JPH0722365A - Cleaning method of semiconductor wafer - Google Patents
Cleaning method of semiconductor waferInfo
- Publication number
- JPH0722365A JPH0722365A JP16690293A JP16690293A JPH0722365A JP H0722365 A JPH0722365 A JP H0722365A JP 16690293 A JP16690293 A JP 16690293A JP 16690293 A JP16690293 A JP 16690293A JP H0722365 A JPH0722365 A JP H0722365A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- bare wafer
- bare
- oxide film
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置の製造工
程の前工程において加工された半導体ウエハ（この場合
はベアウエハである）の洗浄方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor wafer (bare wafer in this case) processed in a pre-process of a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】半導体装置の製造工程の前工程で得られ
たベアウエハは、それ程時間を経過することなく次工程
の処理装置に投入される場合には、それらのベアウエハ
の表面にたとえパーティクルが付着したとしても、通常
のメガソニック洗浄処理で、それらのパーティクルを９
０％以上除去することができる。2. Description of the Related Art Bare wafers obtained in the preceding process of a semiconductor device manufacturing process are thrown into the processing device of the next process without much time, and even if particles are attached to the surface of those bare wafers. Even if you do, the normal megasonic cleaning process will remove 9 of those particles.
It can be removed by 0% or more.
【０００３】しかし、前記ベアウエハの保管期間が長く
なるにつれ、それらの表面に付着したパーティクルの除
去率は低下する。またベアウエハを長期放置することに
よりそれらのベアウエハの表面にＳｉＯ2 の自然酸化膜
が成長することが認められている。これら両者の現象を
図３に示した。However, as the bare wafers are stored for a longer period of time, the removal rate of particles adhering to their surfaces decreases. Further, it has been recognized that a natural oxide film of SiO 2 grows on the surfaces of bare wafers when they are left for a long time. Both of these phenomena are shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】前記のように長期放置
されたベアウエハの表面に付着したパーティクルの除去
は、通常のメガソニック洗浄を行っても、その除去能力
はかなり劣ることが図３から判る。It can be seen from FIG. 3 that the particles adhering to the surface of the bare wafer that has been left for a long period of time as described above are considerably inferior in their removal ability even if ordinary megasonic cleaning is performed. .
【０００５】この原因は、図４に示したメカニズムによ
るものと思慮される。即ち、同図Ａのように、ベアウエ
ハが直ちに次工程の処理装置に投入される場合とか、放
置されない「放置なし」状態の場合、そのベアウエハ１
の表面２にはＳｉＯ2 の自然酸化膜が成長せず、その表
面２に付着したパーティクル３は単に付着しているだけ
であるので、通常のメガソニック洗浄処理を行うこと
で、そのパーティクル３を容易に除去することができ
る。The cause is considered to be due to the mechanism shown in FIG. That is, as shown in FIG. 3A, when the bare wafer is immediately put into the processing apparatus of the next process, or in the “without leaving” state where it is not left, the bare wafer 1
Since a natural oxide film of SiO 2 does not grow on the surface 2 of the above, and the particles 3 attached to the surface 2 are merely attached, the particles 3 are removed by performing a normal megasonic cleaning process. It can be easily removed.
【０００６】しかし、長期放置した場合、同図Ｂに示し
たように、ベアウエハ１の表面２に自然酸化膜４が成長
し、パーティクル３の周囲を取り囲み、そのパーティク
ル３をベアウエハ１の表面２に接着したような状態に留
める。このメカニズムのため、通常のメガソニック洗浄
処理を施しても、そのパーティクル３を容易に剥離する
ことができない原因になっている。このように、ベアウ
エハ１の表面２にパーティクル３が残留したまま、次工
程の処理装置に投入すると、欠陥ウエハになることは言
うまでもない。However, when left for a long period of time, as shown in FIG. 1B, a natural oxide film 4 grows on the surface 2 of the bare wafer 1 and surrounds the particles 3, and the particles 3 are deposited on the surface 2 of the bare wafer 1. Keep it glued. Due to this mechanism, even if the normal megasonic cleaning process is performed, the particles 3 cannot be easily separated. It goes without saying that if the particles 3 are left on the surface 2 of the bare wafer 1 as described above and are put into the processing apparatus of the next step, a defective wafer is obtained.
【０００７】[0007]
【課題を解決するための手段】それ故、この発明の半導
体ウエハの洗浄方法は、ベアウエハの表面を先ず軽くエ
ッチング（ライトエッチング「ＬＥ」、以下、この用語
を用いる。）し、その後、そのベアウエハの表面をメガ
ソニック洗浄により洗浄処理を行う方法をとって、前記
課題を解決した。Therefore, in the method for cleaning a semiconductor wafer according to the present invention, the surface of the bare wafer is first lightly etched (light etching "LE", hereinafter, this term will be used), and then the bare wafer. The above-mentioned problems were solved by adopting a method of performing a cleaning treatment on the surface of the above by megasonic cleaning.
