JPH07235803A - Coaxial high power low pass filter - Google Patents
Coaxial high power low pass filterInfo
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- JPH07235803A JPH07235803A JP2765694A JP2765694A JPH07235803A JP H07235803 A JPH07235803 A JP H07235803A JP 2765694 A JP2765694 A JP 2765694A JP 2765694 A JP2765694 A JP 2765694A JP H07235803 A JPH07235803 A JP H07235803A
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- Prior art keywords
- coaxial
- low
- pass filter
- conductor
- line
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、マイクロ波通信装置に
関し、特にマイクロ波通信装置に於ける最終段高出力増
幅器の出力側に設置される高周波除去用低域フィルタに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave communication device, and more particularly to a low frequency filter for high frequency elimination installed on the output side of a final stage high power amplifier in the microwave communication device.
【０００２】[0002]
【従来の技術】例えは゛、通信衛星に於いては、種々の
ミッションを遂行する為に複数のマイクロ波通信装置が
搭載される。こうしたマイクロ波通信装置は種々の周波
数・電力の信号が共存する中で、比較的低い送信周波数
の機器から出力する高周波成分が、高い受信周波数の機
器に入力し干渉する事がない様に設計されなければな
い。この為、基本波を例えれば２ＧＨｚとすると基本波
の１５倍迄の広帯域（即ち３０ＧＨｚ迄）に於て充分な
阻止量を有する事が出来、且つ１００Ｗピーク程度の基
本波が印加されても、高周波放電する事なく、また熱的
にも安定に動作する高電力用低域フィルタが必要とされ
る。2. Description of the Related Art For example, in a communication satellite, a plurality of microwave communication devices are mounted to carry out various missions. Such a microwave communication device is designed so that high frequency components output from a device with a relatively low transmission frequency do not enter and interfere with a device with a high reception frequency in the presence of signals of various frequencies and powers. There is not. Therefore, if the fundamental wave is, for example, 2 GHz, it can have a sufficient blocking amount in a wide band up to 15 times the fundamental wave (that is, up to 30 GHz), and even if a fundamental wave of about 100 W peak is applied, There is a need for a high-power low-pass filter that does not generate high-frequency discharge and that operates stably thermally.
【０００３】従来の同軸型低減フィルタは、図３に示す
様に、太径円柱部１１と細径部１２とを交互に組み合わ
せた同軸内導体１、同軸外導体２、太径円柱部１１と同
軸外導体２との間に配置されたテフロン製の誘電体１３
並びに外部回路との接続を為す５０Ω線路４から構成さ
れていた。図３の従来の同軸型低域フィルタは、技術
書”ＭＩＣＲＯＷＡＶＥ ＦＩＬＴＥＲＳ，ＩＭＰＥＤ
ＡＮＣＥ−ＭＡＴＣＨＩＮＧ ＮＥＴＷＯＲＫＳ，ＡＮ
Ｄ ＣＯＵＰＬＩＮＧ ＳＴＲＵＣＴＵＲＥＳ”Ｇｅｏ
ｒｇｅ Ｌ．Ｍａｔｔｈａｅｌ ｅｔ ａｌ，ＭｃＧＲ
ＡＷ−ＨＩＬＬＢＯＯＫ ＣＯＭＰＡＮＹ，ＰＰ３７１
に記載のものの要部である。この同軸型低域フィルタで
は、太径円柱部１１は同軸外導体２及びその間に配置さ
れた誘電体１３と相俟って低特性インピーダンス部を形
成する。この低特性インピーダンス部が等価的な容量性
素子となる。一方、細径部１２は同軸外導体２と相俟っ
て高インピーダンス部を形成する。この高インピーダン
ス部が等価的な誘導性素子となる。この様にして図３の
回路の等価回路は、容量性素子と誘導性素子とが交互に
接続されている梯子型回路となり、低域フィルタ特性を
具現するものである。各太径円柱部１１の長さ及び各細
径部１２の長さは、与えられた低／高特性インピーダン
ス条件の下で、フィルタの遮断周波数から一義的に決定
される。As shown in FIG. 3, a conventional coaxial type reduction filter has a coaxial inner conductor 1, a coaxial outer conductor 2, and a large diameter cylinder portion 11 in which a large diameter cylinder portion 11 and a small diameter portion 12 are alternately combined. Teflon dielectric 13 disposed between the coaxial outer conductor 2
In addition, it was composed of a 50Ω line 4 for connection with an external circuit. The conventional coaxial low-pass filter shown in FIG. 3 is provided by the technical document "MICROWAVE FILTERS, IMPED.
