JP3158407B2 - Semiconductor substrate cleaning method - Google Patents
Semiconductor substrate cleaning methodInfo
- Publication number
- JP3158407B2 JP3158407B2 JP00773190A JP773190A JP3158407B2 JP 3158407 B2 JP3158407 B2 JP 3158407B2 JP 00773190 A JP00773190 A JP 00773190A JP 773190 A JP773190 A JP 773190A JP 3158407 B2 JP3158407 B2 JP 3158407B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- particles
- semiconductor substrate
- hydrogen peroxide
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体基板の洗浄方法に関する。本発明
は、例えば、半導体装置製造の際の半導体基板、例えば
シリコン基板の洗浄等に利用することができる。The present invention relates to a method for cleaning a semiconductor substrate. INDUSTRIAL APPLICABILITY The present invention can be used, for example, for cleaning a semiconductor substrate, for example, a silicon substrate when manufacturing a semiconductor device.
本発明は、弗酸溶液による洗浄工程と、アンモニア水
と過酸化水素水とを含む液による洗浄工程とを少なくと
も有する半導体基板の洗浄方法において、弗酸溶液によ
る洗浄工程を、アンモニア水と過酸化水素水とを含む液
による洗浄工程に先立って行うようにすることによっ
て、パーティクル付着の少ない半導体基板洗浄を達成し
たものである。The present invention provides a method for cleaning a semiconductor substrate, comprising at least a cleaning step using a hydrofluoric acid solution and a cleaning step using a solution containing aqueous ammonia and hydrogen peroxide. By performing prior to the cleaning step using a liquid containing hydrogen water, cleaning of the semiconductor substrate with less adhesion of particles is achieved.
従来より半導体基板、特にシリコン基板の洗浄には、
一般にRCA洗浄と呼ばれる洗浄プロセスが多用されてい
る。Conventionally, for cleaning semiconductor substrates, especially silicon substrates,
Generally, a cleaning process called RCA cleaning is frequently used.
この洗浄プロセスは、第２図に示すように、次のよう
な工程を経るものである。This cleaning process includes the following steps as shown in FIG.
（Ｉ）アンモニア水と過酸化水素水とを含む液による洗
浄（以下この洗浄を洗浄工程Ｃ〔NH3〕と称する）。通
常、アンモニア水と過酸化水素水と水とを、適宜の割合
で混合した液を用いて、この洗浄工程Ｃ〔NH3〕を行
う。(I) Washing with a solution containing aqueous ammonia and aqueous hydrogen peroxide (hereinafter, this washing is referred to as washing step C [NH 3 ]). Usually, this washing step C [NH 3 ] is carried out using a liquid obtained by mixing aqueous ammonia, aqueous hydrogen peroxide and water at an appropriate ratio.
（II）リンス工程R1を行う。通常純水により、リンスす
る。(II) Perform a rinsing step R1. Rinse with pure water.
（III）弗酸溶液による洗浄（以下この洗浄を洗浄工程
Ｃ〔HF〕と称する）。通常、市販の弗化水素酸を適宜に
希釈して用いる。(III) Cleaning with hydrofluoric acid solution (this cleaning is hereinafter referred to as cleaning step C [HF]). Usually, commercially available hydrofluoric acid is appropriately diluted and used.
（IV）リンス工程R2を行う。通常純粋によりリンスす
る。(IV) Perform a rinsing step R2. Usually rinsed more purely.
（Ｖ）塩酸と過酸化水素水とを含む液による洗浄（以下
この洗浄を洗浄工程Ｃ〔HCl〕と称する）。通常、市販
の塩酸と過酸化水素水と水とを適宜に混合して使用す
る。(V) Washing with a solution containing hydrochloric acid and aqueous hydrogen peroxide (hereinafter, this washing is referred to as washing step C [HCl]). Usually, commercially available hydrochloric acid, hydrogen peroxide solution and water are appropriately mixed and used.
（VI）リンス工程R3を行う。通常、純水によりリンスす
る。(VI) Rinse step R3 is performed. Usually, it is rinsed with pure water.
（VII）乾燥工程Ｄを行う。(VII) Drying step D is performed.
半導体基板の洗浄は種々の場合に行われ、例えばpre
−oxidationと称される当初の段階でのシリコン基板の
酸化の前や、あるいはゲート酸化膜形成用の酸化の前
や、あるいは犠牲酸化と称される、窒化膜から発生する
NH3により下地シリコンが窒化されることを防ぐ酸化膜
の形成の前などに行われ、その他各種の局面で行われる
が、いずれも一般に、上記RCA洗浄が多く用いられてい
る。（RCA洗浄については、RCA Review,June 1970,187
〜等参照）。Cleaning of the semiconductor substrate is performed in various cases, for example, pre-
Occurs before the oxidation of the silicon substrate at the initial stage, called oxidation-or before the oxidation to form the gate oxide, or from the nitride film, called sacrificial oxidation
It is performed before the formation of an oxide film for preventing the underlying silicon from being nitrided by NH 3, and is performed in various other aspects. In general, the RCA cleaning is often used. (For RCA cleaning, see RCA Review, June 1970,187
And so on).
