following four modes, for example, by ion implantation, and the surface of the wafer 2 can be processed in any of the modes. Ions can be implanted not only on the bottom surface of the provided hole or groove, but also on the side wall.

Rotation Implant Mode The holder support arm 22 is rotated by the holder tilt motor 12 to bring the holder upright and the implantation angle of the ion beam 4 into the wafer 2 is set to a desired angle. In that case, since the center line 20a of the holder spindle 20 passes through the center point 2a on the surface of the wafer 2 on the holder 8 as described above, the center of the ion beam 4 coincides with the center of the wafer 2. In this case, the centers of the two do not shift even if the implantation angle is changed variously. Then, while the holder 8 and the wafer 2 are rotated (rotated) by the holder rotation motor 32, the wafer 2 is irradiated with the ion beam 4 to perform processing such as ion implantation.

Oscillation injection mode The holder tilt motor 12 causes the holder 8 and the wafer 2 to move.
Are ion-implanted while reciprocating between predetermined implantation angles. In that case, the holder 8 and the wafer 2 are not rotated.

 Rotational rocking injection mode In this case, the above modes and are simultaneously performed.

Step rotation implantation mode This is a modification of the above mode, in which the holder 8 and the wafer 2 are continuously rotated by a predetermined angle, and ions are implanted into the wafer 2 while the rotation is stopped. However, in this case, the wafer 2 whose orientation flat is aligned in the predetermined direction in advance is supplied to the holder 8, and the angle of intermittent rotation of the wafer 2 is set to a certain value with respect to the orientation flat.

[Purpose of device]

In the above apparatus, particularly when the above step rotation injection mode is adopted, three sets of bevel gears are provided in order to accurately position the rotation of the holder 8 and the rotation of the wafer 2.
It is necessary to reduce the backlash of 40 to 42, and thus, until now, the thickness of spacers 50 to 52 to be inserted between some bevel gears and the bearings adjacent to the bevel gear has to be reduced when the device is assembled. It was processed and adjusted according to the actual product so that it would be the smallest.

Therefore, there is still room for improvement in that the backlash adjustment is troublesome.

Therefore, the main object of the present invention is to provide an ion processing apparatus in which such a point is further improved.

[Means for achieving the purpose]

The ion treatment device of the present invention includes bearings for rotating shafts having bevel gears attached to both ends as described above,
A set of adjusting cylinders rotatably and slidably housed in a holder supporting arm, which are screwed with each other by screw parts provided on one inner peripheral surface and the other outer peripheral surface, respectively. The readjustment cylinder has a plurality of small holes on the outer peripheral surface in the vicinity of the seam, and the holder support arm has a slotted shape so that a plurality of the small holes of the readjustment cylinder can be seen. Adjustment holes are provided on both left and right sides of this adjustment hole, and set screws for fixing the readjustment cylinder to the holder support arm are provided respectively. Is provided.

[Action]

Since the set of adjustment tubes are screwed together by their threaded portions, when they are mutually rotated, they slide in the holder support arm to expand and contract. As a result, the distance between the two bearings supported by it also expands and contracts, which facilitates backlash adjustment of the bevel gear.

〔Example〕

FIG. 1 is a vertical cross-sectional view partially showing an ion treatment apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view showing the adjustment hole portion of FIG. The same or corresponding parts as those in the example of FIG. 3 are designated by the same reference numerals, and the differences from the preceding example will be mainly described below.

In this embodiment, a set of bearings 47 and 48 that pivotally support the rotating shaft 37 as described above is housed in the holder support arm 22 having a hollow cylindrical portion so as to be rotatable and slidable in the axial direction thereof. These are supported by adjusting cylinders 56 and 57, respectively. Similarly, bearings 45 and 46 that support the rotary shaft 36
Are supported by a pair of adjusting cylinders 54 and 55, respectively.

In this example, the structure around the adjusting tubes 54, 55 and the adjusting tube 56,
Since the structure around 57 is the same as each other, here the adjustment tube
The 56 and 57 sides will be mainly explained.

On the outer peripheral surface on one end side of the adjusting cylinder 56, the male screw portion 60 is
Female threaded portions 62 are provided on the inner peripheral surfaces of the ends corresponding to the respective ones, so that both adjusting cylinders 56 and 57 are screwed together.

Further, a plurality of small holes 64, 66 are provided on the outer peripheral surfaces near the joints of the readjustment tubes 56, 57, respectively, and the holder support arm 22 has a plurality of small holes 64, 66, respectively. An elongated hole-shaped adjustment hole 68 is provided so as to appear. Set screws 70 and 72 for fixing the adjustment tubes 56 and 57 to the holder support arm 22 are provided on both left and right sides of the adjustment hole 68. In addition, the adjustment hole 68 and the set screws on the left and right sides
A lid 24 is provided to cover and close the upper portions of 70 and 72.