AANCE-MATCHING NETWORKS, AN
D COUPLING STRUCTURES “Geo
rge L.L. Matthael et al, McGR
AW-HILLBOOK COMPANY, PP371
It is an essential part of the one described in. In this coaxial low-pass filter, the large-diameter cylindrical portion 11 forms a low-characteristic impedance portion together with the coaxial outer conductor 2 and the dielectric 13 arranged between them. This low characteristic impedance part becomes an equivalent capacitive element. On the other hand, the small diameter portion 12 forms a high impedance portion in cooperation with the coaxial outer conductor 2. This high impedance portion becomes an equivalent inductive element. In this way, the equivalent circuit of the circuit of FIG. 3 becomes a ladder type circuit in which capacitive elements and inductive elements are alternately connected, and realizes a low-pass filter characteristic. The length of each large-diameter cylindrical portion 11 and the length of each small-diameter portion 12 are uniquely determined from the cutoff frequency of the filter under given low / high characteristic impedance conditions.
【０００４】[0004]
【発明が解決しようとする課題】この従来の同軸型低域
フィルタでは、図４に示される細径部１２の長さＬLi，
ｉ＝１〜３の各々に於いて、その長さが大体、λ0／２
の整数倍となる周波数（茲でλ0は自由空間波長であ
る）に於いて共振する為に、図５に示される様に、遮断
周波数の約４倍以上の周波数領域では減衰量が確保でき
なくなる。即ち、従来の同軸型低域フィルタを用いたの
では、広範囲に互って減衰量を確保することが不可能で
あるから、同じ通信衛星に搭載される高い周波数を取扱
う他の機器への干渉を防止できなかった。In this conventional coaxial low-pass filter, the length L Li of the small diameter portion 12 shown in FIG.
In each of the i = 1 to 3, the length is approximately, λ 0/2
Since it resonates at a frequency that is an integral multiple of (where λ 0 is the free space wavelength), as shown in FIG. 5, the amount of attenuation can be secured in the frequency range of about 4 times the cutoff frequency or more. Disappear. That is, since it is impossible to secure the attenuation amount over a wide range by using the conventional coaxial low-pass filter, it is possible to interfere with other devices that handle high frequencies mounted on the same communication satellite. Could not be prevented.
【０００５】また、この従来の同軸形低域フィルタに１
００Ｗピーク程度の高電力を印加すると、図６に示され
る様に太径円柱部１１の端縁に於いて電界が集中しマイ
クロ波放電を引き起こしてしまう。更に、一般にマイク
ロ波回路の材料として用いられるテフロン材を誘電体１
３の材料として使用していたが、テフロンは熱抵抗が高
いので、高い熱抵抗の誘電体１３が内、外導体間に介在
する図３の従来構造では、同軸内導体１の温度が外導体
２に比べて著しく高温となり、誘電体１３が熱変形し、
減衰特性が変動することがあった。In addition, the conventional coaxial low-pass filter has
When a high power of about 00 W peak is applied, the electric field is concentrated on the edge of the large-diameter cylindrical portion 11 as shown in FIG. 6, and microwave discharge is caused. Furthermore, a Teflon material generally used as a material for microwave circuits is used as the dielectric 1
Although Teflon has a high thermal resistance, the temperature of the coaxial inner conductor 1 is the same as that of the outer conductor in the conventional structure of FIG. 3 in which the dielectric 13 having a high heat resistance is interposed between the inner and outer conductors. The temperature becomes extremely higher than that of 2, and the dielectric 13 is thermally deformed,
The damping characteristics sometimes fluctuated.