しかしこの従来法では、被洗浄部材である半導体基板
による持ち込みパーティクルが多い場合、大量のパーテ
ィクルが基板に付着することがある。例えば、裏面サン
ドブラスト仕上げの半導体ウエハを上記従来プロセスで
洗浄処理した場合、第４図（ａ）（ｂ）に示すように、
数1000個に及ぶ大量のパーティクルが付着する。However, according to this conventional method, when a large number of particles are brought in by the semiconductor substrate as the member to be cleaned, a large amount of particles may adhere to the substrate. For example, when a backside sandblasted semiconductor wafer is cleaned by the above-described conventional process, as shown in FIGS. 4 (a) and 4 (b),
A large amount of thousands of particles adhere.
第４図（ａ）（ｂ）は、６インチのシリコンウエハに
ついて、pre−oxidationして表面酸化膜を形成する直前
の基板洗浄の場合を示すものであり、第４図（ａ）は洗
浄直後の0.14μｍ以上のパーティクルを検出して点で示
したもの、第４図（ｂ）は同じく0.28μｍ以上のパーテ
ィクルを検出して点で示したものである。検知装置は、
レーザ光を照射して散乱光によりパーティクルの存在を
検知するパーティクルカウターである日立製作所製HLD
型表面欠陥検査装置を用いた。従来法による洗浄では、
0.28μｍ以上のパーティクルを検知した第４図（ｂ）の
場合についても、3214個のパーティクルが検出された。FIGS. 4 (a) and 4 (b) show a case of cleaning a substrate immediately before forming a surface oxide film by pre-oxidation on a 6-inch silicon wafer, and FIG. FIG. 4 (b) shows the detection of particles having a size of 0.14 μm or more as indicated by dots, and FIG. 4B shows the detection of particles having a size of 0.28 μm or more. The detection device is
HLD made by Hitachi, Ltd. is a particle counter that irradiates laser light and detects the presence of particles by scattered light
A mold surface defect inspection device was used. In conventional cleaning,
In the case of FIG. 4B in which particles of 0.28 μm or more were detected, 3214 particles were detected.
本発明は上記従来技術の問題点を解決して、パーティ
クルの付着を低減した半導体基板洗浄方法を提供せんと
するものである。An object of the present invention is to provide a method for cleaning a semiconductor substrate, which solves the above-mentioned problems of the prior art and reduces adhesion of particles.
上記本発明の目的を達成するため、本発明では、弗酸
溶液による洗浄工程と、アンモニア水と過酸化水素水と
を含む液による洗浄工程とを少なくとも有する半導体基
板の洗浄方法において、上記弗酸溶液による洗浄工程
を、アンモニア水と過酸化水素水とを含む液による洗浄
工程に先立って行い、その後塩酸と過酸化水素水とを含
む液による洗浄工程を行う構成にする。In order to achieve the object of the present invention, the present invention provides a method for cleaning a semiconductor substrate, comprising at least a cleaning step using a hydrofluoric acid solution and a cleaning step using a solution containing aqueous ammonia and hydrogen peroxide. The cleaning step using a solution is performed prior to the cleaning step using a liquid containing aqueous ammonia and hydrogen peroxide, and then the cleaning step using a liquid containing hydrochloric acid and aqueous hydrogen peroxide is performed.
本発明の作用は明らかでないが、上記本発明の構成を
採用することにより、パーティクル付着が格段に減少し
た洗浄を実現できた。Although the function of the present invention is not clear, by employing the above-described structure of the present invention, cleaning with markedly reduced particle adhesion can be realized.
以下本発明の実施例について説明する。なお当然のこ
とではあるが、本発明は以下に述べる実施例により限定
されものではない。Hereinafter, embodiments of the present invention will be described. Needless to say, the present invention is not limited to the embodiments described below.
実施例−１ この実施例は、本発明を、シリコン半導体基板の洗浄
に利用したものである。特に６インチシリコンウエハ
を、その表面をpre−oxidationするに先立って洗浄する
場合に、本発明を適用した。Example 1 In this example, the present invention is used for cleaning a silicon semiconductor substrate. In particular, the present invention is applied to a case where a 6-inch silicon wafer is cleaned prior to pre-oxidation of its surface.