An example of the procedure for adjusting the backlash in each bevel gear 40 to 42 will be described. First, the lid 74 is removed, the set screw 72 is loosened, and an adjusting rod 57 is inserted into the small hole 66 to insert an adjusting rod 57.
When is rotated, the adjustment cylinder 57 slides in the holder support arm 22 in the axial direction of the rotation shaft 37 as indicated by an arrow Q according to the rotation direction thereof, and the bearing 48 also slides accordingly. As a result, the position of the bevel gear 42a is set to the rotary shaft 37
Can be slid in the axial direction to adjust the engagement with the bevel gear 42b to reduce backlash between them (of course, in that case, a stopper for fixing the bevel gear 42a to the rotating shaft 37). Loosen the screw 78. The same applies to the set screw 76 on the bevel gear 41b side described later.) After the adjustment, the setscrew 72 is tightened to fix the adjustment cylinder 57.

Next, loosen the setscrew 70 side, insert an adjustment rod-like object into the small hole 64, and rotate the adjustment cylinder 56.
56 also slides in the direction of arrow P according to the direction of rotation. After that, it is the same as the above, and as a result, bevel gears
It can be adjusted to reduce backlash between 41a and 41b. After adjustment, tighten the setscrew 70 and attach the lid 74.

The adjustment cylinders 55 and 54 are also the same, and the bevel gear 41
Backlash adjustment between a and 41b and backlash adjustment between bevel gears 40a and 40b can be performed, respectively.

Backlash adjustment at any of the above positions is much easier than in the case where the thickness of the spacer is processed and adjusted as in the prior art.

The procedure for backlash adjustment is not necessarily limited to the above example.

[Effect of device]

As described above, according to the present invention, since the holder support arm, the holder main shaft, the holder tilt drive source, the holder rotation drive source, and the rotation transmission mechanism are provided, the holder tilt angle can be changed in the vacuum container. In addition, the holder can be rotated, and as a result, the ion beam irradiation can be performed not only on the bottom surface of the recess such as the hole or groove provided on the surface of the wafer but also on the side wall by the combination of the inclination and the rotation. .

In addition, the above-mentioned adjustment cylinder is provided in the holder support arm, and a bearing such as an adjustment rod is inserted into the small hole provided on the outer peripheral surface of the adjustment cylinder to rotate it, thereby rotating the bearing of the rotation transmission mechanism. The backlash of the bevel gear can be easily adjusted by sliding it in the axial direction. As a result, the positioning accuracy of the holder and the wafer held thereby in the rotation direction can be improved, and the processing accuracy of the wafer can be improved.

Further, since the backlash adjusting means is a very simple one in which the adjusting cylinder supporting the bearing is slid in the axial direction of the rotary shaft, the holder supporting arm does not have to be made too large.

Also, while accommodating the adjustment tube in the holder support arm,
Since the lid is provided on the adjustment hole and the upper part of the set screw to close it, the sliding part and the screw part are not exposed in the vacuum container, and therefore particles (dust) generated from the sliding part and the screw part.
Can be prevented from scattering in the vacuum container and adhering to the surface of the wafer.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view partially showing an ion treatment apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing a portion of the adjustment hole in FIG. FIG. 3 is a longitudinal sectional view partially showing an example of the ion processing apparatus which is the background of the present invention. 2 ... Wafer, 4 ... Ion beam, 6 ... Vacuum container,
8 …… Holder, 12 …… Holder tilt motor, 20 …… Holder spindle, 22 …… Holder support arm, 32 …… Holder rotation motor, 35〜38 …… Rotary shaft, 40〜42 …… Bevel gear, 45〜 48 ……
Bearings, 54-57 …… Adjustment tubes, 64,66 …… Small holes, 68…
… Adjustment holes, 70,72 …… Set screws, 74 …… Lid.

Claims (1)

[Scope of utility model registration request] 1. An apparatus for irradiating a wafer with an ion beam in a vacuum container to process the wafer, the holder being housed in the vacuum container and capable of holding the wafer, and a hollow cavity for supporting the holder. A holder supporting arm having a cylindrical portion,
A holder spindle that penetrates the vacuum vessel, the center line of which passes substantially through the center point of the wafer surface on the holder, and a holder support arm is attached to the inside of the vacuum vessel. It is connected to a reversible holder tilt drive source that rotates the holder, a holder rotation drive source that is supported on the outside of the vacuum container of the holder main shaft to rotate the holder, and is housed in the holder support arm. A rotation transmission mechanism that transmits a rotational movement from a holder rotation drive source to a holder to rotate the holder, and one or more rotation shafts having bevel gears attached to both ends and each of the rotation shafts supported at two locations. In a device having a bearing, a set of adjusting cylinders in which the bearings for the rotating shafts are housed in a holder support arm in a rotatable and slidable manner. And each of them is supported by one screwed with a screw portion provided on one inner peripheral surface and the other outer peripheral surface, respectively, and a plurality of outer peripheral surfaces near the joint of the readjustment cylinder are provided. Small holes are provided respectively, and long adjustment holes are provided on the holder support arm so that a plurality of the above small holes of the readjustment cylinder will appear respectively. An ion processing apparatus comprising: a set screw that is fixed to a holder support arm, and a lid that covers and covers the adjustment holes and the upper portions of the set screws on the left and right sides of the adjustment hole.