【０００６】このように、従来の同軸形低域フィルタに
は、周波数帯域、通過電力および特性の安定性に関し解
決すべき課題があった。As described above, the conventional coaxial low-pass filter has problems to be solved in terms of frequency band, passing power, and stability of characteristics.
【０００７】[0007]
【課題を解決するための手段】前述の課題を解決するた
めに本発明は次の手段を提供する。In order to solve the above problems, the present invention provides the following means.
【０００８】低特性インピーダンス線路と高特性イン
ピーダンス線路が組み合わされた同軸内導体と、同軸外
導体と、該同軸内導体と該同軸外導体との間に延在して
挿入された円筒直管誘電体とからなり、該同軸外導体は
段差のない同一径の直管とし、該同軸内導体は互いに異
なる遮断周波数を有する２つの同軸低域フィルタ用同軸
内導体を５０Ω線路で直接に接続したものとし、該円筒
直管誘電体が窒化アルミニウムでなることを特徴とする
同軸形高電力低域フィルタ。[0008] A coaxial inner conductor in which a low characteristic impedance line and a high characteristic impedance line are combined, a coaxial outer conductor, and a cylindrical straight pipe dielectric inserted to extend between the coaxial inner conductor and the coaxial outer conductor. The coaxial outer conductor is a straight pipe having the same diameter without a step, and the coaxial inner conductor is formed by directly connecting two coaxial inner conductors for coaxial low-pass filters having different cutoff frequencies with a 50Ω line. And a coaxial high-power low-pass filter in which the cylindrical straight tube dielectric is made of aluminum nitride.
【０００９】遮断周波数ｆ1の同軸低域フィルタＡ
と、遮断周波数ｆ2（ｆ1＜ｆ2）の同軸低域フィルタＢ
と、前記同軸低域フィルタＡ及びＢを直列に接続する５
０Ω同軸線路とでなり、前記同軸低域フィルタＡ及びＢ
並びに前記５０Ω同軸線路は、該５０Ω同軸線路の両端
を前記同軸低域フィルタＡ及びＢの各端で挟んだ形に配
置されているとともに、１つの円筒形導体をそれぞれの
外導体として共用しており、前記円筒形導体の内壁に密
着して該円筒形導体と同軸の円筒形誘電体が設けられて
おり、前記同軸低域フィルタＡ及びＢの内導体は太径円
柱部と細径部とを軸方向に交互に配置してなることを特
徴とする同軸形高電力用低域フィルタ。Coaxial low-pass filter A with cut-off frequency f 1
And a coaxial low-pass filter B with a cutoff frequency f 2 (f 1 <f 2 ).
And the coaxial low-pass filters A and B are connected in series 5
The coaxial low-pass filters A and B are composed of a 0Ω coaxial line.
The 50Ω coaxial line is arranged such that both ends of the 50Ω coaxial line are sandwiched between the ends of the coaxial low-pass filters A and B, and one cylindrical conductor is shared as each outer conductor. And a cylindrical dielectric body coaxial with the cylindrical conductor is provided in close contact with the inner wall of the cylindrical conductor, and the inner conductors of the coaxial low-pass filters A and B have a large diameter cylindrical portion and a small diameter portion. A coaxial high-power low-pass filter characterized by being alternately arranged in the axial direction.
【００１０】前記同軸低域フィルタＡにおける前記太
径円柱部および細径部の軸方向長さは前記同軸低域フィ
ルタＢにおける太径円柱部および細径部の軸方向長さよ
りそれぞれ長いことを特徴とする上記に記載の同軸形
高電力用低域フィルタ。The axial lengths of the large-diameter cylindrical portion and the small-diameter portion of the coaxial low-pass filter A are longer than the axial lengths of the large-diameter cylindrical portion and the small-diameter portion of the coaxial low-pass filter B, respectively. The coaxial high-power low-pass filter described above.