本実施例では、第１図に示す工程で洗浄を行った。 In the present embodiment, cleaning was performed in the step shown in FIG.
即ち、この洗浄方法は、弗酸溶液による洗浄工程Ｃ
〔HF〕と、アンモニア水と過酸化水素水とを含む液によ
る洗浄工程Ｃ〔NH3〕とを有するが、上記弗酸溶液によ
る洗浄工程Ｃ〔HF〕を、アンモニア水と過酸化水素水を
含む液による洗浄工程Ｃ〔NH3〕に先立って行った。具
体的には第（Ｉ）工程で洗浄工程Ｃ〔HF〕を行い、第
（II）工程のリンス工程R1を介して、第（III）工程で
上記洗浄工程Ｃ〔NH3〕を行った。That is, this cleaning method includes a cleaning step C using a hydrofluoric acid solution.
[HF] and a washing step C [NH 3 ] using a solution containing aqueous ammonia and hydrogen peroxide. The washing step C [HF] using the above-mentioned hydrofluoric acid solution is carried out using ammonia water and aqueous hydrogen peroxide. This step was performed prior to the washing step C [NH 3 ] using the containing solution. Specifically, the cleaning step C [HF] was performed in the (I) step, and the above-mentioned cleaning step C [NH 3 ] was performed in the (III) step via the rinsing step R1 in the (II) step.
そのほか具体的には第（IV）工程でリンス工程R2を行
い、その後第（Ｖ）工程で塩酸と過酸化水素水と水とを
含む溶液による洗浄工程Ｃ〔HCl〕を行い、第（VI）工
程のリンス工程R3を経て乾燥工程Ｄを行った。More specifically, a rinsing step R2 is performed in the (IV) step, and a washing step C [HCl] using a solution containing hydrochloric acid, hydrogen peroxide and water is performed in the (V) step, and the (VI) The drying step D was performed after the rinsing step R3 of the step.
各々の工程の内容は、従来のRCA洗浄プロセスと同様
にした。The content of each step was the same as the conventional RCA cleaning process.
本実施例において、第（Ｉ）工程の洗浄工程Ｃ〔HF〕
は５分程度行い、爾後の第（II）〜（VII）工程は、各
工程を10分程度で行った。In this embodiment, the cleaning step C [HF] of the (I) step
Was performed for about 5 minutes, and the subsequent steps (II) to (VII) were performed in about 10 minutes.
なお第（Ｖ）工程の洗浄工程Ｃ〔HCl〕は、60℃程度
で行った。その他は室温程度の液を用いた。The washing step C [HCl] of the (V) step was performed at about 60 ° C. Others used a liquid at about room temperature.
上記本実施例の洗浄プロセスにより、裏面サンドプラ
スト仕上げしたシリコンウエハを洗浄処理したところ、
第３図（ａ）（ｂ）に示す程度のパーティクル付着しか
みられなかった。By the cleaning process of the present embodiment, when the silicon wafer subjected to the back sandblast finishing is subjected to cleaning processing,
Only particles adhered to the extent shown in FIGS. 3 (a) and 3 (b) were observed.
即ち、前記第４図を用いて説明した従来法による場合
と全く同じ条件でパーティクル探知を行ったところ、0.
14μｍ以上のパーティクルは第３図（ａ）に示す程度、
0.28μｍ以上のパーティクルは第３図（ｂ）に示す程度
（ここでのカウントは202個）であって、パーティクル
付着数は激減した。例えば第３図（ｂ）の0.28μｍ以上
のパーティクルについては、５回試験を行って、最低で
83個、最高でも335個のパーティクルしか検出されず、
その間のデータとしては、103個、187個、202個という
ものであった。That is, when particle detection was performed under exactly the same conditions as in the case of the conventional method described with reference to FIG.
Particles of 14 μm or more have the degree shown in FIG.
Particles having a particle size of 0.28 μm or more had the degree shown in FIG. 3 (b) (the count here was 202), and the number of adhered particles was sharply reduced. For example, for particles of 0.28 μm or more in FIG.
Only 83, at most 335 particles are detected,
The data during that period were 103, 187, and 202.
なお、本実施例において、いずれかの工程で超音波を
かけて洗浄を行ってもよい。In this embodiment, cleaning may be performed by applying ultrasonic waves in any of the steps.
上述のように本実施例によれば、従来のRCA洗浄プロ
セスに比較して何らの工程の増加を必要とせずに、しか
もパーティクル付着数を格段に低減できる。As described above, according to the present embodiment, the number of adhered particles can be significantly reduced without requiring any additional steps as compared with the conventional RCA cleaning process.