【０００８】[0008]
【作用】従って、たとえ長期放置したベアウエハであっ
ても、即ち、その表面に自然酸化膜が成長していても、
その自然酸化膜を除去するので、その表面に付着したパ
ーティクルを簡単に、従って良好に洗浄し、清浄なベア
ウエハを得ることができる。Therefore, even if a bare wafer that has been left for a long period of time, that is, even if a natural oxide film grows on its surface,
Since the natural oxide film is removed, the particles attached to the surface can be easily and properly cleaned, and a clean bare wafer can be obtained.
【０００９】[0009]
【実施例】次に、この発明の半導体ウエハの洗浄方法の
実施例を図１を用いて説明する。図１はこの発明の半導
体ウエハの洗浄方法を説明するための工程図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of the semiconductor wafer cleaning method of the present invention will be described with reference to FIG. 1A to 1C are process diagrams for explaining a semiconductor wafer cleaning method of the present invention.
【００１０】図１において、工程１では、表面２にパー
ティクル３が付着し、自然酸化膜４が成長したベアウエ
ハ１を用意する。In FIG. 1, in step 1, a bare wafer 1 having particles 3 attached to a surface 2 and a natural oxide film 4 grown is prepared.
【００１１】次に、ライトエッチング液として、例え
ば、ＨＦ、ＨＣｌ及びＨ2 Ｏを１：１：２０の割合で希
釈した混合液を用意する。そして、このライトエッチン
グ液に工程１の長期放置したベアウエハ１を約１０秒
間、浸漬する。そうすると、工程２に示したように、パ
ーティクル３の周囲を取り囲んだ前記自然酸化膜４はも
とよりベアウエハ１の表面２に生成した自然酸化膜４が
除去される。前記ライトエッチング液としては、前記実
施例の他、例えば、ＨＦだけの希釈液であってもよく、
またＨＦとＮＨ4 Ｆとの混合液を用いてもよい。Next, as a light etching solution, for example, a mixed solution prepared by diluting HF, HCl and H 2 O in a ratio of 1: 1: 20 is prepared. Then, the bare wafer 1 left for a long period of time in step 1 is immersed in this light etching solution for about 10 seconds. Then, as shown in step 2, not only the natural oxide film 4 surrounding the particles 3 but also the natural oxide film 4 formed on the surface 2 of the bare wafer 1 is removed. The light etching liquid may be, for example, a diluting liquid containing only HF, in addition to the above-mentioned embodiment,
Alternatively, a mixed solution of HF and NH 4 F may be used.
【００１２】次に、メガソニック洗浄液として、例え
ば、ＮＨ4 ＯＨとＨ2 Ｏ2 との希釈液を用意し、これに
工程２で得たベアウエハ１を浸漬した状態でメガソニッ
クを掛け、メガソニック洗浄を行うと、工程３に示した
ように、ベアウエハ１の表面２に付着しているパーティ
クル３に振動が加わり、例えば、約１０分で、工程４に
示したように、パーティクル３がベアウエハ１の表面２
から剥離し、容易に除去することができる。Next, as a megasonic cleaning liquid, for example, a diluted liquid of NH 4 OH and H 2 O 2 is prepared, and the bare wafer 1 obtained in the step 2 is immersed in the diluted liquid, and then the megasonic is applied. When cleaning is performed, as shown in step 3, the particles 3 attached to the surface 2 of the bare wafer 1 are vibrated, and for example, in about 10 minutes, as shown in step 4, the particles 3 are removed from the bare wafer 1. Surface 2
It can be peeled off and easily removed.
【００１３】この発明の、前記のような半導体ウエハの
洗浄方法を採ると、図２Ａに示したような、ベアウエハ
１の表面２に付着した多数のパーティクル３も、図２Ｃ
に示したように、ベアウエハ１の表面２に付着したパー
ティクル３が、どのような大きさの粒径であっても、図
２Ｂに示したメガソニック洗浄のみの洗浄方法に比較し
て、格別大幅に除去されているこが理解されよう。When the semiconductor wafer cleaning method as described above according to the present invention is adopted, a large number of particles 3 attached to the surface 2 of the bare wafer 1 as shown in FIG.
As shown in FIG. 2, no matter how large the particle size of the particles 3 attached to the surface 2 of the bare wafer 1 is, compared to the cleaning method using only megasonic cleaning shown in FIG. You can see that it has been removed.