【００１１】[0011]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の２ＧＨｚを送信周波数と
するミションに使用する同軸高電力用低域フィルタの断
面図である。図１に於いて１は同軸内導体であり、２は
同軸外導体、３は同軸内導体１と同軸外導体２との間に
延在する円筒直管誘電体であり、窒化アルミニウム材で
なっている。同軸外導体２は段差をもたない同一径の直
管である。同軸内導体１は、遮断周波数３ＧＨｚの低域
フィルタＡ用内導体と遮断周波数９ＧＨｚの低域フィル
タＢ用内導体とから成っている。低域フィルタＡ及びＢ
は５０Ω線路４にて直接に接続されている。The present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a coaxial high-power low-pass filter used for a mission having a transmission frequency of 2 GHz according to an embodiment of the present invention. In FIG. 1, 1 is a coaxial inner conductor, 2 is a coaxial outer conductor, 3 is a cylindrical straight pipe dielectric extending between the coaxial inner conductor 1 and the coaxial outer conductor 2, and is made of an aluminum nitride material. ing. The coaxial outer conductor 2 is a straight pipe having the same diameter and no step. The coaxial inner conductor 1 is composed of an inner conductor for a low-pass filter A having a cutoff frequency of 3 GHz and an inner conductor for a low-pass filter B having a cutoff frequency of 9 GHz. Low pass filters A and B
Are directly connected by a 50Ω line 4.
【００１２】各低域フィルタ用内導体は、太径円柱部１
１による低特性インピーダンス線路及び細径部１２よる
高特性インピーダンス線路を交互に組み合わせてなり、
容量性素子と誘導性素子との梯子形回路を形成し、各遮
断周波数の低域フィルタを具現している。遮断周波数３
ＧＨｚの低域フィルタＡの減衰量特性は図５に示され
る。この低域フィルタＡの遮断周波数が低域フィルタＢ
の遮断周波数に比べて低い。そこで、低域フィルタＡに
おける太径円柱部１１および細径部１２の長手方向の各
寸法が比較的長い。従って、低域フィルタＡの共振点は
低い所にある。The inner conductor for each low-pass filter has a large-diameter cylindrical portion 1.
The low characteristic impedance line according to 1 and the high characteristic impedance line due to the small diameter portion 12 are alternately combined,
A ladder type circuit of a capacitive element and an inductive element is formed to realize a low pass filter with each cutoff frequency. Cutoff frequency 3
The attenuation characteristic of the low-pass filter A of GHz is shown in FIG. The cutoff frequency of the low-pass filter A is the low-pass filter B.
Lower than the cutoff frequency of. Therefore, each of the large-diameter cylindrical portion 11 and the small-diameter portion 12 in the low-pass filter A has a relatively long dimension in the longitudinal direction. Therefore, the resonance point of the low-pass filter A is low.
【００１３】低域フィルタＡの減衰特性は、図５に示さ
れる様に、１３ＧＨｚ近辺から悪化している。一方、遮
断周波数９ＧＨｚの低域フィルタＢの減衰特性は、図２
に示される。低域フィルタＢの遮断周波数が高いから、
低域フィルタＢの内導体１における太径円柱部１１およ
び細径部１２の長手方向の各寸法が比較的短かい。それ
故、低域フィルタＢにおける共振点は３８ＧＨｚ以上の
所にあり、１３〜３０ＧＨｚの領域で減衰量を確保でき
る。但し３〜１０ＧＨｚの範囲内の減衰量は期待できな
い。この様な減衰特性の低域フィルタＡ及びＢを５０Ω
同軸線路４で直接に接続すると、減衰量はほぼ両フィル
タの和になる。３〜１２ＧＨｚは低域フィルタＡによ
り、１２〜３０ＧＨｚは低域フィルタＢにより減衰量が
それぞれ保証されるので、３〜３０ＧＨｚという非常な
広範囲に互って減衰量を確保できる。尚、２ＧＨｚの基
本波送信周波数に於いて低域フィルタＡ及びＢ共に整合
しているので、図１の実施例により基本波を良好に伝送
する事が可能である。As shown in FIG. 5, the attenuation characteristic of the low-pass filter A deteriorates from around 13 GHz. On the other hand, the attenuation characteristic of the low-pass filter B having a cutoff frequency of 9 GHz is shown in FIG.