実施例−２ 本実施例では、シリコンウエハについて、pre−oxida
tion前の洗浄工程（工程Ａ）と、ゲート酸化膜形成のた
めの酸化の前の洗浄工程（工程Ｂ）とを、それぞれ前記
実施例−１と同じく第１図に示す洗浄プロセスで行っ
た。Example 2 In this example, pre-oxida
A cleaning step (Step A) before the tion and a cleaning step (Step B) before the oxidation for forming the gate oxide film were performed by the cleaning process shown in FIG.
第５図は、各洗浄工程A,Bについて本実施例で行った
場合のパーティクル数を△で示し、従来プロセスで行っ
た場合のパーティクル数を○で示したものである。パー
ティクルは、いずれも0.28μｍ以上のものをカウントし
た。FIG. 5 shows the number of particles when the cleaning steps A and B were performed in the present embodiment in the present embodiment, and the number of particles when the cleaning steps A and B were performed in the conventional process was indicated by a circle. Particles counted 0.28 μm or more in each case.
第５図から理解されるように、pre−oxidation前の洗
浄工程Ａについても、またゲート酸化前の洗浄工程Ｂに
ついても、いずれも本発明の実施例による洗浄がすぐれ
ることがわかる。As can be understood from FIG. 5, the cleaning according to the embodiment of the present invention is excellent both in the cleaning step A before the pre-oxidation and in the cleaning step B before the gate oxidation.
上述の如く本発明の半導体基板洗浄方法によれば、従
来技術より工程数を増やす必要なく、パーティクルの付
着を低減させることができた。As described above, according to the semiconductor substrate cleaning method of the present invention, it is possible to reduce the adhesion of particles without increasing the number of steps as compared with the conventional technique.
第１図は、本発明の実施例の工程を示す図、第２図は、
従来例の工程を示す図である。第３図は、実施例の方法
により洗浄した基板のパーティクル検知、第４図は、従
来例の方法により洗浄した基板のパーティクル検知を示
す図である。第５図は、実施例と比較例（従来例）の各
洗浄方法におけるパーティクル数の比較を示す図であ
る。 Ｃ〔HF〕……弗酸溶液による洗浄工程。 Ｃ〔NH3〕……アンモニア水と過酸化水素水とを含む液
による洗浄工程。FIG. 1 is a view showing a process of an embodiment of the present invention, and FIG.
It is a figure showing the process of the conventional example. FIG. 3 is a diagram showing particle detection of a substrate cleaned by the method of the embodiment, and FIG. 4 is a diagram showing particle detection of a substrate cleaned by the conventional method. FIG. 5 is a diagram showing a comparison of the number of particles in each cleaning method of the embodiment and the comparative example (conventional example). C [HF]: Cleaning step using a hydrofluoric acid solution. C [NH 3 ]: washing step using a solution containing aqueous ammonia and aqueous hydrogen peroxide.
Claims (1)
と過酸化水素水とを含む液による洗浄工程とを少なくと
も有する半導体基板の洗浄方法において、 上記弗酸溶液による洗浄工程を、アンモニア水と過酸化
水素水とを含む液による洗浄工程に先立って行い、 その後塩酸と過酸化水素水とを含む液による洗浄工程を
行うことを特徴とする半導体基板の洗浄方法。1. A method for cleaning a semiconductor substrate, comprising at least a cleaning step using a hydrofluoric acid solution and a cleaning step using a liquid containing aqueous ammonia and hydrogen peroxide, wherein the cleaning step using a hydrofluoric acid solution is performed using ammonia water. A method for cleaning a semiconductor substrate, comprising: performing a cleaning step using a solution containing hydrochloric acid and a hydrogen peroxide solution prior to a cleaning process using a solution containing a hydrogen peroxide solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00773190A JP3158407B2 (en) | 1990-01-17 | 1990-01-17 | Semiconductor substrate cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00773190A JP3158407B2 (en) | 1990-01-17 | 1990-01-17 | Semiconductor substrate cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03211831A JPH03211831A (en) | 1991-09-17 |
| JP3158407B2 true JP3158407B2 (en) | 2001-04-23 |
Family
ID=11673856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00773190A Ceased JP3158407B2 (en) | 1990-01-17 | 1990-01-17 | Semiconductor substrate cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3158407B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006819A (en) | 2002-04-26 | 2004-01-08 | Nec Electronics Corp | Method for manufacturing semiconductor device |
| JP5168966B2 (en) * | 2007-03-20 | 2013-03-27 | 富士通セミコンダクター株式会社 | Polishing method and polishing apparatus |
-
1990
- 1990-01-17 JP JP00773190A patent/JP3158407B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03211831A (en) | 1991-09-17 |
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