【００１４】[0014]
【発明の効果】以上の説明から明らかなように、この発
明の半導体ウエハの洗浄方法は、たとえ長期放置したベ
アウエハであっても、即ち、その表面に自然酸化膜が成
長していても、その自然酸化膜を容易に除去できるの
で、その表面に付着したパーティクルを簡単に、従って
容易に洗浄でき、清浄なベアウエハを得ることができ
る。そして、歩留り向上に寄与できるなどという優れた
特徴がある。As is apparent from the above description, the method for cleaning a semiconductor wafer according to the present invention can be applied to a bare wafer that has been left for a long period of time, that is, even if a natural oxide film grows on the surface of the bare wafer. Since the natural oxide film can be easily removed, the particles attached to the surface can be easily and therefore easily cleaned, and a clean bare wafer can be obtained. And, it has an excellent feature that it can contribute to the improvement of the yield.
【図１】 この発明の半導体ウエハの洗浄方法を説明す
るための工程図である。FIG. 1 is a process chart for explaining a semiconductor wafer cleaning method of the present invention.
【図２】 この発明の半導体ウエハの洗浄方法の効果を
従来技術のそれと比較して表した図である。FIG. 2 is a diagram showing the effect of the semiconductor wafer cleaning method of the present invention in comparison with that of the prior art.
【図３】 ベアウエハの放置期間に対するパーティクル
の除去率と自然酸化膜の厚さの関係を示す関係図であ
る。FIG. 3 is a relationship diagram showing a relationship between a removal rate of particles and a thickness of a natural oxide film with respect to a bare wafer leaving period.
【図４】 従来技術の半導体ウエハの洗浄方法を説明す
るための工程図であって、同図Ａはベアウエハを放置し
ない場合の工程図、同図Ｂはベアウエハを長期放置した
場合の工程図である。4A and 4B are process diagrams for explaining a conventional semiconductor wafer cleaning method, wherein FIG. 4A is a process diagram when the bare wafer is not left, and FIG. 4B is a process diagram when the bare wafer is left for a long time. is there.
１ 半導体ウエハ（ベアウエハ） ２ ベアウエハの表面 ３ パーティクル ４ 自然酸化膜 1 semiconductor wafer (bare wafer) 2 surface of bare wafer 3 particles 4 natural oxide film
Claims (1)
た後、次工程の処理装置に投入するに当たって、前記半
導体ウエハの表面を先ず軽くエッチングし、その後、そ
の半導体ウエハの表面をメガソニック洗浄により洗浄処
理を行うことを特徴とする半導体ウエハの洗浄方法。1. The semiconductor wafer obtained in the previous step is left for a long period of time, and then is put into a processing apparatus in the next step, the surface of the semiconductor wafer is first lightly etched, and then the surface of the semiconductor wafer is subjected to megasonic cleaning. A method of cleaning a semiconductor wafer, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16690293A JPH0722365A (en) | 1993-07-06 | 1993-07-06 | Cleaning method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16690293A JPH0722365A (en) | 1993-07-06 | 1993-07-06 | Cleaning method of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0722365A true JPH0722365A (en) | 1995-01-24 |
Family
ID=15839757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16690293A Pending JPH0722365A (en) | 1993-07-06 | 1993-07-06 | Cleaning method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722365A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018056038A1 (en) * | 2016-09-26 | 2018-03-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate cleaning method, method for creating substrate cleaning recipe, and device for creating substrate cleaning recipe |
-
1993
- 1993-07-06 JP JP16690293A patent/JPH0722365A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018056038A1 (en) * | 2016-09-26 | 2018-03-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate cleaning method, method for creating substrate cleaning recipe, and device for creating substrate cleaning recipe |
| JP2018056184A (en) * | 2016-09-26 | 2018-04-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate cleaning method, substrate cleaning recipe creation method, and substrate cleaning recipe creation device |
| TWI648792B (en) * | 2016-09-26 | 2019-01-21 | 日商斯庫林集團股份有限公司 | Method for preparing substrate cleaning formula, device for preparing substrate cleaning formula, and computer program product |
| CN109661718A (en) * | 2016-09-26 | 2019-04-19 | 株式会社斯库林集团 | Substrate-cleaning method, base-plate cleaning regulation creating method and base-plate cleaning regulation implementing device |
| US10840083B2 (en) | 2016-09-26 | 2020-11-17 | SCREEN Holdings Co., Ltd. | Substrate cleaning method, method for creating substrate cleaning recipe, and device for creating substrate cleaning recipe |
| CN109661718B (en) * | 2016-09-26 | 2023-05-05 | 株式会社斯库林集团 | Substrate cleaning method, substrate cleaning protocol creating method, and substrate cleaning protocol creating apparatus |
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