Shown in. Since the cutoff frequency of the low-pass filter B is high,
Each of the large-diameter cylindrical portion 11 and the small-diameter portion 12 in the inner conductor 1 of the low-pass filter B has relatively short longitudinal dimensions. Therefore, the resonance point in the low-pass filter B is located at 38 GHz or higher, and the amount of attenuation can be secured in the region of 13 to 30 GHz. However, the amount of attenuation within the range of 3 to 10 GHz cannot be expected. The low-pass filters A and B having such attenuation characteristics are set to 50Ω.
When directly connected by the coaxial line 4, the amount of attenuation is almost the sum of both filters. The attenuation amount of 3 to 12 GHz is guaranteed by the low-pass filter A, and the attenuation amount of 12 to 30 GHz is guaranteed by the low-pass filter B. Therefore, the attenuation amount can be secured in a very wide range of 3 to 30 GHz. Since the low-pass filters A and B are matched at the fundamental wave transmission frequency of 2 GHz, the fundamental wave can be satisfactorily transmitted by the embodiment shown in FIG.
【００１４】１００Ｗピーク程度の高電力を印加する
と、図３の従来例では、図６に示すように、太径円柱部
１１の端縁における電界集中により放電破壊に至った
が、本実施例によれば、図１に示される様に、同軸内導
体１と同軸外導体２との間に、軸方向に延在して円筒直
管誘導電体３が介在しているので太径円柱部１１の端縁
における電界集中はあっても、空間電子は誘電体３に遮
られて同軸外導体２に到達できないので、マイクロ波放
電は起らない。また太径円柱部１１の端縁と同軸外導体
２との間に印加される電圧に対しても窒化アルミニウム
材の誘電体３は、充分な絶縁耐圧を有するので、破壊さ
れない。When a high power of about 100 W peak is applied, in the conventional example of FIG. 3, electric discharge is concentrated on the edge of the large diameter cylindrical portion 11 as shown in FIG. According to this, as shown in FIG. 1, since the cylindrical straight pipe induction body 3 extends in the axial direction between the coaxial inner conductor 1 and the coaxial outer conductor 2, the large-diameter cylindrical portion 11 is provided. Although the electric field is concentrated on the edge of the space, the space electrons are blocked by the dielectric 3 and cannot reach the coaxial outer conductor 2, so that the microwave discharge does not occur. Further, the dielectric 3 made of an aluminum nitride material has a sufficient withstand voltage against a voltage applied between the end of the large-diameter cylindrical portion 11 and the coaxial outer conductor 2, and therefore is not destroyed.
【００１５】同軸内導体１の挿入損失により発生する熱
は、金属アルミニウムに匹敵する良好な熱伝導率を有す
る窒化アルミニウム材で構成された誘電体３を通して熱
伝導にて同軸外導体２、即ちケース側に逃げてしまうの
で、同軸内導体１が高温化して誘電体３等の各部を破壊
することはない。したがって、本実施例の周波数特性
は、使用時間によって変化せず、安定である。The heat generated by the insertion loss of the coaxial inner conductor 1 is conducted by heat conduction through the dielectric 3 made of an aluminum nitride material having a good thermal conductivity comparable to that of metallic aluminum, that is, the case. Since it escapes to the side, the temperature of the coaxial inner conductor 1 does not rise and the parts such as the dielectric 3 are not destroyed. Therefore, the frequency characteristic of the present embodiment is stable and does not change with the use time.
【００１６】尚、説明の便宣上、遮断周波数３ＧＨｚと
９ＧＨｚの低域フィルタＡ，Ｂを組み合わせて説明した
が、他の遮断周波数の低域フィルタの組み合わせでも本
願発明が実施できることは自明である。Incidentally, for convenience of explanation, the description has been made by combining the low-pass filters A and B having the cut-off frequencies of 3 GHz and 9 GHz, but it is obvious that the invention of the present application can be implemented by combining the low-pass filters having other cut-off frequencies. .
【００１７】[0017]
【発明の効果】以上に述べた如く、本発明によれば、非
常に広い周波数帯域に於いて充分な減衰量を確保でき、
しかも高電力印加に耐えられ、さらに特性の安定な低域
フィルタを提供でき、本発明は実用上益する事、甚々大
である。As described above, according to the present invention, a sufficient amount of attenuation can be secured in a very wide frequency band,
Moreover, it is possible to provide a low-pass filter that can withstand application of high power and has stable characteristics, and the present invention is of great benefit in practical use.
【図１】本発明の一実施例の縦断面図。FIG. 1 is a vertical sectional view of an embodiment of the present invention.
【図２】遮断周波数９ＧＨｚの低域フィルタＢの減衰特
性図。FIG. 2 is an attenuation characteristic diagram of a low-pass filter B having a cutoff frequency of 9 GHz.
【図３】従来の低域フィルタの縦断面図。FIG. 3 is a vertical cross-sectional view of a conventional low pass filter.
【図４】図３に示した従来の低域フィルタの長手方向各
部の寸法を示す図。FIG. 4 is a diagram showing the dimensions of each part in the longitudinal direction of the conventional low-pass filter shown in FIG.
【図５】遮断周波数３ＧＨｚの低域フィルタＡの減衰特
性図。FIG. 5 is an attenuation characteristic diagram of a low-pass filter A having a cutoff frequency of 3 GHz.
【図６】太径円柱部１１の端縁に於ける電界集中による
放電を示す概念図。FIG. 6 is a conceptual diagram showing discharge due to electric field concentration at the edge of the large-diameter cylindrical portion 11.
【符号の説明】 １ 同軸内導体１ ２ 同軸外導体２ ３ 円筒直管誘電体 ４ ５０Ω線路 １１ 太径円柱部 １２ 細径部 １３ 誘電体[Explanation of Codes] 1 inner coaxial conductor 1 2 outer coaxial conductor 2 3 cylindrical straight tube dielectric 4 50 Ω line 11 large diameter cylindrical portion 12 small diameter portion 13 dielectric
Claims (3)
ピーダンス線路が組み合わされた同軸内導体と、同軸外
導体と、該同軸内導体と該同軸外導体との間に延在して
挿入された円筒直管誘電体とからなり、該同軸外導体は
段差のない同一径の直管とし、該同軸内導体は互いに異
なる遮断周波数を有する２つの同軸低域フィルタ用同軸
内導体を５０Ω線路で直接に接続したものとし、該円筒
直管誘電体が窒化アルミニウムでなることを特徴とする
同軸形高電力低域フィルタ。1. A coaxial inner conductor, in which a low characteristic impedance line and a high characteristic impedance line are combined, a coaxial outer conductor, and a cylindrical straight line inserted to extend between the coaxial inner conductor and the coaxial outer conductor. The coaxial outer conductor is a straight pipe having the same diameter without a step, and the coaxial inner conductor is formed by directly connecting two coaxial low-pass filter coaxial inner conductors having different cutoff frequencies with a 50Ω line. A coaxial high-power low-pass filter, characterized in that the cylindrical straight tube dielectric is made of aluminum nitride.
と、遮断周波数ｆ2（ｆ1＜ｆ2）の同軸低域フィルタＢ
と、前記同軸低域フィルタＡ及びＢを直列に接続する５
０Ω同軸線路とでなり、 前記同軸低域フィルタＡ及びＢ並びに前記５０Ω同軸線
路は、該５０Ω同軸線路の両端を前記同軸低域フィルタ
Ａ及びＢの各端で挟んだ形に配置されているとともに、
１つの円筒形導体をそれぞれの外導体として共用してお
り、 前記円筒形導体の内壁に密着して該円筒形導体と同軸の
円筒形誘電体が設けられており、 前記同軸低域フィルタＡ及びＢの内導体は太径円柱部と
細径部とを軸方向に交互に配置してなることを特徴とす
る同軸形高電力用低域フィルタ。2. A coaxial low-pass filter A having a cutoff frequency f 1.
And a coaxial low-pass filter B with a cutoff frequency f 2 (f 1 <f 2 ).
And the coaxial low-pass filters A and B are connected in series 5
0Ω coaxial line, and the coaxial low-pass filters A and B and the 50Ω coaxial line are arranged such that both ends of the 50Ω coaxial line are sandwiched by the respective ends of the coaxial low-pass filters A and B. ,
One cylindrical conductor is shared as each outer conductor, and a cylindrical dielectric body coaxial with the cylindrical conductor is provided in close contact with the inner wall of the cylindrical conductor, and the coaxial low-pass filter A and The inner conductor of B is a coaxial high-power low-pass filter characterized in that a large-diameter cylindrical portion and a small-diameter portion are alternately arranged in the axial direction.
径円柱部および細径部の軸方向長さは前記同軸低域フィ
ルタＢにおける太径円柱部および細径部の軸方向長さよ
りそれぞれ長いことを特徴とする請求項２に記載の同軸
形高電力用低域フィルタ。3. The axial lengths of the large-diameter cylindrical portion and the small-diameter portion of the coaxial low-pass filter A are longer than the axial lengths of the large-diameter cylindrical portion and the small-diameter portion of the coaxial low-pass filter B, respectively. The coaxial low-pass filter for high power according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2765694A JPH07235803A (en) | 1994-02-25 | 1994-02-25 | Coaxial high power low pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2765694A JPH07235803A (en) | 1994-02-25 | 1994-02-25 | Coaxial high power low pass filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07235803A true JPH07235803A (en) | 1995-09-05 |
Family
ID=12226978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2765694A Pending JPH07235803A (en) | 1994-02-25 | 1994-02-25 | Coaxial high power low pass filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07235803A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000030205A1 (en) * | 1998-11-12 | 2000-05-25 | Mitsubishi Denki Kabushiki Kaisha | Low-pass filter |
| JP2006279462A (en) * | 2005-03-29 | 2006-10-12 | Hitachi Metals Ltd | Electric noise filter and electric noise removal method |
| JP2013518473A (en) * | 2010-01-22 | 2013-05-20 | ヌボトロニクス，エルエルシー | Thermal control |
| US9505613B2 (en) | 2011-06-05 | 2016-11-29 | Nuvotronics, Inc. | Devices and methods for solder flow control in three-dimensional microstructures |
| US9515364B1 (en) | 2006-12-30 | 2016-12-06 | Nuvotronics, Inc. | Three-dimensional microstructure having a first dielectric element and a second multi-layer metal element configured to define a non-solid volume |
| US9570789B2 (en) | 2007-03-20 | 2017-02-14 | Nuvotronics, Inc | Transition structure between a rectangular coaxial microstructure and a cylindrical coaxial cable using step changes in center conductors thereof |
| US9583856B2 (en) | 2011-06-06 | 2017-02-28 | Nuvotronics, Inc. | Batch fabricated microconnectors |
| US9608303B2 (en) | 2013-01-26 | 2017-03-28 | Nuvotronics, Inc. | Multi-layer digital elliptic filter and method |
| US9888600B2 (en) | 2013-03-15 | 2018-02-06 | Nuvotronics, Inc | Substrate-free interconnected electronic mechanical structural systems |
| US10002818B2 (en) | 2007-03-20 | 2018-06-19 | Nuvotronics, Inc. | Integrated electronic components and methods of formation thereof |
| US10074885B2 (en) | 2003-03-04 | 2018-09-11 | Nuvotronics, Inc | Coaxial waveguide microstructures having conductors formed by plural conductive layers |
| US10193203B2 (en) | 2013-03-15 | 2019-01-29 | Nuvotronics, Inc | Structures and methods for interconnects and associated alignment and assembly mechanisms for and between chips, components, and 3D systems |
| US10310009B2 (en) | 2014-01-17 | 2019-06-04 | Nuvotronics, Inc | Wafer scale test interface unit and contactors |
| US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
| US10497511B2 (en) | 2009-11-23 | 2019-12-03 | Cubic Corporation | Multilayer build processes and devices thereof |
| US10511073B2 (en) | 2014-12-03 | 2019-12-17 | Cubic Corporation | Systems and methods for manufacturing stacked circuits and transmission lines |
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|---|---|---|---|---|
| JPH04296405A (en) * | 1991-03-26 | 1992-10-20 | Sumitomo Electric Ind Ltd | Insulating member |
| JP4102303B2 (en) * | 2001-09-26 | 2008-06-18 | チュウ，ティシュ | Methods and compositions for treating or preventing bacterial infections |
-
1994
- 1994-02-25 JP JP2765694A patent/JPH07235803A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296405A (en) * | 1991-03-26 | 1992-10-20 | Sumitomo Electric Ind Ltd | Insulating member |
| JP4102303B2 (en) * | 2001-09-26 | 2008-06-18 | チュウ，ティシュ | Methods and compositions for treating or preventing bacterial infections |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255920B1 (en) | 1998-11-12 | 2001-07-03 | Mitsubishi Denki Kabushiki Kaisha | Low-pass filter |
| WO2000030205A1 (en) * | 1998-11-12 | 2000-05-25 | Mitsubishi Denki Kabushiki Kaisha | Low-pass filter |
| US10074885B2 (en) | 2003-03-04 | 2018-09-11 | Nuvotronics, Inc | Coaxial waveguide microstructures having conductors formed by plural conductive layers |
| JP2006279462A (en) * | 2005-03-29 | 2006-10-12 | Hitachi Metals Ltd | Electric noise filter and electric noise removal method |
| US9515364B1 (en) | 2006-12-30 | 2016-12-06 | Nuvotronics, Inc. | Three-dimensional microstructure having a first dielectric element and a second multi-layer metal element configured to define a non-solid volume |
| US10002818B2 (en) | 2007-03-20 | 2018-06-19 | Nuvotronics, Inc. | Integrated electronic components and methods of formation thereof |
| US9570789B2 (en) | 2007-03-20 | 2017-02-14 | Nuvotronics, Inc | Transition structure between a rectangular coaxial microstructure and a cylindrical coaxial cable using step changes in center conductors thereof |
| US10431521B2 (en) | 2007-03-20 | 2019-10-01 | Cubic Corporation | Integrated electronic components and methods of formation thereof |
| US10497511B2 (en) | 2009-11-23 | 2019-12-03 | Cubic Corporation | Multilayer build processes and devices thereof |
| JP2013518473A (en) * | 2010-01-22 | 2013-05-20 | ヌボトロニクス，エルエルシー | Thermal control |
| US9505613B2 (en) | 2011-06-05 | 2016-11-29 | Nuvotronics, Inc. | Devices and methods for solder flow control in three-dimensional microstructures |
| US9583856B2 (en) | 2011-06-06 | 2017-02-28 | Nuvotronics, Inc. | Batch fabricated microconnectors |
| US9608303B2 (en) | 2013-01-26 | 2017-03-28 | Nuvotronics, Inc. | Multi-layer digital elliptic filter and method |
| US9888600B2 (en) | 2013-03-15 | 2018-02-06 | Nuvotronics, Inc | Substrate-free interconnected electronic mechanical structural systems |
| US10193203B2 (en) | 2013-03-15 | 2019-01-29 | Nuvotronics, Inc | Structures and methods for interconnects and associated alignment and assembly mechanisms for and between chips, components, and 3D systems |
| US10257951B2 (en) | 2013-03-15 | 2019-04-09 | Nuvotronics, Inc | Substrate-free interconnected electronic mechanical structural systems |
| US10361471B2 (en) | 2013-03-15 | 2019-07-23 | Nuvotronics, Inc | Structures and methods for interconnects and associated alignment and assembly mechanisms for and between chips, components, and 3D systems |
| US10310009B2 (en) | 2014-01-17 | 2019-06-04 | Nuvotronics, Inc | Wafer scale test interface unit and contactors |
| US10511073B2 (en) | 2014-12-03 | 2019-12-17 | Cubic Corporation | Systems and methods for manufacturing stacked circuits and transmission lines |
| US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
| US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
| US10553511B2 (en) | 2017-12-01 | 2020-02-04 | Cubic Corporation | Integrated chip scale packages |
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